KR20160092635A - Nano imprint mold manufacturing method, light emitting diode manufacturing method and light emitting diode using the nano imprint mold manufactured by the method - Google Patents
Nano imprint mold manufacturing method, light emitting diode manufacturing method and light emitting diode using the nano imprint mold manufactured by the method Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims description 64
- 239000004065 semiconductor Substances 0.000 claims abstract description 90
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- 229920002120 photoresistant polymer Polymers 0.000 claims description 15
- 238000000025 interference lithography Methods 0.000 claims description 9
- 238000003486 chemical etching Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 238000003825 pressing Methods 0.000 claims description 6
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N CuO Inorganic materials [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000012153 distilled water Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000000313 electron-beam-induced deposition Methods 0.000 claims description 2
- 239000011259 mixed solution Substances 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
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- 238000007598 dipping method Methods 0.000 claims 1
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- 239000002086 nanomaterial Substances 0.000 description 4
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- B82B3/0009—Forming specific nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
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Abstract
The present invention relates to a nanoimprint mold manufacturing method, a light emitting diode using the same, and a manufacturing method thereof.
A method of manufacturing a light emitting diode according to the present invention includes the steps of forming an n-type nitride semiconductor layer, a light emitting layer and a p-type nitride semiconductor layer on a temporary substrate, forming a p-type reflective electrode on the p- Forming a nanoimprinted resist layer on the n-type nitride semiconductor layer, forming a nanoimprint mold according to the present invention, forming a nanoimprint layer on the n-type nitride semiconductor layer, A step of separating a nanoimprinted mold from a nanoimprinted resist layer on which a nano pattern is formed, a step of separating the nano imprint mold from the nano imprinted resist layer, Etching the part of the imprint resist layer to form the n-type electrode It is open configuration.
According to the present invention, there is provided a method of manufacturing a nanoimprint mold capable of efficiently and economically forming a nano pattern for improving light extraction efficiency of a light emitting diode, a method of manufacturing a light emitting diode using the nanoimprint mold, have.
Description
The present invention relates to a nanoimprint mold manufacturing method, a light emitting diode manufacturing method using a nanoimprint mold manufactured by the method, and a light emitting diode manufactured by the method.
White light source Gallium nitride light emitting diode has high energy conversion efficiency, long life, high directivity of light, low voltage drive, no preheating time and complicated driving circuit, strong against impact and vibration, It is expected to be a solid-state lighting light source that can replace existing light sources such as incandescent lamps, fluorescent lamps, and mercury lamps in the near future by enabling high-quality lighting systems.
In order to replace gallium nitride light emitting diode as a conventional white light source in place of conventional mercury vapor lamp or fluorescent lamp, it is required not only to have excellent thermal stability but also to emit high output light even at low power consumption.
A gallium nitride based light emitting diode having a horizontal structure widely used as a white light source is advantageous in that it has a relatively small manufacturing cost and a simple manufacturing process but it is disadvantageous in that it is not suitable for use as a high output light source having a high applied current and a large area .
A vertically structured light emitting diode is a device that overcomes the disadvantages of such a horizontal light emitting diode and is easy to apply a large area high output light emitting diode.
Such a vertically structured light emitting diode has various advantages in comparison with a conventional horizontal structure element.
In the vertical structure light emitting diode, since the current diffusion resistance is small, a very uniform current diffusion can be obtained, a lower operating voltage and a large light output can be obtained, and heat can be released smoothly through a metal or semiconductor substrate having good thermal conductivity. Long device life and significantly improved high power operation are possible.
Since the maximum applied current is increased by 3 to 4 times as much as that of the horizontal structure light emitting diode in the vertical type light emitting diode, it has been confirmed that it will be widely used as a white light source for illumination. Currently, Nichia chemical company in Japan, Philips Lumileds company in USA, Osram Domestic companies such as Seoul Semiconductor, Samsung Electro-Mechanics and LG Innotek are actively researching and developing gallium nitride vertical light emitting diodes for commercialization and performance improvement, and some companies such as Osram have already And sells related products.
In the production of the gallium nitride-based vertical light emitting diode, the portion where the light output of the device can be greatly improved is the n-type semiconductor layer on the device.
