JP2007067184A - Led package - Google Patents

Led package Download PDF

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Publication number
JP2007067184A
JP2007067184A JP2005251537A JP2005251537A JP2007067184A JP 2007067184 A JP2007067184 A JP 2007067184A JP 2005251537 A JP2005251537 A JP 2005251537A JP 2005251537 A JP2005251537 A JP 2005251537A JP 2007067184 A JP2007067184 A JP 2007067184A
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JP
Japan
Prior art keywords
electrode
led package
lead frame
light emitting
gallium nitride
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Pending
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JP2005251537A
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Japanese (ja)
Inventor
Hisayuki Miki
Koichiro Takahashi
久幸 三木
浩一郎 高橋
Original Assignee
Showa Denko Kk
昭和電工株式会社
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Application filed by Showa Denko Kk, 昭和電工株式会社 filed Critical Showa Denko Kk
Priority to JP2005251537A priority Critical patent/JP2007067184A/en
Publication of JP2007067184A publication Critical patent/JP2007067184A/en
Application status is Pending legal-status Critical

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Abstract

<P>PROBLEM TO BE SOLVED: To provide an LED package using a gallium-nitride-based compound semiconductor light emitting element and using a phosphor wherein both its power-light converting efficiency and its light wavelength converting efficiency are excellent, and the light emitted from it can be taken out to the external efficiently, and further, its manufacturing processes are simple. <P>SOLUTION: In the LED package having a light emitting element including the laminate of a gallium-nitride-based compound semiconductor and having a phosphor, the connection of one electrode of the light emitting element, e.g., p-electrode with a lead frame is performed by a wire connection, and the connection of the other electrode, e.g., n-electrode with the lead frame is performed by a non-wire connection. As the non-wire connection, there is such an example that the electrode formed on the semiconductor layer exposed by removing the substrate of the LED is joined to the lead frame, that a missed portion, e.g., a hole to the semiconductor layer is provided in the substrate and a conductor is filled into the missed portion, or that an electrode, the side surface of the semiconductor layer opposed to the electrode, and the lead frame are connected by conductors while sandwiching the light emitting layer between them. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention uses a gallium nitride compound semiconductor light emitting element and a phosphor, has excellent power-light conversion efficiency and light wavelength conversion efficiency, can efficiently extract emitted light to the outside, and has a simple manufacturing process. This relates to an LED package for white light or the like.

In recent years, GaN-based compound semiconductor materials have attracted attention as semiconductor materials for short wavelength light emitting devices. GaN-based compound semiconductors include sapphire single crystals, various oxides and III-V compounds as substrates, and metalorganic vapor phase chemical reaction method (MOCVD method) and molecular beam epitaxy method (MBE method). And so on.
In a light-emitting element using a GaN-based compound semiconductor material, since sapphire widely used as a substrate is insulative, it often has a structure in which both n-pole and p-pole electrodes are formed on the same surface. It was.

  As a characteristic of the GaN-based compound semiconductor material, there is a point that light having a short wavelength can be efficiently output. Utilizing such characteristics, high-power blue LEDs and ultraviolet LEDs have been produced. Further, light having a longer wavelength can be obtained by converting the wavelength using short-wavelength light as an excitation light source. Utilizing this property, a technology for converting a wavelength by using a gallium nitride-based compound semiconductor light emitting element chip and applying this light to a phosphor is widely used.

  In an element structure in which two electrodes are formed on the same surface, there are two wires for connecting them to the lead frame. However, it is said that Au, which is often used as a wire material, absorbs short-wavelength light and lowers the efficiency of light emission wavelength conversion. (See Patent Document 1)

On the other hand, there is an element using a conductive substrate such as SiC, and a structure having electrodes on both one surface of the element and the other surface (referred to as an upper and lower electrode structure) has been realized. Yes. In this case, there is one wire for connection.
However, when an attempt is made to excite the phosphor with light emitted from the chip while leaving the SiC substrate, the transmittance of SiC is low with respect to short-wavelength light that can excite the phosphor, so that the substrate is absorbed and emits light. Has a problem that it cannot be taken out well.

