CN104009129A - LED element manufacturing method, wafer base material for manufacturing and manufacturing device - Google Patents
LED element manufacturing method, wafer base material for manufacturing and manufacturing device Download PDFInfo
- Publication number
- CN104009129A CN104009129A CN201410051823.7A CN201410051823A CN104009129A CN 104009129 A CN104009129 A CN 104009129A CN 201410051823 A CN201410051823 A CN 201410051823A CN 104009129 A CN104009129 A CN 104009129A
- Authority
- CN
- China
- Prior art keywords
- led
- wafer
- led element
- scribe line
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Abstract
The application refers to an LED element manufacturing method, a wafer base material for manufacturing and a manufacturing device, and provides an LED element manufacturing method which can obtain LED elements with excellent luminous efficiency in an easier and more reliable way, and a device for manufacturing the LED elements. In the LED element manufacturing method, wafers are divided in a dividing preserved area in a grid shape to implement realize uniwafer so as to manufacture LED elements. A main surface of a wafer is provided with LED images to respectively form unit images of a single LED element through two-dimensional repeat. The LED element manufacturing method includes an engraving step of performing laser engraving along the dividing preserved area of the wafer before forming LED images to form engraving lines; an LED image forming step of forming an LED image on the main surface of the wafer after the engraving step; and a uniwafer step of implementing uniwafer by breakig the wafer engraving lines in the LED image forming step to obtain a plurality of LED elements.
Description
Technical field
The present invention relates to a kind of LED (Light Emitting Diode, light-emitting diode) manufacture method of element, and relate to and a kind ofly cut apart the manufacture method of the LED element that obtains LED element and the device for this LED manufacturing method by what the unit cell pattern of two-dimentional repeated configuration LED element on substrate was formed with pattern substrate.
Background technology
LED element is according to following processing procedure manufacture substantially,, for example be set to lattice-shaped be called Cutting Road (street) cut apart presumptive area segmentation band pattern substrate (band LED pattern substrate), implement singualtion (chip), this band pattern substrate (band LED pattern substrate) is to become to comprise that in the upper Two-dimensional Gravity And complex of the substrates such as sapphire single-crystal (wafer, mother substrate) unit cell pattern of the LED element of III nitride semiconductor layer or the metal electrodes etc. such as GaN forms.Here, so-called Cutting Road refers to by being split to form the region in a narrow margin as gap portion for two parts of LED element.
Band pattern substrate is to make in the following way,, on wafer, lamination all comprises after resilient coating, N-shaped conductive layer (also referred to as N-shaped coating, N-shaped contact layer etc.), luminescent layer, p-type electric-conducting layer (also referred to as p-type coating, p-type contact layer etc.) of III group-III nitride etc., on p-type electric-conducting layer, form p electrode, and N-shaped conductive layer is exposed, expose face and form n electrode (for example with reference to patent documentation 1 to patent documentation 3) at this.
And, as the method for cutting apart, following method is well-known,, under the condition distributing discretely along processing preset lines by the irradiated area at each unit pulse light, irradiating as pulse duration is the laser beam of the ultrashort pulse light of picosecond (psec) level, and the starting point (for example, with reference to patent documentation 4) that is formed for cutting apart along processing preset lines (being generally Cutting Road center).In the method disclosing at patent documentation 4, between the cutter trade forming in the irradiated area of washing off at each simple venation, produce splitting or break the Crack Extension (slight crack expansion) causing, along this crack segmentation (fracture) substrate, thus, realize singualtion.
And, following form is also well-known, that is, and and for making the light acquisition improved efficiency of LED element, and implement after concavo-convex processing in the front of the wafer to before forming III nitride semiconductor layer, form LED element pattern (for example, with reference to patent documentation 2 and patent documentation 3).In patent documentation 2, disclose use PSS (Patterned Sapphire Substrate, patterning sapphire substrate) form, this PSS is by carrying out lithographic process and RIE (Reactive Ion Etching, reactive ion etching), form and form the regular pattern that protuberance is circular cone shape in the front of sapphire wafer.In patent documentation 3, disclose following form,, by utilizing evaporation that the metal microparticle such as Ni or Pd is attached to behind the front of sapphire wafer discretely, carry out ICP-RIE (inductively coupled plasma type reactive ion etching: Inductive Coupled Plasma Reactive Ion Etching), and form random triangle projection in the front of wafer.
[background technology document]
[patent documentation]
[patent documentation 1] Japanese patent laid-open 10-200215 communique
[patent documentation 2] Japanese Patent Laid-Open 2012-64811 communique
[patent documentation 3] Japanese Patent Laid-Open 2010-225787 communique
[patent documentation 4] Japanese Patent Laid-Open 2011-131256 communique
Summary of the invention
[inventing problem to be solved]
In the method disclosing in patent documentation 4, singualtion is that the band pattern substrate to be formed with the unit cell pattern that forms LED element on wafer is object enforcement.Crack Extension when ideal situation is singualtion vertically produces with respect to real estate, if but flow process in the past, there is following situation: in the time cutting apart, the medium dip of III nitride semiconductor layer produce and break, the III nitride semiconductor layer of the element component part beyond Cutting Road is damaged.This destruction is reduced the luminous efficiency that causes LED element.
And, because of the LED element difference as making object, chip size, form (material, thickness etc.), Cutting Road width etc. with the layer of pattern substrate and vary, and, must in each layer, cut apart well, therefore, exist processing restriction larger, the problem that is difficult to carry out setting of processing conditions and so on.
In addition, the method disclosing in patent documentation 4 is normally carried out taking the one side contrary with forming surface unit cell pattern wafer as the plane of illumination of laser beam, but also exist when in the time that this plane of illumination is arranging ODR (omnidirectional reflection device: Omni-Directional Reflector) or DBR (distributed Bragg reflector: Distributed Bragg Reflector) with metallic film, be difficult to carry out the good problem of cutting apart and so on.
The present invention completes in view of described problem, and its object is to provide a kind of manufacture method of LED element, the LED element that can more really and easily obtain luminous efficiency excellence compared with the past.
[technological means of dealing with problems]
For solving described problem, the invention of technical scheme 1 is the manufacture method of one one kinds of LED elements, it is characterized in that: by be set to lattice-shaped cut apart presumptive area cut apart wafer implement singualtion manufacture LED element, this wafer is Two-dimensional Gravity And complex to be set on an interarea become to form respectively the LED pattern that the unit cell pattern of a LED element forms, and the manufacture method of this LED element comprises: delineation step, carry out laser grooving and scribing along cutting apart presumptive area described in the described LED pattern of formation wafer substrate before, form scribe line; LED pattern forms step, at the described interarea of the described wafer substrate after described delineation step, forms LED pattern, obtains described wafer; And singualtion step, make the described wafer that utilizes described LED pattern to form step acquisition by rupturing and singualtion along described scribe line, obtain multiple LED elements.