When the n-type semiconductor layer is smooth and planar, the refractive index of the n-type semiconductor layer is 2.4 or less and the refractive index of the atmosphere is 1 owing to a large refractive index difference between the n-type semiconductor layer and the atmosphere. The total reflection occurs at the interface and a large part of the light generated in the active layer, that is, the light emitting layer, can not escape to the outside, so that a high light output can not be expected.
Therefore, it is necessary to artificially deform the surface of the n-type semiconductor layer to prevent the total reflection from occurring, thereby allowing the light to escape to the outside with a minimum loss.
In this respect, if the surface of the n-type semiconductor layer is formed with a pyramidal nanostructure on the surface of the n-type semiconductor layer by wet etching using a basic solution such as KOH or NaOH, the light extraction efficiency of the light emitting diode can be remarkably improved have.
However, the conventional method of directly forming the pyramid structure on the n-type semiconductor layer using the wet etching requires additional protective film formation process to protect the n-type electrode, the conductive substrate, the light emitting diode mesa structure, and the like during the wet etching process. And it is difficult to form a uniform nanostructure on a large area.
Open Patent Publication No. 10-2012-0077209 (July 10, 2012)
Disclosed herein is a method for manufacturing a nanoimprint mold capable of efficiently and economically forming a nano pattern for improving light extraction efficiency of a light emitting diode, a method for manufacturing a light emitting diode using the nanoimprint mold, and a light emitting diode do.
It is another object of the present invention to provide a method of manufacturing a light emitting diode capable of efficiently and precisely forming a nano pattern for improving light extraction efficiency without using a separate wet etching and dry etching and a light emitting diode manufactured by the method It is a technical task.
It is another object of the present invention to provide a light emitting diode having a high light extraction efficiency by forming a nano pattern on a large area at a low cost through a simplified process and a method for manufacturing the same.
According to an aspect of the present invention, there is provided a method of manufacturing a nanoimprint mold, comprising: forming a nano-pattern in the form of a columnar groove on a substrate through metal-assisted chemical etching; Transferring a nano pattern in a columnar groove shape formed on the substrate to a nanoimprint mold by a nanoimprinting method to form a columnar nano pattern inverted in the nano pattern in the nano imprint mold; And separating the nanoimprint mold having the columnar nano patterns from the substrate.
In the method of manufacturing a nanoimprint mold according to the present invention, the chemical etching using the metal may include: forming a photoresist layer on one surface of the substrate; Forming a nano etch pattern on the photoresist layer through a laser interference lithography method; Depositing a metal layer on the photoresist layer in which the nano etch pattern is formed; And etching the substrate on which the metal layer is deposited by immersing the substrate in an etching solution to form the nano-pattern in the form of a columnar groove.
In the method of manufacturing a nanoimprint mold according to the present invention, in the laser interference lithography method, the incident angle of the laser is 5 to 45 degrees.
In the method of manufacturing a nanoimprint mold according to the present invention, the period of the pattern for nano etching formed by the laser interference lithography method is 250 nm to 1 um.
In the method of manufacturing a nanoimprint mold according to the present invention, the metal layer may include at least one of Au, Pt, Pd, and Ag.
In the method for manufacturing a nanoimprint mold according to the present invention, the metal layer is characterized in that at least one of electron beam deposition, thermal deposition, and sputter deposition is used.
In the method of manufacturing a nanoimprint mold according to the present invention, the etching solution is formed of a mixed solution of distilled water, hydrofluoric acid, and hydrogen peroxide.
In the nanoimprint mold manufacturing method according to the present invention, the concentration of the hydrofluoric acid is 3 to 5 mol, and the concentration of the hydrogen peroxide is 0.1 to 1 mol.
According to an aspect of the present invention, there is provided a method of manufacturing an LED, including: forming an n-type nitride semiconductor layer, a light emitting layer, and a p-type nitride semiconductor layer on a temporary substrate; Forming a p-type reflective electrode on the p-type nitride semiconductor layer; Forming a conductive substrate on the p-type reflective electrode; Removing the temporary substrate to expose the n-type nitride semiconductor layer; Forming a nanoimprinted resist layer on the n-type nitride semiconductor layer; A step of pressing a nano imprint mold having a columnar nano pattern on the nano imprint resist layer to transfer nano patterns in the form of columnar inverted regions to the nano imprint resist layer; Separating the nanoimprint mold from a nanoimprinted resist layer having a nano pattern formed in a columnar groove shape; And forming an n-type electrode by etching a part of the nanoimprinted resist layer in which the nano pattern of the columnar groove shape is formed.
