CN102157516B - Structure and manufacturing method of LED (light-emitting diode) protection diode - Google Patents
Structure and manufacturing method of LED (light-emitting diode) protection diode Download PDFInfo
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Abstract
The invention provides a manufacturing method and structure of LED (light-emitting diode) protection diode chips and a protection device with the protection diode chips. The method comprises the steps of N-type epitaxy on a P<+> substrate, oxidation of the N-type epitaxy surface, photoetching, P<+> boron diffusion of a P<+> window and the like. The device comprises a PNP triode, an NPN triode, an epitaxial resistor, a P/N<+> diode and a P/N epitaxial diode; the LED protection diode chips can be connected at the two sides of an LED device in parallel after being independently packaged or can be directly packaged and connected inside the LED device in parallel; when an LED lamp in the LED lamp string is damaged and causes open circuit, the P/N<+> diode inside the device breaks down, the PNP triode and the NPN triode are on and the current flows through the protection device, thus avoiding the situation that the whole string of lamps are not on; and when the voltage polarity of the LED lamp string is reversely connected, the inside P/N epitaxial diode is on, thus protecting the LED from failure due to reverse connection. The manufacturing method, the structure and the protection device have the following beneficial effects: the chips have a simple manufacturing process, are easy to produce and have a small area, high yield and low single cost; the flow is simple and convenient; and the protection device has the characteristics of simpleness and convenience in installation, low cost, strong generality and the like and can be widely used in various lighting lamps formed by connecting a plurality of LED bulbs in series.
Description
Technical field
The present invention relates to the manufacturing technology of LED protection diode, relate in particular to chip structure and the manufacture method thereof of the LED protection diode that is applied to many LED lamp series connection formations.
Background technology
LED (light-emitting diode) fluorescent tube has been widely used in lighting, stop-light, the electronic data display owing to having the advantages such as volume is little, lightweight, the life-span is long.After many LED lamp series connection of the most employings of LED illumination, display unit commonly used, mix suitable constant-flow driver and form at present.For the luminous branch road that many LED lamp series connection consist of, wherein a LED lamp damages and will cause whole branch road open circuit, and causes the LED lamp on the whole branch road to extinguish, and seriously also can damage other LED lamp with this branch circuit parallel connection.
Each discloses a kind of LED protective device CN1889804A and CN201114864Y patent application; two protective devices adopt respectively several separating components such as thyristor, voltage-stabiliser tube, resistance to form; complicated in the wiring of PVC version, occupied area is larger, and production cost is high.
Summary of the invention
The object of the invention is to solve the defects of prior art; provide a kind of LED protection chip manufacturing process simple; be easy to produce; simple flow; chip area is little, and rate of finished products is high, the low technical scheme of single chips cost; that is, provide a kind of LED protection diode chip for backlight unit technique manufacturing method, LED protection diode chip for backlight unit and protective device thereof.Described a kind of LED protection diode chip for backlight unit manufacture method comprises the steps:
Carry out the N-type extension on the step 1:P+ substrate;
Step 2: the N-type epitaxial surface is carried out oxidation;
Step 3: to the SiO of N-type epitaxial surface
2Layer carries out chemical wet etching, at SiO
2Layer forms P+ boron diffusion window;
Step 4: the P+ window is carried out the diffusion of P+ boron;
Step 5: the SiO that removes epitaxial surface
2
Step 6: the N-type epitaxial surface is carried out oxidation;
Step 7: the N-type epitaxial surface is carried out photoetching, form photoresist P window;
Step 8: to P window B Implanted;
Step 9: remove photoresist, P is injected window annealing, form the P district;
Step 10: the N-type epitaxial surface is carried out photoetching, form photoresist N+ window;
Step 11: the N+ window is injected arsenic;
Step 12: remove photoresist, to N-type epitaxial surface deposit SiO
2, inject after annealing, form the N+ district;
Step 13: to the SiO of N-type epitaxial surface
2Layer carries out chemical wet etching, at SiO
2Layer forms the hole window;
Step 14: at surface sputtering or evaporation aluminium;
Step 15: aluminium is carried out photoetching, etching, form the aluminium electrode;
Step 16: the deposit passivation layer, passivation layer is carried out photoetching, etching, form the pressure point window, metallized in the back side.
