CN102427081A - LED (Light-Emitting Diode) module - Google Patents
LED (Light-Emitting Diode) module Download PDFInfo
- Publication number
- CN102427081A CN102427081A CN2011103802373A CN201110380237A CN102427081A CN 102427081 A CN102427081 A CN 102427081A CN 2011103802373 A CN2011103802373 A CN 2011103802373A CN 201110380237 A CN201110380237 A CN 201110380237A CN 102427081 A CN102427081 A CN 102427081A
- Authority
- CN
- China
- Prior art keywords
- light
- side semiconductor
- semiconductor resistor
- emitting diode
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Fastening Of Light Sources Or Lamp Holders (AREA)
- Led Devices (AREA)
Abstract
The invention relates to an LED (Light-Emitting Diode) module which comprises a light-emitting unit (10) and a base (20) and is characterized in that a containing groove (21) is arranged on the base (20); the light-emitting unit (10) is arranged in the base (20) and comprises a circuit board (12); and a plurality of light-emitting diode chips are connected on the circuit board (12) and are the light-emitting diode chips of an integrated resistor. According to the LED (Light-Emitting Diode) module, as the plurality of light-emitting diode chips are the light-emitting diode chips of the integrated resistor, circuits are simpler without any divider resistance so that the design of the circuit board is more reasonable, the heat dissipation capacity and the manufacturing cost are reduced.
Description
Technical field
The present invention relates to a kind of LED illuminating module structure.
Background technology
LED is directly had the following advantages as lighting: 1, the LED consumed energy reduces 80% with the incandescent lamp of light efficiency; 2, LED does not have poisonous metal mercury, can not pollute environment; 3, LED uses low-tension supply, and supply power voltage is between 6-24V, and is different and different according to product, so it is a safer power supply of ratio use high voltage source, is specially adapted to public place and family and uses.
Though the LED light fixture has numerous advantages, LED directly can produce great amount of heat as illuminating lamp, if the heat that LED gives out can not in time shed, will have influence on the useful life of LED light fixture and the brightness that can have influence on the LED light fixture.
In addition, existing LED illuminating module all needs the rectification circuit of extra setting and external resistor to be used, thereby can increase the complexity of LED illuminating module production cost and circuit connection.Especially the built-in space of LED illuminating module is less, increases extra circuit and utensil and will have influence on radiating effect and useful life.
Summary of the invention
The present invention has designed a kind of LED illuminating module, and it has solved following technical problem:
Be easy to generate great amount of heat when (1) traditional LED illuminating module is used, be difficult for shedding and can have influence on the useful life and the brightness of LED illuminating module.
(2) existing LED illuminating module is used all needs the rectification circuit of extra setting and external resistor to be used, thereby can increase the complexity of LED illuminating module production cost and circuit connection.
In order to solve the technical problem of above-mentioned existence, the present invention has adopted following scheme:
A kind of LED illuminating module; Comprise luminescence unit (10) and base (20); It is characterized in that: on said base (20), be provided with storage tank (21), said luminescence unit (10) is placed in the said base (20), and said luminescence unit (10) comprises a circuit board (12); On said circuit board (12), be connected with a plurality of light-emitting diode chip for backlight unit (11), said a plurality of light-emitting diode chip for backlight unit (11) are the light-emitting diode chip for backlight unit (110) of integrated resistor.
Further; The light-emitting diode chip for backlight unit of said integrated resistor (110) comprises left side semiconductor resistor (R1) and right side semiconductor resistor (R2); Between said left side semiconductor resistor (R1) and said right side semiconductor resistor (R2), be in series with a plurality of light-emitting diodes (L1, L2, L3), limiting layer (4), active area structure (5), P type are distinguished limiting layer (6), P type layer (7), P type ohmic contact layer (8) and P type metal ohmic contact layer (9) and are combined from the bottom to top respectively by independently resilient coating (2), N type layer (3), N type respectively except a shared substrate (1) layer is for said left side semiconductor resistor (R1), said right side semiconductor resistor (R2) and said a plurality of light-emitting diode; Adjacent two light-emitting diodes are connected with P type metal ohmic contact layer (9) electrode through N type layer (3) electrode realizes series connection; Said left side semiconductor resistor (R1) and said right side semiconductor resistor (R2) all are provided with two contact electrodes respectively; A contact electrode of said left side semiconductor resistor (R1) or said right side semiconductor resistor (R2) is connected with the negative or positive electrode of power supply, and the another one contact electrode is connected with the N type layer (3) or the P type metal ohmic contact layer (9) of adjacent light-emitting diode.
