CN102213913A - Methods for enhancing resolution of optical mask and manufacturing high-resolution optical mask - Google Patents
Methods for enhancing resolution of optical mask and manufacturing high-resolution optical mask Download PDFInfo
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- CN102213913A CN102213913A CN 201010145304 CN201010145304A CN102213913A CN 102213913 A CN102213913 A CN 102213913A CN 201010145304 CN201010145304 CN 201010145304 CN 201010145304 A CN201010145304 A CN 201010145304A CN 102213913 A CN102213913 A CN 102213913A
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Abstract
The invention discloses a method for enhancing the resolution of an optical mask. A layer of transparent medium layer is reduced from some specific light transmission regions of the ordinary optical mask; the phase of a light wave passing through the layer of special medium is just opposite to the phase of transmitted light of the neighboring light transmission region; and light of the two regions is changed from addition interference into destructive interference, so the resolution of the optical mask is enhanced. The invention also discloses a method for manufacturing a high-resolution optical mask. The method comprises the following steps of: coating a positive corrosion agent on a chromium plate for melting a quartz substrate; exposing a 180-degree phase adjuster pattern by using an electronic beam direct-writing photoetching system; removing a chromium film which is not covered by the corrosion agent by a wet etching and removing photoresist; recoating the positive corrosion agent by using the etched phase adjuster pattern equal to an exposure wavelength and an exposure thickness; exposing a 0-degree phase pattern region by the electronic beam direct-writing photoetching system and developing; removing the chromium film by wet etching; and removing the photoresist to manufacture the resolution-enhanced optical mask.
Description
Technical field
The present invention relates to micro-nano processing technique field, relate in particular to a kind of method that strengthens optical mask resolution and make the high-resolution optical mask.
Background technology
For making full use of cheapness and industry satisfies the needs of micro-nano processing with the optical exposure means of maturation, how to improve the practical resolution of existing optical exposure system, become the focus of research.The eighties people in early stage are confined to develop on exposure sources, then further step up research the late nineteen eighties and (comprise photoresist exposure contrast enhancement techniques (CEL) aspect resist; Photoresist chemical amplification technology and multilayer resist technology etc.).Arrived the nineties, it is " optical tech revolution " epoch of representative that main direction enters with relevant exposure technique, utilize the light position phase parameter in the control optical exposure process, produce the interference of light effect, the diffraction effect of partial offset restriction optical system resolution is to improve the practical resolution of optical exposure system.
A typical silicon technology comprises 15～20 masks, for some BiCMOS technology, and can be how to 28.Traditional GaAs technology only needs mask layer seldom, but present this number is the trend of rising.The manufacturing accuracy of mask more and more becomes the key factor that influences device performance, present ordinary optical mask can not satisfy the requirement of high resolution lithography technology, therefore on mask, light is modulated, guaranteed that the degree of accuracy of figure and resolution are necessary and feasible by graph transformation.
Summary of the invention
(1) technical matters that will solve
At the shortcoming of ordinary optical mask lack of resolution, a fundamental purpose of the present invention is to provide a kind of method that strengthens optical mask resolution, and another purpose is to provide a kind of method of making the high-resolution optical mask.
(2) technical scheme
For achieving the above object, the technical solution used in the present invention is as follows:
A kind of method that strengthens optical mask resolution, this method is the specific transmission region minimizing layer of transparent dielectric layer at optical mask, the phase place that light wave sees through behind this specific transmission region is opposite with the phase place of adjacent transmission region transmitted light, the transmitted light of this specific transmission region and adjacent transmission region, become destructive interference by original addition interference, offset because the light intensity that original diffraction effect causes superposes, strengthened the resolution of optical mask.
In the such scheme, the described specific transmission region that has reduced the layer of transparent dielectric layer is a phase regulator, the formation of this phase regulator is to erode certain thickness quartz substrate at described specific transmission region, and the degree of depth of corrosion need guarantee that the light that sees through phase regulator can form 180 ° of accurate phase changes.
In the such scheme, the thickness of described phase regulator is
Wherein n is the refractive index of phase adjusted modulator material, and λ is an optical wavelength.