In the method of manufacturing a light emitting diode according to an aspect of the present invention, the nanoimprint mold is manufactured by the nanoimprint mold manufacturing method according to the present invention.
In the method of fabricating a light emitting diode according to one aspect of the present invention, the n-type nitride semiconductor layer and the nano imprint resist layer may have a refractive index that is smaller than the refractive index of the n-type nitride semiconductor layer and larger than that of the nanoimprinted resist layer And forming a refractive index control layer.
According to an aspect of the present invention, there is provided a method of fabricating a light emitting diode, wherein the refractive index control layer is formed by sequentially laminating a first refractive index control layer and a second refractive index control layer which refract light from the light emitting layer at different refractive indexes .
In one embodiment of the present invention, the first refractive index control layer is formed on the n-type nitride semiconductor layer and the refractive index of the first refractive index control layer is smaller than the refractive index of the n-type nitride semiconductor layer The second refractive index control layer is formed on the first refractive index control layer and the refractive index of the second refractive index control layer is smaller than the refractive index of the first refractive index control layer and greater than the refractive index of the nanoimprinted resist layer .
A light emitting diode manufacturing method according to an aspect of the invention, the first refractive index adjustment layer is ZnO, Al-doped ZnO, In-doped ZnO, Ga-doped ZnO, ZrO 2, TiO 2, SiO 2, SiO, Al 2 O 3 , CuO x, and ITO.
In the method of manufacturing a light emitting diode according to an aspect of the present invention, the second refractive index control layer is an MgO-based oxide.
In the method of manufacturing a light emitting diode according to one aspect of the present invention, the MgO-based oxide constituting the second refractive index-controlling layer is a multi-component compound formed by adding another element to MgO.
In the method of manufacturing an LED according to an aspect of the present invention, the n-type electrode is formed by etching a part of the nanoimprint resist layer in which the nano pattern of the columnar groove shape is formed to expose the n-type nitride semiconductor layer, And a conductive material is deposited on the region.
According to another aspect of the present invention, there is provided a method of fabricating a light emitting diode including: forming an n-type nitride semiconductor layer, a light emitting layer, and a p-type nitride semiconductor layer on a substrate on which a pattern for scattering and reflecting incident light is formed; Exposing a part of the n-type nitride semiconductor layer by mesa etching a part of the p-type nitride semiconductor layer, the light emitting layer and the n-type nitride semiconductor layer; Forming a transparent electrode on the p-type nitride semiconductor layer; Forming a nanoimprinted resist layer on the transparent electrode; A step of pressing a nano imprint mold having a columnar nano pattern on the nano imprint resist layer to transfer nano patterns in the form of columnar inverted regions to the nano imprint resist layer; Separating the nanoimprint mold from a nanoimprinted resist layer having a nano pattern formed in a columnar groove shape; And etching a part of the nanoimprinted resist layer in which the nano patterns are formed to form a p-type reflective electrode and forming an n-type electrode on the n-type nitride semiconductor layer.
According to another aspect of the present invention, there is provided a method of manufacturing a light emitting diode, wherein the nanoimprint mold is manufactured by the method of manufacturing a nanoimprint mold according to the present invention.
According to another aspect of the present invention, there is provided a method of manufacturing a light emitting diode, wherein the transparent electrode is ITO.
In the method of fabricating a light emitting diode according to another aspect of the present invention, the p-type reflective electrode may be formed by etching a part of the nanoimprint resist layer in which the nano patterns of the columnar grooves are formed to expose the transparent electrode, And is formed by depositing a conductive material.
According to the present invention, there is provided a method of manufacturing a nanoimprint mold capable of efficiently and economically forming a nano pattern for improving light extraction efficiency of a light emitting diode, a method of manufacturing a light emitting diode using the nanoimprint mold, have.
