JP3065263B2 - Light emitting device and LED display using the same - Google Patents

Light emitting device and LED display using the same

Info

Publication number
JP3065263B2
JP3065263B2 JP8350253A JP35025396A JP3065263B2 JP 3065263 B2 JP3065263 B2 JP 3065263B2 JP 8350253 A JP8350253 A JP 8350253A JP 35025396 A JP35025396 A JP 35025396A JP 3065263 B2 JP3065263 B2 JP 3065263B2
Authority
JP
Japan
Prior art keywords
light
led chip
light emitting
coating portion
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP8350253A
Other languages
Japanese (ja)
Other versions
JPH10190065A (en
Inventor
邦浩 永峰
訓宏 泉野
勇一 藤原
勇人 竹内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP8350253A priority Critical patent/JP3065263B2/en
Publication of JPH10190065A publication Critical patent/JPH10190065A/en
Priority to JP32193099A priority patent/JP3729001B2/en
Application granted granted Critical
Publication of JP3065263B2 publication Critical patent/JP3065263B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Engineering & Computer Science (AREA)
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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本願発明は、バックライト光
源、光センサ−や光プリンターなどの読みとり／書き込
み光源、各種デ−タなどが表示可能な表示装置に用いら
れる発光装置に係わり、特に蛍光物質と、発光素子と、
を有し高輝度且つ均一に発光可能な発光装置及びそれを
用いたＬＥＤ表示器に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a backlight light source, a read / write light source such as an optical sensor and an optical printer, and a light emitting device used for a display device capable of displaying various data, and particularly to a fluorescent material. And a light emitting element,
TECHNICAL FIELD The present invention relates to a light emitting device having high luminance and capable of emitting light uniformly and an LED display using the same.

【０００２】[0002]

【従来の技術】今日、ＲＧＢ（赤色系、緑色系、青色
系）において、１０００ｍｃｄ以上にも及ぶ超高輝度に
発光可能な発光素子（以下ＬＥＤチップとも言う。）が
それぞれ開発された。これに伴い、赤色系（Ｒ）、緑色
系（Ｇ）、青色系（Ｂ）が発光可能な各ＬＥＤチップを
用い混色発光させることでフルカラーＬＥＤ表示器が設
置されつつある。このようなＬＥＤ表示器例としてフル
カラ−大型映像装置などの他に、単一色表示を用いた文
字表示板等がある。単一色表示として白色系は赤色系な
どの注意を引きつける色とは異なり、そのため長時間視
認しても疲れにくい。このことから特に白色系などの単
一色ＬＥＤ表示器が要望されている。2. Description of the Related Art At present, light-emitting elements (hereinafter, also referred to as LED chips) capable of emitting light with an ultra-high luminance of 1000 mcd or more in RGB (red, green, and blue) have been developed. Along with this, a full-color LED display is being installed by causing each of the LED chips capable of emitting red (R), green (G), and blue (B) to emit mixed color light. Examples of such an LED display include a character display board using a single color display, in addition to a full-color large-sized image device. As a single color display, a white system is different from a color that draws attention, such as a red system, and is therefore less tiring even when viewed for a long time. For this reason, a single color LED display such as a white color display is particularly desired.

【０００３】一方、ＬＥＤチップは優れた単色性ピーク
波長を有する。そのため白色系などを表示させる場合に
は、ＲＧＢやＢ（青色系）Ｙ（黄色系）の混色など２種
類以上のＬＥＤチップからの発光を混色させる必要があ
る。しかし、行き先表示板等に用いられるＬＥＤ表示器
などにおいては必ずしも２種類以上のＬＥＤチップを用
いて白色系など表示させる必要性はない。On the other hand, LED chips have an excellent monochromatic peak wavelength. Therefore, when displaying a white color or the like, it is necessary to mix light emission from two or more types of LED chips such as a mixed color of RGB, B (blue) and Y (yellow). However, in an LED display or the like used for a destination display board or the like, it is not always necessary to use two or more types of LED chips to display white or the like.

【０００４】そこで本願出願人は、ＬＥＤチップと蛍光
物質により青色発光ダイオードからの発光を色変換させ
て他の色などが発光可能な発光ダイオードとして特開平
５−１５２６０９号公報、特開平７−９９３４５号公報
などに記載された発光ダイオードを開発した。これらの
発光ダイオードによって、１種類のＬＥＤチップを用い
て白色系など種々の発光色を発光させることができる。Accordingly, the applicant of the present application has proposed a light emitting diode capable of emitting light of another color by converting the color of light emitted from a blue light emitting diode by using an LED chip and a fluorescent substance as disclosed in Japanese Patent Application Laid-Open Nos. 5-152609 and 7-99345. The light-emitting diode described in Japanese Patent Publication No. 1993-216, etc. was developed. With these light-emitting diodes, various kinds of luminescent colors such as white light can be emitted using one type of LED chip.

【０００５】具体的には、発光層のエネルギー・バンド
ギャップが大きいＬＥＤチップをリードフレームの先端
に設けられたカップ上などに配置する。ＬＥＤチップ
は、ＬＥＤチップが設けられたメタルステムやメタルポ
ストとそれぞれ電気的に接続させる。そして、ＬＥＤチ
ップを被覆するモールド部材中などにＬＥＤチップから
の光を吸収し波長変換する蛍光体を含有させて形成させ
てある。Specifically, an LED chip having a large energy band gap of a light emitting layer is disposed on a cup provided at the tip of a lead frame. The LED chip is electrically connected to a metal stem or a metal post provided with the LED chip. Then, a fluorescent material that absorbs light from the LED chip and converts the wavelength is contained in a mold member that covers the LED chip.

【０００６】この場合、青色系の発光ダイオードと、そ
の発光を吸収し黄色系を発光する蛍光物質などを選択す
ることにより、これらの発光の混色を利用して白色系を
発光させることができる。このような発光ダイオード
は、白色系を発光する発光ダイオードとして利用した場
合においても十分な輝度を発光する発光ダイオードとし
て利用することができる。In this case, by selecting a blue light emitting diode and a fluorescent substance that absorbs the emitted light and emits a yellow light, a white light can be emitted by using a mixed color of these lights. Such a light emitting diode can be used as a light emitting diode that emits sufficient luminance even when used as a light emitting diode that emits white light.

【０００７】[0007]

【発明が解決しようとする課題】しかしながら、発光ダ
イオードに用いられるマウント・リード上の反射カップ
内などに単にＬＥＤチップ及び蛍光物質を実装させる
と、発光観測面において色むらを生じる場合がある。よ
り詳しくは、発光観測面側から見てＬＥＤチップが配置
された中心部が青色ぽっく、その周辺にリング状に黄、
緑や赤色っぽい部分が見られる場合がある。人間の色調
感覚は、白色において特に敏感である。そのため、僅か
な色調差でも赤っぽい白、緑色っぽい白、黄色っぽい白
などと感じる。However, if an LED chip and a fluorescent substance are simply mounted in a reflection cup on a mount lead used for a light emitting diode, color unevenness may occur on a light emission observation surface. More specifically, when viewed from the light emission observation surface side, the center where the LED chip is arranged is blueish, and the periphery thereof is yellow in a ring shape,
Green or reddish parts may be seen. Human tone perception is particularly sensitive in white. Therefore, even a slight difference in color tone is perceived as reddish white, greenish white, yellowish white, or the like.

【０００８】このような発光観測面を直視することによ
って生ずる色むらは、品質上好ましくないばかりでな
く、ＬＥＤ表示器に応用した場合における表示面の色調
むらや、光センサーなどの精密機器における誤差を生ず
ることにもなる。さらに、このような発光装置は、時間
と共に発光輝度が低下する傾向にあるという問題を有す
る。本願発明は、上記問題点を解決し発光観測面におけ
る色調むらが極めて少なく高輝度に白色系などが発光可
能な発光装置及びそれを用いた表示装置を提供すること
にある。[0008] Such color unevenness caused by looking directly at the light emission observation surface is not only unfavorable in terms of quality, but also uneven color tone of the display surface when applied to an LED display, and errors in precision equipment such as an optical sensor. Will also occur. Further, such a light emitting device has a problem that the light emission luminance tends to decrease with time. An object of the present invention is to solve the above problems and to provide a light emitting device capable of emitting a white light or the like with high brightness with very little color tone unevenness on a light emission observation surface and a display device using the same.

【０００９】[0009]

【課題を解決するための手段】本願発明は、開口部底面
においてＬＥＤチップを配置すると共に該開口部内にコ
ーティング部を有する発光装置であって、前記コーティ
ング部がＬＥＤチップ上の第１のコーティング部と、第
１のコーティング部上にＬＥＤチップからの可視光によ
って励起され可視光を発光する蛍光物質が含まれた第２
のコーティング部と、を有する発光装置とすることによ
って上記課題を解決できるものである。また、本願発明
は、ＬＥＤチップが窒化物系化合物半導体であると共
に、蛍光物質がセリウムで付活されたイットリウム・ア
ルミニウム・ガーネット系蛍光物質の発光装置である。
さらに、第１のコーティング部の表面が、発光観測面側
から見て窪んだ凹球面状である発光装置であり、開口部
の側壁形状を階段状に形成し、段ごとに第１のコ−ティ
ング部及び第２のコーティング部を有する発光装置でも
ある。開口部を有する基板が、セラミックス、金属基
板、熱伝導性フィラ−入り耐熱性有機樹脂基板から選択
される１つである発光装置である。さらに、本願発明
は、前記開口部が同一基板に２以上配置されると共に、
開口部内に配された導体配線と、前記ＬＥＤチップとが
電気的に接続されたＬＥＤ表示器でもある。According to the present invention, there is provided a light emitting device having an LED chip disposed at a bottom surface of an opening and having a coating portion in the opening, wherein the coating portion is a first coating portion on the LED chip. And a second material containing a fluorescent material that is excited by visible light from the LED chip and emits visible light on the first coating portion.
The above problem can be solved by providing a light emitting device having the coating section of (1). Further, the present invention is a light emitting device of an yttrium aluminum garnet fluorescent material in which the LED chip is a nitride compound semiconductor and the fluorescent material is activated by cerium.
Further, the light emitting device is a light emitting device in which the surface of the first coating portion is concave and spherical when viewed from the light emission observation surface side, and the side wall shape of the opening is formed in a step shape, and the first core is provided for each step. It is also a light emitting device having a lighting section and a second coating section. A light-emitting device in which the substrate having an opening is one selected from a ceramic, a metal substrate, and a heat-resistant organic resin substrate containing a thermally conductive filler. Further, according to the present invention, two or more of the openings are arranged on the same substrate,
The present invention is also an LED display in which conductor wiring arranged in the opening and the LED chip are electrically connected.

