KR20080008306A - The uv led with manufacturing method thereof - Google Patents

Abstract

An UV LED and a manufacturing method thereof are provided to obtain excellent blue light by using a ZnO-based material instead of a GaN-based material. An n type thin film layer(20) for supplying electrons to an active layer is formed on a substrate(10). A p type thin film layer(40) for supplying holes to the active layer is formed on the n type thin film layer. A multi-quantum well layer(30) is formed between the n type and p type thin film layers to form the active layer having a quantum barrier and quantum well structure and to emit light through combination of the electrons and the holes. An n type electrode(22) and a p type electrode(42) are formed respectively on the n type thin film layer and the n type thin film layer to supply the external power to the n type thin film layer and the n type thin film layer. The multi-quantum well layer is formed by stacking the quantum barriers and the quantum wells to form UV light of an ZnO-based LED. The quantum barrier is formed with a compound of Zn1-yBeyO and Zn1-x-yMgxBeyO. The quantum well is made of a ZnO compound.

Description

UV light emitting device and its manufacturing method

The present invention relates to an ultraviolet light emitting device and a method of manufacturing the same, and more particularly, using a zinc oxide (ZnO) material as a next generation light emitting device instead of a gallium nitride (GaN) based material constituting a blue light emitting device among LEDs. In addition to the n-type thin film layer and the p-type thin film layer, impurities of gallium (Ga) and arsenic (As) are added to the n-type thin film layer and the p-type thin film layer, and the beryllium (Variation Well layer) of the quantum barrier and the quantum well structure By overly stacking zinc oxide (ZnO) -based materials containing Be) and magnesium (Mg), it overcomes limitations of light-emitting devices by gallium nitride (GaN) -based materials used in conventional blue light-emitting devices. Blue and ultraviolet light emitting devices to improve the quality of life through various applications by expanding the use area of zinc oxide (ZnO) materials to ultraviolet light, And to a method of manufacturing the same.

In general, an LED (Light Emitting Diode) is called a light emitting diode or a light emitting device, and when given through electricity, electrons move from a high energy level to a low place and emit a light of a specific wavelength.

Such LEDs have been commercialized as red LEDs using GaAsP compound semiconductors in 1962, along with GaP-N series green LEDs, and have been used as display light for electronic devices including information and communication devices. The development of GaN blue LEDs enables full color displays.

Representative applications of the LED include a back light for a liquid crystal display device and a keypad of a mobile phone, and in addition to a variety of outdoor large billboards, traffic signals, automobile dashboards and taillights, ports, airports, skyscrapers, warning and induction It is used in place.

In addition, LED is regarded as a next-generation national strategic item because of its advantages such as high processing speed and low power consumption of semiconductors, and environmentally friendly and high energy saving effect.

Such LEDs were developed in the order of red-green-blue, where the red wavelength is 700 nm, the green wavelength is 565 nm, and the blue wavelength is short when the wavelength is 400-450 nm. The shorter it was, the more difficult it was to develop compound semiconductors that produce light.However, in 1990, Nakamura's research team at Nichia, Japan, succeeded in developing a high-brightness blue LED with a short wavelength of less than 450nm using gallium nitride (GaN).

Looking at the gallium nitride (GaN) -based blue LED, an n-type thin film layer, which is an n-GaN nitride semiconductor layer, is grown on a sapphire substrate, and then InGaN capable of emitting light by combining electrons (-) and holes (+). An active layer of a / GaN nitride divergent well structure is formed, and then a p-type thin film layer, which is a p-GaN nitride semiconductor layer, is grown.

Then, a mesa etching is performed using photolithography to expose a portion of the n-type thin film layer, and then the n-type electrode on the n-type thin film layer, which is an n-GaN nitride semiconductor layer in the mesa-etched region. Form a thin p-type metal film through which light can pass through the p-type thin film layer, which is a p-GaN nitride semiconductor layer, and deposit a thick p-type electrode on top of the p-type metal film 16. It is composed.

