CN203150540U - Light emitting diode packaging structure - Google Patents
Light emitting diode packaging structure Download PDFInfo
- Publication number
- CN203150540U CN203150540U CN2013200413804U CN201320041380U CN203150540U CN 203150540 U CN203150540 U CN 203150540U CN 2013200413804 U CN2013200413804 U CN 2013200413804U CN 201320041380 U CN201320041380 U CN 201320041380U CN 203150540 U CN203150540 U CN 203150540U
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- CN
- China
- Prior art keywords
- emitting diode
- light
- backlight unit
- diode chip
- strip substrate
- Prior art date
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- Expired - Lifetime
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Led Device Packages (AREA)
Abstract
The utility model provides a light emitting diode packaging structure comprising a strip substrate, a plurality of light emitting diode chips and a wavelength conversion layer. The strip substrate is provided with a top surface and a bottom surface opposite to each other, and also comprises a side surface connecting the top surface with the bottom surface. The light emitting diode chips at least reversely coated on the top surface of the strip substrate and are electrically connected with the strip substrate. The wavelength conversion layer at least wraps a light emitting surface of each light emitting diode chip.
Description
Technical field
The utility model relates to a kind of semiconductor package, relates in particular to a kind of package structure for LED.
Background technology
That light-emitting diode has is long such as the life-span, volume is little, high shock resistance, low-heat produces and advantage such as low power consumption, therefore has been widely used in indicating device or light source in family expenses and the various device.In recent years, light-emitting diode is towards multicolour and high brightness development, so its application has extended to large-scale billboards, traffic lights and association area.In future, light-emitting diode even may become the main lighting source that has power saving and environment-friendly function concurrently.
Prior art is that a plurality of light-emitting diode chip for backlight unit after having encapsulated are arranged on the loading plate, then this loading plate is arranged on the lamp socket again, covers upper lamp shade afterwards again and namely can be assembled into a led lamp.Yet, because the light-emitting diode chip for backlight unit after having encapsulated in the existing led lamp is to be fixed near on the lamp socket, though can make existing led lamp that the effect of optically focused is arranged, the lighting angle maximum of this kind prior art only can arrive 180 degree (following).Therefore, with this led lamp during as the room lighting purposes, can't replace in the past lighting angle greater than the incandescent lamp bulbs of 300 degree.In addition, owing to light-emitting diode chip for backlight unit is to be arranged on the loading plate after encapsulating, so light-emitting diode chip for backlight unit produces heat and is difficult for being passed to the external world by loading plate, has the not good problem of radiating efficiency and produces.
The utility model content
The utility model provides a kind of package structure for LED, has bigger lighting angle (being full round angle) and preferable radiating effect.
The utility model provides a kind of package structure for LED, and it comprises a strip substrate, a plurality of light-emitting diode chip for backlight unit and a wavelength conversion layer.The strip substrate has a upper surface respect to one another is connected upper surface and lower surface with a lower surface and one side surface.Light-emitting diode chip for backlight unit is overlying at least on the upper surface of strip substrate and with the strip substrate and electrically connects.Wavelength conversion layer coats an exiting surface of each light-emitting diode chip for backlight unit at least.
In an embodiment of the present utility model, above-mentioned wavelength conversion layer also extends upper surface, lower surface and the side surface that is covered in the strip substrate.
In an embodiment of the present utility model, the length-width ratio of above-mentioned strip substrate is between 2 to 30.
In an embodiment of the present utility model, above-mentioned strip substrate is a printing opacity strip substrate.
In an embodiment of the present utility model, above-mentioned light-emitting diode chip for backlight unit comprises a plurality of first light-emitting diode chip for backlight unit and a plurality of second light-emitting diode chip for backlight unit, first light-emitting diode chip for backlight unit is overlying on the upper surface of strip substrate, and second light-emitting diode chip for backlight unit is overlying on the lower surface of strip substrate.
In an embodiment of the present utility model, the above-mentioned orthographic projection of first light-emitting diode chip for backlight unit on the upper surface of strip substrate is overlapped in second light-emitting diode chip for backlight unit fully in the orthographic projection of the upper surface of strip substrate.
In an embodiment of the present utility model, the above-mentioned orthographic projection of first light-emitting diode chip for backlight unit on the upper surface of strip substrate partially overlaps second light-emitting diode chip for backlight unit in the orthographic projection of the upper surface of strip substrate.
In an embodiment of the present utility model, the above-mentioned orthographic projection of first light-emitting diode chip for backlight unit on the upper surface of strip substrate is not overlapped in second light-emitting diode chip for backlight unit in the orthographic projection of the upper surface of strip substrate.
