CN111463332B

CN111463332B - Electronic device with light emitting diode package

Info

Publication number: CN111463332B
Application number: CN201910843568.2A
Authority: CN
Inventors: 胡顺源; 丁景隆; 高克毅; 毛立维
Original assignee: Innolux Corp
Current assignee: Innolux Corp
Priority date: 2019-01-18
Filing date: 2019-09-06
Publication date: 2021-07-27
Anticipated expiration: 2039-09-06
Also published as: CN111463332A

Abstract

Some embodiments of the present invention provide a light emitting diode package. The LED package comprises a transparent substrate. The light emitting diode package also includes a first light emitting diode disposed on the transparent substrate and having a first multiple quantum well structure. The light emitting diode package further comprises a second light emitting diode disposed on the transparent substrate and having a second multiple quantum well structure. The first multiple quantum well structure and the second multiple quantum well structure are arranged to emit light of different wavelengths.

Description

Electronic device with light emitting diode package

Technical Field

The present invention relates to an electronic device having a light emitting diode package, and more particularly, to a light emitting diode package having a transparent substrate and an electronic device using the same.

Background

Light emitting diodes have been widely used and are moving toward mass production or thinning. Therefore, how to increase the yield of the led package or reduce the thickness of the led package has become one of important items.

Disclosure of Invention

Some embodiments of the present invention provide a light emitting diode package. The LED package comprises a transparent substrate. The light emitting diode package also includes a first light emitting diode disposed on the transparent substrate and having a first multiple quantum well structure. The light emitting diode package further comprises a second light emitting diode arranged on the transparent substrate and having a second multiple quantum well structure. The first multiple quantum well structure and the second multiple quantum well structure are arranged to emit light of different wavelengths.

Some embodiments of the invention provide an electronic device. The electronic device comprises a circuit substrate. The electronic device also comprises a light emitting diode package arranged on the circuit substrate. The LED package comprises a transparent substrate. The light emitting diode package also includes a first light emitting diode disposed on the transparent substrate and having a first multiple quantum well structure. The light emitting diode package further comprises a second light emitting diode arranged on the transparent substrate and having a second multiple quantum well structure. The first multiple quantum well structure and the second multiple quantum well structure are arranged to emit light of different wavelengths.

Drawings

In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below, wherein:

FIG. 1 is a schematic cross-sectional view of a light emitting diode package according to some embodiments of the invention;

FIG. 2 is a schematic cross-sectional view of a light emitting diode package according to some embodiments of the invention;

FIG. 3 is a schematic cross-sectional view of a light emitting diode package according to some embodiments of the invention;

FIG. 4 is a schematic cross-sectional view of a light emitting diode package according to some embodiments of the invention;

FIG. 5 is a schematic cross-sectional view of a light emitting diode package according to some embodiments of the invention;

FIG. 6 is a schematic cross-sectional view of a light emitting diode package according to some embodiments of the invention;

FIG. 7 depicts a top view of a light emitting cell, according to some embodiments of the invention;

FIG. 8 depicts a top view of a light emitting cell, according to some embodiments of the invention;

FIG. 9 is a schematic cross-sectional view of an electronic device according to some embodiments of the invention;

FIG. 10 is a schematic cross-sectional view of an electronic device, according to some embodiments of the invention;

11A-11E illustrate cross-sectional views of a method of fabricating an electronic device at various stages, in accordance with some embodiments of the present invention;

12A-12D illustrate schematic cross-sectional views of a method of fabricating an electronic device at various stages, in accordance with some embodiments of the present invention;

fig. 13 is an enlarged cross-sectional view of a conductive pad of an electronic device, according to some embodiments of the invention.

Description of the symbols

10A, 10B, 10C, 10D, 10E, 10F light emitting diode packages

20A, 20B, 20C, 20D electronic device

110 transparent substrate

120A, 120B, 120C light emitting diode

122A, 122B, 122C multiple quantum well structures

124 conductive pad

1241 conducting layer

1242 attachment layer

1243 Barrier layer

1244 intermetallic compound layer

126A, 126B epitaxial substrate

130 adhesive layer

140 anti-reflection layer

150 light-shielding layer

160 protective layer

170 thickness adjusting layer

180 welding layer

190 electric conduction pad

192 conductive layer

194 Barrier layer

196 intermetallic compound layer

210 circuit board

212 conductive pad

214 welding layer

220 protective layer

230 light-shielding layer

240 adhesive layer

250 conductive element

260 protective layer

Lower surface of DS

S₁、S₂、S₃Surface of

T₁、T₂、T₃Thickness of

O opening

H₁、H₂Thickness of

U1, U2, U3, U4 and U5 light-emitting units

X second direction

Y first direction

Direction of Z normal

Detailed Description

The following description is directed to some embodiments of a light emitting diode package and a method for manufacturing the same. It is to be understood that the following provides different embodiments, which are intended to illustrate different aspects of the invention. The particular elements and arrangements of elements described below are exemplary only and not limiting. Moreover, the repeated use of reference numbers or designations in the various embodiments is merely intended to clearly identify some of the embodiments and does not necessarily indicate any relationship between the various embodiments and/or structures discussed. Moreover, when a first layer is disposed on or located above a second layer, the first layer and the second layer can be in direct contact. Alternatively, one or more layers of other materials may be present, in which case there may not be direct contact between the first and second layers.

As used herein, the terms "about," "substantially," "approximately," and "approximately" mean within 20%, within 10%, within 5%, within 3%, within 2%, within 1%, or within 0.5% of a given value or range. The given quantity is an approximate quantity, i.e., the meanings of "about", "about" and "approximately" are implied unless specifically stated otherwise.