However, in the case of the gallium nitride (GaN) -based blue LED configured as described above, the energy band of the gallium nitride (GaN) material is about 3.39 eV, and it has emerged as a light emitting device for white illumination using a phosphor, but the nitride The gallium (GaN) material is not only difficult to improve the p-type thin film layer, but also difficult to further development in the material and manufacturing method.

Therefore, instead of gallium nitride (GaN) based materials forming the p-type thin film layer of the blue LED, zinc oxide (ZnO) based materials have emerged alternatively, and the energy band value of the zinc oxide (ZnO) based materials is about room temperature. When the energy band is narrowed to 3.37 eV, it is very advantageous to emit light in the blue area necessary for white light emission, and the energy band can be induced to emit light in the ultraviolet area when the energy band is widened. can do.

In particular, the zinc oxide (ZnO) -based material has an exciton binding energy of 60 meV, which is theoretically better than that of gallium nitride (GaN) (28 meV), which is the main light emitting device.

However, in the case of zinc oxide (ZnO) -based material having the above theoretical characteristics, although it has been continuously studied, it has not been used as a light emitting device is a p-type thin film layer by the addition of impurities in the structure for constituting the light emitting device This is because the manufacturing of the difficult, the situation is continuing to study.

The present invention devised to solve the above problems, n-type using a zinc oxide (ZnO) -based material of the next-generation light-emitting device instead of gallium nitride (GaN) -based material constituting a blue light emitting device of the light emitting device LED In addition to forming a thin film layer and a p-type thin film layer, impurities of gallium (Ga) and arsenic (As) are added to the n-type thin film layer and the p-type thin film layer, and beryllium (Be) to the quantum well structure and the manifold well layer having a quantum well structure. And a zinc oxide (ZnO) -based material containing magnesium and magnesium (Mg), which is periodically stacked on top of each other, to overcome the limitations of the light-emitting device due to the gallium nitride (GaN) -based material used in conventional blue light emitting devices. The purpose is to enable blue light emission.

In addition, by expanding the use area of the zinc oxide (ZnO) -based material applied to the blue light emitting device of the present invention to ultraviolet light emission, there is another object to improve the quality of life in a variety of applications.

The ultraviolet light emitting device of the present invention is a zinc oxide (ZnO) ultraviolet light emitting device;

A substrate; An n-type thin film layer for supplying electrons (-) to the active layer in accordance with a power supply; A p-type thin film layer for supplying holes (+) to the active layer according to a power supply; A multi-well layer forming an active layer between the n-type thin film layer and the p-type thin film layer and an active layer having a quantum well structure and emitting light through a combination of electrons (+) and holes (+); A n-type electrode and a p-type electrode which are respectively formed in the n-type thin film layer and the p-type thin film layer to allow external power to be supplied to the n-type thin film layer and the p-type thin film layer;

The material of the quantum barrier layer is formed of Zn _{1 - Y} Be _Y O or Zn _{1 -X- Y} Mg _X Be _Y O during the formation of the multi-well layer, which is an active layer structure for forming ultraviolet rays of the zinc oxide (ZnO) -based light emitting device. By using a compound, the material of the quantum well is characterized by consisting of a structure in which the material of the quantum barrier and the material of the quantum well are periodically overlapped with each other using a compound of ZnO.

In addition, the material of the quantum barrier is formed when Zn _{1 - Y} Be _Y O, Zn _{1 -X- Y} Mg _X Be _Y when forming a multi-well layer that is an active layer structure for forming ultraviolet rays of the zinc oxide (ZnO) -based light emitting device By using a compound of any one of O, Zn _{1 -X} Mg _X O, the material of the quantum well is made of the same material as the material of the quantum barrier and the material of the quantum barrier and the material of the quantum well are periodically stacked Characterized in that consisting of. The x and y values are greater than or equal to 0 and less than or equal to 1.

In the ultraviolet-based series of the zinc oxide (ZnO) -based light emitting device, one of magnesium (Mg) and beryllium (Be) is added to the zinc oxide (ZnO) to the n-type thin film layer and the p-type thin film layer, respectively. The amount of magnesium (Mg) or beryllium (Be) is controlled according to the structure of the well layer.

