CN111834421B - Triode-regulated hybrid structure full-color display device and manufacturing method thereof - Google Patents
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Abstract
The invention relates to a triode-regulated mixed structure full-color display device and a manufacturing method thereof, wherein a low-power variable input signal is respectively applied between a first contact electrode, a second contact electrode SCE1 and a third contact electrode SCE2, a forward bias voltage is respectively applied between the first contact electrode, a fourth contact electrode TCE1 and a fifth contact electrode TCE2, a blue light emitting chip in a B unit is driven to emit blue light, a blue light emitting chip in an R unit is driven to emit blue light so as to excite a red conversion layer to emit red light, and a voltage is applied between a cathode and a transparent anode in a G unit so as to excite green light, thereby realizing full-color display; the first triode and the second triode amplify the power of the input signal, realize that the light-emitting chip is driven to emit light by using the low-power input signal, effectively reduce the design complexity of a driving circuit of the light-emitting device and improve the integration level of the display device.
Description
Technical Field
The invention relates to the field of design of display semiconductor light-emitting devices, in particular to a triode-regulated hybrid structure full-color display device and a manufacturing method thereof.
Background
Light Emitting Diodes (LEDs) are increasingly used in display applications due to their long life, small size, low power consumption, high brightness, fast response speed, and the like. However, with the rapid development of information technology, conventional display technologies have failed to meet the existing demands, and new low-power consumption, high-brightness, wide-color-gamut, ultra-high-resolution micro-display technologies have become more and more important. The micro-scale light emitting diode (mu LED) is one of the most potential next generation display devices, which is formed by miniaturizing the conventional LEDs to form a micro-scale pitch LED array to achieve ultra-high density pixel resolution and can be widely applied to the fields of soft, transparent displays, AR, VR and the like. Compared with OLED and LCD display, the color of the display of the mu LED is easier to accurately debug, the luminous life is long, the brightness is high, the display device is the only display device which can be provided with high luminous efficiency and low power consumption and integrates driving, luminous and signal transmission, and the ultra-large scale integrated luminous unit is realized.
LEDs are generally monochromatic light sources, and the problem of full color must be solved for application to displays. The current method for realizing the full-color display of the mu LED mainly comprises an RGB trichromatic chip method, a uv/blue mu LED+color conversion layer color conversion method, a nano-column RGB pixel light source, an optical prism synthesis method and a chromaver wavelength conversion technology. For the RGB trichromatic chip method, the chips on the RGB trichromatic process with different wavelengths are difficult to grow on the same substrate, and the trichromatic chips are required to be driven respectively, so that a driving circuit is complex and the cost is high. Other preparation methods also have the problems of full-color display deviation, low light conversion efficiency, uneven coating of a luminescent medium, high preparation cost, harsh processing conditions, unfavorable large-area production and the like, so that the realization and the application of high-quality commercial LED products are unfavorable. Chinese patent CN201810863787.2 discloses a full-color micro-LED device based on hybrid inorganic/organic semiconductor structure and a method for preparing the same, wherein an RGB three-primary-color module is prepared on the same substrate, the blue light part is a GaN epitaxial wafer, the red light and the green light are vapor-deposited organic materials, the technology combines the organic semiconductor materials and the inorganic semiconductor materials, and the full-color micro-LED device has the advantages of high efficiency, wide color gamut, low power consumption and the like, but the peripheral amplifying driving circuit is complex, the cost is high, and the construction of a high-integration system is not facilitated.
Currently, LEDs on the market are basically driven by two electrodes, whether they are in a vertical or flip-chip configuration, i.e. there are only two contact electrodes acting on both ends of the LED. The driving mode is more general, but the low-power signal output by the control chip cannot directly drive the LED, and power amplification is needed in the middle. These power amplifying circuits will significantly increase the design complexity of the driving circuit. Particularly for the mu LED, the complex driving circuit is disadvantageous for the construction of a high integration system.
In order to solve the problems, the invention provides a triode-regulated hybrid structure full-color display device and a manufacturing method thereof. According to the invention, a low-power variable input signal is respectively applied between a first contact electrode, a second contact electrode SCE1 and a third contact electrode SCE2, a forward bias voltage is respectively applied between the first contact electrode, a fourth contact electrode TCE1 and a fifth contact electrode TCE2, a blue light emitting chip in a B unit is driven to emit blue light, a blue light emitting chip in an R unit is driven to emit blue light so as to excite a red conversion layer to emit red light, and a voltage is applied between a cathode and a transparent anode in a G unit so as to excite green light, thereby realizing full-color display; meanwhile, the first triode and the second triode amplify the power of the input signal, so that the light-emitting chip is driven to emit light by using a low-power input signal, the design complexity of a driving circuit of the light-emitting device can be effectively reduced, and the integration level of the display device is improved.
Disclosure of Invention
Therefore, the invention aims to provide a triode-regulated hybrid structure full-color display device and a manufacturing method thereof, wherein a first triode and a second triode in the device can play a role in amplifying the power of an input signal, so that a blue light emitting chip is driven to emit light by a low-power input signal; meanwhile, the first triode and the second triode can effectively reduce the design complexity of a driving circuit of the light emitting device and improve the integration level of the display device.
The invention is realized by adopting the following scheme: the LED display device comprises a substrate, and an R unit, a B unit and a G unit, wherein the R unit is arranged on the substrate and is used for displaying red light, the B unit is used for displaying blue light and the G unit is used for displaying green light, and the R unit, the B unit and the G unit are arranged on the substrate and are formed in sequence along the transverse direction; the R unit comprises a buffer layer arranged on the substrate, a first triode arranged on the buffer layer, a first blue light emitting chip and a color conversion layer which are sequentially arranged on the first triode from bottom to top; the B unit comprises a buffer layer arranged on a substrate, a second triode arranged on the buffer layer, a second blue light chip arranged on the second triode from bottom to top, and a second distributed Bragg reflector layer DBR2 for partially reflecting blue light; the G unit comprises a cathode, an electron injection layer, an electron transport layer, a green light emitting layer, a hole transport layer, a hole injection layer and a transparent anode from bottom to top; the first triode and the second triode amplify the power of the input signal so as to drive the first blue light emitting chip and the second blue light emitting chip to emit light by using the low-power input signal.
Further, the color conversion layer includes a red light conversion layer for displaying red light and a first distributed bragg reflection layer DBR1, which are sequentially disposed from bottom to top.
Further, the first triode comprises a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a first contact electrode led out of the first semiconductor layer and a second contact electrode SCE1 led out of the second semiconductor layer R unit from bottom to top; the first blue light emitting chip comprises a third semiconductor layer, a first blue light emitting layer, a fourth semiconductor layer and a fourth contact electrode TCE1 which is led out from the inside of a fourth semiconductor layer R unit from bottom to top; the second triode comprises a first semiconductor layer, a fifth semiconductor layer, a sixth semiconductor layer, a first contact electrode led out of the first semiconductor layer and a third contact electrode SCE2 led out of the second semiconductor layer B unit from bottom to top; the second blue light emitting chip comprises a sixth semiconductor layer, a second blue light emitting layer, a seventh semiconductor layer and a fifth contact electrode TCE2 led out from the seventh semiconductor layer B unit from bottom to top; the R unit and the B unit share the same first contact electrode; applying a variable input signal between the first contact electrode and the second contact electrode SCE1 and between the first contact electrode and the third contact electrode SCE2, applying a forward bias voltage between the first contact electrode and the fourth contact electrode TCE1 and between the first contact electrode and the fifth contact electrode TCE2, respectively, driving the second blue light emitting chip in the B unit to emit blue light, driving the first blue light emitting chip in the R unit to emit blue light and further driving the red light conversion layer to emit red light, and applying a voltage between the cathode and the transparent anode in the G unit to excite green light for realizing full-color display;
The second semiconductor layer and the fifth semiconductor layer are made of the same material, the third semiconductor layer and the sixth semiconductor layer are made of the same material, and the fourth semiconductor layer and the seventh semiconductor layer are made of the same material.
