CN111834390A - Full-color three-pole light emitting diode display device and manufacturing method thereof - Google Patents
Full-color three-pole light emitting diode display device and manufacturing method thereof Download PDFInfo
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- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
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- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
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Abstract
The invention relates to a full-color three-electrode light-emitting tube display device and a manufacturing method thereof. And applying a low-power variable input signal between the first contact electrode and second contact electrodes in the R unit, the G unit and the B unit respectively, and applying a forward bias voltage between the first contact electrode and third contact electrodes in the R unit, the G unit and the B unit respectively to enable the R unit, the G unit and the B unit to emit light. The invention can realize that the light-emitting chip is driven by a low-power input signal to emit light to excite the color conversion layer, thereby realizing full-color display.
Description
Technical Field
The invention relates to the technical field of semiconductor display luminescent device design, in particular to a full-color triode display device and a manufacturing method thereof.
Background
Light Emitting Diodes (LEDs) are increasingly used in displays because of their advantages of long lifetime, small size, low power consumption, high brightness, fast response, etc. The micro light emitting diode (mu LED) derived from the micro light emitting diode (mu LED) refers to the micro LED array with micron-scale spacing formed after the traditional LED is miniaturized so as to achieve the ultrahigh density pixel resolution, can be widely applied to the fields of flexible and transparent displays, AR, VR and the like, and is one of the most potential next generation display devices. Compared with OLED and LCD display, the mu LED display color is easier to debug accurately, has long light-emitting service life and high brightness, is the only display device which can integrate driving, light-emitting and signal transmission into a whole, has high light-emitting efficiency and low power consumption, and realizes a super-large scale integrated light-emitting unit.
Despite the numerous advantages, the issue of full color for LED or μ LED displays is one of the key technologies that must be addressed for their application on displays. Full-color solutions fall into two broad categories, one is direct light emission from RGB tricolor chips, and the other is the matching of a monochrome chip with a color conversion layer. Although the former technology is relatively mature at present, it is difficult to grow an RGB chip with different wavelengths on the same substrate, and the three colors are driven separately, the driving circuit is complex, and the cost is high, so the currently regarded full-color technology belongs to the latter technology. The technology is that a tricolor fluorescence conversion layer is arranged on a single short-wavelength mu LED array, so that light emitted by a chip is converted into RGB (red, green and blue) tricolor, and full-color display is realized. At present, the method for realizing the mu LED full color display mainly comprises a blue light mu LED + red-green quantum dot color conversion method, a nano-column RGB pixel light source, an optical prism synthesis method and a Chromover wavelength conversion technology. The color conversion of blue light mu LED + red and green quantum dots is the mainstream technical route for realizing full-color mu LED display at present. However, when the LED is in a vertical structure or a flip-chip structure, the LED is driven by two electrodes, i.e. only two contact electrodes are applied to two ends of the LED. Although the driving method is relatively universal, the low-power signal output by the control chip often cannot directly drive the LED, and power amplification is needed in the middle. These power amplification circuits will significantly increase the design complexity of the driving circuit. Especially for μ LEDs, complex driving circuits are not conducive to the construction of highly integrated systems.
Disclosure of Invention
In view of the above, the present invention is directed to a full-color triode display device and a manufacturing method thereof, which realize full-color display by driving a light emitting chip to emit light by a low-power input signal to excite a color conversion layer.
The invention is realized by adopting the following scheme: a full-color three-electrode light emitting diode display device comprises a buffer layer, a first semiconductor layer arranged on the buffer layer, a first contact electrode arranged on the first semiconductor layer, an R unit used for displaying red light, a G unit used for displaying green light and a B unit used for displaying blue light;
the R unit, the G unit and the B unit sequentially comprise a second semiconductor layer, a third semiconductor layer, a blue light emitting layer, a fourth semiconductor layer and a third contact electrode from bottom to top; the R unit, the G unit and the B unit respectively comprise a second contact electrode arranged on the second semiconductor layer; the R unit further comprises a red light color conversion layer and a distributed Bragg reflection layer DBR1 which are sequentially arranged on a third contact electrode in the unit, the G unit further comprises a green light color conversion layer and a distributed Bragg reflection layer DBR2 which are sequentially arranged on the third contact electrode in the unit, and the B unit further comprises a distributed Bragg reflection layer DBR3 which is arranged on the third contact electrode in the unit;
wherein a variable input signal is applied between the first contact electrode and the second contact electrode of the R cell, the G cell and the B cell, respectively, and a forward bias voltage is applied between the first contact electrode and the third contact electrode of the R cell, the G cell and the B cell, respectively, so that the R cell, the G cell and the B cell emit light.
The first semiconductor layer, the second semiconductor layer, the third semiconductor layer, the first contact electrode, the second contact electrode (SCE1) in the R unit, the second contact electrode (SCE2) in the G unit and the second contact electrode (SCE3) in the B unit form a triode structure; the third semiconductor layer, the blue light emitting layer, the fourth semiconductor layer and the third contact electrode form a light emitting chip structure; the red color conversion layer and the distributed bragg reflector layer (DBR1) in the R cell, the green color conversion layer and the distributed bragg reflector layer (DBR2) in the G cell, and the distributed bragg reflector layer (DBR3) in the B cell constitute a color conversion structure.