The present invention also provides a method of manufacturing a light emitting diode capable of efficiently and precisely forming a nano pattern for improving light extraction efficiency without using a separate wet etching and dry etching, and a light emitting diode manufactured by the method.
In addition, a light emitting diode having a high light extraction efficiency by forming a nano pattern on a large area at a low cost through a simplified process and a manufacturing method thereof are provided.
FIG. 1 is a view for explaining a phenomenon in which light extraction efficiency is lowered due to total internal reflection occurring at the interface due to a difference in refractive index between a nitride semiconductor layer and the atmosphere in a conventional light emitting diode.
2 is a view for explaining the principle of improving the light extraction efficiency of a light emitting diode by forming a nanopattern on a light propagation path in the present invention.
FIGS. 3 to 10 are views illustrating a method of manufacturing a nanoimprint mold according to an embodiment of the present invention.
11 to 13 are views showing a method of manufacturing a light emitting diode according to a first embodiment of the present invention.
14 is a view illustrating a method of manufacturing a light emitting diode according to a second embodiment of the present invention.
The terms and words used in the present specification and claims should not be construed to be limited to ordinary or dictionary meanings, but the inventor may appropriately define the concept of the term to describe its invention in the best way Can be interpreted as meaning and concept consistent with the technical idea of the present invention.
It should be noted that the embodiments described in this specification and the configurations shown in the drawings are merely preferred embodiments of the present invention and do not represent all the technical ideas of the present invention, It should be understood that various equivalents and modifications may be present.
Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.
First, the effect of improving the light extraction efficiency according to the present invention will be described with reference to FIGS. 1 and 2 in comparison with the conventional case.
FIG. 1 is a view for explaining a phenomenon in which light extraction efficiency is lowered due to total internal reflection occurring at the interface due to a difference in refractive index between a nitride semiconductor layer and the atmosphere in a conventional light emitting diode.
As shown in FIG. 1, in the case of a semiconductor substrate having a smooth surface as in the conventional case, since the refractive index of the gallium nitride semiconductor substrate is about 2.5 and the refractive index of the atmosphere is 1, the difference in refractive index between the two layers is large, Is only 23.5 degrees. Accordingly, the light generated inside the semiconductor can not escape to the outside, and is extinguished inside, resulting in a problem that the light extraction efficiency is lowered.
2 is a view for explaining the principle of improving the light extraction efficiency of a light emitting diode by forming a nano pattern in the shape of a column on a light propagation path in the present invention.
As shown in FIG. 2, when a nanostructure in the form of a column is formed on the surface of the semiconductor layer, the probability that light is emitted to the atmosphere due to multiple scattering increases sharply, thereby remarkably improving the light extraction efficiency of the light emitting diode .
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIGS. 3 to 10 are views illustrating a method of manufacturing a nanoimprint mold according to an embodiment of the present invention.
A method of fabricating a nanoimprint mold according to an embodiment of the present invention includes forming a nano-pattern in the form of a columnar groove on a substrate made of silicon through metal-assisted chemical etching, A step of transferring a nano pattern having a columnar groove shape into a nanoimprinting mold by a nanoimprinting method to form a columnar nano pattern inverted in a nano pattern in a column groove shape in the nanoimprint mold, And separating the nanoimprint mold having the nano pattern formed thereon from the substrate.
The chemical etching using the metal may include forming a photoresist layer on one surface of the silicon substrate, forming a nano etching pattern on the photoresist layer by a laser interference lithography method, Depositing a metal layer on the patterned photoresist layer; and etching the substrate on which the metal layer is deposited by immersing the substrate in an etching solution to form the nano-pattern in the form of a columnar groove.
First, as shown in FIG. 3, a
Next, as shown in Fig. 4, a
For example, the lithographic method can use laser interference lithography.
The
In the laser interference lithography method, it is preferable that the angle of incidence of the laser is in the range of 5 to 45 degrees. If the angle of incidence of the laser is less than 5 degrees, the area where the interference occurs is very narrow, (Exposure time and developing time). When the angle of incidence of the laser is greater than 45 degrees, the strength of the interfering laser is very weak, theoretically, the process time becomes too long and it is difficult to apply to industrialization Because. P (period of the pattern) = wavelength / 2 sin.
