CN104765247A - Making method of submicron grating - Google Patents
Making method of submicron grating Download PDFInfo
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- CN104765247A CN104765247A CN201410003127.9A CN201410003127A CN104765247A CN 104765247 A CN104765247 A CN 104765247A CN 201410003127 A CN201410003127 A CN 201410003127A CN 104765247 A CN104765247 A CN 104765247A
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Abstract
The invention discloses a making method of a submicron grating. The method comprises the following steps: 1, coating a photoresist, and hardening; 2, carrying out optic exposure on the central portion of a line through using a mask; 3, carrying out electron beam exposure, and overlaying the edge details of the line to the central portion of the line through overlaying marking; 4, developing, and post-processing; 5, removing the photoresist to make the grating; or comprises the following steps: 1, coating a photoresist, and hardening; 2, carrying out optic exposure to expose edge details of a line; 3, carrying out optic exposure on the central portion of the line by using a mask; 4, developing, and post-processing; and 5, removing the photoresist to make the grating. The grating is made through one-time photoresist coating, two-time exposure and one-time developing, so the making technology is simplified, and the time and the cost are saved; and process steps are simplified, so deformation due to multi-time process splicing is avoided, the precision of the line of the grating is guaranteed, and the performances of a device or a graph are improved.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, be specifically related to a kind of method for making of submicron grating.
Background technology
In the manufacture craft of plane grating or frequency-selective surfaces, Graphic transitions need be carried out by photoetching.Each photoetching all needs one piece to have corresponding geometric photo etched mask, i.e. reticle-Mask.Mask is the benchmark of photoetching process, and the size of grating determines the size of photo etched mask.
Because optical exposure technology is close to the limit, as: i line source (365nm) can be used for making the lines of about 0.35um; Quasi-molecule laser source (248nm/193nm) can be used for making the lines of about 0.25um/0.18um size.Therefore, the fine pattern that the method utilizing traditional optical exposure technology and photo etched mask to combine is difficult to realize 0.1um makes.The normal electron beam lithography that adopts realizes this purpose at present.
E-beam direct-writing exposure technology is without the need to the reticle needed for ordinary optical photoetching, and it directly reads the domain of design from computer, afterwards according to the figure designed in domain, by beam bombardment electron beam adhesive, by Graphic transitions on sample.Electron-beam direct writing can realize the making of a few nanometer to the fine lines of 0.1 micron, is directly controlled and have high alignment accuracy by computer; But in the making of grating, there is the line size of grating greatly larger, as all adopted beamwriter lithography to realize, then needing the timing of at substantial.
Inner for same figure, the lines that existing size is larger, when having again size to be less than the lines of 0.1um, the method of general employing optical exposure and electron beam exposure mixed exposure realizes, as " mixed exposure method that contact exposure combines with direct electronic beam writing technology " recorded in patent CN1392593A.
Existing method is generally optical lithography and beamwriter lithography separately makes, and front and back Twi-lithography makes figure connect together by overlay method, finally completes the making of whole figure, and its concrete technology step is as follows:
1, common photoresist is coated with, post bake;
2, adopt mask plate to carry out optical exposure, development to large bargraphs, and carry out corresponding subsequent technique;
3, Tu electron beam resist, post bake;
4, adopt electron beam exposure, by overlay mark, little bargraphs cover is carved into large lines inside, development, and carries out corresponding subsequent technique.
Wherein 1,2 liang of step can be exchanged with 3,4 liang of steps in some cases, and namely order is 3,4,1,2.By said method, the precision of the lines of large figure can be greater than 0.1um, and the splicing of twice subsequent technique in front and back exists vestige.Such as, when subsequent technique is plated film, due to large lines leading film forming, when after employing beamwriter lithography alignment, when carrying out the plated film of little lines again, there is a surface of contact in little lines and large lines stitching portion, and the existence of this surface of contact can affect the performance such as optics and electricity of figure.
Summary of the invention
The technical problem to be solved in the present invention is to simplify existing processing step, improves grating lines precision.
Technical scheme of the present invention comprises a kind of method for making of submicron grating, comprises the steps,
S1, resist coating, post bake; S2, mask plate is utilized to carry out optical exposure to the core of lines; S3, employing electron beam exposure, be carved into the core of described lines by line edge details cover by overlay mark; S4, development, and aftertreatment technology; S5, to remove photoresist, complete preparing grating;
Or, S1, resist coating, post bake; S2, employing electron beam exposure, expose line edge details; S3, mask plate is utilized to carry out optical exposure to the core of lines; S4, development, and aftertreatment technology; S5, to remove photoresist, complete preparing grating.
Preferably, described photoresist is to optical wavelength and the equal responsive photoresist of electron beam.
Preferably, described optical exposure adopts Proximity stepper, contact photoetching machine or projection aligner.
