CN101814489A - Light emitting diode packaging structure with functional chip and packaging method thereof - Google Patents
Light emitting diode packaging structure with functional chip and packaging method thereof Download PDFInfo
- Publication number
- CN101814489A CN101814489A CN201010119313A CN201010119313A CN101814489A CN 101814489 A CN101814489 A CN 101814489A CN 201010119313 A CN201010119313 A CN 201010119313A CN 201010119313 A CN201010119313 A CN 201010119313A CN 101814489 A CN101814489 A CN 101814489A
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- chip
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- emitting diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
Abstract
The invention relates to a light emitting diode packaging structure with a functional chip, which comprises a substrate, at least one light emitting diode chip and at least one functional chip, wherein a metal wiring is arranged on the substrate, a metal welding pad is arranged on the metal wiring, and the at least one light emitting diode chip and the functional chip are inversely installed and welded on the metal welding pad on the substrate through salient point welding balls. Compared with the prior art, the invention has the advantages that the step of forging a metal wire or connecting by other methods is omitted, thereby achieving high reliability; the packaging space is saved, and the use flexibility thereof is improved, so that the brightness in the same space or other functions can be enhanced; and the heat radiating function is improved.
Description
Technical field
The present invention relates to the manufacturing field of LED, specifically be flip chip bonding led chip and other functional chip on same substrate, and see through metal line on the substrate, input/outbound port of described chip is connected or be drawn out on the substrate package structure for LED that has functional chip and method for packing thereof as external weld pad.
Background technology
Led light source has high efficiency, long-life, does not contain advantages such as harmful substance such as Hg.Along with the LED technology rapid development, performances such as its brightness, life-span all are greatly improved, and the application of light-emitting diode more and more widely.Light-emitting diode all needs corresponding integrated circuit to drive and control as application such as general illumination, notebook or TV backlight, so that all being controlled in the suitable scope as parameters such as brightness and colour temperatures of light-emitting diode.Simultaneously, partial L ED chip need add functions such as high temperature, overvoltage, overcurrent protection and remote control, even also needs combining environmental temperature sensing, ambient light sensing, makes control corresponding near sensing etc.Therefore, the application of LED and other functional circuit or chip are undivided.
In existing LED encapsulating structure or application, light-emitting diode chip for backlight unit and other functional chip generally are packaged separately, connect with lead or printed circuit board (PCB) then.In addition, exist in the existing encapsulating structure naked light-emitting diode chip for backlight unit and simple naked functional chip to beat the metal wire mode and be connected and to be encapsulated in the encapsulating structure on the same support.Common examples has naked light-emitting diode chip for backlight unit and has only the function of the naked silicon parallel connection of Zener diode back-to-back of two input/outbound ports with the realization antistatic.But,, input/outbound port more naked functional chip slightly complicated for function, the metal wire mode is connected with naked led chip and the encapsulating structure that is encapsulated on the same support does not occur to beat. and reason is when connecting the more functional chip of input/outbound port, the also corresponding increase of metal wire that need beat, be easy to make metal line bridging, make yield reduce greatly, and in order to prevent metal line bridging, encapsulated space also need corresponding increase.In a lot of new application, all can require to save the space and make the whole light source module reach miniaturization and integrated originally with being lowered into.Therefore, above-mentioned encapsulating structure can not satisfy related request.
Summary of the invention
The objective of the invention is deficiency, a kind of package structure for LED that has functional chip is provided at above-mentioned existing LED encapsulating structure existence.
Another object of the present invention provides a kind of LED encapsulation method that has functional chip.
Invention is achieved in that the package structure for LED that has functional chip, comprise substrate, a minimum light-emitting diode chip for backlight unit and a minimum functional chip, substrate is provided with metal line, and a minimum light-emitting diode chip for backlight unit and a minimum functional chip are welded on the metal line on the substrate by the salient point solder-ball flip.Input/the outbound port of light-emitting diode chip for backlight unit and functional chip is connected by metal line or is drawn out on the substrate as external weld pad.
