CN211858673U - Flip Micro LED full-color quantum dot chip - Google Patents
Flip Micro LED full-color quantum dot chip Download PDFInfo
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- CN211858673U CN211858673U CN202020476139.4U CN202020476139U CN211858673U CN 211858673 U CN211858673 U CN 211858673U CN 202020476139 U CN202020476139 U CN 202020476139U CN 211858673 U CN211858673 U CN 211858673U
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Abstract
The utility model relates to a full-color quantum dot chip of flip-chip Micro LED. The utility model provides a flip-chip Micro LED full-color quantum dot chip can form red blue green's light-emitting structure on single LED chip, need not to set up the RGB array, can transfer efficiency and yield by a wide margin to a huge extent; the single chip can not only complete full-color light emission, but also save the wafer area and the chip cost, and is beneficial to large-scale production of downstream enterprises; the additional quantum material can prevent the display effect of the chip from being influenced by the fluctuation of current. The utility model discloses an in the full-color quantum dot chip of flip-chip Micro LED, set up three negative pole and a public positive pole, can realize red, green, blue luminous of light color alone on a chip, or two kinds of light colors are luminous simultaneously, or the luminous effect of three kinds of light colors simultaneously, realize luminous light color adjustable.
Description
Technical Field
The utility model belongs to the technical field of the LED chip, concretely relates to full-color quantum dot chip of flip-chip Micro LED.
Background
The LED lamp is a lighting lamp widely applied at present, has the advantages of small volume, high brightness, low power consumption, less heat generation, long service life, environmental protection and the like, has various colors, and is deeply loved by consumers.
The production of LED lamps can be roughly divided into three steps: firstly, the manufacturing of the LED light-emitting chip, secondly, the manufacturing of the circuit board and the packaging of the LED light-emitting chip, and thirdly, the assembly of the LED lamp. The most important part in the LED lamp is an LED light-emitting chip, the main body of the LED light-emitting chip is a light-emitting PN junction and mainly comprises an N-type semiconductor, a P-type semiconductor and a light-emitting layer clamped between the N-type semiconductor and the P-type semiconductor, and metal electrodes are respectively arranged on the N-type semiconductor and the P-type semiconductor and emit light after being electrified.
The color of light emitted by the LED light-emitting chip is mainly determined by chip materials, and if the existing LED light-emitting chip is mostly made of gallium nitride semiconductor materials, blue light is emitted. When the blue light LED light-emitting chip is adopted to manufacture other monochromatic LED lamps, fluorescent powder needs to be doped in the packaging step, and light emitted after the fluorescent powder is excited is mixed with the blue light of the LED light-emitting chip to form light rays with other colors.
However, in the prior art, the LED chip is generally a single-color chip, and a single chip cannot obtain a full-color effect, and has the following defects: transferring each chip to the substrate through the die bonder, wherein three chips need to be transferred in each pixel point, and the capacity in unit time is limited; the three independent RGB LED chips limit the minimum pixel point distance of the display screen; and the processing cost of downstream enterprises is higher.
CN106783830B discloses a red green blue three-color chip LED and backlight module, the red green blue three-color chip LED includes: a red light chip; the first bracket is used for fixing the red light chip, and the material of the first bracket has a first thermal resistance value; a green chip; the second support is used for fixing the green light chip, and the material of the second support has a second thermal resistance value; a blue light chip; the third support is used for fixing the blue light chip, and the material of the third support is provided with a third thermal resistance value; wherein the first thermal resistance value is the smallest, the second thermal resistance value is centered, and the third thermal resistance value is the largest. But the single chip of the LED chip cannot obtain full color effect.
CN107123643A discloses blue and green double-chip collocation red phosphor's high colour gamut LED lamp pearl and backlight thereof, including lamp pearl body and backlight body, lamp pearl body specifically comprises LED support, blue light chip, green glow chip and red phosphor powder, the internal distribution of LED support has blue light chip with green glow chip, blue light chip with green glow chip passes through the intermix between red phosphor powder and the encapsulation glue and toasts solidification back encapsulation and is in the inside of LED support, it is a plurality of lamp pearl body evenly distributed is on the formula PCB board of inclining into. But the single chip of the LED chip cannot obtain full color effect.