It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms, and these terms are only used to distinguish different elements, components, regions, layers and/or sections. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of some embodiments of the present invention.

Unless defined otherwise, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present invention and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

Some embodiments of the invention can be understood with reference to the drawings, which are also to be considered part of the description of the embodiments of the invention. It is to be understood that the drawings of the embodiments of the present invention are not necessarily drawn to scale as actual devices or elements may be shown. The shapes and thicknesses of elements (or layers) in the embodiments may be exaggerated in the drawings to clearly show the characteristics thereof.

In some embodiments of the present invention, relative terms such as "lower", "upper", "horizontal", "vertical", "lower", "upper", "top", "bottom", and the like, are to be understood as referring to the sections and relative drawings in the illustrative and non-restrictive sense. This relative terminology is for convenience of description only and does not imply that the described apparatus should be constructed or operated in a particular orientation. Terms concerning junctions, links, such as "connected," "interconnected," and the like, may refer to two structures as being in direct contact, or may refer to two structures as being not in direct contact, unless otherwise specified, with other structures disposed between the two structures. And the terms coupled and connected should also be construed to include both structures being movable or both structures being fixed.

It is noted that the term "substrate" or "panel" may include devices (such as transistor devices or circuits) formed on the substrate and layers covering the substrate, but the term "substrate" is merely used to indicate a flat substrate for simplifying the drawings.

Referring to fig. 1, a cross-sectional view of a light emitting diode package 10A is shown according to some embodiments of the invention. The led packages shown in fig. 1 and other embodiments below are omitted for simplicity, additional elements may be added as needed, and elements described in the following embodiments may be optionally replaced or omitted.

In some embodiments, as shown in fig. 1, the light emitting diode package 10A may include a transparent substrate 110. The transparent substrate 110 has, for example, a high transmittance in some wavelength bands of light (e.g., a wavelength band of visible light), and the transmittance of light is, for example, more than 80% (or 90%), but is not limited thereto. In some embodiments, the transparent substrate 110 may include glass, ceramic, plastic, Polyimide (PI), Sapphire (Sapphire), other suitable substrates, or a combination thereof, but is not limited thereto. In some embodiments, the transparent substrate 110 has a high transmittance, such as greater than 80% (or 90%), but not limited thereto, for example, for infrared light, ultraviolet light, and/or other suitable wavelength bands.

In some embodiments (as shown in fig. 1), the led package 10A may include a plurality of leds, such as, but not limited to, the led 120A, the led 120B, and the led 120C. In some embodiments, the

leds

120A, 120B, 120C may emit light of different colors (or wavelengths), for example, but not limited thereto. For example, the led 120A can emit blue light, the led 120B can emit green light, and the led 120C can emit red light, but not limited thereto, the leds can emit light with other suitable colors (or wavelengths) according to the requirement. The light emitting diode may include, for example, an Organic Light Emitting Diode (OLED), an inorganic Light Emitting Diode (LED), such as a micro-LED or a micro-LED, or a quantum dot LED (which may be, for example, a QLED or a QDLED), a Quantum Dot (QD), a fluorescent light (phosphor), a phosphorescent light (phosphor), other suitable materials, or a combination thereof, but is not limited thereto. In other embodiments (not shown), the led package 10A may include a plurality of leds, which may emit light with the same color (or wavelength) (such as, but not limited to, blue light or UV light), and light conversion layers (not shown) may be respectively disposed on the leds according to requirements, and the light conversion layers may be used to convert the light emitted by the leds into light with a desired color, but not limited to. The light conversion layer may include fluorescent (phosphorescence), phosphorescent (phor), Quantum Dot (QD), color filter, other suitable materials, or a combination thereof, but is not limited thereto.

In some embodiments (e.g., fig. 1), the

light emitting diodes

120A, 120B, 120C may include multiple

quantum well structures

122A, 122B, 122C, respectively, for example. In some embodiments, the multiple quantum well structure 122A, the multiple quantum well structure 122B, and the multiple quantum well structure 122C may respectively include at least one light emitting layer and at least two semiconductor layers (not shown), for example, but not limited thereto, disposed on two sides of the light emitting layer. In some embodiments, the light emitting layer may comprise a homojunction (homojunction), a heterojunction (heterojunction), a single-quantum well (SQW), other suitable structures, or combinations thereof. In some embodiments, the semiconductor layer may include GaN, InN, AlN, In_xGa_(1-x)N、Al_xIn_(1-x)N、Al_xIn_yGa_(1-x-y)N, other suitable materials, or combinations of the above, but not limited thereto.

In some embodiments, multiple quantum well structure 122A, multiple quantum well structure 122B, and multiple quantum well structure 122C may comprise single layer or composite layer structures. The multiple

quantum well structures

122A, 122B, and 122C may be formed by Metal Organic Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), Liquid Phase Epitaxy (LPE), or other suitable methods, or combinations thereof, but is not limited thereto.

In addition, the

light emitting diodes

120A, 120B, and 120C may include conductive pads 124, for example, and the conductive pads 124 of different light emitting diodes are disposed on the surfaces S2 of the corresponding multiple

quantum well structures

122A, 122B, and 122C, respectively. The conductive pads 124 are used for electrically connecting the

light emitting diodes

120A, 120B and/or 120C with conductive pads (not shown) on the circuit substrate 120 (refer to fig. 11E), but not limited thereto. In some embodiments, the conductive pad 124 may include a metal material such as copper (Cu), nickel (Ni), gold (Au), titanium (Ti), aluminum (Al), molybdenum (Mo), chromium (Cr), palladium (Pt), silver (Ag), aluminum (Al), tungsten (W), other metal materials, alloys thereof, or combinations thereof, and/or a transparent conductive material.

