CN111564546A - LED package, manufacturing method thereof and LED panel with same - Google Patents
LED package, manufacturing method thereof and LED panel with same Download PDFInfo
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- CN111564546A CN111564546A CN201910113049.0A CN201910113049A CN111564546A CN 111564546 A CN111564546 A CN 111564546A CN 201910113049 A CN201910113049 A CN 201910113049A CN 111564546 A CN111564546 A CN 111564546A
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Abstract
The invention discloses an LED package, a manufacturing method thereof and an LED panel with the same. An LED package according to an embodiment of the present invention can include: a driver IC of silicon material; a positive bias, a negative bias, a positive terminal, a negative terminal, a signal input terminal, and a signal output terminal formed at the driver IC; a Zener diode formed of the silicon material and disposed apart from the driver IC by an insulating layer; and an LED chip mounted on the Zener diode and electrically connected with the positive bias and the negative bias.
Description
Technical Field
The present invention relates to an LED package, a method of manufacturing the same, and an LED panel having the same, and more particularly, to an LED package having improved stability in operation, a method of manufacturing the same, and an LED panel having the same.
Background
An LED (light emitting diode) is an electroluminescence (electroluminescence) device that converts an electric signal into light having a specific wavelength band by using the characteristics of a compound semiconductor. The LED injects minority carriers (electrons or holes) using a p-n junction structure of a semiconductor and emits light by recombination thereof.
When a forward voltage is applied, if electrons (electrons) in the n layer are combined with holes (holes) in the p layer, energy corresponding to the energy gap of a conduction band (n) layer and a valence band (p) layer is emitted, and the energy emitted in the form of light is emitted from the LED.
The frequency of the electromagnetic radiation that can be generated by the compound semiconductor is influenced by the band gap function of the compound. The smaller the bandgap, the lower the energy and longer the wavelength of the generated photon, and the larger the bandgap, the higher the energy and shorter the wavelength of the generated photon.
In order to generate photons of ultraviolet, blue, or green wavelengths in a spectrum, a compound semiconductor having a large band gap is required, and a compound semiconductor of gallium nitride (GaN) series conforms to the compound semiconductor having a large band gap2O3) A gallium nitride semiconductor layer is formed on a substrate (wafer) to reduce lattice defects (lattice defects).
In order to generate photons of red wavelength in the spectrum, a compound semiconductor having a smaller band gap is required, and devices of the aluminum gallium arsenide (AlGaAs) series conform to the compound semiconductor having the smaller band gap. In this case, aluminum gallium arsenide (AlGaAs) uses a gallium arsenide (GaAs) substrate (wafer), thereby generating much more lattice defects (crystal lattice defects) of a semiconductor than a device made of a single substance such as silicon (Si).
In addition, a lattice constant (lattice constant) different between sapphire and gallium nitride and between gallium arsenide and aluminum gallium arsenide becomes a main factor for generation of a reverse leakage current or a reverse bias (reverse bias) due to a semiconductor lattice defect.
A compound semiconductor used for another LED chip cannot convert all of the injected current into light (light) due to the limit of physical properties, i.e., differential quantum efficiency, and has a problem that 50% of the injected energy is generated as joule heat at present. In the case where heat generated when a device such as an LED package is operated is not smoothly dissipated, the device is broken down by a leakage current, thereby causing a defect in a unit pixel or the entire LED panel.
In the case where heat generated at the time of driving the LED chip cannot be smoothly dissipated, device breakdown due to leakage current and system defects caused thereby are accelerated. In this case, the LED package is provided with a zener diode (zenerdiode), thereby not only functioning as a heat sink but also eliminating reverse leakage current and coping with fundamental lattice defect factors.
In particular, in the case of an LED package, heat is released by a surge (surge) voltage or electrostatic discharge (ESD), and if the temperature of the LED package is increased by the continuous heat release, not only performance is deteriorated, but also there is a risk of explosion, and the like, which is fatal to durability. In order to prevent such damage, capacitors have been provided externally in the past, but it is necessary to have an area occupied by each capacitor, and it is difficult to realize a miniaturized and integrated LED package.
Further, in order to provide the capacitor externally, a process of electrically connecting the external connection terminal or each internal connection terminal through another wire, wire bonding (wire bonding), or an exposed terminal of the substrate is further required, which is complicated and difficult to perform.
Documents of the prior art
Patent document
Korean granted patent publication No. 10-0730754 (2007, 06, 21).
Disclosure of Invention
Problems to be solved
An object of the present invention is to provide an LED package and an LED panel capable of reducing noise such as surge voltage, reverse bias (reverse bias) voltage, or electrostatic discharge (ESD).
Another object of the present invention is to provide an LED package and an LED panel that can ensure a certain degree of light transmittance.
Another object of the present invention is to provide an LED package and an LED panel with improved heat dissipation efficiency.
Means for solving the problems
In order to solve the above technical problems, the present invention provides an LED package.
An LED panel according to an embodiment of the present invention can include: a driver IC of silicon material; a positive bias, a negative bias, a positive terminal, a negative terminal, a signal input terminal, and a signal output terminal formed at the driver IC; a Zener diode formed of the silicon material and disposed apart from the driver IC by an insulating layer; and an LED chip mounted on the Zener diode and electrically connected with the positive bias and the negative bias.
According to an embodiment, the zener diode is a p-n junction structure, which can further include a zener diode p-layer and a zener diode n-layer and an active layer, and the LED chip is a p-n junction structure, which can further include an LED chip p-layer electrically connected with the zener diode n-layer and the positive bias and an LED chip n-layer electrically connected with the zener diode p-layer and the negative bias.
According to one embodiment, the zener diode can be separately provided independently from the driver IC.
An LED package according to another embodiment of the present invention can include: a driver IC made of a silicon material and formed with a Zener diode; positive bias, negative bias, positive terminal and negative terminal formed on the driver IC; an LED chip mounted on the Zener diode and electrically connected to the positive bias and the negative bias; a capacitor made of ferroelectric and formed by stacking the positive terminal, the negative terminal and a region therebetween; and positive and negative electrodes opposite to the positive and negative terminals and formed on the capacitor in a stacked manner.
According to one embodiment, the capacitor can be made of lead lanthanum zirconate titanate (PLZT), lead zirconate titanate (PZT), tantalum pentoxide (Ta)2O5) Or barium titanate (BaTiO)3) Any one ofAnd (4) preparing.
According to one embodiment, the capacitor can be formed on the driver IC by sputtering or Chemical Vapor Deposition (CVD).
