CN201804907U - High-power LED - Google Patents
High-power LED Download PDFInfo
- Publication number
- CN201804907U CN201804907U CN2010202122509U CN201020212250U CN201804907U CN 201804907 U CN201804907 U CN 201804907U CN 2010202122509 U CN2010202122509 U CN 2010202122509U CN 201020212250 U CN201020212250 U CN 201020212250U CN 201804907 U CN201804907 U CN 201804907U
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- Prior art keywords
- led
- metal interconnection
- interconnection layer
- power led
- great power
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Led Devices (AREA)
Abstract
The utility model discloses a high-power LED comprising a silicon baseplate, LED chips and a transparent adhesive tape layer, wherein, the upper surface of the silicon baseplate is plated with a metal interconnection layer for leading out the electrodes of the LED chips, the upper surface of the metal interconnection layer is plated with a nano silver layer, the LED chips are fixed on the metal interconnection layer plated with the nano silver layer, and the space above the silicon baseplate and the LED chips is covered with the transparent adhesive tape layer. Since the silicon baseplate adopted in the high-power LED excels at thermal conductivity, the heat dissipation performance of the high-power LED is greatly improved, junction temperature is reduced effectively, and light attenuation is reduced. Moreover, the nano silver film plating the metal interconnection layer significantly improves the light emitting efficiency of the high-power LED, prevents the surface of the silver layer from turning yellow or black, and improves the reliability of the high-power LED.
Description
Technical field
The utility model relates to LED field (light-emitting diode), relates in particular to a kind of great power LED.
Background technology
At present, the most of substrate that adopts high heat-conducting of great power LED, how with low-temperature co-fired ceramic substrate (LTCC) as the crystal grain heat-radiating substrate, its conductive coefficient (TC) is generally at 3w/m.k～4w/m.k, linear expansion coefficient (CTE) is at 4.5ppm/～7ppm/k, outward appearance is white in color, and has certain capacity of heat transmission.
As shown in Figure 1, led chip 3 is fixed on the upper surface of ceramic substrate 1 by high heat conduction elargol, its both positive and negative polarity uses gold thread 5 to be connected to the metal interconnection layer of substrate 1 upper surface, and this metal interconnection layer comprises first silver layer 21, nickel dam 22 and second silver layer 23 that is coated in substrate 1 upper surface successively.Wherein, first silver layer 21 is by connecting the silver-colored through hole 11 of its upper and lower surface on the substrate 1, and with electrode 4 conductings of substrate 1 below, nickel dam 22 is used to isolate two silver layers, and second silver layer 23 is used to strengthen the light reflection.Substrate 1 below also is provided with the heat sink pad 6 that is used for the LED heat radiation, and the heat of led chip 2 luminous generations conducts to heat sink pad 6 by the through hole on the substrate 1.Also cover fluorescent glue thin layer 8 on the led chip 2 and be used for synthesize white light, the upper surface of substrate 1 also covers the layer of silica gel 7 of dome shape.
This LED packaged type is generally used in the LED that power is 1W, for example, OSRAM company produce with thick film or low-temperature co-fired ceramic substrate a kind of LED as the crystal grain heat-radiating substrate, the minimum value of thermal resistance is about 6.5 ℃/W.Yet for high-power LED more, the thermal resistance of ceramic substrate is bigger, and radiating effect is not good, and LED is being lighted in the process for a long time, and the led chip junction temperature is higher, and light decay is very big, influences the working life of LED.
The utility model content
The main technical problems to be solved in the utility model is a kind of perfect heat-dissipating to be provided, and to improve the great power LED of light efficiency.
For solving the problems of the technologies described above, the utility model provides a kind of great power LED, comprise silicon substrate, led chip and substratum transparent, the upper surface plating of described silicon substrate is used to draw the metal interconnection layer of described led chip electrode, the upper surface plating nanometer silverskin of described metal interconnection layer; Described led chip is fixed on the metal interconnection layer of described plating nanometer silverskin, and described substratum transparent covers the top of described silicon substrate and led chip.
In a kind of execution mode, described metal interconnection layer comprises nickel dam and the silver layer that is plated on described silicon substrate upper surface successively.
In the another kind of execution mode, described metal interconnection layer comprises copper layer and the silver layer that is plated on described silicon substrate upper surface successively.
Preferably, described led chip eutectic is welded on the described metal interconnection layer.
Preferably, described metal interconnection layer comprises two parts of the positive and negative electrode of drawing led chip respectively, adopts the separator of insulation to separate between described two parts metal interconnection layer.
Further, described separator is the constant yellowish-white glue-line that is filled between described two parts metal interconnection layer.
For white light LEDs, the upper surface of described led chip covers the fluorescent material thin layer.
Further, have on the described silicon substrate and adopt the silver slurry to connect the silver-colored through hole of its upper and lower surface, the lower surface of described silicon substrate also is provided with corresponding with the position of described silver-colored through hole heat sink.
In a kind of great power LED, the quantity of described led chip is a plurality of, described a plurality of led chip serial or parallel connections.
According to concrete needs, the upper surface of described substratum transparent is the sphere or the plane of projection.