Further, the first blue light emitting layer excites the red light conversion layer to obtain red light in the R unit, and the red light conversion layer adopts a red quantum dot material or fluorescent powder or a combination of the red quantum dot material or fluorescent powder and other polymers.
Further, the first semiconductor layer is an N-type semiconductor layer, the second semiconductor layer is a P-type semiconductor layer, the third semiconductor layer is an N-type semiconductor layer, the fourth semiconductor layer is a P-type semiconductor layer, the fifth semiconductor layer is a P-type semiconductor layer, the sixth semiconductor layer is an N-type semiconductor layer, the seventh semiconductor layer is a P-type semiconductor layer or the first semiconductor layer is a P-type semiconductor layer, the second semiconductor layer is an N-type semiconductor layer, the third semiconductor layer is a P-type semiconductor layer, the fourth semiconductor layer is an N-type semiconductor layer, and the fifth semiconductor layer is an N-type semiconductor layer, the sixth semiconductor layer is a P-type semiconductor layer, and the seventh semiconductor layer is an N-type semiconductor layer.
Further, the first semiconductor layer is a semiconductor layer of heavy doping concentration, which is 1 to 5 orders of magnitude higher than the doping concentration of the second semiconductor layer; the thickness of the second semiconductor layer is 0.5nm to 2 μm, which is the same as that of the fifth semiconductor layer; host materials of the second semiconductor layer include, but are not limited to GaAs, gaP, gaN, znSe, siC, si, znSe, graphene, black phosphorus, moS 2 CNT, cuPc, alq3 organic semiconductor material.
Further, the thickness of the first semiconductor layer is 0.5 μm to 5 μm, the thickness of the third semiconductor layer and the thickness of the sixth semiconductor layer are each 0.5 μm to 5 μm, and the thickness of the fourth semiconductor layer and the thickness of the seventh semiconductor layer are each 10nm to 2 μm; host materials of the first, third and fourth semiconductor layers include, but are not limited to, gaAs, gaP, gaN, znSe, siC, si, znSe inorganic semiconductor materials and CuPc and Alq3 organic semiconductor materials.
Further, the first contact electrode forms an ohmic contact with the first semiconductor layer; the second contact electrode SCE1 and the second semiconductor layer form an ohmic contact; the third contact SCE2 and the fifth semiconductor layer form an ohmic contact; the fourth contact electrode TCE1 forms an ohmic contact with the fourth semiconductor layer; the seventh semiconductor layer of the fifth electrode TCE2 forms an ohmic contact.
Further, when the first semiconductor layer is an N-type semiconductor layer, the second semiconductor layer is a P-type semiconductor layer, the third semiconductor layer is an N-type semiconductor layer, the fourth semiconductor layer is a P-type semiconductor layer, and the fifth semiconductor layer is a P-type semiconductor layer, the sixth semiconductor layer is an N-type semiconductor layer, the seventh semiconductor layer is a P-type semiconductor layer, the voltage signal applied between the first contact electrode and the second electrode SCE1, the third electrode SCE2 is positive, the voltage signal applied between the first contact electrode and the fourth electrode TCE1, the fifth electrode TCE2 is positive;
when the first semiconductor layer is a P-type semiconductor layer, the second semiconductor layer is an N-type semiconductor layer, the third semiconductor layer is a P-type semiconductor layer, the fourth semiconductor layer is an N-type semiconductor layer, and the fifth semiconductor layer is an N-type semiconductor layer, the sixth semiconductor layer is a P-type semiconductor layer, and the seventh semiconductor layer is an N-type semiconductor layer, the voltage signal applied between the first contact electrode and the second and third electrodes SCE1, SCE2 is negative, and the voltage model applied between the first contact electrode and the fourth and fifth electrodes TCE1, TCE2 is negative.
Further, the magnitude of the voltage applied between the first contact electrode and the second and third electrodes SCE1, SCE2 is smaller than the magnitude of the voltage applied between the first contact electrode and the fourth and fifth electrodes TCE1, TCE 2.
Further, the first blue light emitting layer and the second blue light emitting layer are both composed of a multi-quantum well active layer, a hole blocking layer or an electron blocking layer for improving the carrier recombination efficiency; or each of the organic thin films having a light emitting function and a functional layer for improving the carrier recombination efficiency; or the nano material film with the light-emitting function and the functional layer for improving the carrier recombination efficiency.
Further, the G unit adopts an organic light emitting diode or a quantum dot light emitting diode QLED; wherein, when an organic light-emitting diode is adopted, the green light-emitting layer adopts an organic film green light-emitting layer; when the quantum dot light emitting diode QLED is adopted, the green light emitting layer adopts a quantum dot green light emitting layer.
Further, the first distributed bragg reflector layer DBR1 is configured to totally reflect blue light and high-transmittance red light, and the second distributed bragg reflector layer DBR2 is configured to reflect part of the blue light and adjust light intensity, so as to regulate light emitting proportion of RGB three-color light, so as to better realize full-color display; wherein the first and second DBR1 and 2 are each formed by stacking two kinds of films having a high refractive index and a low refractive index, each layer having a film thickness of 
And determining that N is the refractive index of the film, d is the thickness of the film, θ is the incident angle of light, lambda is the central wavelength, q is a constant, q is more than or equal to 0, and when q is a positive odd number, the reflectivity has an extreme value, and if the number of film stacking layers of the DBR is x and y, both are N or equal to N+0.5, and N is a positive integer. />
Further, the combination of high refractive index and low refractive index films includes, but is not limited to: tiO (titanium dioxide) 2 /Al 2 O 3 、TiO 2 /SiO 2 、Ta 2 O 5 /Al 2 O 3 Or HfO 2 /SiO 2.
Preferably, the invention also provides a manufacturing method of the triode-regulated hybrid structure full-color display device, which comprises the following steps:
step S1: providing a substrate, and sequentially growing a buffer layer, three semiconductor layers, a blue light emitting layer and a semiconductor layer on the substrate; and reserving the position of the G unit;
step S2: etching the layer to expose a second semiconductor layer on a part of the buffer layer to form an arrayed module;
step S3: continuing etching until the first semiconductor layer on the buffer layer is exposed, and dividing the arrayed module into an R unit and a B unit, wherein the R unit and the B unit share the buffer layer and the first semiconductor layer on the buffer layer; sequentially named a buffer layer, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a first blue light emitting layer and a fourth semiconductor layer from bottom to top; sequentially named a buffer layer, a first semiconductor layer, a fifth semiconductor layer, a sixth semiconductor layer, a second blue light emitting layer and a seventh semiconductor layer from bottom to top;
Step S4: growing a first contact electrode on the rightmost side of the first semiconductor layer, and growing a second electrode SCE1, a third electrode SCE2 on the second semiconductor layer and the fifth semiconductor layer in the R, B unit, respectively;
step S5: growing a fourth contact electrode TCE1 and a fifth contact electrode TCE2 on the surfaces of the fourth semiconductor and the seventh semiconductor in the R, B unit, respectively;
step S5: growing a fourth contact electrode TCE1 and a fifth contact electrode TCE2 on the fourth semiconductor and seventh semiconductor surfaces within the R, B cell, respectively;
step S6: preparing a red light conversion layer on the surface of a fourth contact electrode TCE1 of the R unit in a deposition mode, wherein the length of the red light conversion layer is smaller than that of the fourth contact electrode TCE1;
step S7: respectively depositing a first distributed Bragg reflection layer DBR1 and a second distributed Bragg reflection layer DBR2 on the surfaces of a red light conversion layer and a fifth contact electrode TCE2 of the R, B unit, and controlling the wavelength of emergent light, the wavelength of reflected light and the proportion of transmission and reflection by adjusting the thickness of high-low refractive index films and the number of alternately stacked films of the distributed Bragg reflection layers; the first distributed bragg reflector layer DBR1 is configured to totally reflect blue light and high-transmittance red light, and the second distributed bragg reflector layer DBR2 is configured to reflect part of the blue light and adjust light intensity, so as to adjust light emitting proportion of RGB three-color light, so as to better realize full-color display, wherein the length of the first distributed bragg reflector layer DBR1 is the same as that of the red conversion layer, and the length of the second distributed bragg reflector layer DBR2 is smaller than that of the fifth contact electrode TCE2.
