CN108051951B - LED light source, backlight module and liquid crystal display device - Google Patents
LED light source, backlight module and liquid crystal display device Download PDFInfo
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133605—Direct backlight including specially adapted reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
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Abstract
The invention relates to an LED light source, a backlight module and a liquid crystal display device, comprising: a substrate 4021, a first blue light source 4023, a second blue light source 4024, a green light emitting material 4025, a red light emitting material 4026, and a multilayer film reflective plate 4027; the first blue light source 4023 and the second blue light source 4024 are disposed in the substrate 4021; the green light emitting material 4025 is disposed on the first blue light source 4023; the red light emitting material 4026 is disposed on the second blue light source 4024; the multilayer film reflective plate 4027 is provided on the substrate 4021. The LED light source provided by the invention has high light conversion rate, and can improve the brightness of the emitted light while realizing the characteristic of high color gamut.
Description
Technical Field
The invention relates to the field of liquid crystal display, in particular to an LED light source, a backlight module and a liquid crystal display device.
Background
A Liquid Crystal Display (LCD) is one of flat panel displays, and is widely used in products such as televisions, computers, smart phones, mobile phones, car navigation devices, electronic books, and the like. Liquid crystal display devices have the advantages of low power consumption, small size, and low radiation, and are gradually replacing Cathode Ray Tube (CRT) display devices.
At present, in order to improve the color gamut displayed by the liquid crystal display, a Light Emitting Diode (LED) with a high color gamut is generally used, and the LED generally includes a blue Light chip and red and green Light fluorescent materials or quantum dot materials, and the blue Light and ultraviolet Light emitted by the blue Light chip excite the fluorescent materials or quantum dot materials to emit Light.
In the current prior art, the LED light source is usually an independent plurality of blue light chips, uv chips or a combination thereof, and this implementation mode has high cost and large area, which is not favorable for the development of the liquid crystal display device in the low cost and ultra-thin direction, and reduces the market competitiveness and occupancy of manufacturers.
Disclosure of Invention
In order to overcome the technical defects and shortcomings in the prior art, the invention provides an LED light source, a backlight module and a liquid crystal display device. The LED light source 402 includes: a substrate 4021, a first blue light source 4023, a second blue light source 4024, a green light emitting material 4025, a red light emitting material 4026, and a multilayer film reflective plate 4027; wherein, the first and the second end of the pipe are connected with each other,
the first blue light source 4023 and the second blue light source 4024 are disposed in the substrate 4021;
the green luminescent material 4025 is disposed on the first blue light source 4023;
the red light emitting material 4026 is disposed on the second blue light source 4024;
the multilayer film reflective plate 4027 is provided on the substrate 4021.
In an embodiment of the present invention, the substrate 4021 includes a base and sidewalls disposed around the base, and the multilayer film reflective plate 4027 covers the sidewalls of the substrate 4021 to seal the substrate 4021.
In an embodiment of the present invention, the green luminescent material 4025 is a green fluorescent material or a green quantum dot material.
In an embodiment of the present invention, the red luminescent material 4026 is a red fluorescent material or a red quantum dot material.
In one embodiment of the present invention, the multilayer film reflective plate 4027 includes a plurality of first refractive index organic layers and a plurality of second refractive index organic layers, and the plurality of first refractive index organic layers and the plurality of second refractive index organic layers are alternately stacked.
In an embodiment of the present invention, the wavelength of the first blue light source 4023 is smaller than that of the second blue light source 4024.
In an embodiment of the present invention, the first blue light source 4023 and the second blue light source 4024 are lateral LED blue chips.
In one embodiment of the present invention, the lateral LED blue light chip includes a substrate 11, a first GaN blue light epitaxial layer 12, a second GaN blue light epitaxial layer 13, an isolation layer 14, an electrode 15, a passivation layer 16, and a light reflection layer 17.
Another embodiment of the present invention provides a backlight module 41, which includes a light guide plate 403, a reflective sheet 405, a diffusion film 406, and a brightness enhancement film 407, and further includes the LED light source 402 according to any of the above embodiments.
A liquid crystal display device according to another embodiment of the present invention includes a lower polarizer 42, a lower substrate 43, a lower electrode 44, a liquid crystal layer 45, an upper electrode 46, a color photoresist layer 47, an upper substrate layer 48, an upper polarizer 49, and a backlight module 41 according to any of the above embodiments.