A kind of method of making the high-resolution optical mask comprises:
A, on fused quartz substrate chromium plate, apply positive corrosion-resisting agent;
B, adopt the e-beam direct write lithography system 180 ° of phase regulator figures that expose to, after developing, it is the resist figure of 180 ° of phase regulator figures mutually that generation need be made the position;
C, employing wet corrosion technique are removed the chromium film of not sheltered by resist, and are removed photoresist, and expose the quartz substrate that needs to make the phase regulator part;
D, employing inductive couple plasma dry etching method carve and the phase regulator figure that is equivalent to exposure wavelength thickness;
E, on the mask that carves phase regulator, apply positive corrosion-resisting agent again;
F, directly to write the phase place of exposing to by the automatic aligning Exposure mode of e-beam direct write lithography system again be 0 ° graphics field, develops, and exposes the chromium film in this zone;
G, employing wet corrosion technique are removed the chromium film of not sheltered by resist, and are removed photoresist, and make high-resolution optical mask.
In the such scheme, positive corrosion-resisting agent described in steps A and the E is electron sensitive resist or AZ series resist.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
1, utilizes the method for enhancing optical mask resolution provided by the invention and the method for making this high-resolution optical mask, can improve the resolution of optical mask, thereby improve the resolution of optical lithography, promote the development of microelectronic industry.
2, method provided by the invention has that preparation technology is simple, low cost of manufacture, technology stability are good, make the high advantage of efficient, are very beneficial for extensive promotion and application of the present invention.
Description of drawings
Fig. 1 strengthens the principle schematic of optical mask for resolution;
Fig. 2 is the structural representation of phase regulator;
Fig. 3 is the synoptic diagram that applies positive corrosion-resisting agent on fused quartz substrate chromium plate;
Fig. 4 obtains the synoptic diagram of 180 ° of phase regulator figures for adopting the exposure of e-beam direct write lithography system and developing;
Thereby Fig. 5 exposes the synoptic diagram of the quartz substrate that needs to make the phase regulator part for adopting wet corrosion technique and remove not the chromium film of being sheltered by resist and removing photoresist;
Fig. 6 etches and the synoptic diagram that is equivalent to the phase regulator figure of exposure wavelength thickness for adopting ICP;
Fig. 7 is for to carve the synoptic diagram that applies positive corrosion-resisting agent on the phase regulator quartz substrate chrome mask version again;
Fig. 8 obtains the synoptic diagram that phase place is 0 ° graphics field for directly writing exposure by the automatic aligning Exposure mode of e-beam direct write lithography system and developing;
Thereby Fig. 9 is for adopting wet corrosion technique and remove not the chromium film of being sheltered by resist and removing photoresist and make the synoptic diagram that resolution strengthens optical mask.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
The present invention at first provides a kind of method that strengthens optical mask resolution.
Light itself is comprising phase information in communication process, the light that phase place is identical during two bundle incidents is through behind the medium of different distance, and the phase place of transmitted light can be variant.This characteristic of utilizing light to propagate, some specific transmission region at the ordinary optical mask increases or reduces the layer of transparent dielectric layer, the phase place that light wave sees through this layer special media phase place with the transmitted light of adjacent photic zone just is opposite, the light in these two zones has become destructive interference by original addition interference.Destructive interference has been offset because original because that diffraction effect causes but be to wish the light intensity stack avoided, thereby has improved the resolution of optical mask.
Fig. 1 is the basic principle schematic that resolution strengthens optical mask, this figure clearly shows, the adjacent transmission region of ordinary optical mask is because diffraction of light, originally should not exposed areas also there be sizable energy, the photoresist here receives luminous energy, must display during development, and strengthen optical mask for resolution, the 0 grade of light that is comprising most of energy is not affected, and the adjacent part secondary light that plays diffracting effect is because phase place is opposite, cancel each other during stack, the figure light and shade zone of having avoided diffraction effect to cause is fuzzy.Resolution proposed by the invention strengthens optical mask and has strengthened image contrast just by this method, has improved resolution.