According to one embodiment, the positive electrode and the negative electrode can be made of aluminum, silver or gold.
In order to solve the above technical problems, the present invention provides an LED panel.
An LED panel according to an embodiment of the present invention can include: a substrate made of any one of aluminum PCB, copper PCB, tempered glass, or polyethylene terephthalate (PET); an adhesive insulating layer provided on one surface of the substrate and made of any one of aluminum nitride, beryllium oxide, or aluminum oxide; a conductive layer which is provided on one surface of the adhesive insulating layer and in which a carbon graphite layer having a lattice shape with a thickness of 10 to 20 ㎛ is formed by stacking on one surface of a copper layer having a thickness of 10 to 30 ㎛; a solder electrode layer provided on one surface of the conductive layer, the solder electrode layer being formed by laminating a silver (Ag) layer having a thickness of 1 to 5 ㎛ on a surface of a nickel (Ni) layer having a thickness of 0.5 to 3 ㎛; and an LED package disposed on the upper surface of the solder electrode layer and on the bottom surface of a cavity formed in the LED package frame; and a reflective layer arranged on one surface of the solder electrode layer in parallel with the LED package and made of barium sulfate (BaSO)4) Or aluminum oxide (Al)2O3) And (4) preparing.
According to one embodiment, it is possible to further include a transparent cover disposed on an upper portion of the conductive layer and formed with an LED package receiving part receiving the LED package.
According to one embodiment, the transparent cover can comprise: a first cover provided to divide the LED package receiving parts from each other; and a second cover disposed in surface-to-surface contact with one surface of the first cover.
The first cover can be made of polyvinyl butyral (pvpyl).
According to one embodiment, the second cover may further include a diffusion layer formed at a surface corresponding to the LED package receiving part.
According to one embodiment, the transparent cover can be made of polyethylene terephthalate (PET) and bonded by thermal compression or coating with an adhesive transparent resin (transparent resin).
An LED panel according to another embodiment of the present invention can include: a substrate made of any one of aluminum PCB, copper PCB, tempered glass, or polyethylene terephthalate (PET), and having a plurality of LED parts and a peripheral part surrounding the LED parts; a transparent electrode layer which is provided on the peripheral portion on one surface of the substrate and on which a circuit pattern is formed; a conductive layer provided on the LED region on one surface of the substrate, the conductive layer having a lattice-shaped carbon graphite layer with a thickness of 10 to 20 ㎛ laminated on one surface of a copper layer with a thickness of 10 to 30 ㎛; and an LED package disposed on the upper surface of the conductive layer and on the bottom surface of the cavity formed in the LED package frame, the LED package being joined to the solder electrode layer disposed on the upper surface of the conductive layer by soldering.
According to one embodiment, the brazing electrode layer can be made of an alloy of at least one or two or more of titanium (Ti), platinum (Pt), gold (Au), chromium (Cr), nickel (Ni), silver (Ag).
In order to solve the above technical problems, the present invention provides a method for manufacturing an LED package.
A method of manufacturing an LED package according to an embodiment of the present invention can include: a step of forming a capacitor pattern by removing a capacitor region constituted by the positive terminal, the negative terminal, and a region therebetween after coating and curing a photosensitive substance on the driver IC embedded with the positive terminal and the negative terminal; a step of depositing a stacked capacitor layer including the capacitor region on the driver IC; a step of removing the capacitor pattern region by a peeling process; and a step of forming a positive electrode and a negative electrode by laminating at positions on the capacitor opposite to the positive terminal and the negative terminal.
According to one embodiment, in the step of depositing the capacitor layer to be stacked, the deposition substance may be formed of lead lanthanum zirconate titanate (PLZT), lead zirconate titanate (PZT), tantalum pentoxide (Ta)2O5) Or barium titanate (BaTiO)3) Any one of them.
Effects of the invention
According to the embodiment of the present invention, since the zener diode is integrally formed with the driver IC, noise such as surge voltage, reverse bias (reverse bias) voltage, or electrostatic discharge (ESD) applied to the device due to sudden inflow from the outside is absorbed, and thus, there is an advantage in that not only the operation performance of the LED package but also the operation performance of the LED panel is improved.
According to an embodiment of the present invention, a driver IC having a zener diode and a capacitor integrally formed has advantages of simplifying a mounting process and improving production efficiency.
According to an embodiment of the present invention, the zener diode of the same silicon material is formed on the driver IC, thereby improving heat dissipation performance by the silicon material having excellent thermal conductivity, and thus having an advantage of being able to secure operation stability at high temperature.
According to an embodiment of the present invention, a zener diode having a heat sink function is provided, so that a heat release problem can be solved without an additional structure, and a manufacturing cost can be reduced and a manufacturing process can be simplified, thereby having an advantage of being able to minimize a defective rate.
According to an embodiment of the present invention, a driver IC in which a zener diode and a capacitor are integrally mounted is provided, thereby having advantages of simplifying a structure of an LED package and making the LED package small and light.
According to an embodiment of the present invention, the capacitor is integrally stacked on the driver IC to integrate the LED package in the LED region, thereby improving transmittance, transparency, and visibility in the peripheral portion.
According to an embodiment of the present invention, the driver IC, the zener diode, and the capacitor are integrated, thereby relatively reducing the size of the LED packages constituting the unit pixel, increasing the number of LED packages mounted on the LED panel, and increasing the number of pixels constituted per unit area, thereby having an advantage of improving the resolution of the LED panel.
Drawings
Fig. 1 is a perspective view schematically showing an LED package according to an embodiment of the present invention.
Fig. 2 is a top view schematically showing an LED package according to an embodiment of the present invention.
Fig. 3 is a front view schematically showing the LED package of fig. 2.
Fig. 4 is a circuit diagram showing a wiring structure of a zener diode, an LED chip and a driver IC according to one embodiment of the present invention.
Fig. 5 is a perspective view schematically showing an LED package according to another embodiment of the present invention.
Fig. 6 is a perspective view schematically illustrating an LED package according to still another embodiment of the present invention.
Fig. 7 is a plan view schematically showing the LED package of fig. 6.
Fig. 8 is a front view schematically showing an LED panel according to an embodiment of the present invention.
Fig. 9 is a perspective view schematically showing a conductive layer according to an embodiment of the present invention.
Fig. 10 (a) to 10 (c) are front views schematically illustrating an LED panel according to an embodiment of the present invention.
Fig. 11 is a front view schematically showing an LED panel according to another embodiment of the present invention.