Another object of the present invention is to utilize above-mentioned method, and a kind of structure that can close with led chip the LED protection diode chip for backlight unit of envelope is provided.The structure of described a kind of LED protection diode chip for backlight unit forms:
The P+ substrate carries out the N-type extension at the P+ substrate, and the N-type epitaxial surface is carried out oxidation; SiO to the N-type epitaxial surface
2Layer carries out chemical wet etching, at SiO
2Layer forms P+ boron diffusion window; The P+ window is carried out the diffusion of P+ boron, remove the SiO of epitaxial surface
2, the N-type epitaxial surface is carried out oxidation; The N-type epitaxial surface is carried out photoetching, form photoresist P window; To P window B Implanted, remove photoresist, P is injected window annealing, form the P base; The N-type epitaxial surface is carried out photoetching, form photoresist N+ window; The N+ window is injected arsenic, remove photoresist, to N-type epitaxial surface deposit SiO
2, inject after annealing, form the N+ district; SiO to the N-type epitaxial surface
2Layer carries out chemical wet etching, at SiO
2Layer forms the hole window, at surface sputtering or evaporation aluminium; Aluminium is carried out photoetching, etching, form the aluminium electrode; The deposit passivation layer, passivation layer is carried out photoetching, etching, form the pressure point window, to the back side formation electrode that metallizes.
A kind of LED that utilizes above-mentioned LED to protect the structure of diode chip for backlight unit to consist of protects the protective device of diode, and this device comprises a PNP triode, a NPN triode, an epitaxial electric resistance, a P/N+ diode and a P/N epitaxial diode; Wherein the emitter e of PNP triode is connected with the negative pole of epitaxial electric resistance and P/N epitaxial diode by P+ boron diffusion region, surface metal AL, the base stage b of PNP triode is connected with the negative pole of the other end of epitaxial electric resistance and P/N+ diode, the collector electrode C of NPN triode, the base stage B of NPN triode is connected with the positive pole of P/N+ diode and the collector electrode c of PNP triode, and the emitter E of NPN triode is connected with the positive pole of P/N epitaxial diode and the collector electrode c of PNP triode; After this LED protection diode chip for backlight unit can encapsulate separately, be connected in parallel on the both sides of LED device during use, front metal aluminium electrode 1 end links to each other with the LED negative pole, and backplate 2 ends link to each other with LED is anodal, every LEDs LED protection in parallel diode; Also can directly encapsulate the inside that is connected in parallel on the LED device.When damaging open circuit for a certain in the LED lamp string, when voltage be higher than P/N+ diode breakdown voltage and PNP, NPN transistor base emitter forward voltage and the time, puncturing appears in inner P/N+ diode, PNP, NPN transistor base emitter forward current increase, PNP, the conducting of NPN triode, emitter current increases, and electric current flows into from the PNP transistor emitter, thereby avoids occurring the situation that a whole cluster of lamps, ornamental does not work from the outflow of NPN transistor emitter; And when the LED lamp string was pressed reversal connection, inner P/N epitaxial diode conducting, and the about 0.7V of conducting voltage be lower than the voltage of single LEDs, thereby protection LED can be owing to reversal connection was lost efficacy.
The invention has the beneficial effects as follows that LED protection chip manufacturing process of the present invention is simple, be easy to produce, simple flow, chip area is little, and rate of finished products is high, and single chips cost is low; LED protection chip of the present invention can also can encapsulate separately according to using needs directly to close the inside that envelope is connected in parallel on the LED device, is connected in parallel on the both sides of LED device during use, can satisfy different line applications demands; Compare with other LED protective device, protective device of the present invention has the characteristics such as simple installation, cost are low, highly versatile, and extensively model is used in the various lightings that are composed in series with a plurality of LED bulbs.
