CN1988119A - Light emitting diode with static damage protective function and its producing method - Google Patents
Light emitting diode with static damage protective function and its producing method Download PDFInfo
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- CN1988119A CN1988119A CNA2005101116307A CN200510111630A CN1988119A CN 1988119 A CN1988119 A CN 1988119A CN A2005101116307 A CNA2005101116307 A CN A2005101116307A CN 200510111630 A CN200510111630 A CN 200510111630A CN 1988119 A CN1988119 A CN 1988119A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
Abstract
This invention discloses a new design and its manufacturing method for LED with a static harm protection function, in which, this inventd LED device structure includes a flip-chip bonding LED chip and a Si base plate with a protection function to static harm, in which, the LED chip is conducted with the Si base plate by the welding way and the static protection function is realized by a NPN or a PNP triode to connect the LED with the collector and the emission in parallel and regulate the break-over voltage of the triode to stand against the harm from static release.
Description
Technical field
The present invention relates to a kind of light-emitting diode the electrostatic damage protective device structure with and manufacture method, relate generally to a kind of silicon substrate structure and manufacturing process thereof that has triode.
Background technology
Indigo plant, green light LED (LED) based on GaN base III group nitride material have very high luminous efficiency, in illumination and high brightness demonstration field wide application prospect are arranged.But such device is very responsive to electrostatic damage (ESD) usually, and this has limited the reliability of device and the rate of finished products of manufacturing process greatly.Someone proposes the silica-based Zener diode (T.Inoue: Japanese Patent No.: H11-040848) or the Zener diode of two differential concatenations (M.R.Krames: U.S. Patent number: 6 by a reversal connection in parallel with LED, 486,499) improve the antistatic property of GaN base LED.Such design generally is by realizing on the silicon substrate that is used for the led chip flip chip bonding.When LED and silicon Zener diode shunting means run into the static release pulses, the latter will shunt most of electric current, make the magnitude of current that flows through LED reduce greatly, thereby play the effect that protection LED avoids the potential pulse damage.Make the silicon zener play good esd protection effect, design the operating voltage of the breakdown voltage value of silicon zener usually a little more than LED.If silicon zener puncture voltage is too low, LED can't operate as normal; On the contrary, if the higher effect that also can't play the bleed off electric current of puncture voltage design.A good esd protection circuit should contain following two aspect features: the one, and leakage current is as far as possible little before opening; The 2nd, the dynamic electric resistor after opening is little.According to this principle, this patent proposes a kind of esd protection circuit device based on silicon triode, and in conjunction with a kind of LED device with good resistance electrostatic damage characteristic of flip chip bonding technological design.
Summary of the invention
The present invention is intended to overcome the above-mentioned ESD damage problem of mentioning, the design that a kind of antistatic LED matrix based on the silicon triode structure is provided with and preparation method thereof.
The technical solution used in the present invention is, has the manufacturing method for LED of static damage protective function, comprising:
One epitaxial substrate is provided, on described epitaxial substrate, forms n type GaN layer, luminescent layer and p type GaN layer successively;
On the n type GaN layer on the described epitaxial substrate, draw the n electrode;
On p type GaN layer, form the p electrode;
The a plurality of pressure welding point of deposition on p, n electrode;
One silicon substrate is provided, form on the described silicon substrate with above-mentioned epitaxial substrate on p, the n electrode collector and emitter of corresponding silicon triode respectively, the base stage of formation silicon triode between described two utmost points;
On described collector and emitter, form metal electrode;
Described epitaxial substrate is inverted, and its p, n electrode are connected respectively with the emitter region electrode with the collector area electrode of described silicon substrate respectively.
Reasonable is that the material of described pressure welding point comprises Ti/Al/Au or Cr/Ni/Au.
Reasonable is that the base is that it is provided with passivation layer for open circuit connects.
Another kind of the present invention has the light-emitting diode of static damage protective function, comprising:
Silicon substrate, the base stage that comprises the collector and emitter of silicon triode, described silicon triode is between described collector and emitter;
Metal electrode is positioned on the emitter and collector of described silicon triode, forms emitter region metal electrode and collector area metal electrode;
Pressure welding point links to each other described collector area electrode and emitter region metal electrode respectively with n electrode, p electrode on the epitaxial substrate;
Further comprise on the described epitaxial substrate:
N type GaN layer is positioned on the described epitaxial substrate;
Luminescent layer is positioned on the described n type GaN layer;
P type GaN layer is arranged on the described luminescent layer;
Described n electrode is formed by plated metal after described epitaxial substrate being etched to n type GaN layer;
Described p electrode plated metal on the described epitaxial substrate that is not etched forms.
Reasonable is that the material of described pressure welding point comprises Ti/Al/Au or Cr/Ni/Au.