Step S8: and depositing a green light structure on the position reserved for the G unit, wherein the green light structure sequentially comprises a cathode, an electron injection layer, an electron transport layer, a green light emitting layer, a hole transport layer, a hole injection layer and a transparent anode, and the length of the cathode is longer than that of other functional layers.
Further, the substrate comprises sapphire, gaAs, gaP, gaN, znSe, siC, si, znSe.
Further, the buffer layer, the first semiconductor layer, the second semiconductor layer, the third semiconductor layer, the first blue light emitting layer, the fourth semiconductor layer, the fifth semiconductor layer, the sixth semiconductor layer, the seventh semiconductor layer and the second blue light emitting layer are formed in an epitaxial, deposition, coating, assembly, transfer and attaching mode.
Further, the buffer layer, the first semiconductor layer, the second semiconductor layer, the third semiconductor layer, the first blue light emitting layer, the fourth semiconductor layer, the fifth semiconductor layer, the sixth semiconductor layer, the seventh semiconductor layer and the second blue light emitting layer comprise a single-layer semiconductor structure with the same doping concentration or a multi-layer semiconductor structure with graded or graded doping concentration.
Compared with the prior art, the invention has the following beneficial effects:
(1) Compared with an ordinary color LED, the triode-regulated hybrid structure full-color display device provided by the invention integrates a peripheral amplification driving circuit in a light-emitting chip, and one driving electrode is added as a control end to amplify the power of an input signal, so that the light-emitting chip is driven by a low-power input signal, the design complexity of the driving circuit of a semiconductor display device, particularly a mu LED display device, is effectively reduced, and the integration level of the LED display device is improved.
(2) A low-power variable input signal is respectively applied between a first contact electrode, a second contact electrode and a third contact electrode, a forward bias voltage is respectively applied between the first contact electrode and a fourth contact electrode and a fifth contact electrode, a blue light chip in a B unit is driven, the blue light chip in the R unit emits blue light to excite a red conversion layer to emit red light, a voltage is applied between a cathode and a transparent anode in a G unit to excite green light, and full-color display is realized.
(3) Compared with the traditional colorized light-emitting diode display, the B unit and the R unit are semiconductor devices regulated by the tripolar luminous tube, the G unit is low in cost, simple in processing technology, rich in luminous color and easy to integrate an OLED or QLED display device, the manufacturing method is simple and convenient, the cost is low, the electroluminescence, the photoluminescence and the color conversion are combined, and the R, G, B color development module can be quickly and effectively prepared on the same substrate, so that full-color display is realized; and the color rendering property, the color purity and the conversion efficiency are high, which is beneficial to promoting the semiconductor display, in particular to the industrialization efficiency and the market competitiveness of mu LED.
(4) The first triode and the second triode can play a role in amplifying the power of the input signal, and the light-emitting chip is driven to emit light by using a low-power input signal; meanwhile, the first triode and the second triode can effectively reduce the design complexity of a driving circuit of the light-emitting device and improve the integration level of the display device.
(5) The device provided by the invention can amplify the power of the input signal, realizes the driving of the LED by using a low-power input signal, effectively reduces the design complexity of a driving circuit of the LED display device, especially a mu LED display device, and improves the integration level of the LED display device. In addition, the manufacturing method provided by the invention is simple, convenient, quick and effective, combines electroluminescence, photoluminescence and color conversion, and easily prepares the R, G, B color development module on the same substrate to realize full-color display. The green light module can be an OLED or a QLED, and is combined with the triode to form an inorganic/organic or inorganic/inorganic novel hybrid structure full-color triode device, so that the advantages of the green light module and the triode device can be fully exerted, the green light module has unique application on display, the semiconductor display can be greatly promoted, and the industrialization efficiency and the market competitiveness of the mu LED are particularly improved.
Drawings
FIG. 1 is a schematic cross-sectional view of a full-color display device according to an embodiment of the present invention; wherein 1 is a sapphire substrate, 2 is a buffer layer, 3 is an R unit, 4 is a B unit, 9 is a G unit, 301 is a first semiconductor layer, 302 is a second semiconductor layer or a fifth semiconductor layer, 303 is a third semiconductor layer or a sixth semiconductor layer, 304 is a first blue light emitting layer or a second blue light emitting layer, 305 is a fourth semiconductor layer or a seventh semiconductor layer, 4 is a first contact electrode, 501 and 502 are a second contact electrode SCE1 and third contact electrode SCE2, 601 and 602 are a fourth contact electrode TCE1 and fifth contact electrode TCE2,7 are red light conversion layers, 801 is a first distributed bragg reflector DBR1, 802 is a first distributed bragg reflector layer DBR2, 901 is a cathode, 903 is an electron injection layer, 904 is a green light emitting layer, 905 is a hole transport layer, and 906 is a hole injection layer 907 is a transparent anode.
Fig. 2 is a process for manufacturing a full-color display device according to an embodiment of the present invention.
Fig. 3 is a schematic diagram of a driving method of a full-color display device according to an embodiment of the invention.
Fig. 4 is a driving equivalent circuit of a full-color display device according to an embodiment of the present invention.
Detailed Description
The invention will be further described with reference to the accompanying drawings and examples.
It should be noted that the following detailed description is illustrative and is intended to provide further explanation of the present application. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments in accordance with the present application. As used herein, the singular is also intended to include the plural unless the context clearly indicates otherwise, and furthermore, it is to be understood that the terms "comprises" and/or "comprising" when used in this specification are taken to specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof.
As shown in fig. 1, the embodiment provides a triode-regulated hybrid structure full-color display device, which comprises a substrate, and an R unit, a B unit and a G unit, wherein the R unit is arranged on the substrate and is used for displaying red light, the B unit is used for displaying blue light and the G unit is used for displaying green light, and the R unit, the B unit and the G unit are sequentially arranged along the transverse direction; the R unit comprises a buffer layer 2 arranged on a substrate, a first triode arranged on the buffer layer 2, a first blue light emitting chip and a color conversion layer which are sequentially arranged on the first triode from bottom to top; the B unit comprises a buffer layer 2 arranged on a substrate, a second triode arranged on the buffer layer, a second blue light chip arranged on the second triode from bottom to top, and a second distributed Bragg reflection layer DBR2802 for partially reflecting blue light; the G unit includes, from bottom to top, a cathode 901, an electron injection layer 902, an electron transport layer 903, a green light emitting layer 904, a hole transport layer 905, a hole injection layer 906, and a transparent anode 907; the first triode and the second triode amplify the power of the input signal so as to drive the first blue light emitting chip and the second blue light emitting chip to emit light by using the low-power input signal.
In this embodiment, the color conversion layer includes a red light conversion layer 7 for displaying red light and a first distributed bragg reflection layer DBR1801, which are sequentially disposed from bottom to top.
In this embodiment, the first transistor includes, from bottom to top, a first semiconductor layer 301, a second semiconductor layer 302, a third semiconductor layer 303, a first contact electrode 4 led out from the first semiconductor layer, and a second contact electrode SCE1501 led out from within a unit of the second semiconductor layer R; the first blue light emitting chip comprises a third semiconductor layer 303, a first blue light emitting layer 304, a fourth semiconductor layer 305 and a fourth contact electrode TCE1601 led out from the fourth semiconductor layer R unit from bottom to top; the second triode comprises a first semiconductor layer 301, a fifth semiconductor layer 302, a sixth semiconductor layer 303, a first contact electrode 4 led out of the first semiconductor layer, and a third contact electrode SCE2502 led out of a second semiconductor layer B unit from bottom to top; the second blue light emitting chip comprises a sixth semiconductor layer 303, a second blue light emitting layer 304, a seventh semiconductor layer 305 and a fifth contact electrode TCE2602 led out from the seventh semiconductor layer B unit from bottom to top; the R unit and the B unit share the same first contact electrode 4; a variable input signal is respectively applied between the first contact electrode 4 and the second contact electrode SCE1501 and between the first contact electrode 4 and the third contact electrode SCE2502, a forward bias voltage is respectively applied between the first contact electrode 4 and the fourth contact electrode TCE1601 and between the first contact electrode 4 and the fifth contact electrode TCE2602 to drive the second blue light emitting chip in the B unit to emit blue light, the first blue light emitting chip in the R unit to emit blue light and further excite the red light conversion layer to emit red light, and then a voltage is applied between the cathode and the transparent anode in the G unit to excite green light so as to realize full-color display;
The second semiconductor layer 302 and the fifth semiconductor layer 302 are made of the same material, the third semiconductor layer 303 and the sixth semiconductor layer 303 are made of the same material, and the fourth semiconductor layer 305 and the seventh semiconductor layer 305 are made of the same material.
