KR101262509B1 - Light emitting device, light emitting module and fabricating method for light emitting device - Google Patents

Abstract

Embodiments relate to a light emitting device, a light emitting module, and a light emitting device manufacturing method.
The light emitting device according to the embodiment may include a first conductive semiconductor layer; The second conductive semiconductor layer; A light emitting structure including an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer; A first electrode under the first conductive semiconductor layer; A reflective electrode layer disposed under the second conductive semiconductor layer; A second electrode under the reflective electrode layer; A support member disposed below the first conductive semiconductor layer and the reflective electrode layer and disposed around the first and second electrodes; A first connection electrode disposed at least partially within the support member and formed under the first electrode; And a second connection electrode disposed at least partially within the support member and formed under the second electrode, wherein the support member includes a ceramic heat spreader.

Description

LIGHT EMITTING DEVICE, LIGHT EMITTING MODULE AND FABRICATING METHOD FOR LIGHT EMITTING DEVICE}

The embodiment relates to a light emitting device, a light emitting module, and a manufacturing method of the light emitting device.

III-V nitride semiconductors (group III-V nitride semiconductors) are widely recognized as key materials for light emitting devices such as light emitting diodes (LEDs) and laser diodes (LD) due to their physical and chemical properties. Ⅲ-Ⅴ nitride semiconductor is made of a semiconductor material having a compositional formula of normal _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1).

Light emitting diodes (LEDs) are a type of semiconductor device that transmits and receives signals by converting electricity into infrared rays or light using characteristics of a compound semiconductor.

 LEDs or LDs using such nitride semiconductor materials are widely used in light emitting devices for obtaining light, and have been applied to light sources of various products such as keypad light emitting units, display devices, electronic displays, and lighting devices of mobile phones.

The embodiment provides a new light emitting device.

The embodiment provides a wafer level packaged light emitting device.

The embodiment provides a light emitting device including a support member having a ceramic additive around a first electrode and a second electrode, and a method of manufacturing the same.

The embodiment provides a light emitting module, a light emitting device package and a lighting device having a light emitting device.

The light emitting device according to the embodiment may include a first conductive semiconductor layer; The second conductive semiconductor layer; A light emitting structure including an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer; A first electrode under the first conductive semiconductor layer; A reflective electrode layer disposed under the second conductive semiconductor layer; A second electrode under the reflective electrode layer; A support member disposed below the first conductive semiconductor layer and the reflective electrode layer and disposed around the first and second electrodes; A first connection electrode disposed at least partially within the support member and formed under the first electrode; And a second connection electrode disposed at least partially within the support member and formed under the second electrode, wherein the support member includes a ceramic heat spreader.

The light emitting module according to the embodiment includes the above light emitting device; And a module substrate including a first pad and a second pad, wherein the light emitting devices are arrayed on the module substrate, and a first connection electrode of the light emitting device is connected to the first pad of the module substrate. The second connection electrode of the light emitting device is connected to the two pads.

A method of manufacturing a light emitting device according to the embodiment includes: forming a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a substrate; Etching to expose a portion of the first conductive semiconductor layer; Forming a reflective electrode layer on the light emitting structure; Forming an insulating layer on the reflective electrode layer and the light emitting structure; Forming a first electrode on the first conductive semiconductor layer and a second electrode on the reflective electrode layer; Forming a first connection electrode on the first electrode and a second connection electrode on the second electrode; And forming a support member on the insulating layer to have a height of upper surfaces of the first and second connection electrodes. Removing the substrate when the support member is formed; The support member includes a ceramic heat spreader.

The embodiment can improve the mounting process of the light emitting device in the flip method.

The embodiment can provide a light emitting device packaged at the wafer level, thereby eliminating the packaging process, thereby reducing the manufacturing process.

The embodiment can improve the light extraction efficiency of the light emitting device.

The embodiment can improve the heat radiation efficiency of the light emitting device.

The embodiment can improve the reliability of the light emitting device, the display device, and the lighting device having the light emitting device mounted in a flip method.

1 is a side sectional view of a light emitting device according to a first embodiment.
FIG. 2 is a bottom view of the light emitting device of FIG. 1.
3 to 12 are views illustrating a manufacturing process of the light emitting device according to the first embodiment.
13 is a side cross-sectional view of a light emitting module in an embodiment.
14 is a side cross-sectional view of a light emitting device according to the second embodiment.
15 is a side cross-sectional view of a light emitting device according to the third embodiment.
16 and 17 are side cross-sectional views and a bottom view of the light emitting device according to the fourth embodiment.
18 and 19 are side cross-sectional views and a bottom view of the light emitting device according to the fifth embodiment.
20 is a side cross-sectional view showing a light emitting device according to the sixth embodiment.
21 is a side sectional view showing a light emitting device according to the seventh embodiment.
22 is a side sectional view showing a light emitting device according to an eighth embodiment.
23 is a side sectional view showing a light emitting device according to the ninth embodiment.
FIG. 24 is a diagram illustrating an example of a reflective electrode layer and a second electrode pad of FIG. 23.
FIG. 25 is a diagram illustrating an example of a second electrode bonding layer of FIG. 23.
FIG. 26 is a diagram illustrating an example of the first electrode bonding layer of FIG. 23.
FIG. 27 is a diagram illustrating another example of the second electrode bonding layer of FIG. 23.
28 is a view showing a light emitting device package having a light emitting device according to the embodiment.
29 is a diagram illustrating a display device according to an exemplary embodiment.
30 is a diagram illustrating another example of a display device according to an exemplary embodiment.
31 is a view showing a lighting apparatus according to an embodiment.

In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be formed "on" or "under" a substrate, each layer The terms " on "and " under " include both being formed" directly "or" indirectly " Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.

Hereinafter, the present invention will be described with reference to the accompanying drawings.

1 is a side sectional view showing a light emitting device according to the first embodiment, and FIG. 2 is a view showing an example of a bottom view of the light emitting device of FIG.

1 and 2, the light emitting device 100 may include a first conductive semiconductor layer 115, an active layer 117, a second conductive semiconductor layer 119, a reflective electrode layer 131, and an insulating layer 133. ), A first electrode 135, a second electrode 137, a first connection electrode 141, a second connection electrode 143, and a support member 151.

An upper surface of the light emitting device 100 is an upper surface of the first conductive semiconductor layer 115, and a lower surface of the light emitting device 100 is a lower surface of the support member 151. An upper surface of the first conductive semiconductor layer 115 and a lower surface of the support member 151 correspond to opposite surfaces.

The first conductive semiconductor layer 115, the active layer 117, and the second conductive semiconductor layer 119 may be defined as the light emitting structure 120. The light emitting structure 120 includes III-V compound semiconductor includes a -5, for example, _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1 It has a semiconductor having a composition formula), and can emit a predetermined peak wavelength within the wavelength range of the ultraviolet band to the visible light band.

The first conductive semiconductor layer 115 is implemented as a Group III-V compound semiconductor doped with a first conductive dopant, and the first conductive semiconductor layer 115 is an N-type semiconductor layer. The conductive dopant is an N-type dopant and includes Si, Ge, Sn, Se, Te.

The first conductive semiconductor layer 115 may have a super lattice structure in which at least two pairs of different semiconductor layers are alternately stacked, and the super lattice structure may be an InGaN / GaN super lattice structure or an AlGaN / GaN super lattice structure. It may include a lattice structure and reduce defects transmitted to the active layer 117. Each layer of the super lattice structure may be laminated to a thickness of several A or more.

A first conductive clad layer may be formed between the first conductive semiconductor layer 115 and the active layer 117. The first conductive clad layer may be formed of a GaN-based semiconductor, and the band gap may be formed to be greater than or equal to the band gap of the active layer 117. The first conductive clad layer serves to constrain the carrier.

An active layer 117 is disposed between the first conductive semiconductor layer 115 and the second conductive semiconductor layer 119, and the active layer 117 includes a single quantum well, a multiple quantum well (MQW), and a quantum wire. (quantum wire) or a quantum dot (optional) structure optionally includes a period of the well layer and the barrier layer. The well layer includes a composition formula of In _x Al _y Ga _{1 -x- y} N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1), and the barrier layer is In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) may be included.

The period of the well layer / barrier layer may be formed in one or more cycles using, for example, a laminated structure of InGaN / GaN, AlGaN / GaN, InGaN / AlGaN, InGaN / InGaN. The barrier layer may be formed of a semiconductor material having a band gap higher than that of the well layer.

A second conductive semiconductor layer 119 is formed below the active layer 117. The second conductive semiconductor layer 119 may be formed of any one of a semiconductor doped with a second conductive dopant, for example, a compound semiconductor such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, or AlInN. The second conductive semiconductor layer 119 is a P-type semiconductor layer, and the second conductive dopant is a P-type dopant and may include Mg, Zn, Ca, Sr, and Ba.

The second conductive semiconductor layer 119 may include a superlattice structure, and the superlattice structure may include an InGaN / GaN superlattice structure or an AlGaN / GaN superlattice structure. The superlattice structure of the second conductive semiconductor layer 119 may abnormally diffuse the current included in the voltage to protect the active layer 117.

In addition, the first conductive semiconductor layer 115 may be a P-type semiconductor layer, and the second conductive semiconductor layer 119 may be an N-type semiconductor layer. A third conductive semiconductor layer having a polarity opposite to that of the second conductive type may be formed on the second conductive semiconductor layer 119.

The light emitting device 100 may define the first conductive semiconductor layer 115, the active layer 117, and the second conductive semiconductor layer 119 as a light emitting structure 120, and the light emitting structure may be NP. It can be implemented with any one of a junction structure, a PN junction structure, an NPN junction structure, and a PNP junction structure. Herein, P is a P-type semiconductor layer, and N is an N-type semiconductor layer, and the - indicates a structure in which the P-type semiconductor layer and the N-type semiconductor layer are in direct contact or indirect contact. Hereinafter, for convenience of description, the uppermost layer of the light emitting structure 120 will be described as the second conductive semiconductor layer 119.