Preferably, the line edge details of described electron beam exposure is of a size of 100nm-200nm.
Preferably, described aftertreatment technology is plated film or etching.
Another technical scheme of the present invention comprises a kind of method for making of submicron grating, and it comprises the steps,
S1, resist coating, post bake; S2, mask plate is utilized to carry out optical exposure to large bargraphs; S3, employing electron beam exposure, be carved into described large bargraphs inside by overlay mark by little bargraphs cover; S4, development, and aftertreatment technology; S5, to remove photoresist, complete preparing grating;
Or, S1, resist coating, post bake; S2, employing electron beam exposure, expose little bargraphs; S3, mask plate is utilized to carry out optical exposure to large bargraphs; S4, development, and aftertreatment technology; S5, to remove photoresist, complete preparing grating.
Preferably, described photoresist is to optical wavelength and the equal responsive photoresist of electron beam.
Preferably, described optical exposure adopts Proximity stepper, contact photoetching machine or projection aligner.
Preferably, described aftertreatment technology is plated film or etching.
Beneficial effect of the present invention comprises: make grating by gluing, double exposure, a developing process, manufacture craft simplifies, and saves time and cost; Meanwhile, because processing step simplifies, avoid repeatedly technique to splice the distortion caused, ensure that the precision of grating lines, improve the performance of device or figure.
Accompanying drawing explanation
Fig. 1 is the target submicron grating structural drawing in the step grating of two dimension in the embodiment of the present invention.
Fig. 2 is the mask plate structure figure in the embodiment of the present invention 1,2.
Fig. 3 is the electron beam exposure figure in the embodiment of the present invention 1,2.
Fig. 4 is the mask plate structure figure in the embodiment of the present invention 3,4.
Fig. 5 is the electron beam exposure figure in the embodiment of the present invention 3,4.
Fig. 6 is the resist coating schematic diagram in the embodiment of the present invention 5.
Fig. 7 is the electron beam exposure schematic diagram in the embodiment of the present invention 5.
Fig. 8 is the optical exposure schematic diagram in the embodiment of the present invention 5.
Fig. 9 is the development treatment process schematic representation in the embodiment of the present invention 5.
Figure 10 is the coating film treatment process schematic representation in the embodiment of the present invention 5.
Figure 11 is the stripping technology schematic diagram in the embodiment of the present invention 5.
Figure 12 is the etching processing process schematic representation in the embodiment of the present invention 5.
Figure 13 is the degumming process schematic diagram in the embodiment of the present invention 5.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
The invention provides a kind of method for making of submicron grating, for making the grating higher to lines accuracy requirement, also can be used for making the grating simultaneously containing thick lines and hachure, comprising the steps,
S1, resist coating, post bake;
S2, mask plate is utilized to carry out optical exposure to the core of lines;
S3, employing electron beam exposure, be carved into the core of described lines by line edge details cover by overlay mark;
S4, development, and aftertreatment technology;
S5, to remove photoresist, complete preparing grating;
Or S2, employing electron beam exposure, expose line edge details;
S3, mask plate is utilized to carry out optical exposure to the core of lines;
Or, S2, utilize mask plate to carry out optical exposure to large bargraphs;
S3, employing electron beam exposure, be carved into described large bargraphs inside by overlay mark by little bargraphs cover;
Or S2, employing electron beam exposure, expose little bargraphs;
S3, mask plate is utilized to carry out optical exposure to large bargraphs.
The present invention makes grating by gluing, double exposure, a developing process, and manufacture craft simplifies, and saves time and cost; Meanwhile, because processing step simplifies, avoid repeatedly technique to splice the distortion caused, ensure that the precision of grating lines, improve the performance of device or figure.
Further, photoresist is to optical wavelength and the equal responsive photoresist of electron beam.As I Lithography glue, PMMA, HSQ and ZEP.
To etch two-dimensional grating figure to illustrate on base material, as shown in Figure 1.This figure is a unit in the step grating of two dimension, its concrete size is as follows: A=1um, B=1um, C=200nm, wherein can not more than 50nm to the positive and negative deviation of A/B/C size, in the prior art, as the figure directly adopting optical exposure to shift wherein 1um, then the precision of figure cannot meet the demands, and the following employing embodiment of the present invention 1, embodiment 2 make.
Embodiment 1
S1, painting PMMA photoresist, post bake;
S2, as shown in Figure 2, utilizes mask plate to adopt projection aligner to carry out optical exposure to the core of lines;
S3, employing electron beam exposure, be carved into the core of described lines, complete the transfer of lines details by line edge details cover by overlay mark;
S4, development, and carry out etching processing technique;
S5, to remove photoresist, complete preparing grating.