【００１０】[0010]

【作用】本願発明は、ＬＥＤチップ近傍の第１のコーテ
ィング部と、第１のコーティング部上に蛍光物質を有す
る第２のコーティング部とすることによってＬＥＤチッ
プから放出される光の光路長差を実質的に低減させるこ
とによって発光装置の色調むらを低減させると共に蛍光
物質が設けられたことによる光の閉じこめを緩和させる
ことができる。そのため、長時間の使用においても発光
輝度の低下が少ない均一光が発光可能な発光装置やＬＥ
Ｄ表示器とすることができる。According to the present invention, an optical path length difference of light emitted from an LED chip is reduced by forming a first coating portion near an LED chip and a second coating portion having a fluorescent substance on the first coating portion. Substantially reducing the color tone unevenness of the light emitting device and alleviating light confinement due to the provision of the fluorescent substance can be achieved. Therefore, a light-emitting device or an LE capable of emitting uniform light with little decrease in emission luminance even when used for a long time
It can be a D display.

【００１１】[0011]

【発明の実施の形態】本願発明者らは、種々の実験の結
果、発光素子と蛍光物質とを特定の配置関係とすること
によって、発光観測面における色調むらや輝度低下を改
善できることを見出し本願発明を成すに至った。BEST MODE FOR CARRYING OUT THE INVENTION As a result of various experiments, the present inventors have found that by setting a light emitting element and a fluorescent substance in a specific arrangement relationship, it is possible to improve color tone unevenness and luminance reduction on a light emission observation surface. Invented the invention.

【００１２】本願発明の構成によって、色調むらや輝度
低下の改善が図れることは定かではないが以下の如く考
えられる。即ち、発光素子から放出された光は、図５
（Ａ）に示すように（ａ）、（ｂ）、（ｃ）、（ｄ）、
（ｅ）、（ｆ）の如く様々な角度に放出される。このよ
うな光は、蛍光物質が含有されたコーティング部を通過
する光路長がそれぞれ異なる。特に、ＬＥＤチップから
放出される光の角度が浅い光ほど光路長が長くなる傾向
にある。このため、光路長差によって蛍光物質に変換さ
れる光量が異なり、色調むらが生ずることとなる。特に
（ｄ）、（ｅ）の領域では光路長が長いためＬＥＤチッ
プからの光が蛍光物質によって波長変換される光が多く
なり、発光観測面側から見て色調むらが生じやすいと考
えられる。また、ＬＥＤチップから放出される光は、半
導体内を導波管の如く伝搬し放出される光（ｆ）ある。
このような光もＬＥＤチップ周辺の色調むら原因になる
と考えられる。Although it is not clear that the arrangement of the present invention can improve the uneven color tone and the reduction in luminance, it is considered as follows. In other words, the light emitted from the light emitting element is
As shown in (A), (a), (b), (c), (d),
(E) and (f) are emitted at various angles. Such light has different optical path lengths passing through the coating portion containing the fluorescent substance. In particular, light having a smaller angle of light emitted from the LED chip tends to have a longer optical path length. For this reason, the amount of light converted into the fluorescent substance varies depending on the optical path length difference, and color tone unevenness occurs. In particular, in the regions (d) and (e), since the light path length is long, the light from the LED chip whose wavelength is converted by the fluorescent substance increases, and it is considered that color tone unevenness is likely to occur when viewed from the light emission observation surface side. The light emitted from the LED chip is light (f) that propagates through the semiconductor like a waveguide and is emitted.
It is considered that such light also causes uneven color tone around the LED chip.

【００１３】また、ＬＥＤチップ上に蛍光物質を有する
コ−ティング部を直接配置させると、蛍光物質によって
ＬＥＤチップからの光が反射・散乱される割合が増え
る。特に、ＬＥＤチップ近傍では、ＬＥＤチップからの
可視光が蛍光体物質によって反射散乱などされる回数が
極端に増加し光の密度が高くなる。この結果、コ−ティ
ング部の母材である有機樹脂などが劣化しやすく、最終
的には輝度が低下する傾向にあると考えられる。Further, when the coating portion having the fluorescent material is directly disposed on the LED chip, the ratio of the fluorescent material reflecting and scattering light from the LED chip increases. In particular, in the vicinity of the LED chip, the number of times that the visible light from the LED chip is reflected and scattered by the fluorescent substance is extremely increased, and the light density is increased. As a result, it is considered that the organic resin or the like, which is the base material of the coating portion, is liable to deteriorate, and the luminance tends to eventually decrease.

【００１４】本願発明は、図５（Ｂ）の如く、ＬＥＤチ
ップ上に第１のコーティング部、第２のコーティング部
の積層構造とすることにより光路長差を少なくすると共
にＬＥＤチップ近傍の光の散乱を少なく輝度の低下を抑
制しうるものである。According to the present invention, as shown in FIG. 5B, by forming a first coating portion and a second coating portion on the LED chip, a difference in optical path length is reduced, and light in the vicinity of the LED chip is reduced. It is possible to reduce scattering and suppress a decrease in luminance.

【００１５】具体的な発光装置の一例として、チップタ
イプＬＥＤを図２に示す。チップタイプＬＥＤとして外
部電極を有し凹部が形成されたパッケージを用いた。凹
部内に窒化ガリウム系化合物半導体を発光層としたＬＥ
Ｄチップがエポキシ樹脂によってダイボンディングされ
ている。ＬＥＤチップの各電極と外部電極とは、それぞ
れ金線を用いてワイヤーボンディングされている。凹部
のＬＥＤチップ上に第１のコーティング部としてエポキ
シ樹脂を塗布し乾燥させた。次に第２のコーティング部
として、シリコーン樹脂の基材中に（ＲＥ1-xＳｍx）3
（Ａｌ1-yＧａy）5Ｏ12：Ｃｅ蛍光物質を含有させたも
のを第１のコーティング部上に形成させた。FIG. 2 shows a chip type LED as an example of a specific light emitting device. As the chip type LED, a package having external electrodes and a concave portion was used. LE with gallium nitride-based compound semiconductor as light emitting layer in recess
The D chip is die-bonded with an epoxy resin. Each electrode of the LED chip and the external electrode are wire-bonded using a gold wire. An epoxy resin was applied as a first coating portion on the recessed LED chip and dried. Next, as a second coating portion, (RE 1-x Sm x ) 3
A material containing (Al 1-y G ay ) 5 O 12 : Ce phosphor was formed on the first coating portion.

【００１６】第１のコーティングと第２のコーティング
部は、積層構成となっている。また、図２の如く第１の
コーティング部の断面端部が上がっている。そのため第
１のコーティング部の表面が、発光観測面側から見て窪
んだ凹球面状をとる。第１のコーティング部が凹球面状
をとることにより第２のコーティング部中の蛍光物質を
より中心付近に集めることが可能となる。このような形
状は、第１のコーティング部であるエポキシ樹脂の粘度
及び硬化温度・時間を制御して作成することができる。
これにより実質的な光路長差を少なくし、より色調むら
や輝度低下の少ない発光装置とすることができる。以
下、本願発明の構成部材について詳述する。The first coating and the second coating have a laminated structure. Also, as shown in FIG. 2, the cross-sectional end of the first coating portion is raised. Therefore, the surface of the first coating portion has a concave spherical shape as viewed from the light emission observation surface side. When the first coating portion has a concave spherical shape, the fluorescent substance in the second coating portion can be collected closer to the center. Such a shape can be created by controlling the viscosity and the curing temperature and time of the epoxy resin as the first coating portion.
As a result, a substantial difference in optical path length can be reduced, and a light emitting device with less color tone unevenness and lower luminance can be obtained. Hereinafter, the constituent members of the present invention will be described in detail.

【００１７】（コーティング部１０１、１０２、２０
１、２０２、４０１、４０２）本願発明のコーティング
部とは、ＬＥＤチップを外部環境などから保護するもの
である。コーティング部は、ＬＥＤチップ上に設けられ
るものであり少なくとも一部にＬＥＤチップからの可視
光によって励起され可視光を発光する蛍光物質を含む樹
脂や硝子などである。いずれにしてもコーティング部
は、ＬＥＤチップからの可視光の行路長差を低減させる
ことによりＬＥＤチップと蛍光物質からの可視光を十分
混色などさせられるものである。特に、本願発明のコー
ティング部は、蛍光物質が含有された単なる層形状とし
たものよりもＬＥＤチップから放出された光の光路長差
がより少なくなるように設けられてある。また、効率よ
く外部に放出されるよう多層構成とさせてある。したが
って、コーティング部の形状は、凸レンズ形状、種々の
多層形状などが挙げられる。また、薄膜に形成されたコ
ーティング部を接着させることによって形成させても良
い。(Coating units 101, 102, 20
1, 202, 401, 402) The coating part of the present invention protects the LED chip from the external environment and the like. The coating portion is provided on the LED chip, and is at least partially made of a resin or glass containing a fluorescent substance that emits visible light when excited by visible light from the LED chip. In any case, the coating portion can sufficiently mix the visible light from the LED chip and the fluorescent substance by reducing the difference in the path length of the visible light from the LED chip. In particular, the coating portion of the present invention is provided so that the difference in the optical path length of the light emitted from the LED chip is smaller than that of a simple layer shape containing a fluorescent substance. In addition, it has a multilayer structure so that it is efficiently emitted to the outside. Therefore, the shape of the coating portion includes a convex lens shape, various multilayer shapes, and the like. Alternatively, it may be formed by bonding a coating portion formed on a thin film.

【００１８】第１のコーティング部１０１と、第２のコ
ーティング部１０２の基材は、同じ材料を用いてもよい
し、異なる材料を用いてもよい。異なる材料を用いる場
合は、より外部に近い側に耐候性のある材料を用いるこ
とが好ましい。また、より内部にある材料ほど膨張の少
ない材料を用いることが好ましい。このようなコーティ
ング部を構成する具体的基材としては、エポキシ樹脂、
ユリア樹脂、アクリル樹脂、シリコーン樹脂などの透光
性樹脂や硝子などが好適に用いられる。また、第１のコ
ーティング部及び第２のコーティング部の厚みは、それ
ぞれ同じでも良いし、異なっていても良い。蛍光物質と
しては、ＬＥＤチップからの光などを考慮して有機、無
機の染料や顔料等種々のものが挙げられる。The base material of the first coating part 101 and the base material of the second coating part 102 may be made of the same material or different materials. When a different material is used, it is preferable to use a weather-resistant material on the side closer to the outside. Further, it is preferable to use a material having a smaller expansion as the material is located further inside. As a specific base material constituting such a coating portion, epoxy resin,
Translucent resins such as urea resin, acrylic resin, and silicone resin, glass, and the like are preferably used. Further, the thickness of the first coating portion and the thickness of the second coating portion may be the same or different. Examples of the fluorescent substance include various substances such as organic and inorganic dyes and pigments in consideration of light from the LED chip.

