CN208689325U

CN208689325U - A kind of quantum dot backlight module

Info

Publication number: CN208689325U
Application number: CN201721904990.7U
Authority: CN
Inventors: 左瑜
Original assignee: Xian Zhisheng Ruixin Semiconductor Technology Co Ltd
Current assignee: Xian Zhisheng Ruixin Semiconductor Technology Co Ltd
Priority date: 2017-12-29
Filing date: 2017-12-29
Publication date: 2019-04-02
Anticipated expiration: 2027-12-29

Abstract

The utility model relates to a kind of quantum dot backlight module, the backlight module includes: LED light source；Quantum dot light emitting layer is set on the LED light source, for receiving the excitation of the LED light source to form the light of designated color；Dielectric layer is set on the quantum dot light emitting layer.Backlight module provided by the utility model improves the integration of product, reduces volume, advantageously reduce the thickness of display module, and do not sacrifice the color gamut space range of display module by the way that the light of multiple color is arranged in monolithic chip.

Description

A kind of quantum dot backlight module

Technical field

The utility model relates to field of liquid crystal display, in particular to a kind of quantum dot backlight module and display module.

Background technique

Liquid crystal display device (Liquid Crystal Display, abbreviation LCD), belongs to one kind of flat-panel screens, extensively It is general to be applied in the products such as television set, computer, smart phone, mobile phone, automobile navigation apparatus, e-book.Liquid crystal display device Have the advantages that power consumption is low, small in size, radiation is low and gradually replaces cathode-ray tube (Cathode Ray Tube, abbreviation CRT) Display device.

Currently in order to improving the colour gamut of the display of liquid crystal display, the light emitting diode (Light of high colour gamut is generally used Emitting Diode, LED), which is generally made of blue chip and/or UV chip, can also use quantum dot (Quantum Dot, QD) improves colour gamut as a part of backlight module.And QD is usually adopted as a part of backlight module With quantum fluorescent tube (QD tube), quantum dot film (QD film) or quantum light emitting diode (QD-LED) etc..Wherein QD film Due to becoming the preferred of the high colour gamut display panel of small size with technology relative maturity, the more low advantage of thickness.

It is current in the prior art, generally independent multiple blue chips, ultraviolet chip or combinations thereof, cooperate quantum dot As LED backlight mould group, implementation area at high cost is big, is unfavorable for liquid crystal display device to low cost and ultra-thin direction Development, reduce the market competitiveness and occupation rate of manufacturer.

Utility model content

To solve technological deficiency of the existing technology and deficiency, the utility model proposes a kind of quantum dot backlight module, Include:

LED light source；

Quantum dot light emitting layer is set on the LED light source, specified to be formed for receiving the excitation of the LED light source The light of color；

Dielectric layer is set on the quantum dot light emitting layer.

Further include the first protective layer in a kind of embodiment of the utility model, is set to the LED light source and institute It states between quantum dot light emitting layer, for completely cutting off air and moisture for the LED light source.

In a kind of embodiment of the utility model, further includes metal wire grid layer, be set on the dielectric layer.

In a kind of embodiment of the utility model, the metal wire grid layer includes multiple strip metal lines, is arranged in On the dielectric layer.

In a kind of embodiment of the utility model, the dielectric layer includes SiO₂、MgO、Si₃N₄、 TiO₂、Ta₂O₅In Any one or it is a variety of

In a kind of embodiment of the utility model, the quantum dot backlight module is for generating feux rouges, green light, blue light And yellow light.

In a kind of embodiment of the utility model, the LED light source includes three kinds of feux rouges, green light, blue light primary lights Source, the quantum dot light emitting layer include gold-tinted quantum dot.

In a kind of embodiment of the utility model, the quantum dot light emitting layer includes hyalomere and yellow light portion, wherein The hyalomere is used to transmit the light that the LED light source issues, and the yellow light portion includes gold-tinted quantum dot, described for receiving The light that LED light source issues is to inspire yellow light.

The utility model also provides a kind of display module, including display, and the display includes former any implementation Backlight module in mode.

Backlight module provided by the utility model improves product by the way that the light of multiple color is arranged in monolithic chip Integration, reduce volume, advantageously reduce the thickness of display module, and do not sacrifice the color gamut space model of display module It encloses.

Detailed description of the invention

Below in conjunction with attached drawing, specific embodiment of the present utility model is described in detail.