The triode structure amplifies the power of an input signal, so that the light-emitting chip is driven to emit light by using a low-power input signal, a light conversion layer is excited, and full-color display is realized; meanwhile, the triode can also effectively reduce the design complexity of a driving circuit of the light-emitting device and improve the integration level of the display device. Wherein the third semiconductor layer is a collector of the triode structure and is also a cathode or an anode of the light emitting chip.
Furthermore, the first semiconductor layer is an N-type semiconductor layer, the second semiconductor layer is a P-type semiconductor layer, the third semiconductor layer is an N-type semiconductor layer, and the fourth semiconductor layer is a P-type semiconductor layer; or the first semiconductor layer is a P-type semiconductor layer, the second semiconductor layer is an N-type semiconductor layer, the third semiconductor layer is a P-type semiconductor layer, and the fourth semiconductor layer is an N-type semiconductor layer.
Further, when the first semiconductor layer is an N-type semiconductor layer, the second semiconductor layer is a P-type semiconductor layer, the third semiconductor layer is an N-type semiconductor layer, and the fourth semiconductor layer is a P-type semiconductor layer, the voltage signal applied between the first contact electrode and the second contact electrodes in the R cell, the G cell, and the B cell is positive polarity, that is, the potential of the second contact electrode SCE1 in the R cell, the second contact electrode SCE2 in the G cell, and the second contact electrode SCE3 in the B cell is higher than the potential of the first contact electrode, and the voltage signal applied between the first contact electrode and the third contact electrodes in the R cell, the G cell, and the B cell is positive polarity, that is, the potential of the third contact electrode TCE1 in the R cell, the third contact electrode TCE2 in the G cell, and the third contact electrode TCE3 in the B cell is higher than the potential of the first contact electrode.
Further, when the first semiconductor layer is a P-type semiconductor layer, the second semiconductor layer is an N-type semiconductor layer, the third semiconductor layer is a P-type semiconductor layer, and the fourth semiconductor layer is an N-type semiconductor layer, the voltage signal applied between the first contact electrode and the second contact electrodes in the R cell, the G cell, and the B cell is negative polarity, that is, the potential of the second contact electrode SCE1 in the R cell, the second contact electrode SCE2 in the G cell, and the second contact electrode SCE3 in the B cell is lower than the potential of the first contact electrode, and the voltage signal applied between the first contact electrode and the third contact electrodes in the R cell, the G cell, and the B cell is negative polarity, that is, the potential of the third contact electrode TCE1 in the R cell, the third contact electrode TCE2 in the G cell, and the third contact electrode TCE3 in the B cell is lower than the potential of the first contact electrode.
Further, the first semiconductor layer is a semiconductor layer with a heavily doped concentration, and the doping concentration of the first semiconductor layer is 1 to 5 orders of magnitude higher than that of the second semiconductor layer.
Further, the magnitude of the voltage applied between the first contact electrode and the second contact electrode of the R cell, the G cell, and the B cell is smaller than the magnitude of the voltage applied between the first contact electrode and the third contact electrode of the R cell, the G cell, and the B cell.
Further, the distributed Bragg reflection layers disposed in the R unit, the G unit and the B unit are each formed by stacking two kinds of films having high refractive index and low refractive index, and the thickness of each layer of film is made of
Determining, wherein n is the refractive index of the film, d is the thickness of the film, theta is the light incidence angle, lambda is the central wavelength, q is a constant, q is not less than 0, and when q is a positive odd number, the reflectivity has an extreme value; and respectively setting the number of the film stacking layers of the three distributed Bragg reflection layers as x, y and z, wherein the three layers are N or N +0.5, and N is a positive integer.
Further, the distributed bragg reflector DBR1 in the R unit is used for totally reflecting blue light and highly transmitting red light, the distributed bragg reflector DBR2 in the G unit is used for totally reflecting blue light and highly transmitting green light, and the distributed bragg reflector DBR3 in the B unit is used for reflecting part of the blue light and adjusting the light-emitting intensity, so that the light-emitting proportion of RGB three-color light is adjusted and controlled, and full-color display is better achieved.
Furthermore, the buffer layer, the first semiconductor layer, the second semiconductor layer, the third semiconductor layer, the blue light emitting layer and the fourth semiconductor layer are of a single-layer semiconductor structure with the same doping concentration or of a multi-layer semiconductor structure with gradually-changed or gradually-changed doping concentration.
