KR102607885B1 - Semiconductor device and semiconductor device package including the same - Google Patents

Abstract

An embodiment includes a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a reflective layer disposed on the second electrode; and a capping layer disposed on the reflective layer and including a plurality of layers, wherein the capping layer includes a first layer directly disposed on the reflective layer, wherein the first layer includes a semiconductor device including Ti. Begin.

Description

Semiconductor device and semiconductor device package including the same {SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PACKAGE INCLUDING THE SAME}

The embodiment relates to a semiconductor device and a semiconductor device package including the same.

Semiconductor devices containing compounds such as GaN and AlGaN have many advantages, such as having a wide and easily adjustable band gap energy, and can be used in a variety of ways, such as light emitting devices, light receiving devices, and various diodes.

In particular, light-emitting devices such as light emitting diodes and laser diodes using group 3-5 or group 2-6 compound semiconductor materials have been developed into red, green, and green colors through the development of thin film growth technology and device materials. Various colors such as blue and ultraviolet rays can be realized, and efficient white light can also be realized by using fluorescent materials or combining colors. Compared to existing light sources such as fluorescent lights and incandescent lights, it has low power consumption, semi-permanent lifespan, and fast response speed. , has the advantages of safety and environmental friendliness.

In addition, when light-receiving devices such as photodetectors or solar cells are manufactured using group 3-5 or group 2-6 compound semiconductor materials, the development of device materials absorbs light in various wavelength ranges to generate photocurrent. By doing so, light of various wavelengths, from gamma rays to radio wavelengths, can be used. In addition, it has the advantages of fast response speed, safety, environmental friendliness, and easy control of device materials, so it can be easily used in power control, ultra-high frequency circuits, or communication modules.

Therefore, semiconductor devices can replace the transmission module of optical communication means, the light emitting diode backlight that replaces the cold cathode fluorescence lamp (CCFL) that constitutes the backlight of LCD (Liquid Crystal Display) display devices, and fluorescent or incandescent light bulbs. Applications are expanding to include white light-emitting diode lighting devices, automobile headlights and traffic lights, and sensors that detect gas or fire. In addition, the applications of semiconductor devices can be expanded to high-frequency application circuits, other power control devices, and communication modules.

In particular, light-emitting devices that emit light in the ultraviolet wavelength range have a curing or sterilizing effect and can be used for curing, medical purposes, and sterilization.

Recently, research on ultraviolet light-emitting devices has been active, but there are still problems with ultraviolet light-emitting devices that are difficult to implement vertically, and light extraction efficiency is relatively low.

Embodiments provide a semiconductor device with improved light extraction efficiency.

The embodiment provides a semiconductor device with excellent current injection efficiency.

The problem to be solved in the embodiment is not limited to this, and it will also include means of solving the problem described below and purposes and effects that can be understood from the embodiment.

A semiconductor device according to an embodiment of the present invention includes a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. structure; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a reflective layer disposed on the second electrode; and a capping layer disposed on the reflective layer and including a plurality of layers, wherein the capping layer includes a first layer directly disposed on the reflective layer, and the first layer may include Ti.

A semiconductor device according to another embodiment of the present invention includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer. structure; a first electrode electrically connected to the first conductive semiconductor layer; a transparent electrode electrically connected to the second conductive semiconductor layer and including ITO; a reflective layer disposed on the transparent electrode and containing Al; and a capping layer disposed on the reflective layer and including a plurality of layers, wherein the capping layer includes: a first layer disposed directly on the reflective layer and including Ti; and an intermediate layer disposed on the first layer and comprising a plurality of layers, the intermediate layer being disposed directly on the first layer and comprising a first intermediate layer comprising Ni, the first layer and The thickness ratio of the first intermediate layer may be 1:1 to 3:1.

A semiconductor package according to an embodiment of the present invention includes a body; and a semiconductor element disposed on the body, wherein the semiconductor element is disposed between a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and the first conductivity type semiconductor layer and the second conductivity type semiconductor layer. A light emitting structure including an active layer; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a reflective layer disposed on the second electrode; and a capping layer disposed on the reflective layer and including a plurality of layers, wherein the capping layer includes a first layer directly disposed on the reflective layer, and the first layer may include Ti.

According to an embodiment, light extraction efficiency can be improved by minimizing dark spots in the reflective layer of the semiconductor device.

Additionally, by forming the capping layer of a semiconductor device by stacking a plurality of layers, stress can be alleviated and current injection efficiency can be improved.

The various and beneficial advantages and effects of the present invention are not limited to the above-described content, and may be more easily understood through description of specific embodiments of the present invention.

1 is a conceptual diagram of a semiconductor device according to a first embodiment of the present invention.
FIG. 2A is an enlarged view of portion A of FIG. 1.
Figure 2b is a modified example of Figure 2a.
3A to 3D show various modifications of the capping layer in the semiconductor device according to the first embodiment of the present invention.
Figure 4 is a conceptual diagram of a semiconductor device according to a second embodiment of the present invention.
FIGS. 5A and 5B are diagrams for explaining a configuration in which light output is improved according to a change in the number of recesses.
Figure 6a is an enlarged view of part B of Figure 4.
Figure 6b is a modified example of Figure 6a.
7 is a conceptual diagram of a semiconductor package according to an embodiment of the present invention.
Figures 8a and 8b show the reflection layer observed by changing the structure of the capping layer in a semiconductor device.

The present embodiments may be modified in other forms or various embodiments may be combined with each other, and the scope of the present invention is not limited to each embodiment described below.

Even if matters described in a specific embodiment are not explained in other embodiments, they may be understood as descriptions related to other embodiments, as long as there is no explanation contrary to or contradictory to the matter in the other embodiments.

For example, if a feature for configuration A is described in a specific embodiment and a feature for configuration B is described in another embodiment, the description is contrary or contradictory even if an embodiment in which configuration A and configuration B are combined is not explicitly described. Unless otherwise stated, it should be understood as falling within the scope of the rights of the present invention.

In the description of the embodiment, when an element is described as being formed “on or under” another element, or under) includes both elements that are in direct contact with each other or one or more other elements that are formed (indirectly) between the two elements. Additionally, when expressed as "on or under," it can include not only the upward direction but also the downward direction based on one element.