Fig. 12 is a front view schematically showing an LED panel according to another embodiment of the present invention.
Fig. 13 is a diagram schematically showing a step of forming an LED package according to an embodiment of the present invention.
Description of the symbols
1-LED panel, 10-LED package, 100-driver IC, 110-silicon chip, 120-positive bias, 130-negative bias, 140-positive terminal, 150-negative terminal, 160-signal input terminal, 170-signal output terminal, 200-zener diode, 201-first zener diode, 202-second zener diode, 203-third zener diode, 210-zener diode p-layer, 220-zener diode n-layer, 230-active layer, 240-zener diode p-electrode, 250-zener diode n-electrode, 300-LED chip, 301-red LED chip, 302-green LED chip, 303-blue LED chip, 310-LED chip p-layer, 320-LED chip n-layer, 330-LED chip bonding layer, 340-LED chip p-electrode, 350-LED chip n-electrode, 400-capacitor, 410-positive electrode, 420-negative electrode, 500-LED package frame, 510-positive terminal joint, 520-negative terminal tab, 530-signal input tab, 540-signal output tab, 550-heat sink, 560-LED package bonding layer, 571, 572, 573, 574-driver IC connection terminal, 581-lens, 20-conductive layer, 21-copper layer, 22-carbon graphite layer, 31-substrate, 32-adhesive insulating layer, 33-solder electrode layer, 34-reflective layer, 41-substrate, 42-transparent electrode layer, 43-solder electrode layer, 44-reflective layer, 45-heat sink, 50-transparent cover, 51-first cover, 51 a-LED package accommodating portion, 52-second cover, 52 a-scattering layer, 53-third cover, 53 a-LED package accommodating portion.
Detailed Description
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the technical idea of the present invention is not limited to the embodiments described herein but can be embodied in other ways. Rather, the embodiments described herein are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art.
In the present specification, when a component is referred to as being located on another component, it means that the component may be directly formed on the other component or that a third component may be interposed between the two components. In the drawings, the shapes and sizes are exaggerated for the purpose of effectively explaining the technical contents.
In the embodiments of the present specification, the terms first, second, third, and the like are used to describe various components, but the components are not limited to such terms. These terms are used only for distinguishing one constituent element from another constituent element. Therefore, when a first component is mentioned in one embodiment, a second component can be mentioned in another embodiment. The embodiments described and illustrated herein also include complementary embodiments thereof. In addition, "and/or" as used herein means to include at least one of the components listed in the front and rear.
In this specification, singular references include plural references unless the context clearly dictates otherwise. The terms "comprising" or "having" are intended to specify the presence of the features, numerals, steps, components, or combinations thereof described in the specification, and are not to be construed as excluding the presence or addition of one or more other features, numerals, steps, components, or combinations thereof. The term "connected" as used herein is intended to include both indirect connection of a plurality of components and direct connection of a plurality of components.
In the following description of the present invention, a detailed description of related known functions and configurations will be omitted when it is determined that there is a possibility that the gist of the present invention will be unnecessarily obscured.
Fig. 1 is a perspective view schematically showing an LED package 10 according to an embodiment of the present invention, fig. 2 is a plan view schematically showing the LED package 10 according to an embodiment of the present invention, fig. 3 is a front view schematically showing the LED package 10 of fig. 2, fig. 4 is a circuit diagram schematically showing a wiring structure of a driver IC100 and a zener diode 200, an LED chip 300 according to an embodiment of the present invention, fig. 5 is a perspective view schematically showing the LED package 10 according to another embodiment of the present invention, fig. 6 is a perspective view schematically showing the LED package 10 according to still another embodiment of the present invention, and fig. 7 is a plan view schematically showing the LED package 10 of fig. 6.
Referring to fig. 1 to 7, an LED package 10 according to an embodiment of the present invention constitutes one unit pixel, i.e., pixel (pixel), when embodying image information.
The LED package 10 can include a driver IC100, a zener diode 200, and an LED chip 300. Further, the capacitor 400 and the LED package frame 500 can be further included.
Driver IC100
Referring back to fig. 1 to 7, the driver ic (one chip microprocessor) 100 functions to transmit and receive external power and signals and control them in order to adjust the amount of light, the operating time, and the like for each LED chip 300, which will be described below. The driver IC100 can be provided in the LED package 10 per pixel unit.
Driver IC100 can include a silicon chip 110, a positive bias (bias) 120, a negative bias 130, a positive terminal 140, and a negative terminal 150. Further, the signal input terminal 160 and the signal output terminal 170 can be further included.
The silicon chip 110 can be configured by integrating the driver IC100 and a zener diode 200 described below. The silicon chip 110 is made of a silicon material and can be fabricated as an n-type silicon substrate (wafer). The silicon chip 110 can include an insulating layer 111. The driver IC100 and the zener diode 200 constituting the silicon chip 110, including the silicon chip 110, can be formed by varying a concentration difference and by doping and deposition (deposition), diffusion (diffusion).
The insulating layer 111 is disposed between the driver IC100 and the zener diode 200 to separate the driver IC100 and the zener diode 200. The insulating layer 111 can be made of a silicon material.
A positive bias 120, a negative bias 130, a positive terminal 140, a negative terminal 150, a signal input terminal 160, and a signal output terminal 170 can be formed on the driver IC 100.
The positive bias 120 and the negative bias 130 are provided in pairs in each LED chip 301, 302, 303 to enable application of current to the respective LED chip 300. The positive terminal 140 and the negative terminal 150 may be terminals that supply power for driving of the driver IC 100. The signal input terminal 160 may be a terminal into which a signal for processing a signal from the outside and controlling each LED chip 301, 302, 303 enters. The signal output terminal 170 may be a terminal for transmitting an internal signal subjected to signal processing to an external control circuit.
Referring back to fig. 1 to 7, the zener diode 200 absorbs noise of a surge voltage, a reverse bias voltage, an electrostatic discharge (ESD), or the like, thereby protecting devices and circuits within the LED package 10 and functioning as a heat sink (heat sink) for dissipating heat that is inevitably generated in the operation of the LED package 10, which will be described below.
The zener diode 200 can be formed such that one surface thereof is exposed to the outside in a state of being accommodated in the silicon chip 110 including the driver IC 100. An LED chip 300 can be mounted on an exposed surface of the zener diode 200. More specifically, the zener diode 200 can be used as a submount for the red/green/ blue LED chips 301, 302, 303.