Description of drawings
Fig. 1 (a) carries out N-type extension schematic diagram on the P+ substrate;
Fig. 1 (b) carries out the oxidation schematic diagram to the N-type epitaxial surface;
Fig. 1 (c) is at SiO
2Layer forms P+ boron diffusion window schematic diagram;
Fig. 1 (d) carries out P+ boron diffusion schematic diagram to the P+ window;
Fig. 1 (e) is the SiO that removes epitaxial surface
2Schematic diagram;
Fig. 1 (f) is the schematic diagram that the N-type epitaxial surface is carried out oxidation;
Fig. 1 (g) is the schematic diagram that forms photoresist P window;
Fig. 1 (h) is the schematic diagram to P window B Implanted;
Fig. 1 (i) is the schematic diagram that forms the P district;
Fig. 1 (j) is the schematic diagram that forms photoresist N+ window;
Fig. 1 (k) is the schematic diagram that the N+ window is injected arsenic;
Fig. 1 (l) is the schematic diagram that forms the N+ district;
Fig. 1 (m) is at SiO
2Layer forms the schematic diagram of hole window;
Fig. 1 (n) is the schematic diagram at surface sputtering or evaporation aluminium;
Fig. 1 (o) is the schematic diagram that forms the aluminium electrode;
Fig. 1 (p) carries out metallized schematic diagram to the back side;
Fig. 2 (a) is the schematic diagram of LED protection diode chip for backlight unit cross-section structure;
Fig. 2 (b) is LED protection diode chip for backlight unit substitutional connection schematic diagram of the present invention;
Fig. 2 (c) is LED protection diode voltage current relationship curve chart;
Fig. 2 (d) is the schematic diagram in parallel with the LED device after the LED protection diode package of the present invention.
Embodiment
Below in conjunction with accompanying drawing a kind of LED protection diode chip for backlight unit technique manufacturing method of the present invention, LED protection diode chip for backlight unit and protective device thereof are further described.LED protection diode chip for backlight unit technique manufacturing method of the present invention comprises following concrete steps:
Step 1: resistivity is less than carrying out the N-type extension on the P of 0.02 Ω cm＜111〉substrate, epitaxial thickness 12～14um, and electrical resistivity of epitaxy 0.8～1 Ω cm is such as Fig. 1 (a);
Step 2: the N-type epitaxial surface is carried out oxidation, generate thickness 0.6～0.8um SiO
2, such as Fig. 1 (b);
Step 3: to the SiO of N-type epitaxial surface
2Layer carries out chemical wet etching, at SiO
2Layer forms P+ boron diffusion window, such as Fig. 1 (c);
Step 4: the P+ window is carried out the diffusion of P+ boron, P+ boron diffusion square resistance: 5～7 Ω/, junction depth: 10～11um is such as Fig. 1 (d);
Step 5: the SiO that removes epitaxial surface
2, such as Fig. 1 (e);
Step 6: the N-type epitaxial surface is carried out oxidation, generate thickness 0.02～0.04um SiO
2, such as Fig. 1 (f);
Step 7: the N-type epitaxial surface is carried out photoetching, form photoresist P window, such as Fig. 1 (g);
Step 8: the P window is injected 60keV 3.0E14cm-2 boron ion, such as Fig. 1 (h);
Step 10: the N-type epitaxial surface is carried out photoetching, form photoresist N+ window, such as Fig. 1 (j);
Step 11: the N+ window is injected 120keV 6.0E15cm-2 arsenic ion, such as Fig. 1 (k);
Step 12: remove photomask surface glue; To 720 ℃ of N-type epitaxial surfaces, LPCVD growth 0.5～0.6um SiO2; Inject rear 1050 ℃, 20 ' N2 annealing forms the N+ district, such as Fig. 1 (l);
Step 13: to the SiO of N-type epitaxial surface
2Layer carries out chemical wet etching, at SiO
2Layer forms the hole window, such as Fig. 1 (m);
Step 14: at surface sputtering or evaporate 1.5～3um aluminum metal, such as Fig. 1 (n);
Step 15: aluminium is carried out photoetching, etching, 430 ℃ of 30 ' N2 alloys, form aluminium electrode such as Fig. 1 (o);
Step 16: surface low-temperature deposit 0.8～1.2um passivation layer; Passivation layer is carried out photoetching, etching, form the pressure point window; Metallized in the back side, such as Fig. 1 (p).
