KR20130066440A - Light emitting device and light emitting apparatus having the same - Google Patents

Abstract

PURPOSE: A light emitting device and a light emitting apparatus including the same are provided to improve optical extraction efficiency, by arranging a protrusion in a first plane and a second plane of a substrate. CONSTITUTION: A light emitting structure includes a first conductive semiconductor layer(115), a second conductive semiconductor layer, and an active layer. A first electrode(135) is arranged under the first conductive semiconductor layer. An electrode layer is arranged under the second conductive semiconductor layer. A first connection electrode is arranged under the first electrode. A second connection electrode(143) is arranged under a second electrode. A supporting member(151) is arranged around the first electrode and the second electrode. One of a plurality of second protrusions is arranged to overlap with a part of the first protrusion in a vertical direction.

Description

LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS HAVING THE SAME}

The embodiment relates to a light emitting device and a light emitting device having the same.

III-V nitride semiconductors (group III-V nitride semiconductors) are widely recognized as key materials for light emitting devices such as light emitting diodes (LEDs) and laser diodes (LD) due to their physical and chemical properties. The III-V group nitride semiconductors are usually made of a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + y?

Light emitting diodes (LEDs) are a type of semiconductor device that transmits and receives signals by converting electricity into infrared rays or light using characteristics of a compound semiconductor.

 LEDs or LDs using such nitride semiconductor materials are widely used in light emitting devices for obtaining light, and have been applied to light sources of various products such as keypad light emitting units, display devices, electronic displays, and lighting devices of mobile phones.

The embodiment provides a new light emitting device.

The embodiment provides a light emitting device having improved light extraction efficiency.

The embodiment can improve light extraction efficiency by disposing protrusions on first and second surfaces of the substrate.

The embodiment provides a light emitting device capable of improving light extraction efficiency by disposing protrusions and minute unevennesses having a smaller size than the protrusions on first and second surfaces of the substrate.

The embodiment provides a wafer level packaged light emitting device.

The embodiment provides a light emitting device including a support member having an additive of a ceramic material around a first electrode and a second electrode disposed in a direction opposite to a substrate, and a method of manufacturing the same.

The embodiment provides a light emitting device, a light emitting device package and a lighting device having a light emitting device.

The light emitting device according to the embodiment includes a plurality of first protrusions on a first surface and a first pattern portion having a first recessed portion between the plurality of first protrusions, and a plurality of second protrusions and a plurality of second protrusions on a second surface. A translucent substrate including a second pattern portion having a second recessed portion between the second protrusions; A first conductive semiconductor layer disposed under the first surface of the substrate; The second conductive semiconductor layer; A light emitting structure including an active layer disposed between the first semiconductor layer and the second conductive semiconductor layer; A first electrode disposed under the first conductive semiconductor layer; An electrode layer disposed under the second conductive semiconductor layer; A second electrode disposed under the electrode layer; A first connection electrode disposed under the first electrode; A second connection electrode disposed under the second electrode; And a support member disposed around the first electrode and the second electrode, wherein at least one of the plurality of second protrusions is disposed to overlap at least a portion of the first protrusion in a vertical direction.

The light emitting device according to the embodiment, the light emitting element; And a module substrate having a first pad and a second pad, on which the first connection electrode and the second connection electrode of the light emitting device are mounted, wherein the first connection electrode and the second connection electrode of the light emitting device and the support member are formed. The lower surface includes the same spacing as the upper surface of the module substrate.

The embodiment can improve the mounting process of the light emitting device in the flip method.

The embodiment can provide a light emitting device packaged at the wafer level, thereby eliminating the packaging process, thereby reducing the manufacturing process.

The embodiment can improve the light extraction efficiency of the light emitting device.

The embodiment can improve the heat radiation efficiency of the light emitting device.

According to the embodiment, protrusions may be formed on surfaces corresponding to each other to improve light extraction efficiency.

The embodiment can improve the reliability of the light emitting device, the display device, and the lighting device having the light emitting device mounted in a flip method.

1 is a side sectional view of a light emitting device according to a first embodiment.
FIG. 2 is a bottom view of the light emitting device of FIG. 1.
3 is a view illustrating a first pattern portion and a second pattern portion of a substrate in the light emitting device according to the first embodiment.
4 is a view illustrating a first pattern portion and a second pattern portion of a substrate in the light emitting device according to the second embodiment.
5 to 10 are views illustrating a manufacturing process of the light emitting device of FIG. 1.
FIG. 11 is a side cross-sectional view of a light emitting device having the light emitting element of FIG. 1.
12 is a side cross-sectional view of a light emitting device according to the second embodiment.
13 is a side cross-sectional view of a light emitting device according to the third embodiment.
14 is a graph illustrating a comparison of light extraction efficiency according to a difference in center between a first protrusion and a second protrusion according to an embodiment.
FIG. 15 is a side cross-sectional view illustrating a light emitting device package having the light emitting device of FIG. 1.
16 is a diagram illustrating a display device having a light emitting device according to an exemplary embodiment.
17 is a view showing another example of a display device having a light emitting device according to the embodiment.
18 is a view showing a lighting apparatus having a light emitting device according to the embodiment.

In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be formed "on" or "under" a substrate, each layer The terms " on "and " under " include both being formed" directly "or" indirectly " Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.

Hereinafter, the present invention will be described with reference to the accompanying drawings.

1 is a side sectional view showing a light emitting device according to the first embodiment, and FIG. 2 is a view showing an example of a bottom view of the light emitting device of FIG.

1 and 2, the light emitting device 100 includes a substrate 111 having a first pattern portion 11 and a second pattern portion 12, a first semiconductor layer 113, and a first conductive semiconductor. The layer 115, the active layer 117, the second conductive semiconductor layer 119, the electrode layer 131, the insulating layer 133, the first electrode 135, the second electrode 137, and the first connection electrode ( 141, a second connection electrode 143, and a support member 151.

The substrate 111 may be a transparent insulating or transmissive conductive substrate, for example, sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, Ga At least one of ₂ O ₃ may be used.

In the substrate 111, a surface on which the semiconductor layer is formed may be referred to as a first surface S1, and a surface opposite to the first surface S1 may be defined as a second surface S2. The first surface S1 may be a lower surface of the substrate 111 in FIG. 1, and the second surface S2 may be an upper surface of the substrate 111.

The first surface S1 of the substrate 111 is formed between the substrate 111 and the first semiconductor layer 113, and the second surface S2 is formed of the substrate ( A second pattern portion 12 is included in any light exit surface of 111. The first pattern part 11 may be defined as a first uneven structure or a first light extracting structure, and the second pattern part 12 may be defined as a second uneven structure or a second light extracting structure.

The thickness L1 of the substrate 111 may include a range of 120 μm to 500 μm, and a refractive index thereof may be formed of a material of 2.4 or less, for example, 2 or less. Here, the sapphire substrate has a 1.78 refractive index.

The lengths of adjacent sides of the substrate 111 may be the same or different from each other, and the adjacent sides may be provided in a size having a length of 0.3 mm × 0.3 mm or more or a large area, for example, an area of 1 mm × 1 mm or more. . When viewed from above, the substrate 111 may be formed in a polygonal shape such as a rectangle and a hexagon, but is not limited thereto.

The first pattern portion 11 includes a plurality of first protrusions 11A and a first recessed portion 11B disposed between the plurality of first protrusions 11A, and the first protrusion 11A includes the first protrusion 11A. The first surface S1 of the substrate 111 may be formed in an intaglio shape, and the first concave portion 11B may be formed in an embossed shape in an area excluding the first protrusion 11A. The first protrusion 11A may have a shape in which a lower width is narrower than an upper width. The first protrusion 11A protrudes in a direction opposite to the light emitting structure 120 and includes a hemispherical shape, a convex dome lens, or a convex lens. As another example, the first protrusion 11A may be formed in another shape, for example, a three-dimensional shape having a polygonal shape such as a triangle or a square, a horn shape, and a pillar shape, but is not limited thereto. The first protrusion 11A includes a circular or polygonal shape when viewed from above.

The plurality of first protrusions 11A are arranged separately from each other, and when viewed from the top, the first protrusions 11A may be arranged in a stripe shape, a grid shape, or a matrix shape.

The first recess 11B may be formed in a flat surface or in a rough surface in an area between the first protrusions 11A. The first recess 11B may be disposed in an area excluding the first protrusion 11A. When viewed from the light emitting structure 120, the first protrusion 11A is a convex groove, and a portion of the first semiconductor layer 113 may be disposed.

The first recess 11B may be disposed closer to the first light emitting structure than the first protrusion 11A, and the first protrusion 11A may be disposed on the substrate (11B) rather than the first recess 11B. It may be disposed closer to the second surface (S2) of the 111.

The second pattern portion 12 includes a plurality of second protrusions 12A and a second recessed portion 12B disposed between the plurality of second protrusions 12A, and the second protrusions 12A The second surface S2 of the substrate 111 may be formed in an embossed shape, and the second recess may be formed in an intaglio shape between the second protrusions 12A. The second protrusion 12A may have a shape in which a lower width is narrower than an upper width. The first protrusion 11A protrudes in a direction opposite to the light emitting structure 120 and includes a hemispherical shape, a convex dome lens, or a convex lens. As another example, the second protrusion 12A may be formed in another shape such as a polygonal shape such as a triangle or a square, a cone shape, a polygonal pyramid shape, a column shape such as a circle column or a polygonal column, or a shape such as a horn-to-shape shape. Can be. Each projection may include a circular shape, a polygonal shape, a shape in which spherical surfaces and respective surfaces are mixed. The second concave portion 12B may be formed in a concave shape than the surface of the second projection 12A, the side cross-section of the column shape, such as hemispherical shape, conical shape, polygonal pyramid shape, circle column or polygonal column, Or it may be formed in a shape such as horn-shaped. When viewed from above, the second recess 12B may include a circular shape, a polygonal shape, a shape in which spherical surfaces and respective surfaces are mixed.