Next, as shown in FIG. 5, a
For example, the
6 and 7, the
More specifically, the
At this time, the concentration of hydrofluoric acid is preferably 3 to 5 mol, and the concentration of hydrogen peroxide is preferably 0.1 mol to 1 mol.
When the concentration of hydrofluoric acid is less than 3 moles, the etching rate is too slow. When the concentration of hydrofluoric acid is more than 5 moles, the pattern formed on the
If the concentration of the hydrogen peroxide is less than 0.1, the etch rate is very slow. If the concentration of the hydrogen peroxide is more than 1 mol, the resolution of the pattern formed on the
As described below, a polymer mold for a nanoimprint, that is, a
8 and 9, a
Next, as shown in Fig. 10, the
Through the above process, a
11 to 13 are views showing a method of manufacturing a light emitting diode according to a first embodiment of the present invention.
11 to 13, the method of manufacturing a light emitting diode according to the first embodiment of the present invention includes the steps of forming an n-type
Specifically, first, an n-type
Next, a p-type
Next, the temporary substrate is removed to expose the n-type
Next, a nanoimprint resist
Next, the
Next, the
Next, a part of the nanoimprint resist
For example, the n-
Meanwhile, the method of fabricating a light emitting diode according to the first embodiment of the present invention may further include forming a refractive index control layer 180 to further increase the light extraction efficiency.
13, the n-type
The refractive index control layer 180 may be formed by sequentially laminating a first refractive
The first refractive
The first and second refractive index control layers 181 and 182 having refractive indices corresponding to the intermediate values of the refractive indexes of these layers are formed between the n-type
For example, the first refractive
The MgO-based oxide constituting the second refractive index-controlling layer 182 may be a multi-component compound formed by adding another element to MgO.
The refractive indices of these materials selected from the first and second refractive index control layers 181 and 182 are commonly set to a value between the refractive index of the n-type
14 is a view illustrating a method of manufacturing a light emitting diode according to a second embodiment of the present invention.
14, a method of manufacturing a light emitting diode according to a second embodiment of the present invention includes a step of forming an n-type nitride semiconductor layer on a
Specifically, an n-type
The
Next, a part of the p-type
Next, a
Next, the
Next, the
Next, a part of the nanoimprinted resist
For example, the p-
As described in detail above, according to the present invention, a nanoimprint mold manufacturing method capable of efficiently and economically forming a nano pattern for improving the light extraction efficiency of a light emitting diode, a method of manufacturing a light emitting diode using the nanoimprint mold, There is an effect that a diode is provided.
The present invention also provides a method of manufacturing a light emitting diode capable of efficiently and precisely forming a nano pattern for improving light extraction efficiency without using a separate wet etching and dry etching, and a light emitting diode manufactured by the method.
In addition, a light emitting diode having a high light extraction efficiency by forming a nano pattern on a large area at a low cost through a simplified process and a manufacturing method thereof are provided.
More specifically, the technique of the present invention is a technique of forming a pyramidal nanostructure using a nanoimprint method capable of a large-area process, and is immediately applicable to a manufacturing process of a light emitting diode. In addition, it can be applied not only to vertical structure but also to horizontal type light emitting diode. It can be manufactured in a simple process and dramatically improves the light output of light emitting diode, so that the time of solid light illumination using white light source gallium nitride light emitting diode It is energy-saving environment-friendly technology.
Although the preferred embodiments of the present invention have been disclosed for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims. In addition, it is a matter of course that various modifications and variations are possible without departing from the scope of the technical idea of the present invention by anyone having ordinary skill in the art.
10: silicon substrate
20: Photoresist
30: metal layer
40: Nanoimprint mold
110, 210: an n-type nitride semiconductor layer
120, 220: light emitting layer
130, and 230: a p-type nitride semiconductor layer
140, 260: p-type reflection electrode
150: conductive substrate
160, 250: imprint resist layer
170, 270: n-type electrode
180: refractive index control layer
181: first refractive index control layer
182: second refractive index control layer
240: transparent electrode
Claims (21)
Forming a nano-pattern in the form of a columnar groove on the substrate through metal-assisted chemical etching;
Transferring a nano pattern in a columnar groove shape formed on the substrate to a nanoimprint mold by a nanoimprinting method to form a columnar nano pattern inverted in the nano pattern in the nano imprint mold; And
And separating the nanoimprint mold having the column-shaped nano patterns from the substrate.