The invention of technical scheme 2 is according to the manufacture method of the LED element described in technical scheme 1, it is characterized in that: also comprise the described interarea that forms the described wafer substrate after described scribe line in described delineation step is carried out to etched etching step, and form in step at described LED pattern, in described etching step, on etched described interarea, form described LED pattern.
The invention of technical scheme 3 is according to the manufacture method of the LED element described in technical scheme 1, it is characterized in that: also comprise the described interarea that forms the described wafer substrate after described scribe line in described delineation step is carried out to etching, form the etching step of male and fomale(M&F), and form in step at described LED pattern, on the described interarea that is formed with described male and fomale(M&F), form described LED pattern.
The invention of technical scheme 4 is according to the manufacture method of the LED element described in any one in technical scheme 1 to 3, it is characterized in that: in described delineation step, be that the pulsed laser beam of picosecond level is for described laser grooving and scribing by pulse duration.
The invention of technical scheme 5 is according to the manufacture method of the LED element described in technical scheme 4, it is characterized in that: in described delineation step, discrete by the irradiated area that each simple venation of described pulsed laser beam is washed off, and form the row of described scribe line as many cutter trades of mutual isolation.
The invention of technical scheme 6 is according to the manufacture method of the LED element described in any one in technical scheme 1 to 3, it is characterized in that: in described delineation step, the pulsed laser beam that is nanosecond by pulse duration is for described laser grooving and scribing.
The invention of technical scheme 7 is according to the manufacture method of the LED element described in technical scheme 6, it is characterized in that: in described delineation step, form continuously described scribe line.
The invention of technical scheme 8 is according to the manufacture method of the LED element described in technical scheme 2 or 3, it is characterized in that: in described delineation step, the pulsed laser beam that is nanosecond by pulse duration is for described laser grooving and scribing, and in described etching step, the described interarea of described wafer substrate is carried out to etching, and the upgrading region forming along described scribe line is removed.
The invention of technical scheme 9 is according to the manufacture method of the LED element described in any one in technical scheme 1 to 8, it is characterized in that: form in step at described LED pattern, by heating described wafer substrate, and make in described wafer substrate to produce stress, make the Crack Extension from described scribe line.
The invention of technical scheme 10 is according to the manufacture method of the LED element described in any one in technical scheme 1 to 9, it is characterized in that: be also included in the described interarea that forms described LED pattern described wafer substrate before, the alignment mark that forms alignment mark forms step, and in described delineation step, along utilize described alignment mark form step form described wafer substrate after described alignment mark described in cut apart presumptive area, carry out described laser grooving and scribing.
The invention of technical scheme 11 is a kind of LED element manufacture wafer substrates, it is characterized in that: Two-dimensional Gravity And complex is set on an interarea and becomes to form respectively after the LED pattern that the unit cell pattern of a LED element forms, by cutting apart in the presumptive area of cutting apart that is set to lattice-shaped, and manufacture LED element, and the described interarea of described wafer substrate is male and fomale(M&F), and comprise at described interarea: alignment mark, the location while cutting apart for cutting apart presumptive area described in edge; And scribe line, described in edge, cut apart presumptive area setting by carrying out laser grooving and scribing.
The invention of technical scheme 12 is manufacturing installations of a kind of LED element, it is characterized in that: be used for by be set to lattice-shaped cut apart presumptive area cut apart wafer implement singualtion manufacture LED element, this wafer is Two-dimensional Gravity And complex to be set on an interarea become to form respectively the LED pattern that the unit cell pattern of a LED element forms, and the manufacturing installation of this LED element comprises: delineation device, carry out laser grooving and scribing along cutting apart presumptive area described in the described LED pattern of formation wafer substrate before, form scribe line; LED pattern forms device, utilizing described delineation device to form the described interarea of the described wafer substrate after scribe line, forms LED pattern, obtains described wafer; And singualtion device, make to utilize described LED pattern to form described wafer that device obtains by along described scribe line fracture and singualtion obtains multiple LED elements.
[effect of invention]
According to the invention of technical scheme 1 to 12, the LED element that can obtain with higher yield light acquisition efficiency excellence compared with the past.
Brief description of the drawings
Fig. 1 is the schematic sectional view that represents the structure of LED element 10.
Fig. 2 is the figure that represents the making flow process of LED element 10.
Fig. 3 (a)～(f) is the cutaway view of the situation midway of making that schematically shows LED element 10.
Fig. 4 is the figure that the positive Wa that is illustrated in wafer W is formed with the situation of alignment mark M.
Fig. 5 is the figure that illustrates the formation of laser processing device 100.
Fig. 6 (a)～(c) is the figure that the laser grooving and scribing to adopting laser processing device 100 describes.
Fig. 7 (a)～(c) is the figure for the purification of scribe line SL1 is described.
Fig. 8 (a), (b) are the figure of the wafer W situation while illustrating epitaxial growth.
Fig. 9 is the figure that roughly represents the singualtion situation of breaking device 200.
Embodiment
<LED element and making flow process > thereof
Fig. 1 is the schematic sectional view of structure of LED element 10 representing in the method for making of present embodiment as making object.LED element 10 is on sapphire substrate 1, make all to comprise GaN, A1N or InN or as they mixed crystal III group-III nitride N-shaped layer 2, luminescent layer 3 and p-type layer 4 successively epitaxial growth form, and have in a part that makes N-shaped layer 2 and expose the electrode formation region 5a outfit N-shaped electrode 5 forming, on p-type layer 4, be equipped with the formation of p-type electrode 6.In addition, N-shaped layer 2, luminescent layer 3 and p-type layer 4 are not limited to respectively simple layer, also can form by multiple-layer stacked.For example N-shaped layer 2 also can be formed as resilient coating by orlop, and on this resilient coating, contact layer or coating etc. is set.Or luminescent layer 3 also can form to have for example mode of multiple quantum trap structure.In addition, p-type layer 4 also can comprise coating or contact layer etc.
And the LED element 10 of present embodiment is for making light acquisition improved efficiency, and sapphire substrate 1 and the interface of N-shaped layer 2 is made as to the LED element of male and fomale(M&F) C.