Further; The appearance of said left side semiconductor resistor (R1), said right side semiconductor resistor (R2) and a plurality of light-emitting diodes is all wrapped up one deck dielectric insulating film (13), but the dielectric insulating film (13) of two contact electrode tops separately of P type metal ohmic contact layer (9) electrode of N type layer (3) electrode of a plurality of light-emitting diodes, a plurality of light-emitting diodes and said left side semiconductor resistor (R1) and said right side semiconductor resistor (R2) is all removed.
Further, the P type metal ohmic contact layer (9) of said left side semiconductor resistor (R1) is separated into two contact electrodes by the P type metal ohmic contact layer first isolation breach (17); Said right side semiconductor resistor (R2) P type metal ohmic contact layer (9) is isolated breach (18) by P type metal ohmic contact layer second and is separated into two contact electrodes.
Further, said substrate (1) is combined by upper concave hole structure (26) and recessed pore structure (27).
Further, each shrinkage pool diameter of said upper concave hole structure (26) is greater than diameters of each shrinkage pool of said recessed pore structure (27) all.
Further, on said base (20), offer a ventilating opening (23), be connected with said lid (40) through a ventilating frame (30), on said lid (40), offer a plurality of heat radiation slotted holes (41) at said ventilating opening (23).
Further, on said base (20) periphery, offer a plurality of louvres (22).
Further, said base (20) and said lid (40) are metallic copper or aluminium.
This LED illuminating module is compared with traditional LED module, has following beneficial effect:
(1) the present invention is because light-emitting diode chip for backlight unit is the light-emitting diode chip for backlight unit of integrated resistor, and institute need not to use any divider resistance so that circuit is simpler, makes and the design more reasonable of circuit board has reduced heat dissipation capacity and manufacturing cost.
(2) light-emitting diode chip for backlight unit of integrated resistor of the present invention is owing to be with a plurality of light-emitting diodes of a monoblock chip manufacturing; Meet a large amount of light-emitting diode requirements formation of needs matrix structure in the LED illuminating module; Thereby it is can be formulated to a plurality of light-emitting diodes, and simple more and cost is also lower on the manufacture craft according to customer demand.
(3) the present invention has prolonged the useful life of LED illuminating module owing to offering a plurality of heat radiation slotted holes on the lid and on the base periphery, offering a plurality of louvres, can a large amount of heats that light-emitting diode sends in time be derived.
(4) the present invention makes part total reflection light penetrate with the form of scattering owing to substrate is combined by upper concave hole structure and recessed pore structure, perhaps gets into the critical angle ejaculation through repeatedly reflecting, thereby realizes the raising of light extraction efficiency.
Description of drawings
Fig. 1: the exploded view of LED illuminating module of the present invention;
Fig. 2: the stereogram of LED illuminating module of the present invention;
Fig. 3: first kind of structural representation of light-emitting diode chip for backlight unit of integrated resistor in the LED illuminating module of the present invention;
Fig. 4: second kind of structural representation of light-emitting diode chip for backlight unit of integrated resistor in the LED illuminating module of the present invention.
Description of reference numerals:
10-luminescence unit; 11-light-emitting diode; 12-circuit board; 20-base; 21-storage tank; 22-louvre; 23-ventilating opening; 30-ventilating frame; 40-lid; 41-heat radiation slotted hole.
1-substrate; 2-resilient coating; 3-N type layer; 4-N type is limiting layer respectively; 5-active region layer; 6-P type is limiting layer respectively; 7-P type layer; 8-P type ohmic contact layer; 9-P type metal ohmic contact layer; 13-dielectric insulating film; 16-metal alloy layer; 160-input electrode metal level; 161-output electrode metal level; 162-PP junction electrode connects metal level; 163-the first PN junction electrode connects metal level; 164-the second PN junction electrode connects metal level; 165-the three PN junction electrode connects metal level; 17-P type metal ohmic contact layer first is isolated breach; 18-P type metal ohmic contact layer second is isolated breach; R1-left side semiconductor resistor; R2-right side semiconductor resistor; L1-first light-emitting diode; L2-second light-emitting diode; L3-the 3rd light-emitting diode; 26-upper concave hole structure; 27-recessed pore structure.