The invention also provides a manufacturing method of the full-color triode display device, which comprises the following steps:
sequentially growing a buffer layer, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a blue light emitting layer and a fourth semiconductor layer on a substrate;
etching the layer until part of the second semiconductor layer is exposed to form an array module, and dividing the array module into an R unit, a G unit and a B unit;
continuously etching the exposed second semiconductor layer until the first semiconductor layer is exposed;
growing a first contact electrode on the exposed first semiconductor layer (rightmost side); growing a second contact electrode on the second semiconductor layer exposed in the R unit, the G unit and the B unit respectively;
respectively growing a third contact electrode on the surface of the fourth semiconductor layer in the R unit, the G unit and the B unit;
preparing a red color conversion layer and a green color conversion layer on the surfaces of the third contact electrodes of the R cell and the G cell (by deposition), wherein the lengths of the red color conversion layer and the green color conversion layer are respectively smaller than the lengths of the third contact electrodes TCE1 and TCE 2;
and respectively depositing a distributed Bragg reflection layer on the surfaces of the red light color conversion layer, the green light color conversion layer and the third contact electrode of the B unit of the R unit and the G unit. The length of the distributed bragg reflector DBR3 in the B cell is smaller than that of the third contact electrode TCE3, and the wavelength of outgoing light, the wavelength of reflected light, and the ratio of transmission and reflection are controlled by adjusting the thickness of the high and low refractive index films of the distributed bragg reflector and the number of alternately stacked film layers. The DBR1 is used for totally reflecting blue light, high transmission ruddiness, and the DBR2 is used for totally reflecting blue light, high transmission green glow, and the DBR3 is used for reflecting partial blue light, adjusts the light intensity to the light-emitting proportion of regulation and control RGB three-color light, better realization full-color display.
Preferably, the thickness of the second semiconductor layer is 0.5nm to 2 μm. The host material of the second semiconductor layer may be, but not limited to, GaAs, GaP, GaN, ZnSe, SiC, Si, ZnSe, graphene, black phosphorus, MoS2The CNT may be, but not limited to, an organic semiconductor material such as CuPc or Alq 3.
Preferably, the thickness of the first semiconductor layer is 0.5 μm to 5 μm, the thickness of the third semiconductor layer is 0.5 μm to 5 μm, and the thickness of the fourth semiconductor layer is 10nm to 2 μm. The host material of the first semiconductor layer, the third semiconductor layer, and the fourth semiconductor layer may be, but not limited to, an inorganic semiconductor material such as GaAs, GaP, GaN, ZnSe, SiC, Si, and ZnSe, or an organic semiconductor material such as CuPc and Alq 3.
Wherein the first contact electrode forms an ohmic contact with the first semiconductor layer; the second contact electrode (SCE1 in R cell, SCE2 in G cell, and SCE3 in B cell) and the second semiconductor layer form an ohmic contact; the third contact electrodes (TCE1 in the R cell, TCE2 in the G cell, and TCE3 in the B cell) form ohmic contacts with the fourth semiconductor layer, respectively, and the third contact electrodes are transparent electrodes.
Preferably, the blue light emitting layer includes a multiple quantum well active layer and a hole blocking layer or an electron blocking layer for improving carrier recombination efficiency; but not limited to, an organic thin film having a light emitting function and a functional layer for improving carrier recombination efficiency; but not limited to, a nano material film with a light emitting function and a functional layer for improving the carrier recombination efficiency.
Preferably, the red light in the R unit is obtained by exciting a red light conversion layer by the blue light emitting layer; the red light conversion layer can be a red quantum dot material or a phosphor or a combination of both and other polymers. The green light in the G unit is obtained by exciting a green light conversion layer by the blue light emitting layer; the green light conversion layer may be a green quantum dot material or a phosphor or a combination of both with other polymers.
Preferably, the substrate may be, but not limited to, sapphire, GaAs, GaP, GaN, ZnSe, SiC, Si, ZnSe; the substrate may remain on the device or may be removed during the fabrication of the wavelength converted triode light emitting device.
Preferably, the buffer layer, the first semiconductor layer, the second semiconductor layer, the third semiconductor layer, the light emitting layer and the fourth semiconductor layer may be formed by, but not limited to, epitaxy, deposition, plating, assembly, transfer, and attachment.
Compared with the prior art, the invention has the following beneficial effects:
(1) compared with the common color LED, the full-color triode luminescent tube display device provided by the invention integrates the peripheral amplifying drive circuit in the luminescent chip, and one more drive electrode is used as a control end to amplify the power of the input signal, so that the luminescent chip is driven by the low-power input signal, the design complexity of the drive circuit of the LED display device, particularly the mu LED display device, is effectively reduced, and the integration level of the LED display device is improved.
(2) The invention can use blue light emitting chip to excite red and green light conversion layer in R unit and G unit to emit red/green light, to realize full color display. Meanwhile, the DBR layer on the light conversion layer is utilized to effectively totally reflect the light excited by the light emitting chip and the light generated by the high-transmission light conversion layer, so that the conversion efficiency of the device is improved.
(3) The manufacturing method provided by the invention is simple and convenient, has low cost, and can quickly and effectively prepare R, G, B color-developing modules on the same substrate, thereby realizing full-color display; and the color rendering property, the color purity and the conversion efficiency are high, thereby being beneficial to promoting the industrialization efficiency and the market competitiveness of the mu LED display.
Drawings
Fig. 1 is a schematic cross-sectional view of a full-color triode display device according to an embodiment of the invention.