On the described metal line metal pad is set, a minimum light-emitting diode chip for backlight unit and a minimum functional chip are welded on the metal pad on the substrate by the salient point solder-ball flip; Perhaps described salient point soldered ball is present on the substrate before the upside-down mounting welding at least, perhaps is present on light-emitting diode chip for backlight unit and the functional chip.
Described salient point soldered ball can be present on substrate and light-emitting diode chip for backlight unit and the functional chip before the upside-down mounting welding simultaneously.
Described substrate is provided with as external weld pad.
Described substrate can be to make with materials such as silicon chip, pottery, wiring board, metal or alloy.
Described salient point soldered ball can be metal homogenous material, multilayer material or alloys such as lead, tin, gold or copper.
Described metal wiring layer can be any single electric conducting material, multilayer material or alloys such as aluminium, gold or copper.Metal line can be one or more layers.
The method for packing that has the package structure for LED of functional integrated circuit chip, it step that comprises is as follows:
One, makes substrate, on substrate, form metal line;
Two, on substrate or chip, form the salient point soldered ball at least on one side;
Three, light-emitting diode chip for backlight unit and functional chip are connected on the substrate by salient point soldered ball while flip chip bonding.
If described substrate conducts electricity,, on insulating barrier, make metal line again making insulating barrier on the substrate earlier; If described substrate insulate, metal line can directly be produced on the substrate.
Compared with prior art, the present invention has the following advantages: 1, design direct linkage function chip and light-emitting diode chip for backlight unit by the metal line on the substrate, can omit the step of breaking metal wire or plugging into other method; Simultaneously, all electrodes of single chips are plugged into and are once finished, and it is simple to beat primary line than each electrode, the reliability height; 2, the spacing between integrated circuit (IC) chip and the light-emitting diode chip for backlight unit can accomplish to have only tens microns, and the required space of functional chip and light-emitting diode chip for backlight unit is littler than plugging into other method, has saved assembling space, has improved the flexibility of its use; Brightness or other function in the same space can be promoted; 3, can allow the heat of chip directly see through substrate with face-down bonding technique encapsulation function integrated circuit (IC) chip and light-emitting diode chip for backlight unit better rejects heat on the support; 4, can be arbitrarily with the functional integrated circuit chip of required difference in functionality and one or many light-emitting diode chip for backlight unit with the face-down bonding technique encapsulation and plug on same substrate, can realize different brightness, the chip-scale light source of difference in functionality (as light modulation, light-operated, acoustic control etc.).
Description of drawings
Fig. 1 is light-emitting diode chip for backlight unit and the circuit diagram that connects the functional chip of an electrostatic discharge protection;
Fig. 2 has the cross-sectional structure schematic diagram of the package structure for LED embodiment 1 of functional chip for the present invention;
Fig. 3 has the vertical view of the package structure for LED embodiment 1 of functional chip for the present invention;
Fig. 4 is the circuit diagram of the led driver chip of light-emitting diode chip for backlight unit and the control of band solar cell;
Fig. 5 has the vertical view of the package structure for LED embodiment 2 of functional chip for the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments package structure for LED and the method for packing thereof that the present invention has functional chip is described in detail.
The package structure for LED that has functional chip, as Fig. 2, Fig. 3 and Fig. 5, comprise substrate 3, light-emitting diode chip for backlight unit 1 and functional chip 2, substrate 3 is provided with metal line 5, can be provided with metal pad 8 on the metal line 5, a minimum light-emitting diode chip for backlight unit 1 and functional chip 2 are connected on the metal pad 8 on the substrate 3 by salient point soldered ball 7 flip chip bondings.Salient point soldered ball 7 is present on substrate 3, light-emitting diode chip for backlight unit 1 or the functional chip 2 before the upside-down mounting welding at least; Perhaps, salient point soldered ball 7 is present on substrate 3 and light-emitting diode chip for backlight unit 1 and the functional chip 2 before the upside-down mounting welding simultaneously.Input/the outbound port of light-emitting diode chip for backlight unit 1 and functional chip 2 is connected by metal line or is drawn out on the substrate as external weld pad 9.The collocation of light-emitting diode chip for backlight unit 1 and functional chip 2 can be any combination that one or more functional chips are joined one or more light-emitting diode chip for backlight unit; Functional chip can be a difference in functionality, as driver, prevention ESD diode and converter etc.; Light-emitting diode chip for backlight unit can be different sizes, the chip portfolio of color.