The reflective electrode layer 131 is formed under the second conductive semiconductor layer 119. The reflective electrode layer 131 includes at least one of an ohmic contact layer, a reflective layer, a diffusion barrier layer, and a protective layer.

The reflective electrode layer 131 may be formed of a structure of an ohmic contact layer / reflective layer / diffusion prevention layer / protective layer, a structure of a reflective layer / diffusion prevention layer / protective layer, or may be formed of a structure of an ohmic contact layer / reflective layer / protective layer It may be formed of a reflective layer / diffusion preventing layer or a reflective layer.

The ohmic contact layer may contact the bottom of the second conductive semiconductor layer 119, and the contact area of the ohmic contact layer may be 70% or more of the lower surface area of the second conductive semiconductor layer 119. The ohmic contact layer may include indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IZAZO), indium gallium zinc oxide (IGZO), and indium gallium tin oxide (IGTO). Selected from aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), SnO, InO, INZnO, ZnO, IrOx, RuOx, NiO, Ni, Cr, and optional compounds or alloys thereof , At least one layer. The ohmic contact layer may have a thickness of about 1 to about 1,000 mm 3.

The reflective layer may be selected from a material having a reflectance of 70% or more under the ohmic contact layer, for example, a metal of Al, Ag, Ru, Pd, Rh, Pt, Ir, or an alloy of two or more of the above metals. The metal of the reflective layer may be in ohmic contact under the second conductive semiconductor layer 119, in which case the ohmic contact layer may not be formed. The thickness of the reflective layer may be formed to 1 ~ 10,000Å.

The diffusion barrier layer may be selected from Au, Cu, Hf, Ni, Mo, V, W, Rh, Ru, Pt, Pd, La, Ta, Ti and two or more alloys thereof. The diffusion barrier layer prevents interlayer diffusion at the boundary between different layers. The thickness of the diffusion barrier layer may be formed to 1 ~ 10,000 ~.

The protective layer may be selected from Au, Cu, Hf, Ni, Mo, V, W, Rh, Ru, Pt, Pd, La, Ta, Ti and two or more alloys thereof, and the thickness is 1 to 10,000 Å. It can be formed as.

The reflective electrode layer 131 may include a laminated structure of a transparent electrode layer / reflective layer, and the transparent electrode layer may include indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), and indium aluminum zinc oxide), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), SnO, InO, INZnO, ZnO, IrOx , RuOx may be selected from the group. A reflective layer may be formed below the transparent electrode layer, and the reflective layer may include a structure in which a first layer having a first refractive index and a second layer having a second refractive index are alternately stacked in at least two pairs. The second refractive index is different from each other, and the first layer and the second layer may be formed of a material between 1.5 and 2.4, for example, a conductive or insulating material, and such a structure may be defined as a distributed bragg reflection (DBR) structure.

A light extraction structure such as roughness may be formed on a surface of at least one of the second conductive semiconductor layer 119 and the reflective electrode layer 131, and the light extraction structure may change a critical angle of incident light. Therefore, the light extraction efficiency can be improved.

The first electrode 135 may be formed under a portion A1 of the first conductive semiconductor layer 115, and the second electrode 137 may be formed under a portion of the reflective electrode layer 131. A first connection electrode 141 is formed below the first electrode 135, and a second connection electrode 143 is formed below the second electrode 137.

The first electrode 135 is electrically connected to a partial region A1 of the first conductive semiconductor layer 115. The first electrode 135 may include an electrode pad, but is not limited thereto.

The first electrode 135 is spaced apart from side surfaces of the active layer 117 and the second conductive semiconductor layer 119 and is formed to have a smaller area than the partial area A1 of the first conductive semiconductor layer 115. Can be.

The second electrode 137 may be in physical or / and electrical contact with the second conductive semiconductor layer 119 through the reflective electrode layer 131. The second electrode 137 includes an electrode pad.

The first electrode 135 and the second electrode 137 include at least one of an adhesive layer, a reflective layer, a diffusion barrier layer, and a bonding layer. The adhesive layer is in ohmic contact under a portion A1 of the first conductive semiconductor layer 115, and may be formed of Cr, Ti, Co, Ni, V, Hf, and an optional alloy thereof. May be formed to 1 ~ 1,000Å. The reflective layer is formed under the adhesive layer, the material may be formed of Ag, Al, Ru, Rh, Pt, Pd and an optional alloy thereof, the thickness may be formed of 1 ~ 10,000Å. The diffusion barrier layer is formed under the reflective layer, and the material may be formed of Ni, Mo, W, Ru, Pt, Pd, La, Ta, Ti, and optional alloys thereof, the thickness of which is 1 to 10,000Å. It includes. The bonding layer is a layer bonded to the first connection electrode 141, and the material may be formed of Al, Au, Cu, Hf, Pd, Ru, Rh, Pt, and an optional alloy thereof. May be formed to 1 ~ 10,000Å. Here, the reflective layers of the first electrode 135 and the second electrode 137 may not be formed.

The first electrode 135 and the second electrode 137 may have the same stacked structure or different stacked structures. The stack structure of the second electrode 137 may be smaller than that of the first electrode 135. For example, the first electrode 135 may be formed of an adhesive layer / reflection layer / diffusion prevention layer / bonding layer or an adhesive layer /. The diffusion preventing layer / bonding layer may be formed, and the second electrode 137 may be formed of an adhesive layer / reflective layer / diffusion preventing layer / bonding layer or an adhesive layer / diffusion preventing layer / bonding layer.

The upper surface area of the second electrode 137 may be the same area as the lower surface area of the reflective electrode layer 131 or at least larger than the upper surface area of the second connection electrode 143.

At least one of the first electrode 135 and the second electrode 137 may further have a current diffusion pattern such as an arm or finger structure branched from the pad. In addition, one or more electrode pads of the first electrode 135 and the second electrode 137 may be formed, but are not limited thereto.

The first connection electrode 141 and the second connection electrode 143 provide a lead function for supplying power and a heat dissipation path. The first connection electrode 141 and the second connection electrode 143 may have a columnar shape, and may include, for example, a shape such as a spherical shape, a circular column, or a polygonal column or a random shape. Here, the polygonal pillar may be conformal or not conformal, but is not limited thereto. An upper surface or a lower surface of the first connection electrode 141 and the second connection electrode 143 may include a circle or a polygon, but is not limited thereto. Lower surfaces of the first connection electrode 141 and the second connection electrode 143 may be formed to have different areas from the upper surface. For example, the lower surface area may be larger or smaller than the upper surface area.

At least one of the first connection electrode 141 and the second connection electrode 143 may be formed smaller than the width of the lower surface of the light emitting structure 120, and larger than the width or diameter of the lower surface of each of the electrodes 135 and 137. Can be formed.

The diameter or width of the first connection electrode 141 and the second connection electrode 143 may be formed to 1㎛ ~ 100,000㎛, the height may be formed of 1㎛ ~ 100,000㎛. Here, the thickness H1 of the first connection electrode 141 may be longer than the thickness H3 of the second connection electrode 143, and the first connection electrode 141 and the second connection may be formed. The lower surface of the electrode 143 may be disposed on the same plane (ie, the horizontal surface).

The first connection electrode 141 and the second connection electrode 143 may be formed as a single layer using any one metal or alloy, and the width and height of the single layer may be formed to be 1 μm to 100,000 μm. For example, the thickness of the single layer layer may be formed to a thickness thicker than the thickness of the second electrode 143.

The first connection electrode 141 and the second connection electrode 143 are Ag, Al, Au, Cr, Co, Cu, Fe, Hf, In, Mo, Ni, Si, Sn, Ta, Ti, W and these It may be formed of any one of an optional alloy of metal. The first connection electrode 141 and the second connection electrode 143 may be formed of In, Sn, Ni, Cu, and an optional alloy thereof to improve adhesion between the first electrode 135 and the second electrode 137. It may be plated with either metal. At this time, the plating thickness is 1 ~ 100,000Å is applicable.

A plating layer may be further formed on surfaces of the first connection electrode 141 and the second connection electrode 143, and the plating layer may be formed of Tin or an alloy thereof, Ni or an alloy thereof, or a Tin-Ag-Cu alloy. And, the thickness may be formed to 0.5㎛ ~ 10㎛. Such a plating layer can improve the bonding with other bonding layers.

The insulating layer 133 may be formed under the reflective electrode layer 131. The insulating layer 133 is formed on a lower surface of the second conductive semiconductor layer 119, side surfaces of the second conductive semiconductor layer 119 and the active layer 117, and the first conductive semiconductor layer 115. The lower surface of the partial region A1 may be formed. The insulating layer 133 is formed in the lower region of the light emitting structure 120 except for the reflective electrode layer 131, the first electrode 135, and the second electrode 137. The lower part of the to be electrically protected.

The insulating layer 133 includes an insulating material or an insulating resin formed of at least one of an oxide, nitride, fluoride, and sulfide having at least one of Al, Cr, Si, Ti, Zn, and Zr. The insulating layer 133 may be selectively formed of, for example, SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , or TiO ₂ . The insulating layer 133 may be formed as a single layer or a multilayer, but is not limited thereto. When the insulating layer 133 forms a metal structure for flip bonding under the light emitting structure 120, the insulating layer 133 is formed on a lower surface of the light emitting structure 120 to prevent an interlayer short of the light emitting structure 120. It is formed to.

The insulating layer 133 may not be formed on the bottom surface of the reflective electrode layer 131, but may be formed only on the surface of the light emitting structure 120 of the insulating layer 133. This is because an insulating support member 151 is formed on the lower surface of the reflective electrode layer 131, so that the insulating layer 133 may not extend to the lower surface of the reflective electrode layer 131.