Fig. 2 is a perspective view of a full-color triode display device according to an embodiment of the invention.
Fig. 3 is a flowchart of a manufacturing process of a full-color triode display device according to an embodiment of the invention.
Fig. 4 is a schematic diagram of a manufacturing process of a full-color triode display device according to an embodiment of the invention.
Fig. 5 is a schematic diagram of a driving method of a full-color triode display device according to an embodiment of the invention.
Fig. 6 is a driving equivalent circuit of a full-color triode display device according to an embodiment of the present invention.
In the drawing, 1 is a sapphire substrate, 2 is a buffer layer, 6 is an R cell, 7 is a G cell, 8 is a B cell, 301 is a first semiconductor layer, 302 is a second semiconductor layer, 303 is a third semiconductor layer, 304 is a light emitting layer, 305 is a fourth semiconductor layer, 401 is a first contact electrode, 501, 502 and 503 are second contact electrodes SCE1, SCE2 and SCE3, 601, 602 and 603 are third contact electrodes TCE1, TCE2 and TCE3, 701 is a red light conversion layer, 702 is a green light conversion layer, 801, 802 and 803 are DBR1, DBR2 and DBR3, respectively.
Detailed Description
The invention is further explained below with reference to the drawings and the embodiments.
It should be noted that the following detailed description is exemplary and is intended to provide further explanation of the disclosure. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments according to the present application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
As shown in fig. 1 and 2, the present embodiment provides a full-color triode display device, including a buffer layer 2, a first semiconductor layer 301 disposed on the buffer layer, and a first contact electrode 401 disposed on the first semiconductor layer, an R cell 6 for displaying red light, a G cell 7 for displaying green light, and a B cell 8 for displaying blue light;
the R unit, the G unit and the B unit sequentially comprise a second semiconductor layer 302, a third semiconductor layer 303, a blue light emitting layer 304, a fourth semiconductor layer 305 and a third contact electrode 601 from bottom to top; wherein each of the R cell, the G cell and the B cell further includes a second contact electrode 501/502/503 disposed on the second semiconductor layer; wherein, the R unit also comprises a red color conversion layer 701 and a distributed Bragg reflection layer DBR1(801) which are arranged on the third contact electrode in the unit in sequence, the G unit also comprises a green color conversion layer 802 and a distributed Bragg reflection layer DBR2(802) which are arranged on the third contact electrode in the unit in sequence, and the B unit also comprises a distributed Bragg reflection layer DBR3(803) which is arranged on the third contact electrode in the unit;
wherein a variable input signal is applied between the first contact electrode and the second contact electrode of the R cell, the G cell and the B cell, respectively, and a forward bias voltage is applied between the first contact electrode and the third contact electrode of the R cell, the G cell and the B cell, respectively, so that the R cell, the G cell and the B cell emit light.
The first semiconductor layer, the second semiconductor layer, the third semiconductor layer, the first contact electrode, the second contact electrode (SCE1) in the R unit, the second contact electrode (SCE2) in the G unit and the second contact electrode (SCE3) in the B unit form a triode structure; the third semiconductor layer, the blue light emitting layer, the fourth semiconductor layer and the third contact electrode form a light emitting chip structure; the red color conversion layer and the distributed bragg reflector layer (DBR1) in the R cell, the green color conversion layer and the distributed bragg reflector layer (DBR2) in the G cell, and the distributed bragg reflector layer (DBR3) in the B cell constitute a color conversion structure.
The triode structure amplifies the power of an input signal, so that the light-emitting chip is driven to emit light by using a low-power input signal, a light conversion layer is excited, and full-color display is realized; meanwhile, the triode can also effectively reduce the design complexity of a driving circuit of the light-emitting device and improve the integration level of the display device. Wherein the third semiconductor layer is a collector of the triode structure and is also a cathode or an anode of the light emitting chip.
In this embodiment, the first semiconductor layer is an N-type semiconductor layer, the second semiconductor layer is a P-type semiconductor layer, the third semiconductor layer is an N-type semiconductor layer, and the fourth semiconductor layer is a P-type semiconductor layer; or the first semiconductor layer is a P-type semiconductor layer, the second semiconductor layer is an N-type semiconductor layer, the third semiconductor layer is a P-type semiconductor layer, and the fourth semiconductor layer is an N-type semiconductor layer.
In the present embodiment, when the first semiconductor layer is an N-type semiconductor layer, the second semiconductor layer is a P-type semiconductor layer, the third semiconductor layer is an N-type semiconductor layer, and the fourth semiconductor layer is a P-type semiconductor layer, the voltage signal applied between the first contact electrode and the second contact electrodes in the R cell, the G cell, and the B cell is positive polarity, that is, the potential of the second contact electrode SCE1 in the R cell, the second contact electrode SCE2 in the G cell, and the second contact electrode SCE3 in the B cell is higher than the potential of the first contact electrode, and the voltage signal applied between the first contact electrode and the third contact electrodes in the R cell, the G cell, and the B cell is positive polarity, that is, the potential of the third contact electrode TCE1 in the R cell, the third contact electrode TCE2 in the G cell, and the third contact electrode TCE3 in the B cell is higher than the potential of the first contact electrode.