In this embodiment, the first blue light emitting layer excites the red light conversion layer to obtain red light in the R unit, and the red light conversion layer uses red quantum dot material or phosphor or a combination of the two and other polymers.
In this embodiment, the first semiconductor layer 301 is an N-type semiconductor layer, the second semiconductor layer 302 is a P-type semiconductor layer, the third semiconductor layer 303 is an N-type semiconductor layer, the fourth semiconductor layer 305 is a P-type semiconductor layer, the fifth semiconductor layer 302 is a P-type semiconductor layer, the sixth semiconductor layer 303 is an N-type semiconductor layer, the seventh semiconductor layer 305 is a P-type semiconductor layer or the first semiconductor layer 301 is a P-type semiconductor layer, the second semiconductor layer 302 is an N-type semiconductor layer, the third semiconductor layer 303 is a P-type semiconductor layer, the fourth semiconductor layer 305 is an N-type semiconductor layer, and the fifth semiconductor layer 302 is an N-type semiconductor layer, the sixth semiconductor layer 303 is a P-type semiconductor layer, and the seventh semiconductor layer 305 is an N-type semiconductor layer.
In this embodiment, the third semiconductor layer 303 can be used as a collector of the first triode, and the third semiconductor layer 303 can also be used as a cathode or an anode of the first blue light emitting chip; the sixth semiconductor layer 303 can function as a collector electrode of the second triode and also as a cathode or anode electrode of the second blue light emitting chip.
In this embodiment, the firstThe semiconductor layer 301 is a semiconductor layer with a heavy doping concentration, which is 1 to 5 orders of magnitude higher than the doping concentration of the second semiconductor layer 302; the thickness of the second semiconductor layer 302 is 0.5nm to 2 μm, which is the same as that of the fifth semiconductor layer 302; host materials of the second semiconductor layer 302 include, but are not limited to GaAs, gaP, gaN, znSe, siC, si, znSe, graphene, black phosphorus, moS 2 CNT, cuPc, alq3 organic semiconductor material.
In the present embodiment, the thickness of the first semiconductor layer 301 is 0.5 μm to 5 μm, the thickness of the third semiconductor layer 303 and the thickness of the sixth semiconductor layer 303 are each 0.5 μm to 5 μm, and the thickness of the fourth semiconductor layer 305 and the thickness of the seventh semiconductor layer 305 are each 10nm to 2 μm; the bulk materials of the first, third and fourth semiconductor layers 301, 303, 305 include, but are not limited to, gaAs, gaP, gaN, znSe, siC, si, znSe inorganic semiconductor materials and CuPc and Alq3 organic semiconductor materials.
In this embodiment, the first contact electrode 4 forms an ohmic contact with the first semiconductor layer 301; the second contact electrode SCE1601 and the second semiconductor layer 302 form an ohmic contact; the third contact SCE2602 and the fifth semiconductor layer 302 form an ohmic contact; the fourth contact electrode TCE1801 forms an ohmic contact with the fourth semiconductor layer 305; the seventh semiconductor layer 305 of the fifth electrode TCE2802 forms an ohmic contact; the fourth contact electrode TCE1801 is a transparent electrode.
In the present embodiment, when the first semiconductor layer 301 is an N-type semiconductor layer, the second semiconductor layer 302 is a P-type semiconductor layer, the third semiconductor layer 303 is an N-type semiconductor layer, the fourth semiconductor layer 305 is a P-type semiconductor layer, and the fifth semiconductor layer 302 is a P-type semiconductor layer, the sixth semiconductor layer 303 is an N-type semiconductor layer, and the seventh semiconductor layer 305 is a P-type semiconductor layer, the voltage signal applied between the first contact electrode 4 and the second electrode SCE1601, the third electrode SCE2602 is positive, and the voltage signal applied between the first contact electrode and the fourth electrode TCE1801, the fifth electrode TCE2802 is positive;
when the first semiconductor layer 301 is a P-type semiconductor layer, the second semiconductor layer 302 is an N-type semiconductor layer, the third semiconductor layer 303 is a P-type semiconductor layer, the fourth semiconductor layer 305 is an N-type semiconductor layer, and the fifth semiconductor layer 302 is an N-type semiconductor layer, the sixth semiconductor layer 303 is a P-type semiconductor layer, and the seventh semiconductor layer 305 is an N-type semiconductor layer, the voltage signal applied between the first contact electrode 4 and the second and third electrodes SCE1501, SCE2502 is negative, and the voltage model applied between the first contact electrode 4 and the fourth and fifth electrodes TCE1601, TCE2602 is negative.
In the present embodiment, the voltage amplitude applied between the first contact electrode 4 and the second and third electrodes SCE1501, SCE2502 is smaller than the voltage amplitude applied between the first contact electrode 4 and the fourth and fifth electrodes TCE1601, TCE 2602.
In this embodiment, the first blue light emitting layer 304 and the second blue light emitting layer 304 are each composed of a multiple quantum well active layer, a hole blocking layer or an electron blocking layer for improving the carrier recombination efficiency; or each of the organic thin films having a light emitting function and a functional layer for improving the carrier recombination efficiency; or the nano material film with the light-emitting function and the functional layer for improving the carrier recombination efficiency.
In this embodiment, the G unit is an organic light emitting diode or a quantum dot light emitting diode QLED; wherein, when an organic light-emitting diode is adopted, the green light-emitting layer adopts an organic film green light-emitting layer; when the quantum dot light emitting diode QLED is adopted, the green light emitting layer adopts a quantum dot green light emitting layer.
In this embodiment, the first distributed bragg reflector layer DBR1801 is configured to totally reflect blue light and high-transmittance red light, and the second distributed bragg reflector layer DBR2802 is configured to reflect part of the blue light and adjust the light intensity, so as to regulate the light emitting ratio of the RGB three-color light, so as to better realize full-color display; wherein the first DBR1801 and the second DBR2802 are each formed by stacking two films having a high refractive index and a low refractive index, each layer having a film thickness of 
And determining that N is the refractive index of the film, d is the thickness of the film, θ is the incident angle of light, lambda is the central wavelength, q is a constant, q is more than or equal to 0, and when q is a positive odd number, the reflectivity has an extreme value, and if the number of film stacking layers of the DBR is x and y, both are N or equal to N+0.5, and N is a positive integer.
In this embodiment, the combination of high refractive index and low refractive index films includes, but is not limited to: tiO (titanium dioxide) 2 /Al 2 O 3 、TiO 2 /SiO 2 、Ta 2 O 5 /Al 2 O 3 Or HfO 2 /SiO 2 The former is a high refractive index film, and the latter is a low refractive index film.