In some embodiments, the led package 10A may include an adhesive layer 130, for example, the adhesive layer 130 is disposed between the

leds

120A, 120B and/or 120C and the transparent substrate 110. The adhesive layer 130 may, for example, adhere the

light emitting diodes

120A, 120B, and/or 120C to the transparent substrate 110. In some embodiments, the adhesive layer 130 may include a transparent material, such as an Optically Clear Adhesive (OCA), an Optically Clear Resin (OCR), a moisture-curable adhesive, a photo-curable adhesive, other suitable materials, or a combination thereof, but is not limited thereto.

In some embodiments, the

light emitting diodes

120A, 120B and/or 120C may each have a surface S₁Relative to the surface S₂Surface S₁E.g. arranged adjacent to the transparent substrate 110, surface S₂For example, away from the transparent substrate 110.

Referring to fig. 2, a cross-sectional view of a light emitting diode package 10B is shown according to some embodiments of the invention. The led package 10B is similar to the led package 10A, one of which differs in that: the transparent substrate 110 may be an epitaxial substrate used to dispose or form the light emitting diode 120A. In some embodiments, the led 120A emits blue light, for example, and the substrate on which the led 120A is disposed or formed includes, but is not limited to, a sapphire substrate, a gallium phosphide (GaP) substrate, other suitable substrates, or a combination thereof. In the above embodiments, the light emitting diode 120A and the substrate (which may be the transparent substrate 110) are separated without performing a dicing process, for example, and thus an adhesive layer may not be required between the light emitting diode 120A and the substrate (which may be the transparent substrate 110), but the invention is not limited thereto. In addition, in this embodiment, a plurality of light emitting diodes 120B (e.g., emitting green light) may be disposed on the epitaxial substrate, for example, the light emitting diodes 120B may be separated from each other by a dicing process, for example, and the epitaxial substrate may be separated from each other by dicing into a plurality of epitaxial substrate portions. The plurality of epitaxial substrate portions may correspond to one light emitting diode 120B, but is not limited thereto. Subsequently, the epitaxial substrate portion of the leds 120B may be selectively removed, for example, completely or partially, and removed, for example, by laser, grinding or other suitable means, but is not limited thereto. Similarly, the light emitting diodes 120C (e.g., emitting red light) may be similar to the light emitting diodes 120B, a plurality of the light emitting diodes 120C may be disposed on an epitaxial substrate, for example, the light emitting diodes 120C may be separated from each other by a dicing process, the epitaxial substrate may be separated from each other by dicing into a plurality of epitaxial substrate portions, for example, the plurality of epitaxial substrate portions may correspond to one light emitting diode 120C, but the invention is not limited thereto. Subsequently, the epitaxial substrate portion of the leds 120C may be selectively removed or partially removed (as above), but is not limited thereto.

As described above, for example, the adhesive layer 130 is disposed between the light emitting diode 120B (and/or the light emitting diode 120C) and the transparent substrate 110, and the light emitting diode 120B (and/or the light emitting diode 120C) is adhered to the transparent substrate 110 through the adhesive layer 130, but not limited thereto.

Referring to fig. 3, a cross-sectional view of a light emitting diode package 10C is shown according to some embodiments of the invention. The led package 10C is similar to the led package 10A, one of which differs in that: the transparent substrate 110 may be an epitaxial substrate used to form the light emitting diode 120B (e.g., emitting green light). As described above, the transparent substrate 110 may include a sapphire substrate, a gallium phosphide (GaP) substrate, other suitable substrates, or a combination thereof, but is not limited thereto. In this embodiment, the light emitting diode 120B and the transparent substrate 110 are separated without performing a dicing process, and therefore the adhesive layer 130 is not required to be disposed between the light emitting diode 120B and the transparent substrate 110. In this embodiment, the light emitting diodes 120A (e.g., emitting blue light) and 120C (e.g., emitting red light) may be separated from each other into a plurality of epitaxial substrate portions by cutting the light emitting diodes 120A and/or 120C and the epitaxial substrate thereof through a cutting process, for example, similar to fig. 2, and the adhesive layer 130 is disposed between the light emitting diodes 120A and/or 120C and the transparent substrate 110, for example, and the

light emitting diodes

120A and 120C are adhered to the transparent substrate 110 through the adhesive layer 130, but not limited thereto.

Referring to fig. 4, a cross-sectional view of a light emitting diode package 10D is shown according to some embodiments of the invention. The led package 10D is similar to the led package 10A, one of which differs in that: the led package 10D further includes an anti-reflection layer 140, for example, but not limited to, the anti-reflection layer 140 may be disposed between the transparent substrate 110 and the adhesion layer 130. In other embodiments (not shown), the anti-reflective layer 140 may be disposed on the surface S of the transparent substrate 110 away from the light emitting diodes (120A, 120B, and/or 120C), for example₃The above. In some embodiments, the refractive index of the antireflective layer 140 can be in the range of 1.35 to 1.55 (1.35 ≦ refractive index ≦ 1.55), or the refractive index can be in the range of 1.60 to 2.20 (1.6 ≦ refractive index ≦ 2.2), but is not limited thereto. In some embodiments, the antireflective layer 140 may comprise, for example, a single layer structure, a multilayer, or a composite layer structure. For example, the anti-reflective layer 140 may be, for example, a bagIncluding, but not limited to, a multi-layer structure in which low refractive index layers and/or high refractive index layers are stacked. In some embodiments, the anti-reflective layer 140 may be formed by a Physical Vapor Deposition (PVD) process, a Chemical Vapor Deposition (CVD) process, or other processes. The anti-reflection layer 140 may be used to increase the transmittance of the led package 10D or reduce the amount of external light reflected by the led package 10D.