In an embodiment of the present utility model, above-mentioned light-emitting diode chip for backlight unit also comprises a plurality of the 3rd light-emitting diode chip for backlight unit, and the 3rd light-emitting diode chip for backlight unit is overlying on the part side surface of strip substrate.
In an embodiment of the present utility model, above-mentioned light-emitting diode chip for backlight unit is and equidistantly is arranged on the strip substrate.
In an embodiment of the present utility model, above-mentioned light-emitting diode chip for backlight unit is the light-emitting diode chip for backlight unit of a plurality of same colors.
In an embodiment of the present utility model, above-mentioned light-emitting diode chip for backlight unit is the combination of the light-emitting diode chip for backlight unit of a plurality of different colours.
In an embodiment of the present utility model, above-mentioned wavelength conversion layer is a yellow wavelengths conversion layer.
In an embodiment of the present utility model, above-mentioned wavelength conversion layer comprises the wavelength conversion layer of a plurality of different colours.
Based on above-mentioned, the utility model is that a plurality of light-emitting diode chip for backlight unit directly are disposed on the strip substrate, and therefore package structure for LED of the present utility model can have preferable radiating effect.Moreover because wavelength conversion layer coats the exiting surface of light-emitting diode chip for backlight unit at least, therefore package structure for LED of the present utility model is the design of a multiaspect bright dipping.In addition, when package structure for LED of the present utility model is applied to light fixture, because package structure for LED of the present utility model can arrange by rough vertical lamp seat, therefore can provide bigger lighting angle (being full round angle).Therefore, package structure for LED of the present utility model extremely is beneficial to and is applied to throw light on or other need in the field of big rising angle.
For above-mentioned feature and advantage of the present utility model can be become apparent, embodiment cited below particularly, and conjunction with figs. is described in detail below.
Description of drawings
Shown in Figure 1A is the generalized section of a kind of package structure for LED of an embodiment of the present utility model;
Shown in Figure 1B is the schematic top plan view of the package structure for LED of Figure 1A;
Shown in Fig. 2 is the generalized section of a kind of package structure for LED of another embodiment of the present utility model;
Shown in Fig. 3 is the generalized section of a kind of package structure for LED of another embodiment of the present utility model;
The schematic perspective view of the led lamp that the package structure for LED for using a plurality of Fig. 3 shown in Fig. 4 is formed.
Description of reference numerals:
100a, 100b, 100c: package structure for LED;
110a, 110b, 110c: strip substrate;
112a, 112b, 112c: upper surface;
114a, 114b, 114c: lower surface;
116a, 116b, 116c: side surface;
120a: light-emitting diode chip for backlight unit;
122a: exiting surface;
120b1,120c1: first light-emitting diode chip for backlight unit;
120b2,120c2: second light-emitting diode chip for backlight unit;
120c3: the 3rd light-emitting diode chip for backlight unit;
130a, 130b, 130c: wavelength conversion layer;
200: led lamp;
210: lamp socket;
220: lampshade;
230: electric wire;
L: length;
W: width.
Embodiment
Shown in Figure 1A is the generalized section of a kind of package structure for LED of an embodiment of the present utility model.Please refer to Figure 1A, package structure for LED 100a comprises a strip substrate 110a, a plurality of light-emitting diode chip for backlight unit 120a and a wavelength conversion layer 130a.Strip substrate 110a has a upper surface 112a respect to one another is connected upper surface 112a and lower surface 114a with a lower surface 114a and side surface 116a.The upper surface 112a that light-emitting diode chip for backlight unit 120a is overlying on strip substrate 110a at least goes up and electrically connects with strip substrate 110a.Wavelength conversion layer 130a coats the exiting surface 122a of each light-emitting diode chip for backlight unit 120a at least.Uniformity for the facility on the manufacturing process and light type, wavelength conversion layer 130a can further extend upper surface 112a, lower surface 114a and the side surface 116a that covers strip substrate 110a, but because wavelength conversion layer 130a only need coat the exiting surface 122a of each light-emitting diode chip for backlight unit 120a at least, therefore in unshowned accompanying drawing, wavelength conversion layer 130a also can only be covered in the upper surface 112a of strip substrate 110a, is not limited at this.