【００１９】第１及び／又は第２のコーティング部に
は、拡散剤、着色剤や光安定剤を含有させても良い。着
色剤を含有させることによってＬＥＤチップ及び／又は
蛍光物質からの光を所望にカットするフィルター効果を
持たせることができる。拡散剤を含有させることによっ
て指向特性を所望に調節させることができる。光安定剤
である紫外線吸収剤を含有させることによってコーティ
ング部を構成する樹脂などの劣化を抑制することができ
る。具体的な拡散剤としては、チタン酸バリウム、酸化
チタン、酸化アルミニウム、酸化珪素等が好適に用いら
れる。光安定剤としては、ベンゾトリアゾール系、ベン
ゾフェノン系、サリシレート系、シアノアクリレート
系、ヒンダードアミン系などが挙げられる。The first and / or second coating portions may contain a diffusing agent, a coloring agent and a light stabilizer. By including a coloring agent, a filter effect of cutting light from the LED chip and / or the fluorescent substance as desired can be provided. By including a diffusing agent, the directional characteristics can be adjusted as desired. By incorporating an ultraviolet absorber as a light stabilizer, it is possible to suppress deterioration of the resin or the like constituting the coating portion. As a specific diffusing agent, barium titanate, titanium oxide, aluminum oxide, silicon oxide, or the like is suitably used. Examples of the light stabilizer include benzotriazole, benzophenone, salicylate, cyanoacrylate, and hindered amine.

【００２０】また、コーティング部の主材料は、モール
ド部材と同じ材料を用いてもよいし、異なる部材として
も良い。コーティング部を異なる部材で形成させた場合
においては、ＬＥＤチップや導電性ワイヤーなどにかか
る外部応力や熱応力をより緩和させることもできる。The main material of the coating portion may be the same material as the mold member or may be a different member. When the coating portion is formed of a different member, external stress and thermal stress applied to the LED chip, the conductive wire, and the like can be further reduced.

【００２１】（蛍光物質）本願発明に用いられる蛍光物
質としては、少なくとも半導体発光層から発光された可
視光で励起されて可視光を発光する蛍光物質をいう。Ｌ
ＥＤチップから発光した可視光と、蛍光物質から発光す
る可視光が補色関係などにある場合やＬＥＤチップから
の可視光とそれによって励起され発光する蛍光物質の可
視光がそれぞれ光の３原色（赤色系、緑色系、青色系）
に相当する場合、ＬＥＤチップからの発光と、蛍光物質
からの発光と、を混色表示させると白色系の発光色表示
を行うことができる。そのため発光装置の外部には、Ｌ
ＥＤチップからの発光と蛍光物質からの発光とがコーテ
ィング部などを透過する必要がある。このような調整
は、蛍光物質と樹脂などとの比率や塗布、充填量などを
種々調整する。或いは、発光素子の発光波長を種々選択
することにより白色を含め電球色など任意の色調を提供
させることができる。(Fluorescent substance) The fluorescent substance used in the present invention is a fluorescent substance that emits visible light when excited by at least visible light emitted from the semiconductor light emitting layer. L
When the visible light emitted from the ED chip and the visible light emitted from the fluorescent substance are in a complementary color relationship or the like, the visible light from the LED chip and the visible light of the fluorescent substance excited and emitted by the light are respectively three primary colors (red). System, green system, blue system)
When light emission from the LED chip and light emission from the fluorescent substance are mixed and displayed, white light emission color display can be performed. Therefore, L
It is necessary that the light emitted from the ED chip and the light emitted from the fluorescent substance pass through the coating part and the like. For such adjustment, the ratio between the fluorescent substance and the resin and the like, the application and the filling amount are variously adjusted. Alternatively, an arbitrary color tone such as a light bulb color including white can be provided by variously selecting the emission wavelength of the light emitting element.

【００２２】さらに、第２のコーティング部内における
蛍光物質の含有分布は、混色性や耐久性にも影響する。
すなわち、第２のコーティング部の外部表面側からＬＥ
Ｄチップに向かって蛍光物質の分布濃度が高い場合は、
外部環境からの水分などの影響をより受けにくく水分な
どによる劣化を抑制しやすい。Further, the content distribution of the fluorescent substance in the second coating portion affects the color mixing property and the durability.
That is, LE from the outer surface side of the second coating portion.
When the distribution concentration of the fluorescent substance is high toward the D chip,
It is less susceptible to moisture and the like from the external environment, and it is easy to suppress deterioration due to moisture and the like.

【００２３】他方、蛍光物質の含有分布をＬＥＤチップ
からモールド部材表面側に向かって分布濃度が高くなる
と外部環境からの水分の影響を受けやすいがＬＥＤチッ
プからの発熱、照射強度などの影響がより少なく蛍光物
質の劣化を抑制することもできる。したがって、使用環
境によって種々選択することができる。このような、蛍
光物質の分布は、蛍光物質を含有する基材、形成温度、
粘度や蛍光物質の形状、粒度分布などを調整させること
によって種々形成させることができる。On the other hand, when the concentration distribution of the fluorescent substance increases from the LED chip toward the surface of the mold member, the distribution of the fluorescent substance is liable to be affected by moisture from the external environment. The deterioration of the fluorescent substance can be suppressed to a small extent. Therefore, various selections can be made according to the use environment. Such a distribution of the fluorescent substance, the base material containing the fluorescent substance, the formation temperature,
Various shapes can be formed by adjusting the viscosity, the shape of the fluorescent substance, the particle size distribution, and the like.

【００２４】半導体発光層によって励起される蛍光物質
は、無機蛍光体、有機蛍光体、蛍光染料、蛍光顔料など
種々のものが挙げられる。具体的な蛍光物質としては、
ペリレン系誘導体やセリウム付活されたイットリウム・
アルミニウム・ガーネット蛍光体である（ＲＥ1-xＳ
ｍx）3（Ａｌ1-yＧａy）5Ｏ12：Ｃｅ（０≦ｘ＜１、０
≦ｙ≦１、但し、ＲＥは、Ｙ，Ｇｄ,Ｌａ，Ｌｕ，Ｓｃ
からなる群より選択される少なくとも一種の元素であ
る。）などが挙げられる。特に、蛍光物質として（ＲＥ
1-xＳｍx）3（Ａｌ1-yＧａy）5Ｏ12：Ｃｅを用いた場合
には、エネルギーバンドギャップの大きい窒化物系化合
物半導体を発光層に用いたＬＥＤチップと接する或いは
近接して配置され放射照度として（Ｅｅ）＝３Ｗ・ｃｍ
-2以上１０Ｗ・ｃｍ-2以下においても高効率に十分な耐
光性有する発光装置とすることができる。The fluorescent substance excited by the semiconductor light emitting layer includes various substances such as an inorganic fluorescent substance, an organic fluorescent substance, a fluorescent dye and a fluorescent pigment. Specific fluorescent substances include:
Perylene derivatives and yttrium with cerium
Aluminum garnet phosphor (RE 1-x S
m x) 3 (Al 1- y Ga y) 5 O 12: Ce (0 ≦ x <1,0
≦ y ≦ 1, where RE is Y, Gd, La, Lu, Sc
At least one element selected from the group consisting of ). In particular, as a fluorescent substance (RE
1-x Sm x) 3 ( Al 1-y Ga y) 5 O 12: in the case of using the Ce is greater nitride compound semiconductor energy band gap LED chip and contact or proximity using the light-emitting layer (Ee) = 3W · cm as irradiance
It can be a light emitting device having sufficient light resistance in high efficiency -2 10 W · cm -2 or less.

【００２５】（ＲＥ1-xＳｍx）3（Ａｌ1-yＧａy）
5Ｏ12：Ｃｅ蛍光体は、ガーネット構造のため、熱、光
及び水分に強く、励起スペクトルのピークが４７０ｎｍ
付近などにさせることができる。また、発光ピークも５
３０ｎｍ付近にあり７２０ｎｍまで裾を引くブロードな
発光スペクトルを持たせることができる。しかも、組成
のＡｌの一部をＧａで置換することで発光波長が短波長
にシフトし、また組成のＹの一部をＧｄで置換すること
で、発光波長が長波長へシフトする。このように組成を
変化することで発光色を連続的に調節することが可能で
ある。したがって、長波長側の強度がＧｄの組成比で連
続的に変えられるなど窒化物半導体の青色系発光を利用
して白色系発光に変換するための理想条件を備えてい
る。(RE 1-x Sm x ) 3 (Al 1-y G ay )
Since the 5 O 12 : Ce phosphor has a garnet structure, it is resistant to heat, light and moisture, and has a peak of an excitation spectrum of 470 nm.
It can be made nearby. The emission peak is 5
A broad emission spectrum that is near 30 nm and extends down to 720 nm can be provided. In addition, the emission wavelength shifts to a short wavelength by substituting a part of the Al in the composition with Ga, and the emission wavelength shifts to a long wavelength by substituting a part of the Y in the composition with Gd. By changing the composition in this way, the emission color can be continuously adjusted. Therefore, there is provided an ideal condition for converting the blue light emission of the nitride semiconductor to white light emission such that the intensity on the long wavelength side can be continuously changed by the composition ratio of Gd.

【００２６】このような蛍光体は、Ｙ、Ｇｄ、Ｃｅ、Ｓ
ｍ、Ａｌ、Ｌａ及びＧａの原料として酸化物、又は高温
で容易に酸化物になる化合物を使用し、それらを化学量
論比で十分に混合して原料を得る。又は、Ｙ、Ｇｄ、Ｃ
ｅ、Ｓｍの希土類元素を化学量論比で酸に溶解した溶解
液を蓚酸で共沈したものを焼成して得られる共沈酸化物
と、酸化アルミニウム、酸化ガリウムなどとを混合して
混合原料を得る。これにフラックスとしてフッ化アンモ
ニウム等のフッ化物を適量混合して坩堝に詰め、空気中
１３５０〜１４５０°Ｃの温度範囲で２〜５時間焼成し
て焼成品を得、次に焼成品を水中でボールミルして、洗
浄、分離、乾燥、最後に篩を通すことで得ることができ
る。Such phosphors include Y, Gd, Ce, S
An oxide or a compound which easily becomes an oxide at a high temperature is used as a raw material of m, Al, La and Ga, and these are sufficiently mixed in a stoichiometric ratio to obtain a raw material. Or Y, Gd, C
e, a co-precipitated oxide obtained by calcining a solution obtained by dissolving a rare earth element of Sm in an acid at a stoichiometric ratio with oxalic acid, and aluminum oxide, gallium oxide, etc., and mixing raw materials Get. An appropriate amount of a fluoride such as ammonium fluoride is mixed as a flux into the crucible, and calcined in air at a temperature in the range of 1350 to 1450 ° C. for 2 to 5 hours to obtain a calcined product. It can be obtained by ball milling, washing, separating, drying and finally passing through a sieve.

【００２７】本願発明の発光装置において、蛍光物質
は、２種類以上の蛍光物質を混合させてもよい。即ち、
Ａｌ、Ｇａ、Ｙ、Ｌａ及びＧｄやＳｍの含有量が異なる
２種類以上の（ＲＥ1-xＳｍx）3（Ａｌ1-yＧａy）
5Ｏ12：Ｃｅ蛍光体を混合させてＲＧＢの波長成分を増
やすことができる。In the light emitting device of the present invention, the fluorescent substance may be a mixture of two or more fluorescent substances. That is,
Al, Ga, Y, the content of La and Gd and Sm are two or more different (RE 1-x Sm x) 3 (Al 1-y Ga y)
By mixing 5 O 12 : Ce phosphor, the wavelength components of RGB can be increased.

