CN101140963A - Method for enhancing upside-down mounting welding core plate brightness - Google Patents
Method for enhancing upside-down mounting welding core plate brightness Download PDFInfo
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- CN101140963A CN101140963A CNA2006100307706A CN200610030770A CN101140963A CN 101140963 A CN101140963 A CN 101140963A CN A2006100307706 A CNA2006100307706 A CN A2006100307706A CN 200610030770 A CN200610030770 A CN 200610030770A CN 101140963 A CN101140963 A CN 101140963A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
Abstract
The invention relates to a method for lighting up the backbonded chip, which is characterized in plating the metal of high reflectivity onto the original metal circuit and the light absorbed golden ball. The method is: first, oxidizing the silicon substrate with heat reacting furnace to generate a silicon dioxide layer, photoetching the pattern by photo exposure machine and etching the needless silicon dioxide with hydrofluoric acid buffer solution of 1% to 3%, vapor depositing a layer of high reflectivity metal onto the silicon dioxide layer by thermal coater and etching two adjacent positive and negative electrodes which covers 40% to 95% surface areas of the silicon substrate ferric nitrate mixed solution; second, balling the golden balls on the surface of both positive and negative electrodes by balling machine, plating a layer of high reflectivity metal respectively on two positive and negative electrodes and the golden balls by thermal coater, etching the high reflectivity metal layer with hydrofluoric acid buffer solution and the left metal layer is adhered to two positive and negative electrodes and the golden balls; finally, converting the chip by wire bonder to make its electrodes aligned with the golden balls, and compaginating the electrodes with golden balls by heating and ultra audible sound. The invention has the advantage of increasing the optical efficiency of 40% more than that of traditional backbonded chip.
Description
Technical field
The present invention relates to a kind of method that improves upside-down mounting welding core plate brightness, relating in particular to a kind of metal that plates on the supporting substrate of flip-chip increases reflection of light, thereby improves the method for chip brightness, belongs to the LED technical field.
Background technology
So-called light-emitting diode (LED) is exactly that the semi-conducting material that will possess direct gap is made the P/N diode, and under thermally equilibrated condition, most electronics does not have enough energy to rise to conductive strips.Impose forward bias voltage drop again, then electronics can rise to conductive strips, and the original position of electronics on former valence bond band promptly produces the hole.Under suitable bias voltage, electronics, hole just can P/N interface zone (P-N Juction) in conjunction with and luminous, the electric current of power supply can constantly replenish electronics and hole and give N type semiconductor and P type semiconductor, make electronics, hole in conjunction with and luminous being continued carries out.The luminous principle of LED is the combination in electronics and hole, and the energy of electron institute band discharges with the form of light, is called spontaneous radiation.The light that general LED is emitted is to belong to this type.
Traditional LED manufacture method is an epitaxial growth monocrystal material structure on substrate, minus semi-conducting material normally, luminescent layer and eurymeric semi-conducting material, different along with material and structure, the light color that is sent has also had variation, for example gallium nitride is generally used for the material of blue light and green glow, and substrate and material structure have very big difference, bluish-green and purple light is a substrate epitaxial indium gallium N structure with the sapphire of insulation usually, also will be behind the epitaxial manufacture process through the making of electrode, the etching in negative pole zone, the photoetching of chip surface and cleaning, the detection of the characteristics of luminescence, attenuate cuts into many chip, so a traditional blue green light chip structure as shown in Figure 1, just can be divided into, negative pole solder joint 1, transparency electrode 2, eurymeric gallium nitride 3, luminescent layer 4, minus gallium nitride 6, essence type gallium nitride buffering 7, Sapphire Substrate 8 is formed, because the heat radiation of Sapphire Substrate 8 is relatively poor, and luminescent layer and thermal conductive zone distance is bigger, so traditional light-emitting diode chip for backlight unit can only be done the application of 20 milliamperes of the about 0.3mm * 0.3mm of small size and low currents, the power 0.07w that only has an appointment, and large size chip because of dispel the heat former thereby light efficiency low.Along with chip processing procedure ability constantly promotes, luminous efficiency and brightness that light-emitting diode requires