CN1889278A - Method for raising chip brightness - Google Patents
Method for raising chip brightness Download PDFInfo
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- CN1889278A CN1889278A CNA2005100271841A CN200510027184A CN1889278A CN 1889278 A CN1889278 A CN 1889278A CN A2005100271841 A CNA2005100271841 A CN A2005100271841A CN 200510027184 A CN200510027184 A CN 200510027184A CN 1889278 A CN1889278 A CN 1889278A
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- down mounting
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Abstract
The present invention relates to a raising chip brightness method. It contains face down bonding chip electrode with silicon heat sink chip, surface roughening said chip substrate to reduce total reflection and increase luminous surface, thereby raising outgoing brightness to make luminous efficiency raising by 30 per cent, and another method reducing total reflection and increasing outgoing efficiency being the quartering wavelength antireflection filming, filming material refractive index needing between sapphire and air, utilizing indium tin oxide ITO, silicon dioxide SiO2 or silicon nitride3Si4 as antireflection filming, capable of reincreasing outgoing efficiency by 20 per cent, finally simultaneously using two above-mentioned methods, driven at 500 milliampere current capable of obtaining more 50 per cent optical efficiency than ordinary up side down welding chip.
Description
Technical field
The present invention relates to a kind of method that improves chip brightness and relate in particular to a kind of method that thereby the chip substrate surface roughening is improved chip brightness.
Background technology
So-called light-emitting diode (LED) is exactly that the semi-conducting material that will possess direct gap is made the P/N diode, and under thermally equilibrated condition, most electronics does not have enough energy to rise to conductive strips.Impose forward Times pressure again, then electronics can rise to conductive strips, and the original position of electronics on former valence bond band promptly produces the hole.Depress at suitable Times, electronics, hole just can P/N interface zone (P-N Juetion) in conjunction with and luminous, the electric current of power supply can constantly replenish electronics and hole and give N type semiconductor and P type semiconductor, make electronics, hole in conjunction with and luminous being continued carries out.The luminous principle of LED is the combination in electronics and hole, and the energy of electron institute band discharges with the form of light, is called spontaneous radiation.The light that general LED is emitted is to belong to this type.
General traditional LED manufacture method is an epitaxial growth monocrystal material structure on substrate, minus semi-conducting material normally, luminescent layer and eurymeric semi-conducting material, different along with material and structure, the light color that is sent has also had variation, for example gallium nitride is generally used for the material of blue light and green glow, and substrate and material structure have very big difference, bluish-green and purple light is a substrate epitaxial indium gallium N structure with the sapphire of insulation usually, so and the non-conductive blue green light processing procedure of sapphire is complicated, and positive and negative electrode is all in the front, also will be behind the epitaxial manufacture process through the making of electrode, the etching in negative pole zone, the photoetching of chip surface and cleaning, the detection of the characteristics of luminescence, attenuate cuts into 1 chip, a so traditional blue green light chip structure such as Fig. 1, shown in 2, can be divided into anodal solder joint 1, transparency electrode 2, eurymeric gallium nitride 3, luminescent layer 4, minus gallium nitride 5, Sapphire Substrate 6, negative pole solder joint 7 is formed, because the heat radiation of Sapphire Substrate 6 is relatively poor, and luminescent layer and thermal conductive zone distance is bigger, so traditional light-emitting diode chip for backlight unit can only be done the application of small size 0.3m * 0.3mm and 20 milliamperes of mA of low current.
Along with chip processing procedure ability constantly promotes, luminous efficiency and brightness that light-emitting diode requires constantly increase, traditional processing procedure has not applied following application, it is good to dispel the heat, luminous efficiency is high walks out of stage gradually with high-power light-emitting diode chip for backlight unit, so the light-emitting diode of flip chip bonding technology replaces the main flow that traditional technology becomes high-power chip gradually, the structure of high-power chip extension is identical with traditional light emitting diode construction, but chip fabrication technique really is not quite similar, as shown in Figure 3, it becomes light-emitting area with the substrate of upside-down mounting welding core 8, electrode and silicon are heat sink, and chip 9 is fitted, therefore upside-down mounting welding core 8 is very approaching with the heat sink district of silicon chip 9, radiating effect increases, big current drives can not have surplus heat yet, so chip area can strengthen 1mm * 1mm, also can under big electric current, use 300 or 500mA, and then reach 1 watt power.But for luminous efficiency, because the substrate of upside-down mounting welding core 8 is very smooth, the light loss of its total reflection accounts for greatly about 30%, and its luminous efficiency of chip of face-down bonding technique production at present can only arrive 20 to 30 lumens/watt at most, also has a segment distance from illumination.
Summary of the invention
The objective of the invention is to invent a kind of method that improves the chip exterior luminous efficiency.
For realizing above purpose, technical scheme of the present invention provides a kind of method that improves chip brightness, the electrode of upside-down mounting welding core and silicon are heat sink, and chip is fitted, it is characterized in that, with the substrate surface roughening of upside-down mounting welding core, its method is: wear into the substrate surface of upside-down mounting welding core coarse with diamond dust.
