CN202585527U - Packaging structure of novel green light LED - Google Patents

Packaging structure of novel green light LED Download PDF

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Publication number
CN202585527U
CN202585527U CN 201220158336 CN201220158336U CN202585527U CN 202585527 U CN202585527 U CN 202585527U CN 201220158336 CN201220158336 CN 201220158336 CN 201220158336 U CN201220158336 U CN 201220158336U CN 202585527 U CN202585527 U CN 202585527U
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CN
China
Prior art keywords
light led
green light
led wafer
packaging structure
green
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN 201220158336
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Chinese (zh)
Inventor
袁红宇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Chaosi Semiconductor Co ltd
Original Assignee
SUZHOU JOINTEC CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SUZHOU JOINTEC CO Ltd filed Critical SUZHOU JOINTEC CO Ltd
Priority to CN 201220158336 priority Critical patent/CN202585527U/en
Application granted granted Critical
Publication of CN202585527U publication Critical patent/CN202585527U/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

The utility model discloses a packaging structure of a novel green light LED. The packaging structure comprises an LED wafer and is characterized in that: the LED wafer is a blue light LED wafer and is provided with a green phosphor powder layer, and the green phosphor powder layer is formed by bonding green phosphor powder to the blue light LED wafer. According to the packaging structure, the packaging of a green light LED is realized, and the packaging structure has the advantages that: by employing the packaging structure, the brightness of the green light LED is 10% higher than the brightness of a green light LED wafer which is directly used.

Description

A kind of encapsulating structure of novel green light LED
Technical field
The utility model relates to light-emitting diode, and (Light Emitting Diode, LED) field relate to a kind of encapsulating structure of novel green light LED particularly.
Background technology
LED (Light Emitting Diode) light-emitting diode is to convert electric energy the device of luminous energy to through semiconductor PN, and it is widely used in fields such as display screen, traffic signal display light source, lamps for vehicle, LED-backlit source, lighting source gradually.At present, in order to obtain green light LED, it is the green light LED wafer of 500 ~ 530nm that its encapsulating structure mainly adopts wavelength, but the LED brightness of adopting this encapsulating structure to obtain is lower.
The utility model content
The purpose of the utility model is to provide a kind of green light LED encapsulating structure that has high brightness, is easy to realize.
For addressing the above problem, the technical scheme that the utility model adopted is:
As a kind of improvement, a kind of encapsulating structure of novel green light LED comprises the LED wafer, it is characterized in that: the LED wafer is the blue-ray LED wafer, and said LED wafer is provided with green phosphor layer.
Say further:
The encapsulating structure of described a kind of novel green light LED is characterized in that: said green phosphor layer is that green emitting phosphor is cemented on the said blue led wafer.
Owing to adopted technique scheme; Compared with prior art; The encapsulating structure of the utility model comprises the LED wafer, and described LED wafer is the blue-ray LED wafer, and said LED wafer is provided with green phosphor layer; Said green phosphor layer is that green emitting phosphor is cemented on the said blue led wafer, makes the brightness ratio of green light LED directly use the brightness of green light LED wafer to exceed 10% like this.
Description of drawings
Fig. 1, the structural representation of a kind of embodiment of the utility model.
Among the figure, 1 – spun gold, 2 – bonded adhesivess, 3 – LED wafers, 4 – silica gel, 5-green emitting phosphor, 6 – supports.
Embodiment
The utility model is explained further details with embodiment below in conjunction with accompanying drawing:
As shown in Figure 1, a kind of encapsulating structure of novel green light LED, it mainly comprises 6, support; Adopt the higher metallic support of conductive coefficient,, blue-ray LED wafer 3 is adhered to support 6, pass through gluing process then through bonded adhesives 2; Green emitting phosphor is placed on the LED wafer,, spun gold 1 is connected the positive and negative electrode of LED wafer and metallic support again through bonding technology; Completion is electrically connected, and covers LED wafer and contact conductor with silica gel 4 at last, forms packaging protection and optical channel.
Adopt this embodiment, substitute the green light LED wafer, be used green emitting phosphor again, like this, make the brightness ratio of green light LED directly use the brightness of green light LED wafer to exceed 10% with the blue-ray LED wafer.
The above is the embodiment of the utility model; Only in order to the explanation the utility model and and the described technical scheme of unrestricted the utility model, therefore, should be understood that; For those skilled in the art; Under the prerequisite that does not break away from the utility model, can also make some improvement and retouching, these improvement and retouching also are regarded as the protection range of the utility model.

Claims (2)

1. the encapsulating structure of a novel green light LED comprises LED wafer (3), it is characterized in that: LED wafer (3) is the blue-ray LED wafer, and said LED wafer is provided with green phosphor layer.
2. the encapsulating structure of a kind of novel green light LED according to claim 1, it is characterized in that: said green phosphor layer is that green emitting phosphor (5) is cemented on the said blue led wafer (3).
CN 201220158336 2012-04-16 2012-04-16 Packaging structure of novel green light LED Expired - Lifetime CN202585527U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201220158336 CN202585527U (en) 2012-04-16 2012-04-16 Packaging structure of novel green light LED

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201220158336 CN202585527U (en) 2012-04-16 2012-04-16 Packaging structure of novel green light LED

Publications (1)

Publication Number Publication Date
CN202585527U true CN202585527U (en) 2012-12-05

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201220158336 Expired - Lifetime CN202585527U (en) 2012-04-16 2012-04-16 Packaging structure of novel green light LED

Country Status (1)

Country Link
CN (1) CN202585527U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103236484A (en) * 2013-04-15 2013-08-07 江苏稳润光电有限公司 Method for manufacturing back lighting LED of dashboard of automobile
CN103366645A (en) * 2013-03-22 2013-10-23 美的集团武汉制冷设备有限公司 Light emitting display device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103366645A (en) * 2013-03-22 2013-10-23 美的集团武汉制冷设备有限公司 Light emitting display device
CN103236484A (en) * 2013-04-15 2013-08-07 江苏稳润光电有限公司 Method for manufacturing back lighting LED of dashboard of automobile

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20161228

Address after: 200000 Shanghai city Songjiang District Yang Shi Road No. 88

Patentee after: Shanghai Advanced Silicon Technology Co., Ltd.

Address before: Suzhou City, Jiangsu province 215000 Suzhou Industrial Park Loufeng town Fu Road No. 45 Venture Industrial District No. 9 factory

Patentee before: Suzhou Jointec Co., Ltd.

CP01 Change in the name or title of a patent holder

Address after: 200000 No. 88, Yangshi Road, Songjiang District, Shanghai

Patentee after: Shanghai Chaosi Semiconductor Co.,Ltd.

Address before: 200000 No. 88, Yangshi Road, Songjiang District, Shanghai

Patentee before: SHANGHAI ADVANCED SILICON TECHNOLOGY Co.,Ltd.

CP01 Change in the name or title of a patent holder
CX01 Expiry of patent term

Granted publication date: 20121205

CX01 Expiry of patent term