Fig. 1 is a kind of quantum dot back light module unit structure schematic diagram provided by the utility model；

Fig. 2 is another quantum dot back light module unit structure schematic diagram provided by the utility model；

Fig. 3 is another quantum dot back light module unit structure schematic diagram provided by the utility model；

Fig. 4 is another quantum dot back light module unit structure schematic diagram provided by the utility model；

Fig. 5 is yet a further quantum dot back light module unit structure schematic diagram provided by the utility model；

Fig. 6 is still another quantum dot back light module unit structure schematic diagram provided by the utility model；

Fig. 7 is a kind of structural schematic diagram of LED chip provided by the embodiment of the utility model；

Fig. 8 is a kind of structural schematic diagram of blue light epitaxial layer provided by the embodiment of the utility model；

Fig. 9 is a kind of structural schematic diagram of first active layer provided by the embodiment of the utility model；

Figure 10 is a kind of structural schematic diagram of feux rouges epitaxial layer provided by the embodiment of the utility model；

Figure 11 is a kind of structural schematic diagram of second active layer provided by the embodiment of the utility model；

Figure 12 is a kind of structural schematic diagram of green light epitaxial layer provided by the embodiment of the utility model；

Figure 13 is a kind of structural schematic diagram of first active layer provided by the embodiment of the utility model.

Specific embodiment

Further detailed description, but the embodiment party of the utility model are done to the utility model combined with specific embodiments below Formula is without being limited thereto.

Embodiment one

Referring to Figure 1, Fig. 1 is a kind of quantum dot back light module unit structure schematic diagram provided by the utility model comprising:

LED light source；

Dielectric layer is set on the quantum dot light emitting layer.

Fig. 2 is referred to, Fig. 2 is another quantum dot back light module unit structure schematic diagram provided by the utility model, is also wrapped The first protective layer is included, is set between the LED light source and the quantum dot light emitting layer, it is empty for completely cutting off for the LED light source Gas and moisture.

Contain quantum dot in the quantum dot light emitting layer, the quantum dot is easy to be influenced and lose by air and moisture Effect.By first protective layer, quantum point can be reduced to a certain extent and the phenomenon that water oxygen failure occurs.In a kind of implementation In mode, the quantum dot can be quantum dot fluorescence powder.

Fig. 3 is referred to, Fig. 3 is another quantum dot back light module unit structure schematic diagram provided by the utility model, is also wrapped Metal wire grid layer is included, is set on the dielectric layer.

Fig. 4 is referred to, Fig. 4 is another quantum dot back light module unit structure schematic diagram provided by the utility model, metal wire Grid layer includes multiple strip metal lines, is arranged on the dielectric layer.

The metal wire can periodically be intervally arranged on the dielectric layer, and the metal wire grid layer is used for through vibration Direction is moved perpendicular to the TM polarised light of institute's metal wire, and is parallel to the TE polarised light of the metal wire for reflection direction. According to actual needs, the TE polarised light reflected can also be used to that the quantum dot light emitting layer be excited to shine.

It in actual use, include TM polarised light of the direction of vibration perpendicular to the metal wire through the white light of dielectric layer And polarization direction is parallel to the TE polarised light of the metal wire.TM polarised light light transmission of the polarization direction perpendicular to the metal wire The metal wire grid layer, and polarization direction is parallel to the TE polarised light of the metal wire by the metal line reflection.By metal wire When the TE polarised light of reflection passes through the quantum dot light emitting layer, the excitation quantum dot light emitting layer hair can according to need Light, to improve the luminous efficiency of the quantum dot light emitting layer.It is worth noting that the metal wire is not backlight module institute Necessary component can remove metal wire grid layer in practical application.And when needing using metal wire grid layer, the dielectric layer and The metal wire grid layer forms reflection-type polarizing layer, so that panel vendor no matching is required respective reflective polaroid, Ke Yiti The stability of high backlight module coloration.

In one embodiment, the metal wire grid layer include in Al, Ag, Au any one or it is multiple.

In one embodiment, the period of the metal wire is 20~500nm, and herein, the period refers to adjacent two The width of dielectric layer between metal wire adds the sum of the width of a metal line.Further, the duty ratio of the metal wire It is 0.1~0.9, duty ratio herein refers to that the width of the metal wire accounts for the ratio in the period of the metal wire.Preferably, institute The height for stating metal wire is 100~500nm.

In one embodiment, the dielectric layer includes SiO₂、MgO、Si₃N₄、TiO₂、Ta₂O₅In any one or Person is a variety of.