CN106449620A discloses a long-range quantum dot LED device based on blue, green glow LED chip, include the carrier and locate the LED chip on the carrier, the LED chip includes blue light LED chip and green glow LED chip, the outside of LED chip is provided with a printing opacity base plate, the printing opacity base plate coats on at least one side and has the red quantum dot glue film of one deck, red quantum dot glue film with it has the air to separate between the LED chip. But the single chip of the LED chip cannot obtain full color effect.
Therefore, there is a need in the art to develop an LED chip that can obtain full color effect from a single chip.
SUMMERY OF THE UTILITY MODEL
To prior art in, the unable problem that obtains full-color effect of single LED chip, the utility model aims to provide a full-color quantum dot chip of flip-chip Micro LED. The full-color quantum dot chip of flip-chip Micro LED's single chip not only can obtain full-color luminous, and luminous colour is controllable.
In order to achieve the purpose, the utility model adopts the following technical proposal:
one of the purposes of the utility model is to provide a flip-chip Micro LED full-color quantum dot chip, the flip-chip Micro LED full-color quantum dot chip includes the substrate and sets gradually in first blue light epitaxial layer, first indium tin oxide layer, first luminous quantum dot layer, second blue light epitaxial layer, second indium tin oxide layer, second luminous quantum dot layer, third blue light epitaxial layer, third indium tin oxide layer and DBR reflection stratum on the surface of the substrate;
in the flip-chip Micro LED full-color quantum dot chip, a first N electrode penetrates through a first blue light epitaxial layer from a chip surface far away from a substrate, a second N electrode penetrates through a second blue light epitaxial layer from the chip surface far away from the substrate, a third N electrode penetrates through the third blue light epitaxial layer from the chip surface far away from the substrate, and a fourth P electrode penetrates through the first blue light epitaxial layer from the chip surface far away from the substrate.
The utility model provides a flip-chip Micro LED full-color quantum dot chip (Micro LED chip), can form red bluish green's light-emitting structure on single LED chip, need not to set up the RGB array, can transfer efficiency and yield by a wide margin to a huge extent; the single chip can not only complete full-color light emission, but also save the wafer area and the chip cost, and is beneficial to large-scale production of downstream enterprises; the additional quantum material can prevent the display effect of the chip from being influenced by the fluctuation of current.
The utility model discloses add quantum dot luminescent material in blue light chip's stromatolite, make it produce red green blue three-color light. The structure of the inverted Micro LED full-color quantum dot chip of the utility model enables the three-color chip to be combined into one chip, thereby reducing the dot spacing of the display screen and facilitating the batch transfer of the three-color chip by using a huge transfer technology; and simultaneously, the utility model discloses an in the full-color quantum dot chip of flip-chip Micro LED, set up three negative pole and a public positive pole, can realize on a chip that red, green, blue are photochromic luminous alone, or two kinds of photochromic simultaneous lighting, or the luminous effect of three kinds of photochromic simultaneous lighting realize luminous photochromic adjustable. If the first light-emitting quantum dot layer is a red light-emitting layer and the second light-emitting quantum dot layer is a green light-emitting layer, the first N electrode is a red N electrode, the second N electrode is a green N electrode, the third N electrode is a blue N electrode, and the fourth P electrode is a common anode. The utility model discloses do not specifically limit to the positional relationship of first N electrode, second N electrode, third N electrode and fourth P electrode, the skilled person in the art can select according to actual experience, exemplary if: the distance between the electrodes is 20 to 50 μm.
The utility model discloses well DBR reflection stratum sclerosis is handled, can prevent that the chip bottom from being pricked by the thimble when the solid brilliant of chip, can also play the effect increase light-emitting efficiency of plane of reflection.
The utility model discloses in do not do specifically and restrict to the thickness of each layer in the full-color quantum dot chip structure of flip-chip Micro LED, the technical personnel in the field can select according to actual experience, exemplary if: the thickness of the first blue light epitaxial layer is 50-100 nm, the thickness of the first indium tin oxide layer is 20-30 nm, the thickness of the first light emitting quantum dot layer is 15-30 nm, the thickness of the second blue light epitaxial layer is 50-100 nm, the thickness of the second indium tin oxide layer is 20-30 nm, the thickness of the second light emitting quantum dot layer is 15-30 nm, the thickness of the third blue light epitaxial layer is 50-100 nm, the thickness of the third indium tin oxide layer is 20-30 nm, and the thickness of the DBR reflecting layer is 15-20 nm.