constantly increase, traditional processing procedure has not applied following application, it is good to dispel the heat, luminous efficiency is high walks out of stage gradually with high-power light-emitting diode chip for backlight unit, to become the structure of main flow technology upside-down mounting high-power chip extension of high-power chip identical with traditional light emitting diode construction so the light-emitting diode of flip chip bonding technology replaces traditional technology gradually, but chip fabrication technique is not quite similar, as shown in Figure 2, it becomes luminous front with the substrate 8 of chip, electrode 9 is fitted with the gold goal 10 on the heat sink substrate 12 of silicon, therefore upside-down mounting welding core and the heat sink substrate of silicon 12 heat sink districts are very approaching, radiating effect increases, big current drives can not have surplus heat yet, so chip area can be increased to 1mm * 1mm even bigger, also can under big electric current, use 350 milliamperes even higher, and then reach 1 watt even high power more.But since the metallic circuit 11 on the heat sink substrate 12 of silicon to account for the heat sink substrate 12 surface area ratios of silicon less, and same higher to the absorptivity of light, therefore when illumination is on the heat sink substrate 12 of silicon, most light is absorbed by the heat sink substrate 12 of silicon, reflects seldom; In addition, be used for the Metal Ball 10 that upside-down mounting welding core combines with the heat sink substrate of silicon and be gold goal, itself is also a lot of to the absorption of light, thereby causes the luminous efficiency of present flip-chip to have only～301m/W.
Summary of the invention
The purpose of this invention is to provide a kind of method that improves upside-down mounting welding core plate brightness.
For realizing above purpose, technical scheme of the present invention provides a kind of method that improves upside-down mounting welding core plate brightness, it is characterized in that, the metal of high reflectance is replaced traditional high extinction metallic circuit, increases the metallic circuit area, thereby reduce the extinction zone of silicon substrate, and the gold goal of extinction plates one deck high-reflectivity metal, reduces the metal extinction, and its method is:
(1) at first that 50～500 μ m are the thick heat sink substrate of silicon is placed on and makes its surface oxidation in the thermal response stove,
Generate the thick layer of silicon dioxide of 0.1～10um, make the surface area that accounts for the heat sink substrate of silicon by lithography with exposure machine, unwanted SiO 2 etch is fallen with 1%～30% hydrofluoric acid cushioning liquid at adjacent two silicon dioxide films of 40%～95%;
(2) with the Titanium nickeline of the thick high reflectance of evaporator evaporation last layer 0.1～10 μ m on silicon dioxide film, etch the surface area percentage that accounts for the heat sink substrate of silicon with ferric nitrate at adjacent two titanium nickeline metal positive and negative electrodes of 60%～98%;
Secondly (3) plant gold goal respectively with ball attachment machine on two positive and negative electrode surfaces, then on two positive and negative electrodes and gold goal, plate the high-reflectivity metal layer of one deck 0.1～10 μ m, be attached on positive and negative electrode and the gold goal by the etched metal level of 1%～30% hydrofluoric acid solution then with evaporator;
(4) decide machine with nation at last chip is inverted, chip electrode is aimed at gold goal, decide the heating, ultrasonic of machine again by nation, make chip electrode and gold goal strong bonded.
The present invention adopts vast scale area high-reflectivity metal to help to reduce the absorption of silicon chip to chip light-emitting, improve the reflectivity of bright dipping on the silicon heat sink substrate, improve light emission rate, and large-area heat dissipation metal face reduces the chip serviceability temperature, improve light efficiency, thereby make emitting brightness improve, make luminous efficiency promote about 30%, and the absorbed method of another reduction chip light-emitting is exactly with wrapping in conjunction with the metal of gold goal with high reflectance between upside-down mounting welding core and the silicon heat sink substrate, coarse and metal high reflectance can change light source direction, improve light emission rate, light extraction efficiency can be increased by 10% again, and we use two kinds of methods simultaneously at last, obtain having more 40% light extraction efficiency than general upside-down mounting welding core, presentation of results flip chip bonding processing procedure can utilize these two kinds of methods to increase light extraction efficiency simultaneously, and distance reaches the target of semiconductor lighting industrialization again near a step.
Advantage of the present invention is to have more 40% optical efficiency than general upside-down mounting welding core.
