CN204680688U - A kind of LED encapsulation structure - Google Patents
A kind of LED encapsulation structure Download PDFInfo
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- CN204680688U CN204680688U CN201520209479.XU CN201520209479U CN204680688U CN 204680688 U CN204680688 U CN 204680688U CN 201520209479 U CN201520209479 U CN 201520209479U CN 204680688 U CN204680688 U CN 204680688U
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- led chip
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- base plate
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Abstract
The utility model discloses a kind of LED encapsulation structure, comprise support, intrinsic LED chip on support, it is characterized in that, the low-expansion base plate of one deck is had between support and LED chip, this base plate is provided with the conductive hole corresponding with LED chip electrode position, realizes the electrical connection of LED chip and support.The utility model by adding the low-expansion base plate of one deck between LED chip and support, effectively improve improve thermal coefficient of expansion between LED chip and support seriously do not mate with problem, extend the useful life of LED.
Description
Technical field
The utility model relates to semiconductor light-emitting-diode field, particularly a kind of LED encapsulation structure.
Background technology
LED chip is by adding forward current on PN junction, free electron and hole-recombination and luminous, direct is luminous energy by electric energy conversion, it is widely used as a kind of new lighting source material, it has the advantages such as reaction speed is fast, shock resistance good, the life-span is long, energy-conserving and environment-protective and fast-developing, has been widely used in the field such as beautification of landscape and indoor and outdoor lighting at present.
Existing LED chip has three kinds of structures: positive cartridge chip, flip-chip and vertical chip.Wherein flip-chip and vertical chip are because having good heat-sinking capability and higher light extraction efficiency and being widely used.And the conventional package technique of flip-chip and vertical chip is all be fixed on support by the mode that chip is directly welded by eutectic, but because the thermal coefficient of expansion of GaN material in LED chip and non-ceramic support differs greatly, so easily make LED chip crack in the long use procedure of LED component, LED component is finally caused to lose efficacy.Therefore, be necessary to provide a kind of new LED encapsulation structure and manufacture method to solve the problems referred to above.
Summary of the invention
For the deficiencies in the prior art, the purpose of this utility model is to provide a kind of LED encapsulation structure, this structure can effectively improve thermal coefficient of expansion between LED chip and support seriously do not mate with problem, extend the useful life of LED.
To achieve these goals, the utility model provides a kind of LED encapsulation structure, comprise support, intrinsic LED chip on support, it is characterized in that, between support and LED chip, have the low-expansion base plate of one deck, this base plate is provided with the conductive hole corresponding with LED chip electrode position, realizes the electrical connection of LED chip and support.
Preferably, the coefficient of expansion of described base plate is between the coefficient of expansion and the coefficient of expansion of support of GaN material.
Preferably, the coefficient of expansion of described base plate is 2 ~ 8PPM.
The utility model by adding the low-expansion base plate of one deck between LED chip and support, effectively improve improve thermal coefficient of expansion between LED chip and support seriously do not mate with problem, extend the useful life of LED.
Accompanying drawing explanation
Fig. 1 is a kind of LED encapsulation structure schematic diagram of the present invention.
Embodiment
In order to make technical problem solved by the invention, technical scheme and beneficial effect clearly understand, below in conjunction with accompanying drawing, the present invention is described in further detail.
Embodiment
Be 2 ~ 8PPM by low-expansion for one deck base plate 2(coefficient of expansion) adopt elargol or tin cream to be fixed on support 1, base plate 2 is provided with the conductive hole 5 corresponding with electrode 4 position of LED flip chip 3 above, LED flip chip 3 is welded on this base plate 2 by tin cream or Sillim, realize the electrical connection of LED flip chip 3 and support 1, as shown in Figure 1, rearmost point fluorescent glue forms white light LEDs.
The above; be only the embodiment in the utility model; but protection range of the present utility model is not limited thereto; in the technical scope that any people being familiar with this technology is disclosed in the utility model, the conversion that can expect easily or replace all should be encompassed within protection range of the present utility model.Therefore, protection range of the present utility model should be as the criterion with the protection range of claims.
Claims (3)
1. a LED encapsulation structure, comprises support, intrinsic LED chip on support, it is characterized in that, between support and LED chip, have the low-expansion base plate of one deck, this base plate is provided with the conductive hole corresponding with LED chip electrode position, realizes the electrical connection of LED chip and support.
2. a kind of LED encapsulation structure according to claim 1, is characterized in that the coefficient of expansion of described base plate is between the coefficient of expansion and the coefficient of expansion of support of GaN material.
3. a kind of LED encapsulation structure according to claim 2, is characterized in that the coefficient of expansion of described base plate is 2 ~ 8PPM.
Priority Applications (1)
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CN201520209479.XU CN204680688U (en) | 2015-04-09 | 2015-04-09 | A kind of LED encapsulation structure |
Applications Claiming Priority (1)
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CN201520209479.XU CN204680688U (en) | 2015-04-09 | 2015-04-09 | A kind of LED encapsulation structure |
Publications (1)
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CN204680688U true CN204680688U (en) | 2015-09-30 |
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CN201520209479.XU Active CN204680688U (en) | 2015-04-09 | 2015-04-09 | A kind of LED encapsulation structure |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106159058A (en) * | 2015-04-09 | 2016-11-23 | 江西省晶瑞光电有限公司 | A kind of LED encapsulation structure and preparation method thereof |
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2015
- 2015-04-09 CN CN201520209479.XU patent/CN204680688U/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106159058A (en) * | 2015-04-09 | 2016-11-23 | 江西省晶瑞光电有限公司 | A kind of LED encapsulation structure and preparation method thereof |
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CP01 | Change in the name or title of a patent holder |
Address after: 330096, No. 699 AI Sihu Road, Nanchang hi tech Development Zone, Jiangxi, China Patentee after: JIANGXI LATTICEPOWER SEMICONDUCTOR Corp. Address before: 330096, No. 699 AI Sihu Road, Nanchang hi tech Development Zone, Jiangxi, China Patentee before: JIANGXI LATTICEBRIGHT Corp. |