The insulating layer 133 may have a DBR structure in which a first layer and a second layer having different refractive indices are alternately arranged, and the first layer is formed of SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , Any one of TiO ₂ , and the second layer may be formed of any one of materials other than the first layer.

The insulating layer 133 is formed to a thickness of 100 ~ 10,0001, each layer may be formed of a thickness of 1 ~ 50,000Å or 100 ~ 10,000Å for each layer when formed in a multi-layer structure. Here, in the insulating layer 133 of the multilayer structure, the thickness of each layer may change the reflection efficiency according to the emission wavelength. In this case, the reflective electrode layer may not be formed.

The material of the first connection electrode 141 and the second connection electrode 143 is Ag, Al, Au, Cr, Co, Cu, Fe, Hf, In, Mo, Ni, Si, Sn, Ta, Ti, W and their optional alloys. In addition, the first connection electrode 141 and the second connection electrode 143 may be formed of In, Sn, Ni, Cu, and alloys thereof for adhesion between the first electrode 135 and the second electrode 137. It may include a plating layer using, the thickness of the plating layer may be formed to 1 ~ 100,000 ~. The first connection electrode 141 and the second connection electrode 143 may be used as a single metal such as solder balls or metal bumps, but are not limited thereto.

The support member 151 is used as a support layer for supporting the light emitting device 100. The support member 151 is formed of an insulating material, and the insulating material is formed of a resin layer such as silicon or epoxy. As another example, the insulating material may include a paste or an insulating ink. The insulating material is polyacrylate resin, epoxy resin, phenolic resin, polyamides resin, polyimides rein, unsaturated polyesters resin, polyphenylene ether resin (PPE), polyphenilene oxide resin (PPO), polyphenylenesulfides resin, cyanate ester resin, benzocyclobutene (BCB), Polyamido-amine Dendrimers (PAMAM), and Polypropylene-imine, Dendrimers (PPI), and resins including PAMAM-OS (organosilicon) with PAMAM internal structure and organic-silicon exterior, alone or in combination thereof. Can be. The fraud support member 151 may be formed of a material different from that of the insulating layer 133.

At least one of compounds such as oxides, nitrides, fluorides, and sulfides having at least one of Al, Cr, Si, Ti, Zn, and Zr may be added to the support member 151. Here, the compound added in the support member 151 may be a heat spreader, and the heat spreader may be used as powder particles, granules, fillers, and additives of a predetermined size. It will be described as a diffusion agent. Here, the heat spreader may be an insulating material or a conductive material, the size is used in 1Å ~ 100,000Å, it may be formed in the size of 1,000Å ~ 50,000Å for heat diffusion efficiency. Particle shape of the heat spreader may include a spherical or irregular shape, but is not limited thereto.

The heat spreader comprises a ceramic material, the ceramic material is a low temperature co-fired ceramic (LTCC), high temperature co-fired ceramic (HTCC), alumina (alumina) co-fired , Quartz, calcium zirconate, forsterite, SiC, graphite, fusedsilica, mullite, cordierite, zirconia, beryllia ), And at least one of aluminum nitride. The ceramic material may be formed of a metal nitride having higher thermal conductivity than nitride or oxide among insulating materials such as nitride or oxide, and the metal nitride may include, for example, a material having a thermal conductivity of 140 W / mK or more. The ceramic material may be, for example, SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , BN, Si ₃ N ₄ , SiC (SiC-BeO), BeO, It may be a ceramic series such as CeO, AlN. The thermally conductive material may comprise a component of C (diamond, CNT).

The support member 151 may be formed in a single layer or multiple layers, but is not limited thereto. Since the support member 151 includes a powder of ceramic material therein, the strength of the support member 151 may be improved, and thermal conductivity may also be improved.

The heat spreader included in the support member 151 may be added at a content ratio of about 1 to 99 wt /%, and may be added at a content ratio of 50 to 99 wt% for efficient heat diffusion. By adding a heat spreader to the support member 151, the thermal conductivity in the interior can be further improved. In addition, the thermal expansion coefficient of the support member 151 is 4-11 [x10 ⁶ / ° C.], and the thermal expansion coefficient has the same or similar thermal expansion coefficient as that of the sapphire substrate. The bending of the wafer due to the difference in thermal expansion with respect to the light emitting structure 120 formed therein or the generation of defects can be suppressed, thereby preventing the reliability of the light emitting device from being lowered.

Here, an area of the lower surface of the support member 151 may be formed to be substantially the same as an upper surface of the light emitting structure 120, that is, an area of the upper surface of the first conductive semiconductor layer 115. In addition, the lower surface of the support member 151 may be formed to have the same width as the upper surface of the first conductive semiconductor layer 115. Referring to FIG. 2, the length of the first side D1 of the support member 151 is substantially the same as the length of the first side of the light emitting structure 120 of FIG. 1, and the length of the second side D2 is It may be formed substantially the same as the length of the second side of the light emitting structure 120 of FIG. In addition, the distance D5 between the first connection electrode 141 and the second connection electrode 143 is a distance between each electrode pad, and may be spaced at least 1/2 of the length of one side of the light emitting device 100.

The lower surface of the support member 151 may be formed as a substantially flat surface or an irregular surface, but is not limited thereto.

The thickness T1 of the first region of the support member 151 may be formed at least thicker than the thickness of the second connection electrode 143. As another example, the thickness T1 of the first region of the support member 151 may be formed to be thinner than the thickness H2 of the second connection electrode 143, which is a thickness of the insulating layer 133. By forming a thickness thicker than the thickness of the second connection electrode 137, the thickness of the support member 151 may be reduced. The thickness T2 of the second region of the support member 151 may be thicker than the thickness T2 of the first connection electrode 141. The thickness T1 of the support member 151 may be formed in a range of 1 μm to 100,000 μm, and may be formed in a range of 50 μm to 1,000 μm as another example.

The lower surface of the support member 151 is formed lower than the lower surfaces of the first electrode 135 and the second electrode 137, and the lower surface of the first connection electrode 141, the second connection electrode 143. May be disposed on the same plane (ie, horizontal plane) as the lower surface of

The support member 151 contacts the circumferential surfaces of the first electrode 135, the second electrode 137, the first connection electrode 141, and the second connection electrode 143. Accordingly, heat conducted from the first electrode 135, the second electrode 137, the first connection electrode 141, and the second connection electrode 143 is diffused through the support member 151, and radiates heat. Can be. At this time, the thermal conductivity of the support member 151 is improved by the heat spreading agent therein, and heat radiation is performed through the entire surface. Therefore, the light emitting device 100 may improve reliability by heat.

In addition, the side surface of the support member 151 may be disposed on the same plane (that is, vertical surface) with the side surfaces of the light emitting structure 120 and the substrate 111.

The light emitting device 100 is mounted in a flip manner, and since most of the light is emitted toward the top surface of the light emitting structure 120, and some light is emitted through the side surface of the light emitting structure 120, Light loss caused by the first electrode 135 and the second electrode 137 can be reduced. Accordingly, light extraction efficiency and heat radiation efficiency of the light emitting device 100 may be improved.

3 to 12 are views illustrating a manufacturing process of the light emitting device according to the first embodiment. The following fabrication process is shown as an individual device for ease of description, but may be fabricated at the wafer level, and the individual device may be described as being fabricated through the process described below. In addition, the present invention is not limited to the manufacturing process described below, and may be manufactured in an additional process or fewer processes in a specific process of each process.

Referring to FIG. 3, the substrate 111 may be loaded onto growth equipment, and a compound semiconductor of group 2 to 6 elements may be formed in a layer or pattern form thereon. The substrate 111 is used as a growth substrate.

Here, the substrate 111 may be made of a light transmissive substrate, an insulating substrate or a conductive substrate, for example, sapphire substrate (Al ₂ 0 ₃ ), GaN, SiC, ZnO, Si, GaP, InP, Ga ₂ 0 ₃ , and GaAs and the like. A light extraction structure such as an uneven pattern may be formed on the upper surface of the substrate 111. The uneven pattern may change the critical angle of the light to improve the light extraction efficiency.

The growth equipment may be an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), dual-type thermal evaporator sputtering, metal organic chemical vapor (MOCVD) deposition) and the like, and the like is not limited to such equipment.

A first semiconductor layer 113 may be formed on the substrate 111, and the first semiconductor layer 113 may be formed using a compound semiconductor of a group 3 to 5 group element. The first semiconductor layer 113 may be formed as a buffer layer to reduce a difference in lattice constant from the substrate 111. The first semiconductor layer 113 may be formed of an undoped semiconductor layer, and the undoped semiconductor layer may be formed of a GaN-based semiconductor that is not intentionally doped. The first semiconductor layer 113 may be a semiconductor layer doped with a first conductive dopant.

The light emitting structure 120 may be formed on the first semiconductor layer 113. The light emitting structure 120 may be formed in the order of the first conductive semiconductor layer 115, the active layer 117, and the second conductive semiconductor layer 119.

The first conductive semiconductor layer 115 is a compound semiconductor of a group III-V group element doped with a first conductive dopant, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like can be selected. When the first conductive type is an N type semiconductor, the first conductive type dopant includes an N type dopant such as Si, Ge, Sn, Se, Te, or the like. The first conductive semiconductor layer 115 may be formed as a single layer or a multilayer, but is not limited thereto. The first conductive semiconductor layer 115 may further include a superlattice structure having different materials, but is not limited thereto.

An active layer 117 is formed on the first conductive semiconductor layer 115, and the active layer 117 may include at least one of a single quantum well structure, a multiple quantum well structure, a quantum line structure, and a quantum dot structure. . The active layer 117 is a Group III -5 compound of an element using a semiconductor material _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1 Cycle of the well layer and barrier layer having a composition formula), e.g. It is not limited thereto.

A conductive cladding layer may be formed on or under the active layer 117, and the conductive cladding layer may be formed of an AlGaN-based semiconductor. The barrier layer of the active layer 117 may be higher than the band gap of the well layer, and the conductive clad layer may be formed higher than the band gap of the barrier layer.