And, also can be following form: the interarea that is opposition side at the interarea of a side with forming described each layer of sapphire substrate 1, arranges the ODR (omnidirectional reflection device: Omni-Directional Reflector) or the DBR (distributed Bragg reflector: Distributed Bragg Reflector) that comprise metallic film.
Fig. 2 is the figure that represents the making flow process of described LED element 10.And Fig. 3 is the cutaway view of the situation midway of making that schematically shows LED element 10.In the present embodiment, utilize so-called multiple-piece (multipiece) processing procedure to manufacture, this multiple-piece processing procedure is to divide cutting board (band LED pattern substrate) in the presumptive area of cutting apart that is set to lattice-shaped and is called Cutting Road ST (with reference to Fig. 6), implement singualtion (chip), this substrate (band LED pattern substrate) is the LED pattern P T that Two-dimensional Gravity And complex becomes to form respectively the unit cell pattern gained of single led element 10 to be set in wafer W form.
In the time making LED element 10 with this form, first, as shown in Fig. 3 (a), prepare wafer W (step S1).The thickness of the wafer W of preparing is preferably 380 μ m～430 μ m left and right.Then, form alignment mark M (step S2) for an interarea (following, also referred to as the front) Wa of this wafer W.
Alignment mark M is the location of the wafer W during for the singualtion of after-stage.Fig. 4 is the figure that the positive Wa that is illustrated in wafer W is formed with the situation of alignment mark M.In Fig. 4, illustrate following situation: at the positive Wa of wafer W, with directional plane (orientation flat) OF two alignment mark M of isolation configuration (M1, M2) abreast, and with vertically two alignment mark M of isolation configuration (M3, M4) of directional plane OF.And, each alignment mark M be formed as cross.Wherein, in wafer W, the shape of the allocation position of alignment mark M or configuration number and alignment mark M is not limited to this, as long as alignment mark M is set with the form that is applicable to location.
In the laser processing device 100 that the formation of alignment mark M is preferably used in the laser grooving and scribing that then this formation is carried out, carry out, namely carry out continuously formation and the laser grooving and scribing of alignment mark M.In this case, alignment mark M is as the cutter trade of laser processing and form.But, utilize laser processing to form alignment mark M nonessential form, as long as can form at least available alignment mark M in the time implementing singualtion, to formation method indefinite.
In addition, the location of the wafer W when laser grooving and scribing of the formation of alignment mark M and then this formation is to use directional plane OF to carry out.
After alignment mark M forms, utilize laser grooving and scribing to form scribe line SL (step S3).
Laser grooving and scribing is that the scribe line SL that implements to become when singualtion fracture starting point is formed on to the processing with pattern substrate.In the past, this laser grooving and scribing was to carry out after formation LED pattern, and but, in the present embodiment, characteristic is to carry out laser incising division before forming LED pattern P T.
Fig. 5 is the figure of illustration for the formation of the laser processing device 100 of laser grooving and scribing.As mentioned above, laser processing device 100 also can be used for the formation of alignment mark M.
Laser processing device 100 mainly comprises: microscope carrier 101, loads wafer W thereon; And controller 110, control the exercises (observing action, alignment actions, processing action etc.) of laser processing device 100; And be configured to and can irradiate pulsed laser beam (also referred to as the laser beam) LB from LASER Light Source LS outgoing by the wafer W to being positioned in microscope carrier 101, and wafer W is implemented to various processing.
As LASER Light Source LS, preferred form is to use Nd:YAG (Neodymium-doped Yttrium Aluminium Garnet, neodymium-doped yttrium-aluminum garnet) laser.Or, can be also to use Nd:YVO
4the form of (Neodymium-Doped Yttrium Vanadate, Nd-doped yttrium vanadate) laser or other Solid State Lasers.In addition preferably subsidiary Q switching of LASER Light Source LS.
As described below, the pulse duration of laser beam LB can suitably be set according to the kind of the scribe line SL that will form.The for example situation of the existing value that is set as nanosecond, also has the situation of the value that is set as picosecond level.In the situation that pulse duration is nanosecond, the wavelength of laser beam LB is preferably subordinated to the wave-length coverage of 150nm～563nm, wherein, using Nd:YAG laser as LASER Light Source LS in the situation that, preferred form is the 3 times of high order harmonic components (wavelength is about 355nm) that use it.On the other hand, in the situation that pulse duration is picosecond level, can use the arbitrary wavelength in the fundamental of illustrative laser above, 2 times of ripples, 3 times of ripples, but in the wafer W so that multipath reflection film (DBR) to be set as processing object, preferred form is to use fundamental.And, more than the preferred 10kHz of repetition rate of pulse and below 200kHz.
The details of laser processing device 100 will be in description.
Fig. 6 is the figure for the laser grooving and scribing that uses laser processing device 100 is described.First, Fig. 6 (a) is the partial enlarged drawing of the interarea Wa of wafer W.More particularly, in Fig. 6 (a), be illustrated in and in wafer W, form the position that becomes Cutting Road ST after LED pattern P T.Here, so-called Cutting Road ST refers to by being split to form the region in a narrow margin as gap portion for two parts of LED element 10, and spread all over wafer W interarea Wa be roughly set as by entire surface lattice-shaped.And, in the substantial middle position of the Width of each Cutting Road ST, formation scribe line SL., in wafer W, be set in advance in many Cutting Road ST that are parallel to each other in all directions in orthogonal both direction, and wafer W is cut apart along scribe line SL in the position of each Cutting Road ST.
In Fig. 6 (a), be represented by dotted lines a near position intersection point of the Cutting Road ST extending along orthogonal both direction.In addition, say exactly, not in actual wafer W, this Cutting Road ST is set, and be in design, set the position that becomes Cutting Road ST.
Using laser processing device 100 to form scribe line SL is the mode by moving along Cutting Road ST with the illuminated position of laser beam LB, in other words, in the mode of utilizing laser beam LB to scan Cutting Road ST, make the outgoing source of laser beam LB and wafer W relatively move and realize.
Wherein, in more detail, the formation form of scribe line SL is divided into two forms substantially.
First form is as shown in Fig. 6 (b), forms the continuity scribe line SL (S L1) along Cutting Road ST.This form is by the time that laser beam LB scans, and makes the range of work (being roughly equivalent to the irradiated area that each simple venation is washed off) of washing off from each simple venation of laser processing device 100 emitting laser light beam LB repeat to realize.In the situation that forming this continuity scribe line SL1, preferably the pulse duration of laser beam LB is made as to nanosecond, but, also can be the form of other big or small pulse durations of application.In the case of the pulse duration of laser beam LB is made as nanosecond, be preferably made as 50nsec～300nsec.