The beneficial effects of the utility model are: LED of the present utility model adopts the good silicon substrate of thermal conductivity, so heat dispersion significantly improves, and can effectively reduce junction temperature, reduces light decay; Plating nanometer silverskin on metal interconnection layer has simultaneously significantly improved the light extraction efficiency of LED.
The utility model LED fills constant yellowish-white glue-line between two parts metal interconnection layer, significantly strengthened the light reflecting effect, has improved light efficiency, has prevented silver layer surface jaundice blackout etc., has improved the reliability of LED.
The utility model LED comprises a plurality of led chips each other in series or parallel, has further improved brightness, is applicable to multiple LED illuminating devices such as street lamp, searchlight, ceiling light, wall lamp.
Description of drawings
Fig. 1 is a kind of existing LED cutaway view;
Fig. 2 is the cutaway view of the great power LED of first kind of embodiment of the utility model;
Fig. 3 is the cutaway view of the great power LED of second kind of embodiment of the utility model;
Fig. 4 is the cutaway view of the great power LED of the third embodiment of the utility model;
Fig. 5 is the cutaway view of the great power LED of the 4th kind of embodiment of the utility model.
Embodiment
In conjunction with the accompanying drawings the utility model is described in further detail below by embodiment.
Embodiment one:
As shown in Figure 2, the LED of present embodiment comprises substrate 1, led chip 3 and covers substrate 1 and the substratum transparent 7 of led chip 3 tops.The upper surface metal lining interconnection layer of substrate 1, the upper surface of metal interconnection layer is plating nanometer silverskin also, and led chip 3 is fixed on the metal interconnection layer of plating nanometer silverskin, and links to each other with metal interconnection layer by two gold threads 5.The metal interconnection layer utilization connects substrate 1 upper and lower surface and irritates the silver-colored through hole 11 that argent is arranged, and the electrode of drawing led chip 3 is to the electrode pin 4 that is arranged on substrate 1 below.
In the present embodiment, the material of substrate 1 adopts silicon.After deliberation, the conductive coefficient of silicon (TC) is about 163w/m.k, and linear expansion coefficient (CTE) is about 4.2ppm/k, and near the coefficient of expansion of LED blue chip, and outward appearance is black, and blackness takes over 1, has characteristics such as high heat conduction, high radiation, high reliability.Because conductive coefficient near AlN, greater than SiC, adds the black body radiation function, under situation about consuming with constant power, the capacity of heat transmission of silicon is far longer than ceramic material, according to measurement, after adopting silicon substrate, the heat dispersion of LED significantly improves, and thermal resistance is lower than 3 ℃/W, compares the overall dimension of LED with ceramic substrate and can dwindle 60%～70%, be particularly suitable for the LED of power greater than 1W, can obviously reduce junction temperature, thereby reduce light decay, prolong its working life.
In addition, silicon content on earth occupies the second, takes up an area of about 25% of shell component, so aboundresources, can reduce the LED cost.
Present embodiment LED is at the upper surface plating nanometer silverskin of metal interconnection layer, and on the one hand, the nanometer silverskin can significantly strengthen the light reflecting effect, improves the light extraction efficiency of LED; On the other hand, compare with the surface that ceramic substrate is coarse, the surface of metal interconnection layer is very smooth behind the plating nanometer silverskin, is convenient to the mode of led chip 3 by the eutectic weldering is fixed on the substrate 1, realizes COB (CHIP ON BOARD: the chip on board encapsulation) encapsulation.In addition, functions such as well anti-oxidant, anti-sulfuration that the nanometer silverskin has, anti-steam have prevented silver layer surface jaundice blackout etc., have improved the reliability of LED.Compare with gold-plated mode, present embodiment can also reduce material cost.
Metal interconnection layer can for example comprise the nickel dam 24 and the silver layer 25 that are plated on substrate 1 upper surface successively according to concrete needs setting, perhaps also can comprise the copper layer and the silver layer 25 that are plated on substrate 1 upper surface successively.Silver layer 25 is used to strengthen the light reflection, and nickel dam 24 or copper layer are used to isolate the substrate 1 of black, avoid extinction.
Metal interconnection layer comprises two parts of the positive and negative electrode of drawing led chip 3 respectively, adopts the separator of insulation to separate between two parts metal interconnection layer.Separator can adopt substratum transparent or white glue-line, preferably, black substrate 1 extinction for fear of this position, separator adopts the not xanthochromia white adhesive layer 9 that is filled between two parts metal interconnection layer, more than high temperature resistant 200 degree, have stronger reflection action, can further strengthen the light extraction efficiency of LED.
For white light LEDs, the upper surface of led chip 3 also covers the fluorescent material thin layer 8 of mixed fluorescent powder, can be under the exciting of led chip 3 the stronger white light of synthetic color rendering.
The upper surface that is encapsulated in the substratum transparent 7 of substrate 1 and led chip 3 tops is the sphere of projection, can utilize fluid injection or press mold technological forming, makes LED can make full use of the spotlight effect of sphere, further improves luminous efficiency.