Compared with the prior art, the invention has the following beneficial effects:
1. the LED light source provided by the invention integrates the first blue light source and the second blue light source into one transverse LED blue light chip, has small area and low cost, and is beneficial to the development of a liquid crystal display device to the low-cost and ultrathin direction;
2. the backlight module provided by the invention has high light conversion rate, and can improve the brightness of the LED light source while realizing the characteristic of high color gamut of the LED light source.
Drawings
The following detailed description of embodiments of the invention will be made with reference to the accompanying drawings.
Fig. 1 is a schematic view of an LED light source structure according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a backlight module according to an embodiment of the invention;
FIG. 3 is a schematic structural diagram of a liquid crystal display device according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a two-color LED chip according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a GaN blue light epitaxial layer according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a first active layer according to an embodiment of the invention;
fig. 7 is a schematic structural diagram of a GaN violet epitaxial layer according to an embodiment of the present invention;
fig. 8 is a schematic structural diagram of a second active layer according to an embodiment of the invention;
FIG. 9 is a schematic structural diagram of an electrode according to an embodiment of the present invention;
fig. 10a to fig. 10f are schematic diagrams illustrating a method for manufacturing a dual-color LED chip according to an embodiment of the invention;
fig. 11 is a schematic structural diagram of another two-color LED chip according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Example one
Referring to fig. 1, fig. 1 is a schematic view of an LED light source structure according to an embodiment of the present invention. The present implementation proposes an LED light source, the LED light source 402 comprising: a substrate 4021, a first blue light source 4023, a second blue light source 4024, a green light emitting material 4025, a red light emitting material 4026, and a multilayer film reflective plate 4027; wherein the content of the first and second substances,
the first blue light source 4023 and the second blue light source 4024 are disposed in the substrate 4021;
the green luminescent material 4025 is disposed on the first blue light source 4023;
the red light emitting material 4026 is disposed on the second blue light source 4024;
the multilayer film reflective plate 4027 is provided on the substrate 4021.
Further, the substrate 4021 includes a base and side walls disposed around the base, and the multilayer film reflective plate 4027 covers the side walls of the substrate 4021 to seal the substrate 4021.
Further, the green luminescent material 4025 is a green fluorescent material or a green quantum dot material.
Further, the red light emitting material 4026 is a red fluorescent material or a red quantum dot material.
Further, the multilayer film reflective plate 4027 includes a plurality of first refractive index organic layers and a plurality of second refractive index organic layers, and the plurality of first refractive index organic layers and the plurality of second refractive index organic layers are alternately stacked.
Further, the wavelength of the first blue light source 4023 is smaller than that of the second blue light source 4024.
Further, the first blue light source 4023 and the second blue light source 4024 are lateral LED blue light chips.
Further, the transverse LED blue light chip comprises a substrate 11, a first GaN blue light epitaxial layer 12, a second GaN blue light epitaxial layer 13, an isolation layer 14, an electrode 15, a passivation layer 16 and a light reflecting layer 17.
In the embodiment, the first blue light source and the second blue light source are used as excitation light sources of the LED light source, and the first blue light source is used for exciting the green luminescent material to generate green light; the second blue light source excites the red luminescent material to generate red light, and the multilayer film reflecting plate has different light reflectivity to different wavelengths; in addition, part of the first blue light source and the second blue light source can be reflected back to the substrate by the multilayer film reflecting plate to repeatedly excite the green luminescent material and the red luminescent material so as to improve the light conversion rate of the green luminescent material and the red luminescent material, so that the high color gamut characteristic of the LED light source can be realized, and meanwhile, the brightness of the luminescent light is improved.
Example two
Please refer to fig. 1 and fig. 2, fig. 2 is a schematic structural diagram of a backlight module according to an embodiment of the present invention; the present embodiment provides a detailed description of the LED light source and the backlight module based on the above embodiments.
The LED light source 402 includes a substrate 4021, a first blue light source 4023, a second blue light source 4024, a green light emitting material 4025, a red light emitting material 4026, and a multilayer film reflective plate 4027; the first blue light source 4023 and the second blue light source 4024 are lateral LED blue light chips, and the lateral LED blue light chips are formed by preparing the first blue light source 4023 and the second blue light source 4024 in the same chip and are arranged on the inner surface of the substrate 4021; the wavelength of the first blue light source 4023 is in a first wavelength range, and the wavelength of the second blue light source 4024 is in a second wavelength range; the green luminescent material 4025 is disposed above the first blue light source 4023, and the green luminescent material 4025 emits green light under the excitation of the first blue light source 4023; the red luminescent material 4026 is disposed above the second blue light source 4024, and the red luminescent material 4026 emits red light under the excitation of the second blue light source 4024; the multilayer film reflector 4027 is arranged in the light emergent direction of the green light and the red light, and the reflectivity of the multilayer film reflector 4027 to light in a third wavelength range is greater than the reflectivity to light in a fourth wavelength range; and the wavelength range of the green light and the wavelength range of the red light are both in the fourth wavelength range.