Preferably, the compositions of the first blue light epitaxial layer, the second blue light epitaxial layer and the third blue light epitaxial layer each independently include: the blue light N-type gallium nitride layer, the blue light active layer and the blue light P-type gallium nitride layer are arranged in sequence.
The first blue light epitaxial layer is provided with a blue light N-type gallium nitride layer, a blue light active layer and a blue light P-type gallium nitride layer on the surface of the substrate in sequence, and similarly, the second blue light epitaxial layer and the third blue light epitaxial layer.
The utility model discloses do not specifically prescribe a limit to the thickness on blue light N type gallium nitride layer, blue light active layer and blue light P type gallium nitride layer, technical personnel in the field can select according to actual experience, exemplary if: the thickness of the blue light N-type gallium nitride layer is 10-20 nm, the thickness of the blue light active layer is 5-15 nm, and the thickness of the blue light P-type gallium nitride layer is 10-20 nm.
Preferably, the blue active layer includes a blue multiple quantum well material structure.
Preferably, the first blue epitaxial layer, the second blue epitaxial layer and the third blue epitaxial layer all comprise: the blue light N-type GaN layer, the blue light active layer and the blue light P-type GaN layer.
Preferably, the first N electrode penetrates through the blue light N-type gallium nitride layer in the first blue light epitaxial layer from the surface of the chip far away from the substrate.
Preferably, the second N electrode penetrates through the blue light N-type gallium nitride layer in the second blue light epitaxial layer from the surface of the chip far away from the substrate.
Preferably, the third N electrode penetrates through the blue light N-type gallium nitride layer in the third blue light epitaxial layer from the chip surface far away from the substrate.
Preferably, the fourth P-electrode penetrates through the blue light P-type gallium nitride layer in the first blue light epitaxial layer from the surface of the chip far away from the substrate.
Preferably, a first transparent bonding material layer is further included between the first light-emitting quantum dot layer and the second blue light epitaxial layer.
Preferably, a second transparent bonding material layer is further included between the second light-emitting quantum dot layer and the third blue epitaxial layer.
Preferably, the composition of the first transparent bonding material layer and the second transparent bonding material layer is: a silicon oxide layer formed on the substrate at 100-400 deg.C (e.g., 150 deg.C, 200 deg.C, 250 deg.C, 300 deg.C or 350 deg.C) and 2.0EIntroducing gaseous NH under the condition of 3.0Mpa4OH is subjected to surface treatment to obtain a material layer.
Transparent bonding material layer is used for the contact surface of chip about the transmittance is used for being passed through and is connected, and silicon oxide material is after surface treatment, can bond rapidly with the contact surface of chip under the high temperature.
Preferably, the first light-emitting quantum dot layer is a red light quantum dot layer, and the material composition of the first light-emitting quantum dot layer is a PbS quantum dot material in a red light waveband.
Preferably, the second luminescent quantum dot layer is a green light quantum dot layer, and the material composition of the second luminescent quantum dot layer is a CdSe quantum dot material in a green light waveband.
Preferably, the substrate is a sapphire substrate.
Preferably, the flip Micro LED full-color quantum dot chip is a miniLED chip.
The structure of the inverted Micro LED full-color quantum dot chip comprises a substrate, and a first blue light epitaxial layer, a first indium tin oxide layer, a first light emitting quantum dot layer, a first transparent bonding material layer, a second blue light epitaxial layer, a second indium tin oxide layer, a second light emitting quantum dot layer, a second transparent bonding material layer, a third blue light epitaxial layer, a third indium tin oxide layer and a DBR (distributed Bragg Reflector) layer which are sequentially arranged on the surface of the substrate;
among the full-color quantum dot chip of flip-chip Micro LED, first N electrode runs through the blue light N type gallium nitride layer in the first blue light epitaxial layer from the chip surface of keeping away from the substrate, the blue light N type gallium nitride layer in the second blue light epitaxial layer is run through from the chip surface of keeping away from the substrate to the second N electrode, the blue light N type gallium nitride layer in the third blue light epitaxial layer is run through from the chip surface of keeping away from the substrate to the third N electrode, the blue light P type gallium nitride layer in the first blue light epitaxial layer is run through from the chip surface of keeping away from the substrate to the fourth P electrode.