In the present embodiment, when the first semiconductor layer is a P-type semiconductor layer, the second semiconductor layer is an N-type semiconductor layer, the third semiconductor layer is a P-type semiconductor layer, and the fourth semiconductor layer is an N-type semiconductor layer, the voltage signal applied between the first contact electrode and the second contact electrodes in the R cell, the G cell, and the B cell is negative polarity, that is, the potential of the second contact electrode SCE1 in the R cell, the second contact electrode SCE2 in the G cell, and the second contact electrode SCE3 in the B cell is lower than the potential of the first contact electrode, and the voltage signal applied between the first contact electrode and the third contact electrodes in the R cell, the G cell, and the B cell is negative polarity, that is, the potential of the third contact electrode TCE1 in the R cell, the third contact electrode TCE2 in the G cell, and the third contact electrode TCE3 in the B cell is lower than the potential of the first contact electrode.
In this embodiment, the first semiconductor layer is a heavily doped semiconductor layer, and the doping concentration of the first semiconductor layer is 1 to 5 orders of magnitude higher than that of the second semiconductor layer.
In the present embodiment, the magnitude of the voltage applied between the first contact electrode and the second contact electrode of the R, G, and B cells is smaller than the magnitude of the voltage applied between the first contact electrode and the third contact electrode of the R, G, and B cells.
In the present embodiment, the distributed bragg reflectors provided in the R unit, the G unit, and the B unit are each formed by stacking two kinds of thin films having high and low refractive indices, each layer having a film thickness of
Determining, wherein n is the refractive index of the film, d is the thickness of the film, theta is the light incidence angle, lambda is the central wavelength, q is a constant, q is not less than 0, and when q is a positive odd number, the reflectivity has an extreme value; and respectively setting the number of the film stacking layers of the three distributed Bragg reflection layers as x, y and z, wherein the three layers are N or N +0.5, and N is a positive integer.
In this embodiment, the distributed bragg reflector DBR1 in the R unit is configured to totally reflect blue light and highly transmit red light, the distributed bragg reflector DBR2 in the G unit is configured to totally reflect blue light and highly transmit green light, and the distributed bragg reflector DBR3 in the B unit is configured to reflect a part of blue light and adjust light-emitting intensity, so that the light-emitting ratio of RGB three-color light is adjusted and full-color display is better achieved.
In this embodiment, the buffer layer, the first semiconductor layer, the second semiconductor layer, the third semiconductor layer, the blue light emitting layer, and the fourth semiconductor layer are single-layer semiconductor structures having the same doping concentration, or multi-layer semiconductor structures having graded or graded doping concentrations.
As shown in fig. 3, the present embodiment further provides a method for manufacturing a full-color triode display device, including the following steps:
sequentially growing a buffer layer, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a blue light emitting layer and a fourth semiconductor layer on a substrate;
etching the layer until part of the second semiconductor layer is exposed to form an array module, and dividing the array module into an R unit, a G unit and a B unit;
continuously etching the exposed second semiconductor layer until the first semiconductor layer is exposed;
growing a first contact electrode on the exposed first semiconductor layer (rightmost side); growing a second contact electrode on the second semiconductor layer exposed in the R unit, the G unit and the B unit respectively;
respectively growing a third contact electrode on the surface of the fourth semiconductor layer in the R unit, the G unit and the B unit;
preparing a red color conversion layer and a green color conversion layer on the surfaces of the third contact electrodes of the R cell and the G cell (by deposition), wherein the lengths of the red color conversion layer and the green color conversion layer are respectively smaller than the lengths of the third contact electrodes TCE1 and TCE 2;
and respectively depositing a distributed Bragg reflection layer on the surfaces of the red light color conversion layer, the green light color conversion layer and the third contact electrode of the B unit of the R unit and the G unit. The length of the distributed bragg reflector DBR3 in the B cell is smaller than that of the third contact electrode TCE3, and the wavelength of outgoing light, the wavelength of reflected light, and the ratio of transmission and reflection are controlled by adjusting the thickness of the high and low refractive index films of the distributed bragg reflector and the number of alternately stacked film layers. The DBR1 is used for totally reflecting blue light, high transmission ruddiness, and the DBR2 is used for totally reflecting blue light, high transmission green glow, and the DBR3 is used for reflecting partial blue light, adjusts the light intensity to the light-emitting proportion of regulation and control RGB three-color light, better realization full-color display.
Preferably, the thickness of the second semiconductor layer is 0.5nm to 2 μm. The host material of the second semiconductor layer may be, but not limited to, GaAs, GaP, GaN, ZnSe, SiC, Si, ZnSe, graphene, black phosphorus, MoS2The CNT may be, but not limited to, an organic semiconductor material such as CuPc or Alq 3.