Seeing through the light of phase regulator and the phase differential between the normal light wave can express with following formula:
Wherein: d---phase regulator thickness; N---the refractive index of phase shift material; λ---optical wavelength.
When the light that sees through phase regulator was 180 ° with the light phase difference that directly sees through from hyaline layer, the effect of destructive interference was best, so the thickness of phase regulator should make luminous energy produce 180 ° phase place deflection.Can be pushed away by following formula, during θ=180 °, the thickness of phase regulator is:
Strengthen in the optical mask in resolution of the present invention, the formation of phase regulator need be fallen certain thickness quartz substrate at the phase regulator zonal corrosion, and the degree of depth of corrosion should guarantee that the light that sees through phase regulator can form 180 ° of accurate phase changes.Fig. 2 is the structural representation of phase regulator.
The present invention also provides a kind of method of making the high-resolution optical mask, and this method comprises:
A, apply positive corrosion-resisting agent on fused quartz substrate chromium plate, this positive corrosion-resisting agent is electron sensitive resist or AZ series resist;
B, adopt the e-beam direct write lithography system 180 ° of phase regulator figures that expose to, after developing, it is the resist figure of 180 ° of phase regulator figures mutually that generation need be made the position;
C, employing wet corrosion technique are removed the chromium film of not sheltered by resist, remove photoresist, and expose the quartz substrate that needs to make the phase regulator part;
D, employing inductive couple plasma dry etching (ICP) method carve and the phase regulator figure that is equivalent to exposure wavelength thickness;
E, apply positive corrosion-resisting agent again on the mask that carves phase regulator, this positive corrosion-resisting agent is electron sensitive resist or AZ series resist;
F, directly to write the phase place of exposing to by the automatic aligning Exposure mode of e-beam direct write lithography system again be 0 ° graphics field, develops, and exposes the chromium film in this zone;
G, employing wet corrosion technique are removed the chromium film of not sheltered by resist, remove photoresist, and make resolution and strengthen optical mask.
Apply the corresponding technological process of positive corrosion-resisting agent as shown in Figure 3 on fused quartz substrate chromium plate with above-mentioned steps A is described, Fig. 3 is the synoptic diagram that applies positive corrosion-resisting agent on fused quartz substrate chromium plate.1 is transparent mask substrates such as fused quartz among Fig. 3,2 is crome metal membraneous material layer, 3 positive type resist layers for coating comprise single or multiple lift positivity optics resists such as PMMA, ZEP520, ZEP7000, KRS, UV-III, P single or multiple lifts such as (SI-CMS) resist positive electronic corrosion-resistant and AZ9918, AZ9912, AZ5214.
With the described employing e-beam direct write lithography of above-mentioned steps B system expose to 180 ° of phase regulator figures and after developing generation need make the position be mutually the corresponding technological process of the resist figure of 180 ° of phase regulator figures as shown in Figure 4, Fig. 4 obtains the synoptic diagram of 180 ° of phase regulator figures for adopting the exposure of e-beam direct write lithography system and developing.1 is transparent mask substrate such as fused quartz among Fig. 4, and 2 is crome metal membraneous material layer, and 3 for exposure with the positive corrosion-resisting agent layer pattern that obtains after developing.JBX-5000LS or JBX-6300FS electron-beam lithography system that e-beam direct write lithography system described in the step B can adopt JEOL company to produce, its accelerating potential is respectively 50KeV and 100KeV, and electronic beam current is less than or equal to 1nA.
Remove not the chromium film of being sheltered by resist with the described employing wet corrosion technique of above-mentioned steps C and remove photoresist and expose the corresponding technological process of the quartz substrate that needs to make the phase regulator part as shown in Figure 5, thereby Fig. 5 exposes the synoptic diagram of the quartz substrate that needs to make the phase regulator part for adopting wet corrosion technique and remove not the chromium film of being sheltered by resist and removing photoresist.1 is transparent mask substrate such as fused quartz among Fig. 5,5 graphical crome metal thin layers for obtaining after the corrosion.