According to one embodiment, as shown in fig. 1 to 3, and 6 to 7, the zener diode 200 can be composed of the driver IC100 and one silicon piece. In this case, the zener diode 200 can be housed in the silicon chip 110 separately from the driver IC 100. The zener diode 200 can be disposed to interpose the insulating layer 111 therebetween to be spaced apart from the driver IC 100. The zener diode 200 is fabricated using an n-type silicon substrate (wafer) using a semiconductor process, and can be formed separately from the driver IC100 in a partial region.
According to another embodiment, as shown in fig. 5, the zener diode 200 may be another structure separated from the driver IC 100. In this case, an additional insulating layer is not required between the zener diode 200 and the driver IC 100.
Referring to fig. 2, the zener diode 200 can be provided separately from the red/green/ blue LED chips 301, 302, 303, respectively. That is, the zener diode 200 can include a first zener diode 201, a second zener diode 202, and a third zener diode 203.
Referring back to fig. 1, 4 to 6, the first zener diode 201 can be connected in reverse with the red LED chip 301. In addition, the second zener diode 202 can be connected in reverse to the green LED chip 302, and the third zener diode 203 can be connected in reverse to the blue LED chip 303.
The zener diode 200 can include a zener diode p-layer 210, a zener diode n-layer 220, and an active layer 230 of a p-n junction (junction) structure. In this case, the zener diode 200 can be formed by stacking and bonding the zener diode p layer 210, the zener diode n layer 220, and the active layer 230 in this order. Further, a zener diode p-electrode 240 and a zener diode n-electrode 250 can be further included.
The zener diode p-electrode 240 can be bonded to the upper exposed surface of the zener diode p-layer 210. The zener diode n-layer 220 can be electrically connected with the zener diode n-electrode 250 through the upper exposed surface of the bonded active layer 230.
The active layer 230 can be disposed in conjunction with the zener diode n-layer 220. The active layer 230 is formed by doping high concentration electrons (n)--) And can be formed. The active layer 230 can function as a diffusion channel of the zener diode n-layer 220. The active layer 230 is disposed between the zener diode n-layer 220 and a zener diode n-electrode 250, which will be described below, and can electrically connect the zener diode n-layer 220 and the zener diode n-electrode 250. That is, the zener diode n-layer 220 together with the active layer 230 can form one negative electrode.
According to one embodiment, the active layer 230 is formed to extend from one end portion joined with the zener diode n-layer 220 to be able to have a length in a horizontal direction. Further, the silicon wafer can be formed to extend from the other end portion of the horizontal layer to the upper exposed surface of the silicon chip 110 in the vertical direction.
The zener diode p-electrode 240 is disposed in contact with the zener diode p-layer 210, so that an electrode pad electrically connected by wire bonding can be provided.
The zener diode n-electrode 250 is disposed in contact with the active layer 230 so that an electrode pad for electrically connecting the zener diode n-layer 220 by wire bonding can be provided.
The zener diode 200 can be manufactured using a semiconductor process. The method of manufacturing the zener diode 200 is observed as follows.
An active layer 230 is formed at the bottom surface of the p-n junction layer and the zener diode n layer 220 where the zener diode p layer 210 and the zener diode n layer 220 are sequentially stacked. Thereafter, the first zener diode 201, the second zener diode 202, and the third zener diode 203 are separated by one etching (etching) process to be formed.
Referring back to fig. 1 to 7, the LED chip 300 is an LED light source of red, green, and blue, which can be provided in a device unit of the LED package 10. The LED chip 300 can be mounted on the zener diode 200. The LED chip 300 can be electrically connected to the driver IC100 and the zener diode 200 through the positive bias 120, the negative bias 130, and wire bonding.
The LED chip 300 is a p-n junction structure that can include an LED chip p-layer 310 and an LED chip n-layer 320. That is, the LED chip 300 can be stacked with the LED chip p layer 310 and the LED chip n layer 320 in this order. Further, the LED chip 300 can further include an LED chip p-electrode 340 and an LED chip n-electrode 350.
The LED chip 300 may be a red, green, and blue LED composed of 3 LEDs of red, green, and blue. That is, the LED chip 300 can include a red LED chip 301, a green LED chip 302, and a blue LED chip 303.
The LED chip 300 may be a vertical type LED chip or a horizontal type LED chip according to a combination manner of the p-layer 310 and the n-layer 320 of the LED chip. As shown in fig. 1 to 3, in the case where the red LED chip 301, the green LED chip 302, and the blue LED chip 303 are vertical, the LED chip p-layer 310 and the LED chip n-layer 320 may be formed on the substrate in a vertical bonding structure. As shown in fig. 6 and 7, in the case where the green LED chip 302 and the blue LED chip 303 are in the horizontal type, the LED chip p-layer 310 and the LED chip n-layer 320 can be formed on the substrate in the horizontal type bonding structure.
As shown in fig. 2 and 7, the red LED chip 301 can be mounted on a first zener diode 201 which will be described below. The green LED chip 302 can be mounted on a second zener diode 202, which will be described below, and the blue LED chip 303 can be mounted on a third zener diode 203, which will be described below.
The LED chip 300 can be bonded to the zener diode 200 by the LED chip bonding layer 330. The LED chip bonding layer 330 can be disposed between the LED chip 300 and the zener diode 200. The LED chip bonding layer 330 can be manufactured by various materials and processes according to various conditions such as the size, the assembly temperature, and the assembly accuracy of the LED chip 300. The LED chip bonding layer 330 can be made of an alloy or silver (Ag), wherein the alloy is made of tin (Sn), lead (Pb), silver (Ag), bismuth (Bi), copper (Cu), and the like. The LED chip bonding layer 330 can be formed by screen printing (screen printing), dispensing with a syringe (dispensing), or stamping (stamping) in a stacked manner. The LED chip bonding layer 330 can bond the LED chip 300 on the zener diode 200 by a solder preform (solder preform), a solder paste (paste), or the like.
In contrast, in the vertical LED chip 300 of fig. 1 to 3, which generates high heat during operation, it can be bonded by eutectic alloy (eutectic metal) or solder to emit heat to the outside in a short time. In this case, the eutectic alloy can be made of indium (In) or an alloy of gold (Au) and tin (Sn). In the case of being made of an alloy of gold (Au) and tin (Sn), it may have a content ratio of 80wt% Au to 20wt% Sn, 10wt% Au to 90wt% Sn. The solder can be made of any one of SnBiAg, PbSnAg, PbSn. The bonding layer 330 of the vertical LED chip 300 can be patterned by vacuum deposition such as electron beam (e-beam), sputtering (sputtering), or thermal deposition (thermal evaporation), or can be layered by dispensing.