Description of drawings
Fig. 1 is traditional blue green light chip structure schematic diagram;
Fig. 2 is traditional flip welding LED structural representation;
Fig. 3 implements structural representation for upside-down mounting welding core of the present invention.
Embodiment
The invention will be further described with enforcement below in conjunction with accompanying drawing.
As shown in Figure 3, for upside-down mounting welding core of the present invention is implemented structural representation, the method of raising LED of the present invention brightness, it is the metal that argent or aluminium with high reflectance replace original high absorptance, increase the heat sink substrate surface metallic area of silicon, and the gold goal surface of extinction plated high-reflectivity metal, its method is: the heat sink substrate 18 of at first that 250 μ m are thick silicon is placed in the thermal response stove, make its surface oxidation, generate the thick layer of silicon dioxide of 2 μ m, make the surface area that accounts for the heat sink substrate 18 of silicon by lithography with exposure machine at adjacent two silicon dioxide films 17 of 80%, unwanted SiO 2 etch is fallen with 20% hydrofluoric acid cushioning liquid; With the thick high reflectance titanium nickeline metal of evaporator evaporation 5 μ m on the heat sink substrate 18 of silicon, fine and close Titanium nickeline can attach on the silicon dioxide film well, be difficult for peeling off, with the heat sink substrate 18 of ferric nitrate etching silicon, unwanted metal on the substrate is partly got rid of, stayed two blocks of continuous metals 15 as positive and negative electrode circuit; The metallic circuit area increases, and the surface area percentage that accounts for the heat sink substrate 18 of silicon is 80%, and exposed heat sink substrate 18 areas of extinction silicon reduce greatly; Plant gold goal 14 on two blocks of both positive and negative polarity metals, 15 surfaces with the HummingBirdST of ASM company ball attachment machine then, then on two blocks of both positive and negative polarity metals 15 and gold goal 14, plate the thick high-reflectivity metal silver of one deck 3 μ m respectively with evaporator, the heat sink substrate 18 of silicon is immersed in the 20% hydrofluoric acid cushioning liquid, loose argent 16 is attached on both positive and negative polarity metal 15 and the gold goal 14, this metal quality is loose, surface irregularity, can more change light source direction, more effectively the photoconduction that chip is sent goes out, deciding machine with the AD819-11A nation of ASM company at last is inverted chip, chip electrode 13 is aimed at gold goal 14, heating plate by this equipment, ultrasonic system, make electrode 13 and gold goal 14 strong bonded, the metal bonding wire acts on respectively on the both positive and negative polarity metallic circuit and gets final product during encapsulation.
Plate the thick high-reflectivity metal aluminium lamination of one deck 3 μ m respectively with evaporator on two blocks of both positive and negative polarity metals 15 and gold goal 14, other is the same with embodiment 1.
Claims (2)
1. method that improves upside-down mounting welding core plate brightness, it is characterized in that, the metal of high reflectance is replaced traditional high extinction metallic circuit, increases the metallic circuit area, thereby reduce the extinction zone of silicon substrate, and the gold goal of extinction plates one deck high-reflectivity metal, reduce the metal extinction, its method is:
(1) at first makes the thick heat sink substrate of silicon (18) surface oxidation of 50～500 μ m with the thermal response stove, generate the thick layer of silicon dioxide of 0.1～10um, make the surface area that accounts for the heat sink substrate of silicon (18) by lithography with exposure machine at adjacent two silicon dioxide films (17) of 40%～95%, unwanted SiO 2 etch is fallen with 1%～30% hydrofluoric acid cushioning liquid;
(2) with the Titanium nickeline of the thick high reflectance of evaporator evaporation last layer 0.1～10 μ m on silicon dioxide film (17), etch the surface area percentage that accounts for the heat sink substrate of silicon (18) with ferric nitrate at adjacent two titanium nickeline metal positive and negative electrodes (15) of 60%～98%;
(3) secondly plant gold goal (14) respectively with ball attachment machine on two positive and negative electrodes (15) surface, then go up the high-reflectivity metal layer that plates one deck 0.1～10 μ m with evaporator, be attached on positive and negative electrode (15) and the gold goal (14) by the etched metal level of 1%～30% hydrofluoric acid solution (16) then at two positive and negative electrodes (15) and gold goal (14);
(4) decide machine with nation at last chip is inverted, chip electrode (13) is aimed at gold goal (14),, make chip electrode (13) and gold goal (14) strong bonded by 50～300 degrees centigrade of heating, 0.1～10W power ultrasonic.