Referring to fig. 5, a cross-sectional view of a light emitting diode package 10E is shown according to some embodiments of the invention. The led package 10E is similar to the led package 10A, one of which differs in that: the led package 10E includes at least one light-shielding layer 150 and/or at least one protection layer 160, wherein the light-shielding layer 150 is disposed between the transparent substrate 110 and the protection layer 160, but not limited thereto. In some embodiments (fig. 5), the light-shielding layer 150 and/or the protective layer 160 are disposed, for example, adjacent to the adhesive layer 130. In some embodiments, the light-shielding layer 150 and/or the passivation layer 160 surround the light-emitting

diodes

120A, 120B and/or 120C, for example. In some embodiments, the light-shielding layer 150 and/or the protective layer 160 contact portions of the light-emitting

diodes

120A, 120B, and/or 120C. In some embodiments (not shown), the positions of the light-shielding layer 150 and the passivation layer 160 can be interchanged. In some embodiments, the light-shielding layer 150 and/or the protection layer 160 may be selectively disposed or removed. In some embodiments (not shown), the passivation layer 160 may be, for example, adjacent to (or surrounding) the

leds

120A, 120B, and/or 120C, and the light-shielding layer 150 may, for example, surround the passivation layer 160. In other words, the

light emitting diodes

120A, 120B and/or 120C are sequentially surrounded by the passivation layer 160 and the light shielding layer 150 in the normal direction Z of the transparent substrate 110, but not limited thereto. Conversely, in some embodiments (not shown), the light-shielding layer 150 may be, for example, adjacent to (or surrounding) the light-emitting

diodes

120A, 120B and/or 120C, and the protection layer 160 may, for example, surround the light-shielding layer 150. In other words, the

light emitting diodes

120A, 120B and/or 120C are sequentially surrounded by the light shielding layer 150 and the protection layer 160 in the normal direction Z of the transparent substrate 110, but not limited thereto.

In some embodiments, the light shielding layer 150 may be formed by a physical vapor deposition process, a chemical vapor deposition process, or other processes, but is not limited thereto.

In some embodiments, the light shielding layer 150 may include an absorbing material or a reflecting material. In some embodiments, the light-shielding layer 150 may include a black photoresist, a black printing ink, a black resin, a white ink, a composite material (e.g., a composite material with a reflective material or an absorbing material coated on the periphery), other suitable materials, or a combination thereof, but is not limited thereto. In some embodiments, the material of the light shielding layer 150 may include a metal, a metal alloy, a metal oxide, other suitable materials, or a combination thereof, but is not limited thereto. The light-shielding layer 150 can be used to absorb or shield the ambient light, for example, to reduce the influence of the ambient light reflected by the photodiode package 10E on the quality of the electronic device. In addition, the light-shielding layer 150 is used to increase the dark state of the non-light-emitting region and increase the contrast of the electronic device. The non-light-emitting area is, for example, an area that does not need to emit light or display a picture. Alternatively, the light-shielding layer 150 may be used to reduce the interference between the lights emitted from the adjacent light-emitting diodes.

In some embodiments, the protection layer 160 may comprise an organic insulating material, an inorganic insulating material, other suitable materials, or a combination thereof, but is not limited thereto. In some embodiments, the protection layer 160 may include a material having water and oxygen blocking properties and buffering properties, but is not limited thereto. In some embodiments, the protection layer 160 may include photoresist, optical glue, polymer, other suitable materials, or combinations thereof, but is not limited thereto. By disposing the passivation layer 160, the lifetime of the light emitting diode can be increased.

In some embodiments (not shown), the transparent substrate 110 may have a surface S₃Surface S₃Is a surface of the transparent substrate 110 away from the led 120A, the led 120B and/or the led 120C. Surface S₃May for example be a rough surface (i.e. surface S)₃E.g., having a plurality of grooves), thereby reducing the exposure of ambient light to the surface S₃But is reflected.

Referring to fig. 6, a cross-sectional view of a light emitting diode package 10F is shown according to some embodiments of the invention. The led package 10F is similar to the led package 10A, one of which differs in that: the led package 10F further includes an epitaxial substrate 126A and/or an epitaxial substrate 126B. In some embodiments, the epitaxial substrate 126A and the epitaxial substrate 126B are used as epitaxial substrates for disposing or forming the

light emitting diodes

120A and 120B, respectively, for example, but not limited thereto.

In some embodiments (fig. 6), multiple quantum well structure 122A has a thickness T, for example₁The multiple quantum well structure 122B has a thickness T₂The multiple quantum well structure 122C has a thickness T₃. Thickness T₁Thickness T₂And thickness T₃It is noted that the thickness of the above or later mentioned structures, layers or elements may be measured, for example, by a Scanning Electron Microscope (SEM), for example, by taking SEM images of cross-sectional sections of the structures, layers or elements and obtaining the maximum thickness of the structures, layers or elements in the SEM images as defined above, or by other suitable measurement methods, but not limited thereto. For example, the layer a (the object to be measured) is located between the layer B and the layer C, and thus, the layer a, at least a part of the layer B and at least a part of the layer C are displayed in the SEM image, and the thickness of the layer a is obtained from the maximum thickness of the layer a measured in the SEM image, but is not limited thereto.