The semiconductor device may include various electronic devices such as a light-emitting device and a light-receiving device, and both the light-emitting device and the light-receiving device may include a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer.

The semiconductor device according to this embodiment may be a light emitting device.

Light-emitting devices emit light when electrons and holes recombine, and the wavelength of this light is determined by the material's inherent energy band gap. Accordingly, the light emitted may vary depending on the composition of the material.

Hereinafter, with reference to the attached drawings, embodiments of the present invention will be described in detail so that those skilled in the art can easily implement the present invention.

1 is a conceptual diagram of a semiconductor device according to a first embodiment of the present invention. FIG. 2A is an enlarged view of portion A of FIG. 1. Figure 2b is a modified example of Figure 2a. 3A to 3D show various modifications of the capping layer in the semiconductor device according to the first embodiment of the present invention.

A semiconductor device according to an embodiment of the present invention can output light in the ultraviolet wavelength range. For example, the semiconductor device may output light in the near-ultraviolet wavelength range (UV-A), may output light in the far-ultraviolet wavelength range (UV-B), or may output light in the deep ultraviolet wavelength range (UV-C). You may. The wavelength range can be determined by the Al composition ratio of the semiconductor device.

For example, light in the near-ultraviolet wavelength range (UV-A) may have a wavelength in the range of 320 nm to 420 nm, light in the far-ultraviolet wavelength range (UV-B) may have a wavelength in the range of 280 nm to 320 nm, and deep ultraviolet rays may have a wavelength in the range of 280 nm to 320 nm. Light in the wavelength range (UV-C) may have a wavelength ranging from 100 nm to 280 nm.

1 and 2A, the semiconductor device 100 according to the first embodiment of the present invention may include a light emitting structure 110, a second electrode 122, a reflective layer 132, and a capping layer 140. You can.

The light emitting structure 110 is disposed between the first conductivity type semiconductor layer 111, the second conductivity type semiconductor layer 112, and the first conductivity type semiconductor layer 111 and the second conductivity type semiconductor layer 112. It may include an active layer 113.

The first conductive semiconductor layer 111 may be implemented with a compound semiconductor such as group III-V or group II-VI, and may be doped with a first dopant. The first conductive semiconductor layer 111 is made of a semiconductor material with a composition formula of Inx1Aly1Ga1-x1-y1N (0≤x1≤1, 0≤y1≤1, 0≤x1+y1≤1), for example, GaN, AlGaN, It can be selected from InGaN, InAlGaN, etc. And, the first dopant may be an n-type dopant such as Si, Ge, Sn, Se, or Te. When the first dopant is an n-type dopant, the first conductive semiconductor layer 111 doped with the first dopant may be an n-type semiconductor layer.

The second conductive semiconductor layer 112 may be implemented as a compound semiconductor of group III-V or group II-VI, and may be doped with a second dopant. The second conductive semiconductor layer 112 is made of a semiconductor material with a composition formula of Inx5Aly2Ga1-x5-y2N (0≤x5≤1, 0≤y2≤1, 0≤x5+y2≤1) or AlInN, AlGaAs, GaP, GaAs. , GaAsP, and AlGaInP. When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, Ba, etc., the second conductive semiconductor layer 112 doped with the second dopant may be a p-type semiconductor layer.

The active layer 113 may be disposed between the first conductive semiconductor layer 111 and the second conductive semiconductor layer 112. The active layer 113 may be a layer where electrons (or holes) injected through the first conductive semiconductor layer 111 and holes (or electrons) injected through the second conductive semiconductor layer 112 meet. The active layer 113 transitions to a low energy level as electrons recombine with holes, and can generate light having an ultraviolet wavelength.

The active layer 113 may have any one of a single well structure, a multi-well structure, a single quantum well structure, a multi-quantum well (MQW) structure, a quantum dot structure, or a quantum wire structure, and the active layer 113 )'s structure is not limited to this.

The second electrode 122 may be disposed on the second conductive semiconductor layer 112. The second electrode 122 may be in ohmic contact with the second conductive semiconductor layer 112. Based on the cross section of the semiconductor device 100, the end of the second electrode 122 may be located inside the end of the second conductivity type semiconductor layer 112.

The second electrode 122 may be formed of a transparent conductive oxide (TCO) film that absorbs relatively little ultraviolet light. Transparent conductive oxide films include ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), AZO (Aluminum Zinc Oxide), AGZO (Aluminum Gallium Zinc Oxide), IZTO (Indium Zinc Tin Oxide), IAZO (Indium Aluminum Zinc Oxide), and IGZO. (Indium Gallium Zinc Oxide), IGTO (Indium Gallium Tin Oxide), ATO (Antimony Tin Oxide), GZO (Gallium Zinc Oxide), IZON (IZO Nitride), ZnO, IrOx, RuOx and NiO.

According to an embodiment, the second electrode 122 may directly contact a semiconductor layer (eg, P-AlGaN) having a band gap larger than the energy of the wavelength of ultraviolet light. Conventionally, the second electrode 122 is placed on a semiconductor layer (e.g., GaN layer) with a small band gap for ohmic purposes, so there is a problem in that most of the ultraviolet light is absorbed by the GaN layer. However, since the second electrode 122 in the embodiment is in direct ohmic contact with a semiconductor layer (eg, P-AlGaN) having a large band gap, most light can pass through the second conductivity type semiconductor layer 112.

For example, the surface layer of the second conductive semiconductor layer 112 in contact with the second electrode 122 may have an Al composition of 1% to 10%. If the Al composition of the surface layer is less than 1%, there is a problem of excessive light absorption, and if the Al composition is greater than 10%, ohmic properties may deteriorate.

Meanwhile, the second electrode can generally absorb ultraviolet light. Therefore, there is a need to improve light extraction efficiency while maintaining ohmic contact by the second electrode. That is, in the present invention, a transparent conductive oxide film can be used as the second electrode 122 to improve light extraction efficiency while maintaining ohmic properties. The present invention improves light transmission through a transparent conductive oxide film and improves light extraction efficiency by disposing a conductive layer (reflective layer) with reflective properties under the second electrode 122.

The thickness T1 of the second electrode 122 may be 1 to 10 nm. If the thickness of the second electrode 122 is less than 1 nm, cracks may easily occur due to external impact, and resistance may increase, reducing current injection efficiency. Additionally, if the thickness of the second electrode 122 is greater than 10 nm, the transmittance may decrease and light loss may occur.