A plurality of the second protrusions 12A may be disposed separately from each other, and when viewed from the top, the second protrusions 12A may be arranged in a stripe shape, a grid shape, or a matrix shape.

A first semiconductor layer 113 is formed below the first surface S1 of the substrate 111, and a second surface of the substrate 111 is disposed on the second surface S2 opposite to the first surface S1. A plurality of second protrusions 12A protruding upward from S2 and a second recess 12B formed in the plurality of second protrusions 12A are included.

The first protrusions 11A may be formed at regular intervals, or may be formed at irregular intervals or at random intervals, but are not limited thereto.

The second recess 12B may be formed as a flat surface or may be formed as a rough surface in a region between the second protrusions 12A. The second recess 12B may be disposed in an area excluding the second protrusion 12A.

The second recessed portion 12B may be disposed closer to the first light emitting structure than the second protrusion 12A, and the second protrusion 12A may be disposed on the substrate rather than the second recessed portion 12B. It protrudes from the second surface S2 of 111. The second protrusions 12A may be formed at regular intervals, or may be formed at irregular intervals or at random intervals, but are not limited thereto.

The first pattern part 11 of the substrate converts the critical angle of light incident on the first surface S1, and the second pattern part 12 converts the critical angle of light incident on the second surface S2. Is given. By forming the first pattern portion 11 and the second pattern portion 12 on the first surface S1 and the second surface S2 of the substrate 111, the total reflection ratio of incident light is lowered to improve light extraction efficiency. It can be improved.

The first protrusions 11A and the second protrusions 12A may be formed at regular intervals or at random intervals. The first and second recesses 12B may be formed at regular intervals or at random intervals. Can be formed.

A first semiconductor layer 113 may be formed under the first surface S1 of the substrate 111. The first semiconductor layer 113 may be formed using a group II to group VI (II, III, IV, V, and VI) compound semiconductor. The first semiconductor layer 113 may be formed of at least one layer or a plurality of layers using a group II to group VI (II, III, IV, V, and VI) compound semiconductor. The first semiconductor layer 113 may include, for example, at least one of a semiconductor layer using a group III-V compound semiconductor, for example, GaN, InN, AlN, InGaN, AlGaN, InAlGaN, or AlInN. The first semiconductor layer 113 may be formed of an oxide such as a ZnO layer, but is not limited thereto.

The first semiconductor layer 113 may be formed as a buffer layer, and the buffer layer may reduce the difference in lattice constant between the substrate and the nitride semiconductor layer.

The first semiconductor layer 113 may be formed of an undoped semiconductor layer. The undoped semiconductor layer may be implemented as a group III-V compound semiconductor, for example, a GaN-based semiconductor. The undoped semiconductor layer has a first conductivity type even when the undoped semiconductor layer is intentionally not doped with at least one of the n-type and p-type dopants, and has conductivity of the first conductive semiconductor layer 115. It will have a lower concentration than the dopant concentration.

The first semiconductor layer 113 may be formed of at least one of a buffer layer and an undoped semiconductor layer, but is not limited thereto.

The light emitting structure 120 may be formed under the substrate 111. The light emitting structure 120 includes a group III -V compound semiconductor, for example, _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1 It has a semiconductor having a composition formula), and can emit a predetermined peak wavelength within the wavelength range of the ultraviolet band to the visible light band.

The light emitting structure 120 is disposed between the first conductive semiconductor layer 115, the second conductive semiconductor layer 119, the first conductive semiconductor layer 115 and the second conductive semiconductor layer 119. The formed active layer 117 is included.

A first conductive semiconductor layer 115 may be formed under the first semiconductor layer 113. The first conductive semiconductor layer 115 is implemented with a group III-V compound semiconductor doped with a first conductive dopant, and the first conductive semiconductor layer 115 is an N-type semiconductor layer. The conductive dopant is an N-type dopant and includes Si, Ge, Sn, Se, Te.

A super lattice structure in which different semiconductor layers are alternately stacked may be formed between the first conductive semiconductor layer 115 and the first semiconductor layer 113, and the super lattice structure may reduce lattice defects. Can be. Each layer of the super lattice structure may be laminated to a thickness of several A or more.

A first conductive clad layer may be formed between the first conductive semiconductor layer 115 and the active layer 117. The first conductive clad layer may be formed of a GaN-based semiconductor, and the band gap may be formed to be greater than or equal to the band gap of the active layer 117. The first conductive clad layer serves to constrain the carrier.

An active layer 117 is formed under the first conductive semiconductor layer 115. The active layer 117 may optionally include a single quantum well, a multiple quantum well (MQW), a quantum wire structure or a quantum dot structure, and may include a period of the well layer and the barrier layer. The well layer comprises a composition formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1), and wherein the barrier layer is In _x Al _y And Ga _1-xy N (0? X? 1, 0? Y? 1, 0? X + y? 1).

The period of the well layer / barrier layer may be formed in one or more cycles using, for example, a laminated structure of InGaN / GaN, AlGaN / GaN, InGaN / AlGaN, InGaN / InGaN. The barrier layer may be formed of a semiconductor material having a band gap higher than that of the well layer.

A second conductive semiconductor layer 119 is formed below the active layer 117. The second conductive type semiconductor layer 119 is formed of a semiconductor having a composition formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) For example, it may be made of any one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN. The second conductive semiconductor layer 119 is doped with a second conductive dopant, and the second conductive dopant is a P-type dopant and may include Mg, Zn, Ca, Sr, and Ba. The second conductive semiconductor layer 119 may be formed of a P-type semiconductor layer.

The second conductive semiconductor layer 119 may include a superlattice structure having different semiconductor layers, and the superlattice structure may include an InGaN / GaN superlattice structure or an AlGaN / GaN superlattice structure. The superlattice structure of the second conductive semiconductor layer 119 may abnormally diffuse the current included in the voltage to protect the active layer 117.

In addition, the conductive type of the light emitting structure 120 may be reversed. For example, the first conductive semiconductor layer 115 may be a P-type semiconductor layer, and the second conductive semiconductor layer 119 may be an N-type semiconductor layer. Can be. A third conductive semiconductor layer having a polarity opposite to that of the second conductive type may be formed under the second conductive semiconductor layer 119.

The light emitting device 100 may define the first conductive semiconductor layer 115, the active layer 117, and the second conductive semiconductor layer 119 as a light emitting structure 120, and the light emitting structure may be NP. It can be implemented with any one of a junction structure, a PN junction structure, an NPN junction structure, and a PNP junction structure. Here, P is a P-type semiconductor layer, N is an N-type semiconductor layer, and-includes a structure in which the P-type semiconductor layer and the N-type semiconductor layer is in direct contact or indirect contact. Hereinafter, for convenience of description, the bottom layer of the light emitting structure 120 will be described as the second conductive semiconductor layer 119.

An electrode layer 131 is formed under the second conductive semiconductor layer 119. The electrode layer 131 may be used as an electrode layer, and may be formed as a single layer or multiple layers. The electrode layer 131 includes at least one of an ohmic contact layer, a reflective layer, a diffusion barrier layer, and a protective layer.

The electrode layer 131 may be formed of a structure of an ohmic contact layer / reflective layer / diffusion prevention layer / protective layer, a structure of a reflective layer / diffusion prevention layer / protective layer, or a structure of an ohmic contact layer / reflective layer / protective layer, It may be formed of a reflective layer / diffusion preventing layer or a reflective layer.

The ohmic contact layer may contact the bottom of the second conductive semiconductor layer 119, and the contact area of the ohmic contact layer may be 70% or more of the lower surface area of the second conductive semiconductor layer 119. The ohmic contact layer may include at least one of ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide) ZnO, IrOx, RuOx, NiO, Ni, Cr, and their optional compounds or alloys, such as Al2O3, AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), SnO, InO, INZnO, , Or at least one layer. The ohmic contact layer may have a thickness of about 1 to about 1,000 mm 3. The ohmic contact layer may be formed of a metal material, but is not limited thereto.

The reflective layer may be selected from a material having a reflectance of 70% or more below the ohmic contact layer, for example, a metal of Al, Ag, Ru, Pd, Rh, Pt, or Ir and at least two of the metals. The metal of the reflective layer may be in ohmic contact under the second conductive semiconductor layer 119, in which case the ohmic contact layer may not be formed. The thickness of the reflective layer may be formed to 1 ~ 10,000Å.

The diffusion preventing layer may be selected from Au, Cu, Hf, Ni, Mo, V, W, Rh, Ru, Pt, Pd, La, Ta and Ti and alloys of two or more thereof. The diffusion barrier prevents interdiffusion at the boundaries of the different layers. The thickness of the diffusion barrier layer may be formed to 1 ~ 10,000 ~.

The protective layer may be selected from Au, Cu, Hf, Ni, Mo, V, W, Rh, Ru, Pt, Pd, La, Ta, Ti and alloys of two or more thereof. As shown in FIG.