Preferably, the thickness of the first semiconductor layer is 0.5 μm to 5 μm, the thickness of the third semiconductor layer is 0.5 μm to 5 μm, and the thickness of the fourth semiconductor layer is 10nm to 2 μm. The host material of the first semiconductor layer, the third semiconductor layer, and the fourth semiconductor layer may be, but not limited to, an inorganic semiconductor material such as GaAs, GaP, GaN, ZnSe, SiC, Si, and ZnSe, or an organic semiconductor material such as CuPc and Alq 3.
Wherein the first contact electrode forms an ohmic contact with the first semiconductor layer; the second contact electrode (SCE1 in R cell, SCE2 in G cell, and SCE3 in B cell) and the second semiconductor layer form an ohmic contact; the third contact electrodes (TCE1 in the R cell, TCE2 in the G cell, and TCE3 in the B cell) form ohmic contacts with the fourth semiconductor layer, respectively, and the third contact electrodes are transparent electrodes.
Preferably, the blue light emitting layer includes a multiple quantum well active layer and a hole blocking layer or an electron blocking layer for improving carrier recombination efficiency; but not limited to, an organic thin film having a light emitting function and a functional layer for improving carrier recombination efficiency; but not limited to, a nano material film with a light emitting function and a functional layer for improving the carrier recombination efficiency.
Preferably, the red light in the R unit is obtained by exciting a red light conversion layer by the blue light emitting layer; the red light conversion layer can be a red quantum dot material or a phosphor or a combination of both and other polymers. The green light in the G unit is obtained by exciting a green light conversion layer by the blue light emitting layer; the green light conversion layer may be a green quantum dot material or a phosphor or a combination of both with other polymers.
Preferably, the buffer layer, the first semiconductor layer, the second semiconductor layer, the third semiconductor layer, the light emitting layer and the fourth semiconductor layer may be formed by, but not limited to, epitaxy, deposition, plating, assembly, transfer, and attachment.
Preferably, the substrate may be, but not limited to, sapphire, GaAs, GaP, GaN, ZnSe, SiC, Si, ZnSe; the substrate may remain on the device or may be removed during the fabrication of the wavelength converted triode light emitting device.
Next, the present embodiment will be described in more detail with reference to fig. 1 to 5.
Referring to fig. 1, a full-color triode display device includes a substrate 1 (removable), a buffer layer 2 disposed on the surface of the substrate, a triode structure, a light emitting chip structure and a color conversion structure disposed on the buffer layer; the triode structure, the light emitting chip structure and the color conversion structure are arranged from bottom to top along the buffer layer, and sequentially form an R unit 6 for displaying red light, a G unit 7 for displaying green light and a B unit 8 for displaying blue light along the transverse direction of the substrate 1. The triode structure comprises a first semiconductor layer 301, a second semiconductor layer 302, a third semiconductor layer 303, a first contact electrode 401 led out from the first semiconductor layer, a second contact electrode (SCE1)501 led out from the second semiconductor layer R unit 6, a second contact electrode (SCE2)502 led out from the G unit 7 and a second contact electrode (SCE3)503 led out from the B unit 8 from bottom to top; the light emitting chip structure includes, from bottom to top, a third semiconductor layer 303, a blue light emitting layer 304, a fourth semiconductor layer 304, and a third contact electrode (TCE1)601 led out from inside of a fourth semiconductor layer R unit 6, a third contact electrode (TCE2)602 led out from inside of a G unit 7, and a third contact electrode (TCE3)603 led out from inside of a B unit 8, the color conversion structure includes a conversion layer 701 and a distributed bragg reflector (DBR1)801 for displaying red light inside of the R unit 6, a conversion layer 702 and a distributed bragg reflector (2) 802 for displaying green light inside of the G unit 7, and a distributed bragg reflector (DBR3)803 for partially reflecting blue light inside of the B unit 8.
The substrate 1 of this embodiment is a sapphire substrate and is an a-plane, the buffer layer 2 is made of AlN, the first semiconductor layer 301 is an N-GaN layer, the second semiconductor layer 302 is a P-GaN layer, the third semiconductor layer 303 is an N-GaN layer, and the light-emitting layer 304 is an In layer with 3 periodsaGa1-aN quantum well active layer and AlbGa1-bA hole blocking layer or an electron blocking layer of N composition, and the fourth semiconductor layer 305 is P-GaN. The first contact electrode 401 is a gold copper electrode, the second contact electrodes SCE1501, SCE2502 and SCE3503 are all gold copper electrodes, and the transparent third contact electrodes TCE1601, TCE2602 and TCE3603 are all Indium Tin Oxide (ITO). The red light conversion layer 701 uses a red quantum dot film, and the green light conversion layer 702 uses a green quantum dot film. The distributed Bragg reflector DBR1, DBR2, and DBR3 are each TiO2And Al2O3Two kinds of films are alternately stacked.