In some embodiments, the thickness T₁Thickness T₂And/or thickness T₃May be the same as or different from each other. In some embodiments (e.g., FIG. 6), the thickness T₃May for example be larger than the thickness T₂(and/or thickness T)₁). In some embodiments (e.g., fig. 6), the thickness of the epitaxial substrate 126A and the epitaxial substrate 126B may be the same or different. The thickness of the epitaxial substrate 126A (or the epitaxial substrate 126B) may be designed according to the thickness difference between the multiple quantum well structure 122A (or the multiple quantum well structure 122B) and the multiple quantum well structures of other light emitting diodes.The epitaxial substrate 126A (or the epitaxial substrate 126B) may be used, for example, as a thickness offset layer to reduce the thickness difference between different multiple quantum well structures, but is not limited thereto. In detail, in different light emitting diodes, the thicknesses of the light emitting layer (not shown), the semiconductor layer (not shown) or other layers in different multiple quantum well structures may be different, so that the thickness difference between different multiple quantum well structures is reduced through the epitaxial substrate 126A (or the epitaxial substrate 126B), and the conductive pads 124 of the light emitting diode 120A, the light emitting diode 120B and/or the light emitting diode 120C in the light emitting diode package 10A are substantially located on the same plane (i.e., substantially aligned on the plane in the second direction X-the first direction Y), thereby improving the yield of the light emitting diode package 10A disposed on the circuit substrate 210 (refer to fig. 9).

In some embodiments (see fig. 6), the led package 10F may further include a thickness adjustment layer 170, wherein the thickness adjustment layer 170 is disposed between the multiple quantum well structure 122C and the adhesion layer 130, for example. In some embodiments, since the epitaxial substrate of the light emitting diode 120C (emitting red light) may include an opaque material (such as, but not limited to, GaAs), the light emitting diode 120C, for example, does not use its epitaxial substrate as a compensating layer with a thickness as described above. In some embodiments, the led 120C further comprises a thickness adjustment layer 170, for example, to compensate for the thickness difference with the multiple quantum well structures (including the light emitting layer, the semiconductor layer or other layers) in other leds, or to reduce the thickness difference between different multiple quantum well structures. In some embodiments, the thickness adjustment layer 170 may comprise a transparent material. In some embodiments, the thickness adjustment layer 170 may comprise glass, plastic, ceramic, polymer (including epoxy), sapphire, inorganic insulating layer, organic insulating layer, other suitable materials, or combinations thereof, but is not limited thereto.

Referring to fig. 7, a top view of a light emitting unit is shown, according to some embodiments of the present invention. In some embodiments, the light emitting unit U1 includes, for example, but not limited to, a light emitting diode 120A, a light emitting diode 120B, and a light emitting diode 120C. The

light emitting diodes

120A, 120B and 120C in the light emitting unit U1 may be arranged along the first direction Y, for example. In some embodiments (see fig. 7), the light-emitting unit U2 includes, for example, two light-emitting diodes 120A, two light-emitting diodes 120B, and two light-emitting diodes 120C, which may be arranged along the first direction Y, for example. For example, the light emitting unit U2 includes two light emitting

diodes

120A and 120B separated by a light emitting diode 120B and a light emitting diode 120C, and the six light emitting diodes are arranged along the first direction Y, but the invention is not limited thereto. In some embodiments, the light-emitting unit U3 includes two light-emitting diodes 120A, two light-emitting diodes 120B, and two light-emitting diodes 120C, for example, but not limited to, the light-emitting diodes in the light-emitting unit U3 may be arranged in a 2 × 3 array. In other embodiments, the light emitting diodes in the light emitting unit may be, for example, an m x m array, where m is greater than 2. In other embodiments, the light emitting cells can be an m × n array, where m and n are greater than or equal to 2, m and n are positive integers, and m ≠ n. In other embodiments, the outline of the light emitting units in the normal direction Z of the transparent substrate 110 (i.e. in the direction of looking down on the electronic device) is, for example, but not limited to, a rectangle, a diamond, a polygon, an arc, other suitable shapes, or a combination thereof. In some embodiments (not shown), the number of the light emitting units U2 including the

light emitting diodes

120A, 120B and/or 120C may be the same or different. For example, the light emitting unit U2 may include two light emitting diodes 120A, one light emitting diode 120B and one light emitting diode 120C, but is not limited thereto.

Referring to fig. 8, a top view of a light emitting unit is shown, according to some embodiments of the present invention. In some embodiments (see fig. 8), the

leds

120A, 120B, and 120C of the light-emitting unit U4 are not arranged along the same direction, for example. For example, the

leds

120A and 120B in the light-emitting unit U4 may be alternately arranged along the second direction X, for example, the leds 120C are disposed adjacent to the

leds

120A and 120B, but they are located on different rows from the

leds

120A and 120B, and the leds 120C are disposed offset from the

leds

120A and 120B, but not limited thereto. In other words, in some embodiments (see fig. 8), the leds 120C are not aligned with the leds 120A and/or the leds 120B in the first direction Y. The second direction X is different from the first direction Y. In some embodiments, the angle between the second direction X and the first direction Y may, for example, be in the range of 45 ° to 90 ° (45 ° ≦ angle ≦ 90 °). In some embodiments (see fig. 8), the connection line between the centers of the

leds

120C, 120A and 120B may be, for example, a triangle, but is not limited thereto.

In other embodiments, the arrangement of the light emitting diodes in the light emitting unit can be adjusted according to the requirement.

In some embodiments, the led packages 10A to 10F may include at least one light emitting unit, such as, but not limited to, the light emitting unit U1, the light emitting unit U2, the light emitting unit U3, the light emitting unit U4, light emitting units with other led arrangements, or combinations thereof.

Referring to fig. 9, a cross-sectional view of an electronic device 20A is shown, according to some embodiments of the invention. It is noted that the electronic device 20A and other embodiments of the electronic device shown in the present disclosure may omit some elements for brevity, additional elements may be added to the electronic device 20A of some embodiments of the present disclosure, and some elements described in some embodiments below may be optionally replaced or omitted.