In the blue and ultraviolet light emitting devices of the present invention configured as described above, the material of the quantum barrier and the material of the quantum well are periodically stacked so that the multi-well layer structure has 5 to 10 cycles.

In addition, in the blue and ultraviolet light emitting devices of the present invention, the compound of the quantum barrier material and the quantum well material is characterized in that the growth by the molecular beam epitaxial method.

In the blue and ultraviolet light emitting devices of the present invention, the substrate is formed of zinc oxide (ZnO) of the same kind as the zinc oxide (ZnO) light emitting device, and is made of single crystal or polycrystal, or zinc oxide (ZnO) and lattice. Characterized in that the constant is made of any one of the similar GaN / Al ₂ O ₃ , SiC, GaN.

In addition, the substrate is characterized in that consisting of an amorphous material irrelevant to the lattice constant.

In addition, in the blue and ultraviolet light emitting devices of the present invention, the n-type thin film layer includes any one of gallium (Ga), aluminum (Al), and indium (In) as impurities for forming n-type in the compound of zinc oxide (ZnO). One is added, and any one of arsenic (As), antimony (Sb), nitrogen (N), and phosphorus (P) is added to the p-type thin film layer as an impurity for forming p-type to the zinc oxide (ZnO) compound. It is characterized by.

Next, the manufacturing method of the ultraviolet light emitting device according to the present invention, in the manufacturing method of the light emitting device for ultraviolet light emission;

Zinc Oxide (ZnO), SiC, GaN / Al ₂ O ₃ Forming a substrate using any one of; According to the power supply, any one of the impurities of gallium (Ga), aluminum (Al) and indium (In) for n-type is added to Zn _{1 -X- Y} Mg _X Be _Y O to supply electrons (-) to the active layer. Forming an n-type thin film layer on the substrate to a thickness of 500 nm to 1000 nm; Zn _{1 - X} Mg _X O, forming an active layer of quantum barrier and quantum well structure on the n-type thin film layer to emit light through the combination of electron (-) and hole (+) supplied from the n-type thin film layer and p-type thin film layer, The quantum barrier material of any one of Zn _{1 - Y} Be _Y O and Zn _{1 -XY} Mg _X Be _Y O and the quantum well material of any one of Zn _{1 - Z} Cd _Z O, ZnSeO and ZnO periodically overlap each other Forming a well layer; Impurities of arsenic (As), antimony (Sb), nitrogen (N) and phosphorus (P) for p-type in Zn _{1 -X- Y} Mg _X Be _Y O to supply holes (+) to the active layer according to the power supply Adding any one to form a p-type thin film layer on a variety well layer with a thickness of 100 nm to 300 nm; And forming an n-type electrode and a p-type electrode in the n-type thin film layer and the p-type thin film layer. Each value of x, y, and z is all greater than or equal to 0 and less than or equal to 1.

The light emitting device of the present invention and a method of manufacturing the same using an n-type thin film layer and a p-type thin film layer using a zinc oxide (ZnO) -based material as a next-generation light emitting device instead of a gallium nitride (GaN) -based material constituting a blue light emitting device among LEDs In addition, impurities of gallium (Ga) and arsenic (As) are added to the n-type thin film layer and the p-type thin film layer, and beryllium (Be) and magnesium (Mg) are added to the various well layers having a quantum barrier structure and a quantum well structure. By constructing a structure in which the zinc oxide (ZnO) -based material is periodically overlapped and laminated, the blue light emitting device can overcome the limitations of the light-emitting device due to the gallium nitride (GaN) -based material used in the conventional blue light emitting device, thereby achieving excellent blue light emission. There is such an excellent effect.

In addition, by expanding the use area of the zinc oxide (ZnO) -based material applied to the blue light emitting device of the present invention to ultraviolet light emission, there is also an effect such as to improve the quality of life in a variety of applications.

Hereinafter, the ultraviolet light emitting device of the present invention and a method of manufacturing the same will be described in detail with reference to the drawings.

