CN104465924A - LED chip based on double-interface spherical-cap-shaped graph structures - Google Patents
LED chip based on double-interface spherical-cap-shaped graph structures Download PDFInfo
- Publication number
- CN104465924A CN104465924A CN201410651279.XA CN201410651279A CN104465924A CN 104465924 A CN104465924 A CN 104465924A CN 201410651279 A CN201410651279 A CN 201410651279A CN 104465924 A CN104465924 A CN 104465924A
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- Prior art keywords
- led chip
- spherical
- layer
- graphic structure
- sapphire
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
Abstract
The invention discloses an LED chip based on double-interface spherical-cap-shaped graph structures. The LED chip is structurally composed of a sapphire layer (3), an N-type gallium nitride layer (4), an active layer (5), a P-type gallium nitride layer (6) and a metal reflective film layer (7) sequentially from top to bottom. The LED chip is characterized in that the two surfaces of the sapphire layer (3) are each provided with one spherical-cap-shaped graph structure. Compared with the prior art, the cooling efficiency of the LED chip is improved, and meanwhile the light extraction efficiency of the LED chip can be improved.
Description
Technical field
The present invention relates to the graphic structure of the substrate surface of LED chip, particular by the specific graphic structure that the substrate surface at LED chip is produced, improve the light extraction efficiency of LED chip.
Background technology
When making LED chip, the problem that needs solve is: obtain higher light extraction efficiency.
Application number is the Chinese invention patent of 201110102031.4, disclose a kind of patterned substrate structure, utilize dissimilar materials manufacturing cycle figure, this material possesses the feature of high temperature resistance, can not decompose during high growth temperature more than 800 degree, can exist with the form of single crystal material.This invention comprises the Sapphire Substrate of bottom and the periodization figure of sapphire substrate surface, and described periodic pattern is made up of dissimilar materials completely; Or described periodic pattern is made up of dissimilar materials and sapphire layering according to a certain percentage, and figure top is dissimilar materials, and the bottom of figure is sapphire.By this patterned substrate structure, light extraction efficiency can be improved, but it still awaits further raising.
Summary of the invention
The present invention is directed to deficiency of the prior art, a kind of LED chip based on two interfaces ball crown type graphic structure is provided, thus significantly improves the light extraction efficiency of LED chip.
Technical scheme of the present invention is:
Based on the LED chip of two interfaces ball crown type graphic structure, its structure is followed successively by from top to bottom: sapphire layer, n type gallium nitride layer, active layer, P type gallium nitride layer and metallic reflection rete, is characterized in that: two surfaces of sapphire layer are provided with ball crown type graphic structure.
Further, two of sapphire layer surperficial ball crown type graphic structures are concave surface.
Further, the span of the spacing d between ball crown type graphic structure is 0.1 μm≤d≤3 μm.
Further, in ball crown type graphic structure, the span of the radius r of spherical crown is d<r<4d, and the span of spherical crown degree of depth D is 0.5r≤D≤r.
Compared with prior art, tool has the following advantages and beneficial effect in the present invention:
(1) the present invention to Sapphire Substrate layer up and down two surface make recessed spherical figure time, from heat radiation angle, increase area of dissipation, therefore improve radiating efficiency.
(2) when structure of the present invention is used for sapphire substrate LED chip, the refractive index of Sapphire Substrate is minimum, with sapphire interface as exiting surface, the light extraction efficiency of LED chip can be improved, decrease the increase of heat energy and the rising of temperature that cause due to the loss at total reflection of light in chip.
Accompanying drawing explanation
Fig. 1 is the structural representation of LED chip of the present invention, in figure, and 1: the upper surface of sapphire layer, 2: the lower surface of sapphire layer, 3: sapphire layer, 4:N type gallium nitride layers, 5: active layer, 6:P type gallium nitride layers, 7: metallic reflection rete.
Fig. 2 is spherical graphic structure schematic diagram.
Fig. 3 is the contrast of radius of spherical crown and degree of depth light extraction efficiency when being 3 μm.
Fig. 4 is spherical crown spacing when being respectively 0.2 μm, 0.5 μm, 0.8 μm and 1.2 μm, in different radius of spherical crown situation (the spherical crown degree of depth=radius of spherical crown), and the contrast of LED chip light extraction efficiency.
Fig. 5 is spherical crown spacing is 0.5 μm, when radius of spherical crown is respectively 0.5 μm, 1.3 μm, 2 μm, 3 μm, 4 μm and 5 μm, under different spherical crown depth profile, and the contrast of LED chip light extraction efficiency.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in further detail, but embodiments of the present invention are not limited thereto.
Embodiment
A kind of GaN base LED flip chip for improving light extraction efficiency and heat dissipation characteristics of the two-sided spherical crown graphical sapphire substrate based on micron-scale:
(1) refractive index of GaN layer is greater than sapphire (Al
2o
3) refractive index of substrate layer, Sapphire Substrate layer and low refractive index material layer, GaN layer is high refractive index material layer.
(2) according to the structure of GaN base LED flip chip, sapphire layer is as exiting surface.
(3) GaN layer not bright dipping, needs plating with reflective coating.