Fig. 2 (a) is the schematic diagram of LED protection diode chip for backlight unit cross-section structure.Shown in Fig. 2 (a), represented a kind of structure that can close with led chip the LED protection diode chip for backlight unit of envelope.The structure of described a kind of LED protection diode chip for backlight unit forms:
The P+ substrate carries out the N-type extension at the P+ substrate, and the N-type epitaxial surface is carried out oxidation; SiO to the N-type epitaxial surface
2Layer carries out chemical wet etching, at SiO
2Layer forms P+ boron diffusion window; The P+ window is carried out the diffusion of P+ boron, remove the SiO of epitaxial surface
2, the N-type epitaxial surface is carried out oxidation; The N-type epitaxial surface is carried out photoetching, form photoresist P window; To P window B Implanted, remove photoresist, P is injected window annealing, form the P base; The N-type epitaxial surface is carried out photoetching, form photoresist N+ window; The N+ window is injected arsenic, remove photoresist, to N-type epitaxial surface deposit SiO
2, inject after annealing, form the N+ district; SiO to the N-type epitaxial surface
2Layer carries out chemical wet etching, at SiO
2Layer forms the hole window, at surface sputtering or evaporation aluminium; Aluminium is carried out photoetching, etching, form the aluminium electrode; The deposit passivation layer, passivation layer is carried out photoetching, etching, form the pressure point window, to the back side formation electrode that metallizes.
Fig. 2 (b) is LED protection diode chip for backlight unit substitutional connection schematic diagram of the present invention.Fig. 2 (d) is that LED protection diode of the present invention directly encapsulates the schematic diagram that is connected in parallel on the LED device inside.Shown in Fig. 2 (b), the PNP of Fig. 2 (b) is made of the P+ substrate among Fig. 2 (a), N extension, P base three parts; NPN is made of the N extension among Fig. 1, P base, emitter region N+ three parts; The P/N epitaxial diode is made of the N extension among Fig. 1, P base, edge-emission district N+ three parts; The P/N+ diode is made of the emitter region N+ among Fig. 1, P base two parts; Epitaxial electric resistance is made of emitter region N+ three parts at the edge-emission district N+ among Fig. 1, N extension, center.
This structure comprises a PNP triode, a NPN triode, an epitaxial electric resistance, a P/N+ diode and a P/N epitaxial diode; Wherein the emitter e of PNP triode is connected with the negative pole of epitaxial electric resistance and P/N epitaxial diode by P+ boron diffusion region, surface metal AL, the base stage b of PNP triode is connected with the negative pole of the other end of epitaxial electric resistance and P/N+ diode, the collector electrode C of NPN triode, the base stage B of NPN triode is connected with the positive pole of P/N+ diode and the collector electrode c of PNP triode, and the emitter E of NPN triode is connected with the positive pole of P/N epitaxial diode and the collector electrode c of PNP triode.
Fig. 2 (c) is LED protection diode voltage current relationship curve chart.Shown in Fig. 2 (d), after this LED protection diode chip for backlight unit can encapsulate separately, be connected in parallel on the both sides of LED device during use, front metal aluminium electrode 1 end links to each other with the LED negative pole, backplate 2 ends link to each other with LED is anodal, every LEDs LED protection in parallel diode; Also can directly encapsulate the inside that is connected in parallel on the LED device as required, front metal aluminium electrode 1 end links to each other with the LED negative pole, and backplate 2 ends link to each other with LED is anodal.When damaging open circuit for a certain in the LED lamp string, when voltage be higher than P/N+ diode breakdown voltage and PNP, NPN transistor base emitter forward voltage and the time, puncturing appears in inner P/N+ diode, PNP, NPN transistor base emitter forward current increase, PNP, the conducting of NPN triode, emitter current increases, and electric current flows into from the PNP transistor emitter, thereby avoids occurring the situation that a whole cluster of lamps, ornamental does not work from the outflow of NPN transistor emitter; And when the LED lamp string is pressed reversal connection; inner at first conducting of P/N epitaxial diode; and conducting voltage is 0.7V approximately; be lower than the voltage of single LEDs; thereby protection LED can be owing to reversal connection not be lost efficacy, and Fig. 2 (c) is that LED protection diode voltage current relationship curve chart can clearly illustrate that its protective value.
Be to be understood that to be, above-described embodiment is just to explanation of the present invention, rather than limitation of the present invention, does not anyly exceed the replacement of the unsubstantiality in the connotation scope of the present invention or the innovation and creation of modification all fall into protection range of the present invention.