Specifically, in this embodiment, the first semiconductor layer, the third semiconductor layer are Mg-doped N-GaN, and the second and fourth semiconductorsThe bulk layer is Si-doped P-GaN. Further, in this embodiment, the Mg doping concentration of the first semiconductor layer is 1 × 1021cm-3The doping concentration of Si in the second semiconductor layer is 5 × 1018cm-3The Mg doping concentration of the third semiconductor layer is 1 multiplied by 1019cm-3The fourth semiconductor layer has Si doping concentration of 5 × 1018cm-3。
The preparation method of the device of the embodiment is specifically realized according to the following steps:
s11: providing a sapphire 1 substrate, placing the sapphire substrate 1 in an MOCVD reaction chamber, setting the temperature to be 800-1200 ℃, introducing trimethyl aluminum and ammonia gas, and growing a buffer layer 2, a first semiconductor layer N-GaN layer 301, a second semiconductor layer P-GaN layer 302, a third semiconductor layer N-GaN layer 303, a multi-quantum well light-emitting layer 304 and a fourth semiconductor layer P-GaN layer 305 on the sapphire substrate 1 by using hydrogen as a carrier, wherein the thicknesses of the buffer layer 2, the first semiconductor layer N-GaN layer 301, the second semiconductor layer P-GaN layer 302, the third semiconductor layer N-GaN layer 303, the multi-quantum well light-emitting layer 304 and the fourth semiconductor layer P-GaN layer 305 are 1000nm, 2;
s12: etching the layers by adopting ICP (inductively coupled plasma) until part of the second semiconductor layer 302 is exposed to form an arrayed module;
s13: continuing to etch the second semiconductor layer 302 until the first semiconductor layer 301 is exposed;
s14: growing a first contact electrode 401 on the rightmost side on the first semiconductor layer 301, and growing second contact electrodes SCE1501, SCE2502, and SCE3503 on the second semiconductor layer 302 exposed in the R, G, B cell, respectively;
s15: third contact electrodes TCE1601, TCE2602, and TCE3603 are respectively grown on the surface of the fourth semiconductor layer 305 in the R, G, B cell;
s16: preparing a red conversion layer 701 and a green conversion layer 702 on the surfaces of the third contact electrodes TCE1601 and TCE2602 of the R and G cells by deposition, respectively, wherein the lengths of the red conversion layer and the green conversion layer are smaller than those of TCE1 and TCE2, respectively;
s17: depositing DBR1, DBR2 and DBR3 on the surfaces of red conversion layer 701, green conversion layer 702 and third contact electrode TCE3603 of R, G, B units, the length of DBR3 being smaller than that of TCE3, by adjusting the thickness of the high and low refractive index thin films of the distributed Bragg reflection layer and alternately stacking thin film layersThe number controls the wavelength of the outgoing light, the wavelength of the reflected light and the ratio of transmission and reflection. The DBR1 is capable of reflecting all blue light and transmitting as much red light as possible; the DBR2 is capable of reflecting all blue light and transmitting as much green light as possible; DBR3 can the reflection part blue light, adjusts emergent light intensity to the light-emitting proportion of R, G, B three-color light is regulated and control, and the better full-color that realizes shows. Wherein, TiO2Thickness of 45nm, Al2O3Has a thickness of 67nm, the DBR1 comprises 13 stacked films, the DBR2 comprises 11 stacked films, the DBR3 comprises 5 stacked films, and the topmost and bottommost of all the stacked films are TiO2。
Fig. 5 is a schematic diagram of a driving method of R, G, B units of a full-color triode-controlled light emitting device, wherein the three units share a first contact electrode, the driving method is the same, and only color conversion layer modules are additionally arranged on the R and G units to convert blue light into required red light and green light respectively, so that full-color display is realized. Therefore, the detailed driving method is described here by taking the B cell as an example, and the other two units are not described again. As shown in FIG. 5, a small power variable input signal V is applied between the first contact electrode and the second contact electrode SCE31While applying a forward bias voltage V between the first contact electrode and the transparent third contact electrode TCE32The blue light emitting triode chip can emit light, the power amplification effect on the input signal is realized, and the LED is driven by a low-power input signal. Referring to fig. 6, the NPN transistor is connected to the common emitter of the LED, and the base and the emitter form an input loop, i.e. a small-power variable input signal V is applied between the first contact electrode and the second contact electrode SCE31The collector and the emitter form an output loop, namely a forward bias voltage V is applied between the first contact electrode and the third contact electrode TCE32And the triode can drive the LED to emit light.
The foregoing is directed to preferred embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow. However, any simple modification, equivalent change and modification of the above embodiments according to the technical essence of the present invention are within the protection scope of the technical solution of the present invention.
Claims (10)
1. A full-color three-pole luminous tube display device is characterized by comprising a buffer layer, a first semiconductor layer arranged on the buffer layer, a first contact electrode arranged on the first semiconductor layer, an R unit used for displaying red light, a G unit used for displaying green light and a B unit used for displaying blue light;
the R unit, the G unit and the B unit sequentially comprise a second semiconductor layer, a third semiconductor layer, a blue light emitting layer, a fourth semiconductor layer and a third contact electrode from bottom to top; the R unit, the G unit and the B unit respectively comprise a second contact electrode arranged on the second semiconductor layer; the R unit further comprises a red light color conversion layer and a distributed Bragg reflection layer DBR1 which are sequentially arranged on a third contact electrode in the unit, the G unit further comprises a green light color conversion layer and a distributed Bragg reflection layer DBR2 which are sequentially arranged on the third contact electrode in the unit, and the B unit further comprises a distributed Bragg reflection layer DBR3 which is arranged on the third contact electrode in the unit;
wherein a variable input signal is applied between the first contact electrode and the second contact electrode of the R cell, the G cell and the B cell, respectively, and a forward bias voltage is applied between the first contact electrode and the third contact electrode of the R cell, the G cell and the B cell, respectively, so that the R cell, the G cell and the B cell emit light.