In some embodiments, the electronic device 20A may include a circuit substrate 210, and the at least one light emitting diode package 10A is disposed on the circuit substrate 210. The circuit substrate 210 may include various electronic components or circuits, such as but not limited to a thin film transistor (a switch transistor, a driving transistor, a reset transistor, or other thin film transistors), a capacitor, depending on the application of the electronic device 20A.

In some embodiments, the circuit substrate 210 may include a rigid substrate, a flexible substrate, or a combination thereof. The material of the circuit substrate 210 may include, but is not limited to, glass, sapphire, ceramic, quartz, plastic, silicon material, other suitable substrates, or a combination thereof. In some embodiments, the material of the plastic substrate may include, but is not limited to, Polyimide (PI), polyethylene terephthalate (PET), Polycarbonate (PC), Polyethersulfone (PES), polybutylene terephthalate (PBT), polyethylene naphthalate (PEN), Polyarylate (PAR), other suitable materials, or a combination thereof.

In some embodiments (not shown), the electronic device of the invention may further include a liquid crystal layer, a light guide plate, a reflective layer, a diffuser plate and/or other elements, but is not limited thereto. At this time, the led package of the present invention can be used as a light source of a backlight module.

Referring to fig. 10, a cross-sectional schematic view of an electronic device 20B is shown, according to some embodiments of the invention. The electronic device 20B is similar to the electronic device 20A, one of which differs in that: the electronic device 20B may further include a protection layer 220 and/or a light-shielding layer 230. In some embodiments, the protection layer 220 is disposed between the circuit substrate 210 and the transparent substrate 110, for example. In some embodiments, the protective layer 220 is, for example, adjacent to or surrounding the light emitting diode package 10A. The material or function of the protection layer 220 is as the protection layer 160, and will not be described again.

In some embodiments (see fig. 10), the light-shielding layer 230 is disposed on the passivation layer 220, for example, and the light-shielding layer 230 is patterned, for example. In other words, the light-shielding layer 230 has a plurality of openings, for example, and the plurality of openings of the light-shielding layer 230 substantially overlap the light-emitting diode packages 10A respectively in the normal direction Z of the transparent substrate 110. The material, function or arrangement of the light-shielding layer 230 is as the light-shielding layer 150, and will not be described again.

In addition, the electronic device 20A or the electronic device 20B may optionally include an anti-reflection layer (not shown, refer to the anti-reflection layer 140), and the description thereof is not repeated.

Referring to fig. 11A-11E, cross-sectional views of a method of manufacturing an electronic device 20C at various stages are shown, according to some embodiments of the present invention. It is noted that additional steps may be added as desired in some embodiments of the invention, and steps described in some embodiments of the invention as described below may optionally be replaced or omitted.

As shown in fig. 11A, a transparent substrate 110 is provided, and an adhesive layer 130 is disposed or coated on the transparent substrate 110. In some embodiments, the adhesive layer 130 may be disposed or coated on the transparent substrate 110, for example, continuously or discontinuously. In some embodiments, the adhesive layer 130 may be disposed on at least a portion of the transparent substrate 110, for example. In some embodiments, the adhesive layer 130 may have a patterning, for example.

Next, as shown in fig. 11B, a plurality of

light emitting diodes

120A, 120B and 120C are disposed on the transparent substrate 110, and the plurality of light emitting diodes are fixed on the transparent substrate 110 through the adhesive layer 130. In addition, the

light emitting diodes

120A, 120B and 120C respectively include two conductive pads 124. The conductive pad 124 is located on the surface S2 of the led, for example. Subsequently, a plurality of solder layers 180 are disposed corresponding to the conductive pads 124, respectively, and the solder layers 180 are electrically connected to the corresponding conductive pads 124, respectively. In some embodiments, the material of the solder layer 180 may include tin (Sn), gold (Au), copper (Cu), indium (In), other suitable conductive materials, or a combination thereof, but is not limited thereto. In some embodiments, the conductive pad 124 and/or the solder layer 180 may be formed by thermal evaporation (thermal evaporation), electroplating, electro-plating, or other suitable methods, but is not limited thereto.

As shown in fig. 11C, at least one protection layer 160 is disposed on the adhesive layer 130, and the protection layer 160 may be disposed adjacent to or around the plurality of

light emitting diodes

120A, 120B, and 120C, for example. In some embodiments, the protection layer 160 may be formed by a Chemical Vapor Deposition (CVD) process, a Physical Vapor Deposition (PVD) process, other suitable processes, or a combination thereof, but is not limited thereto.

Next, as shown in fig. 11D, a cutting process is performed on the transparent substrate 110 to form a plurality of light emitting diode packages 10A separated from each other. In some embodiments (fig. 11D), the portion of the transparent substrate 110 in the cut led package 10A may have an edge E1, for example, wherein the distance D1 between the led and the edge E1 is less than or equal to the distance D2 between two adjacent leds, for example, but not limited thereto. The distance D1 is, for example, a minimum distance between one of the leds closest to the edge E1 and the edge E1 in the first direction y, and the distance D2 is, for example, a minimum distance between two adjacent leds in the first direction y. In other embodiments, the relationship between the distance D1 and the distance D2 may be adjusted as desired.

Next, as shown in fig. 11E, the soldering layers 180 are aligned with the conductive pads 190 on the circuit substrate 210 (i.e., substantially aligned with or overlapped with the normal direction Z of the transparent substrate 110), respectively, and at least one light emitting diode package 10A is disposed or fixed on the circuit substrate 210 by soldering (e.g., including reflow soldering or hot pressing) or other suitable processes to form the electronic device 20C. The material of the conductive pad 190 may include, but is not limited to, metal (e.g., gold, nickel, copper, and silver, or other suitable metals) or other suitable materials. In this embodiment, the transparent substrate 110 is disposed adjacent to the surface S1 of the light emitting diode 120A, the light emitting diode 120B and/or the light emitting diode 120C and away from the circuit substrate 210. It should be noted that, in the electronic device 20C (as shown in fig. 11E), the multiple quantum well structure 122A in the light emitting diode 120A may be disposed between the transparent substrate 110 and the conductive pad 124 of the light emitting diode 120A, the multiple quantum well structure 122B in the light emitting diode 120B may be disposed between the transparent substrate 110 and the conductive pad 124 of the light emitting diode 120B, and the multiple quantum well structure 122C in the light emitting diode 120C may be disposed between the transparent substrate 110 and the conductive pad 124 of the light emitting diode 120C.