The substrate 4021 includes a base and a sidewall disposed around the base to reflect a first blue light emitted from the first blue light source 4023 and a second blue light emitted from the second blue light source 4024, which exit from the base and the sidewall, a green light emitted from the green light emitting material 4025 under the excitation of the first blue light source 4023, and a red light emitted from the red light emitting material 4026 under the excitation of the second blue light source 4024; and a multilayer film reflective plate 4027 covers a sidewall of the substrate 4021 to close the substrate 4021.
In this embodiment, the multilayer film reflective plate 4027 transmits the green light, the red light, the first blue light and the second blue light having the wavelength range within the fourth wavelength range to synthesize the high color gamut light, so that the light within the third wavelength range in the first blue light source 4023 and/or the light within the third wavelength range in the second blue light source 4024 can be reflected back to the substrate 4021 by the multilayer reflective plate to repeatedly excite the green luminescent material 4025 and the red luminescent material 4026, thereby improving the light conversion rates of the green luminescent material 4025 and the red luminescent material 4026, and thus, the high color gamut characteristics of the LED light source can be realized and the luminance thereof can be improved.
Optionally, the first wavelength range emitted by the first blue light source 4023 of this embodiment is 340 to 450nm; the second wavelength range emitted by the second blue light source 4024 is 455-485 nm. Any color of light can be synthesized by three primary colors of red, green and blue, and the blue light wavelength is the shortest among the three primary colors of RGB, which is generally used to excite the luminescent material to emit light.
Optionally, the third wavelength range of this embodiment is 340 to 435nm or 710 to 1500nm, and the fourth wavelength range is 455 to 700nm; the reflectance of the multilayer film reflective plate 4027 to light in the third wavelength range is greater than or equal to 80%, the reflectance of the multilayer film reflective plate 4027 to light in the fourth wavelength range is less than 20%, and the wavelength ranges of green light and red light are 455-700 nm.
As can be seen from the above analysis, the first wavelength range of the present embodiment substantially falls within the third wavelength range, and the second wavelength range falls within the fourth wavelength range, so that the reflectivity of the multilayer film reflective plate 4027 to light in the first wavelength range is greater than that to light in the second wavelength range, and 80% or more of the first blue light can be reflected back into the substrate 4021, so as to repeatedly excite the green luminescent material 4025 and the red luminescent material 4026 to emit green light and red light, respectively, thereby increasing the light conversion rates of the green luminescent material 4025 and the red luminescent material 4026; the second blue light, the green light, and the red light transmitted from the multilayer film reflective plate 4027 are synthesized into white light with a high color gamut.
The green luminescent material 4025 in this embodiment may be, but is not limited to, any one of a fluorescent material, a phosphorescent material, and a quantum dot material; the red light-emitting material 4026 may be any one of, but is not limited to, a fluorescent material, a phosphorescent material, and a quantum dot material.
Furthermore, the film reflection plate 4027 provided in this embodiment includes a plurality of first refractive index organic layers and a plurality of second refractive index organic layers, and the plurality of first refractive index organic layers and the plurality of second refractive index organic layers are alternately stacked, wherein the first refractive index organic layers may be selected as low refractive index organic layers, which may be but not limited to SiO 2 The second index organic layer may be selected to be a high index organic layer, which may be, but is not limited to, ta 2 O 5 And TiO 2 2 。
Further, on the basis of the above embodiments, the present embodiment provides a backlight module, the backlight module 41 includes an LED light source 402, a light guide plate 403, a reflective sheet 405, a diffusion film 406, a brightness enhancement film 407, and the like, wherein the LED light source 402 is disposed at a side of the light guide plate 403 to form a side-in type backlight module. The light guide plate 403 is used to change the point light source of the LED light source 402 into a surface light source; the reflective sheet 405 is used to reflect part of the light emitted from the non-light-emitting surface of the light guide plate 403 back to the light guide plate 403, so as to improve the light utilization rate; the diffusion film 406 is used to improve the uniformity of the backlight; the brightness enhancement film 407 has a prismatic condensing effect for enhancing light in the longitudinal or transverse direction to enhance the brightness of the backlight.