The reflective layer 132 may be disposed on the second electrode 122. The reflective layer 132 may be disposed to completely cover the second electrode 122. The reflective layer 132 may be electrically connected to the second electrode 122.

The reflective layer 132 may be made of a material with excellent reflectivity. The reflective layer 132 may include aluminum. The reflective layer 132 may reflect light emitted from the active layer 113. Additionally, the reflective layer 132 can inject current into the second conductive semiconductor layer 112.

A bonding layer 132a may be further disposed between the second electrode 122 and the reflective layer 132. The bonding layer 132a can improve bonding strength between the second electrode 122 and the reflective layer 132. The bonding layer 132a may be disposed to completely surround the second electrode 122. Alternatively, the bonding layer 132a may be disposed to cover not only the second electrode 122 but also at least a portion of the second conductivity type semiconductor layer 112.

The bonding layer 132a may be formed as a single layer or a multilayer using one selected from Cr, ITO, and Ti, or a combination thereof. When the bonding layer 132a includes ITO, the ITO may further include various materials that can increase bonding strength. Exemplarily, ITO may further include at least one material selected from N, Zn, and Ga. These materials can be deposited together during the deposition of ITO and placed on the entire area of ITO, or they can also be placed only on the surface of ITO through surface treatment. However, this does not limit the material of the bonding layer 132a.

The thickness T2 of the bonding layer 132a may be 1 to 5 nm. Here, the thickness of the bonding layer 132a may mean the maximum height from the surface where the bonding layer 132a and the second electrode 122 are in contact. If the thickness of the bonding layer 132a is less than 1 nm, the bonding force between the second electrode 122 and the reflective layer 132 may be lowered. If the thickness of the bonding layer 132a is greater than 5 nm, the transmittance may decrease and light loss may occur.

The thickness T3 of the reflective layer 132 may be 50 to 2000 nm. Here, the thickness of the reflective layer 132 may mean the maximum height from the surface where the reflective layer 132 and the bonding layer 132a are in contact. If the thickness of the reflective layer 132 is less than 50 nm, the reflectance may decrease. If the thickness of the reflective layer 132 is greater than 2000 nm, the reflection efficiency may hardly increase.

The capping layer 140 may be disposed on the reflective layer 132. The capping layer 140 may be disposed to completely cover the reflective layer 132. The capping layer 140 may be electrically connected to the reflective layer 132. The capping layer 140 may protect the reflective layer 132. Additionally, the capping layer 140 may supply current to the second conductive semiconductor layer 112. The capping layer 140 may function as a current diffusion layer.

The capping layer 140 may be formed as a single layer or a multilayer using one selected from Ti, Ni, and Au or a combination thereof. However, this does not limit the present invention. In particular, Ti may be disposed in an area of the capping layer 140 that is in contact with the reflective layer 132. The structure of the capping layer 140 will be described in more detail later.

Referring to FIG. 2A, the end of the second electrode 122 and the end of the reflective layer 132 may be spaced apart by a separation distance D1. Specifically, with respect to the center C1 (FIG. 1) of the second electrode 122, the end of the reflective layer 132 may be disposed to be longer than the end of the second electrode 122. Since the reflective layer 132 is disposed up to the side of the second electrode 122, light emitted toward the side of the second electrode 122 is reflected upward, thereby improving light extraction efficiency.

The separation distance D1 between the end of the second electrode 122 and the end of the reflective layer 132 may be 2.5 to 5 μm. If the separation distance (D1) is less than 2.5㎛, the reflectance may decrease. If the separation distance D1 is greater than 5 ㎛, stress may increase in the corner area of the reflective layer 132, and reflection efficiency may hardly increase.

The end of the reflective layer 132 and the end of the capping layer 140 may be spaced apart by a separation distance D2. Specifically, based on the center C1 (FIG. 1) of the reflective layer 132, the end of the capping layer 140 may be disposed to be longer than the end of the reflective layer 132. Since the capping layer 140 is disposed up to the side of the reflective layer 132, the protective effect of the reflective layer 132 can be further increased.

The separation distance D2 between the end of the reflective layer 132 and the end of the capping layer 140 may be 2.5 to 5 μm. If the separation distance (D2) is less than 2.5㎛, the current injection efficiency and the protective effect of the reflective layer may decrease. If the separation distance D2 is greater than 5㎛, stress may increase in the corner area of the capping layer 140.

Figure 2b is a modified example of Figure 2a.

Referring to FIG. 2B, the end of the second electrode 122 and the end of the reflective layer 132 may be spaced apart by a separation distance D3. At this time, the separation distance D3 may be 2.5 to 5㎛. Additionally, the end of the second electrode 122 and the end of the capping layer 140 may also be spaced apart by the separation distance D3.

That is, in FIG. 2B, the ends of the reflective layer 132 and the capping layer 140 may be located on the same line. This is because, in the case of the outer surface of the reflective layer 132, the degree of influence on reflection efficiency is minimal, so it may be meaningless to cover it with the capping layer 140.

That is, in the embodiment of the present invention, the reflective layer 132 is disposed to completely cover the second electrode 122, thereby contributing to improvement of reflectance. Additionally, the protection effect of the reflective layer 132 may be improved by the capping layer 140 covering the upper surface of the reflective layer 132 or the entire reflective layer 132 .

With reference to FIGS. 3A to 3D, various structures of the capping layer (140:140-1,140-2,140-3,140-4) are described as follows.

First, referring to FIG. 3A, the capping layer 140-1 according to the first embodiment of the present invention may include a first layer 141, a second layer 142, and an intermediate layer 143.

The first layer 141 may be disposed directly on the reflective layer 132. The first layer 141 may be disposed on one side of the capping layer 140-1. The first layer 141 may include Ti. When Ti is included in the first layer 141, metal materials in the middle layer 143 can be prevented from diffusing into the reflective layer 132.

The second layer 142 may be disposed on the outermost side of the capping layer 140-1. That is, the second layer 142 may be disposed on the other side of the capping layer 140-1. Specifically, the second layer 142 may be disposed in the area furthest from the reflective layer 141 within the capping layer 140-1. The second layer 142 may include Au. Since the second layer 142 includes Au, oxidation or deformation of materials inside the capping layer 140-1 can be prevented during various processes performed after the formation of the capping layer 140-1.

