CN104538514B - Flip LED chips structure and preparation method thereof - Google Patents
Flip LED chips structure and preparation method thereof Download PDFInfo
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- CN104538514B CN104538514B CN201410856042.5A CN201410856042A CN104538514B CN 104538514 B CN104538514 B CN 104538514B CN 201410856042 A CN201410856042 A CN 201410856042A CN 104538514 B CN104538514 B CN 104538514B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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Abstract
The present invention provides a kind of flip LED chips structure, using two-sided patterned substrate, the microlens array acted on optically focused is set on described two relative surfaces of two-sided patterned substrate, so as on the premise of LED epitaxial layer crystal mass is not influenceed, improve the luminosity and axial luminosity of flip LED chips.The present invention provides a kind of flip LED chips construction manufacturing method, the first microlens structure of array arrangement is produced on the first surface of substrate, it is follow-up in conjunction with substrate first surface the characteristics of the first microlens structure of array arrangement, photoetching self-registered technology is realized by the way that LED chip itself is luminous, the making of substrate second surface mask layer is realized on the premise of without mask plate and contraposition, the graphical of substrate second surface is finally realized by etching technics again, to form the second microlens structure of array arrangement on substrate second surface, the flip LED chips with two-sided patterned substrate are completed to make.
Description
Technical field
The invention belongs to semiconductor optoelectronic chip manufacturing field, more particularly to a kind of flip LED chips structure and its making
Method.
Background technology
GaN base LED is since early 1990s are commercialized, and by the development of twenties years, its structure tended to
It is ripe and perfect, it disclosure satisfy that demand of the people at this stage to decorative lamp；But to replace conventional light source to enter illumination completely
Field, the raising of luminosity is the endless pursuit of LED industry researcher.(approached in internal quantum efficiency
100%) on the premise of the space that can improve is limited, sight has been turned to external quantum efficiency by the researcher of LED industry, is proposed
Can improve the multiple technologies scheme and method of light extraction efficiency, for example patterned substrate technology, side wall coarsening technique, DBR technologies,
Optimize electrode structure, 2 D photon crystal etc. is made on substrate or nesa coating.Wherein patterned substrate most effect, especially
Since it is 2010, under the excitation and promotion of the various policies of government, the either dry method patterned substrate skill of cone structure
The wet method pattern substrate technology of art or Pyramid is obtained for development at full speed, and its technique is highly developed, and
Flat substrate was instead of completely in 2012, and the main flow substrate as LED chip makes LED crystal structure and luminosity all obtain
Revolutionary raising is arrived.
From structure, LED chip has point of LED chip and flip LED chips, for positive cartridge chip, graphically
Substrate technology is will to be reflected back using PSS figures from the light of luminous zone directive substrate by different faces, and the effusion for improving light is general
Rate, improves the light extraction efficiency of chip.But, for flip-chip, avoid the need for reflecting light back into, but need to the greatest extent may be used
Light transmission more than energy passes through substrate.
Compared to LED chip, flip-chip can solve to radiate difficulty the problem of, the indigo plant that commercialized LED chip grows mostly
On jewel substrate, then it is fixed on the package support, such LED chip is mainly by heat loss through conduction, and sapphire is served as a contrast
Bottom is due to thicker, so heat is difficult to export, and heat, which is gathered in chip, can influence chip reliability, increase light decay and reduces chip
Life-span；The problem of light efficiency is low, electrode is in the light, and can reduce the light extraction of chip；Current crowding can increase the voltage of chip, and these all can
Reduce the light efficiency of chip；The problem of encapsulation is complicated, the voltage of single led chip is 3V or so, it is therefore desirable to which transformation will envelope
Dress is connected, each of which increases the difficulty of encapsulation and application, and technology difficulty is increased, and makes the less reliable of whole chip.
The inverted structure for having as many as such advantage will can greatly improve the most promising of LED luminosity as future
GaN base LED structure, but the LED chip of inverted structure is in N faces light extraction, on the one hand because sapphire refractive index is low
In the refractive index of gallium nitride, so the light that epitaxial layer is shot out can be totally reflected on sapphire and substrate interface, cause compared with
Many light can not come out, and reduce light extraction efficiency；On the other hand due to the presence of growth substrates surfacial pattern, in substrate and epitaxial layer
Interface at more light will be made from the reverse P faces in N faces, further to have impact on the light extraction efficiency of flip LED chips, such as again
Fruit flip-chip will then have a strong impact on the crystal mass of epitaxial layer without using patterned substrate, but with flat substrate.