In addition, continuity scribe line SL1 can be formed as being the processing groove of analysing and observe V word shape as shown in Fig. 3 (b), also can form with the form that forms the upgrading region (in other words, the processing groove shown in Fig. 3 (b) becomes the state by upgrading region landfill) of analysing and observe V word shape.The former is that the sapphire in the irradiated area by making to be present in laser beam LB evaporates, disperses and realize, and the latter is that the irradiation by utilizing laser beam LB makes sapphire realize at this irradiated area melting upgrading.Described in these, situation can optionally realize by changing the illuminate condition of laser beam LB.And, in the situation that forming alignment mark M, also can apply the processing conditions identical with scribe line SL1.
On the other hand, second form is as shown in Fig. 6 (c), forms discretely many cutter trade P along Cutting Road ST.In this case, strictly speaking, not form the cutter trade of wire at Cutting Road ST, but in the present embodiment, the formation of the cutter trade row under this form is called to the formation of discreteness scribe line SL (SL2).
The formation of discreteness scribe line SL2 is by the time that laser beam LB scans, and makes the irradiated area of washing off from each simple venation of laser processing device 100 emitting laser light beam LB discrete and realize.The formation of this discreteness scribe line SL2 is by the pulse duration of laser beam LB is made as to picosecond level, and suitably adjusts the repetition rate of laser beam LB and with respect to the relative moving speed of wafer W and realize.In the case of the pulse duration of laser beam LB is made as picosecond level, be preferably made as 2psec～40psec.In addition, for realizing well singualtion, the irradiated area of preferably washing off at each simple venation isolates under the condition of 2 about μ m～20 μ m and processes.
In addition, in the situation that forming discreteness scribe line SL2 according to this form, in each cutter trade P by the melting of generations sapphire, evaporate, disperse, and at cutter trade P each other, will produce the crackle of both links.
On the other hand, at the thickness direction of wafer W, crackle also may be (following towards another interarea from the bottom of scribe line SL, also referred to as the back side) Wb expansion, but, because the formation degree of depth of scribe line SL mostly is tens microns of left and right most, the expansion of this crackle does not reach the degree that wafer W is cut apart conventionally.In addition, crackle also may produce along the expansion of this thickness direction in the situation that forming continuity scribe line SL1.
After scribe line SL forms, interarea Wa is carried out to etching (step S4).There is the situation of carrying out in order to make interarea Wa become male and fomale(M&F) C and by the situation that removes fused mass in this etching.Carrying out in etched situation side by side etching fused mass for wafer W being made to PSS (Patterned Sapphire Substrate).
For example also can be following form: forming after resist mask in the mode of covering the part that becomes protuberance, by carrying out RIE (Reactive Ion Etching), and at interarea Wa formation rule protuberance.Or, also can be utilizing evaporation to make after the metal microparticle such as Ni or Pd is attached to interarea Wa discretely as mask, by carrying out ICP-RIE (inductively coupled plasma type reactive ion etching: Inductive Coupled Plasma Reactive Ion Etching), and form the projection of random triangle at interarea Wa.In either case, all can be by suitably changing manufacturing conditions and the etching condition of mask, and make the interarea Wa of wafer W become the male and fomale(M&F) C of various shapes.
In addition, about the forming part of alignment mark M, both can be and covered, avoided etched form, and if form the situation of alignment mark M with the degree not disappearing because of etching, also can not carry out this and cover.
In Fig. 3 (c), illustrate the wafer W after etch processes.In addition, in Fig. 3 (c), illustrating protuberance becomes the male and fomale(M&F) C that analyses and observe triangle, and but, the formation form of male and fomale(M&F) is not limited to this, for example, also can be the form that forms as described in Patent Document 1 the protuberance of analysing and observe trapezoidal shape.
In addition, also can say, by the processing procedure via hereto, become male and fomale(M&F) C and be formed with alignment mark M and the wafer W of the LED element manufacture use of scribe line SL and obtain interarea Wa.
In addition, in the case of utilizing the laser beam LB that pulse duration is nanosecond to be formed with continuity scribe line SL1, these etch processes have the effect that scribe line SL1 is purified concurrently.Fig. 7 is the figure that the purification of this scribe line SL1 is described.
In the case of utilizing the laser beam LB that pulse duration is nanosecond to be formed with continuity scribe line SL1, as shown in Fig. 7 (a), exist at the processing groove that forms scribe line SL, be formed with the situation that comprises the sapphire upgrading region AR solidifying again after evaporation.Or in the case of producing the processing conditions of melting upgrading, scribe line SL becomes the upgrading region of analysing and observe V word shape.Because these upgrading regions mainly comprise the sapphire of polycrystalline or amorphous, so if remaining these upgrading regions can become the main cause causing from the light acquisition Efficiency Decreasing of LED element 10.But these upgrading regions are because of compared with wafer W entirety, mechanical strength dies down, thus as shown in Fig. 7 (b), form as described above concavo-convex etched during, relatively easily by evaporation, remove.Its result, as shown in Fig. 7 (c), at the time point that forms male and fomale(M&F) C, can realize scribe line SL and purify.
In addition, in the case of utilizing the pulsed laser beam LB of picosecond level to form discreteness scribe line SL2, in the cutter trade P that forms this scribe line SL2, be difficult for remaining sapphire originally.But, in this case, do not get rid of the purification that utilizes as described above etching to carry out.
The interarea Wa that the wafer W of male and fomale(M&F) C is being set implementing etching forms described LED pattern P T (step S5)., become the epitaxial growth of III group iii nitride layer and the formation of N-shaped electrode 5 and p-type electrode 6 of N-shaped layer 2, luminescent layer 3 and p-type layer 4.In Fig. 3 (d), be illustrated in the situation that is forming LED pattern P T on the male and fomale(M&F) C of wafer W.
The epitaxial growth of III group iii nitride layer can be applied various well-known epitaxial growth methods.For example can utilize the methods such as MOCVD (Metal organic Chemical Vapor Deposition, metal organic chemical vapor deposition) method or MBE (Molecular Beam Epitaxy, molecular beam epitaxy) method to carry out.Actual epitaxial growth condition (chip temperature, raw material composition, raw material gas flow, feedstock gas pressures, growth time etc.) while using each growing method is to set according to composition or the thickness etc. of the N-shaped layer 2 that will form, luminescent layer 3 and p-type layer 4.And, in the formation of N-shaped electrode 5 and p-type electrode 6, can suitably use the various film forming methods such as evaporation or sputter.Electrode material can suitably be selected in the various metal materials such as Ni, Pd, Pt, Au, A1.Or N-shaped electrode 5 and p-type electrode 6 also can be set to the multi-layered electrode that the different metal levels that form of lamination form.In addition, forming after LED pattern P T, utilize lithographic process and etching, a part that makes N-shaped layer 2 forms after region 5a exposes as electrode, forms N-shaped electrode 5.