Preferably, the present embodiment further provides a method for manufacturing a triode-regulated hybrid structure full-color display device, which includes the following steps:
step S1: providing a substrate, and sequentially growing a buffer layer, three semiconductor layers, a blue light emitting layer and a semiconductor layer on the substrate; and reserving the position of the G unit;
step S2: etching the layer to expose a second semiconductor layer on a part of the buffer layer to form an arrayed module;
step S3: continuing etching until the first semiconductor layer on the buffer layer is exposed, and dividing the arrayed module into an R unit and a B unit, wherein the R unit and the B unit share the buffer layer and the first semiconductor layer on the buffer layer; the layers of the R cell are named, in order from bottom to top, a buffer layer 2, a first semiconductor layer 301, a second semiconductor layer 302, a third semiconductor layer 303, a first blue light emitting layer 304, a fourth semiconductor layer 305; the layers in the B cell are named, in order from bottom to top, a buffer layer 2, a first semiconductor layer 301, a fifth semiconductor layer 302, a sixth semiconductor layer 303, a second blue light emitting layer 304, a seventh semiconductor layer 305;
Step S4: a first contact electrode 4 is grown on the rightmost side on the first semiconductor layer 301, and a second electrode SCE1501, a third electrode SCE2502 are grown on the second semiconductor layer 302 and the fifth semiconductor layer 303 in the R, B unit, respectively;
step S5: fourth and fifth contact electrodes TCE1601 and TCE2602 are grown on the surfaces of the fourth and seventh semiconductors 305 and 305 within the R, B cell, respectively;
step S6: preparing a red light conversion layer on the surface of a fourth contact electrode TCE1601 of the R unit in a deposition mode, wherein the length of the red light conversion layer is smaller than that of the fourth contact electrode TCE1601;
step S7: the first distributed Bragg reflection layer DBR1801 and the second distributed Bragg reflection layer DBR2802 are respectively deposited on the surfaces of the red light conversion layer and the fifth contact electrode TCE2602 of the R, B unit, and the wavelength of emergent light, the wavelength of reflected light and the proportion of transmission and reflection are controlled by adjusting the thickness of the high-low refractive index films of the distributed Bragg reflection layer and the number of alternately stacked films; the first distributed bragg reflector layer DBR1 is configured to totally reflect blue light and highly transmit red light, and the second distributed bragg reflector layer DBR2 is configured to reflect part of the blue light and adjust the light intensity, so as to adjust the light emitting ratio of the RGB three-color light, so as to better realize full-color display, where the length of the first distributed bragg reflector layer DBR1801 is the same as the length of the red conversion layer, and the length of the second distributed bragg reflector layer DBR2802 is less than the length of the fifth contact electrode TCE2.
Step S8: a green light structure is deposited on a position reserved for the G cell, and sequentially includes a cathode 901, an electron injection layer 902, an electron transport layer 903, a green light emitting layer 904, a hole transport layer 905, a hole injection layer 906, and a transparent anode 907, wherein the length of the cathode is greater than that of the other functional layers.
In this embodiment, the substrate comprises sapphire, gaAs, gaP, gaN, znSe, siC, si, znSe. The substrate can be kept on the device, and can be removed in the manufacturing process of the full-color triode-controlled light-emitting device.
In this embodiment, the buffer layer 2, the first semiconductor layer 301, the second semiconductor layer 302, the third semiconductor layer 303, the first blue light emitting layer 304, the fourth semiconductor layer 305, the fifth semiconductor layer 302, the sixth semiconductor layer 303, the seventh semiconductor layer 305, and the second blue light emitting layer 304 are formed by epitaxy, deposition, coating, assembly, transfer, and bonding.
In this embodiment, the buffer layer 2, the first semiconductor layer 301, the second semiconductor layer 302, the third semiconductor layer 303, the first blue light emitting layer 304, the fourth semiconductor layer 305, the fifth semiconductor layer 302, the sixth semiconductor layer 303, the seventh semiconductor layer 305, and the second blue light emitting layer 304 are a single-layer semiconductor structure having the same doping concentration or a multi-layer semiconductor structure having a graded or graded doping concentration.
Preferably, a specific example of the present embodiment is as follows:
fig. 1 is a schematic diagram of a triode-controlled hybrid full-color display device according to an embodiment of the present invention. Fig. 2 is a process for preparing a triode-controlled hybrid structure full-color display device according to an embodiment of the present invention. Fig. 3 is a schematic diagram of a driving method of a triode-controlled hybrid full-color display device according to an embodiment of the present invention. Fig. 4 is a driving equivalent circuit of a triode-controlled hybrid full-color display device according to an embodiment of the present invention.
Referring to fig. 1, the present embodiment discloses a triode-regulated hybrid structure full-color display device, which includes an R unit 3 disposed on a substrate 1 and sequentially constituting in a lateral direction an R unit 3 for displaying red light, a B unit 4 for displaying blue light, and a G unit 9 for displaying green light. The R unit 3 comprises a buffer layer 2 arranged on the substrate 1, a first triode, a first blue light emitting chip and a color conversion layer which are arranged on the buffer layer 2; the B unit 4 comprises a buffer layer 2 arranged on the substrate 1, and a second triode and a second blue light emitting chip which are arranged on the buffer layer 2; the G unit 9 includes a cathode 901, an electron injection layer 902, an electron transport layer 903, a green light emitting layer 904, a hole transport layer 905, a hole injection layer 906, and a transparent anode 907 from bottom to top.
The first triode comprises a first semiconductor layer 301, a second semiconductor layer 302, a third semiconductor layer 303, a first contact electrode 4 led out of the first semiconductor layer 301 and a second contact electrode SCE1501 led out of the second semiconductor layer 302R in the unit 3 from bottom to top; the second transistor includes a first semiconductor layer 301, a fifth semiconductor layer 302, a sixth semiconductor layer 303, and a first contact electrode 4 led out from the first semiconductor layer 301, and a third contact electrode SCE2502 led out from the fifth semiconductor layer 302 from within the B cell 4; the first blue light emitting chip comprises a third semiconductor layer 303, a first blue light emitting layer 304, a fourth semiconductor layer 305 and a fourth contact electrode TCE1601 led out from the fourth semiconductor layer R unit 3 from bottom to top; the second blue light emitting chip includes, from bottom to top, a sixth semiconductor layer 303, a second blue light emitting layer 304, a seventh semiconductor layer 305, and a fifth contact electrode TCE2602 led out from within the B cell 4; the color conversion layer includes a conversion layer 7 for displaying red light in the R cell 3 and a first distributed bragg reflection layer (DBR 1) 801, and a second distributed bragg reflection layer (DBR 2) 802 for partially reflecting blue light in the b cell 4.
In this embodiment, the substrate 1 is a sapphire substrate, the buffer layer 2 is made of AlN, the main material of the epitaxial layer is GaN-based, specifically, the first semiconductor layer 301 is an N-GaN layer, the second semiconductor layer or the fifth semiconductor layer 302 is a P-GaN layer, the third semiconductor layer or the sixth semiconductor layer 303 is an N-GaN layer, and the first and second blue light emitting layers 304 are In for 3 periods a Ga 1-a N quantum well active layer and Al b Ga 1-b The hole blocking layer or the electron blocking layer composed of N, and the fourth semiconductor layer or the seventh semiconductor layer 305 is P-GaN. The first contact electrode 4 is a gold-copper electrode, the second contact electrode SCE1501 and the third contact electrode SCE2502 are both gold-copper electrodes, and the transparent fourth contact electrode TCE1601 and the fifth contact electrode TCE2602 are both Indium Tin Oxide (ITO). The light conversion layer 7 adopts a red quantum dot film, and the distributed Bragg reflection layer 8 is formed by TiO 2 And Al 2 O 3 Two films are alternately stacked, preferably TiO 2 With a thickness of 45nm, al 2 O 3 The DBR1 comprises 13 layers of stacked films, the DBR2 comprises 5 layers of stacked films, and the top and bottom of the stacked films are TiO 2 . The cathode 901 is made of Al, the electron injection layer 902 is LiF, and the electron transport layer 903 is Tm PyPB is used for the green light emitting layer 904, alq3 is used for the hole transporting layer 905, NPB is used for the hole injecting layer 906, HAT-CN is used for the transparent anode 907, and ITO is used for the transparent anode.
Specifically, in this embodiment, the first semiconductor layer, the third semiconductor layer, and the sixth semiconductor layer are Mg-doped N-GaN, and the second, fourth, fifth, and seventh semiconductor layers are Si-doped P-GaN.