The thickness of the second layer 142 may be 30 to 300 nm. If the thickness of the second layer 142 is less than 30 nm, the deformation prevention effect of the capping layer 140-1 may be reduced. If the thickness of the second layer 142 is greater than 300 nm, the stress of the thin film may increase.

The middle layer 143 may be disposed between the first layer 141 and the second layer 142. The middle layer 143 may be made of a single layer or multiple layers. The middle layer 143 may be composed of 1 to 6 layers (the middle layer 143 may be omitted, but since it is the configuration of FIG. 3B, it will be described later.). If the number of intermediate layers 143 is more than six, process time and process complexity may increase and process efficiency may decrease.

The intermediate layer 143 may include at least one first intermediate layer 143a containing Ni. At this time, one of the first intermediate layers 143a may be directly disposed on the first layer 141. Additionally, the intermediate layer 143 may further include at least one second intermediate layer 143b containing Ti. Of course, the second intermediate layer 143b may be omitted. When the middle layer 143 includes a plurality of first middle layers 143a and second middle layers 143b, the first middle layers 143a and second middle layers 143b may be alternately arranged.

As such, in the embodiment of FIG. 3A, the capping layer 140-1 may be formed of 3 to 8 layers (the capping layer may be formed of one or two layers, but since this is the configuration of FIGS. 3B and 3D, it will be described later) Do it.). Here, the middle layer 143 may be composed of 1 to 6 layers. Additionally, the middle layer 143 may include 1 to 3 first middle layers 143a. Additionally, the middle layer 143 may include 0 to 3 second middle layers 143b.

The current injection efficiency of the capping layer 140-1 may increase as the number of layers forming the middle layer 143 increases. That is, since the capping layer 140-1 supplies current to the second conductive semiconductor layer 112, current injection efficiency may increase as the thickness of the capping layer 140-1 increases.

At this time, within the capping layer 140-1, a layer containing Ti (the first layer 141 or the second intermediate layer 143b) is alternately arranged with a layer containing Ni (the first intermediate layer 143a). It can be. In this way, when multiple different layers are alternately stacked, stress can be alleviated compared to forming a single layer thickly. Therefore, even if the thickness of the entire capping layer 140-1 increases, the stress of the thin film can be alleviated and current injection efficiency can be improved.

Referring to FIG. 3B, the capping layer 140-2 according to the second embodiment of the present invention may include a first layer 141 and a second layer 142. The first layer 141 and the second layer 142 may have the same configuration as described above. That is, the capping layer 140-2 shown in FIG. 3B may be obtained by omitting the middle layer 143 from the capping layer 140-1 shown in FIG. 3A.

Referring to FIG. 3C, the capping layer 140-3 according to the third embodiment of the present invention may include a first layer 141 and an intermediate layer 143. The first layer 141 and the middle layer 143 may have the same configuration as described above. That is, the capping layer 140-3 shown in FIG. 3C may be obtained by omitting the second layer 142 from the capping layer 140-1 shown in FIG. 3A.

Referring to FIG. 3D, the capping layer 140-4 according to the fourth embodiment of the present invention may include a first layer 141. The first layer 141 may have the same configuration as described above. That is, the capping layer 140-4 shown in FIG. 3D may be obtained by omitting the second layer 142 and the middle layer 143 from the capping layer 140-1 shown in FIG. 3A.

As shown in FIGS. 3A to 3D, the capping layer 140 may be composed of at least one layer. Preferably, the capping layer 140 may be composed of 1 to 8 layers. At this time, the middle layer 143 within the capping layer 140 may be composed of 1 to 6 layers. If the capping layer 140 includes more than eight layers, process time and process complexity may increase, thereby reducing process efficiency.

Specifically, the capping layer 140 is Ti, Ti/Au, Ti/Ni, Ti/Ni/Au, Ti/Ni/Ti, Ti/Ni/Ti/Au, Ti/Ni/Ti/Ni, Ti/Ni /Ti/Ni/Au, Ti/Ni/Ti/Ni/Ti, Ti/Ni/Ti/Ni/Ti/Au, Ti/Ni/Ti/Ni/Ti/Ni, Ti/Ni/Ti/Ni/Ti /Ni/Au, Ti/Ni/Ti/Ni/Ti/Ni/Ti, Ti/Ni/Ti/Ni/Ti/Ni/Ti/Au.

The total thickness of the capping layer 140 may be 100 to 2000 nm. At this time, regardless of the number of layers the capping layer 140 includes, the total thickness of the capping layer 140 may be at least 100 nm or more. For example, even if the capping layer 140 consists of only one or two small layers, the thickness of the capping layer 140 may be at least 100 nm. If the thickness of the capping layer 140 is less than 100 nm, the current injection efficiency and the protection effect of the reflective layer 132 may be reduced. If the thickness of the capping layer 140 is greater than 2000 nm, process time and process complexity may increase, thereby reducing process efficiency. Additionally, if the thickness of the capping layer 140 is greater than 2000 nm, the stress of the thin film may increase.

The thickness of the first layer 141 in the capping layer 140 may be 30 to 300 nm. When the thickness of the first layer 141 is less than 30 nm, a material (eg, Ni) included in the middle layer 143 may diffuse into the reflective layer 132. In this case, a dark spot (eg, a region where Ni is diffused) may be created in the reflective layer 132 and the reflectance may be reduced. If the thickness of the first layer 141 is greater than 300 nm, the stress of the first layer 141 may increase.

The thickness of the first intermediate layer 143a and the second intermediate layer 143b may be 10 to 300 nm. If the thickness of the first intermediate layer 143a is less than 10 nm, the stress relieving effect of alternately stacking different layers may be minimal. If the thickness of the first intermediate layer 143a is greater than 300 nm, the stress of the thin film may increase.

The thickness ratio of the first layer 141 and the first intermediate layer 143a may be 1:1 to 3:1. When the thickness ratio of the first layer 141 and the first middle layer 143a is less than 1:1, the material contained in the middle layer 143 may diffuse into the reflective layer 132. If the thickness ratio of the first layer 141 and the first intermediate layer 143a is greater than 3:1, the thickness of the first layer 141 may become relatively too large and stress may increase.