Referring to fig. 12A-12D, cross-sectional views of a method of manufacturing an electronic device 20D at various stages are shown, according to some embodiments of the present disclosure. It is noted that additional steps may be added to some embodiments of the invention, and steps described in some embodiments of the invention as described below may optionally be replaced or omitted. In some embodiments (fig. 12A), the

light emitting diodes

120A, 120B, and 120C may be disposed on the transparent substrate 110, the surfaces S2 of the

light emitting diodes

120A, 120B, and 120C may be adjacent to the transparent substrate 110, the light emitting diodes 120A are disposed on the transparent substrate 110 and the multiple quantum well structure 122A, the light emitting diodes 120B are disposed on the transparent substrate 110 and the multiple quantum well structure 122B, and the conductive pads 124 of the light emitting diodes 120C are disposed between the transparent substrate 110 and the multiple

quantum well structures

122A, 122B, and/or 122C, for example. In some embodiments (fig. 12A), the solder layer 240 may be disposed on the transparent substrate 110 between the

light emitting diodes

120A, 120B and 120C, and the conductive pads 124 of the

light emitting diodes

120A, 120B and/or 120C may be respectively soldered (e.g., including reflow soldering or thermocompression bonding) to the transparent substrate 110 through the solder layer 240, but not limited thereto.

In some embodiments (fig. 12A), the transparent substrate 110 includes a plurality of openings O and a plurality of conductive elements 250 respectively located in the openings O. In detail, in some embodiments (fig. 12A), a plurality of openings O (i.e., through holes) may be formed in the transparent substrate 110 by a photolithography process and/or an etching process, for example, the conductive elements 250 are located in the openings O, and a portion of the conductive elements 250 is, for example, the element that is more in contact with the lower surface DS of the transparent substrate 110. In some embodiments, the solder layer 240 is heated to fill the opening O to form the conductive element 250, but not limited thereto. In some embodiments, the material of the conductive element 250 is the same as or different from the solder layer 240, for example. In some embodiments, the conductive element 250 is used to connect the light emitting diode with a device (e.g., the circuit substrate 210) adjacent to the lower surface DS of the transparent substrate 110, for example, as will be described later in detail. The conductive element 250 may comprise a metal, an alloy, a transparent conductive material, other suitable materials, or a combination thereof, but is not limited thereto.

Next, as shown in fig. 12B, a protection layer 260 is disposed or formed on the transparent substrate 110. The passivation layer 260 covers the

light emitting diodes

120A, 120B and/or 120C. In some embodiments, the protective layer 260 may include an organic insulating layer, an inorganic insulating layer, other suitable materials, or a combination thereof. In some embodiments, the protection layer 260 may include water and oxygen blocking properties, buffering properties, but is not limited thereto. In some embodiments, the protective layer 260 may include a single layer material, a multi-layer material, or a composite layer material, but is not limited thereto. In some embodiments, the protection layer 260 includes, for example, but not limited to, a photoresist, an adhesive material (e.g., a thermosetting epoxy or a photo-curing adhesive material), other suitable materials, or a combination thereof. In some embodiments (not shown), the passivation layer 260 may have an arcuate edge or an irregular outer edge.

Next, as shown in fig. 12C, a cutting process is performed on the transparent substrate 110 and the protection layer 260 to form a plurality of light emitting units U5 separated from each other. Subsequently, a circuit substrate 210 is provided, and the conductive pad 212 and/or the solder layer 214 are disposed on the circuit substrate 210. In some embodiments, the conductive pad 212 is disposed between the circuit substrate 210 and the soldering layer 214, but is not limited thereto. In some embodiments, the conductive pad 212 may include a metal material, such as, but not limited to, copper (Cu), nickel (Ni), gold (Au), titanium (Ti), aluminum (Al), chromium (Cr), palladium (Pt), silver (Ag), aluminum (Al), other metal materials, alloys thereof, or combinations thereof. The solder layer 214 may include tin (Sn), indium (In), gold (Au), copper (Cu), silver (Ag), other suitable materials, or combinations thereof, but is not limited thereto.

As shown in fig. 12D, the light emitting diodes (e.g., 120A, 120B, and 120C) on the transparent substrate 110 can be electrically connected to the circuit substrate 210 through the solder layer 240, the conductive element 250, the soldering layer 214, and/or the conductive pad 212 by a heating melting process or other processes to form the electronic device 20D.