Further, in the present embodiment, the Mg doping concentration of the first semiconductor layer is 1×10 21 cm -3 The second and fifth semiconductor layers have Si doping concentration of 5×10 18 cm -3 The third and sixth semiconductor layers have a Mg doping concentration of 1×10 19 cm -3 The Si doping concentration of the fourth and seventh semiconductor layers is 5×10 18 cm -3 。
Referring to fig. 1, and referring to fig. 2 to 3, a method for manufacturing a triode-controlled hybrid full-color display device according to the first embodiment is described in detail, and is specifically implemented according to the following steps:
s11: providing a sapphire substrate 1, placing the sapphire substrate 1 in an MOCVD reaction chamber, setting the temperature to 800-1200 ℃, introducing trimethylaluminum and ammonia gas, growing a buffer layer 2 on the sapphire substrate 1, a first semiconductor layer N-GaN layer on the buffer layer, a second semiconductor layer P-GaN layer on the buffer layer, a three semiconductor layer N-GaN layer on the buffer layer, a multi-quantum well blue light-emitting layer and four semiconductor layers on the buffer layer by using hydrogen as a carrier, wherein the thicknesses of the three semiconductor layers are 1000nm, 2 mu m, 0.5 mu m, 3 mu m, 200nm and 1 mu m respectively, and meanwhile reserving the position of a G unit on the substrate;
S12: etching the layer to expose a second semiconductor layer on part of the buffer layer by ICP to form an arrayed module;
s13: continuing etching on the second semiconductor layer on the buffer layer until the first semiconductor layer on the buffer layer is exposed, and dividing the arrayed module into an R unit and a B unit, wherein the R unit and the B unit share the buffer layer and the first semiconductor layer on the buffer layer; sequentially named a buffer layer, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a first blue light emitting layer and a fourth semiconductor layer from bottom to top; sequentially named a buffer layer, a first semiconductor layer, a fifth semiconductor layer, a sixth semiconductor layer, a second blue light emitting layer and a seventh semiconductor layer from bottom to top;
s14: growing a first contact electrode 4 on the rightmost side of the first semiconductor layer, and growing SCE1501 and SCE2502 on the second and fifth semiconductor layers 302 exposed in the R, B unit, respectively;
s15: TCE1601 and TCE2602 are grown on the surfaces of the fourth and seventh semiconductors 305 in the R, B unit respectively, and the thickness is 150nm;
s16: preparing a red conversion layer 7 on the TCE1601 surface of the R unit 3 by a deposition mode, wherein the length of the red conversion layer is smaller than that of the TCE1601;
S17: the DBR1801 and the DBR2802 are respectively deposited on the red conversion layer 7 and the TCE2602 of the R, B unit, and the wavelength of the outgoing light, the wavelength of the reflected light, and the ratio of transmission and reflection are controlled by adjusting the thickness of the high-low refractive index films and the number of alternately stacked films of the distributed bragg reflection layer. The DBR1 is used for totally reflecting blue light and high transmitting red light, the DBR2 is used for reflecting part of the blue light and adjusting the light intensity, so that the light emitting proportion of RGB three-color light is regulated and controlled, full-color display is better realized, the length of the DBR1 is the same as that of a red conversion layer, and the length of the DBR2 is smaller than TCE2.
S18: and depositing a green light structure on the position reserved for the G unit 9, wherein the green light structure sequentially comprises a cathode Al 901, an electron injection layer LiF 902, an electron transport layer TmPyPB 903, a green light emitting layer Alq3904, a hole transport layer NPB 905, a hole injection layer HAT-CN 906 and a transparent anode ITO 907, and the thicknesses of the green light structure are respectively 150nm, 1nm, 20nm, 40nm, 50nm, 5nm and 200nm, wherein the length of the cathode is longer than that of other functional layers.
Example two
In this embodiment, the substrate 1 is a sapphire substrate, the buffer layer 2 is made of AlN, the main material of the epitaxial layer is a GaN-based material, specifically, the first semiconductor layer on the buffer layer is an N-GaN layer, the second semiconductor layer on the buffer layer is a P-GaN layer, the third semiconductor layer on the buffer layer is an N-GaN layer, and the following steps are performed Is 3 cycles of In a Ga 1-a N quantum well active layer and Al b Ga 1-b The hole blocking layer or the electron blocking layer formed by N, and the fourth semiconductor layer on the buffer layer is P-GaN. The first contact electrode 4 is a gold-copper electrode, the second contact electrode SCE1501 and the third contact electrode SCE2502 are both gold-copper electrodes, and the transparent fourth contact electrode TCE1601 and the fifth contact electrode TCE2602 are both Indium Tin Oxide (ITO). The light conversion layer 7 adopts a red quantum dot film, and the distributed Bragg reflection layer 8 is formed by TiO 2 And Al 2 O 3 Two films are alternately stacked, preferably TiO 2 With a thickness of 45nm, al 2 O 3 The DBR1 comprises 13 layers of stacked films, the DBR2 comprises 5 layers of stacked films, and the top and bottom of the stacked films are TiO 2 . The cathode 901 is made of Al, the electron injection layer 902 and the electron transport layer 903 are ZnO, the green light emitting layer 904 is made of CdSe/ZnS QD, the hole transport layer 905 is TFB, the hole injection layer 906 is PEDOT, and the transparent anode 907 is ITO.
Specifically, in this embodiment, the first, third and sixth semiconductor layers are Mg-doped N-GaN, and the second, fifth, fourth and seventh semiconductor layers are Si-doped P-GaN.
Further, in the present embodiment, the Mg doping concentration of the first semiconductor layer is 1×10 21 cm -3 The second and fifth semiconductor layers have Si doping concentration of 5×10 18 cm -3 The third and sixth semiconductor layers have a Mg doping concentration of 1×10 19 cm -3 The Si doping concentration of the fourth and seventh semiconductor layers is 5×10 18 cm -3 。
Referring to fig. 1, and referring to fig. 2 to 3, a method for manufacturing a triode-controlled hybrid full-color display device according to a second embodiment is described in detail, and is specifically implemented according to the following steps:
s11: providing a sapphire substrate 1, placing the sapphire substrate 1 in an MOCVD reaction chamber, setting the temperature to 800-1200 ℃, introducing trimethylaluminum and ammonia gas, growing a buffer layer 2, a first semiconductor layer N-GaN layer on the buffer layer, a second semiconductor layer P-GaN layer on the buffer layer, a three semiconductor layer N-GaN layer 303 on the buffer layer, a multi-quantum well blue light-emitting layer and four semiconductor layers on the buffer layer on the sapphire substrate 1 by using hydrogen as a carrier, wherein the thicknesses of the three semiconductor layers are 1000nm, 2 mu m, 0.5 mu m, 3 mu m, 200nm and 1 mu m respectively, and reserving the position of a G unit on the substrate;
s12: etching the layer to expose a second semiconductor layer on part of the buffer layer by ICP to form an arrayed module;
s13: continuing etching on the second semiconductor layer on the buffer layer until the first semiconductor layer on the buffer layer is exposed, and dividing the arrayed module into an R unit and a B unit, wherein the R unit and the B unit share the buffer layer and the first semiconductor layer on the buffer layer; sequentially named a buffer layer, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a first blue light emitting layer and a fourth semiconductor layer from bottom to top; sequentially named a buffer layer, a first semiconductor layer, a fifth semiconductor layer, a sixth semiconductor layer, a second blue light emitting layer and a seventh semiconductor layer from bottom to top;
S14: growing a first contact electrode 4 on the rightmost side of the first semiconductor layer, and growing SCE1501 and SCE2502 on the second and fifth semiconductor layers 302 exposed in the R, B unit, respectively;
s15: the contact electrodes TCE1601 and TCE2602 are respectively grown on the surfaces of the fourth semiconductor 305 and the seventh semiconductor 305 in the R, B unit, and the thicknesses of the contact electrodes TCE1601 and TCE2602 are 150nm;
s16: preparing a red conversion layer 7 on the surface of a contact electrode TCE1601 of the R unit 3 in a deposition mode, wherein the length of the red conversion layer is smaller than that of the TCE1601;
s17: the DBR1801 and the DBR2802 are respectively deposited on the red conversion layer 7 and the contact electrode TCE2602 of the R, B unit, and the wavelength of the outgoing light, the wavelength of the reflected light, and the ratio of transmission and reflection are controlled by adjusting the thickness of the high-low refractive index films of the distributed bragg reflection layer and the number of alternately stacked film layers. The DBR1 is used for totally reflecting blue light and high transmitting red light, the DBR2 is used for reflecting part of the blue light and adjusting the light intensity, so that the light emitting proportion of RGB three-color light is regulated and controlled, full-color display is better realized, the length of the DBR1 is the same as that of a red conversion layer, and the length of the DBR2 is smaller than TCE2.