Described metal line can be any single electric conducting material, multilayer material or alloys such as aluminium, gold or copper.Metal line 5 also can be provided with one or more layers as required.Substrate can be to make with materials such as silicon chip, pottery, wiring board, metal or alloy.Salient point soldered ball 7 can be metal homogenous material, multilayer material or alloys such as lead, tin, gold or copper; Salient point soldered ball 7 can be by electroplating or alternate manner formation.
The LED encapsulation method that has functional chip, it step that comprises is as follows:
One, makes substrate, on substrate, form metal line;
Two, on substrate or light-emitting diode chip for backlight unit and functional chip, form the salient point soldered ball;
Three, light-emitting diode chip for backlight unit and functional chip are connected on the substrate by salient point soldered ball while flip chip bonding.
Making for substrate:,, must as preventing metal line and substrate conducting, on insulating barrier, make metal line again making insulating barrier on the substrate earlier if substrate conducts electricity according to the material of substrate; If substrate insulate, metal line then can directly be produced on the substrate.On the insulating barrier of conductive substrates or on the dielectric substrate, electrode design according to light-emitting diode chip for backlight unit and functional chip, make suitable metal line in order to replace beating metal wire or other method, the input/outbound port of light-emitting diode chip for backlight unit and functional chip being plugged into or port is connected to is used as external weld pad on the substrate.Metal wiring layer and light-emitting diode chip for backlight unit and functional chip are welded to connect by the salient point solder-ball flip, and salient point soldered ball existence and metal wiring layer or said chip one side at least before upside-down mounting welding perhaps are present on metal line and the chip simultaneously.
Shown in the circuit diagram of Fig. 1, light-emitting diode chip for backlight unit 1 a naked silicon of back-to-back Zener diode in parallel is as the function of functional chip 2 with the realization antistatic.
As shown in Figures 2 and 3, substrate 3 materials can be silicon chips, because silicon chip is the material of conduction, must make insulating barrier 4 to separate metal line 5 and substrate 3 on substrate 3.Insulating barrier 4 can be to use the chemical vapour deposition (CVD) tube furnace, at the high temperature silica layer of hot conditions growth.Insulating barrier 4 is provided with metal wiring layer 5, and metal wiring layer 5 can be aluminium or other metal that cooperates the mode of photoetching and etching process to make with electron beam evaporation.Another insulating barrier 6 protection metal wiring layers 5, insulating barrier 6 can be to use the mode of plasma enhanced chemical vapor deposition to deposit the layer of silicon dioxide insulating barrier.Salient point soldered ball 7 is set on insulating barrier 6 windows to be connected with metal wiring layer 5.Salient point soldered ball 7 can be made with electroplating technology.Salient point soldered ball 7 can be metal homogenous material, multilayer material or alloys such as gold. metal wiring layer 5 needs to make according to the situation of specifically plugging into of light-emitting diode chip for backlight unit 1 and functional chip 2.With light-emitting diode chip for backlight unit 1 and back-to-back the naked silicon flip chip bonding of Zener diode be connected on the salient point soldered ball 7 of substrate.Upside-down mounting welding can be to add the method that the nation of ultrasonic power decides bonding after the pressurized, heated to realize.As shown in Figure 1, the input of light-emitting diode chip for backlight unit 1 goes out/and port sees through the salient point soldered ball 7 that is arranged on the substrate 3 by metal wiring layer 5, is connected to the input/outbound port of silicon 2, and finish and plug into.Other port also is drawn out on the substrate 3 through metal wiring layer 5 and is used as external other system as external weld pad 9.