Embodiment
Below in conjunction with Fig. 1 to Fig. 4, the present invention is further specified:
As shown in Figure 1, a kind of LED illuminating module comprises luminescence unit 10 and base 20; On said base 20, be provided with storage tank 21; Said luminescence unit 10 is placed in the said base 20, and said luminescence unit 1 comprises a circuit board 12, on said circuit board 12, is connected with a plurality of light-emitting diodes 11.On base 20, offer a ventilating opening 23, be connected with lid 40 through a ventilating frame 30, on said lid 4, offer a plurality of heat radiation slotted holes 41 at said ventilating opening 23.On 0 base, 20 peripheries, offer a plurality of louvres 22.The present invention has prolonged the useful life of LED illuminating module owing to offering a plurality of heat radiation slotted holes 41 on the lid 40 and on base 20 peripheries, offering a plurality of louvres 22, can a large amount of heats that light-emitting diode 11 sends in time be derived.
As shown in Figure 2, said a plurality of light-emitting diodes 11 matrix-style on said circuit board 12 is arranged.Base 20 is metallic copper or aluminium with lid 40.
As shown in Figure 3; The light-emitting diode chip for backlight unit 110 of integrated resistor comprises left side semiconductor resistor R1 and right side semiconductor resistor R2; Between left side semiconductor resistor R1 and right side semiconductor resistor R2, be in series with a plurality of light-emitting diode L1, L2, L3, left side semiconductor resistor R1, right side semiconductor resistor R2 and said a plurality of light-emitting diode except 1 layer of a shared substrate respectively by independently resilient coating 2, N type layer 3, N type respectively limiting layer 4, active area structure 5, P type limiting layer 6, P type layer 7, P type ohmic contact layer 8 and P type metal ohmic contact layer 9 combine from the bottom to top respectively; Adjacent two light-emitting diodes are connected with P type metal ohmic contact layer 9 electrodes through N type layer 3 electrode realizes series connection; Left side semiconductor resistor R1 and right side semiconductor resistor R2 are provided with two contact electrodes respectively; The contact electrode of left side semiconductor resistor R1 or right side semiconductor resistor R2 is connected with the negative or positive electrode of power supply, and the another one contact electrode is connected with the N type layer 3 or the P type metal ohmic contact layer 9 of adjacent light-emitting diode.The appearance of left side semiconductor resistor R1, right side semiconductor resistor R2 and a plurality of light-emitting diodes is all wrapped up one deck dielectric insulating film 13, but the dielectric insulating film 13 of two contact electrode tops separately of P type metal ohmic contact layer 9 electrodes of the N type layer electrode of a plurality of light-emitting diodes, a plurality of light-emitting diodes and left side semiconductor resistor R1 and right side semiconductor resistor R2 is all removed.The P type metal ohmic contact layer 9 of left side semiconductor resistor R1 is isolated breach 17 by P type metal ohmic contact layer first and is separated into two contact electrodes; Right side semiconductor resistor R2P type metal ohmic contact layer 9 is isolated breach 18 by P type metal ohmic contact layer second and is separated into two contact electrodes.
Among Fig. 3, light-emitting diode is three: the first light-emitting diode L1, the second light-emitting diode L2 and the 3rd light-emitting diode L3; Wherein, P type metal ohmic contact layer 9 electrodes of the first light-emitting diode L1 connect metal level 162 through the PP junction electrode and are connected with the right side contact electrode of left side semiconductor resistor R1, and N type layer 3 electrode of the first light-emitting diode L1 connect metal level 163 through the first PN junction electrode and are connected with P type metal ohmic contact layer 9 electrodes of the second light-emitting diode L2; N type layer 3 electrode of the second light-emitting diode L2 connect metal level 164 through the second PN junction electrode and are connected with P type metal ohmic contact layer 9 electrodes of the 3rd light-emitting diode L3; N type layer 3 electrode of the 3rd light-emitting diode L3 connect metal level 165 through the 3rd PN junction electrode and are connected with the left side contact electrode of right side semiconductor resistor R2.