1 is a schematic view showing a zinc oxide (ZnO) -based light emitting device of the present invention, Figure 2 is an enlarged view of a multi-well well layer of the ultraviolet light active layer of the light emitting device shown in FIG. In addition, Figure 3 shows another embodiment of the UV-based diversified well layer shown in Figure 2, Figure 4 is a state diagram showing the energy band comparison of the UV-based diversified well layer.

First, before describing the light emitting device of the present invention and the manufacturing method thereof in detail, first, the light emitting device of the present invention will be described in detail.

Accordingly, in the light emitting device of the present invention, the ultraviolet light emitting device includes: a substrate 10, similar to the configuration of the blue light emitting device shown in FIG. 1; An n-type thin film layer 20 for supplying electrons (−) to the active layer according to a power supply; A p-type thin film layer 40 for supplying holes (+) to the active layer according to a power supply; Between the n-type thin film layer 20 and the p-type thin film layer 40 forms an active layer of quantum barrier (32a) and quantum well (34a) structure to emit light through the combination of electron (-) and hole (+) Diverse well layer 30a; N-type electrodes 22 and p-type electrodes formed on the n-type thin film layer 20 and the p-type thin film layer 40 so that external power is supplied to the n-type thin film layer 20 and the p-type thin film layer 40, respectively. 42) and the material of the quantum barrier 32a as shown in FIG. 2 when forming the multi-well layer 30a, which is an active layer structure for forming ultraviolet rays of the zinc oxide (ZnO) -based light emitting device. Using Zn _{1 - Y} Be _Y O or a compound of Zn _{1 -X- Y} Mg _X Be _Y O, and the material of the quantum well (34a) using a compound of ZnO and the material of the quantum barrier (32a) The material of the well 34a has a structure in which the materials are periodically stacked on one another.

Here, in the case of the substrate 10 applied to the zinc oxide (ZnO) -based light emitting device, among the GaN / Al ₂ O ₃ , SiC, GaN, and amorphous materials having a lattice constant similar to that of zinc oxide (ZnO) and zinc oxide (ZnO), Either one can be used and it consists of the structure of single crystal and polycrystal.

In addition, in the case of the substrate 10, an amorphous material irrelevant to the lattice constant may be used, which also has a structure of single crystal and polycrystal.

In the case of the n-type thin film layer 20 and the p-type thin film layer 40 of the zinc oxide (ZnO) -based ultraviolet light emitting device of the present invention, electrons (-) are applied to the various well layer 30 which is an active layer according to power supply. As an electron supply layer for supplying, thin film growth is performed on the substrate 10 by an epitaxial method. In this case, zinc oxide (ZnO) is mainly used as the compound for forming the n-type thin film layer 20 and the p-type thin film layer 40. Impurities for smoothly forming electrons (-) and holes (+) from the n-type thin film layer 20 and the p-type thin film layer 40 of the ultraviolet light emitting device, that is, magnesium (Mg) or beryllium (Be) is the active layer The addition amount is adjusted according to the structure of the diversified well layer 30a.

In addition, in the case of the n-type thin film layer 20, in addition to the beryllium (Be) or magnesium (Mg) described above, the n-type thin film layer 20 has gallium (Ga) as an impurity in a compound of zinc oxide (ZnO) to form an n-type. , Aluminum (Al), or indium (In) is added and used, and the p-type thin film layer 40 includes arsenic (As) and antimony (Sb) as impurities in a compound of zinc oxide (ZnO) to form a p-type. ), Nitrogen (N), phosphorus (P) may be used by adding.

In the zinc oxide (ZnO) -based UV light emitting device of the present invention, the quantum barrier layer 32a and the quantum well 34a are disposed between the n-type thin film layer 20 and the p-type thin film layer 40. accomplished a structure wherein the electrons (-) as an active layer a light-emitting made through a combination of the holes (+), where the various character the quantum barrier (32a) to a compound of which the well layer (30a) materials are Zn _{1 - Y} Be _Y O or a compound of Zn _{1 -X- Y} Mg _X Be _Y O, the material of the quantum well 34a is a material of the quantum barrier (32a) and the quantum well (34a) using a compound of ZnO These materials form a structure in which the materials are periodically overlapped and stacked.