Claims (12)
1. a LED protection diode chip for backlight unit manufacture method is characterized in that, described method comprises the steps:
Carry out the N-type extension on the step 1:P+ substrate;
Step 2: the N-type epitaxial surface is carried out oxidation;
Step 3: to the SiO of N-type epitaxial surface
2Layer carries out chemical wet etching, at SiO
2Layer forms P+ boron diffusion window;
Step 4: the P+ window is carried out the diffusion of P+ boron;
Step 5: the SiO that removes epitaxial surface
2
Step 6: the N-type epitaxial surface is carried out oxidation;
Step 7: the N-type epitaxial surface is carried out photoetching, form photoresist P window;
Step 8: to P window B Implanted;
Step 9: remove photoresist, P is injected window annealing, form the P district;
Step 10: the N-type epitaxial surface is carried out photoetching, form photoresist N+ window;
Step 11: the N+ window is injected arsenic;
Step 12: remove photoresist, to N-type epitaxial surface deposit SiO
2, inject after annealing, form the N+ district;
Step 13: to the SiO of N-type epitaxial surface
2Layer carries out chemical wet etching, at SiO
2Layer forms the hole window;
Step 14: at surface sputtering or evaporation aluminium;
Step 15: aluminium is carried out photoetching, etching, form the aluminium electrode;
Step 16: the deposit passivation layer, passivation layer is carried out photoetching, etching, form the pressure point window, metallized in the back side.
2. method according to claim 1 is characterized in that: described step 1 further is included in resistivity less than carrying out the N-type extension, epitaxial thickness 12～14um, electrical resistivity of epitaxy 0.8～1 Ω cm on the P of 0.02 Ω cm＜111〉substrate.
3. method according to claim 2 is characterized in that, described step 2 further comprises: oxidation generates thickness 0.6～0.8umSiO
2
4. method according to claim 3 is characterized in that, described step 4 comprises that further described P+ boron diffusion is P+ boron diffusion square resistance: 5～7 Ω/, junction depth: 10～11um.
5. method according to claim 4 is characterized in that, described step 6 comprises that further described oxidation generates thickness 0.02～0.04um SiO
2
6. method according to claim 5 is characterized in that, described step 8 further comprises injects 60keV 3.0E14cm
-2The boron ion.
7. method according to claim 6 is characterized in that, described step 11 further comprises injects 120keV 6.0E15cm
-2Arsenic ion.
8. method according to claim 7 is characterized in that, described step 12 further comprises 720 ℃ of N-type epitaxial surfaces, LPCVD growth 0.5～0.6um SiO
2Inject rear 1050 ℃, 20 ' N2 annealing forms the N+ district.
9. method according to claim 8, it is characterized in that: described step 14 comprises that further described aluminium is 1.5～3um aluminum metal.
10. method according to claim 9 is characterized in that, described step 16 comprises that further described passivation layer is surface low-temperature deposit 0.8～1.2um passivation layer.
11. the structure of a LED protection diode chip for backlight unit is characterized in that, its formation is: the P+ substrate, carry out the N-type extension at the P+ substrate, and the N-type epitaxial surface carried out oxidation; SiO to the N-type epitaxial surface
2Layer carries out chemical wet etching, at SiO
2Layer forms P+ boron diffusion window; The P+ window is carried out the diffusion of P+ boron, remove the SiO of epitaxial surface
2, the N-type epitaxial surface is carried out oxidation; The N-type epitaxial surface is carried out photoetching, form photoresist P window; To P window B Implanted, remove photoresist, P is injected window annealing, form the P base; The N-type epitaxial surface is carried out photoetching, form photoresist N+ window; The N+ window is injected arsenic, remove photoresist, to N-type epitaxial surface deposit SiO
2, inject after annealing, form the N+ district; SiO to the N-type epitaxial surface
2Layer carries out chemical wet etching, at SiO
2Layer forms the hole window, at surface sputtering or evaporation aluminium; Aluminium is carried out photoetching, etching, form the aluminium electrode; The deposit passivation layer, passivation layer is carried out photoetching, etching, form the pressure point window, metallized in the back side, form backplate.