The electrostatic protection characteristic of the silicon triode among the present invention is relevant with the electrical properties of its object of protection.According to the electrology characteristic of object of protection,, can optimize the protection effect by the breakdown voltage value of adjustment silicon triode and the dynamic electric resistor characteristic after the puncture.The silicon triode of protective circuit can be NPN or positive-negative-positive.
The making of antistatic LED device of the present invention is by the led chip flip chip bonding is connected on the silicon substrate, make LED p, n electrode respectively with the conducting in parallel of the collector and emitter of silicon triode.Allow open base simultaneously.Device is by being produced on the wire bonding point and extraneous UNICOM on the silicon substrate.When this LED device runs into static discharge, silicon triode will be shunted most electric currents, and the magnitude of current of the LED that flows through is just relatively limited, so LED can be in order to avoid recruit damage.Different with the zener of aforementioned two differential concatenations is, after silicon triode is breakdown negative resistance charactertistic is arranged, and this has improved it greatly in the drop ability of discharge stream of pulse shock.In addition, because this triode is a transverse pipe, collector electrode and emitter role can exchange, so its forward and reverse puncture voltage-current characteristic is similar, can play the effect of the pulse current of the positive and negative both direction of bleed off.
Description of drawings
Below, with reference to accompanying drawing, for those skilled in the art that, to the detailed description of the present utility model, above-mentioned and other purposes of the present utility model, feature and advantage will be apparent.
Fig. 1 (a) is the vertical view of flip LED chips of the present invention;
Fig. 1 (b) is the A-A direction cutaway view of Fig. 1 (a);
Fig. 2 (a) is the vertical view of silicon triode substrate of the present invention;
Fig. 2 (b) is the B-B direction cutaway view of Fig. 2 (a);
Fig. 3 (a) is the vertical view of the LED device of static electrification injury protection function of the present invention;
Fig. 3 (b) is the C-C direction cutaway view of Fig. 3 (a).
Embodiment
Specify with regard to example of the present invention below with reference to Fig. 1 to Fig. 3.
Shown in Figure 1 is the structure of led chip of the present invention.Do with regard to its structure and manufacture method below and specify.
At first shown in Fig. 1 (b), epitaxial growth of semiconductor material on substrate 17 in this legend, comprising: n type GaN layer 11, luminescent layer 16, and p type GaN layer 15.Etched portions epitaxial loayer zone so that draw n electrode 12, is used the Ti/Al/Au multiple layer metal up to n type layer usually then.Then, the translucent Ni/Au metal level of deposition is done 14 contacts of p electrode on the p electrode that p type GaN layer 15 constitutes.At last, on p electrode 14 and n electrode 12, deposition is used for the pressure welding point 13 that pressure welding engages led chip and silicon substrate, the normally good material of ductility such as Ti/Al/Au or Cr/Ni/Au.The height of pressure welding point 13 is usually between 2 microns to 10 microns.Finally form the led chip shown in Fig. 1 (a).
Shown in Figure 2 is the structure of silicon substrate of the present invention.Do with regard to its structure and manufacture method below and specify.
At first, shown in Fig. 2 (b), by injecting or the mode of diffusion is exactly the base of silicon triode at the p that makes figure and LED on the silicon substrate 21, collector electrode 211 that the n electrode is complementary and the position between emitter 212, two districts.In this embodiment, owing to only utilize the collector electrode 211 of triode and the puncture bleed off current effect at emitter 212 two ends, so the base open a way, generally uses passivation layer to protect 213.According to the operating voltage range of LED, adjust the breakdown threshold of silicon triode, in nitride based LED uses, set puncture voltage between 4 to 8 volts usually.Subsequently, make collector area metal electrode 24 and emitter region metal electrode 25 respectively by the mode of evaporation, annealing.Simultaneously, also on silicon substrate 21, make positive and negative electrode wire bonding point 23 and 22, make it to link respectively with collector area electrode 24 and emitter region metal electrode 25.
Shown in Figure 3 is the structure of the LED device of static electrification injury protection circuit of the present invention.Do with regard to its structure and manufacture method below and specify.
After the silicon substrate preparation of finishing led chip illustrated in figures 1 and 2 and band triode electrostatic discharge protective circuit; led chip is inverted; and p electrode 14 on the led chip shown in Figure 1 and n electrode 12 are aimed at respectively with the collector area electrode 24 and the emitter region electrode 25 of silicon substrate shown in Figure 2 respectively, by plus-pressure, heat and be aided with ultrasonic led chip and the silicon substrate firm engagement of making.