In addition, as another embodiment of the multi-layer well layer 30a which is an active layer structure for forming ultraviolet rays of the zinc oxide (ZnO) -based light emitting device, as shown in FIG. 3, the material of the quantum barrier 32a is Zn _{1. - Y Y} O Be, Zn _{1 -X- Y} Mg _{Y X} Be O, Zn _{1 - X} Mg _X O either using the compounds, and the quantum well (34a) of the material is equal to the quantum barrier (32a) substance As a material, a structure in which the material of the quantum barrier 32a and the material of the quantum well 34a are periodically overlapped with each other may be formed.

At this time, in the active layer structure as described above, Zn _{1 - Y} Be _Y O or Zn _1-XY Mg _X Be _Y O compound shown in (a) of the compound of the quantum barrier (32a) and ZnO compound Zn _{1 - Y} Be _Y O, Zn shown in (b) of FIG. Quantum barrier material 32a consisting of any one compound of _{1 -X- Y} Mg _X Be _Y O, Zn _1-X Mg _X O and Zn _{1 - Y} Be _Y O, Zn _{1 -XY} Mg _X Be _Y O, Energy band of Zn (Mg) BeO / Zn (Mg) BeO, which is a multi-well layer 30a in which quantum wells 34a made of a compound of any one of Zn _{1 - X} Mg _X O are periodically stacked on one another. The quantum barrier 32a of the quantum well 34a is increased to increase the quantum effect of electrons (+) or holes (+), thereby improving luminous efficiency, and the X and Y values of the quantum well 34a are Compared to the X and Y values of the quantum barrier 32a A comparison of the energy bands with a low value is shown in FIG. 4.

The n-type thin film layer 20, the multi-well thin film layer 30a, and the p-type thin film layer 40 are epitaxially grown on the substrate 10. And an etching operation for forming the n-type electrode 22 and the p-type electrode 42 so as to be supplied to the p-type thin film layer 40, that is, an etching operation for exposing the n-type thin film layer 20 to the outside. The n-type electrode 22 and the p-type electrode 42 are formed on the n-type thin film layer 20 and the p-type thin film layer 40 which are exposed to the outside by the etching operation as described above. The light emitting element is completed.

In this case, in the case of the n-type electrode 22 and the p-type electrode 42 formed on the etched n-type thin film layer 20 and the p-type thin film layer 40, gold (Au), silver (Ag), and aluminum (Al) may be used. ), Copper (Cu), nickel (Ni) and titanium (Ti).

In addition, in the blue and ultraviolet light emitting devices of the present invention configured as described above, the material of the quantum barrier (32, 32a) and the material of the quantum well (34, 34a) is periodically stacked and stacked, the multi-well layer 30 30a) The structure consists of 5 to 10 cycles.

In the zinc oxide (ZnO) -based light emitting device of the present invention configured as described above, the PL shown in FIG. 5 is recombined when electrons (-) and holes (+) obtained in the configuration of the zinc oxide (ZnO) -based material are actually combined. You get a curve graph.

At this time, when looking at the PL curve graph, it can be seen that the light emitting device configuration of the present invention is formed by light emission by recombination of electrons (-) and holes (+) in the 380 nm region, which is higher than the blue wavelength in the 400 to 450 nm region. With shorter wavelengths, Nakamura's research team at Nichia, Japan, in 1990, has the characteristic effect of achieving higher luminance than blue LEDs with shorter wavelengths of less than 450 nm using gallium nitride (GaN).

In addition, when the device characteristics of the zinc oxide (ZnO) -based light emitting device of the present invention is characterized by the current and voltage obtained in the light emitting device manufactured using the zinc oxide (ZnO) -based material, a small voltage of 2.5V to 3V This can be seen through FIG.