With the described employing inductive couple plasma of above-mentioned steps D dry etching (ICP) method carve with the corresponding technological process of the phase regulator figure that is equivalent to exposure wavelength thickness as shown in Figure 6, Fig. 6 etches and the synoptic diagram that is equivalent to the phase regulator figure of exposure wavelength thickness for adopting ICP.1 is transparent mask substrate such as fused quartz among Fig. 6,5 graphical crome metal thin layers for obtaining after the corrosion, and 6 are the i.e. 180 ° of phase regulators of the transparent mask substrate region that hollowed out through wet etching.
Again apply the corresponding technological process of positive corrosion-resisting agent as shown in Figure 7 on the mask that carves phase regulator with above-mentioned steps E is described, Fig. 7 is for to carve the synoptic diagram that applies positive corrosion-resisting agent on the phase regulator quartz substrate chrome mask version again.1 is transparent mask substrates such as fused quartz among Fig. 7,5 is the graphical crome metal thin layer that obtains after the corrosion, 7 positive type resist layers for coating comprise single or multiple lift positivity optics resists such as PMMA, ZEP520, ZEP7000, KRS, UV-III, P single or multiple lifts such as (SI-CMS) resist positive electronic corrosion-resistant and AZ9918, AZ9912, AZ5214.
Described directly to write the phase place of exposing to be 0 ° graphics field and expose the corresponding technological process of chromium film in this zone as shown in Figure 8 after developing by the automatic aligning Exposure mode of e-beam direct write lithography system again with above-mentioned steps F, and Fig. 8 obtains the synoptic diagram that phase place is 0 ° graphics field for directly writing exposure by the automatic aligning Exposure mode of e-beam direct write lithography system and developing.1 is transparent mask substrates such as fused quartz among Fig. 8,5 is the graphical crome metal thin layer that obtains after the corrosion, 8 positive corrosion-resisting agent figures for obtaining behind the exposure imaging for the second time, 9 zones that are developed for the positive corrosion-resisting agent figure are to be used for the etching technics of step G.
Remove not the chromium film of being sheltered by resist with the described employing wet corrosion technique of above-mentioned steps G and remove photoresist and make resolution and strengthen the corresponding technological process of optical mask as shown in Figure 9, thereby Fig. 9 is for for adopting wet corrosion technique to remove not the chromium film of being sheltered by resist and remove photoresist and make the synoptic diagram that resolution strengthens optical mask.1 is transparent mask substrate such as fused quartz among Fig. 9, and 6 is 180 ° of phase regulators, and 10 for resolution strengthens the chrome mask layers of optical mask, and 11 is 0 ° of phase region.In among Fig. 91,6,10,11 constituted resolution together and strengthened optical mask.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (5)
1. method that strengthens optical mask resolution, it is characterized in that, this method is the specific transmission region minimizing layer of transparent dielectric layer at optical mask, the phase place that light wave sees through behind this specific transmission region is opposite with the phase place of adjacent transmission region transmitted light, the transmitted light of this specific transmission region and adjacent transmission region, become destructive interference by original addition interference, offset, strengthened the resolution of optical mask because the light intensity that original diffraction effect causes superposes.
2. the method for enhancing optical mask resolution according to claim 1, it is characterized in that, the described specific transmission region that has reduced the layer of transparent dielectric layer is a phase regulator, the formation of this phase regulator is to erode certain thickness quartz substrate at described specific transmission region, and the degree of depth of corrosion need guarantee that the light that sees through phase regulator can form 180 ° of accurate phase changes.
3. the method for enhancing optical mask resolution according to claim 2 is characterized in that the thickness of described phase regulator is
Wherein n is the refractive index of phase adjusted modulator material, and λ is an optical wavelength.