Embodiment 2
S1, painting SU-8 photoresist, post bake;
S2, employing electron beam exposure, expose line edge details, complete the transfer of lines details;
S3, as shown in Figure 2, utilizes mask plate to adopt projection aligner to carry out optical exposure to the core of lines;
Development after S4, baking, and carry out etching processing technique;
S5, to remove photoresist, complete preparing grating.
In above-mentioned steps, mask plate only comprises the lines core in figure, and wherein mask plate as shown in Figure 2, and the residue detail section of figure and the marginal portion of figure are directly write on figure by electron beam exposure method, effectively can improve the precision of lines.
Further, as shown in Figure 3, in embodiment 1, embodiment 2, the size of size a/b/c/d/e/f the best of edge details is 100nm-200nm, in above-mentioned scope, both can effectively utilize electron beam to realize the precision of lines, fully can improve again the efficiency of exposure, effectively can also avoid the approach effect of electron beam exposure apparatus.
Relate to multiple etching compared to existing technology, pattern precision cannot ensure completely, and the embodiment of the present invention 1, embodiment 2, by adopting electron beam exposure to the edge of pattern, ensure the precision of figure.
During as being 100nm or larger to the accuracy requirement of 1um lines wherein, the following employing embodiment of the present invention 3, embodiment 4 make.
Embodiment 3
S1, painting SU-8 photoresist, post bake;
S2, as shown in Figure 4, utilizes mask plate to adopt projection aligner to carry out optical exposure to large bargraphs;
S3, as shown in Figure 5, adopts electron beam exposure, little bargraphs cover is carved into described large bargraphs inner by overlay mark;
Development after S4, baking, and carry out etching processing technique;
S5, to remove photoresist, complete preparing grating.
Embodiment 4
S1, painting I Lithography glue, post bake;
S2, as shown in Figure 5, adopts electron beam exposure, exposes little bargraphs;
S3, as shown in Figure 4, utilizes mask plate to adopt projection aligner to carry out optical exposure to large bargraphs;
S4, development, and carry out etching processing technique;
S5, to remove photoresist, complete preparing grating.
Embodiment 5
S1, painting I Lithography glue 2, post bake, as shown in Figure 6, substrate 1 also can be target material layer;
S2, employing electron beam exposure, as shown in Figure 7, I Lithography glue 2 is the photoresist 21 that is modified after beam bombardment;
S3, sample is transferred directly to optical exposure machine exposes, as shown in Figure 8, I Lithography glue 2 is the photoresist 22 that is modified after optical exposure;
S4, sample is placed developer solution after, once development can obtain targeted graphical, as shown in Figure 9;
Subsequent technique is plated film, and as shown in Figure 10, the rete 3 of plated film, as Au, SiO2, does not specifically limit the classification of rete, and the type according to designed submicron grating is selected, and performs step S51;
Subsequent technique for etching, as shown in figure 12, first carry out the rear baking of photoresist, improve photoresist shoulder etching power, after by etching machine with dry etching or wet etching, perform step S52;
S51, as shown in figure 11, by stripping technology, obtain targeted graphical;
S52, as shown in figure 13, remove photoresist by organic chemical, obtain targeted graphical.
The present invention only needs gluing, once development just can shift all figures, and need not hard mask of the prior art.
Select thick lines to be wherein used for optical lithography compared to prior art, hachure is used for beamwriter lithography; And the present invention is the width accurately realizing designing lines, it is not only hachure beamwriter lithography, and also beamwriter lithography is adopted for broad-brush edge, because beamwriter lithography accurately can control the precision of lines, therefore can ensure that the profile of whole figure just can be precisely controlled, and then the precision of whole figure can be ensured.
The present invention only adopts a kind of photoresist, and only need once can complete without the need to multiple additional film layer and the technique removing additional film layer, and needs to carry out planarization.
Compared to prior art adopt first by Graphic transitions on additional film layer, then transfer to target layer from additional film layer, two steps etchings have been come, multiple etching process, and cannot ensure 100% transfer of figure, can deform.
In addition, in prior art, additional film layer material is inconsistent, must bring different stress, and in etching process, owing to generating heat, no stress can cause different pattern deformations.
The I Lithography glue that the present invention adopts, to the wavelength sensitive of optical exposure machine, also to electron beam sensitive; After first time exposure, the photoresist modification of institute exposure area, as shown in Figure 5; Now again sample is placed the exposure carrying out other regions in another one litho machine, as shown in Figure 6, after two regions all expose, is more once developed in all exposure areas.
The above the specific embodiment of the present invention, does not form limiting the scope of the present invention.Any various other done by technical conceive of the present invention change and distortion accordingly, all should be included in the protection domain of the claims in the present invention.