Shown in the circuit diagram of Fig. 4, light-emitting diode chip for backlight unit 1 is connected with the input/outbound port of the led driver chip of being with solar cell control as functional chip 10, to realize the some of solar energy Green ground lamp or solar energy backup battery traffic lights and marker lamp system.Wherein the purposes of a part of port is as follows:
1, solar cell negative pole input port (SB-) is with connecting the solar cell negative pole.
2, LED switch delivery outlet (LEDEn), with the negative pole that connects LED, whether control LED lights.
3, the anodal input port (Vin) of control chip is with connecting solar cell and led chip positive pole.
4, control chip negative pole input port (GND) is as the negative pole of system.
5, light sensing input switch input port (UV), ambient brightness information around providing allows control chip export suitable current, thus the brightness of control led chip.
As shown in Figure 5; substrate 3 can be a ceramic; because substrate 3 is nonconducting; metal wiring layer 5 can be set directly on the substrate 3; metal wiring layer 5 can be gold or other metal, does not need dielectric protection layer on the metal wiring layer 5, can directly make the salient point soldered ball on metal pad 8; the salient point soldered ball can be that the salient point soldered ball can be materials such as Pb-Sn paste with the stencilization fabrication techniques.Light-emitting diode chip for backlight unit 1 and led driver chip 10 are decided on the metal pad 8 that the bonding flip chip bonding is connected on substrate with the mode nation of Reflow Soldering.。The negative pole of led chip sees through the LED output switching terminal mouth (LEDEn) that metal wiring layer 5 is linked led driver chip 10.In addition, the positive pole of LED is linked the electrode input end mouth (Vin) of control chip.Led driver chip 10 is except LED switch delivery outlet (LEDEn), other input/outbound port all must see through metal wiring layer 5 and be drawn out on the substrate 3 different from external weld pad 9, as other relevant part of connected system, as the essential solar cell negative input mouth (SB-) that connects led driver chip 10 as external weld pad 9 that sees through of the negative pole of solar cell.
The present invention is not limited to above-mentioned execution mode, if various changes of the present invention or modification are not broken away from the spirit and scope of the present invention, if these are changed and modification belongs within claim of the present invention and the equivalent technologies scope, then the present invention also comprises these changes and modification.
Claims (10)
1. the package structure for LED that has functional chip, comprise substrate, a minimum light-emitting diode chip for backlight unit and a minimum functional chip, it is characterized in that, substrate is provided with metal line, and a minimum light-emitting diode chip for backlight unit and a minimum functional chip are welded on the metal line on the substrate by the salient point solder-ball flip.
2. the package structure for LED that has functional chip as claimed in claim 1, it is characterized in that, on the described metal line metal pad is set, a minimum light-emitting diode chip for backlight unit and a minimum functional chip are welded on the metal pad on the substrate by the salient point solder-ball flip.
3. the package structure for LED that has functional chip as claimed in claim 1 is characterized in that, described salient point soldered ball is present on the substrate at least before the upside-down mounting welding or is present on light-emitting diode chip for backlight unit and the functional chip; Perhaps described salient point soldered ball is present on substrate and light-emitting diode chip for backlight unit and the functional chip before the upside-down mounting welding simultaneously.
4. as claim 1, the 2 or 3 described package structure for LED that have functional chip, it is characterized in that described substrate is provided with as external weld pad.
5. as claim 1, the 2 or 3 described package structure for LED that have functional chip, it is characterized in that described substrate is to make with silicon chip, pottery, wiring board, metal or alloy material.
6. as claim 1, the 2 or 3 described package structure for LED that have functional chip, it is characterized in that described salient point soldered ball is lead, tin, gold or copper homogenous material, two-layer and two-layer above material or alloy.
7. as claim 1 or the 2 described package structure for LED that have functional chip, it is characterized in that described metal wiring layer is the single electric conducting material of aluminium, gold or copper, two-layer and two-layer above material or alloy.
8. the package structure for LED that has functional chip as claimed in claim 1 or 2 is characterized in that metal line is one or more layers.