The second conductive semiconductor layer 119 is formed on the active layer 117, and the second conductive semiconductor layer 119 is a compound semiconductor of a group III-V group element doped with a second conductive dopant. GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like. When the second conductive type is a P type semiconductor, the second conductive type dopant includes a P type dopant such as Mg and Zn. The second conductive semiconductor layer 119 may be formed as a single layer or a multilayer, but is not limited thereto. The second conductive semiconductor layer 119 may further include a superlattice structure having different materials, but is not limited thereto.

The first conductive semiconductor layer 115, the active layer 117, and the second conductive semiconductor layer 119 may be defined as a light emitting structure 120. In addition, a third conductive semiconductor layer, eg, an N-type semiconductor layer, having a polarity opposite to that of the second conductive type may be formed on the second conductive semiconductor layer 119. Accordingly, the light emitting structure 120 may be formed of at least one of an N-P junction, a P-N junction, an N-P-N junction, and a P-N-P junction structure.

An uneven pattern may be formed on a surface of at least one of the layers of the light emitting structure 120, and the uneven pattern may be formed by a wet or / and dry etching method, but is not limited thereto. Since the uneven pattern is formed on the upper surface of the second conductive semiconductor layer 119 of the light emitting structure 120, it may be used as a light extraction structure.

Referring to FIG. 4, etching is performed on a portion A1 of the light emitting structure 120. A portion of the light emitting structure 120 may be exposed to the first conductive semiconductor layer 115, and an exposed portion of the first conductive semiconductor layer 115 may be formed on the top surface of the active layer 117. It can be formed at a lower height.

The etching process masks the upper surface area of the light emitting structure 120 in a mask pattern, and then performs dry etching on the partial area A1 of the light emitting structure 120. The dry etching may include at least one of Inductively Coupled Plasma (ICP) equipment, Reactive Ion Etching (RIE) equipment, Capacitively Coupled Plasma (CCP) equipment, and Electron Cyclotron Resonance (ECR) equipment. Another etching method may further include, but is not limited to, wet etching.

Here, the partial region A1 of the light emitting structure 120 may be set to an arbitrary region as an etching region, and the number of the regions A1 may be one or plural.

Referring to FIG. 5, the reflective electrode layer 131 is formed on the light emitting structure 120. The reflective electrode layer 131 may be formed to have a smaller area than the upper surface area of the second conductive semiconductor layer 119, which may prevent a short caused by the manufacturing process of the reflective electrode layer 131. The reflective electrode layer 131 is masked on a region spaced a predetermined distance D3 from an upper surface edge of the second conductive semiconductor layer 119 and a partial region A1 of the light emitting structure 120 with a mask. It can be deposited by sputter equipment or / and deposition equipment.

The reflective electrode layer 131 may include a metal material having a reflectance of at least 70% or at least 90%.

The reflective electrode layer 131 may be formed of a structure of an ohmic contact layer / reflective layer / diffusion prevention layer / protective layer, a structure of a reflective layer / diffusion prevention layer / protective layer, or may be formed of a structure of an ohmic contact layer / reflective layer / protective layer It may be formed as a reflective layer. The material and thickness of each layer will be referred to the description of FIG. 1.

Here, the order of the process of FIG. 4 and the process of FIG. 5 may be changed, but is not limited thereto.

Referring to FIG. 6, a first electrode 135 is formed on the first conductive semiconductor layer 115, and a second electrode 137 is formed on the reflective electrode layer 131. The first electrode 135 and the second electrode 137 may be formed by sputtering and / or deposition equipment after masking a region other than the electrode formation region with a mask, but are not limited thereto. The first electrode 135 and the second electrode 137 are Cr, Ti, Co, Ni, V, Hf, Ag, Al, Ru, Rh, Pt, Pd, Ni, Mo, W, La, Ta, Ti And optionally alloys thereof. The first electrode 135 and the second electrode 137 may be formed in multiple layers, and may include, for example, at least two layers of an adhesive layer / reflection layer / diffusion layer / bonding layer using the above materials. The first electrode 135 and the second electrode 137 may be formed in the same stacked structure in the same process, but is not limited thereto.

The second electrode 137 may be in physical contact with the reflective electrode layer 131 and the second conductive semiconductor layer 119.

Referring to FIG. 7, an insulating layer 133 is formed on the reflective electrode layer 131. The insulating layer 133 may be formed by sputtering or deposition. The insulating layer 133 is formed on an area except for the first electrode 135 and the second electrode 137, and has an upper surface of the reflective electrode layer 131 and the second conductive semiconductor layer 119. The exposed region of the first conductive semiconductor layer 115 is covered.

The insulating layer 133 includes an insulating material or an insulating resin such as oxides, nitrides, fluorides, sulfides, and the like of Al, Cr, Si, Ti, Zn, and Zr. The insulating layer 133 may be selectively formed of, for example, SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , or TiO ₂ . The insulating layer 133 may be formed as a single layer or a multilayer, but is not limited thereto.

Here, the process of forming the electrodes 135 and 137 of FIG. 6 and the process of forming the insulating layer 133 of FIG. 7 may be changed.

Referring to FIG. 8, a first connection electrode 141 is bonded on the first electrode 135, and a second connection electrode 143 is bonded on the second electrode 137. The first connection electrode 141 includes a conductive pad such as solder balls and / or metal bumps, and is bonded onto the first electrode 135. The first connection electrode 141 may be disposed in a direction perpendicular to the top surface of the first conductive semiconductor layer 115. The second connection electrode 143 includes a conductive pad such as solder balls or / and metal bumps, and is bonded onto the second electrode 137. The second connection electrode 143 may be disposed in a direction perpendicular to the top surface of the second conductive semiconductor layer 119.

Here, the thickness H1 of the first connection electrode 141 may be formed at least longer than the thickness H2 of the second connection electrode 143, and the first connection electrode 141 and the second connection may be formed. Lower surfaces of the electrodes 143 are disposed on different planes, and upper surfaces thereof are disposed on the same plane (ie, horizontal plane).

9, the support member 151 is formed on the insulating layer 133 by squeegeeing and / or dispensing.

The support member 151 is formed of an insulating support layer by adding a heat spreader to a resin material such as silicone or epoxy.

The heat spreader may include at least one of an oxide, a nitride, a fluoride, and a sulfide having a material such as Al, Cr, Si, Ti, Zn, Zr, for example, a ceramic material. The heat spreader may be defined as powder particles, granules, fillers, and additives of a predetermined size.

The heat spreader includes a ceramic material, and the ceramic material includes a low temperature co-fired ceramic (LTCC) or a high temperature co-fired ceramic (HTCC). The ceramic material may be formed of a metal nitride having higher thermal conductivity than nitride or oxide among insulating materials such as nitride or oxide, and the metal nitride may include, for example, a material having a thermal conductivity of 140 W / mK or more. The ceramic material may be SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , BN, Si ₃ N ₄ , SiC (SiC-BeO), BeO, CeO, It may be a ceramic series such as AlN. The thermally conductive material may comprise a component of C (diamond, CNT). The heat spreader may be included in the support member 151 in the range of about 1 to 99 Wt /%, so that the heat spreader may be added to 50% or more for heat diffusion efficiency.

The support member 151 may be formed by mixing a polymer material in an ink or paste, and the method of mixing the polymer material may be a ball mill, an oil ball mill, an impeller mixing, a bead mill, a basket mill. In this case, a solvent and a dispersant may be used for even dispersion, and the solvent is added for viscosity control, and 3 to 400 Cps for ink and 1000 to 1 million Cps for paste are preferable. In addition, the type is water, methanol (ethanol), ethanol (isool), isopropanol (isopropanol), butylcabitol (butylcabitol), MEK, toluene (xylene), diethylene glycol (DiethyleneGlycol; DEG) , Formamide (FA), α-terpineol (TP), γ-butyrolactone (BL), methylcellosolve (MCS), propylmethylcellulose solution (Propylmethylcellosolve; PM) may include a single or a plurality of combinations. Additionally, silane-based additives such as 1-Trimethylsilylbut-1-yne-3-ol, Allytrimethylsilane, Trimethylsilyl methanesulfonate, Trimethylsilyl tricholoracetate, Methyl trimethylsilylacetate, and Trimethylsilyl propionic acid may be added to increase interparticle bonding.

Here, in the manufacturing process, a connection electrode such as solder bumps may be manufactured and bonded in advance, and then a support member may be formed around the connection electrode. On the contrary, the insulating layer, such as ink or paste, may be printed or dispensed, cured, and then formed with a hole corresponding to the connection electrode, and then filled with a conductive material to form the connection electrode.

The support member 151 may have a thickness having the same height as the top surface of the first connection electrode 141 and the second connection electrode 143.

The support member 151 is filled around the first connection electrode 141, the second connection electrode 143, the first electrode 135, and the second electrode 137. An upper surface of the first connection electrode 141 and the second connection electrode 143 is exposed on an upper surface of the support member 151.

The support member 151 is an insulating support layer and supports the circumferences of the plurality of connection electrodes 141 and 143. That is, the plurality of connection electrodes 141 and 143 may be inserted into the support member 151.

The thickness T1 of the support member 151 may be formed such that the top surfaces of the first connection electrode 141 and the second connection electrode 143 are exposed. Here, as another example of the first and second connection electrodes 141 and 143, after the support member 151 is formed, a connection electrode hole is formed in the support member 151, and then the first and second connection electrodes are formed. Connection electrodes 141 and 143 may be formed.

The support member 151 is cured within a predetermined temperature, for example, 200 ° C. ± 100 ° C., and the curing temperature is in a range that does not affect the semiconductor layer.