In the chemical etching using the metal,
Forming a photoresist layer on one side of the substrate;
Forming a nano etch pattern on the photoresist layer through a laser interference lithography method;
Depositing a metal layer on the photoresist layer in which the nano etch pattern is formed; And
And dipping the substrate on which the metal layer is deposited in an etching solution to form a nano-pattern in the form of a columnar groove.
In the laser interference lithography method, the angle of incidence of the laser is in the range of 5 to 45 degrees.
Wherein the period of the nano etching pattern formed by the laser interference lithography method is 250 nm to 1 mu m.
Wherein the metal layer comprises at least one of Au, Pt, Pd and Ag.
Wherein the metal layer is formed using at least one of an electron beam deposition method, a thermal deposition method, and a sputter deposition method.
Wherein the etching solution comprises a mixed solution of distilled water, hydrofluoric acid, and hydrogen peroxide.
Wherein the concentration of the hydrofluoric acid is 3 mol to 5 mol, and the concentration of the hydrogen peroxide is 0.1 mol to 1 mol.
Forming an n-type nitride semiconductor layer, a light emitting layer, and a p-type nitride semiconductor layer on a temporary substrate;
Forming a p-type reflective electrode on the p-type nitride semiconductor layer;
Forming a conductive substrate on the p-type reflective electrode;
Removing the temporary substrate to expose the n-type nitride semiconductor layer;
Forming a nanoimprinted resist layer on the n-type nitride semiconductor layer;
A step of pressing a nano imprint mold having a columnar nano pattern on the nano imprint resist layer to transfer nano patterns in the form of columnar inverted regions to the nano imprint resist layer;
Separating the nanoimprint mold from a nanoimprinted resist layer having a nano pattern formed in a columnar groove shape; And
And forming an n-type electrode by etching a part of the nanoimprinted resist layer having the nano-pattern of the columnar groove shape.
Wherein the nanoimprint mold is fabricated by the method of manufacturing the nanoimprint mold according to claim 1.
And forming a refractive index control layer between the n-type nitride semiconductor layer and the nanoimprinted resist layer, the refractive index control layer having a refractive index smaller than that of the n-type nitride semiconductor layer and higher than that of the nanoimprinted resist layer Of the light emitting diode.
Wherein the refractive index control layer is formed by sequentially laminating a first refractive index control layer and a second refractive index control layer which refract light from the light emitting layer to different refractive indexes.
The first refractive index control layer is formed on the n-type nitride semiconductor layer, the refractive index of the first refractive index control layer is smaller than the refractive index of the n-type nitride semiconductor layer,
Wherein the second refractive index control layer is formed on the first refractive index control layer and the refractive index of the second refractive index control layer is smaller than the refractive index of the first refractive index control layer and greater than the refractive index of the nanoimprinted resist layer. A method of manufacturing a diode.
Said first refractive index adjustment layer is ZnO, Al-doped ZnO, In -doped ZnO, Ga-doped ZnO, ZrO 2, TiO 2, SiO 2, SiO, Al 2 O 3, CuO X and selected from the group consisting of ITO 1 Wherein the light emitting diode includes a plurality of light emitting diodes.
Wherein the second refractive index control layer is a MgO-based oxide.
Wherein the MgO-based oxide constituting the second refractive index-controlling layer is a multi-component compound formed by adding another element to MgO.
Wherein the n-type electrode is formed by etching a part of the nanoimprinted resist layer having the nano pattern of the columnar groove shape to expose the n-type nitride semiconductor layer, and then depositing a conductive material on the etched region. A method of manufacturing a diode.