Claims (9)
1. a method for making for submicron grating, is characterized in that, comprises the steps,
S1, resist coating, post bake;
S2, mask plate is utilized to carry out optical exposure to the core of lines;
S3, employing electron beam exposure, be carved into the core of described lines by line edge details cover by overlay mark;
S4, development, and aftertreatment technology;
S5, to remove photoresist, complete preparing grating;
Or,
S1, resist coating, post bake;
S2, employing electron beam exposure, expose line edge details;
S3, mask plate is utilized to carry out optical exposure to the core of lines;
S4, development, and aftertreatment technology;
S5, to remove photoresist, complete preparing grating.
2. method for making as claimed in claim 1, is characterized in that, described photoresist is to optical wavelength and the equal responsive photoresist of electron beam.
3. method for making as claimed in claim 1, is characterized in that, described optical exposure adopts Proximity stepper, contact photoetching machine or projection aligner.
4. method for making as claimed in claim 1, it is characterized in that, the line edge details of described electron beam exposure is of a size of 100nm-200nm.
5. method for making as claimed in claim 1, it is characterized in that, described aftertreatment technology is plated film or etching.
6. a method for making for submicron grating, is characterized in that, comprises the steps,
S1, resist coating, post bake;
S2, mask plate is utilized to carry out optical exposure to large bargraphs;
S3, employing electron beam exposure, be carved into described large bargraphs inside by overlay mark by little bargraphs cover;
S4, development, and aftertreatment technology;
S5, to remove photoresist, complete preparing grating;
Or,
S1, resist coating, post bake;
S2, employing electron beam exposure, expose little bargraphs;
S3, mask plate is utilized to carry out optical exposure to large bargraphs;
S4, development, and aftertreatment technology;
S5, to remove photoresist, complete preparing grating.
7. method for making as claimed in claim 6, is characterized in that, described photoresist is to optical wavelength and the equal responsive photoresist of electron beam.
8. method for making as claimed in claim 6, is characterized in that, described optical exposure adopts Proximity stepper, contact photoetching machine or projection aligner.
9. method for making as claimed in claim 6, it is characterized in that, described aftertreatment technology is plated film or etching.
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| CN201410003127.9A CN104765247A (en) | 2014-01-03 | 2014-01-03 | Making method of submicron grating |
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| CN201410003127.9A CN104765247A (en) | 2014-01-03 | 2014-01-03 | Making method of submicron grating |
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| CN104765247A true CN104765247A (en) | 2015-07-08 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110568720A (en) * | 2019-08-27 | 2019-12-13 | 清华大学深圳研究生院 | method for manufacturing micro-polaroid template |
| CN114089457A (en) * | 2021-11-17 | 2022-02-25 | 天津华慧芯科技集团有限公司 | Submicron blazed grating imprinting template prepared by electron beam lithography and method thereof |
| CN116500713A (en) * | 2023-05-05 | 2023-07-28 | 广纳四维(广东)光电科技有限公司 | Two-dimensional grating preparation method and two-dimensional grating |
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| CN103187246A (en) * | 2011-12-31 | 2013-07-03 | 中国科学院微电子研究所 | Manufacturing method for hybrid lines |
| CN103187247A (en) * | 2011-12-31 | 2013-07-03 | 中国科学院微电子研究所 | Manufacturing method for hybrid lines |
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| JPH02188729A (en) * | 1989-01-17 | 1990-07-24 | Sharp Corp | Manufacture of diffraction grating of optical element |
| JP2004078026A (en) * | 2002-08-21 | 2004-03-11 | Konica Minolta Holdings Inc | Electron beam lithography method, manufacturing method of metallic mold for optical element, manufacturing method of optical element, and electron beam lithography apparatus |
| CN103135337A (en) * | 2011-12-01 | 2013-06-05 | 中芯国际集成电路制造(上海)有限公司 | Method and system of exposure of alignment mark |
| CN103187246A (en) * | 2011-12-31 | 2013-07-03 | 中国科学院微电子研究所 | Manufacturing method for hybrid lines |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110568720A (en) * | 2019-08-27 | 2019-12-13 | 清华大学深圳研究生院 | method for manufacturing micro-polaroid template |
| CN110568720B (en) * | 2019-08-27 | 2023-11-17 | 清华大学深圳研究生院 | Manufacturing method of micro-polarizer template |
| CN114089457A (en) * | 2021-11-17 | 2022-02-25 | 天津华慧芯科技集团有限公司 | Submicron blazed grating imprinting template prepared by electron beam lithography and method thereof |
| CN116500713A (en) * | 2023-05-05 | 2023-07-28 | 广纳四维(广东)光电科技有限公司 | Two-dimensional grating preparation method and two-dimensional grating |
| CN116500713B (en) * | 2023-05-05 | 2024-02-09 | 广纳四维(广东)光电科技有限公司 | Two-dimensional grating preparation method and two-dimensional grating |
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