【００２８】（ＬＥＤチップ１０３、２０３、４０３）
本願発明に用いられるＬＥＤチップとは、蛍光物質を効
率良く励起できる比較的短波長を効率よく発光可能な窒
化物系化合物半導体などが好適に挙げられる。このよう
なＬＥＤチップは、ＭＯＣＶＤ法等により基板上にＩｎ
ＧａＮ等の半導体を発光層として形成させることができ
る。半導体の構造としては、ＭＩＳ接合、ＰＩＮ接合や
ＰＮ接合などを有するホモ構造、ヘテロ構造あるいはダ
ブルへテロ構成のものが挙げられる。半導体層の材料や
その混晶度によって発光波長を種々選択することができ
る。また、半導体活性層を量子効果が生ずる薄膜に形成
させた単一量子井戸構造や多重量子井戸構造とすること
もできる。(LED chips 103, 203, 403)
The LED chip used in the present invention is preferably a nitride-based compound semiconductor capable of efficiently exciting a fluorescent substance and emitting light at a relatively short wavelength efficiently. Such an LED chip is formed on a substrate by MOCVD or the like.
A semiconductor such as GaN can be formed as the light emitting layer. Examples of the semiconductor structure include a homostructure having a MIS junction, a PIN junction, and a PN junction, a heterostructure, and a double heterostructure. Various emission wavelengths can be selected depending on the material of the semiconductor layer and the degree of mixed crystal thereof. Also, a single quantum well structure or a multiple quantum well structure in which the semiconductor active layer is formed as a thin film in which a quantum effect occurs can be used.

【００２９】窒化ガリウム系化合物半導体を使用した場
合、半導体基板にはサファイヤ、スピネル、ＳｉＣ、Ｓ
ｉ、ＺｎＯ等の材料が用いられる。結晶性の良い窒化ガ
リウムを形成させるためにはサファイヤ基板を用いるこ
とが好ましい。このサファイヤ基板上にＧａＮ、ＡｌＮ
等のバッファー層を低温で形成しその上にＰＮ接合を有
する窒化ガリウム半導体を形成させる。窒化ガリウム系
半導体は、不純物をドープしない状態でＮ型導電性を示
す。発光効率を向上させるなど所望のＮ型窒化ガリウム
半導体を形成させる場合は、Ｎ型ドーパントとしてＳ
ｉ、Ｇｅ、Ｓｅ、Ｔｅ、Ｃ等を適宜導入することが好ま
しい。一方、Ｐ型窒化ガリウム半導体を形成させる場合
は、Ｐ型ドーパンドであるＺｎ、Ｍｇ、Ｂｅ、Ｃａ、Ｓ
ｒ、Ｂａ等をドープさせる。When a gallium nitride-based compound semiconductor is used, sapphire, spinel, SiC, S
Materials such as i and ZnO are used. In order to form gallium nitride having good crystallinity, a sapphire substrate is preferably used. GaN, AlN on this sapphire substrate
Is formed at a low temperature, and a gallium nitride semiconductor having a PN junction is formed thereon. Gallium nitride-based semiconductors exhibit N-type conductivity without being doped with impurities. When a desired N-type gallium nitride semiconductor is formed, for example, to improve luminous efficiency, S
It is preferable to appropriately introduce i, Ge, Se, Te, C, and the like. On the other hand, when a P-type gallium nitride semiconductor is formed, P-type dopants such as Zn, Mg, Be, Ca, S
Doping with r, Ba, etc.

【００３０】窒化ガリウム系化合物半導体は、Ｐ型ドー
パントをドープしただけではＰ型化しにくいためＰ型ド
ーパント導入後に、炉による加熱、低速電子線照射やプ
ラズマ照射等によりアニールすることでＰ型化させるこ
とが好ましい。エッチングなどによりＰ型半導体及びＮ
型半導体の露出面を形成させた後、半導体層上にスパッ
タリング法や真空蒸着法などを用いて所望の形状の各電
極を形成させる。次に、形成された半導体ウエハー等を
ダイヤモンド製の刃先を有するブレードが回転するダイ
シングソーにより直接フルカットするか、又は刃先幅よ
りも広い幅の溝を切り込んだ後（ハーフカット）、外力
によって半導体ウエハーを割る。あるいは、先端のダイ
ヤモンド針が往復直線運動するスクライバーにより半導
体ウエハーに極めて細いスクライブライン（経線）を例
えば碁盤目状に引いた後、外力によってウエハーを割り
半導体ウエハーからチップ状にカットする。このように
して窒化ガリウム系化合物半導体であるＬＥＤチップを
形成させることができる。Since a gallium nitride-based compound semiconductor is difficult to be converted into a P-type only by doping with a P-type dopant, after the introduction of the P-type dopant, the gallium nitride-based compound semiconductor is annealed by heating in a furnace, low-speed electron beam irradiation, plasma irradiation, or the like. Is preferred. P-type semiconductor and N
After the exposed surface of the mold semiconductor is formed, each electrode having a desired shape is formed on the semiconductor layer by using a sputtering method, a vacuum evaporation method, or the like. Next, the formed semiconductor wafer or the like is directly full-cut by a dicing saw in which a blade having a diamond cutting edge is rotated, or a groove having a width larger than the cutting edge width is cut (half cut). Crack the wafer. Alternatively, an extremely thin scribe line (meridian) is drawn on the semiconductor wafer, for example, in a checkerboard pattern by a scriber in which a diamond needle at the tip reciprocates linearly, and then the wafer is cut by an external force and cut into chips from the semiconductor wafer. Thus, an LED chip that is a gallium nitride-based compound semiconductor can be formed.

【００３１】本願発明の発光装置において白色系を発光
させる場合、蛍光物質との補色等を考慮して発光素子の
主発光波長は４００ｎｍ以上５３０ｎｍ以下が好まし
く、４２０ｎｍ以上４９０ｎｍ以下がより好ましい。Ｌ
ＥＤチップと蛍光物質との効率をそれぞれより向上させ
るためには、４５０ｎｍ以上４７５ｎｍ以下がさらに好
ましい。なお、本願発明に主として用いられるＬＥＤチ
ップの他、蛍光物質を励起させない或いは、励起されて
も蛍光物質から可視光などが実質的に発光されない光の
みを発光するＬＥＤチップを一緒に配置させることもで
きる。この場合、白色系と、赤色や黄色などが発光可能
な発光装置とすることもできる。In the case where white light is emitted in the light emitting device of the present invention, the main emission wavelength of the light emitting element is preferably 400 nm or more and 530 nm or less, more preferably 420 nm or more and 490 nm or less in consideration of the color complementary to the fluorescent substance. L
In order to further improve the efficiency of the ED chip and the efficiency of the fluorescent substance, respectively, the thickness is more preferably 450 nm or more and 475 nm or less. Note that, in addition to the LED chip mainly used in the present invention, an LED chip that does not excite a fluorescent substance or emits only light that does not substantially emit visible light or the like from the fluorescent substance even when excited may be disposed together. it can. In this case, a light emitting device capable of emitting white light, red light, yellow light, and the like can be provided.

【００３２】（マウント・リード１０４）マウント・リ
ード１０４は、ＬＥＤチップ１０３を配置させると共に
蛍光物質を収容させるカップとを有することが好まし
い。このようなカップを本願発明における開口部として
機能させることもできる。ＬＥＤチップを複数設置しマ
ウント・リードをＬＥＤチップの共通電極として利用す
る場合においては、十分な電気伝導性とボンディングワ
イヤー等との接続性を有することが好ましい。(Mount Lead 104) It is preferable that the mount lead 104 has a cup on which the LED chip 103 is arranged and a fluorescent substance is accommodated. Such a cup can also function as an opening in the present invention. When a plurality of LED chips are provided and the mount leads are used as a common electrode of the LED chips, it is preferable that the LED chips have sufficient electrical conductivity and connectivity with a bonding wire or the like.

【００３３】マウント・リードの具体的な電気抵抗とし
ては３００μΩｃｍ以下が好ましく、より好ましくは、
３μΩｃｍ以下である。また、マウント・リード上に複
数のＬＥＤチップを積置する場合は、ＬＥＤチップから
の発熱量が多くなるため熱伝導度がよいことが求められ
る。具体的には、０．０１ｃａｌ／ｃｍ2／ｃｍ／℃以
上が好ましくより好ましくは ０．５ｃａｌ／ｃｍ2／ｃ
ｍ／℃以上である。これらの条件を満たす材料として
は、鉄、銅、鉄入り銅、錫入り銅、メタライズパターン
付きセラミック等が挙げられる。The specific electrical resistance of the mount lead is preferably 300 μΩcm or less, more preferably,
It is 3 μΩcm or less. Also, when a plurality of LED chips are mounted on the mount leads, good heat conductivity is required because the amount of heat generated from the LED chips increases. Specifically, it is preferably at least 0.01 cal / cm 2 / cm / ° C., more preferably 0.5 cal / cm 2 / c
m / ° C. or more. Materials satisfying these conditions include iron, copper, copper with iron, copper with tin, and ceramics with metallized patterns.

【００３４】（インナー・リード１０５）インナー・リ
ード１０５としては、マウント・リード１０４上に配置
されたＬＥＤチップ１０３と接続された導電性ワイヤー
との接続を図るものである。マウント・リード上に複数
のＬＥＤチップを設けた場合は、各導電性ワイヤー同士
が接触しないよう配置できる構成とする必要がある。具
体的には、マウント・リードから離れるに従って、イン
ナー・リードのワイヤーボンディングさせる端面の面積
を大きくすることなどによってマウント・リードからよ
り離れたインナー・リードと接続させる導電性ワイヤー
の接触を防ぐことができる。導電性ワイヤーとの接続端
面の粗さは、密着性を考慮して１．６Ｓ以上１０Ｓ以下
が好ましい。(Inner Lead 105) The inner lead 105 is for connecting a conductive wire connected to the LED chip 103 disposed on the mount lead 104. In the case where a plurality of LED chips are provided on the mount lead, it is necessary to arrange the conductive wires so that the conductive wires do not contact each other. Specifically, as the distance from the mount lead increases, the area of the end face of the inner lead to which wire bonding is performed can be increased to prevent contact of the conductive wire connected to the inner lead further away from the mount lead. it can. The roughness of the connection end face with the conductive wire is preferably 1.6S or more and 10S or less in consideration of adhesion.

【００３５】インナー・リードの先端部を種々の形状に
形成させるためには、あらかじめリード・フレームの形
状を型枠で決めて打ち抜き形成させてもよく、或いは全
てのインナー・リードを形成させた後にインナー・リー
ド上部の一部を削ることによって形成させても良い。さ
らには、インナー・リードを打ち抜き形成後、端面方向
から加圧することにより所望の端面の面積と端面高さを
同時に形成させることもできる。In order to form the tips of the inner leads into various shapes, the shape of the lead frame may be determined in advance with a mold and punched out, or after all the inner leads have been formed, It may be formed by cutting a part of the upper part of the inner lead. Further, after the inner lead is punched and formed, a desired end face area and end face height can be simultaneously formed by pressing from the end face direction.