Each LED chip 300 can be wire bonded for connection with an external circuit. At this time, the lead can be made of gold (Au), aluminum (Al), or copper (Cu).
The LED chip p-electrode 340 is disposed in contact with the LED chip p-layer 310, so that an electrode pad capable of electrical connection by wire bonding can be provided.
The LED chip n-electrode 340 is disposed in contact with the LED chip n-layer 320, so that an electrode pad capable of electrical connection by wire bonding can be provided.
The LED chip 300, the driver IC100, and the zener diode 200 are electrically connected to each other and driven, and the connection relationship thereof is explained as follows.
As shown in fig. 1, 5, and 6, the LED chip p-layer 310 can be electrically connected with the zener diode n-layer 220 and the forward bias 120. The LED chip p-layer 310 can be stacked to form an LED chip p-electrode 340, and the zener diode n-layer 220 can be stacked to form a zener diode n-electrode 250 via the active layer 230. At this time, the LED chip p-electrode 340 and the zener diode n-electrode 250 can be electrically connected to the forward bias 120 by wire bonding.
The LED chip n-layer 320 can be electrically connected with the zener diode p-layer 210 and the negative bias 130. The LED chip n-layer 320 can be disposed in contact with the zener diode p-layer 210. The zener diode p layer 210 can be stacked to form a zener diode p electrode 240. At this time, the LED chip n layer 320 can be electrically connected in contact with the zener diode p layer 210, and the zener diode p electrode 240 can be electrically connected to the negative bias 130 by wire bonding.
The respective red LED chips 301, green LED chips 302, and blue LED chips 303 transmit and receive signals with the positive bias 120 and the negative bias 130, respectively, and can be operated individually or simultaneously through signal processing of the driver IC 100. In addition, noise can be removed by the zener diode 200.
Referring back to fig. 1 to 3 and 5 to 7, the capacitor 400 absorbs noise such as surge voltage, reverse bias voltage, or electrostatic discharge (ESD), thereby playing a role of protecting devices and circuits within the driver IC 100. The capacitor 400 can be formed by stacking the positive and negative terminals 140 and 150 and the region therebetween. The capacitor 400 can be formed on the driver IC100 by a sputtering or Chemical Vapor Deposition (CVD) method. In this case, an insulating film (not shown) may be provided between the driver IC100 and the capacitor 400 to electrically insulate the two. Capacitor 400 is made of a ferroelectric, and can be made of lead lanthanum zirconate titanate (PLZT), lead zirconate titanate (PZT), tantalum pentoxide (Ta)2O5) Or barium titanate (BaTiO)3) Any one of them.
The positive electrode 410 and the negative electrode 420 can be formed at one end of the capacitor 400. The positive electrode 410 is opposed to the positive terminal 140, and the negative electrode 420 is opposed to the negative terminal 150, and can be formed on the capacitor 400 in a stacked manner. The positive and negative electrodes 410, 420 can electrically connect the positive and negative terminals 140, 150 with an external power source. The positive and negative electrodes 410, 420 may have positions and sizes corresponding to the positive and negative terminals 140, 150. The positive electrode 410 and the negative electrode 420 can be made of aluminum (Al), silver (Ag), or gold (Au).
Referring back to fig. 2, 3 and 7, the LED package frame 500 may be a housing having a cavity (cavity) formed therein to accommodate the LED package 10. The LED package frame 500 can include a positive terminal connector 510, a negative terminal connector 520, a signal input connector 530, and a signal output connector 540 for power and signal communication with the conductive layer 20, which will be described below. In addition, the LED package frame 500 may include a heat sink 550, an LED package bonding layer 560, driver IC connection terminals 571, 572, 573, 574, and a lens 581.
The positive terminal connector 510, the negative terminal connector 520, the signal input connector 530, and the signal output connector 540 function to supply an external power source to the LED package 10 including the driver IC100 and to transmit and receive signals. The positive and negative terminal connections 510 and 520 can be connected to positive and negative terminals 140 and 150 of a power source applied to operate the LED package 10. The signal input connector 530 and the signal output connector 540 can turn on/off the red, green, and blue LED chips 301, 302, 303 constituting the LED package 10 and adjust the amount of current flowing.
In the adjacent LED packages 10 constituting one column, the positive terminal connections 510 and the negative terminal connections 520 can be connected in units of the respective columns. At this time, the signal input connector 530 and the signal output connector 540 can be connected to at least a portion of the adjacent LED packages 10.
The heat sink (heat slug) 550 functions to discharge heat generated by the operation of the LED chip 300 to the outside. The heat sink 550 can be disposed at the bottom surface of the cavity. The heat sink 550 can be attached to the LED package frame 500 using a eutectic alloy pre-form, solder, or silver paste. The LED package 10, i.e., the driver IC100, can be mounted on the heat sink 550. The heat sink 550 can be made of silver (Ag) or copper (Cu) having excellent thermal conductivity.
The LED package bonding layer 560 can bond the LED package 10 to the heat sink 550. The LED package bonding layer 560 can be disposed between the LED package 10 and the heat sink 550. The LED package junction layer 560 can be formed by a pre-forming of eutectic alloy, solder or silver solder paste, or the like process.
The driver IC connection terminals 571, 572, 573, 574 can connect the terminals 140, 150, 160, 170 of the driver IC100 to the terminals of the LED package frame 500. The driver IC connection terminal 571 can connect the positive terminal 140 and the positive terminal connector 510, the driver IC connection terminal 572 can connect the negative terminal 150 and the negative terminal connector 520, the driver IC connection terminal 573 can connect the signal input terminal 160 and the signal input connector 530, and the driver IC connection terminal 574 can connect the signal output terminal 170 and the signal output connector 540.
Referring to fig. 3, the lens 581 can be mounted at the upper end of the cavity of the LED package frame 500. The lens 581 may have various shapes for adjusting an imaging distance, a beam emission angle, and intensity thereof, so as to obtain sharp and clear image information of high resolution quality. The lens 581 may be a hemispherical lens 581.
The hemispherical lens 581 of fig. 3 may be formed on the cavity in a sectional shape having a hemispherical surface. The hemispherical lens 581 can be made of a high-viscosity silicon material having a refractive index (reactive index) of 1.45 or more and a viscosity of 35,000cp or more, and can have a high polymerization force by its inherent surface tension. The hemispherical lens 581 can be applied to a large area display.