The content of the invention
It is an object of the invention to provide a kind of flip LED chips structure and preparation method thereof, LED epitaxial layers are not being influenceed
On the premise of crystal mass, the luminosity of flip LED chips is improved.
In order to solve the above problems, the present invention provides a kind of flip LED chips structure, including：
Substrate with relative first surface and second surface, is formed at array arrangement on the first surface of the substrate
The first microlens structure, be formed at the second microlens structure of array arrangement on the second surface of the substrate, described first
Microlens structure and the second microlens structure are symmetrical on the substrate；
The epitaxial layer on the first surface is formed at, the epitaxial layer includes N-type epitaxy layer, the active layer sequentially formed
With p-type epitaxial layer；
It is formed in the epitaxial layer and exposes the groove of the N-type epitaxy layer；
It is formed at the side wall protective layer on the side wall of the groove；
The P electrode on the p-type epitaxial layer is formed at, the N electrode in the groove is formed at；
Flip LED substrate, including multiple first substrates being spaced apart and second substrate and described for being dielectrically separated from
First substrate and second substrate are dielectrically separated from plate, and first substrate is electrically connected with positive wire, second substrate with a negative pole
Lead electrically connect, the first substrate correspond to the P electrode, the second substrate correspond to the N electrode, the insulation every
The gap inserted from plate between the P electrode and N electrode.
Optionally, in described flip LED chips structure, the substrate is Sapphire Substrate or silicon carbide substrates.
Optionally, in described flip LED chips structure, first microlens structure and the second microlens structure
Shape and size are identical.
Optionally, in described flip LED chips structure, first microlens structure and the second microlens structure are equal
For dome-type or semielliptical type structure.
The present invention also provides a kind of preparation method of flip LED chips structure, including：
There is provided and be formed with battle array on a substrate with relative first surface and second surface, the first surface of the substrate
Arrange the first microlens structure of arrangement；
Form epitaxial layer on the first surface of the substrate, N-type epitaxy layer that the epitaxial layer includes sequentially forming, have
Active layer and p-type epitaxial layer；
The groove of multiple exposures N-type epitaxy layer, and the shape on the side wall of the groove are formed in the epitaxial layer
Into side wall protective layer；
P electrode is formed on the p-type epitaxial layer, N electrode is formed in the groove, to form LED chip；
A flip LED substrate is provided, the flip LED substrate includes multiple first substrates being spaced apart and the second base
Plate, the first substrate and second substrate are dielectrically separated from by being dielectrically separated from plate, and the first substrate is electrically connected with positive wire
Connect, the second substrate is electrically connected with a negative wire；
By the LED chip face-down bonding on the flip LED substrate, the first substrate corresponds to the P electrode,
The second substrate corresponds to the N electrode, described to be dielectrically separated from the gap that plate is inserted between the P electrode and N electrode；
Photoresist layer is formed on the second surface of the substrate, and by the positive wire and negative wire to described
LED chip, which is powered, makes the LED chip light, so that maskless lithography and developing process are carried out to the photoresist layer, in lining
Graphical photoresist is formed on the second surface at bottom；
Baking is carried out to the graphical photoresist and forms mask layer；And
The substrate is etched to form the second microlens structure of array arrangement, described first on the second surface of substrate
Microlens structure and the second microlens structure are symmetrical on the substrate.
Optionally, in the preparation method of described flip LED chips structure, the substrate is Sapphire Substrate or carborundum
Substrate.
Optionally, in the preparation method of described flip LED chips structure, first microlens structure and second micro-
The shape and size of mirror structure are identical.
Optionally, in the preparation method of described flip LED chips structure, first microlens structure and second micro-
Mirror structure is dome-type or semielliptical type structure.
Optionally, in the preparation method of described flip LED chips structure, the graphical photoresist is cylindrical photoetching
Jiao Tai.
Optionally, in the preparation method of described flip LED chips structure, the figure of the mask layer is spherical crown shape.
Compared with prior art, the present invention provides a kind of flip LED chips structure, and the flip LED chips are using two-sided
The microlens array acted on optically focused is set on patterned substrate, described two-sided two relative surfaces of patterned substrate, from
And on the premise of LED epitaxial layer crystal mass is not influenceed, improve the luminosity and axial luminosity of flip LED chips.