【００３６】インナー・リードは、導電性ワイヤーであ
るボンディングワイヤー等との接続性及び電気伝導性が
良いことが求められる。具体的な電気抵抗としては、３
００μΩｃｍ以下が好ましく、より好ましくは３μΩｃ
ｍ以下である。これらの条件を満たす材料としては、
鉄、銅、鉄入り銅、錫入り銅及び銅、金、銀をメッキし
たアルミニウム、鉄、銅等が挙げられる。The inner lead is required to have good connectivity with a conductive wire such as a bonding wire and good electrical conductivity. The specific electric resistance is 3
00 μΩcm or less, more preferably 3 μΩc
m or less. Materials meeting these conditions include:
Examples include iron, copper, copper with iron, copper with tin, and aluminum, iron, and copper plated with copper, gold, and silver.

【００３７】（電気的接続部材１０６）電気的接続部材
である導電性ワイヤー１０６などとしては、ＬＥＤチッ
プ１０３の電極とのオーミック性、機械的接続性、電気
伝導性及び熱伝導性がよいものが求められる。熱伝導度
としては０．０１ｃａｌ／ｃｍ2／ｃｍ／℃以上が好ま
しく、より好ましくは０．５ｃａｌ／ｃｍ2／ｃｍ／℃
以上である。また、作業性などを考慮して導電性ワイヤ
ーの場合、好ましくは、直径Φ１０μｍ以上、Φ４５μ
ｍ以下である。このような導電性ワイヤーとして具体的
には、金、銅、白金、アルミニウム等の金属及びそれら
の合金を用いた導電性ワイヤーが挙げられる。このよう
な導電性ワイヤーは、各ＬＥＤチップの電極と、インナ
ー・リード及びマウント・リードなどと、をワイヤーボ
ンディング機器によって容易に接続させることができ
る。(Electrical Connection Member 106) As the conductive wire 106 as an electrical connection member, one having good ohmic properties, mechanical connectivity, electrical conductivity, and thermal conductivity with the electrodes of the LED chip 103 is preferable. Desired. The thermal conductivity is preferably 0.01 cal / cm 2 / cm / ° C. or more, more preferably 0.5 cal / cm 2 / cm / ° C.
That is all. Further, in the case of a conductive wire in consideration of workability and the like, preferably, the diameter is Φ10 μm or more, and Φ45 μm.
m or less. Specific examples of such conductive wires include conductive wires using metals such as gold, copper, platinum, and aluminum and alloys thereof. Such a conductive wire can easily connect an electrode of each LED chip to an inner lead, a mount lead, and the like by a wire bonding device.

【００３８】（モールド部材１０７）モールド部材１０
７は、発光装置の使用用途に応じてＬＥＤチップ１０
３、導電性ワイヤー１０６、蛍光物質が含有されたコー
ティング部１０２などを外部から保護するために好適に
設けることができる。モールド部材１０７は、各種樹脂
や硝子などを用いて形成させることができる。モールド
部材を所望の形状にすることによってＬＥＤチップから
の発光を集束させたり拡散させたりするレンズ効果を持
たせることができる。従って、モールド部材は複数積層
した構造としてもよい。具体的には、凸レンズ形状、凹
レンズ形状さらには、発光観測面から見て楕円形状や円
形などそれらを複数組み合わせた物などが挙げられる。
また、ＬＥＤチップからの光を集光させレンズ形状を採
る場合においては、発光観測面側から見て発光面が拡大
されるため光源の色調むらが特に顕著に現れる。従っ
て、本願発明の色むら抑制の効果が特に大きくなるもの
である。(Mold member 107) Mold member 10
7 is an LED chip 10 according to the usage of the light emitting device.
3. The conductive wire 106, the coating portion 102 containing the fluorescent material, and the like can be suitably provided to protect the coating from the outside. The mold member 107 can be formed using various resins, glass, or the like. By forming the mold member into a desired shape, it is possible to have a lens effect of converging or diffusing light emitted from the LED chip. Therefore, a structure in which a plurality of mold members are stacked may be employed. Specifically, a convex lens shape, a concave lens shape, and a combination of a plurality of shapes such as an elliptical shape and a circular shape when viewed from the light emission observation surface are exemplified.
In the case where the light from the LED chip is condensed to form a lens, the light emitting surface is enlarged when viewed from the light emission observing surface side, so that the color tone unevenness of the light source is particularly noticeable. Therefore, the effect of suppressing color unevenness of the present invention is particularly large.

【００３９】モールド部材の具体的材料としては、主と
してエポキシ樹脂、ユリア樹脂、シリコーンなどの耐候
性に優れた透光性樹脂や硝子などが好適に用いられる。
また、モールド部材に拡散剤を含有させることによって
ＬＥＤチップからの指向性を緩和させ視野角を増やすこ
ともできる。拡散剤の具体的材料としては、チタン酸バ
リウム、酸化チタン、酸化アルミニウム、酸化珪素等が
好適に用いられる。さらに、モールド部材とコーティン
グ部とを異なる部材で形成させても良い。また、屈折率
を考慮してモールド部材とコーティング部とを同じ部材
を用いて形成させることもできる。As a specific material of the mold member, a translucent resin having excellent weather resistance, such as an epoxy resin, a urea resin, or silicone, or glass is preferably used.
Further, by including a diffusing agent in the mold member, the directivity from the LED chip can be reduced and the viewing angle can be increased. As a specific material of the diffusing agent, barium titanate, titanium oxide, aluminum oxide, silicon oxide, or the like is suitably used. Further, the mold member and the coating portion may be formed by different members. Further, the mold member and the coating portion can be formed using the same member in consideration of the refractive index.

【００４０】（基板４０４）ＬＥＤチップ４０３が多数
配置される高精細、高視野角及び小型薄型ＬＥＤ表示器
用の基板４０３としては、ＬＥＤチップ４０３及び電気
的接続部材などと蛍光物質を含有させる複数の凹状開口
部を設けた導体配線層を有するものが好適に挙げられ
る。このような基板においては、複数のＬＥＤチップを
直接同一基板上に高密度実装させるとＬＥＤチップから
の放熱量が多くなる。ＬＥＤチップからの熱を十分放熱
できず、また蛍光物質を樹脂中に均一に分散させなけれ
ばコーティング部の部分的な亀裂や着色などの劣化を生
じさせる場合もある。(Substrate 404) As a substrate 403 for a high-definition, high-viewing-angle, small-sized and thin LED display on which a large number of LED chips 403 are arranged, a plurality of LED chips 403 and electrical connection members and the like containing a fluorescent substance are provided. One having a conductor wiring layer provided with a concave opening is preferably mentioned. In such a substrate, when a plurality of LED chips are directly mounted on the same substrate at a high density, the amount of heat radiation from the LED chips increases. The heat from the LED chip cannot be sufficiently dissipated, and if the fluorescent substance is not uniformly dispersed in the resin, the coating may be partially degraded such as cracking or coloring.

【００４１】したがって、凹状開口部を設けた導体配線
層を有する基板としては、放熱性の優れ蛍光物質を含有
させたコーティング部などとの密着性が良いことが望ま
れる。このような凹状開口部を有する配線基板材料とし
ては、セラミックス基板、金属をベースにし絶縁層を介
して導体配線層を有する金属基板、熱伝導性フィラー入
り耐熱性有機樹脂基板が好適に挙げられる。これらの基
板は、凹状開口部と配線部層とを一体的に形成すること
が可能である。セラミックス基板では孔開き基板の積
層、金属基板ではプレス加工、有機樹脂基板では樹脂成
型により凹状開口部と配線部が一体化したＬＥＤ表示器
を簡易に形成させることができる。Therefore, it is desired that a substrate having a conductor wiring layer provided with a concave opening has excellent heat dissipation and good adhesion to a coating portion containing a fluorescent substance. Suitable examples of the wiring substrate material having such a concave opening include a ceramic substrate, a metal substrate having a conductive wiring layer based on a metal via an insulating layer, and a heat-resistant organic resin substrate containing a heat conductive filler. In these substrates, the concave opening and the wiring layer can be formed integrally. It is possible to easily form an LED display in which a concave opening and a wiring portion are integrated by laminating a perforated substrate on a ceramic substrate, press working on a metal substrate, and resin molding on an organic resin substrate.

【００４２】特に、放熱性や耐候性の点においてアルミ
ナを主としたセラミックス基板がより好ましい。具体的
には、原料粉末の９０〜９６重量％がアルミナであり、
焼結助剤として粘度、タルク、マグネシア、カルシア及
びシリカ等が４〜１０重量％添加され１５００から１７
００℃の温度範囲で焼結させたセラミックス基板、や原
料粉末の４０〜６０重量％がアルミナで焼結助剤として
６０〜４０重量％の硼珪酸硝子、コージュライト、フォ
ルステライト、ムライトなどが添加され８００〜１２０
０℃の温度範囲で焼結させたセラミックス基板等であ
る。In particular, a ceramic substrate mainly composed of alumina is more preferable in terms of heat dissipation and weather resistance. Specifically, 90 to 96% by weight of the raw material powder is alumina,
Viscosity, talc, magnesia, calcia, silica, etc. are added as sintering aids in an amount of 4 to 10% by weight, and 1500 to 17
A ceramic substrate sintered at a temperature of 00 ° C., and 40 to 60% by weight of the raw material powder are alumina, and 60 to 40% by weight of borosilicate glass, cordierite, forsterite, mullite, etc. are added as a sintering aid. 800-120
A ceramic substrate or the like sintered in a temperature range of 0 ° C.

【００４３】このような基板は、焼成前のグリーンシー
ト段階で種々の形状をとることができる。配線は、タン
グステンやモリブデンなど高融点金属を樹脂バインダー
に含有させたものを配線パターンとして、グリーンシー
ト上などで所望の形状にスクリーン印刷などさせること
によって構成させることができる。また、開口したグリ
ーンシートを多層に張り合わせることなどによりＬＥＤ
チップや蛍光物質を含有させる開口部をも自由に形成さ
せることができる。したがって、円筒状や孔径の異なる
グリ−ンシ−トを積層することで階段状の開口部側壁な
どを形成することも可能である。このようなグリーンシ
ートを焼結させることによってセラミックス基板が得ら
れる。また、それぞれを焼結させた後、接着させて用い
てもよい。Such a substrate can take various shapes at the green sheet stage before firing. The wiring can be formed by screen printing or the like into a desired shape on a green sheet or the like using a wiring pattern made of a resin binder containing a high melting point metal such as tungsten or molybdenum. In addition, LED is achieved by bonding open green sheets in multiple layers.
An opening for containing a chip and a fluorescent substance can also be freely formed. Therefore, it is also possible to form a stepped side wall of an opening by stacking green sheets having different cylindrical or hole diameters. By sintering such a green sheet, a ceramic substrate is obtained. Further, after sintering, they may be bonded and used.