A kind of method that improves chip brightness, the electrode of upside-down mounting welding core and silicon are heat sink, and chip is fitted, it is characterized in that with the substrate surface roughening of upside-down mounting welding core, its method is: at first the substrate surface at upside-down mounting welding core pastes one deck four/wavelength antireflection plated film; Utilize inductance coupling type reactive ion etching machine (ICP-RIE) to use the method for reactive ion chemical etching then with reacting gas etching four/wavelength antireflection coated surface, but reach the effect of surface roughening or chemical reagent etching four/wavelength antireflection coated surface of utilization etching coatings, make four/wavelength antireflection plated film roughening.
A kind of method that improves chip brightness, the electrode of upside-down mounting welding core and silicon are heat sink, and chip is fitted, it is characterized in that with the substrate surface roughening of upside-down mounting welding core, its method is: at first the substrate surface at upside-down mounting welding core pastes one deck four/wavelength antireflection plated film; Wear into four/wavelength antireflection plated film coarse with diamond dust then.
The present invention adopts diamond dust to make rough surface help to reduce total reflection, and light-emitting area increases behind the roughening, thereby make emitting brightness improve, make luminous efficiency promote about 30%, and another method that reduces total reflection increase light extraction efficiency is exactly four/wavelength antireflection plated film, the Coating Materials refractive index needs between sapphire and air, we utilize tin indium oxide ITO, silicon dioxide SiO2 or these materials of silicon nitride Si3N4 are done the antireflection plated film, light extraction efficiency can be increased by 20% again, and we utilize roughening to add tin indium oxide ITO two kinds of methods simultaneously at last, silicon dioxide SiO2 or silicon nitride Si3N4 antireflection plated film, under 500 milliamperes current drives, can obtain having more 50% optical efficiency than general upside-down mounting welding core, presentation of results flip chip bonding processing procedure can utilize these two kinds of methods to increase light extraction efficiency simultaneously, connects again apart from the target that reaches the semiconductor lighting industrialization to go a step further.
Advantage of the present invention is to have more 50% optical efficiency than general upside-down mounting welding core.
Description of drawings
Fig. 1,2 is traditional blue green light chip structure schematic diagram;
Fig. 3 is the flip welding LED structural representation;
Fig. 4 is embodiment 1 a surface roughness schematic diagram;
Fig. 5 is embodiment 2 surface roughness schematic diagrames.
Embodiment
The invention will be further described below in conjunction with drawings and Examples.
Embodiment 1
As shown in Figure 4, be embodiment 1 surface roughness schematic diagram, a kind of method that improves chip brightness, the electrode of upside-down mounting welding core 8 and silicon are heat sink, and chip 9 is fitted, with substrate surface 10 roughenings of upside-down mounting welding core 8, its method is: wear into the substrate surface 10 of upside-down mounting welding core 8 coarse with diamond dust.
As shown in Figure 5, be embodiment 2 surface roughness schematic diagrames, a kind of method that improves chip brightness, the electrode of upside-down mounting welding core 8 and silicon are heat sink, and chip 9 is fitted, substrate surface 10 roughenings with upside-down mounting welding core 8, its method is: at first the substrate surface 10 at upside-down mounting welding core 8 pastes indium oxide layer tin ITO four/wavelength antireflection plated film 11, utilize inductance coupling type reactive ion etching machine (ICP-RIE) to use the method for reactive ion chemical etching then with reacting gas etching four/wavelength antireflection plated film (11) surface, make four/wavelength antireflection plated film, 11 roughenings, described reacting gas is a chlorine, boron chloride or methane.
Embodiment 3
Utilize chemical reagent etching four/wavelength antireflection plated film (11) surface, make four/wavelength antireflection plated film, 11 roughenings, described chemical reagent is hydrofluoric acid and hydrochloric acid or nitric acid, and other steps are the same with embodiment 2.
Embodiment 4
Embodiment 4
Embodiment 5
A kind of method that improves chip brightness, the electrode of upside-down mounting welding core 8 and silicon are heat sink, and chip 9 is fitted, substrate surface 10 roughenings with upside-down mounting welding core 8, its method is: at first the substrate surface 10 at upside-down mounting welding core 8 pastes indium oxide layer tin ITO four/wavelength antireflection plated film 11, wears into four/wavelength antireflection plated film 11 coarse with diamond dust then.
Embodiment 6
Described four/wavelength antireflection plated film 11 is refractive index all materials between the air of 2.5 sapphires and 1.
Claims (8)
1. method that improves chip brightness, the electrode of upside-down mounting welding core (8) and the heat sink chip of silicon (9) are fitted, it is characterized in that with substrate surface (10) roughening of upside-down mounting welding core (8), its method is: wear into the substrate surface (10) of upside-down mounting welding core (8) coarse with diamond dust.