7 is a schematic view showing the ultraviolet light emitting device of the present invention manufactured by the epitaxial method, firstly zinc oxide (ZnO), SiC, GaN / Al ₂ O ₃ After forming the substrate 10 using any one of them, the n-type thin film layer 20 is formed on top of the substrate 10 by using an epitaxial method applied to the present invention, which is electron (-) according to the power supply N-type on the substrate 10 by adding any one of impurities of gallium (Ga), aluminum (Al) and indium (In) for n-type to Zn _{1 -X- Y} Mg _X Be _Y O to supply the active layer The thin film layer 20 is formed to a thickness of 500 nm to 1000 nm.

In addition, electrons (-) supplied from the n-type thin film layer 20 and the p-type thin film layer 40 form an active layer having a quantum barrier 32a and a quantum well 34a structure on the n-type thin film layer 20 having the thickness. Quantum barrier 32a made of any one of compounds of Zn _{1 - X} Mg _X O, Zn _{1 - Y} Be _Y O and Zn _{1 -XY} Mg _X Be _Y O to allow light to be emitted through the combination of holes (+) A material and a quantum well 34a material made of any one of a compound of Zn _{1 - Z} Cd _Z O, ZnSeO, and ZnO form a multi-well layer 30a stacked on each other for 5 to 10 cycles.

In addition, Zn _1-XY Mg _X Be _Y so as to supply holes (+) to the active layer in accordance with the power supply on the quantum barrier layer 32a and the quantum well 34a which are periodically overlapped as described above. 100 nm to 100 nm of p-type thin film layer 40 on the various well layer 30a by adding any of impurities of arsenic (As), antimony (Sb), nitrogen (N), and phosphorus (P) for p-type to O; After forming a thickness of 300nm, the etching operation for forming the n-type electrode 22 and the p-type electrode 42 is performed, that is, the etching operation for exposing the n-type thin film layer 20 to the outside is performed as described above. By forming the n-type electrode 22 and the p-type electrode 42 in the n-type thin film layer 20 and the p-type thin film layer 40 exposed to the outside, the manufacturing of the ultraviolet light emitting device of the present invention is completed, It has a configuration as shown in FIG.

As described above, the above-described embodiments are described with reference to the most preferred examples of the present invention, but are not limited to the above embodiments, and it will be apparent to those skilled in the art that various modifications can be made without departing from the technical spirit of the present invention. .

1 is a schematic view showing a zinc oxide (ZnO) -based light emitting device of the present invention.

FIG. 2 is an enlarged view of a diversified well layer which is an active layer of an ultraviolet ray-based light emitting device shown in FIG. 1.

3 is another embodiment of the UV-based diversified well layer shown in FIG.

Figure 4 is a state diagram showing a comparison of the energy band of the ultraviolet-based diversified well layer.

5 is a PL curve graph showing a light emission wavelength region of a zinc oxide (ZnO) -based light emitting device of the present invention.

6 is a graph showing the driving voltage of the zinc oxide (ZnO) -based light emitting device of the present invention.

7 is a schematic view showing an ultraviolet light emitting device of the present invention manufactured by the epitaxial method.

Explanation of symbols on the main parts of the drawings

1O, Board

20. n-type thin film layer

22.n-type electrode

30, 30a. Diverse well layer

32, 32a. Quantum barrier

34, 34a. Quantum well

40. p-type thin film layer

42.p-type electrode

Claims (9)