【００４４】また、最表面のグリーンシートには、Ｃｒ
2Ｏ3、ＭｎＯ2、ＴｉＯ2、Ｆｅ2Ｏ3などをグリーンシー
ト自体に含有させることによって形成された基板表面だ
けを暗色系にさせることができる。このような最表面を
持った基板は、コントラストが向上しＬＥＤチップや蛍
光物質の発光をより目立たせることにもなる。開口部に
向かって広がった側壁は、更なる反射率を向上させるこ
とができる。凹状開口部の側壁形状は、ＬＥＤチップか
らの発光の損失を避けるために光学的に反射に適した直
線上のテ−パ−角ないしは曲面、又は階段状が挙げられ
る。また、凹状開口部の深さは第１のコーティング部と
なるスリラーや第２のコーティング部となる蛍光物質を
分散したスラリーが流れ出るのを防止すると共に、ＬＥ
Ｄチップからの直射光を遮蔽しない範囲での角度により
決められる。したがって、凹状開口部の深さは、０．３
ｍｍ以上が好ましく、０．５ｍｍ以上２．０ｍｍ以内が
より好ましい。The green sheet on the outermost surface includes Cr
By including 2 O 3 , MnO 2 , TiO 2 , Fe 2 O 3, etc. in the green sheet itself, only the substrate surface formed can be made to have a dark color. The substrate having such an outermost surface improves the contrast and makes the light emission of the LED chip and the fluorescent substance more conspicuous. The side wall extending toward the opening can further improve the reflectance. The shape of the side wall of the concave opening may be a taper angle or a curved surface on a straight line suitable for optical reflection so as to avoid loss of light emission from the LED chip, or a step shape. Further, the depth of the concave opening prevents the chiller serving as the first coating portion and the slurry in which the fluorescent material serving as the second coating portion is dispersed from flowing out, and also has the LE.
It is determined by the angle within a range that does not block direct light from the D chip. Therefore, the depth of the concave opening is 0.3
mm or more is preferable, and 0.5 mm or more and 2.0 mm or less is more preferable.

【００４５】基板の凹状開口部は、ＬＥＤチップ、電気
的接続部材や第１及び第２のコーティング部などを内部
に配置させるものである。したがって、ＬＥＤチップを
ダイボンド機器などで直接積載などすると共にＬＥＤチ
ップとの電気的接続をワイヤーボンディングなどで採れ
るだけの十分な大きさがあれば良い。凹状開口部は、所
望に応じて複数設けることができ、１６ｘ１６や２４ｘ
２４のドットマトリックスや直線状など種々選択させる
ことができる。凹状開口部のドットピッチが４ｍｍ以下
の高細密の場合には、砲弾型発光ダイオードランプを搭
載する場合と比較して大幅にドットピッチが縮小したも
のとすることができる。また、このような基板を用いた
ＬＥＤ表示器は、ＬＥＤチップからの放熱性に関連する
種々の問題を解決できる高密度ＬＥＤディスプレイ装置
とすることができる。ＬＥＤチップと基板底部との接着
は熱硬化性樹脂などによって行うことができる。具体的
には、エポキシ樹脂、アクリル樹脂やイミド樹脂などが
挙げられる。また、フェースダウンＬＥＤチップなどに
より基板に設けられた配線と接着させると共に電気的に
接続させるためにはＡｇペースト、ＩＴＯペースト、カ
ーボンペースト、金属バンプ等を用いることができる。The concave opening of the substrate is for disposing the LED chip, the electrical connection member, the first and second coating portions, and the like inside. Therefore, it is sufficient if the LED chip is large enough to be directly mounted on the die bonding device or the like and to be electrically connected to the LED chip by wire bonding or the like. A plurality of concave openings can be provided as desired, and 16x16 or 24x
Various selections such as 24 dot matrices and linear shapes can be made. When the dot pitch of the concave opening is 4 mm or less, the dot pitch can be significantly reduced as compared with the case where a shell type light emitting diode lamp is mounted. In addition, an LED display using such a substrate can be a high-density LED display device that can solve various problems related to heat dissipation from an LED chip. The bonding between the LED chip and the bottom of the substrate can be performed with a thermosetting resin or the like. Specifically, an epoxy resin, an acrylic resin, an imide resin, and the like can be given. In addition, an Ag paste, an ITO paste, a carbon paste, a metal bump, or the like can be used for bonding and electrically connecting a wiring provided on a substrate with a face-down LED chip or the like.

【００４６】また、基板上に形成された配線には、導電
率、ＬＥＤチップや蛍光物質が配される基板底部の反射
率などを向上させるために銀、金、銅、白金、パラジウ
ムやこれらの合金を蒸着やメッキ処理などを施して形成
させることもできる。The wiring formed on the substrate may be made of silver, gold, copper, platinum, palladium or the like in order to improve the conductivity, the reflectance of the bottom of the substrate on which the LED chip and the fluorescent substance are arranged, and the like. The alloy can also be formed by performing vapor deposition, plating, or the like.

【００４７】（ＬＥＤ表示装置）本願発明の発光装置を
用いたＬＥＤ表示器の一例を示す。本願発明において
は、白色系発光装置のみを用い白黒用のＬＥＤ表示装置
とすることもできる。白黒用のＬＥＤ表示器は、本願発
明の発光装置である発光ダイオードをマトリックス状な
どに配置したものや所望に応じて配置された複数の凹部
を有する基板上にＬＥＤチップ及びコーティング部を有
する構成することができる。各ＬＥＤチップを駆動させ
る駆動回路とＬＥＤ表示器とは、電気的に接続される。
駆動回路からの出力パルスによって種々の画像が表示可
能なデイスプレイ等とすることができる。駆動回路とし
ては、入力される表示データを一時的に記憶させるＲＡ
Ｍ（Ｒａｎｄｏｍ、Ａｃｃｅｓｓ、Ｍｅｍｏｒｙ）と、
ＲＡＭに記憶されるデータからＬＥＤ表示器を所定の明
るさに点灯させるための階調信号を演算する階調制御回
路と、階調制御回路の出力信号でスイッチングされて、
発光装置を点灯させるドライバーとを備える。階調制御
回路は、ＲＡＭに記憶されるデータから発光装置の点灯
時間を演算してパルス信号を出力する。(LED Display Device) An example of an LED display using the light emitting device of the present invention is shown. In the present invention, an LED display device for black and white can be formed by using only the white light emitting device. The black-and-white LED display is configured such that the light-emitting diodes, which are the light-emitting devices of the present invention, are arranged in a matrix or the like, or have an LED chip and a coating portion on a substrate having a plurality of concave portions arranged as desired. be able to. A drive circuit for driving each LED chip and the LED display are electrically connected.
A display or the like capable of displaying various images by an output pulse from the drive circuit can be provided. As a drive circuit, RA for temporarily storing input display data is used.
M (Random, Access, Memory),
A gradation control circuit for calculating a gradation signal for lighting the LED display to a predetermined brightness from the data stored in the RAM;
A driver for lighting the light emitting device. The gradation control circuit calculates a lighting time of the light emitting device from data stored in the RAM and outputs a pulse signal.

【００４８】このような、白黒用のＬＥＤ表示器はＲＧ
Ｂのフルカラー表示器と異なり当然回路構成を簡略化で
きると共に高精細化できる。そのため、ＲＧＢの発光装
置の特性に伴う色むらなどのないディスプレイとするこ
とができる。また、消費電力を３分の１程度に低減させ
ることができるため電池電源との接続の場合は、使用時
間を延ばすことができる。さらに、従来の赤色、緑色の
みを用いたＬＥＤ表示器に比べ人間に対する刺激が少な
く長時間の使用に適している。以下、本願発明の実施例
について説明するが、本願発明は具体的実施例のみに限
定されるものではないことは言うまでもない。Such an LED display for black and white is RG
Unlike the B full-color display, the circuit configuration can be simplified and the definition can be increased. Therefore, a display without color unevenness due to the characteristics of the RGB light emitting device can be provided. In addition, since the power consumption can be reduced to about one third, the use time can be extended in the case of connection with a battery power supply. Furthermore, compared to the conventional LED display using only red and green, it is less irritating to humans and is suitable for long-time use. Hereinafter, embodiments of the present invention will be described, but it goes without saying that the present invention is not limited to only specific embodiments.

【００４９】[0049]

【実施例】【Example】

（実施例１）主発光ピークが４６０ｎｍのＩｎ0.4Ｇａ
0.6Ｎ半導体を発光層としたＬＥＤチップを用いた。Ｌ
ＥＤチップは、洗浄させたサファイヤ基板上にＴＭＧ
（トリメチルガリウム）ガス、ＴＭＩ（トリメチルイン
ジュウム）ガス、窒素ガス及びドーパントガスをキャリ
アガスと共に流し、ＭＯＣＶＤ法で窒化ガリウム系化合
物半導体を成膜させることにより形成させた。ドーパン
トガスとしてＳｉＨ4とＣｐ2Ｍｇと、を切り替えること
によってＮ型導電性を有する窒化ガリウム系半導体とＰ
型導電性を有する窒化ガリウム系半導体とした。サファ
イア基板上には、バッファー層であるＧａＮを介して第
１のコンタクト層であるＮ型導電性を有するＧａＮ、発
光層であるＩｎＧａＮ、第１のクラッド層であるＰ型導
電性を有するＡｌＧａＮ、第２のコンタクト層であるＰ
型導電性を有するＧａＮをそれぞれ形成させてある。
（なお、Ｐ型半導体は、成膜後４００℃以上でアニール
させてある。また、発光層の厚みは、量子効果が生ずる
程度の３ｎｍとしてある。）(Example 1) the main emission peak of 460 nm an In 0.4 Ga
An LED chip using a 0.6 N semiconductor as a light emitting layer was used. L
The ED chip is TMG on a cleaned sapphire substrate.
A (trimethyl gallium) gas, a TMI (trimethyl indium) gas, a nitrogen gas and a dopant gas were flowed together with a carrier gas, and a gallium nitride-based compound semiconductor was formed by MOCVD. By switching between SiH 4 and Cp 2 Mg as a dopant gas, a gallium nitride based semiconductor having N-type conductivity and P
A gallium nitride based semiconductor having type conductivity was used. On a sapphire substrate, GaN having N-type conductivity as a first contact layer, InGaN as a light emitting layer, AlGaN having P-type conductivity as a first cladding layer, via GaN as a buffer layer; P which is the second contact layer
GaN having type conductivity is formed.
(Note that the P-type semiconductor is annealed at 400 ° C. or higher after film formation. The thickness of the light-emitting layer is set to 3 nm so that a quantum effect occurs.)

【００５０】エッチングによりＰＮ各半導体表面を露出
させた後、スパッタリング法により各電極をそれぞれ形
成させた。こうして出来上がった半導体ウエハーをスク
ライブラインを引いた後、外力により分割させ発光素子
として３５０μｍ角のＬＥＤチップを形成させた。After exposing the surface of each PN semiconductor by etching, each electrode was formed by sputtering. After a scribe line was drawn on the semiconductor wafer thus completed, the wafer was divided by external force to form LED chips of 350 μm square as light emitting elements.