The thickness ratio of the first intermediate layer 143a and the second intermediate layer 143b may be 1:1 to 1:3. When the thickness ratio of the first intermediate layer 143a and the second intermediate layer 143b is less than 1:1, the material contained in the first intermediate layer 143a may diffuse. If the thickness ratio of the first intermediate layer 143a and the second intermediate layer 143b is greater than 1:3, the thickness of the second intermediate layer 143b may become relatively too large and stress may increase.

Figure 4 is a conceptual diagram of a semiconductor device according to a second embodiment of the present invention. FIGS. 5A and 5B are diagrams for explaining a configuration in which light output is improved according to a change in the number of recesses. Figure 6a is an enlarged view of part B of Figure 4. Figure 6b is a modified example of Figure 6a.

Referring to FIG. 4 , it may include a light emitting structure 110, a plurality of recesses R, a first electrode 221, a second electrode 122, a reflective layer 132, and a capping layer 140.

The configuration of the light emitting structure 110 described in FIG. 1 may be applied as is. Irregularities may be formed on the upper surface of the light emitting structure 110. These irregularities can improve the extraction efficiency of light emitted from the light emitting structure 110. The average height of the unevenness may vary depending on the wavelength of ultraviolet rays. In the case of UV-C, it has a height of about 300 nm to 800 nm, and light extraction efficiency can be improved when it has an average height of about 500 nm to 600 nm.

A plurality of recesses R may be disposed from one side of the second conductive semiconductor layer 112 to a partial area of the first conductive semiconductor layer 111 through the active layer 113 . A first insulating layer 251 and a second insulating layer 252 are disposed inside the recess (R) to electrically connect the first conductive layer 231 to the second conductive semiconductor layer 112 and the active layer 113. It can be insulated.

The first electrode 221 may be disposed on the upper surface of the recess R and electrically connected to the first conductivity type semiconductor layer 111. The first electrode 221 may be exposed by the first insulating layer 251 and electrically connected to the first conductive semiconductor layer 111. The first electrode 221 may be electrically insulated from the active layer 113 and the second conductive semiconductor layer 112 by the first insulating layer 251. The first electrode 221 may be an ohmic electrode.

The first electrode 221 is made of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), and indium gallium tin (IGTO). oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, or Ni/IrOx/Au/ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg, Zn, Pt , Au, and Hf, but is not limited to these materials.

The second electrode 122 may be formed on the second conductive semiconductor layer 112. The second electrode 122 is exposed by the first insulating layer 251 and is electrically connected to the second conductive semiconductor layer 112. The second electrode 122 may be an ohmic electrode. The second electrode 122 may have the same configuration as that shown in FIG. 1 .

In addition, as described above, the surface layer of the second conductive semiconductor layer 112 in contact with the second electrode 122 has an aluminum composition of 1% to 10%, so current injection can be facilitated.

The first conductive layer 231 may be disposed along the lower surface of the light emitting structure 110 and the shape of the recess (R). The first conductive layer 231 may be electrically insulated from the capping layer 140 by the second insulating layer 252 . The first conductive layer 231 may penetrate the second insulating layer 252 and be electrically connected to the first electrode 221.

The first conductive layer 231 may be made of a material with excellent reflectivity. Exemplarily, the first conductive layer 231 may include aluminum. When the first conductive layer 231 includes aluminum, it serves to reflect light emitted from the active layer 113 upward, thereby improving light extraction efficiency.

The second conductive layer 132 (hereinafter referred to as a reflective layer) may be disposed to cover the second electrode 122. The reflective layer 132 may contact the side and bottom surfaces of the first insulating layer 251. When the reflective layer 132 is in contact with the side and bottom surfaces of the first insulating layer 251, the thermal and electrical reliability of the second electrode 122 can be improved. The reflective layer 132 may be made of a material that has good adhesion to the first insulating layer 251. The reflective layer 132 can improve light extraction efficiency by reflecting light emitted between the first insulating layer 251 and the second electrode 122 upward. The reflective layer 132 may have the same configuration as shown in FIG. 1 .

The capping layer 140 may be disposed on the reflective layer 132 . The capping layer 140 may be disposed to cover the reflective layer 132 . The capping layer 140 may have the same configuration as shown in FIG. 1 . Additionally, the capping layer 140 may have any configuration selected from FIGS. 3A to 3D.

The first insulating layer 251 and the second insulating layer 252 may be formed by selecting at least one from the group consisting of SiO2, SixOy, Si3N4, SixNy, SiOxNy, Al2O3, TiO2, AlN, etc., but are not limited thereto. . The first insulating layer 251 and the second insulating layer 252 may be formed as a single layer or multiple layers. For example, the first and second insulating layers 251 and 252 may be a distributed Bragg reflector (DBR) with a multilayer structure including silver Si oxide or Ti compound. However, the first and second insulating layers 251 and 252 are not necessarily limited to this and may include various reflective structures.

When the first and second insulating layers 251 and 252 perform a reflective function, light emitted from the active layer 113 toward the side is reflected upward, thereby improving light extraction efficiency. Compared to semiconductor devices that emit blue light, ultraviolet semiconductor devices may have more effective light extraction efficiency as the number of recesses (R) increases.

In particular, the change in light output according to the number of recesses will be described with reference to FIGS. 5A and 5B as follows.

FIGS. 5A and 5B may be a plan view of the semiconductor device 200 of FIG. 4 with the light emitting structure 110 omitted. That is, the first electrode 221 may be disposed at the center of the recess (R). Additionally, the recess R may be spaced apart from the second electrode 122 by the space L.

Referring to FIG. 5A, the current is distributed only to points near each first electrode 221, and the current density may rapidly decrease at points that are far away. Accordingly, the effective light emission area P1 may be narrowed.

The effective light emitting area (P1) can be defined as an area from the current density at the center of the first electrode 221, where the current density is highest, to a boundary point where the current density is 40% or less. For example, the effective light emitting area P1 can be adjusted according to the level of the injection current and the composition of Al within a range of 40㎛ from the center of the recess R.

The low current density region (P2) may hardly contribute to light emission due to its low current density. Accordingly, in the embodiment, the light output can be improved by further arranging the first electrode 221 in the low current density region P2 or by using a reflective structure.