Specifically, the light-emitting diode chip for backlight unit 120a of present embodiment covers brilliant mode to be disposed on the strip substrate 110a, and therefore the thickness of whole package structure for LED 100a can be thinner.Moreover light-emitting diode chip for backlight unit 120a directly is disposed on the upper surface 112a of strip substrate 110a, so the heat that produces of light-emitting diode chip for backlight unit 120a can be directly be passed to the external world via lower surface 114a or the side surface 116a of strip substrate 110a.In addition, light-emitting diode chip for backlight unit 120a is equidistantly to be arranged on the strip substrate 110a, and wherein light-emitting diode chip for backlight unit 120a can be the light-emitting diode chip for backlight unit of same color, for example is the light-emitting diode chip for backlight unit that can send blue light all; Also can select the combination of the light-emitting diode chip for backlight unit of different colours at different designs and demand, for example be the combination of the light-emitting diode chip for backlight unit of blue light, ruddiness or green glow, do not limited at this.Wavelength conversion layer 130a can be a yellow wavelengths conversion layer, for example is a yellow fluorophor; Also can select the combination of the wavelength conversion layer of different colours at different designs and demand, for example be the combination of yellow wavelengths conversion layer and red wavelength conversion layer.In more detail, present embodiment itself just can pass through the compound action of light-emitting diode chip for backlight unit 120a and wavelength conversion layer 130a, and produces a white light source.
The strip substrate 110a of present embodiment is embodied as a printing opacity strip substrate, therefore the light that sends of light-emitting diode chip for backlight unit 120a except can be directly with the upper surface 112a that covers strip substrate 110a on wavelength conversion layer 130a generation effect, the light that light-emitting diode chip for backlight unit 120a sends is penetrable strip substrate 110a and directly and cover the lower surface 114a of strip substrate 110a and the wavelength conversion layer 130a generation effect on the side surface 116a also.That is to say that the package structure for LED 100a of present embodiment is the structural design of a multifaceted light-emitting.
Please refer to Figure 1B, shown in Figure 1B is the schematic top plan view of the package structure for LED 100a of Figure 1A wherein.The length L of the strip substrate 110a of present embodiment and the ratio of width W in this way between 2 to 30, preferably, between 4 to 15.In other words, the package structure for LED 100a of present embodiment is the package structure for LED of a strip.Particularly, the design of this strip makes the package structure for LED 100a of present embodiment to obtain best luminous efficiency and radiating effect under the unit are of minimum is utilized.
In this mandatory declaration is that following embodiment continues to use element numbers and the partial content of previous embodiment, wherein adopts identical label to represent identical or approximate element, and has omitted the explanation of constructed content.Explanation about clipped can be with reference to previous embodiment, and following embodiment no longer repeats to give unnecessary details.
Shown in Fig. 2 is the generalized section of a kind of package structure for LED of another embodiment of the present utility model.Please refer to Fig. 2, the package structure for LED 100b of present embodiment is similar to the package structure for LED 100a of Figure 1A, and only the two main difference part is: the light-emitting diode chip for backlight unit of the package structure for LED 100b of present embodiment comprises a plurality of first light-emitting diode chip for backlight unit 120b1 and a plurality of second light-emitting diode chip for backlight unit 120b2.The upper surface 112b that the first light-emitting diode chip for backlight unit 120b1 is overlying on strip substrate 110b goes up and electrically connects with strip substrate 110b.The lower surface 114b that the second light-emitting diode chip for backlight unit 120b2 is overlying on strip substrate 110b goes up and electrically connects with strip substrate 110b.As shown in Figure 2, the orthographic projection of the first light-emitting diode chip for backlight unit 120b on the upper surface 112b of strip substrate 110b of present embodiment partially overlaps the second light-emitting diode chip for backlight unit 120b2 in the orthographic projection of the upper surface 112b of strip substrate 110b.Certainly, in other unshowned embodiment, the orthographic projection of the first light-emitting diode chip for backlight unit 120b1 on the upper surface 112b of strip substrate 110b is overlapped in the second light-emitting diode chip for backlight unit 120b2 fully in the orthographic projection of the upper surface 112b of strip substrate 110b; Or the orthographic projection of the first light-emitting diode chip for backlight unit 120b1 on the upper surface 112b of strip substrate 110b is not overlapped in the second light-emitting diode chip for backlight unit 120b2 in the orthographic projection of the upper surface 112b of strip substrate 110b.