Referring to FIG. 10, when the wafer manufactured as illustrated in FIG. 9 is rotated 180 degrees, the substrate 111 is disposed upward as illustrated in FIG. 10. The substrate 111 is lifted off. The lift off method may remove the substrate in a physical or / and chemical manner. The physical method may remove a laser having a predetermined wavelength through the substrate 111 (LLO: laser lift off). In the chemical method, a hole is formed in the substrate 111 to wet-etch the semiconductor layer between the substrate 111 and the first conductive semiconductor layer 115 to remove the substrate 111. 120).

10 and 11, when the substrate 111 is removed, the first semiconductor layer 113 is exposed as shown in FIG. 11, and the first semiconductor layer 113 may be removed by a wet etching method. As another example, the first semiconductor layer 113 may not be removed.

Referring to FIGS. 11 and 12, the manufactured light emitting device 100 may be packaged at a wafer level, and may be scribed, broken, and / or cut by individual chips to be provided as individual light emitting devices as shown in FIG. 12. . The light emitting device may be packaged at the wafer level, so that the light emitting device may be mounted on a module substrate by a flip bonding method without a separate wire. In addition, the light emitting device 100 may reduce light loss and improve luminance and light distribution by disposing an emission area in which light is emitted in the top and side directions of the light emitting structure 120 instead of the electrode direction.

The support member 151 may have a lower surface area that is the same as an upper surface area of the light emitting structure 120, and a thickness thereof is higher than that of each of the electrodes 135 and 137 and the lower surface of the connection electrodes 141 and 143. It may be formed to a thickness disposed on the same horizontal plane as.

13 is a view showing a light emitting module equipped with a light emitting device according to the embodiment.

Referring to FIG. 13, the light emitting device 100 is mounted on the module substrate 170 by a flip method.

The module substrate 170 has an insulating layer 172 disposed on the metal layer 171, and a first pad 173 and a second pad 174 are formed on the insulating layer 172. The pad 173 and the second pad 174 are land patterns and supply power. A protective layer 175 is formed on an area of the insulating layer 172 except for the pads 173 and 174, and the protective layer 175 includes a white or green protective layer as a solder resist layer. . The protective layer 175 reflects the light efficiently, thereby improving the amount of reflected light.

The module substrate 170 may be a printed circuit board (PCB) including a circuit pattern (not shown). However, the module substrate 170 may include a resin-based PCB, a metal core PCB (MCPCB, Metal Core PCB), a flexible PCB (FPCB, Flexible PCB) and the like, but is not limited thereto.

The first connection electrode 141 of the light emitting device 100 corresponds to the first pad 173, and the second connection electrode 143 of the light emitting device 100 corresponds to the second pad 174. do. The first pad 173 and the first connection electrode 141 are bonded by a bonding material 177, and the second pad 174 and the second connection electrode 143 are bonded to the bonding material 177. Are bonded by.

The light emitting device 100 is operated by power supplied from the first pad 173 and the second pad 174, and the generated heat is generated by the first connection electrode 141 and the second connection electrode 143. After conducting through, it may be radiated through the entire surface of the support member 151. The bottom surface of the support member 151 may be spaced apart from the top surface of the module substrate 170, and the spaced distance may be spaced apart from the thickness of the bonding material 173.

Spaces between the bottom surface of the first connection electrode 141, the second connection electrode 143, and the support member 151 of the light emitting device 100 and the top surface of the module substrate 170 may be formed at the same interval. have.

Although the configuration in which one light emitting device 100 is mounted on the module substrate 170 is disclosed, a plurality of light emitting devices may be arrayed, but the embodiment is not limited thereto.

14 is a side sectional view showing a light emitting device according to the second embodiment.

Referring to FIG. 14, the light emitting device includes a phosphor layer 161 formed on an upper surface of the light emitting structure 120 opposite to the support member 151. The phosphor layer 161 may be a fluorescent film or a coated layer, and may be formed as a single layer or multiple layers.

Phosphor is added to the phosphor layer 161 in the light transmitting resin layer. The light transmissive resin layer may include a material such as silicon or epoxy, and the phosphor may be selectively formed among YAG, TAG, Silicate, Nitride, and Oxy-nitride-based materials. The phosphor includes at least one of a red phosphor, a yellow phosphor, and a green phosphor, and excites a part of the light emitted from the active layer 115 to emit light of light having a different wavelength.

The phosphor layer 161 is formed on an upper surface S1 of the first conductive semiconductor layer 115 and a side surface S2 of the light emitting structure 120. The phosphor layer 161 may have a thickness of 1 to 100,000 μm, and as another example, a thickness of 1 to 10,000 μm.

The phosphor layer 161 may include different phosphor layers, and the different phosphor layers may include one phosphor layer of a red, yellow, or green phosphor layer, and a second layer formed on the first layer. And a phosphor layer different from the first layer. The phosphor layer 161 may be disposed with different phosphor layers in the first and second regions that do not overlap. A protective layer made of a transparent resin material for protection may be further formed on the side of the phosphor layer 161 and the light emitting structure, but is not limited thereto.

15 is a side cross-sectional view of a light emitting device according to the third embodiment.

Referring to FIG. 15, a plurality of protrusions 115A are formed on the first conductive semiconductor layer 115, and the plurality of protrusions 115A protrude in a direction opposite to the support member 151. The critical angle of light incident through the first conductive semiconductor layer 115 is changed. Accordingly, the light extraction efficiency of the light emitting device can be improved. The protrusion 115A may have a lens or polygonal structure in a stripe or matrix form. Each of the protrusions 115 includes a plurality of three-dimensional structures, for example, a polygonal horn shape.

A phosphor layer 162 is disposed on an upper surface of the first conductive semiconductor layer 115, and a lower surface of the phosphor layer 162 may be formed in an uneven shape along the protrusion 115A, and the upper surface of the first conductive semiconductor layer 115 may be flat. Or it may be formed in an uneven shape.

The phosphor layer 162 may be formed only on the upper surface or a portion of the upper surface of the first conductive semiconductor layer 115, or may be formed on the side surface of the light emitting structure 120, but is not limited thereto.

16 is a view showing a light emitting device according to a fourth embodiment, and FIG. 17 is a bottom view of FIG. 16.

16 and 17, separation grooves 152B are formed between the support members 152 and 152A, and the separation grooves 152B divide the support members 152 and 152A on both sides. The first support member 152 is disposed below one side of the light emitting structure 120 and is formed around the first connection electrode 141. The second support member 152A is disposed below the other side of the light emitting structure 120 and is formed around the second connection electrode 143.

The separation groove 152B physically and electrically separates the first support member 152 from the second support member 152A, and exposes a lower insulating layer 133.

The first support member 152 and the second support member 152A may be formed of an insulating material or a conductive material. The insulating material may be a resin material having the above-described heat spreading agent, and the conductive material may be a conductive material such as carbon or silicon carbide (SiC) or may be formed of a metal. The conductive material of the first support member 152 and the second support member 152A may be formed of a material different from that of the first connection electrode 141 and the second connection electrode 143. Here, the first support member 152 and the second support member 152A of the conductive material are separated by the separation groove 152B, thereby solving the electric short problem.

The separation groove 152B has a gap D6 between the first support member 152 and the second support member 152A, the depth of which is equal to the thickness T1 of the second support member 152A. Can be formed. The separation groove 152B prevents electrical interference between the first support member 152 and the second support member 152A.

Lower surfaces of the first supporting member 152 and the second supporting member 152A may be disposed on the same plane (ie, horizontal surface) as the lower surfaces of the first connecting electrode 141 and the second connecting electrode 143. Can be arranged. Here, even if the first support member 152 and the second support member 152A are made of a conductive material, the first support member 152 and the second support member 152A may be mounted through the first connection electrode 141 and the second connection electrode 143.

A ceramic-based insulating material may be further disposed between the first support member 152 and the second support member 152A, and the ceramic-based insulating material may be disposed between the first support member 152 and the second support member 152A. It may be disposed on the same horizontal surface as the lower surface of the support member 152A.

18 is a side cross-sectional view illustrating a light emitting device according to a fifth embodiment, and FIG. 19 is a bottom view of the light emitting device of FIG. 18.

18 and 19, the light emitting device includes a plurality of support members 153 and 153A, and the plurality of support members 153 and 153A are formed around the connection electrodes 141 and 143, respectively. The circumference of the first connection electrode 141 is covered by the first support member 153, and the circumference of the second connection electrode 143 is covered by the second support member 153A. The material of the first and second support members 153 and 153A may be an insulating material or a conductive material.

The width W3 of the first support member 153 is formed to be wider than the width of the first connection electrode 141, so that the first support member 153 is arranged together with the first connection electrode 141. Can be used as conductive and electrical conductive paths. The width W4 of the second support member 153A is formed to be wider than the width of the second connection electrode 143, so that the second support member 153A is arranged together with the second connection electrode 143. Can be used as conductive and electrical conductive paths.

An interval D7 between the first support member 153 and the second support member 153A may be spaced at least 1/2 of a length of one side of the light emitting structure 120.

A ceramic-based insulating material may be further disposed between the first supporting member 153 and the second supporting member 153A, and the insulating material of the ceramic material may be the first supporting member 153 and the second supporting member 153. It may be disposed on the same horizontal surface as the lower surface of the support member 153A.

20 is a side cross-sectional view showing a light emitting device according to the sixth embodiment.

Referring to FIG. 20, the width W5 of the first connection electrode 141A may be wider than the width of the first electrode 135, and the first connection electrode 141A and the first electrode ( The side surface of the 135 may be disposed on the same plane (that is, vertical surface) with the side surface of the light emitting structure 120. The partial region A1 of the light emitting structure 120 may be etched to expose the etch region of the first conductive semiconductor layer 115. The edge region of the light emitting structure 120 may be spaced apart from the side surface of the light emitting structure 120 at a predetermined interval D8 along the edge region of the first conductive semiconductor layer 115 and may be formed in a loop shape. A portion 135A of the first electrode 135 is connected to the first electrode 135 and may be formed in a loop shape along an edge region of the first conductive semiconductor layer 115, and the loop shape may be It may be open loop or closed loop shape.