S18: a green light structure is deposited on the position reserved for the G unit 9, and sequentially comprises a cathode Al 901, an electron injection layer 902, an electron transport layer ZnO 903, a green light emitting layer CdSe/ZnS QD 904, a hole transport layer TFB 905, a hole injection layer PEDOT 906, and a transparent anode ITO 907, wherein the thicknesses are respectively 100nm, 40nm, 20nm, 25nm, 35nm, and 150nm, and the length of the cathode is greater than that of other functional layers.
FIG. 3 is a schematic diagram showing a driving method of R, G, B units of a triode-controlled hybrid full-color display device, in which a low-power variable input signal V is applied between a first contact electrode and second and third contact electrodes SCE1 and SCE2 for R and B units 1 Simultaneously applying a forward bias voltage V between the first contact electrode and the transparent fourth contact electrode TCE1, the fifth contact electrode TCE2 2 The blue light emitting chip in the B unit can emit blue light, the blue light emitting chip in the R unit emits blue light to excite the red conversion layer to emit red light, the power amplification effect of the input signal is achieved, and the LED is driven by the low-power input signal. The equivalent circuit is shown in fig. 4, the NPN triode is connected with the common emitter of the LED, the base electrode and the emitter form an input loop, namely a small-power variable input signal V is applied between the first contact electrode and the second contact electrode 1 The collector and emitter form an output loop, i.e. a forward bias voltage V is applied between the first contact electrode and the third contact electrode 2 The triode can drive the LED to emit light. And for the G unit, only a fixed positive voltage is applied between the cathode and the anode to be lighted, so that full-color display is realized.
While the invention has been described with respect to what is presently considered to be the most practical and preferred embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims. But the invention is simple to improve and modify, equivalent to change and modify, still belong to the protective scope of the technical scheme of the invention.
Claims (17)
1. A triode-regulated hybrid structure full-color display device is characterized in that: the LED display device comprises a substrate, and an R unit, a B unit and a G unit, wherein the R unit is arranged on the substrate and is used for displaying red light, the B unit is used for displaying blue light and the G unit is used for displaying green light, and the R unit, the B unit and the G unit are arranged on the substrate and are formed in sequence along the transverse direction; the R unit comprises a buffer layer arranged on the substrate, a first triode arranged on the buffer layer, a first blue light emitting chip and a color conversion layer which are sequentially arranged on the first triode from bottom to top; the B unit comprises a buffer layer arranged on a substrate, a second triode arranged on the buffer layer, a second blue light emitting chip arranged on the second triode from bottom to top, and a second distributed Bragg reflector layer DBR2 for partially reflecting blue light; the G unit comprises a cathode, an electron injection layer, an electron transport layer, a green light emitting layer, a hole transport layer, a hole injection layer and a transparent anode from bottom to top; the first triode and the second triode amplify the power of the input signal so as to drive the first blue light emitting chip and the second blue light emitting chip to emit light by using the low-power input signal;
The first triode comprises a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a first contact electrode led out of the first semiconductor layer and a second contact electrode SCE1 led out of a second semiconductor layer R unit from bottom to top; the first blue light emitting chip comprises a third semiconductor layer, a first blue light emitting layer, a fourth semiconductor layer and a fourth contact electrode TCE1 which is led out from the inside of a fourth semiconductor layer R unit from bottom to top;
the second triode comprises a first semiconductor layer, a fifth semiconductor layer, a sixth semiconductor layer, a first contact electrode led out of the first semiconductor layer and a third contact electrode SCE2 led out of a fifth semiconductor layer B unit from bottom to top; the second blue light emitting chip comprises a sixth semiconductor layer, a second blue light emitting layer, a seventh semiconductor layer and a fifth contact electrode TCE2 led out from the seventh semiconductor layer B unit from bottom to top; the R unit and the B unit share the same first contact electrode; applying a variable input signal between the first contact electrode and the second contact electrode SCE1 and between the first contact electrode and the third contact electrode SCE2, applying a forward bias voltage between the first contact electrode and the fourth contact electrode TCE1 and between the first contact electrode and the fifth contact electrode TCE2, respectively, driving the second blue light emitting chip in the B unit to emit blue light, driving the first blue light emitting chip in the R unit to emit blue light and further driving the red light conversion layer to emit red light, and applying a voltage between the cathode and the transparent anode in the G unit to excite green light for realizing full-color display;
The second semiconductor layer and the fifth semiconductor layer are made of the same material, the third semiconductor layer and the sixth semiconductor layer are made of the same material, and the fourth semiconductor layer and the seventh semiconductor layer are made of the same material.
2. The triode-regulated hybrid full-color display device according to claim 1, wherein: the color conversion layer includes a red light conversion layer and a first distributed Bragg reflection layer DBR1 for displaying red light, which are sequentially disposed from bottom to top.
3. The triode-regulated hybrid full-color display device according to claim 1, wherein: the first blue light emitting layer excites the red light conversion layer to obtain red light in the R unit, and the red light conversion layer adopts red quantum dot materials or fluorescent powder or a combination of the red quantum dot materials or fluorescent powder and other polymers.
4. The triode-regulated hybrid full-color display device according to claim 1, wherein: the first semiconductor layer is an N-type semiconductor layer, the second semiconductor layer is a P-type semiconductor layer, the third semiconductor layer is an N-type semiconductor layer, the fourth semiconductor layer is a P-type semiconductor layer, the fifth semiconductor layer is a P-type semiconductor layer, the sixth semiconductor layer is an N-type semiconductor layer, the seventh semiconductor layer is a P-type semiconductor layer or the first semiconductor layer is a P-type semiconductor layer, the second semiconductor layer is an N-type semiconductor layer, the third semiconductor layer is a P-type semiconductor layer, the fourth semiconductor layer is an N-type semiconductor layer, and the fifth semiconductor layer is an N-type semiconductor layer, the sixth semiconductor layer is a P-type semiconductor layer, and the seventh semiconductor layer is an N-type semiconductor layer.
5. The triode-regulated hybrid full-color display device according to claim 1, wherein: the first semiconductor layer is a semiconductor layer with heavy doping concentration, and the doping concentration of the first semiconductor layer is 1 to 5 orders of magnitude higher than that of the second semiconductor layer; the thickness of the second semiconductor layer is 0.5nm to 2 μm, which is the same as that of the fifth semiconductor layer; the main material of the second semiconductor layer comprises GaAs, gaP, gaN, znSe, siC, si, znSe, graphene, black phosphorus and MoS 2 CNT, cuPc or Alq3 organic semiconductor material.
6. The triode-regulated hybrid full-color display device according to claim 1, wherein: the thickness of the first semiconductor layer is 0.5 μm to 5 μm, the thickness of the third semiconductor layer and the thickness of the sixth semiconductor layer are each 0.5 μm to 5 μm, and the thickness of the fourth semiconductor layer and the thickness of the seventh semiconductor layer are each 10nm to 2 μm; the main materials of the first semiconductor layer, the third semiconductor layer and the fourth semiconductor layer comprise GaAs, gaP, gaN, znSe, siC, si, znSe inorganic semiconductor materials or CuPc and Alq3 organic semiconductor materials.