2. a kind of method that improves upside-down mounting welding core plate brightness according to claim 1 is characterized in that described metal level is silver or aluminium lamination.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006100307706A CN101140963A (en) | 2006-09-04 | 2006-09-04 | Method for enhancing upside-down mounting welding core plate brightness |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006100307706A CN101140963A (en) | 2006-09-04 | 2006-09-04 | Method for enhancing upside-down mounting welding core plate brightness |
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| CN101140963A true CN101140963A (en) | 2008-03-12 |
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| CNA2006100307706A Pending CN101140963A (en) | 2006-09-04 | 2006-09-04 | Method for enhancing upside-down mounting welding core plate brightness |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101789382A (en) * | 2010-03-22 | 2010-07-28 | 浙江正邦电力电子有限公司 | Method for preparing titanium, nickel and silver multilayer metal power semiconductor electrode |
| CN102969422A (en) * | 2012-12-17 | 2013-03-13 | 中国科学院半导体研究所 | Manufacturing method of LED (Light Emitted Diode) with high light transmittance and inverted structure |
| CN102969435A (en) * | 2012-12-04 | 2013-03-13 | 深圳市优信光科技有限公司 | LED (Light-Emitting Diode) with sapphire substrate inversion structure |
| CN103035821A (en) * | 2013-01-08 | 2013-04-10 | 聚灿光电科技(苏州)有限公司 | Package substrate based on flip chip and preparation method thereof |
| CN103822143A (en) * | 2014-02-18 | 2014-05-28 | 江苏新广联绿色照明工程有限公司 | LED (light emitting diode) street lamp light source module with silicon substrates |
| CN103931002A (en) * | 2011-01-31 | 2014-07-16 | 克里公司 | Reflective mounting substrates for flip-chip mounted horizontal leds |
| CN110350069A (en) * | 2013-07-24 | 2019-10-18 | 晶元光电股份有限公司 | Luminous die and correlation technique comprising wavelength conversion material |
-
2006
- 2006-09-04 CN CNA2006100307706A patent/CN101140963A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101789382A (en) * | 2010-03-22 | 2010-07-28 | 浙江正邦电力电子有限公司 | Method for preparing titanium, nickel and silver multilayer metal power semiconductor electrode |
| CN101789382B (en) * | 2010-03-22 | 2011-07-20 | 浙江正邦电力电子有限公司 | Method for preparing titanium, nickel and silver multilayer metal power semiconductor electrode |
| CN103931002A (en) * | 2011-01-31 | 2014-07-16 | 克里公司 | Reflective mounting substrates for flip-chip mounted horizontal leds |
| CN102969435A (en) * | 2012-12-04 | 2013-03-13 | 深圳市优信光科技有限公司 | LED (Light-Emitting Diode) with sapphire substrate inversion structure |
| CN102969422A (en) * | 2012-12-17 | 2013-03-13 | 中国科学院半导体研究所 | Manufacturing method of LED (Light Emitted Diode) with high light transmittance and inverted structure |
| CN102969422B (en) * | 2012-12-17 | 2015-03-04 | 中国科学院半导体研究所 | Manufacturing method of LED (Light Emitted Diode) with high light transmittance and inverted structure |
| CN103035821A (en) * | 2013-01-08 | 2013-04-10 | 聚灿光电科技(苏州)有限公司 | Package substrate based on flip chip and preparation method thereof |
| CN110350069A (en) * | 2013-07-24 | 2019-10-18 | 晶元光电股份有限公司 | Luminous die and correlation technique comprising wavelength conversion material |
| CN110350069B (en) * | 2013-07-24 | 2023-06-30 | 晶元光电股份有限公司 | Light emitting die including wavelength conversion material and method of making same |
| CN103822143A (en) * | 2014-02-18 | 2014-05-28 | 江苏新广联绿色照明工程有限公司 | LED (light emitting diode) street lamp light source module with silicon substrates |
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Open date: 20080312 |