CN2916931Y - Compact high-power LED encapsulation structure - Google Patents
Compact high-power LED encapsulation structure Download PDFInfo
- Publication number
- CN2916931Y CN2916931Y CNU2006200741527U CN200620074152U CN2916931Y CN 2916931 Y CN2916931 Y CN 2916931Y CN U2006200741527 U CNU2006200741527 U CN U2006200741527U CN 200620074152 U CN200620074152 U CN 200620074152U CN 2916931 Y CN2916931 Y CN 2916931Y
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- CN
- China
- Prior art keywords
- power led
- main body
- led chip
- reflection cavity
- matrix reflection
- Prior art date
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- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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Abstract
An encapsulation structure for compact high power LED, which comprises a lens body, a metallic lead wire, a plurality of high power LED chip, a concave reflector cavity and a main body basal board. The concave reflector cavity is positioned at the upper rear section of the main body basal board and the two keep even at the bottom; the high power LED chip is adhered to the central part of the concave reflector cavity; each high power LED chip is connected to the cathode and anode poles in the electrode connecting layer via the metallic lead wire; the lens body covers on the concave reflector cavity and all the metallic lead wires and high power LED chips; a reflection layer is plated on the internal surface of the concave reflector cavity, so as to greatly improve the viewing efficiency of the high power LED chip. The concave reflector cavity and main body basal board, which are made of metallic materials with excellent heat conductivity, greatly improve the heat dispersion performance of the LED chip and endow the utility model with simple structure and low manufacturing cost.
Description
Technical field:
The utility model belongs to light emitting semiconductor device, relates in particular to the large-power light-emitting diodes luminescent device.
Background technology:
With large-power light-emitting diodes (hereinafter to be referred as LED) device is the semiconductor lighting of core, has advantages such as volume is little, all solid state, long-life, environmental protection, power saving, obtains using comparatively widely at floor light and special lighting field.Yet to really enter domestic lighting market, except will reducing cost, also need to strengthen research and development, increase the power of single luminescent device, improve luminous efficiency high-power LED chip.The researcher has clearly realized that the great power LED device is the core component of following illumination, researchs and develops the structure and the processing procedure of large-power LED chip so each major company of the world drops into very big strength at present.Along with improving constantly of LED input power, also have higher requirement for the encapsulation of power-type LED chip.The encapsulation technology of high-power LED chip should satisfy following 2 requirements: the one, and encapsulating structure will have the high optical efficiency of getting, and it two is that thermal resistance is low as far as possible, and heat dispersion is good.Otherwise, if the high heat in high-power LED chip surface can not be dispersed in the surrounding air in time, will directly cause the deterioration of chip and encapsulating material, quicken light decay until inefficacy.Therefore, get the optical efficiency height, low thermal resistance, the good novel package structure of heat radiation are the key technology and the difficult point place of large-power LED development.
Summary of the invention:
Goal of the invention of the present utility model provides a kind of encapsulating structure of compact type large power light emitting diode, this structure helps to improve the optical efficiency of getting of high-power LED chip, raising is to the heat dispersion of high-power LED chip, be convenient to the installation and the application of secondary heat dissipation design and follow-up light fixture, it is simple in structure, low cost of manufacture.
A kind of encapsulating structure of compact type large power light emitting diode, it comprises lenticular body, metal lead wire, several high-power LED chips, matrix reflection cavity, main body substrate, upper surface at main body substrate is covered with insulating barrier, on insulating barrier, be provided with connection electrode layer, on main body substrate, be provided with installing hole, the matrix reflection cavity is fixedly mounted in this installing hole with mosaic mode, and after the matrix reflection cavity was installed on the main body substrate, both baseplanes were in the same plane; Extend the positive and negative electrode contact from connection electrode layer, high-power LED chip is bonded in matrix reflection cavity centre, each high-power LED chip is linked to each other with the positive and negative electrode point of connection electrode layer respectively by metal lead wire, the lenticular body sealing cover is on the matrix reflection cavity, and all metal lead wire and the high-power LED chips of cover cap.
The material of described matrix reflection cavity and main body substrate is the high metal material of conductive coefficient, is coated with the reflector at the surface of internal cavity of matrix reflection cavity.
The metal material that described conductive coefficient is high is any in aluminium, copper, iron and the alloy thereof, and described reflector is silver coating or chromium coating.
Described main body substrate is aluminum-base printed circuit board or copper base printed circuit board or iron-based printed circuit board.
The cross sectional shape of described lenticular body is near hemisphere, and its material is acryl PMMA.
Inner surface at the matrix reflection cavity is coated with the optical efficiency of getting that the reflector helps to improve high-power LED chip; Matrix reflection cavity and main body substrate select for use high heat conductive metal material to improve the heat dispersion of high-power LED chip, are convenient to the installation and the application of secondary heat dissipation design and follow-up light fixture, and it is simple in structure, low cost of manufacture.Also can implement the combination of multicore sheet as required,, make things convenient for the secondary heat radiation of lamp light source and the installation of light fixture to satisfy more high-power LED encapsulation.