As a method of realizing the upper and lower electrodes using the laminated structure on the sapphire substrate, one is a method in which an electrode is formed on the side surface of the n layer (see Patent Document 3), or a hole is made in sapphire and n is formed from the back side. There has also been proposed a method for conducting the electrodes (see Patent Document 4). Furthermore, in recent years, a technique has been developed in which a layer opposite to the surface of the gallium nitride crystal is exposed by peeling the sapphire substrate, and an electrode is formed thereon to realize an upper and lower electrode structure.
However, these prior arts do not discuss combinations with resins containing phosphors.
JP-A-10-56208 Special table flat 10-506234, etc. JP 2-81484 A JP 11-31842 A

In a conventional element using a substrate such as a sapphire substrate, a mounting method has been adopted in which both n and p electrodes are formed on the same surface and connected to a lead frame with two gold wires. However, if two gold wires are used, the light emitted from the chip by the gold wire is absorbed, and the light emitted from the chip cannot be used effectively. In particular, if a region containing phosphors is formed around the chip, and this is excited by light emitted from the chip to convert the wavelength, the influence of the excitation light absorbed by the gold wire is ignored. Can not.
On the other hand, a chip called flip chip, in which electrodes are mounted with bumps or solder with the substrate side facing up, is disclosed, but mounting of this chip is not simple because of the large number of steps.
The object of the present invention is to solve the above-mentioned problems, to be excellent in both power-light conversion efficiency and light wavelength conversion efficiency, and to efficiently extract emitted light to the outside. It is an object of the present invention to provide an LED package using a gallium nitride-based compound semiconductor light-emitting device and a phosphor that are simple.

The present invention has been made to solve the above-described problems, and includes the following inventions.
(1) In an LED package including a light emitting element including a laminate of a gallium nitride compound semiconductor and a phosphor, one electrode of the light emitting element and the lead frame are connected by a wire, and the other electrode and the lead frame are connected. An LED package characterized by non-wire connection.
(2) In an LED package including a light emitting element including a laminate of gallium nitride compound semiconductors and a phosphor, one electrode of the light emitting element and the lead frame are connected by a wire, and the other electrode and the lead frame are connected. An LED package comprising: bonding an electrode formed on a semiconductor layer exposed by removing a substrate and a lead frame.

(3) In an LED package including a light emitting element including a laminate of a gallium nitride-based compound semiconductor and a phosphor, one electrode of the light emitting element and the lead frame are connected by a wire, and the other electrode and the lead frame are connected. An LED package comprising: an insulating substrate provided with a missing portion reaching the semiconductor layer; and a conductor filled in the missing portion, wherein the semiconductor layer and the electrode are electrically connected, and the electrode is connected to a lead frame. .
(4) The LED package according to (3), wherein the missing portion is a perforation.
(5) In an LED package including a light emitting element including a laminate of a gallium nitride compound semiconductor and a phosphor, one electrode of the light emitting element and the lead frame are connected by a wire, and the other electrode and the lead frame are connected. An LED package comprising: a lead frame connected to a side surface of a semiconductor layer opposite to the one electrode with a light emitting layer interposed therebetween.

(6) The substrate used for the growth of the laminate of the gallium nitride compound semiconductor is an insulating substrate such as sapphire, a gallium nitride compound semiconductor substrate such as GaN, or SiC, Si, ZnO, Ga 2 O 3 or the like. The LED package according to any one of (1) to (5), which is selected from the group consisting of conductive substrates.
(7) The LED package as described in any one of (1) to (6) above, wherein the thickness of the gallium nitride compound semiconductor laminate is 1 μm to 1000 μm.
(8) The LED package as described in any one of (1) to (7) above, wherein the thickness of the gallium nitride compound semiconductor laminate is 5 μm to 100 μm.
(9) The LED package as described in any one of (1) to (8) above, wherein the thickness of the gallium nitride compound semiconductor laminate is 10 μm to 50 μm.