Fig. 8 is the figure of the situation of the wafer W while illustrating epitaxial growth.In the present embodiment, by the wafer W that is forming scribe line SL and male and fomale(M&F) C as shown in Fig. 8 (a) for epitaxial growth processing, and as shown in Fig. 8 (b), in the time of epitaxial growth, heated chip W.Heating-up temperature is now different because of the composition etc. of the layer that will form, but is roughly 600 DEG C～1200 DEG C left and right.If with this form heated chip W, although omitted diagram in Fig. 3 (d), will produce stress in wafer W.And because of this effect of stress, crackle CR will expand towards interarea Wb from scribe line SL.The fracture that the expansion of this crackle CR has while making after-stage singualtion becomes easy effect.In addition, the Crack Extension in this situation also when forming scribe line SL similarly, do not reach the degree that wafer W is cut apart.Or, the expansion of the crackle CR that the heating also can estimate this epitaxial growth time causes, and while the formation degree of depth of scribe line SL being less than form to form scribe line SL after LED pattern P T.
Carry out after laser grooving and scribing, from back side Wb mono-side, wafer W is ground to (step S6) to required thickness.
The grinding of wafer W preferably utilizes cmp (CMP, Chemical Mechanical Polishing) to carry out.In the time grinding, at interarea Wa side laminating screening glass, to avoid wafer W disjunction.By this grinding, and make the thickness of the wafer W that is once 380 μ m～430 μ m left and right become 80 μ m～200 μ m left and right.In Fig. 3 (e), illustrate the wafer W that is ground to the dotted line place shown in Fig. 3 (d).
After grinding finishes, last, by rupturing along scribe line SL, and make to be with LED pattern substrate singualtion, thereby as shown in Fig. 3 (f), obtain multiple LED elements 10 (step S7).In addition, when in the time that LED element 10 arranges ODR or DBR, forming after LED pattern P T and before rupturing, utilize the well-known methods such as vapour deposition method, interarea Wb is formed to the metallic film as ODR or DBR.
Fig. 9 is the figure that roughly represents to utilize the singualtion situation that breaking device 200 implements.Breaking device 200 is to utilize the method for supported at three point by the device of object fracture.Breaking device 200 comprises a upside breaking bar (break bar) 201 and two downside breaking bars 202.Upside breaking bar 201 is to be the cylindrical component of analysing and observe triangle or analysing and observe isosceles trapezoid shape, and downside breaking bar 202 is tabular components.
In the time implementing singualtion, the band pattern substrate of LED pattern P T will be formed with in wafer W, the mode that becomes downside with LED pattern P T is carried out horizontal support, and undertaken by alignment mark M under the state of wafer W location, by upside breaking bar 201 and scribe line SL be configured in abreast the top of interarea Wb and the formation position of scribe line SL directly over position, two downside breaking bars 202 are configured in to the below of LED pattern P T and the position of the formation position symmetry of scribe line SL relatively.Then, make upside breaking bar 201 be connected to interarea Wb directly over the formation position of scribe line SL, and make two downside breaking bars, 202 one sides keep the state of scribe line SL symmetry relatively, one side is contacted with LED pattern P T.Thus, because of the stress of effect, from the constantly crackle arrival interarea Wb of expansion of scribe line SL, thereby make to be with pattern substrate to rupture along scribe line SL.
Can be by all scribe line SL are carried out to this fracture, and obtain multiple LED elements 10.
< first carries out the action effect > of laser grooving and scribing
As mentioned above, in the manufacture method of the LED of present embodiment element, utilize laser grooving and scribing after the wafer W that forms alignment mark M forms scribe line SL, carry out the formation of etched concavo-convex processing and LED pattern P T, after this, implement singualtion.Below, the action effect of making LED element according to this flow process is described.
First, as in the past, after forming LED pattern P T, carry out in the situation of laser grooving and scribing, there is possibility LED pattern P T being damaged because of laser beam LB, and the in the situation that of present embodiment, owing to carrying out laser grooving and scribing under the state not forming LED pattern P T, so can not damage LED pattern P T.
Second, in flow process situation in the past, for avoid the impact of laser beam LB on LED pattern P T as far as possible, and using the interarea Wb contrary with the interarea Wa that is forming LED pattern P T as plane of illumination, carry out laser grooving and scribing, therefore, there is following situation: in the time of fracture, cause the crackle of expansion from scribe line SL to arrive LED pattern P T, thereby in LED pattern P T part but not along in Cutting Road ST implement cut apart, and the in the situation that of present embodiment, due to before formation LED pattern P T, carry out laser grooving and scribing from interarea Wa mono-side, so can not implement to cut apart in LED pattern P T part, therefore, can obtain LED element 10 with high yield.
The 3rd, in flow process situation in the past, owing to utilizing LED pattern P T Cutting Road ST to be physically divided under the state in region in a narrow margin, to this Cutting Road ST irradiating laser light beam LB, so the restriction of processing conditions is larger, and the in the situation that of present embodiment, although the position of Cutting Road ST is fixed, actual processing object is the wafer W that does not have LED pattern P T, therefore, the setting degree of freedom of processing conditions is higher, thereby condition that can be better is carried out laser grooving and scribing.
The 4th, described in utilization, flow process is in the past made to have and is comprised that the ODR of metallic film or the LED element of DBR are because causing this metallic film reflect beams of laser light, so comparatively difficulty, and the in the situation that of present embodiment, owing to carrying out laser grooving and scribing before forming metallic film, so also can make without problems the LED element that comprises ODR or DBR and light acquisition efficiency excellence.
The 5th, laser beam LB in the pulse duration of utilizing nanosecond forms continuity scribe line SL1, although form upgrading region at the position of scribe line SL1, the etching by after this and by this upgrading region removal, therefore, finally make the light acquisition improved efficiency of LED element.
The 6th, form LED pattern after laser grooving and scribing time, in the time of heated chip W, crackle CR will expand from scribe line SL, adopt the situation of flow process in the past so can make the formation degree of depth of scribe line SL be less than.