4. a method of making the high-resolution optical mask is characterized in that, comprising:
A, on fused quartz substrate chromium plate, apply positive corrosion-resisting agent;
B, adopt the e-beam direct write lithography system 180 ° of phase regulator figures that expose to, after developing, it is the resist figure of 180 ° of phase regulator figures mutually that generation need be made the position;
C, employing wet corrosion technique are removed the chromium film of not sheltered by resist, and are removed photoresist, and expose the quartz substrate that needs to make the phase regulator part;
D, employing inductive couple plasma dry etching method carve and the phase regulator figure that is equivalent to exposure wavelength thickness;
E, on the mask that carves phase regulator, apply positive corrosion-resisting agent again;
F, directly to write the phase place of exposing to by the automatic aligning Exposure mode of e-beam direct write lithography system again be 0 ° graphics field, develops, and exposes the chromium film in this zone;
G, employing wet corrosion technique are removed the chromium film of not sheltered by resist, and are removed photoresist, and make high-resolution optical mask.
5. the method for manufacturing high-resolution optical mask according to claim 4 is characterized in that, positive corrosion-resisting agent described in steps A and the E is electron sensitive resist or AZ series resist.
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| CN 201010145304 CN102213913A (en) | 2010-04-09 | 2010-04-09 | Methods for enhancing resolution of optical mask and manufacturing high-resolution optical mask |
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| CN 201010145304 CN102213913A (en) | 2010-04-09 | 2010-04-09 | Methods for enhancing resolution of optical mask and manufacturing high-resolution optical mask |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104199209A (en) * | 2014-07-28 | 2014-12-10 | 京东方科技集团股份有限公司 | Mask plate, manufacturing method thereof and manufacturing method of target graph |
| CN110676156A (en) * | 2019-10-21 | 2020-01-10 | 昆山百利合电子材料有限公司 | Photoetching semiconductor processing technology |
| CN111007694A (en) * | 2019-12-24 | 2020-04-14 | 无锡中微掩模电子有限公司 | Method for manufacturing phase shift mask for integrated circuit |
| WO2023214197A1 (en) * | 2022-05-02 | 2023-11-09 | 刘正锋 | Method and device for increasing resolving power of optical instrument by applying new theory of optics |
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| CN1854893A (en) * | 2005-04-15 | 2006-11-01 | 三星电子株式会社 | Photomask |
| JP2007079101A (en) * | 2005-09-14 | 2007-03-29 | Toppan Printing Co Ltd | Phase shift mask, and method for manufacturing semiconductor integrated circuit |
| CN101261440A (en) * | 2006-03-10 | 2008-09-10 | 信越化学工业株式会社 | Photomask substrate and photomask |
| CN101281360A (en) * | 2007-04-02 | 2008-10-08 | 台湾积体电路制造股份有限公司 | Method for manufacturing mask |
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2010
- 2010-04-09 CN CN 201010145304 patent/CN102213913A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1603949A (en) * | 2003-09-30 | 2005-04-06 | 株式会社瑞萨科技 | Photomask, photomask manufacturing method and semiconductor device manufacturing method using photomask |
| CN1854893A (en) * | 2005-04-15 | 2006-11-01 | 三星电子株式会社 | Photomask |
| JP2007079101A (en) * | 2005-09-14 | 2007-03-29 | Toppan Printing Co Ltd | Phase shift mask, and method for manufacturing semiconductor integrated circuit |
| CN101261440A (en) * | 2006-03-10 | 2008-09-10 | 信越化学工业株式会社 | Photomask substrate and photomask |
| CN101281360A (en) * | 2007-04-02 | 2008-10-08 | 台湾积体电路制造股份有限公司 | Method for manufacturing mask |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104199209A (en) * | 2014-07-28 | 2014-12-10 | 京东方科技集团股份有限公司 | Mask plate, manufacturing method thereof and manufacturing method of target graph |
| CN110676156A (en) * | 2019-10-21 | 2020-01-10 | 昆山百利合电子材料有限公司 | Photoetching semiconductor processing technology |
| CN111007694A (en) * | 2019-12-24 | 2020-04-14 | 无锡中微掩模电子有限公司 | Method for manufacturing phase shift mask for integrated circuit |
| WO2023214197A1 (en) * | 2022-05-02 | 2023-11-09 | 刘正锋 | Method and device for increasing resolving power of optical instrument by applying new theory of optics |
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Application publication date: 20111012 |