The utility model discloses a preparation method of flip-chip Micro LED full-color quantum dot chip, including following step:
(1) preparing a first blue light epitaxial layer on a substrate, wherein the preparation process of the first blue light epitaxial layer comprises the following steps: preparing a blue light N-type gallium nitride layer on a substrate, preparing a blue light active layer on the surface of the blue light N-type gallium nitride layer, and preparing a blue light P-type gallium nitride layer on the surface of the blue light active layer; then sequentially preparing a first indium tin oxide layer and a red light quantum dot layer on the first blue light epitaxial layer;
(2) sequentially preparing a first transparent bonding material layer and a second blue light epitaxial layer on the red light quantum dot layer, wherein the preparation process of the second blue light epitaxial layer comprises the following steps: preparing a blue light N-type gallium nitride layer on the red light quantum dot layer, preparing a blue light active layer on the surface of the blue light N-type gallium nitride layer, and preparing a blue light P-type gallium nitride layer on the surface of the blue light active layer; then sequentially preparing a second indium tin oxide layer and a green light quantum dot layer on the second blue light epitaxial layer;
(3) sequentially preparing a second transparent bonding material layer and a third blue light epitaxial layer on the green light quantum dot layer, wherein the preparation process of the third blue light epitaxial layer is as follows: preparing a blue light N-type gallium nitride layer on the green light quantum dot layer, preparing a blue light active layer on the surface of the blue light N-type gallium nitride layer, and preparing a blue light P-type gallium nitride layer on the surface of the blue light active layer; then sequentially preparing a third indium tin oxide layer and a DBR (distributed Bragg reflector) reflecting layer on the third blue light epitaxial layer to obtain an LED wafer;
(4) etching the LED wafer, and penetrating the LED wafer to the blue light N-type gallium nitride layer in the first blue light epitaxial layer from the surface of the chip far away from the substrate to form a first hole; penetrating the blue light N-type gallium nitride layer in the second blue light epitaxial layer from the surface of the chip far away from the substrate to form a second hole; penetrating the blue light N-type gallium nitride layer in the third blue light epitaxial layer from the surface of the chip far away from the substrate to form a third hole; then penetrating the blue light P-type gallium nitride layer in the first blue light epitaxial layer from the surface of the chip far away from the substrate to form a fourth hole;
(5) forming a passivation layer on the surface of the LED wafer obtained in the step (4), in the first hole, in the second hole, in the third hole and in the fourth hole; etching the passivation layer, and forming a first negative electrode hole, a second negative electrode hole, a third negative electrode hole and a fourth positive electrode hole through the passivation layer and corresponding to the first hole, the second hole, the third hole and the fourth hole;
(6) and (5) depositing metal layers in the first electrode hole, the second electrode hole, the third electrode hole and the fourth positive electrode hole in the LED wafer obtained in the step (5), so as to obtain the flip Micro LED full-color quantum dot chip.
Compared with the prior art, the utility model discloses following beneficial effect has:
(1) the utility model provides a flip-chip Micro LED full-color quantum dot chip (Micro LED chip), can form red bluish green's light-emitting structure on single LED chip, need not to set up the RGB array, can transfer efficiency and yield by a wide margin to a huge extent; the single chip can not only complete full-color light emission, but also save the wafer area and the chip cost, and is beneficial to large-scale production of downstream enterprises; the additional quantum material can prevent the display effect of the chip from being influenced by the fluctuation of current.
(2) The utility model discloses a through in the full-color quantum dot chip of flip-chip Micro LED, set up three negative pole and a public positive pole, can realize red, green, blue luminous of light color alone on a chip, or two kinds of light colors are luminous simultaneously, or the luminous effect of three kinds of light colors simultaneously, realize luminous light color adjustable.
Drawings
Fig. 1 is a front view of a flip-chip Micro LED full-color quantum dot chip structure provided in embodiment 1 of the present invention;
fig. 2 is a left side view of a flip-chip Micro LED full-color quantum dot chip structure provided in embodiment 1 of the present invention;
fig. 3 is a top view of a flip-chip Micro LED full-color quantum dot chip structure provided in embodiment 1 of the present invention;
the LED chip comprises a substrate 1, a substrate 2, a first blue light epitaxial layer, an indium tin oxide layer 3, a first luminescent quantum dot layer 4, a first transparent bonding material layer 5, a second blue light epitaxial layer 6, an indium tin oxide layer 7, a second luminescent quantum dot layer 8, a second transparent bonding material layer 9, a third blue light epitaxial layer 10, an indium tin oxide layer 11, an indium tin oxide layer 12, a DBR (distributed Bragg reflector) reflective layer 13, a fourth P electrode 13, a first N electrode 14, a second N electrode 15 and a third N electrode 16.