In one embodiment, the dielectric layer is transparent, and on the one hand the dielectric layer is used for and the metal wire Metal wire in grid layer forms the reflection-type polarizing layer of backlight module, on the other hand for completely cut off the quantum dot light emitting layer not by There is the phenomenon that water oxygen failure to avoid the quantum dot in the quantum dot light emitting layer in the influence of air and moisture.

Further, Fig. 5 is referred to, Fig. 5 is that yet a further quantum dot back light module unit structure provided by the utility model shows It is intended to, backlight module further includes the second protective layer, is set between the quantum dot light emitting layer and the dielectric layer.

Described second it is protective layer used do not influenced by air and moisture in completely cutting off the quantum dot light emitting layer, to avoid described There is the phenomenon that water oxygen failure in quantum dot fluorescence powder in quantum dot light emitting layer.

Further, in order to realize the range completeness of color and space, increase the display effect of display module, the quantum Point backlight module is for generating feux rouges, green light, blue light and yellow light.Four colors based on RGBY show that picture level is clearly more demarcated, Picture is more fully apparent from.

Further, on the basis of the above embodiment, the LED light source includes three kinds of feux rouges, green light, blue light primary colours Light source, the quantum dot light emitting layer include gold-tinted quantum dot.

Further, the quantum dot light emitting layer includes hyalomere and yellow light portion, wherein the hyalomere is for transmiting institute The light of LED light source sending is stated, the yellow light portion includes gold-tinted quantum dot, for receiving the light of the LED light source sending to excite Yellow light out.

In present embodiment, the LED light source includes a three-color LED chip, this three-color LED chip includes feux rouges The light emitting module of these three different colours is integrated in single chip LED core by light emitting module, green luminescence module and blue light emitting module In piece, multi-plate chip bring increased costs are avoided, the defect that volume increases, while yellow light is generated by yellow light electronics point, Realize the completeness of color gamut space.Specifically, Fig. 6 is referred to, Fig. 6 is still another quantum dot back provided by the utility model Optical mode group structural schematic diagram.

The utility model also provides a kind of display module, including display, and the display includes that any of the above is implemented Backlight module in mode.

In one embodiment, which successively includes first electrode plate, layer of liquid crystal molecule, second electrode plate, coloured silk Coloured light resistance layer, upper substrate layer, polaroid, first electrode layer are connect with the backlight module that above embodiments provide, which can Display for flat image or stereo-picture.

Embodiment two

The utility model provides one kind based on the trichromatic LED chip of RBG, which produces RGB three primary colors, It is highly suitable in the quantum dot backlight module in embodiment.

Fig. 7 is referred to, Fig. 7 is a kind of structural schematic diagram of LED chip provided by the embodiment of the utility model, the LED core Piece 10 includes:

Conductive substrates 11；

Reflective layer 12 is set in the conductive substrates 11；

First electrode 13 is set on the reflective layer 12；

Blue light epitaxial layer 14, feux rouges epitaxial layer 15 and green light epitaxial layer 16 are all set on the reflective layer 13；

Separation layer 17 is set on the reflective layer 13 so that the blue light epitaxial layer 14, feux rouges epitaxial layer 15 and green light It is mutually isolated between epitaxial layer 16；

The second electrode 18 is respectively arranged at the blue light epitaxial layer 14, feux rouges epitaxial layer 15 and green light epitaxial layer 16 On；

The passivation layer 19 be covered in the blue light epitaxial layer 14, feux rouges epitaxial layer 15, green light epitaxial layer 16 and it is described every On absciss layer 17.

Further, Fig. 8 is referred to, Fig. 8 is that a kind of structure of blue light epitaxial layer provided by the embodiment of the utility model is shown It is intended to, which forms blue light LED structure；Specifically, the blue light epitaxial layer 14 includes: first buffer layer 141, first Stabilized zone 142, First Transition layer 143, the first active layer 144, the first barrier layer 145 and the first contact layer 146；

First contact layer 146, first barrier layer 145, first active layer 144, the First Transition layer 143, first stabilized zone 142 and the first buffer layer 141 are stacked gradually refers in 13 upper surface first of first electrode Determine region.