The light that the first light-emitting diode chip for backlight unit 120b1 of present embodiment and the second light-emitting diode chip for backlight unit 120b2 send except can be directly with cover the upper surface 112b of strip substrate 110b and the wavelength conversion layer 130b generation effect on the lower surface 114b, the light that the first light-emitting diode chip for backlight unit 120b1 and the second light-emitting diode chip for backlight unit 120b2 send is penetrable strip substrate 110b and direct and cover wavelength conversion layer 130b generation effect on the side surface 116b of strip substrate 110b also.That is to say that the package structure for LED 100b of present embodiment is the structural design of a multifaceted light-emitting.In addition, because the light-emitting diode chip for backlight unit of present embodiment is to be arranged on simultaneously on the upper surface 112b and lower surface 114b of strip substrate 110b, so the package structure for LED 100b of present embodiment has higher brightness compared to the package structure for LED 100a of previous embodiment and shows.
Shown in Fig. 3 is the generalized section of a kind of package structure for LED of another embodiment of the present utility model.Please refer to Fig. 3, the package structure for LED 100c of present embodiment is similar to the package structure for LED 100a of Figure 1A, and only the two main difference part is: the light-emitting diode chip for backlight unit of the package structure for LED 100c of present embodiment comprises a plurality of first light-emitting diode chip for backlight unit 120c1, a plurality of second light-emitting diode chip for backlight unit 120c2 and a plurality of the 3rd light-emitting diode chip for backlight unit 120c3.The upper surface 112c that the first light-emitting diode chip for backlight unit 120c1 is overlying on strip substrate 110c goes up and electrically connects with strip substrate 110c.The lower surface 114c that the second light-emitting diode chip for backlight unit 120c2 is overlying on strip substrate 110c goes up and electrically connects with strip substrate 110c.The part side surface 116c that the 3rd light-emitting diode chip for backlight unit 120c3 is overlying on strip substrate 110c goes up and electrically connects with strip substrate 110c.Wavelength conversion layer 130c coats the first light-emitting diode chip for backlight unit 120c1, the second light-emitting diode chip for backlight unit 120c2 and the 3rd light-emitting diode chip for backlight unit 120c3 and extends upper surface 112c, lower surface 114c and the side surface 116c that covers strip substrate 110c.
Because on the first light-emitting diode chip for backlight unit 120c1, the second light-emitting diode chip for backlight unit 120c2 of present embodiment and upper surface 112c, the lower surface 114c and side surface 116c that the 3rd light-emitting diode chip for backlight unit 120c3 is arranged at strip substrate 110c respectively.Therefore, the package structure for LED 100c of present embodiment is the structural design of a multifaceted light-emitting.In addition, because the light-emitting diode chip for backlight unit of present embodiment is on upper surface 112c, the lower surface 114c and side surface 116c that is arranged at strip substrate 110c simultaneously, so the package structure for LED 100c of present embodiment has the higher brightness performance compared to the package structure for LED 100a of previous embodiment.
What deserves to be mentioned is that the package structure for LED 100c of present embodiment also can be applied in the use of light fixture.Please refer to Fig. 4, led lamp 200 comprises a plurality of package structure for LED 100c, a lamp socket 210, a lampshade 220 and many electric wires 230.Package structure for LED 100c is disposed in the lampshade 220 and rough vertical lamp socket 210 arranges, and wherein package structure for LED 100c electrically connects with electric wire 230 respectively.Because the package structure for LED 100c of present embodiment vertically lamp socket 210 arranges, and therefore can provide bigger lighting angle (being full round angle).In brief, the package structure for LED 100c of present embodiment was beneficial to and is applied to throw light on or other need in the field of big rising angle in ten minutes.
In addition, in other unshowned embodiment, also can be selected to mentioned package structure for LED 100a, the 100b of embodiment as described above, those skilled in the art works as can be with reference to the explanation of previous embodiment, according to actual demand, and select aforementioned components for use, to reach the required technique effect of led lamp.
In sum, the utility model is that a plurality of light-emitting diode chip for backlight unit directly are disposed on the strip substrate, and therefore package structure for LED of the present utility model can have preferable radiating effect.Moreover, because wavelength conversion layer coats an exiting surface of each light-emitting diode chip for backlight unit at least, and can further cover upper surface, lower surface and the side surface of strip substrate, therefore package structure for LED of the present utility model is the design of a multiaspect bright dipping.In addition, when package structure for LED of the present utility model is applied to light fixture, because package structure for LED of the present utility model can arrange by rough vertical lamp seat, therefore can provide bigger lighting angle (being full round angle).Therefore, package structure for LED of the present utility model extremely is beneficial to and is applied to throw light on or other need in the field of big rising angle.
It should be noted that at last: above each embodiment is not intended to limit only in order to the technical solution of the utility model to be described; Although have been described in detail with reference to the utility model of aforementioned each embodiment, those of ordinary skill in the art is to be understood that: it still can be made amendment to the technical scheme that aforementioned each embodiment puts down in writing, and perhaps some or all of technical characterictic wherein is equal to replacement; And these modifications or replacement do not make the essence of appropriate technical solution break away from the scope of each embodiment technical scheme of the utility model.