Referring to fig. 13, an enlarged view of a portion of an electronic device is shown to illustrate a detailed stack of the

conductive pads

124 and 190 of the electronic device according to some embodiments of the present invention (e.g., refer to fig. 11E). As shown in fig. 13, the conductive pad 124 can include a conductive layer 1241 (e.g., an ohmic contact layer), an attachment layer 1242, and a barrier layer 1243. The conductive layer 1241 may be disposed or formed on the multiple quantum well structure 122A of the light emitting diode, for example. In some embodiments, the conductive layer 1241 may include copper, aluminum, silver, titanium, molybdenum, other suitable materials, or combinations thereof, but is not limited thereto. An attachment layer 1242 may be disposed on a side of the conductive layer 1241 distal from the multiple quantum well structure 122A. In some embodiments, the attachment layer 1242 may include copper, aluminum, titanium, chromium, other suitable materials, or combinations thereof, but is not limited thereto. Barrier layer 1243 is disposed on adhesion layer 1242. In some embodiments, barrier layer 1243 can include nickel, platinum, palladium, gold, molybdenum, tungsten, titanium, other suitable materials, alloys thereof, or combinations thereof, but is not limited thereto. In some embodiments, during the bonding of the solder layer 180 and the conductive pad 124 through a heating and melting process, for example, an intermetallic layer 1244 may be formed, and the intermetallic layer 1244 may be located between the solder layer 180 and the conductive pad 124, but is not limited thereto. The material of the intermetallic layer 1244 may include material in the solder layer 180 and/or material in the conductive pad 124. In some embodiments, the boundary between the intermetallic layer 1244 and the conductive pad 124 may not be apparent, or the boundary between the intermetallic layer 1244 and the solder layer 180 may not be apparent.

As shown in fig. 13, the conductive pad 190 may include a conductive layer 196 and a barrier layer 194 sequentially disposed on a circuit substrate 210. In some embodiments, barrier layer 194 may comprise nickel, platinum, palladium, gold, molybdenum, tungsten, titanium, other suitable materials, alloys thereof, or combinations thereof, but is not limited thereto. During the process of bonding the solder layer 180 and the conductive pad 190 through a heating and melting process, for example, an intermetallic compound layer 192 may be generated, and the intermetallic compound layer 192 may be located between the solder layer 180 and the conductive pad 190, but is not limited thereto. The material of the intermetallic layer 192 may include material in the solder layer 180 and/or material in the conductive pad 190. In some embodiments, the boundary between the intermetallic layer 192 and the conductive pad 190 may not be apparent, or the boundary between the intermetallic layer 192 and the solder layer 180 may not be apparent. In some embodiments, the intermetallic layer 192 may include, but is not limited to, copper, aluminum, silver, titanium, molybdenum, other suitable materials, alloys thereof, or combinations thereof.

In some embodiments, the intermetallic layer 1244 may have a thickness H1, the intermetallic layer 192 may have a thickness H2, and the thickness H1 may be the same or different than the thickness H2. For example, if the conductive pad 124 and the conductive pad 190 are heated (e.g., melted) for the same time, the thickness H1 may be substantially equal to the thickness H2. The thicknesses H1 and H2 may be defined as the maximum thicknesses of the intermetallic layer 1244 and the intermetallic layer 192, respectively, in the normal direction Z of the transparent substrate 110 at any cross section, and the thicknesses may be measured, for example, by a scanning electron microscope as described above.

In some embodiments, the solder material 180 may be disposed on the conductive pad 124 (e.g., the barrier layer 1243) by a heating process (e.g., thermal evaporation), and then bonded to the conductive pad 190 on the circuit substrate 210 by a heating and melting process, wherein the thickness H1 may be greater than the thickness H2, for example, but not limited thereto. In some embodiments, the thickness H1 may be smaller than the thickness H2, for example, but not limited to, when the solder material 180 is first disposed on the conductive pad 190 by a heating process (e.g., thermal evaporation), and then the conductive pad 190 and the solder material 180 are bonded to the conductive pad 124 by a heating and melting process.

Although the embodiments of the present invention and their advantages have been described above, it should be understood that various changes, substitutions and alterations can be made herein by those skilled in the art without departing from the spirit and scope of the invention. Moreover, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, composition of matter, means, methods and steps described in the specification, but rather, the present application is to be accorded the widest scope consistent with the principles and novel features disclosed herein. Accordingly, the scope of the present application includes the processes, machines, manufacture, compositions of matter, means, methods, and steps described above. In addition, each claim constitutes a separate embodiment, and the scope of protection of the present invention also includes combinations of the respective claims and embodiments. Features of the various embodiments may be combined and matched as desired, without departing from the spirit or ambit of the invention.

Although the present invention has been described with respect to the preferred embodiments, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims

1. A light emitting diode package, comprising:

a transparent substrate;

a first light emitting diode disposed on the transparent substrate, the first light emitting diode having a first multiple quantum well structure;

a second light emitting diode disposed on the transparent substrate, the second light emitting diode having a second multiple quantum well structure,

wherein the first multiple quantum well structure and the second multiple quantum well structure are configured to emit light of different wavelengths,

wherein the transparent substrate is an epitaxial substrate for forming the first light emitting diode.

2. The light emitting diode package of claim 1, wherein at least one of the first light emitting diode and the second light emitting diode is bonded to the transparent substrate.

3. The light emitting diode package of claim 1, further comprising:

and the thickness adjusting layer is arranged between the transparent substrate and the second light-emitting diode.

4. The light emitting diode package of claim 1, further comprising:

an epitaxial substrate for forming the first LED and disposed between the transparent substrate and the first LED.

5. The light emitting diode package of claim 4, wherein the first multiple quantum well structure emits a blue light or a green light.

6. The light emitting diode package of claim 5, wherein the second multiple quantum well structure emits a red light.

7. The light emitting diode package of claim 1, further comprising:

an anti-reflection layer is arranged on the transparent substrate.

8. The light emitting diode package of claim 1, further comprising:

and the anti-reflection layer is arranged between the transparent substrate and the first light-emitting diode and between the transparent substrate and the second light-emitting diode.

9. The light emitting diode package of claim 1, wherein the transparent substrate comprises a plurality of openings and a plurality of conductive elements respectively disposed in the plurality of openings.

10. An electronic device, comprising:

a circuit substrate; and

a light emitting diode package disposed on the circuit substrate, comprising:

a transparent substrate;