CN2645244Y - High power light-emitting diode (LED) device - Google Patents
High power light-emitting diode (LED) device Download PDFInfo
- Publication number
- CN2645244Y CN2645244Y CNU032790481U CN03279048U CN2645244Y CN 2645244 Y CN2645244 Y CN 2645244Y CN U032790481 U CNU032790481 U CN U032790481U CN 03279048 U CN03279048 U CN 03279048U CN 2645244 Y CN2645244 Y CN 2645244Y
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- CN
- China
- Prior art keywords
- passivation layer
- led
- silica gel
- aluminium base
- power light
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Abstract
The utility model aims to provide a high-power LED device, which is provided with highly integrated structure, excellent heat dissipation performance, prolonged service life and high mechanical strength. The utility model comprises an aluminum substrate on the face of which the concave chamber is positioned; an insulation passivation layer is covered on the face of the aluminum substrate except the concave chamber; a plurality of metal coating electrode regions are arranged on the insulation passivation layer, the electrode regions are separated by the insulation passivation layer; an light-emitting chip is arranged at the bottom of the concave chamber; the transparent silica gel is filled in the concave chamber and packages the light-emitting chip; the epoxy resin covers on the electrode region, the insulation passivation layer and the transparent silica gel.
Description
Invention field
The utility model relates to luminescent device, particularly a kind of large-power light-emitting diodes (LED) device that adopts the aluminium base structure.
Background technology
Recently, along with the further expansion of illumination range of application, increasing light engineering adopts coloury LED as interspersing light source.LED is because its long working life, the power and energy saving, and operating voltage is low, so be a kind of extraordinary light source.But there is the shortcoming that power is little, brightness is low in traditional LED, is difficult to competent some application scenario.For this reason, select for use the great power LED device just to become inevitable choice, but this great power LED device is the same with general power device, needs to solve the problem of heat radiation.In addition, the LED device often is applied to outdoor environment, and seal, integration and the mechanical strength etc. of device are all had higher requirement.
Summary of the invention
The purpose of this utility model provides a kind of large-power light-emitting diodes (LED) device, and it has the structure of Highgrade integration, and heat dispersion is outstanding, and prolong and the mechanical strength height useful life.
Goal of the invention of the present utility model is achieved through the following technical solutions:
A kind of large-power light-emitting diodes (LED) device comprises:
Aluminium base, recessed cavity is offered in its front;
Be covered in the positive insulating passivation layer that removes recessed cavity with exterior domain of described aluminium base;
Be positioned at the number of metal coating electrode district on the described insulating passivation layer, be insulated passivation layer between the described electrode district and separate;
Be positioned at the luminescence chip of described recessed cavity bottom;
Be filled in the described recessed cavity and wrap the transparent silica gel of described luminescence chip; And
Cover the epoxy resin on described electrode district, insulating passivation layer and the transparent silica gel.
Reasonablely be in above-mentioned large-power light-emitting diodes (LED) device, further to comprise the pin that welds together with described electrode district and covered by described epoxy resin.
Reasonable is in above-mentioned large-power light-emitting diodes (LED) device, further to comprise the fin that is fixed on the described aluminium base back side.
In above-mentioned high power LED device, the aluminium base structure of employing helps heat and distributes from the device back side, so radiating effect is better.Simplified manufacturing process on the aluminium base greatly and reflection cavity directly is made in.In addition,, therefore luminescence chip and epoxy resin are separated the useful life that has prolonged device, improved the quality of device with transparent silica gel because the resistance to elevated temperatures of transparent silica gel is better than epoxy resin.
Description of drawings
Fig. 1 is the generalized section according to high power LED device of the present utility model.
Embodiment
Below by Fig. 1 the preferred embodiment of this practicality is described.
As shown in Figure 1, large-power light-emitting diodes of the present utility model (LED) device comprises aluminium base 1, insulating passivation layer 2, electrode district 3, luminescence chip 4, transparent silica gel 5 and epoxy resin 6.
Offer a ganoid recessed cavity 1a as reflection cavity in the front of aluminium base 1, luminescence chip 4 is installed in the bottom of this recessed cavity 1a and is electrically connected with housing surface.The light of luminescence chip 4 is except the direct outgoing of a part, and to light also outwards ejaculation after this cavity reflection of other direction emission, therefore the light that chip 4 is sent is more concentrated, and brightness also increases.Because this recessed cavity 1a directly is opened on the aluminium base 1, therefore simplified manufacturing process greatly.In order to improve radiating effect, at the back side of aluminium base 1 heatsink-mountable power.
Consider that aluminium base 1 conducts electricity,, at first cover one deck insulating passivation layer 2, for example Al in aluminium base 1 positive zone except that recessed cavity 1a in order to form the electrode that operating voltage is provided to luminescence chip 4 thereon
2O
3, coated electrode district 3 on insulating passivation layer 2 then.The generation type of electrode district 3 is, at first be easy to attached to the metal on the insulating passivation layer 2 (for example gold) at plating one deck on the insulating passivation layer 2, then adopt photoetching process that this layer metal level is divided into and be insulated two parts that passivation layer 2 is isolated each other, can on passivation layer 2, form two parts metal level insulated from each other thus to constitute two electrode districts 3 of luminescence chip 4.