2. The full-color triode display device according to claim 1, wherein the first semiconductor layer is an N-type semiconductor layer, the second semiconductor layer is a P-type semiconductor layer, the third semiconductor layer is an N-type semiconductor layer, and the fourth semiconductor layer is a P-type semiconductor layer; or the first semiconductor layer is a P-type semiconductor layer, the second semiconductor layer is an N-type semiconductor layer, the third semiconductor layer is a P-type semiconductor layer, and the fourth semiconductor layer is an N-type semiconductor layer.
3. The full-color triode display device according to claim 2, wherein when the first semiconductor layer is an N-type semiconductor layer, the second semiconductor layer is a P-type semiconductor layer, the third semiconductor layer is an N-type semiconductor layer, and the fourth semiconductor layer is a P-type semiconductor layer, the voltage signal applied between the first contact electrode and the second contact electrode in the R cell, the G cell, and the B cell is positive, and the voltage signal applied between the first contact electrode and the third contact electrode in the R cell, the G cell, and the B cell is positive.
4. The full-color triode display device according to claim 2, wherein when the first semiconductor layer is a P-type semiconductor layer, the second semiconductor layer is an N-type semiconductor layer, the third semiconductor layer is a P-type semiconductor layer, and the fourth semiconductor layer is an N-type semiconductor layer, the voltage signal applied between the first contact electrode and the second contact electrode in the R cell, the G cell, and the B cell is negative, and the voltage signal applied between the first contact electrode and the third contact electrode in the R cell, the G cell, and the B cell is negative.
5. The device as claimed in claim 1, wherein the first semiconductor layer is a heavily doped semiconductor layer with a doping concentration 1 to 5 orders of magnitude higher than that of the second semiconductor layer.
6. The full-color triode display device according to claim 1, wherein the magnitude of the voltage applied between the first contact electrode and the second contact electrode in the R cell, the G cell and the B cell is smaller than the magnitude of the voltage applied between the first contact electrode and the third contact electrode in the R cell, the G cell and the B cell.
7. A full-colour triode light-emitting display according to claim 1A member characterized in that the distributed Bragg reflection layers provided in the R unit, the G unit and the B unit are each formed by stacking two kinds of films having a high refractive index and a low refractive index, and the film thicknesses of the respective layers are set to
Determining, wherein n is the refractive index of the film, d is the thickness of the film, theta is the light incidence angle, lambda is the central wavelength, q is a constant, q is not less than 0, and when q is a positive odd number, the reflectivity has an extreme value; and respectively setting the number of the film stacking layers of the three distributed Bragg reflection layers as x, y and z, wherein the three layers are N or N +0.5, and N is a positive integer.
8. The full-color triode display device according to claim 7, wherein the distributed Bragg reflector DBR1 in the R unit is used for totally reflecting blue light and highly transmitting red light, the distributed Bragg reflector DBR2 in the G unit is used for totally reflecting blue light and highly transmitting green light, and the distributed Bragg reflector DBR3 in the B unit is used for reflecting part of blue light and adjusting light intensity, so as to adjust and control the light emitting proportion of RGB three-color light and better realize full-color display.
9. The device of claim 1, wherein the buffer layer, the first semiconductor layer, the second semiconductor layer, the third semiconductor layer, the blue light emitting layer, and the fourth semiconductor layer are single-layer semiconductor structures having the same doping concentration, or multi-layer semiconductor structures having graded or graded doping concentrations.
10. A manufacturing method of a full-color three-pole luminous tube display device is characterized by comprising the following steps:
sequentially growing a buffer layer, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a blue light emitting layer and a fourth semiconductor layer on a substrate;
etching the layer until part of the second semiconductor layer is exposed to form an array module, and dividing the array module into an R unit, a G unit and a B unit;
continuously etching the exposed second semiconductor layer until the first semiconductor layer is exposed;
growing a first contact electrode on the exposed first semiconductor layer; growing a second contact electrode on the second semiconductor layer exposed in the R unit, the G unit and the B unit respectively;
respectively growing a third contact electrode on the surface of the fourth semiconductor layer in the R unit, the G unit and the B unit;
preparing a red light color conversion layer and a green light color conversion layer on the surfaces of the third contact electrodes of the R unit and the G unit respectively;
and respectively depositing a distributed Bragg reflection layer on the surfaces of the red light color conversion layer, the green light color conversion layer and the third contact electrode of the B unit of the R unit and the G unit.
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