Has a plurality of silver-colored through hole that connects its upper and lower surface on the substrate 1, can silver in these silver-colored through holes, be used for the heat of led chip 3 luminous generations is conducted to heat sink 6 of substrate 1 lower surface, heat sink 6 adopt metals such as aluminium or copper to make, corresponding with the position of silver-colored through hole, can be rapidly with distribute heat, avoid the LED junction temperature too high and influence light efficiency.Heat sink 6 also can be used as the pad of LED, are convenient to LED and are welded on the circuit board.
Embodiment two:
In the present embodiment, according to concrete needs, the upper surface of substratum transparent 7 can be set to plane or other shapes.
Embodiment three:
Compare with the substrate 1 of ceramic material, substrate 1 heat conductivility that adopts silicon to make significantly improves, and therefore, equal area of dissipation can carry more led chip 3.As shown in Figure 4, the LED of present embodiment comprises a plurality of led chips 3, and these led chips 3 all can be fixed on the metal interconnection layer of plating nanometer silverskin by the mode of eutectic weldering, and are each other in series or parallel.On the one hand, can effectively improve the brightness of great power LED, on the other hand, can simplified driving circuit, reduce cost, therefore can be widely used in various lighting fields.
For the great power LED that comprises a plurality of led chips 3, the upper surface of substratum transparent 7 also can be set to the sphere or the plane of projection according to demand, and in order further to improve light extraction efficiency, the upper surface of substratum transparent 7 also can be provided with the sphere of a plurality of projectioies.
Embodiment four:
As shown in Figure 5,, two pads 10 of LED can be arranged on the upper surface or the two ends of substrate 1, make it be distributed in the both sides of substratum transparent 7 according to concrete configuration needs.This packaged type is convenient to LED is welded on the circuit board by the circuit ways of connecting, can be applicable to street lamp, searchlight or other illuminating device.
Above content be in conjunction with concrete execution mode to further describing that the utility model is done, can not assert that concrete enforcement of the present utility model is confined to these explanations.For the utility model person of an ordinary skill in the technical field, under the prerequisite that does not break away from the utility model design, can also make some simple deduction or replace, all should be considered as belonging to protection range of the present utility model.
Claims (10)
1. a great power LED comprises silicon substrate, led chip and substratum transparent, it is characterized in that, the upper surface plating of described silicon substrate is used to draw the metal interconnection layer of described led chip electrode, the upper surface plating nanometer silverskin of described metal interconnection layer; Described led chip is fixed on the metal interconnection layer of described plating nanometer silverskin, and described substratum transparent covers the top of described silicon substrate and led chip.
2. great power LED as claimed in claim 1 is characterized in that, described metal interconnection layer comprises nickel dam and the silver layer that is plated on described silicon substrate upper surface successively.
3. great power LED as claimed in claim 1 is characterized in that, described metal interconnection layer comprises copper layer and the silver layer that is plated on described silicon substrate upper surface successively.
4. great power LED as claimed in claim 1 is characterized in that, described led chip eutectic is welded on the described metal interconnection layer.
5. as each described great power LED in the claim 1 to 4, it is characterized in that described metal interconnection layer comprises two parts of the positive and negative electrode of drawing led chip respectively, adopt the separator of insulation to separate between described two parts metal interconnection layer.
6. great power LED as claimed in claim 5 is characterized in that, described separator is the constant yellowish-white glue-line that is filled between described two parts metal interconnection layer.
7. as each described great power LED in the claim 1 to 4, it is characterized in that the upper surface of described led chip covers the fluorescent material thin layer.
8. as each described great power LED in the claim 1 to 4, it is characterized in that having on the described silicon substrate and adopt the silver slurry to connect the silver-colored through hole of its upper and lower surface, the lower surface of described silicon substrate also is provided with corresponding with the position of described silver-colored through hole heat sink.
9. as each described great power LED in the claim 1 to 4, it is characterized in that the quantity of described led chip is a plurality of, described a plurality of led chip serial or parallel connections.
10. as each described great power LED in the claim 1 to 4, it is characterized in that the upper surface of described substratum transparent is the sphere or the plane of projection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202122509U CN201804907U (en) | 2010-06-02 | 2010-06-02 | High-power LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202122509U CN201804907U (en) | 2010-06-02 | 2010-06-02 | High-power LED |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201804907U true CN201804907U (en) | 2011-04-20 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010202122509U Expired - Lifetime CN201804907U (en) | 2010-06-02 | 2010-06-02 | High-power LED |
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| Country | Link |
|---|---|
| CN (1) | CN201804907U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103311408A (en) * | 2013-06-08 | 2013-09-18 | 苏州金科信汇光电科技有限公司 | High-reflectivity LED support |
| CN110350064A (en) * | 2013-07-01 | 2019-10-18 | 晶元光电股份有限公司 | Light-emitting diode component and production method |
-
2010
- 2010-06-02 CN CN2010202122509U patent/CN201804907U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103311408A (en) * | 2013-06-08 | 2013-09-18 | 苏州金科信汇光电科技有限公司 | High-reflectivity LED support |
| CN110350064A (en) * | 2013-07-01 | 2019-10-18 | 晶元光电股份有限公司 | Light-emitting diode component and production method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20110420 |
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| CX01 | Expiry of patent term |