In general, in the case of GaN-based semiconductor devices that emit blue light, current dispersion characteristics are relatively excellent, so it is desirable to minimize the areas of the recess (R) and the first electrode 221. This is because as the area of the recess (R) and the first electrode 221 increases, the area of the active layer 113 decreases.

However, in the case of the embodiment, the current dispersion characteristics are relatively poor due to the high composition of aluminum, so the low current density region P2 is reduced by increasing the number of first electrodes 221 even if the area of the active layer 113 is sacrificed. Alternatively, it may be desirable to place a reflective structure in the low current density area (P2).

Referring to FIG. 5B, when the number of recesses (R) is 48, the recesses (R) may not be arranged in a straight line in the horizontal and vertical directions, but may be arranged in a zigzag manner. In this case, the area of the low current density region (P2) becomes narrower, allowing most of the active layer to participate in light emission.

When the number of recesses (R) is 70 to 110, current can be distributed more efficiently, resulting in lower operating voltage and improved light output. In a semiconductor device that emits UV-C, if the number of recesses (R) is less than 70, the electrical and optical properties may deteriorate, and if the number of recesses (R) is more than 110, the electrical properties may improve, but the volume of the light-emitting layer is reduced, thereby reducing the optical properties. This may deteriorate. At this time, the diameter of the recess (R) may be 20㎛ to 70㎛.

Meanwhile, a second electrode pad 260 may be disposed in one corner area of the semiconductor device 200. The second electrode pad 260 may be electrically connected to the reflective layer 132 and the second electrode 122 through the first insulating layer 251. That is, the second electrode pad 260, the reflective layer 132, and the second electrode 122 may form one electrical channel. Additionally, the second electrode pad 260 is electrically insulated from the first conductive layer 231 by the second insulating layer 252.

The second electrode pad 260 may have a recessed central portion and a concave portion and a convex portion on the upper surface. A wire (not shown) may be bonded to the concave portion of the second electrode pad 260. Accordingly, the adhesion area is expanded so that the second electrode pad 260 and the wire can be more firmly bonded.

The second electrode pad 260 may function to reflect light. Accordingly, the closer the second electrode pad 260 is to the light emitting structure 110, the more the light extraction efficiency of the semiconductor device 200 can be improved. Additionally, the height of the convex portion of the second electrode pad 260 may be higher than that of the active layer 113. Accordingly, the second electrode pad 260 can improve light extraction efficiency and control the beam angle by reflecting light emitted from the active layer 113 in the horizontal direction of the device upward.

A bonding layer 270 may be further disposed along the lower surface of the light emitting structure 110 and the shape of the recess (R). The bonding layer 270 may be formed on the first conductive layer 231. The bonding layer 270 may include a conductive material. Exemplarily, the bonding layer 270 may include a material selected from the group consisting of gold, tin, indium, aluminum, silicon, silver, nickel, and copper, or an alloy thereof.

A substrate 280 may be disposed on the bonding layer 270. The substrate 280 may be made of a conductive material. By way of example, the substrate 280 may include a metal or semiconductor material. Additionally, the substrate 280 may be a metal with excellent electrical conductivity and/or thermal conductivity. Illustratively, the substrate 280 may include a material selected from the group consisting of silicon, molybdenum, silicon, tungsten, copper, and aluminum, or an alloy thereof. In this case, the heat generated during the operation of the semiconductor device can be quickly released to the outside.

A passivation layer 290 may be formed on the top and side surfaces of the light emitting structure 110. The passivation layer 290 may contact the first insulating layer 251 in an area adjacent to the second electrode 122.

Referring to FIG. 6A, the end of the second electrode 122 and the end of the reflective layer 132 may be spaced apart by a separation distance D4. Specifically, with respect to the center C2 (FIG. 4) of the second electrode 122, the end of the reflective layer 132 may be disposed to be longer than the end of the second electrode 122. Since the reflective layer 132 is disposed up to the side of the second electrode 122, light emitted toward the side of the second electrode 122 is reflected upward, thereby improving light extraction efficiency.

The separation distance D4 between the end of the second electrode 122 and the end of the reflective layer 132 may be 2.5 to 5 μm. If the separation distance (D4) is less than 2.5㎛, the reflectance may decrease. If the separation distance D4 is greater than 5 ㎛, stress may increase in the corner area of the reflective layer 132, and reflection efficiency may hardly increase.

The end of the reflective layer 132 and the end of the capping layer 140 may be spaced apart by a separation distance D5. Specifically, based on the center C2 (FIG. 4) of the reflective layer 132, the end of the capping layer 140 may be disposed to be longer than the end of the reflective layer 132. Since the capping layer 140 is disposed to the side of the reflective layer 132, the protective effect of the reflective layer 132 can be further increased.

The separation distance D5 between the end of the reflective layer 132 and the end of the capping layer 140 may be 2.5 to 5 μm. If the separation distance (D5) is less than 2.5㎛, the current injection efficiency and the protective effect of the reflective layer may decrease. If the separation distance D5 is greater than 5 ㎛, stress may increase in the corner area of the capping layer 140.

Figure 6b is a modified example of Figure 6a.

Referring to FIG. 6B, the end of the second electrode 122 and the end of the reflective layer 132 may be spaced apart by a separation distance D6. At this time, the separation distance D6 may be 2.5 to 5 μm. Additionally, the end of the second electrode 122 and the end of the capping layer 140 may be spaced apart from each other by a distance smaller than the separation distance D6. Of course, the end of the second electrode 122 and the end of the capping layer 140 may be spaced apart by the separation distance D6.

That is, in FIG. 6B, the end of the capping layer 140 may be formed closer to the end of the reflective layer 132, based on the center C2 (FIG. 4). Additionally, the ends of the reflective layer 132 and the capping layer 140 may be located on the same line. This is because, in the case of the outer surface of the reflective layer 132, the degree of influence on reflection efficiency is minimal, so it may be meaningless to cover it with the capping layer 140.

That is, in the embodiment of the present invention, the reflective layer 132 is disposed to completely cover the second electrode 122, thereby contributing to improvement of reflectance. Additionally, the protection effect of the reflective layer 132 may be improved by the capping layer 140 covering the upper surface of the reflective layer 132 or the entire reflective layer 132 .