【００５１】一方、銀メッキした銅製リードフレームを
打ち抜きにより形成させた。形成されたリードフレーム
は、マウント・リードの先端にカップを有する。カップ
には、ＬＥＤチップをＡｇが含有されたエポキシ樹脂で
ダイボンディングした。ＬＥＤチップの各電極とマウン
ト・リード及びインナー・リードと、をそれぞれ金線で
ワイヤーボンディングし電気的導通を取った。ＬＥＤチ
ップ上にシリコーンゴムをＬＥＤチップが積置されたカ
ップ上に注入した。注入後、１２５℃約１時間で硬化さ
せ第１のコーティング部を形成させた。On the other hand, a silver-plated copper lead frame was formed by punching. The formed lead frame has a cup at the tip of the mounting lead. The LED chip was die-bonded to the cup with an epoxy resin containing Ag. Each electrode of the LED chip, the mount lead and the inner lead were each wire-bonded with a gold wire to establish electrical continuity. Silicone rubber was injected onto the LED chip onto the cup on which the LED chip was placed. After the injection, the coating was cured at 125 ° C. for about 1 hour to form a first coating portion.

【００５２】蛍光物質は、Ｙ、Ｇｄ、Ｃｅの希土類元素
を化学量論比で酸に溶解した溶解液を蓚酸で共沈させ
た。これを焼成して得られる共沈酸化物と、酸化アルミ
ニウムと混合して混合原料を得る。これにフラックスと
してフッ化アンモニウムを混合して坩堝に詰め、空気中
１４００°Ｃの温度で３時間焼成して焼成品を得た。焼
成品を水中でボールミルして、洗浄、分離、乾燥、最後
に篩を通して形成させた。As a fluorescent substance, a solution obtained by dissolving rare earth elements of Y, Gd and Ce in an stoichiometric ratio in an acid was coprecipitated with oxalic acid. This is mixed with a coprecipitated oxide obtained by calcination and aluminum oxide to obtain a mixed raw material. This was mixed with ammonium fluoride as a flux, packed in a crucible, and fired in air at a temperature of 1400 ° C. for 3 hours to obtain a fired product. The calcined product was ball milled in water, washed, separated, dried, and finally formed through a sieve.

【００５３】形成された（Ｙ0.4Ｇｄ0.6）3Ａｌ5Ｏ12：
Ｃｅ蛍光体４０重量部、エポキシ樹脂１００重量部をよ
く混合してスラリーとさせた。このスラリーをマウント
・リードのカップ内である第１のコーティング部上に注
入させた。注入後、蛍光物質が含有された樹脂を１３０
℃約１時間で硬化させた。こうして図５（Ｂ）の如く、
第１のコーティング部上に厚さ約０．４ｍの蛍光物質が
含有された第２のコーティング部が形成させた。さら
に、ＬＥＤチップや蛍光物質を外部応力、水分及び塵芥
などから保護する目的でモールド部材として透光性エポ
キシ樹脂を形成させた。モールド部材は、砲弾型の型枠
の中に蛍光物質のコーティング部が形成されたリードフ
レームを挿入し透光性エポシキ樹脂を混入後、１５０℃
５時間にて硬化させた。こうして図１の如き発光装置で
ある発光ダイオードを形成させた。(Y 0.4 Gd 0.6 ) 3 Al 5 O 12 formed :
40 parts by weight of the Ce phosphor and 100 parts by weight of the epoxy resin were mixed well to form a slurry. The slurry was poured over the first coating in the cup of the mount lead. After the injection, the resin containing the fluorescent
Curing was performed at about 1 hour. Thus, as shown in FIG.
A second coating portion containing a phosphor having a thickness of about 0.4 m was formed on the first coating portion. Further, a translucent epoxy resin was formed as a mold member for the purpose of protecting the LED chip and the fluorescent substance from external stress, moisture, dust and the like. The mold member was inserted into a shell frame having a fluorescent material coated portion and mixed with a translucent epoxy resin.
Cured in 5 hours. Thus, a light emitting diode as a light emitting device as shown in FIG. 1 was formed.

【００５４】こうして得られた白色系が発光可能な発光
ダイオードの正面から色温度、演色性をそれぞれ測定し
た。色温度８０８０Ｋ、Ｒａ（演色性指数）＝８７．４
を示した。さらに、測定点を０度から１８０度まで４５
度づつ発光装置の中心上を通るように移動させ各地点に
おける色度点を測定した。また、Ｉｆ＝６０ｍＡ、Ｔａ
＝２５℃での寿命試験を行った。The color temperature and the color rendering were measured from the front of the light emitting diode capable of emitting white light, thus obtained. Color temperature 8080K, Ra (color rendering index) = 87.4
showed that. Furthermore, the measurement point is set to 45 degrees from 0 degrees to 180 degrees.
The light-emitting device was moved each time over the center of the light-emitting device, and the chromaticity points at each point were measured. Also, If = 60 mA, Ta
= 25 ° C.

【００５５】（比較例１）第１のコーティング部を形成
させず、第２のコーティング部のみを用いてコーティン
グ部を形成した以外は、実施例１と同様にして窒化ガリ
ウム系化合物半導体であるＬＥＤチップが配置されたカ
ップ内のみに蛍光物質として（Ｙ0.4Ｇｄ0.6）3Ａｌ5Ｏ
12：Ｃｅ蛍光体含有樹脂を注入し硬化させた。こうして
形成された発光ダイオードの色度点及び寿命試験結果を
実施例１と同様に測定した。測定結果を実施例１と共に
図６及び図７に示す。図７においては、実施例１を基準
にして表してある。Comparative Example 1 An LED made of a gallium nitride-based compound semiconductor was produced in the same manner as in Example 1, except that the first coated portion was not formed and the coating portion was formed using only the second coated portion. (Y 0.4 Gd 0.6 ) 3 Al 5 O is used as a fluorescent substance only in the cup where the chip is placed.
12 : Ce phosphor-containing resin was injected and cured. The chromaticity point and the life test result of the light emitting diode thus formed were measured in the same manner as in Example 1. The measurement results are shown in FIGS. In FIG. 7, the values are shown based on the first embodiment.

【００５６】（実施例２）ドットマトリクス状に凹状開
口部を有する配線基板としてセラミックス基板を使用し
た。凹状開口部はセラミックス基板製造時に配線層のな
い孔開きグリ−ンシ−トを積層することで形成させた。
１６×１６ドットマトリクスの凹状開口部のドットピッ
チを３．０ｍｍ、開口部径を２．０ｍｍφ、開口部深さ
を０．８ｍｍとした。全長は４８ｍｍ角の基板とした。
配線層は、タングステン含有バインダーを所望の形状に
スクリーン印刷させることにより形成させた。各グリー
ンシートは、重ね合わせて形成させてある。なお、表面
層にあたるグリーンシートには、基板のコントラスト向
上のために酸化クロムを含有させてある。これを焼結さ
せることによってセラミックス基板を構成させた。配線
層はドットマトリクスに対応したコモン、信号線を敷設
し表面はＮｉ／Ａｇメッキを施している。セラミックス
基板からの信号線の取り出しは、金属コバ−ルによる接
続ピンを銀ロウ接続により形成した。なお、階段状の開
口部径は、下層は１．７ｍｍφ、上層部開口部径は２．
３ｍｍφである。Example 2 A ceramic substrate was used as a wiring substrate having concave openings in a dot matrix. The concave opening was formed by laminating a perforated green sheet having no wiring layer during the production of the ceramic substrate.
The dot pitch of the concave opening of the 16 × 16 dot matrix was 3.0 mm, the diameter of the opening was 2.0 mmφ, and the depth of the opening was 0.8 mm. The total length was a 48 mm square substrate.
The wiring layer was formed by screen-printing a tungsten-containing binder into a desired shape. Each green sheet is formed by overlapping. In addition, the green sheet corresponding to the surface layer contains chromium oxide for improving the contrast of the substrate. This was sintered to form a ceramic substrate. Wiring layers are provided with common and signal lines corresponding to the dot matrix, and the surface is plated with Ni / Ag. To take out the signal line from the ceramic substrate, a connection pin made of a metal cover was formed by silver brazing. The diameter of the stepped opening is 1.7 mmφ in the lower layer, and the opening diameter in the upper layer is 2.
3 mmφ.

【００５７】一方、半導体発光素子であるＬＥＤチップ
として、主発光ピークが４５０ｎｍのＩｎ0.05Ｇａ0.95
Ｎ半導体を用いた。ＬＥＤチップは、洗浄させたサファ
イヤ基板上にＴＭＧ（トリメチルガリウム）ガス、ＴＭ
Ｉ（トリメチルインジュウム）ガス、窒素ガス及びドー
パントガスをキャリアガスと共に流し、ＭＯＣＶＤ法で
窒化ガリウム系化合物半導体を成膜させることにより形
成させた。ドーパントガスとしてＳｉＨ4とＣｐ2Ｍｇ
と、を切り替えることによってＮ型導電性を有する窒化
ガリウム半導体とＰ型導電性を有する窒化ガリウム半導
体を形成しＰＮ接合を形成させた。（なお、Ｐ型半導体
は、成膜後４００℃以上でアニールさせてある。）On the other hand, as an LED chip which is a semiconductor light emitting element, In 0.05 Ga 0.95 having a main emission peak of 450 nm is used.
An N semiconductor was used. The LED chip is made of TMG (trimethylgallium) gas, TM
An I (trimethyl indium) gas, a nitrogen gas and a dopant gas were flowed together with a carrier gas, and a gallium nitride-based compound semiconductor was formed by MOCVD. SiH 4 and Cp 2 Mg as dopant gas
The gallium nitride semiconductor having the N-type conductivity and the gallium nitride semiconductor having the P-type conductivity were formed by switching to form a PN junction. (Note that the P-type semiconductor is annealed at 400 ° C. or higher after film formation.)

【００５８】エッチングによりＰＮ各半導体表面を露出
させた後、スパッタリング法により各電極をそれぞれ形
成させた。こうして出来上がった半導体ウエハーをスク
ライブラインを引いた後、外力により分割させ発光素子
としてＬＥＤチップを形成させた。この青色系が発光可
能なＬＥＤチップをエポキシ樹脂で基板開口部内の所定
の場所にダイボンディング後、熱硬化により固定させ
た。その後２５μｍの金線をＬＥＤチップの各電極と、
基板上の配線とにワイヤ−ボンディングさせることによ
り電気的接続をとった。凹部内の下段には、第１のコー
ティング部としてシリコーン樹脂を注入させ１３０℃１
時間で硬化させた。第１のコーティング部の厚みは略
０．４ｍｍであった。After exposing the surface of each PN semiconductor by etching, each electrode was formed by sputtering. After a scribe line was drawn on the semiconductor wafer thus completed, the wafer was divided by external force to form LED chips as light emitting elements. The LED chip capable of emitting blue light was die-bonded to a predetermined location in the substrate opening with epoxy resin, and then fixed by thermosetting. After that, a 25 μm gold wire was connected to each electrode of the LED chip,
Electrical connection was made by wire-bonding to wiring on the substrate. Silicone resin was injected as a first coating portion in the lower stage in the concave portion at 130 ° C.
Cured in time. The thickness of the first coating was about 0.4 mm.