As another example, the electrode layer 131 may include a laminated structure of a transparent electrode layer / reflective layer, and the transparent electrode layer may include indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), and IAZO. (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), SnO, InO, INZnO, ZnO, IrOx, RuOx can be selected from the group. A reflective layer may be formed below the transparent electrode layer, and the reflective layer may include a structure in which a first layer having a first refractive index and a second layer having a second refractive index are alternately stacked in at least two pairs. The second refractive index is different from each other, and the first layer and the second layer may be formed of a material between 1.5 and 2.4, for example, a conductive or insulating material, and such a structure may be defined as a distributed bragg reflection (DBR) structure.

A light extraction structure such as roughness may be formed on a surface of at least one of the second conductive semiconductor layer 119 and the electrode layer 131, and the light extraction structure may change a critical angle of incident light. It can improve the light extraction efficiency.

The first electrode 135 may be formed under a portion A1 of the first conductive semiconductor layer 115, and the second electrode 137 may be formed under a portion of the electrode layer 131. A first connection electrode 141 is formed below the first electrode 135, and a second connection electrode 143 is formed below the second electrode 137.

The first electrode 135 is electrically connected to a partial region A1 of the first conductive semiconductor layer 115. The first electrode 135 may include an electrode pad, but is not limited thereto.

The first electrode 135 is spaced apart from side surfaces of the active layer 117 and the second conductive semiconductor layer 119 in the partial region A1, and may be a partial region of the first conductive semiconductor layer 115. It can be formed with a smaller area than A1).

The second electrode 137 may be in physical or / and electrical contact with the second conductive semiconductor layer 119 through the electrode layer 131. The second electrode 137 includes an electrode pad.

The first electrode 135 and the second electrode 137 include at least one of an adhesive layer, a reflective layer, a diffusion barrier layer, and a bonding layer. The adhesive layer is in ohmic contact under a portion A1 of the first conductive semiconductor layer 115, and may be formed of Cr, Ti, Co, Ni, V, Hf, and an optional alloy thereof. May be formed to 1 ~ 1,000Å. The reflective layer is formed under the adhesive layer, the material may be formed of Ag, Al, Ru, Rh, Pt, Pd and an optional alloy thereof, the thickness may be formed of 1 ~ 10,000Å. The diffusion barrier layer is formed under the reflective layer, and the material may be formed of Ni, Mo, W, Ru, Pt, Pd, La, Ta, Ti, and optional alloys thereof, the thickness of which is 1 to 10,000Å. It includes. The bonding layer is a layer bonded to the first connection electrode 141, and the material may be formed of Al, Ru, Rh, Pt, and an optional alloy thereof. The thickness of the bonding layer may be 1 to 10,000 1. Can be.

The first electrode 135 and the second electrode 137 may have the same stacked structure or different stacked structures. The stack structure of the second electrode 137 may be smaller than that of the first electrode 135. For example, the first electrode 135 may be a stack structure of an adhesive layer / reflection layer / diffusion prevention layer / bonding layer or an adhesive layer /. The diffusion layer / bonding layer may be formed in a stacked structure, and the second electrode 137 may be formed in a stacked structure of an adhesive layer / reflective layer / diffusion prevention layer / bonding layer or a stacked structure of an adhesive layer / diffusion prevention layer / bonding layer. .

The upper surface area of the second electrode 137 may be the same area as the lower surface area of the electrode layer 131 or at least larger than the upper surface area of the second connection electrode 143.

At least one of the first electrode 135 and the second electrode 137 may further have a current diffusion pattern such as an arm or finger structure branched from the electrode pad. In addition, one or more electrode pads of the first electrode 135 and the second electrode 137 may be formed, but are not limited thereto.

The first connection electrode 141 and the second connection electrode 143 provide a lead function for supplying power and a heat dissipation path. The first connection electrode 141 and the second connection electrode 143 may have a columnar shape, and may include, for example, a shape such as a spherical shape, a circular column, or a polygonal column or a random shape. Here, the polygonal column may be conformal or non-conformal, but is not limited thereto. An upper surface or a lower surface of the first connection electrode 141 and the second connection electrode 143 may include a circle or a polygon, but is not limited thereto. Lower surfaces of the first connection electrode 141 and the second connection electrode 143 may be formed to have different areas from the upper surface. For example, the lower surface area may be larger or smaller than the upper surface area.

At least one of the first connection electrode 141 and the second connection electrode 143 may be formed smaller than the width of the lower surface of the light emitting structure 120, and larger than the width or diameter of the lower surface of each of the electrodes 135 and 137. Can be formed.

The diameter or width of the first connection electrode 141 and the second connection electrode 143 may be formed to 1㎛ ~ 100,000㎛, the height may be formed of 1㎛ ~ 100,000㎛. Here, the thickness H1 of the first connection electrode 141 may be longer than the thickness H2 of the second connection electrode 143, and the first connection electrode 141 and the second connection may be formed. The lower surface of the electrode 143 may be disposed on the same plane (ie, the horizontal surface).

The first connection electrode 141 and the second connection electrode 143 may be formed as a single layer using any one metal or alloy, and the width and height of the single layer may be formed to be 1 μm to 100,000 μm. For example, the thickness of the single layer layer may be formed at a height thicker than the thickness of the second electrode 143.

The first connection electrode 141 and the second connection electrode 143 are Ag, Al, Au, Cr, Co, Cu, Fe, Hf, In, Mo, Ni, Si, Sn, Ta, Ti, W and these It may be formed of any one of an optional alloy of metal. The first connection electrode 141 and the second connection electrode 143 may be formed of In, Sn, Ni, Cu, and an optional alloy thereof to improve adhesion between the first electrode 135 and the second electrode 137. It may be plated with either metal. At this time, the plating thickness is 1 to 100,000 Å.

A plating layer may be further formed on surfaces of the first connection electrode 141 and the second connection electrode 143, and the plating layer may be formed of Tin or an alloy thereof, Ni or an alloy thereof, or a Tin-Ag-Cu alloy. And, the thickness may be formed to 0.5㎛ ~ 10㎛. Such a plating layer can improve the bonding with other bonding layers.

The insulating layer 133 may be formed under the electrode layer 131. The insulating layer 133 is formed on a lower surface of the second conductive semiconductor layer 119, side surfaces of the second conductive semiconductor layer 119 and the active layer 117, and the first conductive semiconductor layer 115. The lower surface of the partial region A1 may be formed. The insulating layer 133 is formed in the lower region of the light emitting structure 120 except for the electrode layer 131, the first electrode 135, and the second electrode 137. The lower part is electrically protected.

The insulating layer 133 includes an insulating material or an insulating resin formed of at least one of an oxide, nitride, fluoride, and sulfide having at least one of Al, Cr, Si, Ti, Zn, and Zr. The insulating layer 133 may be selectively formed of, for example, SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , or TiO ₂ . The insulating layer 133 may be formed as a single layer or a multilayer, but is not limited thereto. The insulating layer 133 is formed to prevent an interlayer short of the light emitting structure 120 when a metal structure for flip bonding is formed under the light emitting structure 120.

The insulating layer 133 may not be formed on the bottom surface of the electrode layer 131, but may be formed only on the surface of the light emitting structure 120. The insulating support member 151 is formed on the lower surface of the electrode layer 131, so that the insulating layer 133 may not extend to the lower surface of the electrode layer 131.

The insulating layer 133 may have a DBR structure in which a first layer and a second layer having different refractive indices are alternately arranged, and the first layer is formed of SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , Any one of TiO ₂ , and the second layer may be formed of any one of materials other than the first layer. In this case, the electrode layer may not be formed.

The insulating layer 133 is formed to a thickness of 100 ~ 10,0001, each layer may be formed of a thickness of 1 ~ 50,000Å or 100 ~ 10,000Å for each layer when formed in a multi-layer structure. Here, in the insulating layer 133 of the multilayer structure, the thickness of each layer may change the reflection efficiency according to the emission wavelength.

The material of the first connection electrode 141 and the second connection electrode 143 is Ag, Al, Au, Cr, Co, Cu, Fe, Hf, In, Mo, Ni, Si, Sn, Ta, Ti, W and their optional alloys. In addition, the first connection electrode 141 and the second connection electrode 143 may be formed of In, Sn, Ni, Cu, and alloys thereof for adhesion between the first electrode 135 and the second electrode 137. It may include a plating layer using, the thickness of the plating layer may be formed to 1 ~ 100,000 ~. The first connection electrode 141 and the second connection electrode 143 may be bonded by eutectic bonding, solder balls, or metal bumps, but are not limited thereto.

The material of the first connection electrode 141 and the second connection electrode 143 is Ag, Al, Au, Cr, Co, Cu, Fe, Hf, In, Mo, Ni, Si, Sn, Ta, Ti, W and their optional alloys. In addition, the first connection electrode 141 and the second connection electrode 143 may be formed of In, Sn, Ni, Cu, and alloys thereof for adhesion between the first electrode 135 and the second electrode 137. It may include a plating layer using, the thickness of the plating layer may be formed to 1 ~ 100,000 ~. The first connection electrode 141 and the second connection electrode 143 may be used as a single metal such as solder balls or metal bumps, but are not limited thereto.