EXAMPLE III
Referring to fig. 3, fig. 3 is a schematic structural diagram of a liquid crystal display device according to an embodiment of the invention. The present embodiment describes the liquid crystal display device in detail on the basis of the above-described embodiments. The display device includes a backlight module 41, a lower polarizer 42, a lower substrate 43, a lower electrode 44, a liquid crystal molecular layer 45, an upper electrode 46, a color photoresist layer 47, an upper substrate layer 48, and an upper polarizer 49, wherein the color photoresist layer 47 includes a red photoresist, a green photoresist, and a blue photoresist, and the structure of the backlight module 41 is described in the second embodiment and is not repeated herein.
The backlight of the backlight module has the characteristic of high color gamut and has larger brightness, so that the display color gamut and the brightness of the display device can be improved.
Example four
Referring to fig. 4, fig. 4 is a schematic structural diagram of a lateral LED blue light chip according to an embodiment of the present invention, and the present embodiment describes in detail a lateral LED blue light chip applied to an LED light source on the basis of the foregoing embodiment. The lateral LED blue chip 10 includes: the LED comprises a substrate 11, a first GaN blue light epitaxial layer 12, a second GaN blue light epitaxial layer 13, an isolation layer 14, an electrode 15, a passivation layer 16 and a reflecting layer 17; wherein, the first and the second end of the pipe are connected with each other,
the first GaN blue light epitaxial layer 12, the second GaN blue light epitaxial layer 13 and the isolation layer 14 are all arranged on the upper surface of the substrate 11, and the isolation layer 14 is located between the first GaN blue light epitaxial layer 12 and the second GaN blue light epitaxial layer 13;
the electrodes 15 are respectively arranged on the first GaN blue epitaxial layer 12 and the second GaN blue epitaxial layer 13;
the passivation layer 16 is disposed on the upper surfaces of the first GaN blue epitaxial layer 12, the second GaN blue epitaxial layer 13 and the isolation layer 14;
the light reflecting layer 17 is disposed on the lower surface of the substrate 11.
Further, the substrate 11 is a sapphire substrate. The crystal plane of the sapphire substrate is (0001), and the thickness is less than 150 mu m.
Further, on the basis of the above embodiments, please refer to fig. 5, where fig. 5 is a schematic structural diagram of a first GaN blue light epitaxial layer according to an embodiment of the present invention, and the first GaN blue light epitaxial layer forms a first blue light source structure; specifically, the first GaN blue epitaxial layer 12 includes: a first GaN buffer layer 121, a first GaN stabilization layer 122, a first n-type GaN layer 123, a first active layer 124, a first p-type AlGaN barrier layer 125, and a first p-type GaN contact layer 126;
the first GaN buffer layer 121, the first GaN stabilization layer 122, the first n-type GaN layer 123, the first active layer 124, the first p-type AlGaN barrier layer 125, and the first p-type GaN contact layer 126 are sequentially stacked on a first designated region on the upper surface of the substrate 11.
Wherein, the thickness of the first GaN buffer layer 121 is 3000 to 5000nm, preferably 4000nm;
the thickness of the first GaN stable layer 122 is 500 to 1500nm, preferably 1000nm;
the first n-type GaN layer 123 has a thickness of 200 to 1000nm, preferably 400nm, and a doping concentration of 1X 10 18 ～5×10 19 cm -3 Preferably 1X 10 19 cm -3 ；
Referring to fig. 6, fig. 6 is a schematic structural diagram of a first active layer according to an embodiment of the invention; the first active layer 124 is an InGaN quantum well 1241/GaN barrier 1242 multi-structure, the period of the multi-structure is 8-30, preferably 20; wherein, the thickness of the InGaN quantum well 1241 is 1.5-3.5 nm, preferably 2.8nm; the thickness of the GaN barrier 1242 is 5 to 10nm, preferably 5nm; the In content In the InGaN quantum well 1241 and the GaN barrier 1242 is determined according to the wavelength of light, and the higher the content is, the longer the wavelength of light is, generally 10 to 16%;
the thickness of the first p-type AlGaN barrier layer 125 is 10 to 40nm, preferably 20nm;
the thickness of the first p-type GaN contact layer 126 is 100 to 300nm, preferably 200nm.