Fig. 8 is a front view schematically showing the LED panel 1 according to one embodiment of the present invention, fig. 9 is a perspective view schematically showing the conductive layer 20 according to one embodiment of the present invention, and fig. 10 (a) to 10 (c) are front views schematically showing the LED panel 1 according to one embodiment of the present invention.
An LED panel 1 according to an embodiment of the present invention will be explained.
The LED panel (panel) 1 can be used for a media facade (media facade) for outputting image information to an unspecified large number of objects, an electronic screen for a large-area display (display), a board (board) for signal processing/transmission or display, smart glasses (smart glass), and the like. The LED panel 1 can display desired pictures, characters, and the like by outputting RGB combined color signals for each unit pixel of the LED packages 10. In the LED panel 1, a plurality of LED packages 10 are arranged in a matrix (matrix) form, so that one large-area screen can be formed.
Referring to fig. 8 to 10, the LED panel 1 according to one embodiment can include an LED package 10 and a substrate 31, an adhesive insulating layer 32, a conductive layer 20, a solder electrode layer 33, and a reflective layer 34. Further, a transparent cover 50 can be further included.
The substrate 31 functions as a support substrate for mounting the LED package 10 and the like. The substrate 31 can be made of a material capable of releasing heat generated in the operation of the device to the outside or smoothly radiating heat in the form of radiation, wherein the substrate 31 can be made of any one of an aluminum PCB, a copper PCB, tempered glass, or polyethylene terephthalate (PET).
An adhesive insulating layer (isolation layer) 32 is a layer for adhering and insulating with the substrate 31. The adhesive insulating layer 32 can be formed on one surface of the substrate 31. The adhesive insulating layer 32 can be made of a material having excellent adhesive force, insulating property, and thermal conductivity. The adhesive insulating layer 32 may be formed of aluminum nitride (AlN), beryllium oxide (BeO), or aluminum oxide (Al)2O3) As a main component. The adhesive insulating layer 32 can penetrate the conductive layer 20, the solder electrode layer 33, and the solder from the space between the substrate 31 and the conductive layer 20The pads 34 are formed to extend to the bottom surface of the LED package 10.
Referring back to fig. 8 and 9, the conductive layer 20 functions as both an electrical wiring and a conductive heat dissipation support that supports the attached LED package 10 and discharges heat generated by the operation of the device to the outside. Such a conductive layer 20 can be formed on one surface of the adhesive insulating layer 32. The conductive layer 20 is made of a material excellent in thermal conductivity and electrical conductivity, and thus not only is excellent in thermal conductivity, but also can have an excellent heat dissipation effect. The conductive layer 20 can include a copper layer 21 and a carbon graphite (carbon graphite) layer 22. The conductive layer 20 can have a layered structure in which a lattice-shaped carbon graphite layer 22 is laminated on the surface of a copper layer 21. The conductive layer 20 can form a copper layer 21 and a carbon graphite layer 22 by a deposition process.
The carbon graphite layer 22 may have a lattice shape. The lattice shape is used to prevent a bending phenomenon due to a difference in thermal expansion coefficient (thermal expansion coefficient) between the substrate 31 and the adhesive insulating layer 32. The carbon graphite layer may have a thickness of 10 to 20 ㎛ a. Among them, it may preferably have a thickness of 20 ㎛.
The solder electrode layer 33 can be formed on one surface of the conductive layer 20. The solder electrode layer 33 serves to facilitate the soldering operation, support, and fixation of the solder pad, which will be described below. The brazing electrode layer 33 can be formed by laminating a silver (Ag) layer having excellent conductivity on the surface of the nickel (Ni) layer.
The nickel (Ni) layer may have a thickness of 0.5 to 3 ㎛. Among them, it may preferably have a thickness of 0.7 ㎛.
The silver (Ag) layer may have a thickness of 1 to 5 ㎛. Among them, it may preferably have a thickness of 0.7 ㎛.
The LED package 10 can be provided on one surface of the solder electrode layer 33. A plurality of LED packages 10 may be arranged on the solder electrode layer 33 at a predetermined interval. The LED package 10 can be provided per each unit pixel. The LED packages 10 are provided in varying numbers, which may be several hundreds to several tens of thousands, according to differences in pixels (pixels) constituting each unit area. In this case, the LED package 10 can be fixed by soldering.
The reflective layer 34 can be formed on one surface of the brazing electrode layer 33. The reflective layer 34 can be provided in a peripheral portion which is a region other than the LED portion where the LED package 10 is provided. The reflective layer 34 can be provided in a peripheral portion which is a region adjacent to the LED package 10. The reflective layer 34 functions as a protective layer (passivation layer) for reflecting light of the LED chip 300 that has emitted light in all directions and preventing the solder electrode layer 33 from peeling. The reflective layer 34 can be made of barium sulfate (BaSO)4) Or aluminum oxide (Al)2O3) And (4) preparing.
The LED site may be a position where the LED packages 10 are stacked. A plurality of such LED sites can be provided in rows and columns at arbitrary intervals. The peripheral portion may be a peripheral region surrounding each LED site. That is, the peripheral portion is a region through which the background transmits without providing the LED package 10.
Referring again to fig. 10 (a) to 10 (c), the transparent cover 50 forms an outer body to function as a seal for sealing the inside thereof, thereby preventing the device from being erroneously operated due to exposure to a humid or dusty outdoor environment. The transparent cover 50 may be provided to cover the LED package 10 on the conductive layer 20. The transparent cover 50 can form LED package accommodating portions 51a, 53 a. The LED package accommodating portions 51a and 53a can accommodate the LED package 10.
According to one embodiment, the transparent cover 50 of fig. 10 (a) and 10 (b) can include a first cover 51 and a second cover 52. According to another embodiment, the transparent cover 50 of fig. 10 (c) can include a third cover 53.
The first cover 51 may have a thickness corresponding to the height of the LED package 10 to accommodate the LED package 10. The first cover 51 functions as a spacer (spacer) having a certain thickness to prevent the LED package 10 from touching a second cover 52 which will be described below. The first cover 51 can divide the LED package receiving parts 51a into one another to be able to individually receive the LED packages 10. The first cover 51 may be a film of polyvinyl butyral (pvpyl) material. The first cover 51 can be formed with an adhesive (not shown) on both sides.
The LED package accommodating portion 51a can accommodate the LED package 10. The LED package receiving part 51a may have a shape corresponding to the LED package 10. In addition, the LED package receiving part 51a may have a height and a width corresponding to the LED package 10.