7 is a conceptual diagram of a semiconductor package according to an embodiment of the present invention.

Semiconductor devices are packaged and can be used for curing resin, resist, SOD, or SOG. Alternatively, semiconductor devices may be used for treatment or medical purposes, or for sterilization of air purifiers or water purifiers.

Referring to FIG. 7, the semiconductor device package includes a body 2 in which a groove 3 is formed, a semiconductor device 1 disposed in the body 2, and a semiconductor device 1 disposed in the body 2 and electrically connected to the semiconductor device 1. It may include a pair of lead frames 5a and 5b that are connected. The semiconductor device 1 may include all of the above-described configurations.

The body 2 may include a material or coating layer that reflects ultraviolet light. The body 2 can be formed by stacking a plurality of layers 2a, 2b, 2c, 2d, and 2e. The plurality of layers 2a, 2b, 2c, 2d, and 2e may be made of the same material or may include different materials.

The groove 3 becomes wider as it moves away from the semiconductor device, and a step 3a may be formed on the inclined surface.

The light-transmitting layer 4 may cover the groove 3. The light transmitting layer 4 may be made of glass, but is not necessarily limited thereto. The light transmitting layer 4 is not particularly limited as long as it is made of a material that can effectively transmit ultraviolet light. The interior of the groove (3) may be empty space.

<Experimental example>

reflective layer observe

Figures 8a and 8b show the reflection layer observed by changing the structure of the capping layer in a semiconductor device.

In Figure 8a, the capping layer was configured as disclosed in the present invention, and in Figure 8b, the middle layer among the capping layers was configured differently. That is, Figures 8a and 8b show the results of manufacturing samples with different capping layer structures, heat-treating them at 300°C, and observing them with an optical microscope. Figure 8a is the result of observing the reflective layer with an optical microscope at 200 times magnification. Figure 8b (a) is the result of observing the reflective layer with an optical microscope at 200 times magnification, and (b) is the result of observing the reflective layer at 1000 times magnification.

More specifically, in the case of Figure 8a, the second electrode/joining layer/reflecting layer/capping layer was composed of ITO/Cr/Al/Ti/Ni/Ti/Ni/Au. In the case of Figure 8b, the second electrode/bonding layer/reflection layer/capping layer was composed of ITO/Cr/Al/Ni/Ti/Ni/Au. That is, in the case of FIG. 8A, the layer of the capping layer (first layer) in direct contact with the reflective layer was made of Ti, and in the case of FIG. 8B, the layer of the capping layer in direct contact with the reflective layer was made of Ni.

Referring to FIG. 8A, when the first layer of the capping layer was made of Ti, no dark spots were observed on the reflective layer. That is, the first layer can prevent the materials of the capping layer (eg, Ni) from diffusing into the reflective layer.

Referring to Figure 8b, when the first layer of the capping layer was composed of Ni, a number of dark spots were observed on the reflective layer. That is, since the first layer is formed of Ni, it can be seen that the materials (for example, Ni) present in the capping layer diffuse into the reflective layer, and dark spots (Ni diffused into the reflective layer) are observed. In particular, in the case of FIG. 8B, since the reflective layer and the first layer (Ni) are in direct contact, Ni can be diffused more easily.

Reflectance measurements

Table 1 shows the measurement of reflectance by configuring the second electrode/bonding layer/reflection layer/capping layer (first layer). Comparative Examples 1 and 2 used Ni as the first layer, and Example 1 used Ti as the first layer. Additionally, Comparative Example 1 shows the reflectance before heat treatment, and Comparative Example 2 and Example 1 show the reflectance after heat treatment.

structure Reflectance (%) @280nm Comparative Example 1 ITO/Cr/Al/Ni 41.2 Comparative Example 2 (Heat Treatment) ITO/Cr/Al/Ni 35.7 Example 1 (heat treatment) ITO/Cr/Al/Ti 49.8

Referring to Comparative Example 1 and Comparative Example 2, it can be seen that the reflectance decreases further after heat treatment even if it is made of the same material. This is because diffusion of Ni can become more active through heat treatment. In other words, it can be seen that after heat treatment, more dark spots are created in the reflective layer and the reflectance decreases. Since semiconductor devices can be exposed to high temperature environments during various processes, it is important to secure an appropriate level of reflectivity even after heat treatment.

In the case of Example 1, although the reflectance was measured after heat treatment, the reflectance was higher than that of Comparative Example 1 before heat treatment. That is, by applying Ti as the capping layer (first layer), the creation of dark spots in the reflective layer can be suppressed and improved reflectance can be obtained.

As such, in an embodiment of the present invention, among the capping layers, the first layer in direct contact with the reflective layer may be made of Ti. The present invention can prevent substances in the capping layer from diffusing into the reflective layer by using the first layer. Therefore, the reflectance can be improved by preventing dark spots from being created in the reflective layer.

Semiconductor devices can be used as a light source for a lighting system, a light source for an image display device, or a light source for a lighting device. In other words, the semiconductor device can be applied to various electronic devices that are placed in a case and provide light. For example, when using a mixture of semiconductor devices and RGB phosphors, white light with excellent color rendering (CRI) can be implemented.

The above-described semiconductor device is composed of a light-emitting device package and can be used as a light source for a lighting system. For example, it can be used as a light source for an image display device or a lighting device.

When used as a backlight unit for a video display device, it can be used as an edge-type backlight unit or a direct-type backlight unit. When used as a light source for a lighting device, it can be used as a luminaire or bulb type. It can also be used as a light source for a mobile terminal. It may be possible.

Light-emitting devices include laser diodes in addition to the light-emitting diodes described above.

The laser diode, like the light emitting device, may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer of the above-described structure. In addition, the electro-luminescence phenomenon, in which light is emitted when a p-type first conductivity type semiconductor and an n-type second conductivity type semiconductor are bonded and an electric current flows, is used, but the directionality of the emitted light is different. There is a difference in phase. In other words, a laser diode can emit light with one specific wavelength (monochromatic beam) with the same phase and in the same direction by using a phenomenon called stimulated emission and constructive interference. Therefore, it can be used in optical communications, medical equipment, and semiconductor processing equipment.