In the flip LED chips construction manufacturing method of the present invention, the first of array arrangement is produced on the first surface of substrate first
Microlens structure, subsequently in conjunction with the characteristics of the first microlens structure of array arrangement, passing through LED chip on substrate first surface
Itself lights and realizes photoetching self-registered technology, so as on the premise of without mask plate and contraposition, realize that substrate second surface is covered
The making of film layer, then the graphical of substrate second surface is realized by etching technics, to form array on substrate second surface
Second microlens structure of arrangement, completes the flip LED chips with two-sided patterned substrate and makes.
Brief description of the drawings
Referring to the drawings, according to following detailed description, the present invention can be more clearly understood from.For the sake of clarity, scheme
In the relative thickness of each layer and the relative size of given zone be not drawn to draw.In the accompanying drawings：
Fig. 1~12 are the diagrammatic cross-sections during flip LED chips structure fabrication in the embodiment of the present invention；
Figure 13 is the schematic flow sheet of flip LED chips construction manufacturing method in the embodiment of the present invention.
Embodiment
In research the problem of being mentioned for background technology, inventors herein have recognized that, it is necessary to according to upside-down mounting core
The particularity of piece, two-sided patterned substrate structure is used for the making of flip LED chips, this can not influence LED epitaxial layers
On the premise of crystal mass, the reflection from the light of epitaxial layer directive substrate is reduced, increases its transmission, light extraction efficiency is improved and luminous
Brightness.If it has furthermore been found that being the microlens array structure with optically focused effect by graphic designs, will further improve upside-down mounting
The axial luminosity of LED chip.
It is specific as shown in figure 13, with reference to Fig. 1 to Figure 12, a kind of flip LED chips structure, including：
Substrate 10 with relative first surface and second surface；
It is formed at the first microlens structure 11 of array arrangement on the first surface and is formed at the second surface
Second microlens structure 12 of upper array arrangement, the shape and chi of the microlens structure 12 of the first microlens structure 11 and second
It is very little identical, and the microlens structure 12 of first microlens structure 11 and second is symmetrical on the substrate 10；
It is formed at the epitaxial layer on the first surface, it is N-type epitaxy layer 21 that the epitaxial layer includes sequentially forming, active
Layer 22 and p-type epitaxial layer 23；
It is formed in the epitaxial layer and exposes the groove 30 of the N-type epitaxy layer 21 and be formed at the groove 30
Side wall protective layer 40 on the wall of side；
The P electrode 51 being formed on p-type epitaxial layer 23 and the N electrode 52 being formed in groove 30, the P electrode 51 with
There is a gap between N electrode 52；
Flip LED substrate 60, including multiple first substrates 61 being spaced apart and second substrate 62 and for insulate every
Plate 63 is dielectrically separated from from the first substrate 61 and second substrate 62, multiple first substrates 61 are electrically connected with positive wire,
Multiple second substrates 62 are electrically connected with negative wire, and the first substrate 61 corresponds to the P electrode 51, the second substrate
62 correspond to the N electrode 52, the gap being dielectrically separated between the insertion P electrode 51 of plate 63 and N electrode 52.
The microlens structure 12 of first microlens structure 11 and second refers to the dome-type or half ellipse acted on optically focused
Ball shape structure, the flip LED chips use two-sided patterned substrate, and two relative surfaces of the two-sided patterned substrate
It is upper that the microlens array acted on optically focused is set, so as on the premise of LED epitaxial layer crystal mass is not influenceed, improve upside-down mounting
The luminosity of LED chip and axial luminosity.
Wherein, second microlens structure and the first microlens structure are symmetrical centered on substrate 10, i.e., and second
The line at the center of microlens structure and the center of the first microlens structure can further improve flip LED perpendicular to substrate 10
The luminosity of chip.