The 7th because by the wafer W that forms alignment mark and carried out concavo-convex processing by laser grooving and scribing and then etching for the forming of LED pattern P T, so, buy manufacturer that wafer manufactures LED element without forming alignment mark or carrying out laser grooving and scribing.Its result, is directly connected to the cost of LED element.
Owing to can obtaining above action effect, so according to present embodiment, can obtain with the yield than in the past high the LED element of light acquisition efficiency excellence.
The detailed formation > of < laser processing device
Finally, the detailed formation of the laser processing device 100 shown in Fig. 5 is described.As mentioned above, laser processing device 100 mainly comprises: microscope carrier 101, loads wafer W thereon; And controller 110, control the exercises of laser processing device 100.
Microscope carrier 101 can utilize travel mechanism 102 and move in the horizontal direction.Travel mechanism 102 moves along specific XY two direction of principal axis in horizontal plane because the effect of not shown driving element makes microscope carrier 101.Thus, realize the movement etc. of laser beam irradiation position.In addition, travel mechanism 102 also can carry out moving with the rotation in the horizontal plane of specific rotating shaft center (θ rotation) with horizontal drive independently.
And, in laser processing device 100, can pass through not shown picture pick-up device, observe the back side observation etc. of these wafer W across this microscope carrier 101 and carry out directly observing the front of this wafer W observe or be certainly positioned in microscope carrier 101 1 sides (present embodiment is interarea Wb) from irradiating laser light beam one side (present embodiment is interarea Wa).
Microscope carrier 101 is to be formed by transparent components such as quartz, but in the inside of this microscope carrier 101, the not shown suction pipe arrangement as air suction way is being set, and being used for interarea Wb fitting, to adhere to the wafer W absorption of screening glass AS fixing.Suction with pipe arrangement be for example by utilizations be machined in microscope carrier 101 ad-hoc location hole arrange.
Be positioned under the state on microscope carrier 101 in the wafer W that adheres to screening glass AS by fitting; for example utilize the suction device such as suction pump 103 to aspirate suction pipe arrangement; and give negative pressure to suction with the SS that is arranged on microscope carrier 101 mounting surface side front ends of pipe arrangement; thus, wafer W (and adhering to screening glass AS) is fixed on to microscope carrier 101.
In more detail, in laser processing device 100, send laser beam LB from LASER Light Source LS, utilize included dichronic mirror 104 in the illustrated lens barrel of omission to make after this laser beam LB reflection, utilize collector lens 105 to focus on the mode at processed position of the wafer W that is positioned in microscope carrier 101, make to expose to wafer W after this laser beam LB optically focused.Laser beam LB is towards wafer W outgoing taking collector lens 105 as direct outgoing source.Can be by by the mobile combination of the irradiation of this laser beam LB and microscope carrier 101, and one in the face of relatively scan laser light beam LB of wafer W, simultaneously carries out the processing of wafer W.
In addition, in laser processing device 100, when processing while processing, also can be optionally, make focal position depart from wittingly irradiating laser light beam LB under the positive defocus condition of wafer W.In the present embodiment, preferably by values of defocus (focal position relatively from wafer W just facing to the bias of inner direction) be set as 5 μ m more than and scope below 40 μ m.
As LASER Light Source LS, preferred form is to use Nd:YAG laser.Or, also can be and use Nd:YVO
4the form of laser or other Solid State Lasers.In addition preferably subsidiary Q switching of LASER Light Source LS.
And repetition rate, the adjustment of pulse duration etc. of the wavelength of the laser beam LB sending from LASER Light Source LS or output, pulse are to realize by the irradiation control part 123 of controller 110.If send the specific settings signal according to cooked mode setting data D2 from processing handling part 125 to irradiating control part 123, irradiate control part 123 according to this setting signal, the illuminate condition of setting laser light beam LB.
The beam diameter that laser beam LB is preferably 1 μ m～10 μ m left and right by collector lens 105 constrictions irradiates.In this case, the peak power density under laser beam LB irradiation is about 1GW/cm
2～10GW/cm
2.
In addition, both can be rotatory polarization from the polarized condition of LASER Light Source LS emitting laser light beam LB, also can be linear polarization.Wherein, the in the situation that of linear polarization, with regard to the bending in processing cross section in crystallinity machined material and the viewpoint of S. E. A., preferably polarization direction and scanning direction almost parallel, for example, in the angle that both become is ± 1 °.And in the situation that emergent light is linear polarization, preferably laser processing device 100 comprises not shown attenuator.Attenuator is the appropriate location being configured in the light path of laser beam LB, and bears the effect of the intensity of adjusting the emitting laser light beam LB of institute.
Controller 110 also comprises: control part 120, control the action of described each several part, and realize the processing of the wafer W under various forms and process realization; And storage part 130, the program 130P of action or the various data of processing processing time institute's reference of laser processing device 100 are controlled in storage.
Control part 120 is to realize by general computer such as such as personal computer or microcomputer etc., and by the program 130P that is stored in storage part 130 is read in to this computer and carried out, and function composing key element using various inscapes as control part 120 realizes.
Specifically, control part 120 mainly comprises: drive control part 121, control the action of the various drive parts that driving or the focusing action of collector lens 105 etc. of travel mechanism 102 to microscope carrier 101 is relevant to processing processing; Imaging control part 122, controls the shooting of not shown picture pick-up device to wafer W; Irradiate control part 123, control the irradiation from the laser beam LB of LASER Light Source LS; Absorption and control portion 124, control and suck device 103 makes the absorption fixing action of wafer W for microscope carrier 101; And processing handling part 125, according to the Working position data D1 being endowed and cooked mode setting data D2, carry out the processing processing to processing object position.
Storage part 130 is to realize by storage mediums such as ROM (Read Only Memory, read-only memory) or RAM (Random Access Memory, random access memory) and hard disks.In storage part 130, storing the Working position data D1 of the formation position of the scribe line SL recording in wafer W, and storing and the corresponding cooked mode setting data D2 that records drive condition about the conditioned disjunction microscope carrier 101 of the parameters of laser beam (or they can setting range) etc. of processing form.In addition, storage part 130 form that the inscape of the computer of realizing control part 120 realizes of both can having served as reasons, and also inferior in hard disk situation, also can be the form arranging dividually with this computer.
In addition, the various input instructions that operator gives laser processing device 100 preferably utilize the GUI (Graphical User Interface, graphic user interface) realizing in controller 110 to carry out.For example, by the effect of processing handling part 125, in GUI, provide processing processing menu.