Further, referring to fig. 7 on the basis of the above embodiments, fig. 7 is a schematic structural diagram of a second GaN blue light epitaxial layer according to an embodiment of the present invention, where the second GaN blue light epitaxial layer forms a second blue light source structure; specifically, the second GaN blue epitaxial layer 13 includes: a second GaN buffer layer 131, a second GaN stabilization layer 132, a second n-type GaN layer 133, a second active layer 134, a second p-type AlGaN barrier layer 135, and a second p-type GaN contact layer 136;
the second GaN buffer layer 131, the second GaN stabilization layer 132, the second n-type GaN layer 133, the second active layer 134, the second p-type AlGaN barrier layer 135, and the second p-type GaN contact layer 136 are sequentially stacked on a second predetermined region on the upper surface of the substrate 11.
Wherein, the thickness of the second GaN buffer layer 131 is 3000-5000 nm, preferably 4000nm;
the thickness of the second GaN stable layer 132 is 500 to 1500nm, preferably 1000nm;
the second n-type GaN layer 133 has a thickness of 200 to 1000nm, preferably 400nm, and a doping concentration of 1X 10 18 ～5×10 19 cm -3 Preferably 1X 10 19 cm -3 ；
Referring to fig. 8, fig. 8 is a schematic structural diagram of a second active layer according to an embodiment of the invention; the second active layer 134 is an InGaN quantum well 1341/GaN barrier 1342 multi-structure, the period of which is 8 to 30, preferably 20; wherein, the thickness of the InGaN quantum well 1341 is 1.5-3.5 nm, preferably 2.8nm; 5 to 10nm, preferably 5nm, of the GaN barrier 1342; the In content In the InGaN quantum well 1341 and the GaN barrier 1342 is determined by the wavelength of light, and the higher the content, the longer the wavelength of light is, usually 17 to 19%;
the thickness of the second p-type AlGaN barrier layer 135 is 10-40 nm, preferably 20nm, wherein the composition proportion of Al is more than 70%;
the thickness of the second p-type GaN contact layer 136 is 100 to 300nm, preferably 200nm.
Further, on the basis of the above embodiment, please refer to fig. 9, fig. 9 is a schematic structural diagram of an electrode according to an embodiment of the present invention; the electrode 15 comprises a metal silicide 151 and a metal 152; wherein the content of the first and second substances,
the metal silicide 151 is arranged on the upper surfaces of the first GaN blue epitaxial layer 12 and the second GaN blue epitaxial layer 13; specifically, the metal silicide 151 is disposed on the upper surfaces of the first p-type GaN contact layer 126, the second p-type GaN contact layer 136, the first n-type GaN layer 123, and the second n-type GaN layer 133;
the metal 152 is disposed on the upper surface of the metal silicide 151;
the metal silicide 151 and the metal 152 jointly form an electrode structure, wherein the metal silicide 151 and the semiconductor material have small contact barrier to form ohmic contact;
the upper surfaces of the first p-type GaN contact layer 126 and the second p-type GaN contact layer 136 are the anodes of the first blue light source and the second blue light source, respectively; the metal silicide 151 and the metal 152 on the upper surfaces of the first n-type GaN layer 123 and the second n-type GaN layer 133 form the cathodes of the first blue light source and the second blue light source, respectively.
Further, on the basis of the above embodiment, the passivation layer 16 is made of silicon dioxide.
Further, on the basis of the above embodiment, the material of the light reflecting layer 17 is Al, ti or Ni.
In practical applications, the number of the first blue light sources and the number of the second blue light sources may be determined according to actual needs.
According to the transverse LED blue light chip provided by the embodiment, the first blue light source and the second blue light source are formed on the single chip, so that the using amount of fluorescent powder during later-period packaging can be reduced; in addition, the first blue light source and the second blue light source are integrated on the same chip, the integration level is improved, the cost of the LED can be reduced, and the color temperature can be adjusted more flexibly.
EXAMPLE five
Referring to fig. 10a to 10f, fig. 10a to 10f are schematic diagrams illustrating a method for manufacturing a lateral LED blue chip according to an embodiment of the present invention. Specifically, the preparation method comprises the following steps:
step 1, a sapphire substrate 700 with a thickness of 4000nm is selected, as shown in fig. 10 a.