Finish LED device architecture such as Fig. 3 (a) behind the flip chip bonding; (b) shown in; comprise: the p that on silicon substrate 21, makes figure and LED; collector electrode 211 that the n electrode is complementary and emitter 212; position between two districts forms the base of silicon triode; open a way in this base; the general passivation layer that uses protects 213; pass through evaporation; the mode of annealing is made collector area metal electrode 24 and emitter region metal electrode 25 respectively; simultaneously; also on silicon substrate 21, make positive and negative electrode wire bonding point 23 and 22, make it to link respectively with collector area electrode 24 and emitter region metal electrode 25.The p electrode 14 of the led chip of upside-down mounting and n electrode 12 be the collector area electrode 24 and the emitter region electrode 25 of corresponding silicon substrate respectively.
Though described example of the present invention by above-mentioned nitride based LED example, they are illustrative, this inventive principle is equally applicable to other led chips that has transparent substrates.In fact, under the condition of the principle of the invention, can also carry out various forms of modifications to it.In addition, scope of the present invention is limited by appended claims.
Claims (5)
1, have the manufacturing method for LED of static damage protective function, comprising:
One epitaxial substrate is provided, on described epitaxial substrate, forms n type GaN layer, luminescent layer and p type GaN layer successively;
On the n type GaN layer on the described epitaxial substrate, draw the n electrode;
On p type GaN layer, form the p electrode;
The a plurality of pressure welding point of deposition on p, n electrode;
One silicon substrate is provided, form on the described silicon substrate with above-mentioned epitaxial substrate on p, the n electrode collector and emitter of corresponding silicon triode respectively, the base stage of formation silicon triode between described two utmost points;
On described collector and emitter, form metal electrode;
Described epitaxial substrate is inverted, and its p, n electrode are connected respectively with the emitter region electrode with the collector area electrode of described silicon substrate respectively.
2, light-emitting diode and the manufacture method thereof that has static damage protective function according to claim 1 is characterized in that,
The material of described pressure welding point comprises Ti/Al/Au or Cr/Ni/Au.
3, light-emitting diode and the manufacture method thereof that has static damage protective function according to claim 1 is characterized in that,
The base is that it is provided with passivation layer for open circuit connects.
4, have the light-emitting diode of static damage protective function, comprising:
Silicon substrate, the base stage that comprises the collector and emitter of silicon triode, described silicon triode is between described collector and emitter;
Metal electrode is positioned on the emitter and collector of described silicon triode, forms emitter region metal electrode and collector area metal electrode;
Pressure welding point links to each other described collector area electrode and emitter region metal electrode respectively with n electrode, p electrode on the epitaxial substrate;
Further comprise on the described epitaxial substrate:
N type GaN layer is positioned on the described epitaxial substrate;
Luminescent layer is positioned on the described n type GaN layer;
P type GaN layer is arranged on the described luminescent layer;
Described n electrode is formed by plated metal after described epitaxial substrate being etched to n type GaN layer;
Described p electrode plated metal on the described epitaxial substrate that is not etched forms.
5, the light-emitting diode that has static damage protective function according to claim 4, comprising: the material of described pressure welding point comprises Ti/Al/Au or Cr/Ni/Au.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101116307A CN100424846C (en) | 2005-12-19 | 2005-12-19 | Light emitting diode with static damage protective function and its producing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101116307A CN100424846C (en) | 2005-12-19 | 2005-12-19 | Light emitting diode with static damage protective function and its producing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1988119A true CN1988119A (en) | 2007-06-27 |
| CN100424846C CN100424846C (en) | 2008-10-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2005101116307A Expired - Fee Related CN100424846C (en) | 2005-12-19 | 2005-12-19 | Light emitting diode with static damage protective function and its producing method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101814489A (en) * | 2010-03-02 | 2010-08-25 | 晶科电子（广州）有限公司 | Light emitting diode packaging structure with functional chip and packaging method thereof |
| CN101271916B (en) * | 2008-05-09 | 2010-12-29 | 晶能光电（江西）有限公司 | Electrostatic-resistant gallium nitride illumination device and production method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI223900B (en) * | 2003-07-31 | 2004-11-11 | United Epitaxy Co Ltd | ESD protection configuration and method for light emitting diodes |
| CN1558451A (en) * | 2004-02-03 | 2004-12-29 | ���ڿƼ��ɷ�����˾ | Light emitting diode element capable of preventing electrostatic damage |
| TWI260795B (en) * | 2004-03-22 | 2006-08-21 | South Epitaxy Corp | Flip chip type- light emitting diode package |
-
2005
- 2005-12-19 CN CNB2005101116307A patent/CN100424846C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101271916B (en) * | 2008-05-09 | 2010-12-29 | 晶能光电（江西）有限公司 | Electrostatic-resistant gallium nitride illumination device and production method thereof |
| CN101814489A (en) * | 2010-03-02 | 2010-08-25 | 晶科电子（广州）有限公司 | Light emitting diode packaging structure with functional chip and packaging method thereof |
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| Publication number | Publication date |
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| CN100424846C (en) | 2008-10-08 |
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Granted publication date: 20081008 Termination date: 20171219 |