At least one junction electrode may be disposed between the first electrode 135 and the first connection electrode 141, and at least one junction between the second electrode 137 and the second connection electrode 143. An electrode can be placed. Each of the junction electrodes may be formed of at least three metal layers, and includes an adhesive layer, a support layer under the adhesive layer, and a protective layer under the support layer. The adhesive layer is bonded to the second electrode, and may be formed of Cr, Ti, Co, Cu, Ni, V, Hf, or two or more of these alloys, and has a thickness of 1 to 1,000 mW. The support layer is a layer thicker than the thickness of the adhesive layer, Ag, Al, Au, Co, Cu, Hf, Mo, Ni, Ru, Rh, Pt, Pd and may be selectively formed from two or more of these alloys, The thickness is in the range of 1 to 500,000 kPa, and may be formed to a thickness of 1,000 to 10,000 kPa as another example. The protective layer is a layer for protecting the effect on the first conductive semiconductor layer, Au, Cu, Ni, Hf, Mo, V, W, Rh, Ru, Pt, Pd, La, Ta, Ti and these It may be selectively formed from two or more of the alloy, the thickness may be formed of 1 ~ 50,0005.

The support member 151 is used as a support layer for supporting the light emitting device 100. The support member 151 is formed of an insulating material, and the insulating material is formed of a resin layer such as silicon or epoxy. As another example, the insulating material may include a paste or an insulating ink. The insulating material is selected from the group consisting of polyacrylate resin, epoxy resin, phenolic resin, polyamide resin, polyimides rein, unsaturated polyesters resin, polyphenylene ether resin (PPE), polyphenylene oxide resin (PPO), polyphenylenesulfide resin, cyanate ester resin, benzocyclobutene (BCB), Polyamido-amine Dendrimers (PAMAM), and Polypropylene-imine, Dendrimers (PPI), and PAMAM-internal structures and PAMAM-OS (organosilicon) with organic-silicone outer surfaces alone or combinations thereof . The support member 151 may be formed of a material different from that of the insulating layer 133.

At least one of compounds such as oxides, nitrides, fluorides, and sulfides having at least one of Al, Cr, Si, Ti, Zn, and Zr may be added to the support member 151. Here, the compound added in the support member 151 may be a heat spreader, and the heat spreader may be used as powder particles, granules, fillers, and additives of a predetermined size. It will be described as a diffusion agent. Here, the heat spreader may be an insulating material or a conductive material. The size of the heat spreader may be 1 ANGSTROM to 100,000 ANGSTROM and may be 1,000 ANGSTROM to 50,000 ANGSTROM for thermal diffusion efficiency. The particle shape of the heat spreader may include a spherical shape or an irregular shape, but is not limited thereto.

The heat spreader may include a ceramic material. The ceramic material may include a low temperature co-fired ceramic (LTCC), a high temperature co-fired ceramic (HTCC), an alumina, Quartz, calcium zirconate, forsterite, SiC, graphite, fused silica, mullite, cordierite, zirconia, beryllia, ), And aluminum nitride. The ceramic material may be formed of a metal nitride having thermal conductivity higher than that of nitride or oxide among the insulating materials such as nitride or oxide, and the metal nitride may include a material having a thermal conductivity of, for example, 140 W / mK or more. The ceramic material may be, for example, SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , BN, Si ₃ N ₄ , SiC (SiC- CeO 2, AlN, and the like. The thermally conductive material may comprise a component of C (diamond, CNT).

The support member 151 may be formed in a single layer or multiple layers, but is not limited thereto. Since the support member 151 includes a powder of ceramic material therein, the strength of the support member 151 may be improved, and thermal conductivity may also be improved.

The heat spreader included in the support member 151 may be added at a content ratio of about 1 to 99 wt /%, and may be added at a content ratio of 50 to 99 wt% for efficient heat diffusion. By adding a heat spreader to the support member 151, the thermal conductivity in the interior can be further improved. In addition, the coefficient of thermal expansion of the support member 151 is 4-11 [x10 ⁶ / ° C.], and the coefficient of thermal expansion has a coefficient of thermal expansion equal to or similar to that of the substrate 111, for example, a sapphire substrate. It is possible to prevent the wafer from bending or defects due to the difference in thermal expansion with the light emitting structure 120 formed below the 111, thereby preventing the reliability of the light emitting device from being lowered.

Here, an area of the lower surface of the support member 151 may be formed to be substantially the same area as the upper surface of the substrate 111. A lower surface area of the support member 151 may be formed to have an area substantially the same as an upper surface area of the first conductive semiconductor layer 115. In addition, a width of a lower surface of the support member 151 may be equal to a width of an upper surface of the substrate 111 and an upper surface of the first conductive semiconductor layer 115. The support member 151 may be formed and then separated into individual chips, such that side surfaces of the support member 151, the substrate 111, and the first conductive semiconductor layer 115 may be disposed on the same plane. . As another example, an area of the lower surface of the support member 151 may be wider or narrower than an area of the upper surface S1 of the substrate 111, but is not limited thereto.

According to the embodiment, when the thickness of the sapphire substrate is 400 μm and the light output of Comparative Example 1 without the first pattern portion 11 and the second pattern portion 12 is 100% (W), The light output of Comparative Example 2 with the pattern portion 11 is 121.1%, which is increased by about 21%. In addition, when the first pattern portion 11 and the second pattern portion 12 are formed on the sapphire substrate, the light output is 212.4% (W), which is almost 100% higher than that of Comparative Examples 1 and 2. have. Accordingly, by disposing the first pattern portion 11 and the second pattern portion 12 on opposite sides of the substrate 111, the light extraction efficiency may be improved.

Referring to FIG. 2, the length D1 of the first side of the support member 151 is substantially the same as or different from the length of the first side of the substrate 111, and the length of the second side of the support member 151 ( D2) may be formed to be substantially the same as the length of the second side of the substrate 111. As another example, lengths D1 and D2 of each side of the support member 151 may be longer or smaller than each side of the substrate 111, but are not limited thereto. In addition, the distance D5 between the first connection electrode 141 and the second connection electrode 143 is a distance between each electrode pad and may be spaced at least 1/2 of the length of one side of the light emitting device.

The lower surface of the support member 151 may be formed as a substantially flat surface or an irregular surface, but is not limited thereto.

The thickness T1 of the first region of the support member 151 may be formed at least thicker than the thickness H2 of the second connection electrode 143. As another example, the thickness T1 of the first region of the support member 151 may be formed to be thinner than the thickness H2 of the second connection electrode 143, which is a thickness of the insulating layer 133. By forming a thickness thicker than the thickness of the second connection electrode 137, the thickness of the support member 151 may be reduced. The thickness T2 of the second region of the support member 151 may be thicker than the thickness of the first connection electrode 141. The thickness T1 of the support member 151 may be formed in a range of 1 μm to 100,000 μm, and may be formed in a range of 50 μm to 1,000 μm as another example.

The lower surface of the support member 151 is formed lower than the lower surfaces of the first electrode 135 and the second electrode 137, and the lower surface of the first connection electrode 141, the second connection electrode 143. May be disposed on the same plane (ie, horizontal plane) as the lower surface of

The support member 151 contacts the circumferential surfaces of the first electrode 135, the second electrode 137, the first connection electrode 141, and the second connection electrode 143. Accordingly, heat conducted from the first electrode 135, the second electrode 137, the first connection electrode 141, and the second connection electrode 143 is diffused through the support member 151, and radiates heat. Can be. At this time, the thermal conductivity of the support member 151 is improved by the heat spreading agent therein, and heat radiation is performed through the entire surface. Therefore, the light emitting device 100 may improve reliability by heat.

In addition, one side or more than one side surface of the support member 151 may be disposed on the same plane (that is, vertical surface) with the side surfaces of the light emitting structure 120 and the substrate 111. In addition, one side or more than one side surface of the support member 151 may protrude more than the side surfaces of the light emitting structure 120 and the substrate 111, but is not limited thereto.

The light emitting device 100 is mounted in a flip-type manner, and most of the light is emitted toward the upper surface of the substrate 111, and some light is emitted through the side surface of the substrate 111 and the side surface of the light emitting structure 120. Since it is emitted, it is possible to reduce the light loss by the first electrode 135 and the second electrode 137. Accordingly, the light extraction efficiency is improved by the first pattern part 11 and the second pattern part 12 having different sizes of the substrate 111 disposed on the light emitting device 100. The heat dissipation efficiency may be improved by the support member 151.

Referring to FIG. 3, the width B1 of the first protrusion 11A in the first pattern portion 11 of the substrate 111 is the maximum width or the lower width of the first protrusion 11A, and the first recess portion ( The width B2 of 11B may be equal to or wider than the width B2 of the first recess 11B, and may be equal to or different from the height L2 of the first protrusion 11A. Can be. The width B2 of the first recess 11B is a gap between the adjacent first protrusions 11A.

The ratio of the width B1 of the first protrusion 11A and the width B2 of the first recess 11B may be about 1: 1 to 4: 2, and the height of the first protrusion 11A may be about The ratio of L2) and the width B2 of the first recess 11B may be in the range of 1: 1 to 1: 1/3. The width B1 of the first protrusion 11A includes a range of 3 μm ± 0.5 μm, and the width B2 of the first recess 11B includes a range of 2 μm ± 0.5 μm. The height L2 of the protrusion 11A may be formed in a range of 0.8 μm to 2.5 μm.

In the second pattern portion 12 of the substrate 111, the width B4 of the second protrusion 12A is the maximum width or the lower width of the second protrusion 12A, and the width of the second recess 12B is lower than that of the second recess 12B. The width B5 may be equal to or wider than the width B5 of the second recess 12B, and may be the same as or different from the height L3 of the second protrusion 12A. The width B5 of the second recess 12B is the distance between the adjacent second protrusions 12A.

The ratio of the width B4 of the second protrusion 12A and the width B5 of the second recess 12B may be about 1: 1 to 4: 2, and the height of the second protrusion 12A may be The ratio of L3) and the width B5 of the second recess 12B may be in the range of 1: 1 to 1: 1/3. The width B4 of the second protrusion 12A includes a range of 3 μm ± 0.5 μm, and the width B5 of the second recess 12B includes a range of 2 μm ± 0.5 μm. The height L3 of the protrusion 12A may be formed in a range of 0.8 μm to 2.5 μm.