Detailed Description
To facilitate understanding of the present invention, the present invention has the following embodiments. It should be understood by those skilled in the art that the described embodiments are merely provided to assist in understanding the present invention and should not be construed as specifically limiting the present invention.
Example 1
In this embodiment, the flip Micro LED full-color quantum dot chip structure is shown in fig. 1 in front view, fig. 2 in left view, and fig. 3 in top view, and includes a substrate 1, a first blue epitaxial layer 2, a first ito layer 3, a first luminescent quantum dot layer 4, a first transparent bonding material layer 5, a second blue epitaxial layer 6, a second ito layer 7, a second luminescent quantum dot layer 8, a second transparent bonding material layer 9, a third blue epitaxial layer 10, a third ito layer 11, a DBR reflective layer 12, a fourth P electrode 13, a first N electrode 14, a second N electrode 15, and a third N electrode 16.
The substrate 1 in this embodiment is a sapphire substrate having a thickness of 100 μm; the first blue light epitaxial layer 2 comprises a blue light N-type gallium nitride layer with the thickness of 20nm, a blue light active layer with the thickness of 10nm and a blue light P-type gallium nitride layer with the thickness of 10nm, which are arranged on the surface of the substrate 1, wherein the blue light active layer is made of a blue light multi-quantum well; the thicknesses of the first indium tin oxide layer 3, the second indium tin oxide layer 7 and the third indium tin oxide layer 11 are 20 nm; the thickness of the first luminescent quantum dot layer 4 is 15nm, and the material is a PbS quantum dot material with a red light wave band; the thickness of the second luminescent quantum dot layer 8 is 15nm, and the material is CdSe quantum dot material with green light wave band; the first transparent bonding material layer 5 and the second transparent bonding material layer 9 have a thickness of 5nm, and are surface-treated silicon oxide layers (at 300 deg.C and 2.5Mpa, gaseous NH is introduced4OH surface treatment); the thickness of the DBR reflective layer 12 is 20 nm; the thickness and material composition of the second blue light epitaxial layer 6 and the third blue light epitaxial layer 10 are the same as those of the first blue light epitaxial layer 2.
In this embodiment, the first N electrode 14 penetrates through the blue light N-type gallium nitride layer in the first blue light epitaxial layer from the surface of the chip far from the substrate to obtain a red light N electrode; the second N electrode 15 penetrates through the blue light N-type gallium nitride layer in the second blue light epitaxial layer from the surface of the chip far away from the substrate to obtain a green light N pole; the third N electrode 16 penetrates through the blue light N-type gallium nitride layer in the third blue light epitaxial layer from the surface of the chip far away from the substrate to obtain a blue light N pole; the fourth P electrode 13 penetrates through the blue light P-type gallium nitride layer in the first blue light epitaxial layer from the surface of the chip far away from the substrate to obtain a common anode.
Comparative example 1
The difference from embodiment 1 is that the DBR reflective layer 12 is not provided.
In comparative example 1, the DBR reflective layer 12 was not provided, and the obtained chip effect was inferior to that of the chip in example 1.
The applicant states that the present invention is illustrated by the above embodiments, but the present invention is not limited to the above detailed process equipment and process flow, i.e. the present invention is not meant to be implemented by relying on the above detailed process equipment and process flow. It should be clear to those skilled in the art that any improvement of the present invention, to the equivalent replacement of each raw material of the present invention, the addition of auxiliary components, the selection of specific modes, etc., all fall within the protection scope and disclosure scope of the present invention.
Claims (10)
1. The flip Micro LED full-color quantum dot chip is characterized by comprising a substrate, and a first blue light epitaxial layer, a first indium tin oxide layer, a first light emitting quantum dot layer, a second blue light epitaxial layer, a second indium tin oxide layer, a second light emitting quantum dot layer, a third blue light epitaxial layer, a third indium tin oxide layer and a DBR (distributed Bragg reflector) layer which are sequentially arranged on the surface of the substrate;
the flip Micro LED full-color quantum dot chip further comprises a first N electrode, a second N electrode, a third N electrode and a fourth P electrode, wherein the first N electrode penetrates through the first blue light epitaxial layer from the surface of the chip far away from the substrate, the second N electrode penetrates through the second blue light epitaxial layer from the surface of the chip far away from the substrate, the third N electrode penetrates through the third blue light epitaxial layer from the surface of the chip far away from the substrate, and the fourth P electrode penetrates through the first blue light epitaxial layer from the surface of the chip far away from the substrate.