2. method that improves chip brightness, the electrode of upside-down mounting welding core (8) and the heat sink chip of silicon (9) are fitted, and it is characterized in that with substrate surface (10) roughening of upside-down mounting welding core (8), its method is:
2.1 at first the substrate surface (10) in upside-down mounting welding core (8) pastes one deck four/wavelength antireflection plated film (11);
2.2 utilize inductance coupling type reactive ion etching machine (ICP-RIE) to use the method for reactive ion chemical etching then with reacting gas etching four/wavelength antireflection plated film (11) surface.
3. a kind of method that improves chip brightness according to claim 2 is characterized in that described reacting gas is chlorine, boron chloride or methane.
4. a kind of method that improves chip brightness according to claim 2 is characterized in that described method is:
4.1 at first the substrate surface (10) in upside-down mounting welding core (8) pastes one deck four/wavelength antireflection plated film (11);
4.2 utilize chemical reagent etching four/wavelength antireflection plated film (11) surface then.
5. a kind of method that improves chip brightness according to claim 4 is characterized in that, described chemical reagent is hydrofluoric acid and hydrochloric acid or nitric acid.
6. method that improves chip brightness, the electrode of upside-down mounting welding core (8) and the heat sink chip of silicon (9) are fitted, and it is characterized in that with substrate surface (10) roughening of upside-down mounting welding core (8), its method is:
6.1 at first the substrate surface (10) in upside-down mounting welding core (8) pastes one deck four/wavelength antireflection plated film (11);
6.2 wear into four/wavelength antireflection plated film (11) coarse with diamond dust then.
7. according to claim 2 or 3 described a kind of methods that improve chip brightness, it is characterized in that all material that described four/wavelength antireflection plated film (11) is a refractive index between the air of 2.5 sapphire and 1.
8. according to claim 2 or 3 or 4 described a kind of methods that improve chip brightness, it is characterized in that described four/wavelength antireflection plated film (11) is tin indium oxide ITO, silicon dioxide SiO
2Or silicon nitride Si
3N
4
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2005100271841A CN1889278A (en) | 2005-06-28 | 2005-06-28 | Method for raising chip brightness |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2005100271841A CN1889278A (en) | 2005-06-28 | 2005-06-28 | Method for raising chip brightness |
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| Publication Number | Publication Date |
|---|---|
| CN1889278A true CN1889278A (en) | 2007-01-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNA2005100271841A Pending CN1889278A (en) | 2005-06-28 | 2005-06-28 | Method for raising chip brightness |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010075653A1 (en) * | 2008-12-31 | 2010-07-08 | 深圳市方大国科光电技术有限公司 | Method of increasing luminous efficiency by roughing surface of epitaxial wafer of light-emitting diode |
| CN102468376A (en) * | 2010-11-16 | 2012-05-23 | 上海大晨光电科技有限公司 | Method for preparing ternary GaAsP aluminum electrode light-emitting diode chip |
| CN102655194A (en) * | 2012-05-23 | 2012-09-05 | 中国科学院半导体研究所 | Method for improving light emitting efficiency of ultraviolet light emitting diode |
| CN105280665A (en) * | 2014-06-23 | 2016-01-27 | 晶元光电股份有限公司 | Photoelectric element and manufacture method thereof |
| CN107425097A (en) * | 2017-08-09 | 2017-12-01 | 甘志银 | A kind of method for improving deep ultraviolet LED light extraction efficiency |
| CN113540310A (en) * | 2021-06-22 | 2021-10-22 | 苏州紫灿科技有限公司 | Inverted deep ultraviolet LED chip and manufacturing method thereof |
-
2005
- 2005-06-28 CN CNA2005100271841A patent/CN1889278A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010075653A1 (en) * | 2008-12-31 | 2010-07-08 | 深圳市方大国科光电技术有限公司 | Method of increasing luminous efficiency by roughing surface of epitaxial wafer of light-emitting diode |
| CN102468376A (en) * | 2010-11-16 | 2012-05-23 | 上海大晨光电科技有限公司 | Method for preparing ternary GaAsP aluminum electrode light-emitting diode chip |
| CN102468376B (en) * | 2010-11-16 | 2013-10-09 | 上海大晨光电科技有限公司 | Method for preparing ternary GaAsP aluminum electrode light-emitting diode chip |
| CN102655194A (en) * | 2012-05-23 | 2012-09-05 | 中国科学院半导体研究所 | Method for improving light emitting efficiency of ultraviolet light emitting diode |
| CN105280665A (en) * | 2014-06-23 | 2016-01-27 | 晶元光电股份有限公司 | Photoelectric element and manufacture method thereof |
| CN105280665B (en) * | 2014-06-23 | 2020-05-15 | 晶元光电股份有限公司 | Photoelectric element and manufacturing method thereof |
| CN107425097A (en) * | 2017-08-09 | 2017-12-01 | 甘志银 | A kind of method for improving deep ultraviolet LED light extraction efficiency |
| CN113540310A (en) * | 2021-06-22 | 2021-10-22 | 苏州紫灿科技有限公司 | Inverted deep ultraviolet LED chip and manufacturing method thereof |
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