The heights L2 and L3 of the first protrusion 11A and the second protrusion 11B may be the same or different from each other. The interval B3 between the first protrusions 11A may be formed at the same or different intervals as the interval B6 between the second protrusions 12A.

The first protrusion 11A and the second protrusion 12A may have, for example, the same shape and the same size and may be arranged at the same period. Each of the second protrusions 12A may be disposed to overlap each other in the vertical direction on each of the first protrusions 11A. The central axis C1 of the first protrusion 11A may be disposed on the same line as the central axis of the second protrusion 12A or may have a predetermined difference.

As another example, the center of the first protrusion 11A may be different from the center of the second protrusion 12A, and the second protrusion 12A may be perpendicular to a part of the first protrusion 11A. It may be arranged to overlap. The difference between the central axis of the first protrusion 11A and the central axis of the second protrusion 12A may be, for example, in a range of 0.1 μm to 1.5 μm.

Referring to FIG. 4, the first protrusion 11A and the first pattern portion 11 of the first pattern portion 11 and the second protrusion 12A of the second pattern portion 12 may be formed on the substrate 111. The shape and size of the second recess 12B will be described with reference to FIG. 3.

The center axis C1 of the first protrusion 11A and the center axis C2 of the second protrusion 12A are arranged to be offset from each other. The difference G1 between the central axis C1 of the first protrusion 11A and the central axis C2 of the second protrusion 12A may be formed in a range of 2.5 μm to 3.5 μm, and the second protrusion The vertical gap G2 between the central axis C2 of 12A and the outer surface of the first projection 11A is to be spaced about one half of the width B4 of the second projection 12A. And, for example, 1 μm-1.6 μm. In this case, at least a part of the second protrusion 12A may be disposed to overlap a part of the first protrusion 11A in a vertical direction. On the contrary, based on the central axis C1 of the first protrusion 11A, the second protrusion 12A may be spaced about 1/2 of the width B of the first protrusion 11A, for example. 1 μm-1.6 μm. At least a portion of the second protrusion 12A may be disposed to overlap a region between the first protrusion 11A and the first protrusion 11A in a vertical direction. In addition, at least one central axis C1 of the plurality of first protrusions 11A may be disposed to correspond to a direction perpendicular to the second recess 12B.

As shown in FIG. 14, when the light efficiency according to the distance G2 in the vertical direction between the central axis C2 of the second protrusion 12A and the first protrusion 11A, the distance G2 is When it is 1 μm or more, for example, when the range of 1 μm to 1.6 μm, it can be seen that the light extraction efficiency of the light emitting device is increased.

5 to 10 are views illustrating a manufacturing process of the light emitting device according to the first embodiment. The following fabrication process is shown as an individual device for ease of description, but may be fabricated at the wafer level, and the individual device may be described as being fabricated through the process described below. In addition, the present invention is not limited to the manufacturing process described below, and may be manufactured in an additional process or fewer processes in a specific process of each process.

Referring to FIG. 5, the substrate 111 may be loaded into growth equipment, and may be formed in a layer or pattern form using a compound semiconductor of group II to group VI elements thereon. The substrate 111 is used as a growth substrate.

Here, the substrate 111 may be made of a light transmissive substrate, an insulating substrate or a conductive substrate, for example, sapphire substrate (Al ₂ O ₃ ), GaN, SiC, ZnO, Si, GaP, InP, Ga ₂ O ₃ , and GaAs and the like. The first pattern part 11 is formed on the first surface S1 of the substrate 111, and the first pattern part 11 is a mask set in advance with respect to the first surface S1 of the substrate 111. The pattern may be disposed and etched to form a plurality of first protrusions 11A. The first pattern part 11 refers to FIGS. 1 and 3, and the first pattern part 11 may change the critical angle of incident light to improve light extraction efficiency.

A first pattern portion having a plurality of first protrusions 11A and a first recess 11B by disposing a mask pattern on the first surface S1 of the substrate 111 and etching by a first etching method ( 11). The plurality of first protrusions 11A may protrude in an intaglio form in a downward direction of the substrate 111, and the shape of the plurality of first protrusions 11A may include a hemispherical shape or a horn shape. It may protrude in an embossed shape by the first protrusion 11A. The first etching method may be used in at least one of wet etching and dry etching, and a detailed description of the first pattern part 11 will be described with reference to FIGS. 1 and 3. Here, the wet etching method may be used to form first recesses 11B or protrusions having irregular intervals, and the dry etching method may be used to form recesses or protrusions having periodic or irregular intervals. can do.

The growth equipment may be an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), dual-type thermal evaporator, sputtering, metal organic chemical (MOCVD) vapor deposition) and the like, and the present invention is not limited thereto.

A first semiconductor layer 113 is formed on the substrate 111, and the first semiconductor layer 113 may be formed using a compound semiconductor of a group III-V group element. The first semiconductor layer 113 may be formed as a buffer layer to reduce a difference in lattice constant from the substrate 111. The first semiconductor layer 113 may be formed of an undoped semiconductor layer, and the undoped semiconductor layer may be formed of a GaN-based semiconductor that is not intentionally doped.

The light emitting structure 120 may be formed on the first semiconductor layer 113. The light emitting structure 120 may be formed in the order of the first conductive semiconductor layer 115, the active layer 117, and the second conductive semiconductor layer 119.

The first conductive semiconductor layer 115 is a compound semiconductor of a group III-V element doped with a first conductive dopant, such as GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like can be selected. When the first conductive type is an N type semiconductor, the first conductive type dopant includes an N type dopant such as Si, Ge, Sn, Se, Te, or the like. The first conductive semiconductor layer 115 may be formed as a single layer or a multilayer, but is not limited thereto. The first conductive semiconductor layer 115 may further include a superlattice structure having different materials, but is not limited thereto.

An active layer 117 is formed on the first conductive semiconductor layer 115, and the active layer 117 may include at least one of a single quantum well structure, a multiple quantum well structure, a quantum line structure, and a quantum dot structure. . The active layer 117 is a group III -V compound of an element using a semiconductor material _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1 Cycle of the well layer and barrier layer having a composition formula), e.g. It is not limited thereto.

A conductive cladding layer may be formed on or under the active layer 117, and the conductive cladding layer may be formed of an AlGaN-based semiconductor. The barrier layer of the active layer 117 may be higher than the band gap of the well layer, and the conductive clad layer may be formed higher than the band gap of the barrier layer.

The second conductive semiconductor layer 119 is formed on the active layer 117, and the second conductive semiconductor layer 119 is a compound semiconductor of a group III-V element doped with a second conductive dopant. GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like. When the second conductive type is a P type semiconductor, the second conductive type dopant includes a P type dopant such as Mg and Zn. The second conductive semiconductor layer 119 may be formed as a single layer or a multilayer, but is not limited thereto. The second conductive semiconductor layer 119 may further include a superlattice structure having different materials, but is not limited thereto.

The first conductive semiconductor layer 115, the active layer 117, and the second conductive semiconductor layer 119 may be defined as a light emitting structure 120. In addition, a third conductive semiconductor layer, eg, an N-type semiconductor layer, having a polarity opposite to that of the second conductive type may be formed on the second conductive semiconductor layer 119. Accordingly, the light emitting structure 120 may be formed of at least one of an NP junction, a PN junction, an NPN junction, and a PNP junction structure.

Referring to FIG. 6, etching is performed on a partial area A1 of the light emitting structure 120. A portion of the light emitting structure 120 may be exposed to the first conductive semiconductor layer 115, and an exposed portion of the first conductive semiconductor layer 115 may be formed on the top surface of the active layer 117. It can be formed at a lower height.

The etching process masks the upper surface area of the light emitting structure 120 in a mask pattern, and then performs dry etching on the partial area A1 of the light emitting structure 120. The dry etching may include at least one of Inductively Coupled Plasma (ICP) equipment, Reactive Ion Etching (RIE) equipment, Capacitive Coupled Plasma (CCP) equipment, and Electron Cyclotron Resonance (ECR) equipment. Another etching method may further include, but is not limited to, wet etching.

Here, the partial region A1 of the light emitting structure 120 may be set to an arbitrary region as an etching region, and the number of the regions A1 may be one or plural.

Referring to FIG. 7, an electrode layer 131 is formed on the light emitting structure 120. The electrode layer 131 may be formed to have a smaller area than the upper surface area of the second conductive semiconductor layer 119, which may prevent shorting due to the manufacturing process of the electrode layer 131. Here, the electrode layer 131 is masked with a mask on an area spaced apart from the upper edge of the second conductive semiconductor layer 119 by a predetermined distance D3 and a partial area A1 of the light emitting structure 120. Deposition may be carried out by sputter equipment or / and deposition equipment.

The electrode layer 131 may include a metal material having a reflectance of at least 70% or at least 90%.

The electrode layer 131 may be formed of a structure of an ohmic contact layer / reflective layer / diffusion prevention layer / protective layer, a structure of a reflective layer / diffusion prevention layer / protective layer, or a structure of an ohmic contact layer / reflective layer / protective layer, It may be formed of a reflective layer. The material and thickness of each layer will be referred to the description of FIG. 1.