(4) upper surface 1 of sapphire layer 3 and lower surface 2 make recessed spherical graphic structure.As can be seen from Figure 3, when radius of spherical crown and the degree of depth are 3 microns, the overall trend of light extraction efficiency is clear and definite, and its ascending order is: make recessed spherical graphic structure without LED during graphic structure, when the upper surface 1 only at sapphire layer 3, make recessed spherical graphic structure and make recessed spherical graphic structure at the upper surface 1 of sapphire layer 3 and lower surface 2 simultaneously when the lower surface 2 only at sapphire layer 3.Wherein the computing formula of light extraction efficiency of LED is:
Luminous flux/active layer the total light flux of light extraction efficiency=LED chip of escaping out
(5) span of the Distances Between Neighboring Edge Points d of spherical graphic structure is: 0.1 ~ 3 μm.As can be seen from Figure 3, recessed spherical graphic structure is all made for the upper surface 1 of sapphire layer 3 and lower surface 2, when the spacing at spherical graphic structure edge is in the scope of 0.2 ~ 3 μm, light extraction efficiency of LED be all greater than 2 times without graphic structure light extraction efficiency of LED; And when the spacing at spherical graphic structure edge is greater than 4 μm, light extraction efficiency of LED starts obvious decline.
(6) the radius r span of spherical graphic structure is: d<r<4d.Fig. 4 is two interfaces graphic structures, and when spherical crown spacing d is respectively 0.2 μm, 0.5 μm, 0.8 μm and 1.2 μm, in different radius of spherical crown situation (the spherical crown degree of depth=radius of spherical crown), the contrast of LED chip light extraction efficiency.As can be seen from Figure 4, recessed spherical graphic structure is all made for the upper surface 1 of sapphire layer 3 and lower surface 2, when the Distances Between Neighboring Edge Points of spherical graphic structure is different, the span of radius of spherical crown r is when d<r<4d, and light extraction efficiency of LED is all higher.Such as when spherical crown spacing be 0.5 μm, the spherical crown degree of depth equal radius of spherical crown time, when radius of spherical crown value is from 0.5 ~ 2 μm, light extraction efficiency of LED is all greater than 51%, and namely light extraction efficiency of LED value is all higher.
(7) span of the spherical crown degree of depth D of spherical graphic structure is: 0.5r≤D≤r.Fig. 5 is two interfaces graphic structures, and spherical crown spacing is 0.5 μm, when radius of spherical crown is respectively 0.5 μm, 1.3 μm, 2 μm, 3 μm, 4 μm and 5 μm, under different spherical crown depth profile, and the contrast of LED chip light extraction efficiency.As can be seen from Figure 5, all make recessed spherical graphic structure for two surface, when the Distances Between Neighboring Edge Points of spherical graphic structure is 0.5 μm, the span of spherical crown degree of depth D is when 0.5r≤D≤r, and light extraction efficiency of LED is all higher.Such as when spherical crown spacing be 0.5 μm, radius of spherical crown be 2 μm time, when spherical crown degree of depth value is from 1 ~ 2 μm, light extraction efficiency of LED value is all higher.
(8) value of spherical crown pattern edge spacing, under the prerequisite of processing technology license, the smaller the better.As can be seen from Figure 3, when radius of spherical crown is different, the most highlight extract efficiency value that often kind of spacing condition obtains reduces gradually along with the increase of distance values.
(9) value of the radius of spherical crown figure, under the prerequisite of processing technology license, the smaller the better.As can be seen from Figure 5, spherical crown spacing is all 0.5 μm, and when the spherical crown degree of depth is different, the most highlight extract efficiency value that often kind of radius of spherical crown condition obtains reduces gradually along with the increase of radius distance value.
Claims (4)
1. based on the LED chip of two interfaces ball crown type graphic structure, its structure is followed successively by from top to bottom: sapphire layer (3), n type gallium nitride layer (4), active layer (5), P type gallium nitride layer (6) and metallic reflection rete (7), is characterized in that: two surfaces of sapphire layer (3) are provided with ball crown type graphic structure.
2. LED chip according to claim 1, is characterized in that: the surperficial ball crown type graphic structure of two of sapphire layer (3) is concave surface.
3. LED chip according to claim 2, is characterized in that: the span of the spacing d between ball crown type graphic structure is 0.1 μm≤d≤3 μm.
4. LED chip according to claim 3, is characterized in that: in ball crown type graphic structure, and the span of the radius r of spherical crown is d<r<4d, and the span of spherical crown degree of depth D is 0.5r≤D≤r.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410651279.XA CN104465924A (en) | 2014-11-17 | 2014-11-17 | LED chip based on double-interface spherical-cap-shaped graph structures |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410651279.XA CN104465924A (en) | 2014-11-17 | 2014-11-17 | LED chip based on double-interface spherical-cap-shaped graph structures |
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| CN104465924A true CN104465924A (en) | 2015-03-25 |
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| CN201410651279.XA Pending CN104465924A (en) | 2014-11-17 | 2014-11-17 | LED chip based on double-interface spherical-cap-shaped graph structures |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102157654A (en) * | 2011-03-30 | 2011-08-17 | 重庆大学 | Inverted mounting LED chip based on double-faced shrinkage pool substrate and component gradual change buffer layer |
| CN102694086A (en) * | 2012-05-28 | 2012-09-26 | 华南理工大学 | Patterned substrate of LED chip and LED chip |
| CN103178179A (en) * | 2011-12-23 | 2013-06-26 | 山东浪潮华光光电子股份有限公司 | Silicide compound substrate GaN based LED (Light-Emitting Diode) chip with two patterned sides and manufacturing method thereof |
-
2014
- 2014-11-17 CN CN201410651279.XA patent/CN104465924A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102157654A (en) * | 2011-03-30 | 2011-08-17 | 重庆大学 | Inverted mounting LED chip based on double-faced shrinkage pool substrate and component gradual change buffer layer |
| CN103178179A (en) * | 2011-12-23 | 2013-06-26 | 山东浪潮华光光电子股份有限公司 | Silicide compound substrate GaN based LED (Light-Emitting Diode) chip with two patterned sides and manufacturing method thereof |
| CN102694086A (en) * | 2012-05-28 | 2012-09-26 | 华南理工大学 | Patterned substrate of LED chip and LED chip |
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Application publication date: 20150325 |
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