In the laser processing device 100 with formation as above, processing handling part 125 obtains Working position data D1, and obtain the processing conditions corresponding with selected cooked mode from cooked mode setting data D2, to carry out and the corresponding mode of moving of this condition, utilize drive control part 121 or irradiation control part 123 and other control parts to control the action of corresponding each several part, thus, optionally carry out the processing under various cooked modes.Cooked mode preference is as processed under the effect of handling part 125, according to utilizing the processing processing menu that offers operator to select in controller 110.
Specifically, can be by changing the combination with the condition of scanning to wafer W scan laser light beam LB by microscope carrier 101 is moved from the illuminate condition of the laser beam LB of LASER Light Source LS, and under suitable processing conditions, form continuity scribe line SL1 or form discrete scribe line SL2 or form the various processing of alignment mark M etc.
< changes routine >
Described execution mode is to carry out laser grooving and scribing or etch processes after formation alignment mark, but the formation of alignment mark is not limited to this opportunity.For example, in the time being used for forming the etching of male and fomale(M&F) C, also can form together alignment mark by this etch processes.
And, in the situation that carrying out laser grooving and scribing taking directional plane OF as benchmark, in the step after laser grooving and scribing, also can be by scribe line as alignment mark, so also can dependently form alignment mark.
In LED element 10, and nonessential sapphire substrate 1 and the interface of N-shaped layer 2 of making becomes male and fomale(M&F) C.Therefore, the wafer W etching in step S5 nonessential form.But with regard to improving the viewpoint of light acquisition efficiency, preferably make this interface become male and fomale(M&F) C.
[explanation of symbol]
Claims (12)
1. the manufacture method of a LED element, it is characterized in that: by be set to lattice-shaped cut apart presumptive area cut apart wafer implement singualtion manufacture LED element, this wafer is Two-dimensional Gravity And complex to be set on an interarea become to form respectively the LED pattern that the unit cell pattern of single led element forms, and the manufacture method of this LED element comprises:
Delineation step, carries out laser grooving and scribing along cutting apart presumptive area described in the described LED pattern of formation wafer substrate before, forms scribe line;
LED pattern forms step, at the described interarea of the described wafer substrate after described delineation step, forms LED pattern, obtains described wafer; And
Singualtion step, makes the described wafer that utilizes described LED pattern to form step acquisition by rupturing and singualtion along described scribe line, obtains multiple LED elements.
2. the manufacture method of LED element according to claim 1, is characterized in that:
Also comprise the described interarea that forms the described wafer substrate after described scribe line in described delineation step is carried out to etched etching step, and
Form in step at described LED pattern, in described etching step, on etched described interarea, form described LED pattern.
3. the manufacture method of LED element according to claim 1, is characterized in that:
Also comprise the described interarea that forms the described wafer substrate after described scribe line in described delineation step is carried out to etching, form the etching step of male and fomale(M&F), and
Form in step at described LED pattern, on the described interarea that is formed with described male and fomale(M&F), form described LED pattern.
4. according to the manufacture method of the LED element described in any one in claims 1 to 3, it is characterized in that:
In described delineation step, be that the pulsed laser beam of picosecond level is for described laser grooving and scribing by pulse duration.
5. the manufacture method of LED element according to claim 4, is characterized in that:
In described delineation step, discrete by the irradiated area that each simple venation of described pulsed laser beam is washed off, and form the row of described scribe line as many cutter trades of mutual isolation.
6. according to the manufacture method of the LED element described in any one in claims 1 to 3, it is characterized in that:
In described delineation step, the pulsed laser beam that is nanosecond by pulse duration is for described laser grooving and scribing.
7. the manufacture method of LED element according to claim 6, is characterized in that:
In described delineation step, form continuously described scribe line.
8. according to the manufacture method of the LED element described in claim 2 or 3, it is characterized in that:
In described delineation step, the pulsed laser beam that is nanosecond by pulse duration is for described laser grooving and scribing, and
In described etching step, the described interarea of described wafer substrate is carried out to etching, and the upgrading region forming along described scribe line is removed.
9. according to the manufacture method of the LED element described in any one in claims 1 to 3, it is characterized in that:
Form in step at described LED pattern, by heating described wafer substrate, and make in described wafer substrate to produce stress, make the Crack Extension from described scribe line.
10. according to the manufacture method of the LED element described in any one in claims 1 to 3, it is characterized in that:
Also be included in the described interarea that forms described LED pattern described wafer substrate before, the alignment mark that forms alignment mark forms step, and
In described delineation step, along utilize described alignment mark form step form described wafer substrate after described alignment mark described in cut apart presumptive area, carry out described laser grooving and scribing.
11. 1 kinds of LED element manufacture wafer substrates, it is characterized in that: Two-dimensional Gravity And complex is set on an interarea and becomes to form respectively after the LED pattern that the unit cell pattern of single led element forms, by cutting apart in the presumptive area of cutting apart that is set to lattice-shaped, and manufacture LED element
The described interarea of described wafer substrate is male and fomale(M&F), and
Comprise at described interarea:
Alignment mark, the location while cutting apart for cutting apart presumptive area described in edge; And
Scribe line, cuts apart presumptive area setting by carrying out laser grooving and scribing described in edge.
The manufacturing installation of 12. 1 kinds of LED elements, it is characterized in that: be used for by be set to lattice-shaped cut apart presumptive area cut apart wafer implement singualtion manufacture LED element, this wafer is Two-dimensional Gravity And complex to be set on an interarea become to form respectively the LED pattern that the unit cell pattern of single led element forms, and the manufacturing installation of this LED element comprises:
Delineation device, carries out laser grooving and scribing along cutting apart presumptive area described in the described LED pattern of formation wafer substrate before, forms scribe line;
LED pattern forms device, utilizing described delineation device to form the described interarea of the described wafer substrate after scribe line, forms LED pattern, obtains described wafer; And
Singualtion device, makes to utilize described LED pattern to form described wafer that device obtains by along described scribe line fracture and singualtion obtains multiple LED elements.