7. The triode-regulated hybrid full-color display device according to claim 1, wherein: the first contact electrode forms ohmic contact with the first semiconductor layer; the second contact electrode SCE1 and the second semiconductor layer form an ohmic contact; the third contact SCE2 and the fifth semiconductor layer form an ohmic contact; the fourth contact electrode TCE1 forms an ohmic contact with the fourth semiconductor layer; the seventh semiconductor layer of the fifth electrode TCE2 forms an ohmic contact.
8. The triode-regulated hybrid full-color display device according to claim 4, wherein: when the first semiconductor layer is an N-type semiconductor layer, the second semiconductor layer is a P-type semiconductor layer, the third semiconductor layer is an N-type semiconductor layer, the fourth semiconductor layer is a P-type semiconductor layer, and the fifth semiconductor layer is a P-type semiconductor layer, the sixth semiconductor layer is an N-type semiconductor layer, and the seventh semiconductor layer is a P-type semiconductor layer, the voltage signal applied between the first contact electrode and the second and third electrodes SCE1, SCE2 is positive, and the voltage signal applied between the first contact electrode and the fourth and fifth electrodes TCE1, TCE2 is positive;
when the first semiconductor layer is a P-type semiconductor layer, the second semiconductor layer is an N-type semiconductor layer, the third semiconductor layer is a P-type semiconductor layer, the fourth semiconductor layer is an N-type semiconductor layer, and the fifth semiconductor layer is an N-type semiconductor layer, the sixth semiconductor layer is a P-type semiconductor layer, and the seventh semiconductor layer is an N-type semiconductor layer, the voltage signal applied between the first contact electrode and the second and third electrodes SCE1, SCE2 is negative, and the voltage model applied between the first contact electrode and the fourth and fifth electrodes TCE1, TCE2 is negative.
9. The triode-regulated hybrid full-color display device according to claim 7, wherein: the magnitude of the voltage applied between the first contact electrode and the second and third electrodes SCE1, SCE2 is smaller than the magnitude of the voltage applied between the first contact electrode and the fourth and fifth electrodes TCE1, TCE 2.
10. The triode-regulated hybrid full-color display device according to claim 1, wherein: the first blue light emitting layer and the second blue light emitting layer are both composed of a multi-quantum well active layer and a hole blocking layer or an electron blocking layer for improving the carrier recombination efficiency; or each of the organic thin films having a light emitting function and a functional layer for improving the carrier recombination efficiency; or the nano material film with the light-emitting function and the functional layer for improving the carrier recombination efficiency.
11. The triode-regulated hybrid full-color display device according to claim 1, wherein: the G unit adopts an organic light emitting diode or a quantum dot light emitting diode QLED; wherein, when an organic light-emitting diode is adopted, the green light-emitting layer adopts an organic film green light-emitting layer; when the quantum dot light emitting diode QLED is adopted, the green light emitting layer adopts a quantum dot green light emitting layer.
12. The triode-regulated hybrid full-color display device according to claim 2, wherein: the first distributed Bragg reflection layer DBR1 is used for totally reflecting blue light and transmitting high red light, and the second distributed Bragg reflection layer DBR2 is used for reflecting part of the blue light and adjusting the light intensity, so that the light emitting proportion of RGB three-color light is regulated and controlled, and full-color display is better realized; wherein the first and second DBR1 and 2 are each formed by stacking two kinds of films having a high refractive index and a low refractive index, each layer having a film thickness of
Determination of->
Refractive index of film, +.>
For the film thickness>
For the angle of incidence of light>
For the center wavelength +.>
Is constant (I)>
And when->
When the reflectivity is positive and odd, the reflectivity has extreme value, and when the number of the thin film stack layers of the DBR is x and y, the reflectivity and the number of the thin film stack layers of the DBR are both +.>
Or equal to->
，/>
Is a positive integer.
13. The triode-regulated hybrid full-color display device according to claim 12, wherein: the combination of high refractive index and low refractive index films includes: tiO (titanium dioxide) 2 /Al 2 O 3 、TiO 2 /SiO 2 、Ta 2 O 5 /Al 2 O 3 Or HfO 2 /SiO 2 。
14. A method for manufacturing a triode-regulated hybrid full-color display device according to any one of claims 1 to 13, comprising: the method comprises the following steps:
Step S1: providing a substrate, and sequentially growing a buffer layer, three semiconductor layers, a blue light emitting layer and a semiconductor layer on the substrate; and reserving the position of the G unit;
step S2: etching the layer to expose a second semiconductor layer on a part of the buffer layer to form an arrayed module;
step S3: continuing etching until the first semiconductor layer on the buffer layer is exposed, and dividing the arrayed module into an R unit and a B unit, wherein the R unit and the B unit share the buffer layer and the first semiconductor layer on the buffer layer; sequentially named a buffer layer, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a first blue light emitting layer and a fourth semiconductor layer from bottom to top; sequentially named a buffer layer, a first semiconductor layer, a fifth semiconductor layer, a sixth semiconductor layer, a second blue light emitting layer and a seventh semiconductor layer from bottom to top;
step S4: growing a first contact electrode on the rightmost side of the first semiconductor layer, and growing a second electrode SCE1, a third electrode SCE2 on the second semiconductor layer and the fifth semiconductor layer in the R, B unit, respectively;
step S5: growing a fourth contact electrode TCE1 and a fifth contact electrode TCE2 on the surfaces of the fourth semiconductor and the seventh semiconductor in the R, B unit, respectively;
Step S6: preparing a red light conversion layer on the surface of a fourth contact electrode TCE1 of the R unit in a deposition mode, wherein the length of the red light conversion layer is smaller than that of the fourth contact electrode TCE1;
step S7: respectively depositing a first distributed Bragg reflection layer DBR1 and a second distributed Bragg reflection layer DBR2 on the surfaces of a red light conversion layer and a fifth contact electrode TCE2 of the R, B unit, and controlling the wavelength of emergent light, the wavelength of reflected light and the proportion of transmission and reflection by adjusting the thickness of high-low refractive index films and the number of alternately stacked films of the distributed Bragg reflection layers; the first distributed bragg reflector layer DBR1 is configured to totally reflect blue light and highly transmit red light, and the second distributed bragg reflector layer DBR2 is configured to reflect part of the blue light and adjust light intensity, so as to adjust light emitting proportion of RGB three-color light, so as to better realize full-color display, wherein the length of the first distributed bragg reflector layer DBR1 is the same as that of the red conversion layer, and the length of the second distributed bragg reflector layer DBR2 is smaller than that of the fifth contact electrode TCE2;
step S8: and depositing a green light structure on the position reserved for the G unit, wherein the green light structure sequentially comprises a cathode, an electron injection layer, an electron transport layer, a green light emitting layer, a hole transport layer, a hole injection layer and a transparent anode, and the length of the cathode is longer than that of other functional layers.
15. The method for manufacturing a triode-controlled hybrid full-color display device according to claim 14, wherein: the substrate comprises sapphire, gaAs, gaP, gaN, znSe, siC, si, or ZnSe.
16. The method for manufacturing a triode-controlled hybrid full-color display device according to claim 14, wherein: the buffer layer, the first semiconductor layer, the second semiconductor layer, the third semiconductor layer, the first blue light emitting layer, the fourth semiconductor layer, the fifth semiconductor layer, the sixth semiconductor layer, the seventh semiconductor layer and the second blue light emitting layer are formed in an epitaxial, deposition, coating, assembling, transferring and attaching mode.
17. The method for manufacturing a triode-controlled hybrid full-color display device according to claim 14, wherein: the buffer layer, the first semiconductor layer, the second semiconductor layer, the third semiconductor layer, the first blue light emitting layer, the fourth semiconductor layer, the fifth semiconductor layer, the sixth semiconductor layer, the seventh semiconductor layer and the second blue light emitting layer are of a single-layer semiconductor structure with the same doping concentration or a multi-layer semiconductor structure with a graded doping concentration.
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