In a zinc oxide (ZnO) ultraviolet light emitting device; A substrate; An n-type thin film layer for supplying electrons (-) to the active layer in accordance with a power supply; A p-type thin film layer for supplying holes (+) to the active layer according to a power supply; A multi-well layer forming an active layer between the n-type thin film layer and the p-type thin film layer and an active layer having a quantum well structure and emitting light through a combination of electrons (+) and holes (+); A n-type electrode and a p-type electrode which are respectively formed in the n-type thin film layer and the p-type thin film layer to allow external power to be supplied to the n-type thin film layer and the p-type thin film layer; The material of the quantum barrier layer is formed of Zn _{1 - Y} Be _Y O or Zn _{1 -X- Y} Mg _X Be _Y O during the formation of the multi-well layer, which is an active layer structure for forming ultraviolet rays of the zinc oxide (ZnO) -based light emitting device. Using a compound, the material of the quantum well is a UV light emitting device comprising a structure in which the material of the quantum barrier and the material of the quantum well are periodically overlapped with each other using a compound of ZnO. {x, y has the value 0≤x, y≤1} The method of claim 1, wherein the material of the quantum barrier is Zn _{1 - Y} Be _Y O, Zn _{1- XY} Mg _{X when forming a multi} -well layer that is an active layer structure for forming ultraviolet light of the zinc oxide (ZnO) -based light emitting device By using a compound of any one of Be _Y O and Zn _{1 - X} Mg _X O, the material of the quantum well is the same material as the material of both barriers and the material of the quantum barrier and the material of the quantum wells Ultraviolet light emitting device, characterized in that consisting of a laminated structure. {x, y has the value 0≤x, y≤1} The ultraviolet light emitting device according to claim 1 or 2, wherein the material of the quantum barrier and the material of the quantum well are periodically stacked and stacked to have 5 to 10 cycles. The ultraviolet light emitting device according to claim 1 or 2, wherein the compound of the quantum barrier material and the quantum well material is grown and formed by a molecular beam epitaxial method. According to claim 1, wherein the substrate is formed of a zinc oxide (ZnO) of the same kind as the zinc oxide (ZnO) light emitting device, GaN / Al ₂ made of a single crystal or polycrystalline, or a lattice constant similar to zinc oxide (ZnO) An ultraviolet light emitting device comprising any one of O ₃ , SiC, and GaN. 6. The ultraviolet light emitting device of claim 5, wherein the substrate is made of an amorphous material irrelevant to a lattice constant. According to claim 1, wherein the n-type thin film layer is any one of gallium (Ga), aluminum (Al), indium (In) is added as an impurity for forming the n-type to the compound of zinc oxide (ZnO), the p-type An ultraviolet light emitting device comprising any one of arsenic (As), antimony (Sb), nitrogen (N), and phosphorus (P) as an impurity for forming p-type in a compound of zinc oxide (ZnO). The method of claim 1, wherein in the ultraviolet-based series of the zinc oxide (ZnO) -based light emitting device, one of magnesium (Mg) and beryllium (Be) is added to the zinc oxide (ZnO) to the n-type thin film layer and the p-type thin film layer, respectively. Ultraviolet light emitting device, characterized in that the amount of magnesium (Mg) or beryllium (Be) is controlled according to the structure of the multi-layer well layer that is the active layer. In the method of manufacturing a light emitting device for ultraviolet light emission; Zinc Oxide (ZnO), SiC, GaN / Al ₂ O ₃ Forming a substrate using any one of; According to the power supply, any one of the impurities of gallium (Ga), aluminum (Al) and indium (In) for n-type is added to Zn _{1 -X- Y} Mg _X Be _Y O to supply electrons (-) to the active layer. Forming an n-type thin film layer on the substrate to a thickness of 500 nm to 1000 nm; Zn _{1 - X} Mg _X O to form an active layer of quantum barrier and quantum well structure on the n-type thin film layer to emit light through the combination of electron (-) and hole (+) supplied from the n-type thin film layer and p-type thin film layer Quantum barrier material of any one of Zn _{1 - Y} Be _Y O, Zn _{1 -X- Y} Mg _X Be _Y O and the quantum well material of any one of Zn _{1 - Z} Cd _Z O, ZnSeO, ZnO Forming overlapping well layers by overlapping; Impurities of arsenic (As), antimony (Sb), nitrogen (N) and phosphorus (P) for p-type in Zn _{1 -X- Y} Mg _X Be _Y O to supply holes (+) to the active layer according to the power supply Adding any one to form a p-type thin film layer on a variety well layer with a thickness of 100 nm to 300 nm; Forming an n-type electrode and a p-type electrode in the n-type thin film layer and the p-type thin film layer. {x, y, z has the value 0≤x, y, z≤1}

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