Step 2, growing a first GaN buffer layer 701 with the thickness of 3000-5000 nm on the upper surface of the sapphire substrate 700 at the temperature of 400-600 ℃; growing the first GaN buffer layer 701 on the upper surface thereof to a thickness of 500-1 ℃ at a temperature of 900-1050 DEG CA 500nm first GaN stabilization layer 702; growing the GaN layer on the first GaN stable layer 702 at 900-1050 deg.C to a thickness of 200-1000 nm and a doping concentration of 1 × 10 18 ～5×10 19 cm -3 The first n-type GaN layer 703; an InGaN quantum well/GaN barrier multiple structure is grown on the upper surface of the first n-type GaN layer 703 to serve as a first active layer 704; wherein the growth temperature of the InGaN quantum well is 650-750 ℃, the thickness is 1.5-3.5 nm, and the in content is 10-16%; the growth temperature of the GaN barrier is 750-850 ℃, and the thickness is 5-10 nm; the period of the InGaN quantum well/GaN barrier multiple structure is 20; growing a first p-type AlGaN barrier layer 705 with the thickness of 10-40 nm on the upper surface of the first active layer 104 at the temperature of 850-950 ℃; and growing a first p-type GaN contact layer 706 with the thickness of 100-300 nm on the upper surface of the first p-type AlGaN barrier layer 705 at the temperature of 850-950 ℃, as shown in FIG. 10 b.
Step 3, depositing a first SiO with the thickness of 300-800 nm on the upper surface of the first p-type GaN contact layer 706 2 A layer; selectively etching the first SiO by wet etching process 2 Layer of the first SiO 2 Forming a first region to be etched on the layer; etching the first p-type GaN contact layer 706, the first p-type AlGaN barrier layer 705, the first active layer 704, the first n-type GaN layer 703, the first GaN stabilizing layer 702 and the first GaN buffer layer 101 in the first region to be etched by using a dry etching process to form a first groove; removing the first SiO 2 Layer and depositing a second SiO in the first recess 2 A layer; selectively etching the second SiO 2 A layer to form SiO around the first groove 2 An isolation layer 900 of SiO 2 The inner region of the isolation layer serves as the second blue-light lamp core groove, as shown in fig. 10 c.
Step 4, growing a second GaN buffer layer 801 with the thickness of 3000-5000 nm at the bottom of the second blue light lampwick groove at the temperature of 400-600 ℃; growing a second GaN stabilizing layer 802 with the thickness of 500-1500 nm on the upper surface of the second GaN buffer layer 801 at the temperature of 900-1050 ℃; at the temperature of 900-1050 ℃, the upper surface of the second GaN stable layer 802 is provided with a GaN layerThe growth thickness is 200-1000 nm, the doping concentration is 1 multiplied by 10 18 ～5×10 19 cm -3 The second n-type GaN layer 803; an InGaN quantum well/GaN barrier multiple structure is grown on the upper surface of the second n-type GaN layer 803 to serve as a second active layer 804; wherein the growth temperature of the InGaN quantum well is 650-750 ℃, the thickness is 1.5-3.5 nm, and the in content is 17-19%; the growth temperature of the GaN barrier is 750-850 ℃, and the thickness is 5-10 nm; the cycle of the InGaN quantum well/GaN barrier multiple structure is 20; growing a second p-type AlGaN barrier layer 805 with the thickness of 10-40 nm on the upper surface of the second active layer 804 at the temperature of 850-950 ℃; and growing a second p-type GaN contact layer 806 with the thickness of 100-300 nm on the second p-type AlGaN barrier layer 805 at the temperature of 850-950 ℃, as shown in FIG. 10 d.
Step 5, depositing a third SiO on the upper surfaces of the first p-type GaN contact layer 706 and the second p-type GaN contact layer 806 by using a PECVD process 2 A layer; selectively etching the third SiO by wet etching process 2 A second to-be-etched region and a third to-be-etched region are formed on the upper surfaces of the first p-type GaN contact layer 706 and the second p-type GaN contact layer 806 respectively; sequentially etching the first p-type GaN contact layer 706, the first p-type AlGaN barrier layer 705 and the second active layer 704 in the second region to be etched, and sequentially etching the second p-type GaN contact layer 806, the second p-type AlGaN barrier layer 805 and the Al active layer in the third region to be etched 1-x Ga x N/Al 1-y Ga y An N active layer 804 for forming a second groove on the upper surface of the first N-type GaN layer 703 and a third groove on the upper surface of the second N-type GaN layer 803, respectively; removing the third SiO 2 A fourth SiO layer with the thickness of 300-800 nm is deposited on the upper surface of the first p-type GaN contact layer 706, the upper surface of the second p-type GaN contact layer 806, the bottom of the second groove and the bottom of the third groove 2 A layer; selectively etching the fourth SiO 2 A first upper layer formed on the upper surface of the first p-type GaN contact layer 706, the upper surface of the second p-type GaN contact layer 806, the upper surface of the first n-type GaN layer 703 and the upper surface of the second n-type GaN layer 803, respectivelyAn electrode lead hole, a second upper electrode lead hole, a first lower electrode lead hole and a second lower electrode lead hole; depositing Cr/Pt/Au material at the bottoms of the first upper electrode lead hole, the second upper electrode lead hole, the first lower electrode lead hole and the second lower electrode lead hole; wherein the thickness of Cr is 20-40nm, the thickness of Pt is 20-40nm, and the thickness of Au is 800-1500 nm; annealing the whole material including the Cr/Pt/Au material, the first p-type GaN contact layer 706, the second p-type GaN contact layer 806, the first n-type GaN layer 703 and the second n-type GaN layer 803 at a temperature of 300-500 ℃ to form a metal silicide at the contact interfaces of the first p-type GaN contact layer 706, the second p-type GaN contact layer 806, the first n-type GaN layer 703 and the second n-type GaN layer 803 with the Cr/Pt/Au material; removing the Cr/Pt/Au material; depositing a metal on the surface of the metal compound; the metal is etched to form the anode 31 and the cathode 32 of the first blue light source chip, and the anode 31 'and the cathode 32' of the second blue light source chip, as shown in fig. 10 e.