The first electrode 135 is formed on the first conductive semiconductor layer 115, and the second electrode 137 is formed on the electrode layer 131. The first electrode 135 and the second electrode 137 may be formed by sputtering and / or deposition equipment after masking a region other than the electrode formation region with a mask, but are not limited thereto. The first electrode 135 and the second electrode 137 are Cr, Ti, Co, Ni, V, Hf, Ag, Al, Ru, Rh, Pt, Pd, Ni, Mo, W, La, Ta, Ti And optionally alloys thereof. The first electrode 135 and the second electrode 137 may be formed in multiple layers, and may include, for example, at least two layers of an adhesive layer / reflection layer / diffusion layer / bonding layer using the above materials. The first electrode 135 and the second electrode 137 may be formed in the same stacked structure in the same process, but is not limited thereto.

The second electrode 137 may be in physical contact with the electrode layer 131 and the second conductive semiconductor layer 119.

The insulating layer 133 is formed on the electrode layer 131. The insulating layer 133 may be formed by sputtering or deposition. The insulating layer 133 is formed on an area except for the first electrode 135 and the second electrode 137, and the upper surface of the electrode layer 131 and the second conductive semiconductor layer 119, and The exposed region of the first conductive semiconductor layer 115 is covered.

The insulating layer 133 includes an insulating material or an insulating resin such as oxides, nitrides, fluorides, sulfides, and the like of Al, Cr, Si, Ti, Zn, and Zr. The insulating layer 133 may be selectively formed of, for example, SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , or TiO ₂ . The insulating layer 133 may be formed as a single layer or a multilayer, but is not limited thereto.

Here, the process of forming the electrodes 135 and 137 and the process of forming the insulating layer 133 may be changed.

Referring to FIG. 8, a first connection electrode 141 is bonded on the first electrode 135, and a second connection electrode 143 is bonded on the second electrode 137. The first connection electrode 141 includes a conductive pad such as solder balls and / or metal bumps, and is bonded onto the first electrode 135. The first connection electrode 141 may be disposed in a direction perpendicular to the top surface of the first conductive semiconductor layer 115. The second connection electrode 143 includes a conductive pad such as solder balls or / and metal bumps, and is bonded onto the second electrode 137. The second connection electrode 143 may be disposed in a direction perpendicular to the top surface of the second conductive semiconductor layer 119.

Here, the thickness H1 of the first connection electrode 141 may be formed at least longer than the thickness H2 of the second connection electrode 143, and the first connection electrode 141 and the second connection may be formed. Lower surfaces of the electrodes 143 are disposed on different planes, and upper surfaces thereof are disposed on the same plane (ie, horizontal plane).

9, the support member 151 is formed on the insulating layer 133 by squeegeeing and / or dispensing. The support member 151 is formed of an insulating support layer by adding a heat spreader to a resin material such as silicone or epoxy. The heat spreader may include at least one of an oxide, a nitride, a fluoride, and a sulfide having a material such as Al, Cr, Si, Ti, Zn, Zr, for example, a ceramic material. The heat spreader may be defined as powder particles, granules, fillers, and additives of a predetermined size.

The heat spreader includes a ceramic material, and the ceramic material includes a low temperature co-fired ceramic (LTCC) or a high temperature co-fired ceramic (HTCC). The ceramic material may be formed of a metal nitride having thermal conductivity higher than that of nitride or oxide among the insulating materials such as nitride or oxide, and the metal nitride may include a material having a thermal conductivity of, for example, 140 W / mK or more. The ceramic material may be SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , BN, Si ₃ N ₄ , SiC (SiC-BeO), BeO, CeO, It may be a ceramic series such as AlN. The thermally conductive material may comprise a component of C (diamond, CNT). The heat spreader may be included in the support member 151 in the range of about 1 to 99 Wt /%, and may be added to 50% or more for heat diffusion efficiency.

The support member 151 may be formed by mixing a polymer material in an ink or paste, and the method of mixing the polymer material may be a ball mill, an oil ball mill, an impeller mixing, a bead mill, a basket mill. In this case, a solvent and a dispersant may be used for even dispersion, and the solvent is added for viscosity control, and 3 to 400 Cps for ink and 1000 to 1 million Cps for paste are preferable. In addition, the type is water, methanol (ethanol), ethanol (isool), isopropanol (isopropanol), butylcabitol (butylcabitol), MEK, toluene (xylene), diethylene glycol (DiethyleneGlycol; DEG) , Formamide (FA), α-terpineol (TP), γ-butyrolactone (BL), methylcellosolve (MCS), propylmethylcellulose solution (Propylmethylcellosolve; PM) may include a single or a plurality of combinations. In order to increase the interparticle bonding, 1-Trimethylsilylbut-1-yne-3-ol, Allytrimethylsilane, Trimethylsilyl methanesulfonate, Trimethylsilyl

tricholoracetate, Methyl trimethylsilylacetate, Trimethylsilyl propionic acid

Silane-based additives such as these may enter, but in this case, risk of gelation

The choice of addition should be carefully.

Here, in the manufacturing process, a connection electrode such as solder bumps may be manufactured and bonded in advance, and then a support member may be formed around the connection electrode. On the contrary, the insulating layer, such as ink or paste, may be printed or dispensed, cured, and then formed with a hole corresponding to the connection electrode, and then filled with a conductive material to form the connection electrode.

The thickness T1 of the support member 151 may be formed to a thickness having the same height as the top surface of the first connection electrode 141 and the second connection electrode 143. The thickness T1 of the support member 151 may be formed such that the top surfaces of the first connection electrode 141 and the second connection electrode 143 are exposed.

The support member 151 is filled around the first connection electrode 141, the second connection electrode 143, the first electrode 135, and the second electrode 137. An upper surface of the first connection electrode 141 and the second connection electrode 143 is exposed on an upper surface of the support member 151.

The support member 151 is an insulating support layer and supports the circumferences of the plurality of connection electrodes 141 and 143. That is, the plurality of connection electrodes 141 and 143 may be inserted into the support member 151.

The support member 151 is cured within a predetermined temperature, for example, 200 ° C. ± 100 ° C., and the curing temperature is in a range that does not affect the semiconductor layer.

Here, after the supporting member 151 is formed, a connection electrode hole is formed in the supporting member 151, and then the first and second connection electrodes 141 and 143 may be formed.

The thickness of the substrate 111 may be 150 μm or more, or may be formed to a thickness in the range of 30 μm to 500 μm through a polishing process of the lower surface of the substrate 111. This is further provided by a separate support member 151 on the opposite side of the substrate 111 in the light emitting device 100, the substrate 111 is used as a layer for emitting light, the thickness of the substrate 111 is further It can be processed thinly. In this case, a polishing process such as a chemical mechanical polishing (CMP) process may be performed on the surfaces of the support member 151, the first connection electrode 141, and the second connection electrode 143. As another example, the support member 151 may be formed, and then electrode holes may be formed on the support member 151, respectively, and the first connection electrode and the second connection electrode may be formed through the electrode holes. have.

After rotating the light emitting device manufactured as shown in FIG. 9 by 180 degrees, as shown in FIG. 10, a mask pattern is formed on the first surface S1 of the substrate 111, that is, the second surface S2 opposite to the surface on which the semiconductor layer is formed. The second pattern portion 12 having the plurality of second protrusions 12A and the second concave portion 12B is formed through the second etching method. The second etching method may be used in at least one of a wet etching and a dry etching. The second etching method may be used in at least one of a wet etching and a dry etching. The second pattern part 12 will be described in detail with reference to FIGS. 1 and 3. Here, the wet etching method may be used to form recesses or protrusions having irregular intervals, and the dry etching method may be used to form recesses or protrusions having periodic or irregular intervals.

The light emitting device of FIG. 10 may be provided to an individual light emitting device as shown in FIG. 1 by at least one of scribing, breaking, and cutting processes on an individual chip basis. The light emitting device may be packaged at the wafer level, so that the light emitting device may be mounted on a module substrate by flip bonding without a separate wire.

FIG. 11 illustrates a light emitting device on which the light emitting device of FIG. 1 is mounted.

Referring to FIG. 11, the light emitting device of FIG. 1 may be mounted on the module substrate 170 as shown in FIG. 11 and used as a device such as a light emitting module. The light emitting device 100 is mounted on the module substrate 170 by a flip method.

In the module substrate 170, an insulating layer 172 is disposed on the metal layer 171, and a first electrode pad 173 and a second electrode pad 174 are formed on the insulating layer 172. The first electrode pad 173 and the second electrode pad 174 are supplied as a land pattern to supply power. A protective layer 175 is formed on the insulating layer 172 except for the electrode pads 173 and 174, and the protective layer 175 is a solder resist layer, a reflective layer, or an insulating layer. Green protective layer. The protective layer 175 reflects the light efficiently, thereby improving the amount of reflected light.

The module substrate 170 may be a printed circuit board (PCB) including a circuit pattern (not shown). However, the module substrate 170 may include a resin-based PCB, a metal core PCB (MCPCB, Metal Core PCB), a flexible PCB (FPCB, Flexible PCB) and the like, but is not limited thereto.

The first connection electrode 141 of the light emitting device 100 corresponds to the first electrode pad 173, and the second connection electrode 143 of the light emitting device 100 corresponds to the second electrode pad 174. This corresponds. The first electrode pad 173 and the first connection electrode 141 are bonded by the bonding material 177, and the second electrode pad 174 and the second connection electrode 143 are bonded by the bonding material 177. Is bonded by

The light emitting device 100 is operated by power supplied from the first electrode pad 173 and the second electrode pad 174, and the generated heat is generated by the first connection electrode 141 and the second connection electrode ( After conducting through 143, heat may radiate through the entire surface of the support member 151. The bottom surface of the support member 151 may be spaced apart from the top surface of the module substrate 170, and the spaced distance may be spaced apart from the thickness of the bonding material 177.