12. the protective device of a LED protection diode is characterized in that this device comprises a PNP triode, a NPN triode, an epitaxial electric resistance, a P/N+ diode and a P/N epitaxial diode; Wherein the emitter e of PNP triode is connected with the negative pole of epitaxial electric resistance and P/N epitaxial diode by P+ boron diffusion region, surface metal AL, the base stage b of PNP triode is connected with the negative pole of the other end of epitaxial electric resistance and P/N+ diode, the collector electrode C of NPN triode, the base stage B of NPN triode is connected with the positive pole of P/N+ diode and the collector electrode c of PNP triode, and the emitter E of NPN triode is connected with the positive pole of P/N epitaxial diode and the collector electrode c of PNP triode; After this LED protection diode chip for backlight unit encapsulates separately, be connected in parallel on the both sides of LED device during use, front metal aluminium electrode 1 end links to each other with the LED negative pole, and backplate 2 ends link to each other with LED is anodal, every LEDs LED protection in parallel diode; Perhaps directly encapsulate the inside that is connected in parallel on the LED device; When damaging open circuit for a certain in the LED lamp string, when voltage be higher than P/N+ diode breakdown voltage and PNP, NPN transistor base emitter forward voltage and the time, puncturing appears in inner P/N+ diode, PNP, NPN transistor base emitter forward current increase, PNP, the conducting of NPN triode, emitter current increases, and electric current flows into from the PNP transistor emitter, thereby avoids occurring the situation that a whole cluster of lamps, ornamental does not work from the outflow of NPN transistor emitter; And when the LED lamp string was pressed reversal connection, inner P/N epitaxial diode conducting, and the about 0.7V of conducting voltage be lower than the voltage of single LEDs, thereby protection LED can be owing to reversal connection was lost efficacy.
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| CN102437155B (en) * | 2011-12-09 | 2013-07-10 | 杭州士兰集成电路有限公司 | High working voltage light emitting diode (LED) protection diode and structure thereof and corresponding manufacturing method |
| CN102496619B (en) * | 2011-12-26 | 2014-09-10 | 天津中环半导体股份有限公司 | Protector chip of light emitting diode and production technology thereof |
| CN106711234B (en) * | 2017-01-16 | 2019-09-06 | 重庆平伟实业股份有限公司 | A kind of high-frequency absorption diode chip for backlight unit and its production method |
| CN108461489A (en) * | 2018-01-24 | 2018-08-28 | 上海芯石半导体股份有限公司 | A kind of Ultrahigh speed data interface ESD protection chip and its manufacturing method |
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|---|---|---|---|---|
| US5032534A (en) * | 1988-09-09 | 1991-07-16 | Sgs-Thomson Microelectronics S.A. | Process for manufacturing a regulation and protection diode |
| US5338964A (en) * | 1992-03-26 | 1994-08-16 | Sgs-Thomson Microelectronics S.A. | Integrated circuit comprising a protection diode array |
| CN101527304A (en) * | 2008-12-08 | 2009-09-09 | 上海长园维安微电子有限公司 | Integrated low-voltage and low-capacitance TVS device and manufacturing method thereof |
| CN101778502A (en) * | 2009-12-25 | 2010-07-14 | 安徽问天量子科技股份有限公司 | Light-emitting diode open-circuit-protection application specific integrated circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3059906B2 (en) * | 1995-01-31 | 2000-07-04 | 三洋電機株式会社 | Semiconductor integrated circuit |
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2010
- 2010-12-20 CN CN 201010606104 patent/CN102157516B/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5032534A (en) * | 1988-09-09 | 1991-07-16 | Sgs-Thomson Microelectronics S.A. | Process for manufacturing a regulation and protection diode |
| US5338964A (en) * | 1992-03-26 | 1994-08-16 | Sgs-Thomson Microelectronics S.A. | Integrated circuit comprising a protection diode array |
| CN101527304A (en) * | 2008-12-08 | 2009-09-09 | 上海长园维安微电子有限公司 | Integrated low-voltage and low-capacitance TVS device and manufacturing method thereof |
| CN101778502A (en) * | 2009-12-25 | 2010-07-14 | 安徽问天量子科技股份有限公司 | Light-emitting diode open-circuit-protection application specific integrated circuit |
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