The second cover 52 functions to protect the LED package 10, the conductive layer 20, and the like from the outside. The second cover 52 may be attached to one surface of the first cover 51 in a surface contact manner. The second cover 52 can seal the LED package accommodating part 51a to isolate the outside from the LED package 10 in the vertical direction. The second cover 52 can be made of tempered glass. As shown in fig. 10 (b), the second cover 52 can further include a scattering layer 52a formed on each face corresponding to the LED package receiving portion 51 a.
A scattering layer (scattering layer) 52a may be formed on a lower surface of a region corresponding to the LED package receiving portion 51 a. The scattering layer 52a plays a role of scattering (scattering) light of red, green, and blue colors. The scattering layer 52a has a protrusion shape like a triangular saw-tooth shape, but is not limited thereto. The scattering layer 52a can be formed by a sanding (sanding) or etching (etching) process.
The third cover 53 may have a dome (dome) shape at each position corresponding to the LED package 10. The third cover 53 can divide the LED package receiving parts 53a into one and provide to be able to individually receive the LED packages 10. The third cover 53 can be made of a lightweight flexible film stock material. The third cover 53 may be a film made of polyethylene terephthalate (PET). The third cover 53 can be bonded on the substrate by thermal compression (thermocompression bonding) or by coating an adhesive transparent resin (transparent resin) on the upper surface of the reflective layer 34 and the bottom surface of the third cover 53.
Fig. 11 is a front view schematically showing an LED panel 1 according to another embodiment of the present invention, and fig. 12 is a front view schematically showing an LED panel 1 according to another embodiment of the present invention.
Hereinafter, an LED panel 1 according to another embodiment of the present invention will be described. The description is limited to only the portions different from the above-described LED panel 1 according to one embodiment, and the same portions will be denoted by the same reference numerals and the description thereof will be omitted.
The LED panel 1 according to another embodiment can include an LED package 10 and a conductive layer 20. Further, the substrate 41, the transparent electrode layer 42, the solder electrode layer 43, the reflective layer 44, the heat sink 45, and the transparent cover 50 may be further included.
The substrate 41 may be made of an aluminum PCB, a copper PCB, tempered glass, or a film made of PET (polyethylene terephthalate). The substrate 41 may include a plurality of LED portions and a peripheral portion surrounding the LED portions.
The transparent electrode layer 42 is a layer for improving adhesion and preventing diffusion of solder. The transparent electrode layer 42 can be provided on one surface of the substrate 41 in the peripheral portion. The transparent electrode layer 42 functions as an electric circuit for transmitting an external power source or a signal, and as a conductive heat dissipation support portion for discharging heat to the outside in accordance with the operation of the device. The transparent electrode layer 42 can form a circuit pattern. The transparent electrode layer 42 may be made of a transparent conductive material such as an alloy made of Indium Tin Oxide (ITO) or chromium (Cr), nickel (Ni), or silver (Ag). The transparent electrode layer 42 can be formed on one surface of the substrate 41 by coating or deposition (evaporation). The transparent electrode layer 42 may be in the form of a thin film.
A plurality of conductive layers 20 can be provided per unit pixel. The conductive layer 20 can be provided on one surface of the substrate 41 in the LED region adjacent to the transparent electrode layer 42. The conductive layer 20 can be provided in a size and shape corresponding to the LED package 10.
The solder electrode layer 43 can be formed on one surface of the transparent electrode layer 42. The brazing electrode layer 43 can be made of at least one or an alloy of two or more of titanium (Ti), platinum (Pt), gold (Au), chromium (Cr), nickel (Ni), and silver (Ag).
According to one embodiment, the brazing electrode layer 43 can be made of chromium (Cr), nickel (Ni), and gold (Au). According to another embodiment, the brazing electrode layer 43 can be made of titanium (Ti), platinum (Pt), and gold (Au). According to yet another embodiment, the brazing electrode layer 43 can be made of nickel (Ni) and silver (Ag). According to yet another embodiment, the brazing electrode layer 43 can be made of nickel (Ni) and copper (Cu).
The solder electrode layer 43 can be formed by vacuum deposition (vacuum evaporation), electroplating (electro plating), or electroless plating (electro plating).
The LED package 10 can be provided on one surface of the brazing electrode layer 43. The LED package 10 can be mounted by soldering. More specifically, the LED package 10 can be bonded to the solder electrode layer 43 by low-temperature soldering at a temperature of 200 ℃ or lower using a ternary phase diagram (ternary phase diagram) alloy made of tin (Sn), bismuth (Bi), and silver (Ag). The LED package 10 can be electrically connected to the transparent electrode layer 42 by the solder electrode layer 43.
The reflective layer (reflection layer) 44 in fig. 12 functions to emit all of the reflected light reflected by the LED package 10, the lens 581, or the like during device operation to the upper surface of the substrate 41 made of glass. The reflective layer 44 can be formed between one surface of the substrate 41 made of glass and the transparent electrode layer 42. The reflective layer 44 can be formed on one surface of the substrate 41 made of glass by coating (deposition) in a thin film form. The reflective layer 44 may be made of a material having a reflectance of 90% or more in a wavelength range of visible light. Wherein the reflective layer 44 can be made of barium sulfate (BaSO)4) Alumina (Al)2O3) Or silicon dioxide (SiO)2) Any one of them.
The heat sink 45 functions to discharge heat generated by the operation of the LED panel 1 to the outside. The heat sink 45 can be provided on one surface of the conductive layer 20. The heat sink 45 can be attached to the LED package frame 500 using a pre-form of eutectic alloy, solder, or silver paste. The LED package 10 can be mounted on the heat sink 45. The heat sink 45 can be made of silver (Ag) or copper (Cu) having excellent thermal conductivity.
Fig. 13 is a diagram schematically showing a step of forming the LED package 10 according to an embodiment of the present invention.
A method of manufacturing the LED package 10 having the driver IC100 mounted with the capacitor 400 according to one embodiment is as follows.
Referring to fig. 13, the method of manufacturing the LED package can include a capacitor region exposing step (S10), a capacitor layer forming step (S20), a capacitor forming step (S30), and an aluminum electrode forming step (S40).
In the capacitor region exposing step (S10), a photosensitive substance can be coated and cured on the driver IC100 in which the positive terminal 140 and the negative terminal 150 are embedded. Thereafter, a capacitor pattern can be formed by removing a capacitor region composed of the positive terminal 140, the negative terminal 150, and the region therebetween.