Claims (14)
1. a package structure for LED is characterized in that, comprising:
One strip substrate has a upper surface respect to one another is connected this upper surface and this lower surface with a lower surface and one side surface;
A plurality of light-emitting diode chip for backlight unit are overlying at least on this upper surface of this strip substrate and with this strip substrate and electrically connect; And
One wavelength conversion layer coats a respectively exiting surface of this light-emitting diode chip for backlight unit at least.
2. package structure for LED according to claim 1 is characterized in that, this wavelength conversion layer also extends this upper surface, this lower surface and this side surface that is covered in this strip substrate.
3. package structure for LED according to claim 1 is characterized in that, the length-width ratio of this strip substrate is between 2 to 30.
4. package structure for LED according to claim 1 is characterized in that, this strip substrate is a printing opacity strip substrate.
5. package structure for LED according to claim 1, it is characterized in that, those light-emitting diode chip for backlight unit comprise a plurality of first light-emitting diode chip for backlight unit and a plurality of second light-emitting diode chip for backlight unit, those first light-emitting diode chip for backlight unit are overlying on this upper surface of this strip substrate, and those second light-emitting diode chip for backlight unit are overlying on this lower surface of this strip substrate.
6. package structure for LED according to claim 5, it is characterized in that the orthographic projection of those first light-emitting diode chip for backlight unit on this upper surface of this strip substrate is overlapped in those second light-emitting diode chip for backlight unit fully in the orthographic projection of this upper surface of this strip substrate.
7. package structure for LED according to claim 5, it is characterized in that the orthographic projection of those first light-emitting diode chip for backlight unit on this upper surface of this strip substrate partially overlaps those second light-emitting diode chip for backlight unit in the orthographic projection of this upper surface of this strip substrate.
8. package structure for LED according to claim 5, it is characterized in that the orthographic projection of those first light-emitting diode chip for backlight unit on this upper surface of this strip substrate is not overlapped in those second light-emitting diode chip for backlight unit in the orthographic projection of this upper surface of this strip substrate.
9. package structure for LED according to claim 5 is characterized in that, those light-emitting diode chip for backlight unit also comprise a plurality of the 3rd light-emitting diode chip for backlight unit, and those the 3rd light-emitting diode chip for backlight unit are overlying on this side surface of part of this strip substrate.
10. package structure for LED according to claim 1 is characterized in that, those light-emitting diode chip for backlight unit are and equidistantly are arranged on this strip substrate.
11. package structure for LED according to claim 1 is characterized in that, those light-emitting diode chip for backlight unit are the light-emitting diode chip for backlight unit of a plurality of same colors.
12. package structure for LED according to claim 1 is characterized in that, those light-emitting diode chip for backlight unit are the combination of the light-emitting diode chip for backlight unit of a plurality of different colours.
13. package structure for LED according to claim 1 is characterized in that, this wavelength conversion layer is a yellow wavelengths conversion layer.
14. package structure for LED according to claim 1 is characterized in that, this wavelength conversion layer comprises the wavelength conversion layer of a plurality of different colours.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013200413804U CN203150540U (en) | 2013-01-25 | 2013-01-25 | Light emitting diode packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013200413804U CN203150540U (en) | 2013-01-25 | 2013-01-25 | Light emitting diode packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203150540U true CN203150540U (en) | 2013-08-21 |
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ID=48978048
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013200413804U Expired - Lifetime CN203150540U (en) | 2013-01-25 | 2013-01-25 | Light emitting diode packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203150540U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111463332A (en) * | 2019-01-18 | 2020-07-28 | 群创光电股份有限公司 | Electronic device with light emitting diode package |
| CN112447897A (en) * | 2019-09-03 | 2021-03-05 | 李家铭 | RGB light-emitting diode module with shading film |
-
2013
- 2013-01-25 CN CN2013200413804U patent/CN203150540U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111463332A (en) * | 2019-01-18 | 2020-07-28 | 群创光电股份有限公司 | Electronic device with light emitting diode package |
| CN111463332B (en) * | 2019-01-18 | 2021-07-27 | 群创光电股份有限公司 | Electronic device with light emitting diode package |
| CN112447897A (en) * | 2019-09-03 | 2021-03-05 | 李家铭 | RGB light-emitting diode module with shading film |
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| C14 | Grant of patent or utility model | ||
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Granted publication date: 20130821 |