The present invention is because the light-emitting diode chip for backlight unit in the LED illuminating module is the light-emitting diode chip for backlight unit of integrated resistor, and institute need not to use any divider resistance so that circuit is simpler, makes and the design more reasonable of circuit board has reduced heat dissipation capacity and manufacturing cost.
As shown in Figure 4, substrate 1 is combined by upper concave hole structure 26 and recessed pore structure 27.Each shrinkage pool diameter of upper concave hole structure 26 is greater than diameters of recessed pore structure 27 each shrinkage pools all.
The present invention makes part total reflection light penetrate with the form of scattering owing to substrate is combined by upper concave hole structure and recessed pore structure, perhaps gets into the critical angle ejaculation through repeatedly reflecting, thereby realizes the raising of light extraction efficiency.Simultaneously also can improve radiating effect.
Combine accompanying drawing that the present invention has been carried out exemplary description above; Obvious realization of the present invention does not receive the restriction of aforesaid way; As long as the various improvement of having adopted method design of the present invention and technical scheme to carry out; Or design of the present invention and technical scheme are directly applied to other occasion without improving, all in protection scope of the present invention.
Claims (9)
1. LED illuminating module; Comprise luminescence unit (10) and base (20); It is characterized in that: on said base (20), be provided with storage tank (21); Said luminescence unit (10) is placed in the said base (20); Said luminescence unit (10) comprises a circuit board (12), on said circuit board (12), is connected with a plurality of light-emitting diode chip for backlight unit (11), it is characterized in that: said a plurality of light-emitting diode chip for backlight unit (11) are the light-emitting diode chip for backlight unit of integrated resistor (110).
2. according to the said LED illuminating module of claim 1; It is characterized in that: the light-emitting diode chip for backlight unit of said integrated resistor (110) comprises left side semiconductor resistor (R1) and right side semiconductor resistor (R2); Between said left side semiconductor resistor (R1) and said right side semiconductor resistor (R2), be in series with a plurality of light-emitting diodes (L1, L2, L3), limiting layer (4), active area structure (5), P type are distinguished limiting layer (6), P type layer (7), P type ohmic contact layer (8) and P type metal ohmic contact layer (9) and are combined from the bottom to top respectively by independently resilient coating (2), N type layer (3), N type respectively except a shared substrate (1) layer is for said left side semiconductor resistor (R1), said right side semiconductor resistor (R2) and said a plurality of light-emitting diode; Adjacent two light-emitting diodes are connected with P type metal ohmic contact layer (9) electrode through N type layer (3) electrode realizes series connection; Said left side semiconductor resistor (R1) and said right side semiconductor resistor (R2) all are provided with two contact electrodes respectively; A contact electrode of said left side semiconductor resistor (R1) or said right side semiconductor resistor (R2) is connected with the negative or positive electrode of power supply, and the another one contact electrode is connected with the N type layer (3) or the P type metal ohmic contact layer (9) of adjacent light-emitting diode.
3. according to the said LED illuminating module of claim 2; It is characterized in that: the appearance of said left side semiconductor resistor (R1), said right side semiconductor resistor (R2) and a plurality of light-emitting diodes is all wrapped up one deck dielectric insulating film (13), but the dielectric insulating film (13) of two contact electrode tops separately of P type metal ohmic contact layer (9) electrode of N type layer (3) electrode of a plurality of light-emitting diodes, a plurality of light-emitting diodes and said left side semiconductor resistor (R1) and said right side semiconductor resistor (R2) is all removed.
4. according to claim 2 or 3 said LED illuminating module, it is characterized in that: the P type metal ohmic contact layer (9) of said left side semiconductor resistor (R1) is isolated breach (17) by P type metal ohmic contact layer first and is separated into two contact electrodes; Said right side semiconductor resistor (R2) P type metal ohmic contact layer (9) is isolated breach (18) by P type metal ohmic contact layer second and is separated into two contact electrodes.
5. according to any one said LED illuminating module in the claim 1 to 4, it is characterized in that: said substrate (1) is combined by upper concave hole structure (26) and recessed pore structure (27).
6. according to the said LED illuminating module of claim 5, it is characterized in that: each shrinkage pool diameter of said upper concave hole structure (26) is greater than diameters of each shrinkage pool of said recessed pore structure (27) all.