In the capacitor layer forming step (S20), lead zirconate titanate (PZT), tantalum pentoxide (Ta) are coated on the driver IC100 including the capacitor region2O5) Or barium titanate (BaTiO)3) Can be deposited.
In the capacitor forming step (S30), the capacitor 400 can be formed by removing the region other than the capacitor region by a lift-off process.
In the electrode forming step (S40), the positive electrode 410 and the negative electrode 420 can be laminated and formed at positions opposite to the positive terminal 140 and the negative terminal 150 on one cross section of the capacitor 400.
Although the present invention has been described in detail with reference to the preferred embodiments, the scope of the present invention is not limited to the specific embodiments, and the scope of the present invention should be construed based on the appended claims. In addition, it will be understood by those skilled in the art that various modifications and changes can be made without departing from the scope of the present invention.
Claims (17)
1. An LED package, comprising:
a driver IC of silicon material;
a positive bias, a negative bias, a positive terminal, a negative terminal, a signal input terminal, and a signal output terminal formed at the driver IC;
a Zener diode formed of the silicon material and disposed apart from the driver IC by an insulating layer; and
and the LED chip is arranged on the Zener diode and is electrically connected with the positive bias and the negative bias.
2. The LED package of claim 1,
the Zener diode is a p-n junction structure, further comprises a Zener diode p layer and a Zener diode n layer and an active layer,
the LED chip is a p-n junction structure further comprising an LED chip p-layer electrically connected with the Zener diode n-layer and the positive bias and an LED chip n-layer electrically connected with the Zener diode p-layer and the negative bias.
3. The LED package of claim 1,
the zener diode is separately provided independently of the driver IC.
4. An LED package, comprising:
a driver IC made of a silicon material and formed with a Zener diode;
positive bias, negative bias, positive terminal and negative terminal formed on the driver IC;
an LED chip mounted on the Zener diode and electrically connected to the positive bias and the negative bias;
a capacitor made of ferroelectric and formed by stacking the positive terminal, the negative terminal and a region therebetween; and
positive and negative electrodes formed on the capacitor are stacked opposite to the positive and negative terminals.
5. The LED package of claim 4,
the capacitor is made of any one of lead lanthanum zirconate titanate, lead zirconate titanate, tantalum pentoxide, or barium titanate.
6. The LED package of claim 4,
the capacitor is formed on the driver IC by sputtering or chemical vapor deposition.
7. The LED package of claim 4,
the positive electrode and the negative electrode are made of aluminum, silver, or gold.
8. An LED panel, comprising:
a substrate made of any one of aluminum PCB, copper PCB, tempered glass, or polyethylene terephthalate;
an adhesive insulating layer provided on one surface of the substrate and made of any one of aluminum nitride, beryllium oxide, or aluminum oxide;
a conductive layer which is provided on one surface of the adhesive insulating layer and in which a carbon graphite layer having a lattice shape with a thickness of 10 to 20 ㎛ is formed by stacking on one surface of a copper layer having a thickness of 10 to 30 ㎛;
a brazing electrode layer provided on one surface of the conductive layer and formed by laminating a silver layer having a thickness of 1 to 5 ㎛ on a nickel layer having a thickness of 0.5 to 3 ㎛;
the LED package is arranged on the upper surface of the brazing electrode layer and is arranged on the bottom surface of a cavity formed in the LED package frame; and
and a reflective layer which is provided on one surface of the solder electrode layer in parallel with the LED package and is made of barium sulfate or aluminum oxide.
9. The LED panel of claim 8,
the LED packaging structure further comprises a transparent cover, wherein the transparent cover is arranged on the upper portion of the conducting layer, and an LED packaging piece accommodating portion for accommodating the LED packaging piece is formed.
10. The LED panel of claim 9,
the transparent cover includes:
a first cover provided to divide the LED package receiving parts from each other; and
and a second cover disposed in surface-to-surface contact with one surface of the first cover.
11. The LED panel of claim 10,
the first cover is made of polyvinyl butyral.
12. The LED panel of claim 10,
the second cover further includes a diffusion layer formed on a surface corresponding to the LED package receiving part.
13. The LED panel of claim 9,
the transparent cover is made of polyethylene terephthalate, and is bonded by thermocompression bonding or coating with an adhesive transparent resin.
14. An LED panel, comprising:
a substrate made of any one of aluminum PCB, copper PCB, tempered glass, or polyethylene terephthalate, and having a plurality of LED parts and a peripheral portion surrounding the LED parts;
a transparent electrode layer which is provided on the peripheral portion on one surface of the substrate and on which a circuit pattern is formed;
a conductive layer provided on the LED region on one surface of the substrate, the conductive layer having a lattice-shaped carbon graphite layer with a thickness of 10 to 20 ㎛ laminated on one surface of a copper layer with a thickness of 10 to 30 ㎛; and
an LED package disposed on the upper surface of the conductive layer and on the bottom surface of the cavity formed on the LED package frame,
the LED package is joined to a solder electrode layer provided on an upper surface of the conductive layer by soldering.
15. The LED panel of claim 14,
the brazing electrode layer is made of at least one or more of titanium, platinum, gold, chromium, nickel and silver.
16. A method of manufacturing an LED package, comprising:
a step of forming a capacitor pattern by removing a capacitor region constituted by the positive terminal, the negative terminal, and a region therebetween after coating and curing a photosensitive substance on the driver IC embedded with the positive terminal and the negative terminal;
a step of depositing a stacked capacitor layer including the capacitor region on the driver IC;
a step of removing the capacitor pattern region by a peeling process; and the number of the first and second groups,
a step of forming a positive electrode and a negative electrode by laminating at positions on the capacitor opposite to the positive terminal and the negative terminal.
17. The method of manufacturing an LED package according to claim 16,
in the step of depositing the capacitor layers to be stacked,
the deposition substance is made of any one of lead lanthanum zirconate titanate, lead zirconate titanate, tantalum pentoxide, or barium titanate.
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| CN201910113049.0A CN111564546A (en) | 2019-02-13 | 2019-02-13 | LED package, manufacturing method thereof and LED panel with same |
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| CN201910113049.0A CN111564546A (en) | 2019-02-13 | 2019-02-13 | LED package, manufacturing method thereof and LED panel with same |
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| WO2024065381A1 (en) * | 2022-09-29 | 2024-04-04 | Jade Bird Display (shanghai) Limited | Microthree-dimensional printing device |
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