Wherein, first buffer layer 141 is N-type GaN material, with a thickness of 3000~5000nm, preferably 4000nm；

First stabilized zone 142 is N-type GaN material, with a thickness of 500~1500nm, preferably 1000nm；

First Transition layer 143 is N-type GaN material, with a thickness of 200~1000nm, preferably 400nm, doping concentration is 1 × 10¹⁸~5 × 10¹⁹cm^-3, preferably 1 × 10¹⁹cm^-3；

Fig. 9 is referred to, Fig. 9 is a kind of structural schematic diagram of first active layer provided by the embodiment of the utility model；This One active layer 144 is the first multiplet formed by the first InGaN Quantum Well 1441 and the first GaN potential barrier 1442, this first First InGaN Quantum Well (1441) described in multiplet and the first GaN potential barrier (1442) alternately stacked period are 8~30, Preferably 20；Wherein, the first InGaN Quantum Well 1441 with a thickness of 1.5~3.5nm, preferably 2.8nm；First GaN potential barrier 1442 with a thickness of 5~10nm, preferably 5nm；The content of In contains according to depending on optical wavelength in first InGaN Quantum Well 1441 It is longer to measure higher optical wavelength, usually 10~20%；

First barrier layer 145 with a thickness of 10~40nm, preferably 20nm；

First contact layer 146 with a thickness of 100~300nm, preferably 200nm.

Further, 0, Figure 10 is a kind of structure of feux rouges epitaxial layer provided by the embodiment of the utility model referring to Figure 1 Schematic diagram, the feux rouges epitaxial layer form red-light LED structure；Specifically, the feux rouges epitaxial layer 15 includes: second buffer layer 151, Two stabilized zones 152, the second transition zone 153, the second active layer 154, the second barrier layer 155 and the second contact layer 156；

Second contact layer 156, second barrier layer 155, second active layer 154, second transition zone 153, second stabilized zone 152 and the second buffer layer 151 are stacked gradually refers in 13 upper surface second of first electrode Determine region.

Wherein, second buffer layer 151 is N-type GaN material, with a thickness of 2000~3000nm, preferably 2500nm；

Second stabilized zone 152 is N-type GaAs material, with a thickness of 1000~2000nm, preferably 1500nm, doping concentration It is 1 × 10¹⁷~1 × 10¹⁸cm^-3, preferably 5 × 10¹⁷cm^-3；

Second transition zone 153 is N-type GaAs material, with a thickness of 500~1000nm, preferably 700nm, doping concentration 1 ×10¹⁸~5 × 10¹⁹cm^~3, preferably 1 × 10¹⁹cm^-3；

1, Figure 11 is a kind of structural schematic diagram of second active layer provided by the embodiment of the utility model referring to Figure 1；It should Second active layer 154 is the second multiplet formed by GalnP Quantum Well 1541 and A1GaInP potential barrier 1542, and second is multiple GalnP Quantum Well described in structure 1541 and the alternately stacked period of A1GaInP potential barrier 1542 are 8~30, preferably 20；Its In, GalnP Quantum Well 1541 with a thickness of 2~10nm, preferably 7nm；A1GaInP potential barrier with a thickness of 5~10nm, preferably For 7nm；A1 content is that 10~40% (for Al content according to depending on optical wavelength, the higher optical wavelength of content is more in A1GaInP potential barrier It is long)；

Second barrier layer 155 is p-type A1GaInP material, with a thickness of 10~500nm, preferably 100nm, doping concentration 1 ×10¹⁷~1 × 10¹⁹cm^-3, preferably 1 × 10¹⁸cm^-3；

Second contact layer 156 is p-type GaAs material, with a thickness of 100~500nm, preferably 150nm, doping concentration is 1 × 10¹⁷~1 × 10¹⁹cm^-3, preferably 1 × 10¹⁸cm^-3。

Further, 2, Figure 12 is a kind of structure of green light epitaxial layer provided by the embodiment of the utility model referring to Figure 1 Schematic diagram；The green light epitaxial layer 16 includes: that third buffer layer 161, third stabilized zone 162, third transition zone 163, third are active Layer 164, third barrier layer 165 and third contact layer 166；

The third contact layer 166, the third barrier layer 165, the third active layer 164, the third transition zone 163, the third stabilized zone 162 and the third buffer layer 161 are stacked gradually refers in the 13 upper surface third of first electrode Determine region.