The width W6 of the second connection electrode 143A may be wider than the width of the second connection electrode 137.

The surface 161A of the phosphor layer 161 may be formed of a light extraction structure such as roughness or uneven structure.

21 is a side sectional view showing a light emitting device according to the seventh embodiment.

Referring to FIG. 21, the light emitting device includes a first semiconductor layer 113, a phosphor layer 163, and a lens 164. A phosphor layer 163 may be formed on an upper surface of the first semiconductor layer 113, and a lens 164 may be formed on the phosphor layer 163. An upper surface of the first semiconductor layer 113 may be formed in an uneven pattern, but is not limited thereto.

The phosphor layer 163 may be formed to a predetermined thickness, and the lens 164 may be formed in a convex lens shape on the phosphor layer 163. The shape of the lens 164 may include not only a convex lens but also a concave lens and an aspherical lens shape having an uneven pattern, but is not limited thereto.

A plurality of second electrodes 137 may be formed under the reflective electrode layer 131, and second connection electrodes 143 are disposed under the plurality of second electrodes 137, respectively. The second connection electrodes 143 may be spaced apart at predetermined intervals T3, and may be arranged in a dot matrix shape when viewed from the bottom of the light emitting device. The support member 151 is disposed between the first connection electrode 141 and the plurality of second connection electrodes 143 and functions as an insulating support layer. By arranging the plurality of second connection electrodes 143 under the light emitting structure 120, the strength of the support member 151 may be reinforced, and electrical contact efficiency may be improved. In addition, poor bonding at the second connection electrode 143 of the light emitting device can be prevented. According to an embodiment, a plurality of first connection electrodes 141 may also be formed, but embodiments are not limited thereto.

22 is a side sectional view showing a light emitting device according to an eighth embodiment.

Referring to FIG. 22, a portion A1 of the light emitting structure 120 is an etching region, and exposes the first conductive semiconductor layer 115 in different regions. First electrodes 135 may be formed under the first conductive semiconductor layer 115, and second electrodes 137 may be formed under the reflective electrode layer 131. The first electrode 135 and the second electrode 137 may be alternately arranged to supply a current uniformly. In addition, the light emitting structure 120 is formed of a plurality of cells, thereby improving the brightness.

23 is a side sectional view showing a light emitting device according to the ninth embodiment. In the description of the ninth embodiment, the same parts as the first embodiment will be denoted by the same reference numerals, and redundant description thereof will be omitted.

Referring to FIG. 23, in the light emitting device, a reflective electrode layer 130 and a second electrode pad 132 are disposed under the light emitting structure 120, and the reflective electrode layer 130 is the second conductive semiconductor layer 119. ) And functions as an ohmic and a reflective electrode, and the second electrode pad 132 has a layer or pattern shape.

A first electrode pad 134 is disposed under the first conductive semiconductor layer 115, and the first electrode pad 134 is in contact with the first conductive semiconductor layer 115 and is positioned on the first electrode pad 134. A bonding layer 136 is bonded between the first conductive semiconductor layer 115. The first electrode bonding layer 136 is bonded between the first electrode pad 134 and the first connection electrode 141 and serves to electrically connect the first electrode bonding layer 136. The first electrode bonding layer 136 includes a first junction electrode 136A and a second junction electrode 136B under the first junction electrode 136A, and the first junction electrode 136A is formed of the first junction electrode 136A. The first electrode pad 134 is bonded to each other, and the second junction electrode 136B is bonded between the first connection electrode 141 and the first junction electrode 136A.

The first electrode pad 134 is formed of a structure having the same material and thickness range as that of the second electrode pad 132, which will be described later. For example, the first electrode pad 134 and the second electrode pad ( 132 includes an adhesive layer, a reflective layer under the adhesive layer, a diffusion barrier layer under the reflective layer, and a bonding layer under the diffusion barrier layer. The first electrode bonding layer 136 is bonded between the first connection electrode 141 and the first electrode pad 134 to bond the first connection electrode 141 and the first electrode pad 134. Can improve.

The first junction electrode 136A of the first electrode bonding layer 136 is bonded to the second junction electrode 136B bonded to the first connection electrode 141, thereby physically connecting the first connection electrode 141. It can improve the phosphor bonding and electrical connection.

A reflective electrode layer 130 is formed on a lower surface of the second conductive semiconductor layer 120, and a second electrode pad 132 is formed under the reflective electrode layer 130. The lower surface area of the reflective electrode layer 130 may be equal to or smaller than the upper surface area of the second electrode pad 132, but is not limited thereto. A second electrode bonding layer 138 is formed between the second electrode pad 132 and the second connection electrode 143 to bond the bonding force between the second electrode pad 132 and the second connection electrode 143. It can be improved.

The second electrode bonding layer 138 serves to connect the second electrode pad 132 and the second connection electrode 143. The second electrode bonding layer 138 includes a third junction electrode 138A and a fourth junction electrode 138B under the third junction electrode 138A. The third junction electrode 138A is bonded to the second electrode pad 132, and the fourth junction electrode 138B is bonded between the second connection electrode 143 and the third junction electrode 138A. do.

The second electrode bonding layer 138 is bonded between the second connection electrode 143 and the second electrode pad 132 to bond the second connection electrode 143 and the second electrode pad 132. Can improve. The first electrode pad 134 is a first electrode, and the second electrode pad 132 functions as a second electrode.

FIG. 24 is a diagram illustrating an example of a reflective electrode layer and a second electrode pad of FIG. 23.

Referring to FIG. 24, the reflective electrode layer 132 includes an ohmic contact layer 11, a reflective layer 12 under the ohmic contact layer 11, a diffusion barrier layer 13 and a diffusion barrier layer under the reflective layer 12. (13) The protective layer 14 is included below.

The ohmic contact layer 11 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), and indium gallium (IGTO). tin oxide), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), SnO, InO, INZnO, ZnO, IrOx, RuOx, NiO, Ni, Cr and two or more of these alloys It may be formed of at least one layer. The ohmic contact layer 11 may have a thickness of about 1 to about 1,000 mm.

The reflective layer 12 may be selected from a material having a reflectance of 70% or more under the ohmic contact layer 11, for example, a metal of Al, Ag, Ru, Pd, Rh, Pt, Ir, and an alloy of two or more of the above metals. have. The metal of the reflective layer 12 may be in ohmic contact under the second conductive semiconductor layer. In this case, the ohmic contact layer 11 may not be formed. The thickness of the reflective layer 12 may be formed to 1 ~ 10,0001.

The diffusion barrier layer 13 may be selected from Au, Cu, Hf, Ni, Mo, V, W, Rh, Ru, Pt, Pd, La, Ta, Ti, and two or more alloys thereof. The diffusion barrier 13 prevents interlayer diffusion at the boundary between different layers. The diffusion barrier layer 13 may be formed to have a thickness of 1 to 10,000 Å.

The protective layer 14 may be selected from Au, Cu, Hf, Ni, Mo, V, W, Rh, Ru, Pt, Pd, La, Ta, Ti, and two or more alloys thereof, and the thickness thereof is 1 It may be formed to ~ 10,000 kPa. The reflective electrode layer 130 may not include at least one of the ohmic contact layer 11, the diffusion barrier layer 13, and the protective layer 14.

The second electrode pad 132 may include an adhesive layer 15, a reflective layer 16 under the adhesive layer 15, a diffusion barrier layer 17 under the reflective layer 16, and a bonding layer under the diffusion barrier layer 17. 18). The adhesive layer 15 may be bonded to the reflective electrode layer 130, and may be formed of Cr, Ti, Co, Ni, V, Hf, and an optional alloy thereof, and may have a thickness of about 1 to 1,000 μm. have. The reflective layer 16 is formed under the adhesive layer 15, and the material may be formed of Ag, Al, Ru, Rh, Pt, Pd and optional alloys thereof, the thickness of which is 1 to 10,0001. Can be formed. The diffusion barrier layer 17 is formed below the reflective layer 16, and the material may be formed of Ni, Mo, W, Ru, Pt, Pd, La, Ta, Ti, and optional alloys thereof. The thickness includes 1 to 10,000Å. The bonding layer 18 may be formed of Al, Au, Cu, Hf, Pd, Ru, Rh, Pt, and optional alloys thereof, and may have a thickness of 1 to 10,000 kPa. The second electrode pad 132 may not include the reflective layer 16.

At least one of the reflective electrode layer 130 and the second electrode pad 132 may be equally applied to the reflective electrode layer and the second electrode pad disclosed in FIG. 1 or other embodiment (s), but is not limited thereto. Do not.

FIG. 25 is a diagram illustrating an example of a second electrode of FIG. 23.

Referring to FIG. 25, the second electrode bonding layer 138 includes a third junction electrode 138A and a fourth junction electrode 138B, and the third junction electrode 138A is formed of at least three metal layers. Can be. The third junction electrode 138A includes an adhesive layer 21, a support layer 22 under the adhesive layer 21, and a protective layer 23 under the support layer 22. The adhesive layer 21 is adhered to the second electrode pad, and may be formed of Cr, Ti, Co, Cu, Ni, V, Hf, or two or more of these alloys, and has a thickness of 1 to 1,000 kPa. The support layer 22 is a layer formed thicker than the thickness of the adhesive layer 21, and is selected from Ag, Al, Au, Co, Cu, Hf, Mo, Ni, Ru, Rh, Pt, Pd and at least two of these alloys. It may be formed as, the thickness is in the range of 1 to 500,000 Å, as another example may be formed to a thickness of 1,000 to 10,000 다른. The protective layer 23 is a layer for protecting the influence on the first conductive semiconductor layer, and includes Au, Cu, Ni, Hf, Mo, V, W, Rh, Ru, Pt, Pd, La, Ta, Ti and two or more of these alloys may be selectively formed, and the thickness thereof may be formed to 1 to 50,000 kPa.