Applications Claiming Priority (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-037369 | 2013-02-27 | ||
| JP2013-037370 | 2013-02-27 | ||
| JP2013037368 | 2013-02-27 | ||
| JP2013-037367 | 2013-02-27 | ||
| JP2013-037368 | 2013-02-27 | ||
| JP2013037367 | 2013-02-27 | ||
| JP2013037370 | 2013-02-27 | ||
| JP2013037369 | 2013-02-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104009129A true CN104009129A (en) | 2014-08-27 |
Family
ID=51369710
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410051823.7A Pending CN104009129A (en) | 2013-02-27 | 2014-02-14 | LED element manufacturing method, wafer base material for manufacturing and manufacturing device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2014195040A (en) |
| KR (1) | KR20140107121A (en) |
| CN (1) | CN104009129A (en) |
| TW (1) | TW201436017A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107946284A (en) * | 2017-11-03 | 2018-04-20 | 马鞍山太时芯光科技有限公司 | A kind of LED chip Cutting Road mark and preparation method thereof |
| CN109148559A (en) * | 2017-06-28 | 2019-01-04 | 矽创电子股份有限公司 | Crystal circle structure |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6550722B2 (en) | 2014-10-31 | 2019-07-31 | 三星ダイヤモンド工業株式会社 | Break device, method of attaching break blade to break device, and cartridge for break blade |
| JP6375875B2 (en) | 2014-10-31 | 2018-08-22 | 三星ダイヤモンド工業株式会社 | Break device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080070380A1 (en) * | 2004-06-11 | 2008-03-20 | Showda Denko K.K. | Production Method of Compound Semiconductor Device Wafer |
| CN101386467A (en) * | 2007-09-11 | 2009-03-18 | 三星钻石工业股份有限公司 | Method and device for dividing brittle substrate |
| CN101908505A (en) * | 2010-06-24 | 2010-12-08 | 上海蓝光科技有限公司 | Method for manufacturing light-emitting diode chip |
| CN101965242A (en) * | 2008-03-07 | 2011-02-02 | Imra美国公司 | Utilize the transparent material processing of ultra-short pulse laser |
| CN102339924A (en) * | 2010-07-19 | 2012-02-01 | 华新丽华股份有限公司 | Gan light emitting diode and method for increasing light extraction on gan light emitting diode |
| CN102569543A (en) * | 2010-12-30 | 2012-07-11 | 比亚迪股份有限公司 | Manufacture method of light emitting diode chips |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2748355B2 (en) * | 1993-10-21 | 1998-05-06 | 日亜化学工業株式会社 | Method of manufacturing gallium nitride based compound semiconductor chip |
| JP4762458B2 (en) * | 2000-09-13 | 2011-08-31 | 浜松ホトニクス株式会社 | Laser processing equipment |
| JP2004259846A (en) * | 2003-02-25 | 2004-09-16 | Ogura Jewel Ind Co Ltd | Separation method for element formed on substrate |
| JP4385746B2 (en) * | 2003-11-28 | 2009-12-16 | 三菱化学株式会社 | Nitride semiconductor device manufacturing method |
| JP5196403B2 (en) * | 2009-03-23 | 2013-05-15 | 国立大学法人山口大学 | Method for manufacturing sapphire substrate and semiconductor device |
| KR101429837B1 (en) * | 2010-01-19 | 2014-08-12 | 샤프 가부시키가이샤 | Functional element and manufacturing method of same |
| US20120175652A1 (en) * | 2011-01-06 | 2012-07-12 | Electro Scientific Industries, Inc. | Method and apparatus for improved singulation of light emitting devices |
-
2013
- 2013-10-11 JP JP2013213701A patent/JP2014195040A/en active Pending
-
2014
- 2014-02-07 TW TW103104156A patent/TW201436017A/en unknown
- 2014-02-12 KR KR1020140015886A patent/KR20140107121A/en not_active Application Discontinuation
- 2014-02-14 CN CN201410051823.7A patent/CN104009129A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080070380A1 (en) * | 2004-06-11 | 2008-03-20 | Showda Denko K.K. | Production Method of Compound Semiconductor Device Wafer |
| CN101386467A (en) * | 2007-09-11 | 2009-03-18 | 三星钻石工业股份有限公司 | Method and device for dividing brittle substrate |
| CN101965242A (en) * | 2008-03-07 | 2011-02-02 | Imra美国公司 | Utilize the transparent material processing of ultra-short pulse laser |
| CN101908505A (en) * | 2010-06-24 | 2010-12-08 | 上海蓝光科技有限公司 | Method for manufacturing light-emitting diode chip |
| CN102339924A (en) * | 2010-07-19 | 2012-02-01 | 华新丽华股份有限公司 | Gan light emitting diode and method for increasing light extraction on gan light emitting diode |
| CN102569543A (en) * | 2010-12-30 | 2012-07-11 | 比亚迪股份有限公司 | Manufacture method of light emitting diode chips |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109148559A (en) * | 2017-06-28 | 2019-01-04 | 矽创电子股份有限公司 | Crystal circle structure |
| CN107946284A (en) * | 2017-11-03 | 2018-04-20 | 马鞍山太时芯光科技有限公司 | A kind of LED chip Cutting Road mark and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20140107121A (en) | 2014-09-04 |
| JP2014195040A (en) | 2014-10-09 |
| TW201436017A (en) | 2014-09-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2014030519A1 (en) | Workpiece cutting method | |
| TWI502764B (en) | The processing method of the substrate with LED pattern | |
| KR101282509B1 (en) | Laser beam machining method and semiconductor chip | |
| KR101721709B1 (en) | Method for cutting processing target | |
| KR101802527B1 (en) | Method for cutting object to be processed | |
| WO2014030518A1 (en) | Method for cutting object to be processed | |
| WO2013176089A1 (en) | Cutting method for item to be processed, item to be processed and semiconductor element | |
| WO2014030520A1 (en) | Workpiece cutting method | |
| TWI753997B (en) | Method of manufacturing light emitting element | |
| JP2009064983A (en) | Manufacturing method of semiconductor laser element | |
| CN104009129A (en) | LED element manufacturing method, wafer base material for manufacturing and manufacturing device | |
| WO2020130109A1 (en) | Laser machining method and production method for semiconductor member | |
| US20220084827A1 (en) | Laminated element manufacturing method | |
| WO2014030517A1 (en) | Workpiece cutting method | |
| JP6012185B2 (en) | Manufacturing method of semiconductor device | |
| JP2015162565A (en) | Substrate with led pattern, method for manufacturing the same, and method for manufacturing led element | |
| TWI771379B (en) | Chip manufacturing method and silicon chip | |
| WO2020130054A1 (en) | Laser processing method, semiconductor member manufacturing method, and laser processing device | |
| US11069672B2 (en) | Laminated element manufacturing method | |
| JP2015144180A (en) | Wafer for led element manufacturing, manufacturing method thereof, and led element | |
| CN104117766A (en) | Method and device for processing patterned substrate | |
| JP2013157455A (en) | Method for manufacturing semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| AD01 | Patent right deemed abandoned | ||
| AD01 | Patent right deemed abandoned |
Effective date of abandoning: 20180601 |