Wherein, third buffer layer 161 is N-type GaN material, with a thickness of 3000~5000nm, preferably 4000nm；

Third stabilized zone 162 is N-type GaN material, with a thickness of 500~1500nm, preferably 1000nm；

Third transition zone 163 is N-type GaN material, with a thickness of 200~1000nm, preferably 400nm, doping concentration is 1 × 10¹⁸~5 × 10¹⁹cm^-3, preferably 1 × 10¹⁹cm^-3；

3, Figure 13 is a kind of structural schematic diagram of third active layer provided by the embodiment of the utility model referring to Figure 1；It should Third active layer 164 is the third multiplet formed by the second InGaN Quantum Well 1641 and the 2nd GaN potential barrier 1642, this 2nd InGaN Quantum Well 1641 described in three multiplets and the alternately stacked period of the 2nd GaN potential barrier 1642 are 8~30, excellent It is selected as 20；Wherein, the 2nd InGaN Quantum Well 1641 with a thickness of 1.5~3.5nm, preferably 2.8nm；2nd GaN potential barrier 1642 with a thickness of 5~10nm, preferably 5nm；The content of In contains according to depending on optical wavelength in 2nd InGaN Quantum Well 1641 It is longer to measure higher optical wavelength, usually 20~30%；

Third barrier layer 165 with a thickness of 10~40nm, preferably 20nm；

Third contact layer 166 with a thickness of 100~300nm, preferably 200nm.

Further, the material that conductive substrates 11 should select conductivity high, with a thickness of 500~2500nm.Optionally, described Conductive substrates 11 are conduction Si piece, aluminium sheet or copper sheet.Wherein, conductive Si piece should be heavy doping silicon wafer, to improve its conductivity.

Further, the material that the reflective layer 12 should select reflective good, with a thickness of 300~1500nm.It is optional Ground, 12 material of reflective layer are Ni, Pb, Ni/Pb alloy or Al.

Further, separation layer 15 and 17 material of passivation layer are chosen as earth silicon material；Wherein, the thickness of separation layer 15 Degree be 50~150nm, passivation layer 17 with a thickness of 300~800nm.

Further, first electrode 13 and second electrode 18 should select the material to conduct electricity very well, for example, Ni, Au or The materials such as Ni/Au alloy.Under the conditions of annealing process, above-mentioned metal material and semiconductor material react and form metallic silicon Compound, the metal silicide and semiconductor material contact berrier are small, are easily formed Ohmic contact, can reduce contact resistance；

In the present solution, the anode that first electrode 13 connects altogether as blue-ray LED, red-light LED and green light LED；Second electrode 18 respectively as blue-ray LED, red-light LED and green light LED cathode.

In practical applications, depending on the quantity of blue-ray LED, red-light LED and green light LED can according to need.

Light emitting diode (LED) chip with vertical structure provided in this embodiment based on GaN material, by forming blue light, red on a single chip Light and green light, it is possible to reduce the dosage of fluorescent powder when the later period encapsulates, and color temperature adjustment is more flexible；In addition, using conductive substrates As the anode of LED, the heat dissipation effect of LED can be improved.

It, cannot the above content is specific preferred embodiment further detailed description of the utility model is combined Assert that the specific implementation of the utility model is only limited to these instructions.For the ordinary skill of the utility model technical field For personnel, without departing from the concept of the premise utility, a number of simple deductions or replacements can also be made, should all regard To belong to the protection scope of the utility model.

Claims

1. a kind of quantum dot backlight module characterized by comprising

LED light source；

Quantum dot light emitting layer is set on the LED light source；

Dielectric layer is set on the quantum dot light emitting layer；

The LED light source includes a three-color LED chip, this three-color LED chip includes red light-emitting module, green luminescence mould Block and blue light emitting module；

The LED chip includes:

Conductive substrates；

Reflective layer is set in the conductive substrates；

First electrode is set on the reflective layer；

Blue light epitaxial layer, feux rouges epitaxial layer and green light epitaxial layer, are all set on the reflective layer；

Separation layer is set on the reflective layer；

Second electrode is respectively arranged on the blue light epitaxial layer, feux rouges epitaxial layer and green light epitaxial layer；

Passivation layer is covered on the blue light epitaxial layer, feux rouges epitaxial layer, green light epitaxial layer and the separation layer.

2. backlight module as described in claim 1, which is characterized in that further include the first protective layer, be set to the LED light source Between the quantum dot light emitting layer.

3. backlight module as claimed in claim 2, which is characterized in that further include metal wire grid layer, be set to the dielectric layer On.

4. backlight module as claimed in claim 3, which is characterized in that the metal wire grid layer includes multiple strip metal lines, It is arranged on the dielectric layer.