Spaces between the bottom surface of the first connection electrode 141, the second connection electrode 143, and the support member 151 of the light emitting device 100 and the top surface of the module substrate 170 may be formed at the same interval. have.

Although the configuration in which one light emitting device 100 is mounted on the module substrate 170 is disclosed, a plurality of light emitting devices 100 may be arrayed, but the embodiment is not limited thereto. In the light emitting device 100, light extraction efficiency may be improved by the first pattern part 11 and the second pattern part 12 of the substrate 111.

12 is a side sectional view showing a light emitting device according to the second embodiment.

Referring to FIG. 11, the light emitting device includes a substrate 111 having a first pattern portion 11 and a second pattern portion 12, a first semiconductor layer 113, a first conductive semiconductor layer 115, and an active layer. 117, the second conductive semiconductor layer 119, the electrode layer 131, the insulating layer 133, the first electrode 135, the second electrode 137, the first connection electrode 141, and the second connection The electrode 143 and the support member 151 may be included.

In addition, the light emitting device includes a second pattern portion 12 on the second surface S2 of the substrate 111 opposite to the support member 151, and a fine uneven pattern 13 on the second surface S2. do. The fine concave-convex pattern 13 may have a size smaller than that of the second concave portion 12B or the second protrusion 12A of the second pattern portion 12.

The fine concave-convex pattern 13 is disposed on the second surface S2 with third recessed portions having a lower depth than the second surface S2 spaced apart from each other, and the third recessed portion 12A is disposed on the second protrusion 12A. It may be formed in a size smaller than 50% compared to the size of, for example, may be formed in a size of 1/2 ~ 1/100 range compared to the size of the second projection (12A). The size of the third recess may be at least one of a maximum width, a length of one side, a radius, a thickness, or a height, but is not limited thereto. The size of the depth or the width of the third recess may be formed in the range of 0.1 nm-100 nm, or in the range of 0.1 nm-1 μm.

The second pattern part 12 converts a critical angle of incident light, and the fine uneven pattern 13 is light incident on the second pattern part 12 and the substrate 111 and the second surface S2. The critical angle of the incident light is converted. By forming the uneven patterns having different sizes on the substrate 111, the total reflection ratio of the incident light can be lowered to improve the light extraction efficiency.

Third concave portions of the fine concave-convex pattern 13 may be formed at regular intervals, or may be formed at random intervals or at irregular intervals.

13 is a side sectional view showing a light emitting device according to the third embodiment.

Referring to FIG. 13, the light emitting device includes a substrate 111 having a first pattern portion 11 and a second pattern portion 12, a first semiconductor layer 113, a first conductive semiconductor layer 115, and an active layer. 117, the second conductive semiconductor layer 119, the electrode layer 131, the insulating layer 133, the first electrode 135, the second electrode 137, the first connection electrode 141, and the second connection The electrode 143, the support members 152 and 152A, and the phosphor layer 161 may be included. In addition, the substrate 111 may include a fine concave-convex pattern 13 on the second surface S2.

The phosphor layer 161 may be a fluorescent film or a coated layer adhered on at least one surface of the substrate 111 and the light emitting structure 120, and may be formed as a single layer or a multilayer.

The phosphor layer 161 is formed on at least one side surface of the substrate 111 and the light emitting structure 120 on the second surface S2 of the substrate 111. The phosphor layer 161 may have a thickness of 1 to 100,000 μm, and as another example, a thickness of 1 to 10,000 μm. The thickness of the phosphor layer 161 may be a length in the thickness direction of the light emitting structure 120. The phosphor layer 161 is formed in a region of the side surface of the light emitting structure 120 except for a region in which the first electrode 135 is formed, and both ends of the phosphor layer 161 are second conductive of the light emitting structure 120. It may be extended to the side of the type semiconductor layer 119.

The phosphor layer 161 may include different phosphor layers, and the different phosphor layers may include one phosphor layer of a red, yellow, or green phosphor layer, and a second layer formed on the first layer. And a phosphor layer different from the first layer. The phosphor layer 161 may be disposed with different phosphor layers in the first and second regions that do not overlap. A protective layer made of a transparent resin material for protection may be further formed on the side of the phosphor layer 161 and the light emitting structure, but is not limited thereto.

The phosphor layer 161 may be in direct contact with the surface of the light emitting device, or may be bonded by a light transmitting resin layer or an adhesive layer, but is not limited thereto.

The substrate 111 may include a first pattern portion 11 having a first uneven structure formed on the first surface S1, a second pattern portion 12 formed on the second surface S2, and a fine uneven pattern 13. ). The phosphor layer 161 may be formed in a concave-convex structure along the second pattern portion 12, but is not limited thereto. The amount of light extracted through the upper portion of the substrate 111 may be increased, and thus color mixing by the phosphor layer 161 may be improved.

As another example, a lens may be formed on the substrate 111 or on the phosphor layer 161, and the lens may have a total reflection surface having a total reflection slope with respect to a central axis of the body, or may be concave. And convex surfaces.

The support members 152 and 152A are spaced apart from the first support member 152 and the first support member 152 around the first electrode 135 and the first connection electrode 141. And a second support member 152 around the second connection electrode 143. Since the first support member 152 and the second support member 152A are separated from each other by the separation groove 152B, not only an insulating material but also a conductive material may be formed. The conductive material may be a conductive material such as carbon, silicon carbide (SiC), or may be formed of a metal. When the first support member 152 and the second support member 152A are conductive materials, the first support member 152 and the second support member 152A may be formed of materials different from those of the first connection electrode 141 and the second connection electrode 143. have.

The first support member 152 and the second support member 152A may use the material of FIG. 1, but are not limited thereto.

FIG. 15 is a view illustrating a light emitting device package in which the light emitting device of FIG. 1 is mounted.

Referring to FIG. 15, the light emitting device package 200 may include a body part 211, a first lead electrode 215 and a second lead electrode 217 installed on the body part 211, and a molding member 219. , And the light emitting device 100.

The body portion 211 may be injection molded selectively from a high reflection resin series (eg, PPA), a polymer series, or a plastic series, or may be formed in a single layer or multilayer substrate stack structure. The body portion 211 may be formed of a transparent silicon material.

The body portion 211 includes a cavity 212 having an open top, and a circumferential surface of the cavity 212 may be inclined or formed perpendicular to the cavity bottom surface.

At least one lead electrode, for example, two or more lead electrodes may be disposed in the cavity 212. A first lead electrode 215 and a second lead electrode 217 are disposed on the bottom of the cavity 212, and the first lead electrode 215 and the second lead electrode 217 are spaced apart from each other.

The light emitting device 100 is bonded to the first lead electrode 215 and the second lead electrode 217 by a flip method. That is, the first connection electrode 141 of the light emitting device 100 is bonded to the first lead electrode 215, and the second connection electrode 143 is bonded to the second lead electrode 217.

Upper surfaces of the first lead electrode 215 and the second lead electrode 217 and a lower surface of the light emitting device 100, that is, the first connection electrode 141, the second connection electrode 143, and the support member. Spaces between the lower surfaces of the 151 may be formed at the same interval.

The support member 151 of the light emitting device 100 is spaced apart on the first lead electrode 215 and the second lead electrode 217 and radiates heat through the entire surface.

A molding member 219 is formed in the cavity 212, and the molding member 219 may be formed of a light transmissive resin material such as silicon or epoxy, and may include a phosphor.

Light generated in the light emitting device 100 may be extracted through the top and side surfaces of the light emitting device 100, and the extracted light may be emitted to the outside through the molding member 219. . Here, the light extraction efficiency through the upper surface of the substrate by the first pattern portion 11 and the second pattern portion 12 formed on the upper surface of the light emitting device 100 can be further improved.

The light emitting device package 200 may be mounted as one or a plurality of light emitting devices of the above-described embodiments, but is not limited thereto. When the light emitting device package includes a light emitting device according to another embodiment having a phosphor layer, a separate phosphor may not be added to the molding member 219, and phosphors emitting different colors or similar colors may be added. Can be.

<Lighting system>

The light emitting device or the light emitting device package according to the embodiment may be applied to the light unit. The light unit includes a structure in which a plurality of light emitting devices or light emitting device packages are arranged. 16 and 17, the lighting device shown in FIG. 18, and may include a lamp, a traffic light, a vehicle headlight, an electric sign, and the like.

16 is an exploded perspective view of a display device according to an exemplary embodiment.

Referring to FIG. 16, the display apparatus 1000 according to the embodiment includes a light guide plate 1041, a light emitting module 1031 that provides light to the light guide plate 1041, and a reflective member 1022 under the light guide plate 1041. ), An optical sheet 1051 on the light guide plate 1041, a display panel 1061, a light guide plate 1041, a light emitting module 1031, and a reflective member 1022 on the optical sheet 1051. The bottom cover 1011 may be included, but is not limited thereto.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 serves to diffuse light into a surface light source. The light guide plate 1041 is made of a transparent material, for example, acrylic resin-based such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN). It may include one of the resins.

The light emitting module 1031 provides light to at least one side of the light guide plate 1041, and ultimately acts as a light source of the display device.

At least one light emitting module 1031 may be disposed in the bottom cover 1011, and may provide light directly or indirectly on at least one side of the light guide plate 1041. The light emitting module 1031 may include a module substrate 1033 and a light emitting device 100 according to the exemplary embodiment disclosed above, and the light emitting device 100 may be arranged on the module substrate 1033 at predetermined intervals. have. As another example, the light emitting device package according to the embodiment may be arrayed on the module substrate 1033.