Luminescence chip 4 generally all adopts epoxy resin to encapsulate.But when the power of luminescence chip 4 is big, because the heat-conducting effect and the resistance to elevated temperatures of epoxy resin are relatively poor, so the heat that luminescence chip 4 produces will make the epoxy resin flavescence, influence the quality and the life-span of device.In order addressing the above problem, in the utility model, to adopt transparent silica gel 5 that luminescence chip 4 is wrapped, and then on electrode district 3, insulating passivation layer 2 and transparent silica gel 5, cover one deck epoxy resin 6.Because transparent silica gel has the resistance to elevated temperatures that is better than epoxy resin, therefore improved the quality of device, prolonged its useful life.
The both sides in aluminium base 1 front are formed with platform 1b and the 1b ' that is lower than middle section, and chamfered transition is passed through on the surface of they and aluminium base front middle section.Device pin 7a and 7b are welded in the electrode district 3 of platform, therefore make device pin 7a and 7b and aluminium base 1 combine together, and more reliable electricity contact is provided.Pin 7 is all covered by epoxy resin 6 with electrode district 3, passivation layer 2 and transparent silica gel 5.
Claims (3)
1. a large-power light-emitting diodes (LED) device is characterized in that, comprises:
Aluminium base, recessed cavity is offered in its front;
Be covered in the positive insulating passivation layer that removes recessed cavity with exterior domain of described aluminium base;
Be positioned at the number of metal coating electrode district on the described insulating passivation layer, be insulated passivation layer between the described electrode district and separate;
Be positioned at the luminescence chip of described recessed cavity bottom;
Be filled in the described recessed cavity and wrap the transparent silica gel of described luminescence chip; And
Cover the epoxy resin on described electrode district, insulating passivation layer and the transparent silica gel.
2. large-power light-emitting diodes as claimed in claim 1 (LED) device is characterized in that, further comprises the pin that welds together with described electrode district and covered by described epoxy resin.
3. large-power light-emitting diodes as claimed in claim 1 or 2 (LED) device is characterized in that, further comprises the fin that is fixed on the described aluminium base back side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU032790481U CN2645244Y (en) | 2003-09-29 | 2003-09-29 | High power light-emitting diode (LED) device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU032790481U CN2645244Y (en) | 2003-09-29 | 2003-09-29 | High power light-emitting diode (LED) device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2645244Y true CN2645244Y (en) | 2004-09-29 |
Family
ID=34303388
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU032790481U Expired - Fee Related CN2645244Y (en) | 2003-09-29 | 2003-09-29 | High power light-emitting diode (LED) device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2645244Y (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100382344C (en) * | 2004-12-31 | 2008-04-16 | 财团法人工业技术研究院 | Light-emitting diode packaging structure and method for making same |
| CN100384584C (en) * | 2004-12-20 | 2008-04-30 | 洪明山 | Method for fabricating structure of heat elimination of light emitting diode, |
| WO2009006791A1 (en) * | 2007-07-09 | 2009-01-15 | Shanghai William's Lighting Co., Ltd. | Light emitting diode and method for fabricating thereof |
| CN100539219C (en) * | 2005-04-28 | 2009-09-09 | 皇家飞利浦电子股份有限公司 | Comprise the light source that is arranged on the LED in the recess |
| CN101488546B (en) * | 2007-10-31 | 2012-05-23 | 夏普株式会社 | Chip-type led and method for manufacturing the same |
| CN101965647B (en) * | 2008-01-11 | 2012-05-30 | Lg伊诺特有限公司 | Light emitting element |
| CN103022330A (en) * | 2005-02-28 | 2013-04-03 | 奥斯兰姆奥普托半导体有限责任公司 | Illumination device |
| CN106206916A (en) * | 2016-08-31 | 2016-12-07 | 开发晶照明（厦门）有限公司 | LED metal basal board and LED module |
-
2003
- 2003-09-29 CN CNU032790481U patent/CN2645244Y/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100384584C (en) * | 2004-12-20 | 2008-04-30 | 洪明山 | Method for fabricating structure of heat elimination of light emitting diode, |
| CN100382344C (en) * | 2004-12-31 | 2008-04-16 | 财团法人工业技术研究院 | Light-emitting diode packaging structure and method for making same |
| CN103022330A (en) * | 2005-02-28 | 2013-04-03 | 奥斯兰姆奥普托半导体有限责任公司 | Illumination device |
| CN100539219C (en) * | 2005-04-28 | 2009-09-09 | 皇家飞利浦电子股份有限公司 | Comprise the light source that is arranged on the LED in the recess |
| WO2009006791A1 (en) * | 2007-07-09 | 2009-01-15 | Shanghai William's Lighting Co., Ltd. | Light emitting diode and method for fabricating thereof |
| CN101345273B (en) * | 2007-07-09 | 2011-03-23 | 上海威廉照明电气有限公司 | Luminous diode and its producing method |
| CN101488546B (en) * | 2007-10-31 | 2012-05-23 | 夏普株式会社 | Chip-type led and method for manufacturing the same |
| CN101965647B (en) * | 2008-01-11 | 2012-05-30 | Lg伊诺特有限公司 | Light emitting element |
| CN106206916A (en) * | 2016-08-31 | 2016-12-07 | 开发晶照明（厦门）有限公司 | LED metal basal board and LED module |
| CN106206916B (en) * | 2016-08-31 | 2019-02-15 | 开发晶照明（厦门）有限公司 | LED metal substrate and LED module |
| US10418536B2 (en) | 2016-08-31 | 2019-09-17 | Kaistar Lighting (Xiamen) Co., Ltd. | LED metal substrate and LED module |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20040929 Termination date: 20120929 |