9. have the LED encapsulation method of functional chip, it is characterized in that, the step that comprises is as follows:
One, makes substrate, on substrate, form metal line;
Two, on substrate or light-emitting diode chip for backlight unit and functional chip, form the salient point soldered ball;
Three, light-emitting diode chip for backlight unit and functional chip are connected on the substrate by salient point soldered ball while flip chip bonding.
10. the LED encapsulation method that has functional chip as claimed in claim 9 is characterized in that, if described substrate conducts electricity, making insulating barrier on the substrate earlier, makes metal line again on insulating barrier; If described substrate insulate, metal line directly is produced on the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010119313A CN101814489A (en) | 2010-03-02 | 2010-03-02 | Light emitting diode packaging structure with functional chip and packaging method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010119313A CN101814489A (en) | 2010-03-02 | 2010-03-02 | Light emitting diode packaging structure with functional chip and packaging method thereof |
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| CN101814489A true CN101814489A (en) | 2010-08-25 |
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| CN201010119313A Pending CN101814489A (en) | 2010-03-02 | 2010-03-02 | Light emitting diode packaging structure with functional chip and packaging method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104091879A (en) * | 2014-07-25 | 2014-10-08 | 胡溢文 | LED chip packaging structure with two luminous surfaces |
| CN104091866A (en) * | 2014-07-25 | 2014-10-08 | 胡溢文 | Method for preparing LED lamp filament of horizontal flip-chip |
| CN108766489A (en) * | 2018-08-01 | 2018-11-06 | 灿芯半导体(上海)有限公司 | A kind of ddr interface for flip-chip packaged |
| CN111564546A (en) * | 2019-02-13 | 2020-08-21 | 株式会社辉元 | LED package, manufacturing method thereof and LED panel with same |
| CN112186086A (en) * | 2019-06-17 | 2021-01-05 | 成都辰显光电有限公司 | Bonding method of micro light-emitting diode chip |
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| CN1893974A (en) * | 2003-10-13 | 2007-01-10 | 葛兰素史密丝克莱恩生物有限公司 | Immunogenic compositions |
| CN1988119A (en) * | 2005-12-19 | 2007-06-27 | 杭州士兰明芯科技有限公司 | Light emitting diode with static damage protective function and its producing method |
| CN101154656A (en) * | 2006-09-30 | 2008-04-02 | 香港微晶先进封装技术有限公司 | Multi-chip light emitting diode module group structure and method of producing the same |
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2010
- 2010-03-02 CN CN201010119313A patent/CN101814489A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1893974A (en) * | 2003-10-13 | 2007-01-10 | 葛兰素史密丝克莱恩生物有限公司 | Immunogenic compositions |
| CN1988119A (en) * | 2005-12-19 | 2007-06-27 | 杭州士兰明芯科技有限公司 | Light emitting diode with static damage protective function and its producing method |
| CN101154656A (en) * | 2006-09-30 | 2008-04-02 | 香港微晶先进封装技术有限公司 | Multi-chip light emitting diode module group structure and method of producing the same |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104091879A (en) * | 2014-07-25 | 2014-10-08 | 胡溢文 | LED chip packaging structure with two luminous surfaces |
| CN104091866A (en) * | 2014-07-25 | 2014-10-08 | 胡溢文 | Method for preparing LED lamp filament of horizontal flip-chip |
| CN104091866B (en) * | 2014-07-25 | 2017-02-15 | 胡溢文 | Method for preparing LED lamp filament of horizontal flip-chip |
| CN108766489A (en) * | 2018-08-01 | 2018-11-06 | 灿芯半导体(上海)有限公司 | A kind of ddr interface for flip-chip packaged |
| CN108766489B (en) * | 2018-08-01 | 2023-08-08 | 灿芯半导体(上海)股份有限公司 | DDR interface for flip-chip packaging |
| CN111564546A (en) * | 2019-02-13 | 2020-08-21 | 株式会社辉元 | LED package, manufacturing method thereof and LED panel with same |
| CN112186086A (en) * | 2019-06-17 | 2021-01-05 | 成都辰显光电有限公司 | Bonding method of micro light-emitting diode chip |
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Open date: 20100825 |