2. The flip-chip Micro LED full-color quantum dot chip of claim 1, wherein the composition of the first, second and third blue epitaxial layers each independently comprises: the blue light N-type gallium nitride layer, the blue light active layer and the blue light P-type gallium nitride layer are arranged in sequence;
the blue light active layer comprises a blue light multiple quantum well material structure.
3. The flip-chip Micro LED full-color quantum dot chip of claim 1, wherein the first, second and third blue epitaxial layers all comprise: the blue light N-type gallium nitride layer, the blue light active layer and the blue light P-type gallium nitride layer;
the first N electrode penetrates through the blue light N-type gallium nitride layer in the first blue light epitaxial layer from the surface of the chip far away from the substrate;
the second N electrode penetrates through the blue light N-type gallium nitride layer in the second blue light epitaxial layer from the surface of the chip far away from the substrate;
the third N electrode penetrates through the blue light N-type gallium nitride layer in the third blue light epitaxial layer from the surface of the chip far away from the substrate;
and the fourth P electrode penetrates through the blue light P-type gallium nitride layer in the first blue light epitaxial layer from the surface of the chip far away from the substrate.
4. The flip-chip Micro LED full-color quantum dot chip of claim 1, further comprising a first transparent bonding material layer between the first light emitting quantum dot layer and the second blue light epitaxial layer;
and a second transparent bonding material layer is arranged between the second light-emitting quantum dot layer and the third blue light epitaxial layer.
5. The flip-chip Micro LED full-color quantum dot chip of claim 4, wherein the first and second transparent bonding material layers have a composition of: silicon oxideIntroducing gaseous NH into the layer at 100-400 ℃ and 2.0-3.0 Mpa4OH is subjected to surface treatment to obtain a material layer.
6. The flip-chip Micro LED full-color quantum dot chip of claim 1, wherein the first light emitting quantum dot layer is a red light quantum dot layer, and the material composition of the first light emitting quantum dot layer is a PbS quantum dot material in a red light band.
7. The flip-chip Micro LED full-color quantum dot chip of claim 1, wherein the second light emitting quantum dot layer is a green light quantum dot layer, and the material composition thereof is a CdSe quantum dot material in a green light band.
8. The flip-chip Micro LED full-color quantum dot chip of claim 1, wherein the substrate is a sapphire substrate.
9. The flip-chip Micro LED full-color quantum dot chip of claim 1, wherein the flip-chip Micro LED full-color quantum dot chip is a miniLED chip.
10. The flip-chip Micro LED full-color quantum dot chip of claim 1, wherein the structure of the flip-chip Micro LED full-color quantum dot chip comprises a substrate, and a first blue light epitaxial layer, a first indium tin oxide layer, a first light emitting quantum dot layer, a first transparent bonding material layer, a second blue light epitaxial layer, a second indium tin oxide layer, a second light emitting quantum dot layer, a second transparent bonding material layer, a third blue light epitaxial layer, a third indium tin oxide layer and a DBR reflective layer sequentially disposed on the surface of the substrate;
among the full-color quantum dot chip of flip-chip Micro LED, first N electrode runs through the blue light N type gallium nitride layer in the first blue light epitaxial layer from the chip surface of keeping away from the substrate, the blue light N type gallium nitride layer in the second blue light epitaxial layer is run through from the chip surface of keeping away from the substrate to the second N electrode, the blue light N type gallium nitride layer in the third blue light epitaxial layer is run through from the chip surface of keeping away from the substrate to the third N electrode, the blue light P type gallium nitride layer in the first blue light epitaxial layer is run through from the chip surface of keeping away from the substrate to the fourth P electrode.
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| CN111326621A (en) * | 2020-04-03 | 2020-06-23 | 深圳雷曼光电科技股份有限公司 | Flip Micro LED full-color quantum dot chip, and preparation method and application thereof |
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| CN111326621A (en) * | 2020-04-03 | 2020-06-23 | 深圳雷曼光电科技股份有限公司 | Flip Micro LED full-color quantum dot chip, and preparation method and application thereof |
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