Forming an n-type nitride semiconductor layer, a light emitting layer, and a p-type nitride semiconductor layer on a substrate on which a pattern for scattering and reflecting incident light is formed;
Exposing a part of the n-type nitride semiconductor layer by mesa etching a part of the p-type nitride semiconductor layer, the light emitting layer and the n-type nitride semiconductor layer;
Forming a transparent electrode on the p-type nitride semiconductor layer;
Forming a nanoimprinted resist layer on the transparent electrode;
A step of pressing a nano imprint mold having a columnar nano pattern on the nano imprint resist layer to transfer nano patterns in the form of columnar inverted regions to the nano imprint resist layer;
Separating the nanoimprint mold from a nanoimprinted resist layer having a nano pattern formed in a columnar groove shape; And
And etching a part of the nanoimprinted resist layer having the nano-pattern of the columnar groove to form a p-type reflective electrode, and forming an n-type electrode on the n-type nitride semiconductor layer.
Wherein the nanoimprint mold is fabricated by the method of manufacturing the nanoimprint mold according to claim 1.
Wherein the transparent electrode is ITO.
Wherein the p-type reflective electrode is formed by etching a part of the nanoimprint resist layer in which the nano pattern of the columnar groove shape is formed to expose the transparent electrode, and then depositing a conductive material on the etched area. Way.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018138624A1 (en) * | 2017-01-30 | 2018-08-02 | International Business Machines Corporation | Nanopatterned biosensor electrode for enhanced sensor signal and sensitivity |
| US10213144B2 (en) | 2016-01-25 | 2019-02-26 | International Business Machines Corporation | Nanopatterned biosensor electrode for enhanced sensor signal and sensitivity |
| US10376193B2 (en) | 2016-07-25 | 2019-08-13 | International Business Machines Corporation | Embedded sacrificial layer to enhance biosensor stability and lifetime for nanopatterned electrodes |
| US10548530B2 (en) | 2017-03-01 | 2020-02-04 | International Business Machines Corporation | Biosensor calibration structure containing different sensing surface area |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20120077209A (en) | 2010-12-30 | 2012-07-10 | 포항공과대학교 산학협력단 | Nano imprint mold manufacturing method, light emitting diode manufacturing method and light emitting diode using the nano imprint mold manufactured by the method |
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| KR20120077209A (en) | 2010-12-30 | 2012-07-10 | 포항공과대학교 산학협력단 | Nano imprint mold manufacturing method, light emitting diode manufacturing method and light emitting diode using the nano imprint mold manufactured by the method |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10213144B2 (en) | 2016-01-25 | 2019-02-26 | International Business Machines Corporation | Nanopatterned biosensor electrode for enhanced sensor signal and sensitivity |
| US11013437B2 (en) | 2016-01-25 | 2021-05-25 | International Business Machines Corporation | Nanopatterned biosensor electrode for enhanced sensor signal and sensitivity |
| US10376193B2 (en) | 2016-07-25 | 2019-08-13 | International Business Machines Corporation | Embedded sacrificial layer to enhance biosensor stability and lifetime for nanopatterned electrodes |
| WO2018138624A1 (en) * | 2017-01-30 | 2018-08-02 | International Business Machines Corporation | Nanopatterned biosensor electrode for enhanced sensor signal and sensitivity |
| US10161898B2 (en) | 2017-01-30 | 2018-12-25 | International Business Machines Corporation | Nanopatterned biosensor electrode for enhanced sensor signal and sensitivity |
| GB2571497A (en) * | 2017-01-30 | 2019-08-28 | Ibm | Nanopatterned biosensor electrode for enhanced sensor signal and sensitivity |
| US10775335B2 (en) | 2017-01-30 | 2020-09-15 | International Business Machines Corporation | Nanopatterned biosensor electrode for enhanced sensor signal and sensitivity |
| GB2571497B (en) * | 2017-01-30 | 2021-05-19 | Ibm | Nanopatterned biosensor electrode for enhanced sensor signal and sensitivity |
| US11022577B2 (en) | 2017-01-30 | 2021-06-01 | International Business Machines Corporation | Nanopatterned biosensor electrode for enhanced sensor signal and sensitivity |
| US10548530B2 (en) | 2017-03-01 | 2020-02-04 | International Business Machines Corporation | Biosensor calibration structure containing different sensing surface area |
| US11045141B2 (en) | 2017-03-01 | 2021-06-29 | International Business Machines Corporation | Biosensor calibration structure containing different sensing surface area |
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