Description of drawings:
Fig. 1 is a kind of structural representation of the present utility model (a single-chip type);
Fig. 2 is an another kind of structural representation of the present utility model (how chip-shaped).The 1-lenticular body; The 2-metal lead wire; The 3-high-power LED chip; 4-matrix reflection chamber; The 5-main body substrate; The 6-insulating barrier; The 7-connection electrode layer; 71-positive electrode contact; 72-negative electrode contact;
Embodiment:
Embodiment one: the encapsulating structure that is illustrated in figure 1 as the compact type large power light emitting diode of single-chip type; this structure comprises: lenticular body 1; metal lead wire 2; a high-power LED chip 3; matrix reflection chamber 4; main body substrate 5; on main body substrate 5, have installing hole; matrix reflection chamber 4 is fixedly mounted in this installing hole with mosaic mode; be matched in clearance closely between the two; after press-fiting; the bottom surface of matrix reflection chamber 4 and main body substrate 5 is all in the same plane; high-power LED chip 3 is bonded in the center of matrix reflection chamber 4 by the bonding agent of high thermal conductivity coefficient; each high-power LED chip 3 is linked to each other with connection electrode layer 7 respectively by metal lead wire 2; extend positive and negative electrode contact 71 from connection electrode layer; 72; in matrix reflection chamber 4, fill with silica gel; with protection chip 3 and metal lead wire 2; lenticular body 1 is sleeved on outside high-power LED chip 3 and metal lead wire 2 covers, and covers high-power LED chip 3 and metal lead wire 2.
Embodiment two: as shown in Figure 2, the encapsulating structure of described compact type large power light emitting diode is for how chip-shaped, this structure is identical with example one, just be provided with three high-power LED chips 3, and each high-power LED chip 3 is connected by metal lead wire 2 all with conducting electricity between the articulamentum 7 in the middle part of matrix reflection chamber 4.
Embodiment two can satisfy more high-power LED encapsulation, also can utilize promptly red, green, the blue look high-power LED chip 3 of R, G, B to produce white light.
Claims (5)
1, a kind of encapsulating structure of compact type large power light emitting diode, it is characterized in that: it comprises lenticular body (1), metal lead wire (2), several high-power LED chips (3), matrix reflection cavity (4), main body substrate (5), upper surface at main body substrate (5) is covered with insulating barrier (6), on insulating barrier (6), be provided with connection electrode layer (7), on main body substrate (5), be provided with the hole that matrix reflection cavity (4) is installed, matrix reflection cavity (4) is fixedly mounted in this hole, after matrix reflection cavity (4) was installed on the main body substrate (5), both baseplanes were in the same plane; High-power LED chip (3) is bonded in matrix reflection cavity (4) centre, each high-power LED chip (3) links to each other with connection electrode layer (7) by metal lead wire (2), lenticular body (1) sealing cover is on matrix reflection cavity (4), and all metal lead wire (2) and the high-power LED chips (3) of cover cap.
2, according to the encapsulating structure of claims 1 described compact type large power light emitting diode, it is characterized in that: the material of described matrix reflection cavity (4) and main body substrate (5) is the high metal material of conductive coefficient, is coated with the reflector at the surface of internal cavity of matrix reflection cavity (4).
3, according to the encapsulating structure of claims 2 described compact type large power light emitting diodes, it is characterized in that: the metal material that described conductive coefficient is high is any in aluminium, copper, iron and the alloy thereof, and described reflector is silver coating or chromium coating.
4, according to the encapsulating structure of claims 1 described compact type large power light emitting diode, it is characterized in that: described main body substrate (5) is aluminum-base printed circuit board or copper base printed circuit board or iron-based printed circuit board.
5, according to the encapsulating structure of claims 1 described compact type large power light emitting diode, it is characterized in that: the cross sectional shape of described lenticular body (1) is that its material is acryl PMMA near hemisphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2006200741527U CN2916931Y (en) | 2006-06-20 | 2006-06-20 | Compact high-power LED encapsulation structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2006200741527U CN2916931Y (en) | 2006-06-20 | 2006-06-20 | Compact high-power LED encapsulation structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2916931Y true CN2916931Y (en) | 2007-06-27 |
Family
ID=38187844
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2006200741527U Expired - Fee Related CN2916931Y (en) | 2006-06-20 | 2006-06-20 | Compact high-power LED encapsulation structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2916931Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101158464B (en) * | 2007-10-19 | 2010-06-09 | 友达光电股份有限公司 | Back light device and back light module unit therefrom |
| CN102537780A (en) * | 2010-12-07 | 2012-07-04 | Lg伊诺特有限公司 | Light emitting device module and backlight unit including the same |
-
2006
- 2006-06-20 CN CNU2006200741527U patent/CN2916931Y/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101158464B (en) * | 2007-10-19 | 2010-06-09 | 友达光电股份有限公司 | Back light device and back light module unit therefrom |
| CN102537780A (en) * | 2010-12-07 | 2012-07-04 | Lg伊诺特有限公司 | Light emitting device module and backlight unit including the same |
| CN102537780B (en) * | 2010-12-07 | 2016-12-07 | Lg伊诺特有限公司 | Light emitting device module and the back light unit including light emitting device module |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070627 Termination date: 20100620 |