The present invention also provides a kind of preparation method of flip LED chips structure, including：
S1：There is provided one has formation on the substrate of relative first surface and second surface, the first surface of the substrate
There is the first microlens structure of array arrangement；
S2：Epitaxial layer is formed on the first surface of the substrate, the epitaxial layer includes the N-type extension sequentially formed
Layer, active layer and p-type epitaxial layer；
S3：The groove of multiple exposures N-type epitaxy layer is formed in the epitaxial layer, and on the side wall of the groove
Form side wall protective layer；
S4：P electrode is formed on the p-type epitaxial layer, N electrode is formed in the groove, to complete the system of LED chip
Make；
S5：A flip LED substrate is provided, the flip LED substrate includes multiple first substrates being spaced apart and second
Substrate, the first substrate and second substrate are dielectrically separated from by being dielectrically separated from plate, and multiple first substrates are electric with positive wire
Connection, multiple second substrates are electrically connected with a negative wire；
S6：By the LED chip face-down bonding on the flip LED substrate, the first substrate corresponds to P electricity
Pole, the second substrate corresponds to the N electrode；
S7：Photoresist layer is formed on the second surface of the substrate, and passes through the positive wire and negative wire pair
The LED chip, which is powered, makes the LED chip light, so that maskless lithography and developing process are carried out to the photoresist layer,
Graphical photoresist is formed on the second surface of substrate；
S8：Baking is carried out to the graphical photoresist and forms mask layer；
S9：The substrate is etched to form the second microlens structure of array arrangement on the second surface of substrate, it is described
The shape and size of first microlens structure and the second microlens structure are identical, and first microlens structure and second micro-
Mirror structure is symmetrical on the substrate.
Preparation method below in conjunction with 1~12 pair of flip LED chips proposed by the present invention of accompanying drawing is described in further detail.
As shown in figure 1, in step sl there is provided a flat substrate 10, the substrate 10 includes relative first surface
And second surface, the first microlens structure 11 of array arrangement is formed with the first surface of the substrate 10.The substrate 10
Preferably Sapphire Substrate, certainly, according to specific needs, the substrate 10 can also be other types substrate, such as carborundum
Substrate.
In the present embodiment, the first microlens structure 11 of array arrangement can be formed in the following way：First, in substrate
Photoresist layer is formed on 10 first surface；Then, graphical photoresist, the figure are produced by exposed and developed technique
Change photoresist to be made up of some cylindrical light photoresist platforms, each cylindrical light photoresist platform is parallel to the first surface of substrate 10 and the
The section of two surface directions is circle, is square perpendicular to the first surface of substrate 10 and the section in second surface direction.Then,
Baking is carried out to the graphical photoresist and forms mask layer, cylindrical light photoresist platform is turned into spherical crown shape photoresist.Understand, circle
Cylindricality photoresist platform is under the glass transition temperature higher than photoresist, such as in the range of temperature is 120 DEG C~250 DEG C, by
Turn into spherical crown shape photoresist in the effect of surface tension, the spherical crown shape photoresist refers to dome-type or semielliptical type structure, i.e.
Spherical crown shape photoresist is circle parallel to the first surface of substrate 10 and second surface direction section, perpendicular to the first of substrate 10
Surface and second surface direction section are semicircle or half elliptic；Next, using the mask layer as mask, performing sensing coupling
Plasma etch process is closed, until the spherical crown shape photoresist is etched completely away, so that on the first surface of substrate 10
Multiple first microlens structures 11 are formed, first microlens structure 11 refers to the dome-type or semielliptical acted on optically focused
Type structure.
As shown in Fig. 2 in step s 2, forming epitaxial layer, the epitaxial layer bag on the first surface of the substrate 10
Include the N-type epitaxy layer 21 being sequentially formed on the first surface of substrate 10, active layer 22 and p-type epitaxial layer 23.
As shown in Figure 3 and Figure 4, in step s3, by photoetching and etching technics in multiple fates of the epitaxial layer
Multiple grooves 30 are formed in domain one, the groove 30 exposes the N-type epitaxy layer 21.Further, the p-type in the groove 30
Epitaxial layer 23 and active layer 22 are removed completely, and N-type epitaxy layer 21 is removed a part.Pass through deposition, photoetching, etching work again
Skill is formed in side wall protective layer 40, preferred scheme on the side wall of groove 30, and the side wall protective layer 40 extends to p-type epitaxial layer
23 edge.The material of the side wall protective layer 40 is, for example, silica.
As shown in figure 5, in step s 4, P is formed on the p-type epitaxial layer 23 by evaporation, sputtering or spraying coating process
Electrode 51, forms N electrode 52 in the groove 30, has gap between the P electrode 51 and N electrode 52, to complete LED core
The making of piece.It is preferred that, expansion electrode, the expansion electrode can also be formed between the P electrode 51 and p-type epitaxial layer 23
Material be ITO.The material of the P electrode 51 and N electrode 52 is the one or more in chromium, titanium, aluminium, nickel, silver, gold.
As shown in fig. 6, in step s 5 there is provided a flip LED substrate 60, the flip LED substrate 60 includes multiple
Every the first substrate 61 and second substrate 62 of distribution, the first substrate 61 and second substrate 62 are insulated by being dielectrically separated from plate 63
Isolation, multiple first substrates 61 are electrically connected with positive wire, and multiple second substrates 62 are electrically connected with a negative wire.