6, removing a part of material at the bottom of the sapphire substrate, so that the thickness of the rest part of the sapphire substrate material is below 150 μm; a metal reflective layer 920 is plated on the bottom of the sapphire substrate as shown in fig. 10 f.
According to the preparation method of the transverse LED blue light chip based on the GaN material, the first blue light source and the second blue light source are manufactured on the single chip, so that the using amount of fluorescent powder can be reduced in subsequent packaging; in addition, the process is simple, and the manufactured chip is high in integration level.
EXAMPLE six
Referring to fig. 11, fig. 11 is a schematic structural diagram of another lateral LED blue light chip according to an embodiment of the present invention. The difference between the first blue light source chip and the second blue light source chip provided in this embodiment and the first blue light source chip and the second blue light source chip provided in the second embodiment is that the first GaN buffer layer 101 is not completely etched away when the second blue light lamp core groove is prepared, and other processes are the same. The structure has the advantages that the cathodes of the first blue light source and the second blue light source are connected together, and wiring is simpler during subsequent packaging.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, numerous simple deductions or substitutions may be made without departing from the spirit of the invention, which shall be deemed to belong to the scope of the invention.
Claims (8)
1. An LED light source (402), comprising: a substrate (4021), a first blue light source (4023), a second blue light source (4024), a green light emitting material (4025), a red light emitting material (4026), and a multilayer film reflective plate (4027); wherein the content of the first and second substances,
the first blue light source (4023) and the second blue light source (4024) are arranged in the substrate (4021);
the green luminescent material (4025) is arranged on the first blue light source (4023);
the red luminescent material (4026) is arranged on the second blue light source (4024);
the multilayer film reflective plate (4027) is disposed on the substrate (4021);
wherein the first blue light source (4023) and the second blue light source (4024) are both lateral LED blue light chips;
the horizontal LED blue light chip comprises: the GaN-based LED comprises a substrate (11), a first GaN blue light epitaxial layer (12), a second GaN blue light epitaxial layer (13), an isolation layer (14), an electrode (15), a passivation layer (16) and a reflecting layer (17); the first GaN blue light epitaxial layer (12), the second GaN blue light epitaxial layer (13) and the isolation layer (14) are arranged on the upper surface of the substrate 11, and the isolation layer (14) is located between the first GaN blue light epitaxial layer (12) and the second GaN blue light epitaxial layer (13); the electrodes (15) are respectively arranged on the first GaN blue light epitaxial layer (12) and the second GaN blue light epitaxial layer (13); the passivation layer (16) is arranged on the upper surfaces of the first GaN blue light epitaxial layer (12), the second GaN blue light epitaxial layer (13) and the isolation layer (14); the light reflecting layer (17) is arranged on the lower surface of the substrate (11);
the first GaN blue epitaxial layer (12) includes: a first GaN buffer layer (121), a first GaN stabilizing layer (122), a first n-type GaN layer (123), a first active layer (124), a first p-type AlGaN barrier layer (125), and a first p-type GaN contact layer (126); wherein the first GaN buffer layer (121), the first GaN stabilizing layer (122), the first n-type GaN layer (123), the first active layer (124), the first p-type AlGaN barrier layer (125), and the first p-type GaN contact layer (126) are sequentially laminated in a first designated region on the upper surface of the substrate (11);
the second GaN blue epitaxial layer (13) includes: a second GaN buffer layer (131), a second GaN stabilizing layer (132), a second n-type GaN layer (133), a second active layer (134), a second p-type AlGaN barrier layer (135), and a second p-type GaN contact layer (136); wherein the second GaN buffer layer (131), the second GaN stabilizing layer (132), the second n-type GaN layer (133), the second active layer (134), the second p-type AlGaN barrier layer (135), and the second p-type GaN contact layer (136) are sequentially stacked on a second designated region of the upper surface of the substrate (11);