The module substrate 1033 may be a printed circuit board (PCB) including a circuit pattern (not shown). However, the module substrate 1033 may include not only a general PCB but also a metal core PCB (MCPCB, Metal Core PCB), a flexible PCB (FPCB, Flexible PCB) and the like, but is not limited thereto. When the light emitting device 100 is mounted on the side surface of the bottom cover 1011 or the heat dissipation plate, the module substrate 1033 may be removed. Here, a part of the heat radiating plate may be in contact with the upper surface of the bottom cover 1011.

In addition, the plurality of light emitting devices 100 may be mounted on the module substrate 1033 such that an emission surface from which light is emitted is spaced apart from the light guide plate 1041 by a predetermined distance, but is not limited thereto. The light emitting device 100 may directly or indirectly provide light to a light incident portion that is at least one side of the light guide plate 1041, but is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflection member 1022 reflects the light incident on the lower surface of the light guide plate 1041 so as to face upward, thereby improving the brightness of the light unit 1050. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be combined with the top cover, but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, and includes a first and second substrates of transparent materials facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 displays information by light passing through the optical sheet 1051. Such a display device 1000 can be applied to various types of portable terminals, monitors of notebook computers, monitors of laptop computers, televisions, and the like.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light-transmitting sheet. The optical sheet 1051 may include at least one of a sheet such as, for example, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The diffusion sheet diffuses the incident light, the horizontal and / or vertical prism sheet focuses the incident light into the display area, and the brightness enhancement sheet reuses the lost light to improve the brightness. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

Here, the light guide plate 1041 and the optical sheet 1051 may be included as an optical member on the optical path of the light emitting module 1031, but are not limited thereto.

17 is a diagram illustrating a display device according to an exemplary embodiment.

Referring to FIG. 17, the display device 1100 includes a bottom cover 1152, a module substrate 1120 on which the light emitting device 100 disclosed above is arranged, an optical member 1154, and a display panel 1155. .

The module substrate 1120 and the light emitting device 100 may be defined as a light emitting module 1160. The bottom cover 1152, the at least one light emitting module 1160, and the optical member 1154 may be defined as a light unit. The light emitting devices may be mounted on the module substrate 1120 in a flip manner to be arrayed. In addition, the light emitting device package disclosed in the embodiment may be arrayed on the module substrate 1120. The bottom cover 1152 may include a receiving portion 1153, but the present invention is not limited thereto.

Here, the optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, horizontal and vertical prism sheets, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a poly methy methacrylate (PMMA) material, and the light guide plate may be removed. The diffusion sheet diffuses the incident light, the horizontal and vertical prism sheets focus the incident light onto the display area, and the brightness enhancement sheet reuses the lost light to improve the brightness.

18 is a perspective view of a lighting apparatus according to an embodiment.

Referring to FIG. 18, the lighting device 1500 includes a case 1510, a light emitting module 1530 installed in the case 1510, and a connection terminal installed in the case 1510 and receiving power from an external power source. 1520).

The case 1510 may be formed of a material having good heat dissipation, for example, may be formed of a metal material or a resin material.

The light emitting module 1530 may include a module substrate 1532 and a light emitting device 100 according to an embodiment mounted on the module substrate 1532. The plurality of light emitting devices 100 may be arranged in a matrix form or spaced apart at predetermined intervals. The light emitting devices may be mounted on the module substrate 1532 in a flip manner or arrayed into the light emitting device packages according to the embodiment.

The module substrate 1532 may be a circuit pattern printed on an insulator, for example, a resin-based printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB And the like.

In addition, the module substrate 1532 may be formed of a material that reflects light efficiently, or a surface may be coated with a color, for example, white, silver, etc., in which the light is efficiently reflected.

At least one light emitting device package 200 may be mounted on the module substrate 1532. Each of the light emitting device packages 200 may include at least one light emitting diode (LED) chip. The LED chip may include a colored light emitting diode emitting red, green, blue or white colored light, and a UV emitting diode emitting ultraviolet (UV) light.

The light emitting module 1530 may be arranged to have a combination of various light emitting device packages 200 to obtain color and luminance. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be combined to secure high color rendering (CRI).

The connection terminal 1520 may be electrically connected to the light emitting module 1530 to supply power. The connection terminal 1520 is inserted into and coupled to an external power source in a socket manner, but is not limited thereto. For example, the connection terminal 1520 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by a wire.

In one embodiment, a method of manufacturing a light emitting device includes: forming a first pattern portion on a first surface of a substrate; Forming a light emitting structure on the substrate, the light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; Etching to expose a portion of the first conductive semiconductor layer; Forming an electrode layer on the light emitting structure; Forming an insulating layer on the electrode layer and the light emitting structure; Forming a first electrode on the first conductive semiconductor layer and a second electrode on the electrode layer; Forming a first connection electrode on the first electrode and a second connection electrode on the second electrode; And forming a support member on the insulating layer to have a height of upper surfaces of the first and second connection electrodes. When the support member is formed, etching the second surface of the substrate to form a second pattern portion, and the support member includes a ceramic-based heat spreader.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments can be combined and modified by other persons having ordinary skill in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

11: first pattern portion, 11A: first projection, 11B: first recessed portion, 12: second pattern portion, 12A: second projection, 12B: second recessed portion, 13: fine uneven pattern, 100: light emitting element 111: substrate, 113: first semiconductor layer, 115: first conductive semiconductor layer, 117: active layer, 119: second conductive semiconductor layer, 120: light emitting structure, 131: electrode layer, 133: insulating layer, 135: First electrode, 137: second electrode, 141: first connection electrode, 143: second connection electrode, 151, 152, 152A: support member, 170: module substrate, 200: light emitting device package

Claims (21)

A first pattern portion having a first recessed portion between the plurality of first protrusions and the plurality of first protrusions on a first surface, and a second recessed portion between the plurality of second protrusions and the plurality of second protrusions on a second surface A translucent substrate including a second pattern portion having a portion;
A first conductive semiconductor layer disposed under the first surface of the substrate; The second conductive semiconductor layer; A light emitting structure including an active layer disposed between the first semiconductor layer and the second conductive semiconductor layer;
A first electrode disposed under the first conductive semiconductor layer;
An electrode layer disposed under the second conductive semiconductor layer;
A second electrode disposed under the electrode layer;
A first connection electrode disposed under the first electrode;
A second connection electrode disposed under the second electrode; And
A support member disposed around the first electrode and the second electrode,
At least one of the plurality of second protrusions is disposed to overlap at least a portion of the first protrusion in the vertical direction. The method of claim 1,
The support member is disposed around the first and second connection electrode. The light emitting device of claim 1, wherein the first surface and the second surface of the substrate are opposite to each other, and the first protrusion and the second protrusion protrude in the same direction. The light emitting device of claim 3, wherein the first protrusion and the second protrusion protrude in a direction opposite to the light emitting structure. The light emitting device of claim 3, wherein the first protrusion and the second protrusion have the same shape. The light emitting device of claim 3, wherein at least one of the first protrusion and the second protrusion has a hemispherical shape. The light emitting device of claim 1, wherein the central axis of at least one of the plurality of second protrusions is disposed on the same line as the central axis of at least one of the plurality of first protrusions. The light emitting device of claim 1, wherein a central axis of at least one of the plurality of first protrusions is disposed to correspond in a vertical direction to a second concave portion between the second protrusions. The light emitting device of claim 1, wherein the second protrusion is spaced apart from the central axis of the first protrusion in the range of 1 μm to 1.6 μm. The light emitting device of claim 1, wherein a width of the first protrusion is wider than an interval between adjacent first protrusions. The light emitting device of claim 10, wherein a width of the second protrusion is wider than an interval between adjacent second protrusions. The light emitting device of claim 10, wherein a height of the first protrusion is smaller than a width of the first protrusion, and a height of the second protrusion is smaller than a width of the first protrusion. The light emitting device of claim 10, wherein a height of the first protrusion and the second protrusion is 0.8 μm to 2.5 μm. The light emitting device of claim 10, wherein a ratio of the width of the first protrusion to the width of the first recess is in the range of 1: 1 to 4: 2. The light emitting device of claim 10, wherein the ratio of the height of the first protrusion to the width of the first recess is in the range of 1: 1 to 1: 1/3. The light emitting device of claim 1, further comprising a fine concave-convex pattern on at least a portion of the second surface of the substrate, wherein the minute concave-convex pattern is smaller than the second protrusion. The light emitting device of claim 1 or 16, further comprising a phosphor layer on the substrate. The light emitting device of claim 17, wherein the phosphor layer is further formed on at least a portion of a side surface of the light emitting structure. The method of claim 1, wherein the support member comprises a heat spreader added in the insulating resin, the heat spreader is an oxide, nitride, fluoride, having at least one of Al, Cr, Si, Ti, Zn, Zr, And sulfides;
The lower surface of the support member is disposed on the same horizontal plane as the lower surface of the first connection electrode and the second connection electrode. The light emitting device of claim 1, wherein the substrate has a thickness in a range of 120 μm to 500 μm. The light emitting device according to any one of claims 1 to 9; And
A module substrate having a first pad and a second pad, on which the first connection electrode and the second connection electrode of the light emitting device are mounted;
And a bottom surface of the first connection electrode, the second connection electrode, and the support member of the light emitting device include the same distance as the top surface of the module substrate.

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