The stacking period of the adhesive layer 21 and the support layer 22 of the third junction electrode 138A may be repeatedly stacked, and the stacking period may be formed in one or more cycles.

The fourth junction electrode 138B may be formed of at least three metal layers, and may include an adhesive layer 24, a diffusion barrier layer 25 under the adhesive layer 24, and a bonding layer 26 under the diffusion barrier layer 25. It includes. The adhesive layer 24 is a layer bonded to the third junction electrode 138A, and may be selected from Cr, Ti, Co, Ni, V, Hf, and two or more of these alloys, and has a thickness of 1 to 1,000 kPa. It can be formed as. The diffusion barrier 25 is a layer for preventing interlayer diffusion, and may be selected from Ni, Mo, Hf, W, Ru, Pt, Pd, La, Ta, Ti, and two or more alloys thereof, the thickness of which is It can be formed to 1 ~ 10,000Å. The bonding layer 26 is a layer for bonding with the first connection electrode and includes Au, Cu, Ni, Hf, Mo, V, W, Rh, Ru, Pt, Pd, La, Ta, Ti, and two of them. It may be selected from the above alloy, the thickness may be formed to 1 ~ 10,0001. The stacking period of the adhesive layer 24 and the diffusion barrier layer 26 of the fourth junction electrode 138B may be repeatedly stacked, and the stacking period may be formed in one or more cycles. The structure of the second electrode bonding layer of FIG. 25 may be applied to the electrode of FIG. 1 or the electrode of another embodiment, but is not limited thereto.

FIG. 26 is a diagram illustrating an example of the first electrode bonding layer of FIG. 23.

Referring to FIG. 26, the first electrode bonding layer 136 includes a first junction electrode 136A and a second junction electrode 136B, and the first junction electrode 136A is a third junction of FIG. 25. The second junction electrode 136B is stacked with the same metal layer as the electrode 138A, and the second junction electrode 136B is stacked with the same metal layer as the second junction electrode 138B of FIG. 25. Accordingly, the first junction electrode 136A is disposed between the first electrode pad and the second junction electrode 136B, and the second junction electrode 136B is disposed between the first junction electrode 136A and the first junction electrode 136A. It is disposed between the connecting electrode 141. The first junction electrode 136A and the second junction electrode 136B will be referred to the stacked structure of the third junction electrode and the fourth junction electrode of FIG. 25. The structure of the first electrode bonding layer of FIG. 26 may be applied to the first electrode of FIG. 1 or other embodiments, but is not limited thereto.

FIG. 27 is another example of the second electrode bonding layer of FIG. 23.

Referring to FIG. 27, an upper surface of the third junction electrode 138A of the second electrode bonding layer 138 may be formed to have the same area as that of the lower surface of the second electrode pad 132. An upper surface area of the third junction electrode 138A of the second electrode bonding layer 138 may be greater than an upper surface area of the fourth junction electrode 138B and less than or equal to an area of the lower surface of the second electrode. The structures of the second electrode pad and the second electrode bonding layer of FIG. 24 may be applied to the electrode of FIG. 1 or other embodiments, but are not limited thereto.

28 is a view showing a light emitting device package mounted with a light emitting device according to the embodiment.

Referring to FIG. 28, the light emitting device package 200 may include a body portion 211, a first lead electrode 215 and a second lead electrode 217 installed on the body portion 211, and a molding member 217. , And the light emitting device 100.

The body portion 211 may be injection molded selectively from a high reflection resin series (eg, PPA), a polymer series, or a plastic series, or may be formed in a single layer or multilayer substrate stack structure. The body portion 211 includes a cavity 212 having an open top, and a circumferential surface of the cavity 212 may be inclined or formed perpendicular to the cavity bottom surface.

The first lead electrode 215 and the second lead electrode 217 are disposed in the cavity 212, and the first lead electrode 215 and the second lead electrode 217 are spaced apart from each other.

The light emitting device 100 according to the embodiment (s) disclosed above is bonded to the first lead electrode 215 and the second lead electrode 217 by a flip method. That is, the first connection electrode 141 of the light emitting device 100 is bonded to the first lead electrode 215, and the second connection electrode 143 is bonded to the second lead electrode 217.

Upper surfaces of the first lead electrode 215 and the second lead electrode 217 and a lower surface of the light emitting device 100, that is, the first connection electrode 141, the second connection electrode 143, and the support member. An interval between the lower surfaces of the 151 may be formed at the same interval, but is not limited thereto.

The support member 151 of the light emitting device 100 is spaced apart on the first lead electrode 215 and the second lead electrode 217 and radiates heat through the entire surface.

A molding member 217 is formed in the cavity 212, and the molding member 217 may be formed of a light transmissive resin material such as silicon or epoxy, and may include a phosphor.

The light generated inside the light emitting device 100 may be extracted most of the light through the top and side surfaces of the light emitting device 100, and the extracted light may be emitted to the outside through the molding member 217. .

The light emitting device package 200 may be mounted as one or a plurality of light emitting devices of the above-described embodiments, but is not limited thereto. When the light emitting device package includes a light emitting device according to another embodiment having a phosphor layer as shown in FIG. 14, a separate phosphor may not be added to the molding member 217. As another example, the light emitting device package may include a phosphor of the phosphor layer. Other phosphors or phosphors emitting similar colors to each other can be added.

The light emitting device or the light emitting device package according to the embodiment may be applied to the light unit. The light unit includes a structure in which a plurality of light emitting devices or light emitting device packages are arranged. The display device shown in FIGS. 29 and 30 and the lighting device shown in FIG. 31 may be included, and a lighting lamp, a traffic light, a vehicle headlamp, an electronic signboard, and the like may be included.

29 is an exploded perspective view of a display device according to an exemplary embodiment.

Referring to FIG. 29, the display apparatus 1000 according to the exemplary embodiment includes a light guide plate 1041, a light emitting module 1031 that provides light to the light guide plate 1041, and a reflective member 1022 under the light guide plate 1041. ), An optical sheet 1051 on the light guide plate 1041, a display panel 1061, a light guide plate 1041, a light emitting module 1031, and a reflective member 1022 on the optical sheet 1051. The bottom cover 1011 may be included, but is not limited thereto.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 diffuses light to serve as a surface light source. The light guide plate 1041 is made of a transparent material, for example, acrylic resin-based such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN). It may include one of the resins.

The light emitting module 1031 provides light to at least one side of the light guide plate 1041, and ultimately serves as a light source of the display device.

The light emitting module 1031 may include at least one, and may provide light directly or indirectly at one side of the light guide plate 1041. The light emitting module 1031 may include a module substrate 1033 and a light emitting device 100 according to the exemplary embodiment disclosed above, and the light emitting device 100 may be arranged on the module substrate 1033 at predetermined intervals. have. As another example, the light emitting device package of FIG. 23 may be arrayed on the module substrate 1033.

The module substrate 1033 may be a printed circuit board (PCB) including a circuit pattern (not shown). However, the module substrate 1033 may include not only a general PCB but also a metal core PCB (MCPCB, Metal Core PCB), a flexible PCB (FPCB, Flexible PCB) and the like, but is not limited thereto. When the light emitting device 100 is mounted on the side surface of the bottom cover 1011 or the heat dissipation plate, the module substrate 1033 may be removed. Here, a part of the heat dissipation plate may contact the upper surface of the bottom cover 1011.

In addition, the plurality of light emitting devices 100 may be mounted on the module substrate 1033 such that an emission surface from which light is emitted is spaced apart from the light guide plate 1041 by a predetermined distance, but is not limited thereto. The light emitting device 100 may directly or indirectly provide light to a light incident portion that is at least one side of the light guide plate 1041, but is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflective member 1022 may improve the luminance of the light unit 1050 by reflecting light incident to the lower surface of the light guide plate 1041 and pointing upward. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be combined with the top cover, but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, and includes a first and second substrates of transparent materials facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 displays information by light passing through the optical sheet 1051. The display device 1000 may be applied to various portable terminals, monitors of notebook computers, monitors of laptop computers, televisions, and the like.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light transmissive sheet. The optical sheet 1051 may include at least one of a sheet such as, for example, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The diffusion sheet diffuses the incident light, the horizontal and / or vertical prism sheet focuses the incident light into the display area, and the brightness enhancement sheet reuses the lost light to improve the brightness. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

Here, the light guide plate 1041 and the optical sheet 1051 may be included as an optical member on the optical path of the light emitting module 1031, but are not limited thereto.

30 is a diagram illustrating a display device according to an exemplary embodiment.

Referring to FIG. 30, the display device 1100 includes a bottom cover 1152, a module substrate 1120 on which the light emitting device 100 disclosed above is arranged, an optical member 1154, and a display panel 1155. .

The module substrate 1120 and the light emitting device 100 may be defined as a light emitting module 1060. The bottom cover 1152, at least one light emitting module 1060, and the optical member 1154 may be defined as a light unit. The light emitting devices may be mounted on the module substrate 1120 in a flip manner to be arrayed. In addition, the light emitting device package illustrated in FIG. 23 may be arranged on the module substrate 1120. The bottom cover 1152 may include an accommodating part 1153, but is not limited thereto.

Here, the optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, horizontal and vertical prism sheets, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a poly methy methacrylate (PMMA) material, and the light guide plate may be removed. The diffusion sheet diffuses the incident light, the horizontal and vertical prism sheets focus the incident light onto the display area, and the brightness enhancement sheet reuses the lost light to improve the brightness.

31 is a perspective view of a lighting apparatus according to an embodiment.

Referring to FIG. 31, the lighting device 1500 includes a case 1510, a light emitting module 1530 installed in the case 1510, and a connection terminal installed in the case 1510 and receiving power from an external power source. 1520).

The case 1510 may be formed of a material having good heat dissipation, for example, may be formed of a metal material or a resin material.