the preparation method of the transverse LED blue light chip comprises the following steps:
growing a first GaN buffer layer on the upper surface of the sapphire substrate;
growing a first GaN stable layer on the upper surface of the first GaN buffer layer;
growing a first n-type GaN layer on the upper surface of the first GaN stable layer;
growing an InGaN quantum well/GaN barrier multiple structure on the upper surface of the first n-type GaN layer to serve as a first active layer;
growing a first p-type AlGaN barrier layer on the upper surface of the first active layer;
growing a first p-type GaN contact layer on the upper surface of the first p-type AlGaN barrier layer;
depositing first SiO on the upper surface of the first p-type GaN contact layer 2 A layer;
selectively etching the first SiO by wet etching process 2 Layer of the first SiO 2 Forming a first region to be etched on the layer;
etching the first p-type GaN contact layer, the first p-type AlGaN barrier layer, the first active layer, the first n-type GaN layer, the first GaN stabilizing layer and the first GaN buffer layer in the first region to be etched by using a dry etching process to form a first groove;
removing the first SiO 2 Layer and depositing a second SiO in the first recess 2 A layer;
selectively etching the second SiO 2 A layer to form SiO around the first groove 2 An isolation layer of said SiO 2 The inner area of the isolation layer is used as a second blue light lamp core groove;
growing a second GaN buffer layer at the bottom of the second blue light lampwick groove;
growing a second GaN stable layer on the upper surface of the second GaN buffer layer;
growing a second n-type GaN layer on the upper surface of the second GaN stable layer;
growing an InGaN quantum well/GaN barrier multiple structure on the upper surface of the second n-type GaN layer to serve as a second active layer;
growing a second p-type AlGaN barrier layer on the upper surface of the second active layer;
growing a second p-type GaN contact layer on the upper surface of the second p-type AlGaN barrier layer;
and in the process of forming the first groove by using a dry etching process, the first GaN buffer layer is not completely etched, so that the cathodes of the first blue light source and the second blue light source are connected together.
2. The LED light source (402) of claim 1, wherein the substrate (4021) comprises a base and a sidewall disposed around the base, and the multilayer film reflecting plate (4027) covers the sidewall of the substrate (4021) to seal the substrate (4021).
3. The LED light source (402) of claim 1, wherein the green luminescent material (4025) is a green fluorescent material or a green quantum dot material.
4. The LED light source (402) of claim 1, wherein the red luminescent material (4026) is a red fluorescent material or a red quantum dot material.
5. The LED light source (402) of claim 1, wherein the multilayer film reflector (4027) comprises a plurality of organic layers of a first refractive index and a plurality of organic layers of a second refractive index, and wherein the plurality of organic layers of the first refractive index and the plurality of organic layers of the second refractive index are alternately stacked.
6. The LED light source (402) of claim 1, wherein the first blue light source (4023) has a smaller wavelength than the second blue light source (4024).
7. A backlight module (41) comprising a light guide plate (403), a reflective sheet (405), a diffuser film (406) and a brightness enhancement film (407), and further comprising the LED light source (402) according to any one of claims 1 to 6.
8. A liquid crystal display device comprising a lower polarizer (42), a lower substrate (43), a lower electrode (44), a liquid crystal molecular layer (45), an upper electrode (46), a color photoresist layer (47), an upper substrate layer (48) and an upper polarizer (49), characterized by further comprising the backlight module (41) as claimed in claim 7.
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| US11112652B2 (en) | 2018-12-11 | 2021-09-07 | Lg Display Co., Ltd. | Backlight unit and display device including the same technical field |
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| JP4574417B2 (en) * | 2005-03-31 | 2010-11-04 | シャープ株式会社 | Light source module, backlight unit, liquid crystal display device |
| US7244630B2 (en) * | 2005-04-05 | 2007-07-17 | Philips Lumileds Lighting Company, Llc | A1InGaP LED having reduced temperature dependence |
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