7. according to any one said LED illuminating module in the claim 1 to 6; It is characterized in that: on said base (20), offer a ventilating opening (23); Be connected with said lid (40) through a ventilating frame (30) at said ventilating opening (23), on said lid (40), offer a plurality of heat radiation slotted holes (41).
8. according to the said LED illuminating module of claim 7, it is characterized in that: on said base (20) periphery, offer a plurality of louvres (22).
9. said according to Claim 8 LED illuminating module is characterized in that: said base (20) and said lid (40) are metallic copper or aluminium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103802373A CN102427081A (en) | 2011-11-25 | 2011-11-25 | LED (Light-Emitting Diode) module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103802373A CN102427081A (en) | 2011-11-25 | 2011-11-25 | LED (Light-Emitting Diode) module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102427081A true CN102427081A (en) | 2012-04-25 |
Family
ID=45961044
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011103802373A Pending CN102427081A (en) | 2011-11-25 | 2011-11-25 | LED (Light-Emitting Diode) module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102427081A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101072464A (en) * | 2006-10-06 | 2007-11-14 | 范朝阳 | Ac-dc light-emitting diode having integrated protection function |
| CN201748183U (en) * | 2010-05-07 | 2011-02-16 | 成都普兰斯纳科技有限公司 | LED lighting module |
| CN102097564A (en) * | 2010-11-26 | 2011-06-15 | 华中科技大学 | Quantum dot molecular light emitting device |
| CN102157654A (en) * | 2011-03-30 | 2011-08-17 | 重庆大学 | Inverted mounting LED chip based on double-faced shrinkage pool substrate and component gradual change buffer layer |
-
2011
- 2011-11-25 CN CN2011103802373A patent/CN102427081A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101072464A (en) * | 2006-10-06 | 2007-11-14 | 范朝阳 | Ac-dc light-emitting diode having integrated protection function |
| CN201748183U (en) * | 2010-05-07 | 2011-02-16 | 成都普兰斯纳科技有限公司 | LED lighting module |
| CN102097564A (en) * | 2010-11-26 | 2011-06-15 | 华中科技大学 | Quantum dot molecular light emitting device |
| CN102157654A (en) * | 2011-03-30 | 2011-08-17 | 重庆大学 | Inverted mounting LED chip based on double-faced shrinkage pool substrate and component gradual change buffer layer |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10627098B2 (en) | LED filament and LED light bulb having the same | |
| CN203277485U (en) | Light-emitting device, light-emitting diode chip for forming multi-directional light emission and sapphire substrate thereof | |
| US9874318B2 (en) | LED assembly and LED bulb using the same | |
| CN103199173A (en) | Light emitting diode chip, packaging substrate, packaging structure and manufacturing method thereof | |
| CN113921688A (en) | Novel colorful LED light source | |
| CN202839604U (en) | Light-emitting diode device | |
| CN203082797U (en) | Mirror surface aluminium substrate of light-emitting diode (LED) light source | |
| CN203322806U (en) | LED (light-emitting diode) light source module capable of linear light emitting | |
| CN102427081A (en) | LED (Light-Emitting Diode) module | |
| CN203068198U (en) | Integrated light-emitting diode (LED) lamp structure | |
| US20110121340A1 (en) | Light emitting device package | |
| CN103594594B (en) | There is the inverted light-emitting diode (LED) of roughening transparency electrode | |
| CN203150540U (en) | Light emitting diode packaging structure | |
| CN202633304U (en) | Distributed high-voltage LED die set | |
| CN203010551U (en) | Light emitting diode (LED) aluminum substrate | |
| CN102760817B (en) | Light-emitting diode encapsulation structure | |
| CN201715409U (en) | Built-in soft light led fluorescent lamp | |
| CN201606765U (en) | LED lamp for decorating walls | |
| CN2926814Y (en) | LED illuminating light | |
| CN2916931Y (en) | Compact high-power LED encapsulation structure | |
| CN201116698Y (en) | LED device | |
| CN103594569B (en) | There is the manufacture method of the inverted light-emitting diode (LED) of alligatoring transparency electrode | |
| CN213340419U (en) | Five-color LED (light-emitting diode) paster lamp bead | |
| CN201877427U (en) | Integrated high-power LED (light-emitting diode) | |
| CN102201526A (en) | Heat radiation support with integrated packaging |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120425 |