The light emitting module 1530 may include a module substrate 1532 and a light emitting device 100 according to an embodiment mounted on the module substrate 1532. The plurality of light emitting devices 100 may be arranged in a matrix form or spaced apart at predetermined intervals. The light emitting devices may be flip-mounted on the module substrate 1532 or arrayed into the light emitting device package shown in FIG. 23.

The module substrate 1532 may be a circuit pattern printed on an insulator. For example, a printed circuit board (PCB), a metal core PCB, a flexible PCB, and a ceramic PCB may be used. And the like.

In addition, the module substrate 1532 may be formed of a material that reflects light efficiently, or a surface may be coated with a color, for example, white, silver, etc., in which the light is efficiently reflected.

At least one light emitting device package 200 may be mounted on the module substrate 1532. Each of the light emitting device packages 200 may include at least one light emitting diode (LED) chip. The LED chip may include a colored light emitting diode emitting red, green, blue or white colored light, and a UV emitting diode emitting ultraviolet (UV) light.

The light emitting module 1530 may be arranged to have a combination of various light emitting device packages 200 to obtain color and luminance. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be combined to secure high color rendering (CRI).

The connection terminal 1520 may be electrically connected to the light emitting module 1530 to supply power. The connection terminal 1520 is inserted into and coupled to an external power source in a socket manner, but is not limited thereto. For example, the connection terminal 1520 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by a wire.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

Although the above description has been made with reference to the embodiments, these are only examples and are not intended to limit the present invention, and those of ordinary skill in the art to which the present invention pertains should not be exemplified above without departing from the essential characteristics of the present embodiments. It will be appreciated that many variations and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

DESCRIPTION OF SYMBOLS 100 Light emitting element, 115: 1st conductive semiconductor layer, 117: active layer, 119: 2nd conductive semiconductor layer, 120: light emitting structure, 130,131: reflective electrode layer, 133: insulating layer, 135,136: 1st electrode, 137,138: Second electrode, 141: first connection electrode, 143: second connection electrode, 151: support member, 170: module substrate, 200: light emitting device package

Claims (26)

A first conductive semiconductor layer; A second conductive semiconductor layer; A light emitting structure including an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer;
A first electrode under the first conductive semiconductor layer;
A reflective electrode layer disposed under the second conductive semiconductor layer;
A second electrode under the reflective electrode layer;
A support member disposed below the first conductive semiconductor layer and the reflective electrode layer and disposed around the first and second electrodes;
A first connection electrode disposed at least partially within the support member and formed under the first electrode; And
At least a part of the support member and a second connection electrode formed under the second electrode;
The support member includes a light-emitting element of a ceramic series in the support member. The light emitting device of claim 1, wherein the support member comprises an insulating resin layer disposed around the first electrode, the second electrode, the first connection electrode, and the second connection electrode. The light emitting device of claim 1, further comprising an insulating layer in a region between the support member, the reflective electrode layer, and the light emitting structure. delete The light emitting device of claim 1, wherein the heat spreader comprises at least one of an oxide, a nitride, a fluoride, and a sulfide having at least one of Al, Cr, Si, Ti, Zn, and Zr. The light emitting device of claim 1, wherein the heat diffusion agent is added in the content ratio of 50 to 99wt%. The light emitting device of claim 1, wherein the heat diffusion agent has a particle size of 1 to 100,000 kPa. A first conductive semiconductor layer; A second conductive semiconductor layer; A light emitting structure including an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer;
A first electrode under the first conductive semiconductor layer;
A reflective electrode layer disposed under the second conductive semiconductor layer;
A second electrode under the reflective electrode layer;
A support member disposed below the first conductive semiconductor layer and the reflective electrode layer and disposed around the first and second electrodes;
A first connection electrode disposed at least partially within the support member and formed under the first electrode; And
At least a part of the support member and a second connection electrode formed under the second electrode;
The support member may include a ceramic heat spreader, and the reflective electrode layer may include an ohmic contact layer contacting a bottom surface of the light emitting structure; A reflective layer disposed under the ohmic contact layer; And a first diffusion barrier layer disposed under the reflective layer. The display device of claim 8, wherein at least one of the first electrode and the second electrode comprises: a first adhesive layer adhered to the first diffusion barrier layer; A second diffusion barrier layer under the first adhesive layer; And a first bonding layer under the second diffusion barrier layer. A first conductive semiconductor layer; A second conductive semiconductor layer; A light emitting structure including an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer;
A first electrode under the first conductive semiconductor layer;
A reflective electrode layer disposed under the second conductive semiconductor layer;
A second electrode under the reflective electrode layer;
A support member disposed below the first conductive semiconductor layer and the reflective electrode layer and disposed around the first and second electrodes;
A first connection electrode disposed at least partially within the support member and formed under the first electrode; And
At least a part of the support member and a second connection electrode formed under the second electrode;
And a second electrode bonding layer bonded between the first electrode and the first connection electrode, and a second electrode bonding layer bonded between the second electrode and the second connection electrode. The light emitting device of claim 10, wherein the first electrode bonding layer comprises a first junction electrode bonded to the first electrode, and a second junction electrode bonded between the first connection electrode and the first junction electrode. . The method of claim 11, wherein the second electrode electrode layer is formed of the same layer as the first electrode bonding layer,
The first bonding electrode includes a second adhesive layer, a support layer under the second adhesive layer, and a protective layer under the support layer.
The second bonding electrode includes a third adhesive layer, a third diffusion barrier layer under the third adhesive layer, and a second bonding layer under the third diffusion barrier layer. A first conductive semiconductor layer; A second conductive semiconductor layer; A light emitting structure including an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer;
A first electrode under the first conductive semiconductor layer;
A reflective electrode layer disposed under the second conductive semiconductor layer;
A second electrode under the reflective electrode layer;
A support member disposed below the first conductive semiconductor layer and the reflective electrode layer and disposed around the first and second electrodes;
A first connection electrode disposed at least partially within the support member and formed under the first electrode; And
At least a part of the support member and a second connection electrode formed under the second electrode;
The support member includes a ceramic heat spreader, and further includes an insulation layer in a region between the support member, the reflective electrode layer, and the light emitting structure, wherein the insulation layer has a first refractive index having a first refractive index. And a second insulating layer having a second refractive index different from the first refractive index. A first conductive semiconductor layer; A second conductive semiconductor layer; A light emitting structure including an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer;
A first electrode under the first conductive semiconductor layer;
A reflective electrode layer disposed under the second conductive semiconductor layer;
A second electrode under the reflective electrode layer;
A support member disposed below the first conductive semiconductor layer and the reflective electrode layer and disposed around the first and second electrodes;
A first connection electrode disposed at least partially within the support member and formed under the first electrode; And
At least a part of the support member and a second connection electrode formed under the second electrode;
The support member includes a ceramic-based heat spreader, wherein the support member has a thickness thicker than that of the first connection electrode and the second connection electrode. The light emitting device of claim 14, wherein a lower surface of the support member is disposed on the same horizontal surface as a lower surface of the first connection electrode and the second connection electrode. A first conductive semiconductor layer; A second conductive semiconductor layer; A light emitting structure including an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer;
A first electrode under the first conductive semiconductor layer;
A reflective electrode layer disposed under the second conductive semiconductor layer;
A second electrode under the reflective electrode layer;
A support member disposed below the first conductive semiconductor layer and the reflective electrode layer and disposed around the first and second electrodes;
A first connection electrode disposed at least partially within the support member and formed under the first electrode; And
At least a part of the support member and a second connection electrode formed under the second electrode;
The support member includes a ceramic-based heat spreader, and the support member includes a first support member disposed around the first connection electrode, and a circumference of the second connection electrode spaced apart from the first support member. A light emitting device comprising a second support member disposed in the. The light emitting device of claim 16, wherein the first support member and the second support member are formed of a conductive material. The light emitting device of claim 1 or 16, further comprising a phosphor layer on the first conductive semiconductor layer. The light emitting device of claim 18, wherein the phosphor layer is further formed on a side surface of the light emitting structure. The light emitting device of claim 18, wherein at least one of an upper surface of the first conductive semiconductor layer and an upper surface of the phosphor layer includes an uneven structure. delete The light emitting device of any one of claims 1 to 3, wherein the first connection electrode and the second connection electrode include a single layer. A first conductive semiconductor layer; A second conductive semiconductor layer; A light emitting structure including an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer;
A first electrode under the first conductive semiconductor layer;
A reflective electrode layer disposed under the second conductive semiconductor layer;
A second electrode under the reflective electrode layer;
A support member disposed below the first conductive semiconductor layer and the reflective electrode layer and disposed around the first and second electrodes;
A first connection electrode disposed at least partially within the support member and formed under the first electrode; And
At least a part of the support member and a second connection electrode formed under the second electrode;
A lower surface width of the support member is formed with a width equal to the width of the upper surface of the first conductive semiconductor layer. The light emitting device of any one of claims 1 to 3; And
A module substrate including a first pad and a second pad,
The light emitting device is arrayed on the module substrate,
And a first connection electrode of the light emitting device is connected to the first pad of the module substrate, and a second connection electrode of the light emitting device is connected to the second pad. 25. The light emitting module of claim 24, wherein each of the lower surfaces of the first connecting electrode, the second connecting electrode, and the supporting member of the light emitting element has the same distance as the upper surface of the module substrate. Forming a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on the substrate;
Etching to expose a portion of the first conductive semiconductor layer;
Forming a reflective electrode layer on the light emitting structure;
Forming an insulating layer on the reflective electrode layer and the light emitting structure;
Forming a first electrode on the first conductive semiconductor layer and a second electrode on the reflective electrode layer;
Forming a first connection electrode on the first electrode and a second connection electrode on the second electrode; And
Forming a support member on the insulating layer to have a height of upper surfaces of the first and second connection electrodes;
Removing the substrate when the support member is formed; And
The support member manufacturing method comprising a ceramic-based heat spreader in the support member.

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