An example of a light receiving element is a photodetector, which is a type of transducer that detects light and converts the intensity into an electrical signal. Such photodetectors include photocells (silicon, selenium), light output devices (cadmium sulfide, cadmium selenide), photodiodes (e.g., PDs with a peak wavelength in the visible blind spectral region or true blind spectral region), and photovoltaic devices (PDs). Examples include transistors, photomultiplier tubes, photoelectron tubes (vacuum, gas-encapsulated), IR (Infra-Red) detectors, etc., but embodiments are not limited thereto.

Additionally, semiconductor devices such as photodetectors can generally be manufactured using direct bandgap semiconductors, which have excellent light conversion efficiency. Alternatively, photodetectors have various structures, and the most common structures include a pin-type photodetector using a p-n junction, a Schottky-type photodetector using a Schottky junction, and a MSM (Metal Semiconductor Metal) type photodetector. there is.

A photodiode, like a light emitting device, may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer of the structure described above, and may have a pn junction or pin structure. The photodiode operates by applying a reverse bias or zero bias, and when light is incident on the photodiode, electrons and holes are created and a current flows. At this time, the size of the current may be approximately proportional to the intensity of light incident on the photodiode.

A photovoltaic cell, or solar cell, is a type of photodiode that can convert light into electric current. The solar cell, like the light emitting device, may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer having the above-described structure.

In addition, it can be used as a rectifier in electronic circuits through the rectification characteristics of a general diode using a p-n junction, and can be applied to ultra-high frequency circuits and oscillator circuits.

In addition, the above-described semiconductor device is not necessarily implemented only as a semiconductor and may further include a metal material in some cases. For example, a semiconductor device such as a light receiving device may be implemented using at least one of Ag, Al, Au, In, Ga, N, Zn, Se, P, or As, and may be implemented using a p-type or n-type dopant. It may also be implemented using doped semiconductor materials or intrinsic semiconductor materials.

Although the above description focuses on the examples, this is only an example and does not limit the present invention, and those skilled in the art will be able to You will see that various variations and applications are possible. For example, each component specifically shown in the examples can be modified and implemented. And these variations and differences in application should be construed as being included in the scope of the present invention as defined in the appended claims.

100, 200; semiconductor device 110; light emitting structure
111; first conductive semiconductor layer 112; Second conductive semiconductor layer
113; active layer 122; second electrode
132; reflective layer 140; capping layer
141; 1st floor 142; second floor
143; middle layer 221; first electrode

Claims (17)

A light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer;
a first electrode electrically connected to the first conductive semiconductor layer;
a second electrode electrically connected to the second conductive semiconductor layer;
a reflective layer disposed on the second electrode; and
A capping layer disposed on the reflective layer and including a plurality of layers,
The capping layer includes a first layer disposed directly on the reflective layer, is disposed to cover the entire surface of the reflective layer, and is in contact with the second conductivity type semiconductor layer,
The reflective layer is disposed to cover the entire surface of the second electrode, and both ends of the reflective layer are in contact with the second conductive semiconductor layer,
A semiconductor device wherein the first layer includes Ti. A light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer;
a first electrode electrically connected to the first conductive semiconductor layer;
a transparent electrode electrically connected to the second conductive semiconductor layer and including ITO;
a reflective layer disposed on the transparent electrode and containing Al; and
A capping layer disposed on the reflective layer and including a plurality of layers,
The capping layer is,
a first layer disposed directly on the reflective layer and comprising Ti; and an intermediate layer disposed on the first layer and including a plurality of layers, disposed to cover the entire surface of the reflective layer, and in contact with the second conductivity type semiconductor layer,
The reflective layer is disposed to cover the entire surface of the transparent electrode, and both ends of the reflective layer are in contact with the second conductive semiconductor layer,
the intermediate layer is disposed directly on the first layer and includes a first intermediate layer comprising Ni,
A semiconductor device wherein the thickness ratio of the first layer and the first intermediate layer is 1:1 to 3:1. According to claim 1,
The capping layer is a semiconductor device comprising 1 to 8 layers. According to claim 1,
The capping layer further includes a second layer disposed on the first layer, and the second layer includes Au. In clause 4
The first layer is disposed on one side of the capping layer, and the second layer is disposed on the other side of the capping layer. According to claim 1,
The capping layer is disposed on the first layer and further includes an intermediate layer including a plurality of layers. According to claim 6,
The intermediate layer is a semiconductor device comprising 1 to 6 layers. According to claim 6,
A semiconductor device wherein the intermediate layer includes at least one first intermediate layer containing Ni. According to claim 8,
A semiconductor device wherein one of the at least one first intermediate layer is disposed directly on the first layer. According to claim 8,
A semiconductor device wherein the thickness ratio of the first layer and the first intermediate layer is 1:1 to 3:1. According to claim 8,
The semiconductor device wherein the intermediate layer further includes at least one second intermediate layer containing Ti. According to claim 11,
A semiconductor device wherein the first intermediate layer and the second intermediate layer are alternately arranged. According to claim 11,
A semiconductor device wherein the thickness ratio of the first intermediate layer and the second intermediate layer is 1:1 to 1:3. According to claim 1,
A semiconductor device wherein, with respect to the center of the second electrode, an end of the reflective layer is disposed longer than an end of the second electrode. According to claim 1,
A semiconductor device further comprising a bonding layer between the second electrode and the reflective layer. According to claim 1,
The light emitting structure further includes a plurality of recesses disposed through the second conductive semiconductor layer and the active layer to a partial area of the first conductive semiconductor layer,
The first electrode is a semiconductor device disposed inside the plurality of recesses. body; and
Including a semiconductor element disposed in the body,
The semiconductor device is,
A light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer;
a first electrode electrically connected to the first conductive semiconductor layer;
a second electrode electrically connected to the second conductive semiconductor layer;
a reflective layer disposed on the second electrode; and
A capping layer disposed on the reflective layer and including a plurality of layers,
The capping layer includes a first layer disposed directly on the reflective layer, is disposed to cover the entire surface of the reflective layer, and is in contact with the second conductivity type semiconductor layer,
The reflective layer is disposed to cover the entire surface of the second electrode, and both ends of the reflective layer are in contact with the second conductive semiconductor layer,
A semiconductor device package wherein the first layer includes Ti.

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