As shown in fig. 7, in step s 6, it is described by the LED chip face-down bonding on the flip LED substrate 60
First substrate 61 corresponds to the P electrode 51, and the second substrate 62 corresponds to the N electrode 52.In preferred version, such as Fig. 8
It is shown, the substrate 10 is thinned to reduce device volume.
As shown in Figure 9 and Figure 10, in the step s 7, photoresist layer 71 is formed on the second surface of the substrate 10, and
LED chip is powered by the positive wire and negative wire and then the LED chip is lighted, so as to the photoresist
Layer 71 carries out maskless lithography and developing process, i.e. do not need mask plate, directly luminous to photoresist layer 71 using LED chip
Exposure, due to having the first microlens structure 11 of array arrangement on the first surface of substrate 10 so that light reaches photoresist
Layer 71 passes through longer compared to other positions light distance at distance difference, the first microlens structure 11, and light absorbs are fallen, and arrive
Most short up to the second photoresist light distance between the first microlens structure, photoresist is all developed, because light is being situated between
In matter by when, luminous energy due to absorb to decay, attenuation is relevant with absorption coefficient and medium length, and collimated light beam is initial
When the same, different due to the have passed through medium distance of energy everywhere, remaining luminous energy is just otherwise varied, correspondence first in the present invention
Light at microlens structure, which is absorbed, to be over, and the light of remaining position can then make photoresist react, therefore, control can be passed through
The luminous luminous photoresist for causing position relative with the first microlens structure on second surface of LED chip is not exposed, and
Then being exposed for the photoresist of other positions, can be corresponding according to the size of the first microlens structure and the thickness of photoresist layer 71
Adjust exposure energy.Then, graphical photoresist 72 is formed on the second surface of substrate 10 by developing process.Specifically
Say, after developing process, original will be retained in all or part of the photoresist of the first microlens structure correspondence position
Removal is dissolved by the developing after place, the photo resist photosensitive of other positions.In the present embodiment, the graphical photoresist 72 is cylinder
The photoresist platform of shape or subcylindrical.
As shown in figure 11, in step s 8, baking is carried out to the graphical photoresist 72 and forms mask layer 73, make cylinder
Shape photoresist platform turns into spherical crown shape photoresist, and cylindrical light photoresist platform is under the glass transition temperature higher than photoresist, due to table
The effect of face tension force turns into spherical crown shape or the photoresist close to spherical crown shape.In fact, the present invention does not limit graphical photoresist
72 and the shape of mask layer 73, as long as patterned photoresist is through overbaking and available second microlens structure of etching
Can.
As shown in figure 12, in step s 9, it is mask with the mask layer 73, by etching technics the second of substrate 10
The second microlens structure 12 of array arrangement is formed on surface.Specifically, it is mask with the mask layer 73, performs sensing coupling
Plasma etch process is closed, until the mask layer 73 is etched completely away, so as to be formed on the second surface of substrate 10
Multiple second microlens structures 12.Second microlens structure 12 is dome-type or semielliptical type structure.Second lenticule knot
Structure 12 and the first microlens structure 11 are symmetrical centered on substrate, i.e. the center of the second microlens structure 12 and first micro-
The line at the center of lens arrangement 11 is perpendicular to substrate 10.
The present invention produces the first microlens structure of array arrangement on the first surface of substrate, subsequently in conjunction with substrate
It is luminous by LED chip itself on first surface the characteristics of the first microlens structure of array arrangement, realize photoetching autoregistration work
Skill, so as on the premise of without mask plate and contraposition, realize the making of substrate second surface mask layer, finally passes through etching again
Technique forms the second microlens structure of array arrangement on substrate second surface, provided by the present invention with two-sided to be formed
Patterned flip LED chips structure, technique is simple, workable, suitable for large-scale commercial production, meets flip LED
The road of chip future development.
Although the present invention is described in detail by exemplary embodiment, those skilled in the art should
The understanding, exemplary embodiment above are merely to illustrate, the scope being not intended to be limiting of the invention.The skill of this area
Art personnel to above example it should be understood that can modify without departing from the scope and spirit of the present invention.This hair
Bright scope is defined by the following claims.