【００５９】また、蛍光物質は、Ｙ、Ｇｄ、Ｃｅの希土
類元素を化学量論比で酸に溶解した溶解液を蓚酸で共沈
させた。これを焼成して得られる共沈酸化物と、酸化ア
ルミニウムと、を混合させ混合原料を得る。これにフラ
ックスとしてフッ化アンモニウムを混合して坩堝に詰
め、空気中１４００°Ｃの温度で３時間焼成して焼成品
を得た。焼成品を水中でボールミルして、洗浄、分離、
乾燥、最後に篩を通して形成させた。形成された（Ｙ
0.5Ｇｄ0.5）3Ａｌ5Ｏ12：Ｃｅ蛍光物質１０重量部、シ
リコーン樹脂９０重量部をよく混合してスラリーとさせ
た。このスラリーを第１のコーティング部上の上段であ
る凹状開口部内にそれぞれ注入させた。注入後、蛍光物
質が含有された樹脂を１３０℃１時間で硬化させＬＥＤ
表示器を形成させた。第２のコーティング部の厚みは
０．４ｍｍであった。また、この時のＬＥＤ表示器の厚
みはセラミックス基板の厚み２．０ｍｍしかなく、砲弾
型ＬＥＤランプ使用のディスプレイ装置と比較して大幅
な薄型化が可能であった。As a fluorescent substance, a solution in which rare earth elements of Y, Gd and Ce were dissolved in an acid at a stoichiometric ratio was coprecipitated with oxalic acid. A co-precipitated oxide obtained by calcining this and aluminum oxide are mixed to obtain a mixed raw material. This was mixed with ammonium fluoride as a flux, packed in a crucible, and fired in air at a temperature of 1400 ° C. for 3 hours to obtain a fired product. Ball-mill the baked product in water, wash, separate,
Dried and finally formed through a sieve. Formed (Y
0.5 Gd 0.5 ) 3 Al 5 O 12 : Ce fluorescent substance 10 parts by weight and silicone resin 90 parts by weight were mixed well to form a slurry. The slurry was injected into each of the upper concave portions on the first coating portion. After the injection, the resin containing the fluorescent substance is cured at 130 ° C for 1 hour, and the LED is
An indicator was formed. The thickness of the second coating was 0.4 mm. In addition, the thickness of the LED display at this time was only 2.0 mm of the thickness of the ceramic substrate, and it was possible to significantly reduce the thickness as compared with a display device using a shell-type LED lamp.

【００６０】このＬＥＤ表示器と、入力される表示デー
タを一時的に記憶させるＲＡＭ（Ｒａｎｄｏｍ、Ａｃｃ
ｅｓｓ、Ｍｅｍｏｒｙ）及びＲＡＭに記憶されるデータ
から発光ダイオードを所定の明るさに点灯させるための
階調信号を演算する階調制御回路と階調制御回路の出力
信号でスイッチングされて発光ダイオードを点灯させる
ドライバーとを備えたＣＰＵの駆動手段と、を電気的に
接続させてＬＥＤ表示装置を構成した。ＬＥＤ表示器近
傍においても各開口部における色調むらは確認されなか
った。This LED display and a RAM (Random, Acc) for temporarily storing input display data
ess, memory) and data stored in the RAM, a gradation control circuit for calculating a gradation signal for lighting the light emitting diode to a predetermined brightness, and a light emitting diode which is switched by an output signal of the gradation control circuit to light the light emitting diode An LED display device was constructed by electrically connecting a CPU driving means having a driver for driving the CPU. Even in the vicinity of the LED display, color tone unevenness in each opening was not confirmed.

【００６１】[0061]

【発明の効果】本願発明の請求項１に記載の構成とする
ことにより、発光装置とすることによって、高視野角に
おいても混色に伴う色調むらが少なく、信頼性が高い発
光装置とすることができる。According to the structure of the first aspect of the present invention, the light emitting device can be a highly reliable light emitting device with less color tone unevenness due to color mixing even at a high viewing angle. it can.

【００６２】本願発明の請求項２記載の構成とすること
によって、より高輝度に信頼性の高い発光装置とするこ
とができる。By adopting the structure described in claim 2 of the present invention, a light emitting device with higher luminance and higher reliability can be obtained.

【００６３】本願発明の請求項３記載の構成とすること
によって、より混色に伴う色調むらが少ない発光装置と
することができる。By adopting the configuration according to claim 3 of the present invention, it is possible to provide a light emitting device with less color tone unevenness accompanying color mixing.

【００６４】本願発明の請求項４記載の構成とすること
によって、より安定した色調を有する発光装置とするこ
とができる。By adopting the structure described in claim 4 of the present invention, a light emitting device having a more stable color tone can be obtained.

【００６５】本願発明の請求項５記載の構成とすること
によって、より高細密且つ薄膜に形成可能であると共に
安定して発光可能な発光装置とすることができる。By adopting the structure described in claim 5 of the present invention, it is possible to obtain a light emitting device which can be formed into a finer and thinner film and can emit light stably.

【００６６】本願発明の請求項６記載の構成とすること
によって、高細密且つ薄膜に形成可能なＬＥＤ表示器と
することができる。According to the structure of the present invention, an LED display which can be formed into a high-density and thin film can be obtained.

【図面の簡単な説明】[Brief description of the drawings]

【図１】図１は、本願発明の発光装置を示した概略断面
図である。FIG. 1 is a schematic sectional view showing a light emitting device of the present invention.

【図２】図２は、本願発明の別の発光装置を示した概略
断面図である。FIG. 2 is a schematic sectional view showing another light emitting device of the present invention.

【図３】図３は、本願発明の発光装置を応用したＬＥＤ
表示器の概略模式図である。FIG. 3 is an LED to which the light emitting device of the present invention is applied;
It is a schematic diagram of a display.

【図４】図４は、図３のＡ−Ａ断面における部分的な模
式的断面図である。FIG. 4 is a partial schematic cross-sectional view taken along the line AA of FIG. 3;

【図５】図５は、本願発明の作用を説明するための模式
的断面図であり、図５（Ａ）は、比較のために示した発
光装置の断面図であり、図５（Ｂ）は、本願発明の模式
的断面図である。FIG. 5 is a schematic cross-sectional view for explaining the operation of the present invention, and FIG. 5A is a cross-sectional view of a light-emitting device shown for comparison, and FIG. FIG. 1 is a schematic sectional view of the present invention.

【図６】図６は、実施例１と比較例１の色調むらを表す
図面であって、図６（Ａ）が実施例１の色度座標を示
し、図６（Ｂ）が比較例１の色度座標を示す。FIGS. 6A and 6B are diagrams showing color tone unevenness of Example 1 and Comparative Example 1. FIG. 6A shows chromaticity coordinates of Example 1, and FIG. Shows the chromaticity coordinates of.

【図７】図７は、実施例１と比較例１の寿命試験結果を
表すグラフであって、実線が実施例１であり、破線が比
較例１を示す。FIG. 7 is a graph showing life test results of Example 1 and Comparative Example 1, wherein a solid line indicates Example 1 and a broken line indicates Comparative Example 1.

【符合の説明】[Description of sign]

１０１、２０１、４０１・・・第１のコーティング部 １０２、２０２、４０２・・・第２のコーティング部 １０３、２０３、４０３・・・ＬＥＤチップ １０４・・・マウント・リード １０５・・・インナー・リード １０６、２０６・・・電気的接続部材 １０７・・・モールド部材 ２０４・・・外部電極 ２０７・・・パッケージ ４０４・・・基板 ４０５・・・導体配線 101, 201, 401 ... first coating part 102, 202, 402 ... second coating part 103, 203, 403 ... LED chip 104 ... mount lead 105 ... inner lead 106, 206: Electrical connection member 107: Mold member 204: External electrode 207: Package 404: Substrate 405: Conductor wiring

フロントページの続き (56)参考文献 特開 平７−99345（ＪＰ，Ａ) 特開 平５−152609（ＪＰ，Ａ) 特開 昭49−122292（ＪＰ，Ａ) 特開 昭63−13254（ＪＰ，Ａ) 特開 昭61−158606（ＪＰ，Ａ) 実開 昭50−79379（ＪＰ，Ｕ) 実開 昭56−104787（ＪＰ，Ｕ) 実開 平４−107861（ＪＰ，Ｕ) 実開 平２−38757（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 33/00 Continuation of front page (56) References JP-A-7-99345 (JP, A) JP-A-5-152609 (JP, A) JP-A-49-122292 (JP, A) JP-A-63-13254 (JP) JP-A-61-158606 (JP, A) JP-A-50-79379 (JP, U) JP-A-56-104787 (JP, U) JP-A-4-107861 (JP, U) JP 2-38757 (JP, U) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 33/00

Claims (6)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】開口部底面においてＬＥＤチップを配置す
ると共に該開口部内にコーティング部を有する発光装置
であって、 前記コーティング部がＬＥＤチップ上の第１のコーティ
ング部と、第１のコーティング部上にＬＥＤチップから
の可視光によって励起され可視光を発光する蛍光物質が
含まれた第２のコーティング部と、を有することを特徴
とする発光装置。1. A light emitting device having an LED chip disposed on a bottom surface of an opening and having a coating portion in the opening, wherein the coating portion has a first coating portion on the LED chip and a coating portion on the first coating portion. A second coating portion containing a fluorescent substance that emits visible light when excited by visible light from the LED chip. 【請求項２】前記ＬＥＤチップが窒化物系化合物半導体
であると共に、前記蛍光物質がセリウムで付活されたイ
ットリウム・アルミニウム・ガーネット系蛍光物質であ
る請求項１記載の発光装置。2. The light emitting device according to claim 1, wherein said LED chip is a nitride-based compound semiconductor, and said fluorescent substance is a yttrium-aluminum-garnet-based fluorescent substance activated with cerium. 【請求項３】前記第１のコーティング部の表面が、発光
観測面側から見て窪んだ凹球面状である請求項１に記載
の発光装置。3. The light emitting device according to claim 1, wherein the surface of the first coating portion has a concave spherical shape as viewed from the light emission observation surface side. 【請求項４】前記開口部の側壁形状を階段状に形成し、
段ごとに第１のコ−ティング部及び第２のコーティング
部を有する請求項１に記載の発光装置。4. The side wall of the opening is formed in a step shape.
The light emitting device according to claim 1, further comprising a first coating portion and a second coating portion for each stage. 【請求項５】前記開口部を有する基板が、セラミック
ス、金属基板、熱伝導性フィラ−入り耐熱性有機樹脂基
板から選択される１つである請求項１に記載の発光装
置。5. The light emitting device according to claim 1, wherein the substrate having the opening is one selected from a ceramic, a metal substrate, and a heat-resistant organic resin substrate containing a heat conductive filler. 【請求項６】請求項５記載の開口部が同一基板に２以上
配置されると共に、該開口部内に配された導体配線と、
前記ＬＥＤチップとが電気的に接続されたことを特徴と
するＬＥＤ表示器。6. A circuit according to claim 5, wherein two or more openings are arranged on the same substrate, and a conductor wiring arranged in the openings.
An LED display, wherein the LED display is electrically connected to the LED chip.
JP8350253A 1996-12-27 1996-12-27 Light emitting device and LED display using the same Expired - Lifetime JP3065263B2 (en)

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