Claims (10)
1. a kind of flip LED chips structure, it is characterised in that including：
Substrate with relative first surface and second surface, is formed at of array arrangement on the first surface of the substrate
One microlens structure, is formed at the second microlens structure of array arrangement on the second surface of the substrate, and described first is micro-
Mirror structure and the second microlens structure are symmetrical on the substrate；
The epitaxial layer on the first surface is formed at, the epitaxial layer includes N-type epitaxy layer, active layer and the P sequentially formed
Type epitaxial layer；
It is formed in the epitaxial layer and exposes the groove of the N-type epitaxy layer；
It is formed at the side wall protective layer on the side wall of the groove；
The P electrode on the p-type epitaxial layer is formed at, the N electrode in the groove is formed at；
Flip LED substrate, including multiple first substrates being spaced apart and second substrate and for being dielectrically separated from described first
Substrate and second substrate are dielectrically separated from plate, and first substrate is electrically connected with positive wire, second substrate with a negative wire
Electrical connection, the first substrate corresponds to the P electrode, and the second substrate corresponds to the N electrode, described to be dielectrically separated from plate
The gap inserted between the P electrode and N electrode.
2. flip LED chips structure as claimed in claim 1, it is characterised in that the substrate is Sapphire Substrate or carbonization
Silicon substrate.
3. flip LED chips structure as claimed in claim 1, it is characterised in that first microlens structure and second micro-
The shape and size of lens arrangement are identical.
4. flip LED chips structure as claimed in claim 1, it is characterised in that first microlens structure and second micro-
Lens arrangement is dome-type or semielliptical type structure.
5. a kind of preparation method of flip LED chips structure, it is characterised in that including：
There is provided and array row is formed with a substrate with relative first surface and second surface, the first surface of the substrate
First microlens structure of cloth；
Epitaxial layer is formed on the first surface of the substrate, the epitaxial layer includes N-type epitaxy layer, the active layer sequentially formed
With p-type epitaxial layer；
The groove of multiple exposures N-type epitaxy layer is formed in the epitaxial layer, and side is formed on the side wall of the groove
Wall protective layer；
P electrode is formed on the p-type epitaxial layer, N electrode is formed in the groove, to form LED chip；
A flip LED substrate is provided, the flip LED substrate includes multiple first substrates and second substrate being spaced apart, institute
State first substrate and second substrate to be dielectrically separated from by being dielectrically separated from plate, the first substrate is electrically connected with positive wire, institute
Second substrate is stated to electrically connect with a negative wire；
By the LED chip face-down bonding on the flip LED substrate, the first substrate corresponds to the P electrode, described
Second substrate corresponds to the N electrode, described to be dielectrically separated from the gap that plate is inserted between the P electrode and N electrode；
Photoresist layer is formed on the second surface of the substrate, and by the positive wire and negative wire to the LED
Chip, which is powered, makes the LED chip light, so that maskless lithography and developing process are carried out to the photoresist layer, in substrate
Graphical photoresist is formed on second surface；
Baking is carried out to the graphical photoresist and forms mask layer；And
The substrate is etched to form the second microlens structure of array arrangement on the second surface of substrate, described first is micro-
Mirror structure and the second microlens structure are symmetrical on the substrate.
6. the preparation method of flip LED chips structure as claimed in claim 5, it is characterised in that the substrate is sapphire
Substrate or silicon carbide substrates.
7. the preparation method of flip LED chips structure as claimed in claim 5, it is characterised in that the first lenticule knot
The shape and size of structure and the second microlens structure are identical.
8. the preparation method of flip LED chips structure as claimed in claim 7, it is characterised in that the first lenticule knot
Structure and the second microlens structure are dome-type or semielliptical type structure.
9. the preparation method of flip LED chips structure as claimed in claim 5, it is characterised in that the graphical photoresist
For cylindrical light photoresist platform.
10. the preparation method of flip LED chips structure as claimed in claim 5, it is characterised in that the figure of the mask layer
For spherical crown shape.
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| CN107863423A (en) * | 2017-10-26 | 2018-03-30 | 江苏新广联半导体有限公司 | The patterned preparation method of LED flip chip sapphire exiting surface |
| CN109216399B (en) * | 2018-09-29 | 2024-10-15 | 华南理工大学 | Micro-size photonic crystal LED array chip with flip structure and preparation method thereof |
| CN109600910B (en) * | 2018-11-07 | 2020-09-01 | 惠州市华星光电技术有限公司 | Reflective circuit board and manufacturing method thereof |
| CN116504882A (en) * | 2022-04-29 | 2023-07-28 | 福建兆元光电有限公司 | Manufacturing method of Micro LED light projection chip for vehicle |
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