(10) The LED package according to any one of (1) to (9) above, wherein the size (layer plane) of the gallium nitride compound semiconductor laminate is 200 μm square to 5 mm square.
(11) The LED package according to any one of (1) to (10) above, wherein the size (layer plane) of the gallium nitride compound semiconductor laminate is 200 μm square to 2 mm square.
(12) The LED package according to any one of (1) to (11) above, wherein the size (layer plane) of the gallium nitride compound semiconductor laminate is 500 μm square to 2 mm square.
(13) The phosphor according to any one of (1) to (12), wherein the phosphor is at least one selected from the group consisting of YAG, TAG, BAM, ZnS, SiAlON (sialon), and silicate. LED package.

(14) The LED package according to any one of (1) to (13), wherein the phosphor is dispersed in a resin and provided in the light emitting element.
(15) The resin according to (14), wherein the resin is at least one selected from the group consisting of (meth) acrylic acid resins, epoxy resins, urethane cross-linked resins, UV curable resins, urea resins, and silicone resins. LED package.
(16) The LED package according to any one of (1) to (15), which is sealed with a resin.
(17) The above, wherein the sealing resin is at least one selected from the group consisting of (meth) acrylic acid resins, epoxy resins, urethane cross-linked resins, UV curable resins, urea resins, and silicone resins. LED package in any one of 1)-(16).
(18) The LED package according to any one of (1) to (17), wherein the LED package emits white light.

  The gallium nitride compound semiconductor light emitting device of the present invention is an LED package for white or the like including a light emitting device called a top and bottom electrode type and having a structure in which a p electrode and an n electrode are formed on opposite surfaces. Since the upper and lower electrodes are used as a single connection wire, the phosphor can be irradiated with light emitted from the element with high efficiency. In addition, the use of one wire increases the ease of mounting of the device compared to flip-chip mounting, and the substrate is made of a material having good transmittance with respect to the light emission wavelength of the device, or the substrate is removed. Because of the structure, there is an advantage that light emission is not absorbed by the substrate.

Hereinafter, the present invention will be described in detail with reference to the drawings.
FIG. 1 shows a first example of an embodiment of the present invention. The semiconductor stacked body 1 includes a p-type layer 13 composed of a p-contact layer and a p-cladding layer, an active layer 14 composed of a multiple quantum well structure composed of an InGaN well layer and a GaN barrier layer, and an n-type composed of an n-cladding layer and an n-contact layer. It consists of layer 15. The sapphire substrate used for the growth was removed, the other metal electrode 16 was provided on the exposed n contact layer, and one transparent electrode 11 was formed on the p side. The transparent material electrode was ZnO, and the metal electrode was Al / Ti / Au. Reference numeral 12 denotes a bonding pad. The other metal electrode was connected to the n-side lead of the frame lead frame 22. 21 is a gold wire, which connected one electrode to the p-side lead of the lead frame 22.

  FIG. 2 shows a second example of the embodiment of the present invention. The semiconductor stacked body 1 includes a p-type layer 13 composed of a p-contact layer and a p-cladding layer, an active layer 14 composed of a multiple quantum well structure composed of an InGaN well layer and a GaN barrier layer, and an n-type composed of an n-cladding layer and an n-contact layer. It consists of layer 15. In the sapphire substrate 17 used for growth, a missing portion reaching the n-type contact, for example, a hole 18 is formed by wet etching. The other metal electrode 16 is bonded to the substrate. The n contact layer exposed by the perforation and the metal electrode 16 are made conductive by filling the perforation with a conductor. The metal electrode is connected to the wiring portion of the lead frame 22. One transparent electrode 11 was formed on the p side. The missing part can also be provided in the peripheral part of the semiconductor layer. The connection between the metal electrode and the transparent electrode and the lead frame is the same as described above. The transparent material electrode was ITO, and the metal electrode was Cr / Ti / Au. Reference numeral 12 denotes a bonding pad.

FIG. 3 shows a third example of the embodiment of the present invention. The configuration of the semiconductor laminate and the like is the same as in the above example. The sapphire substrate 17 used for the growth was not processed, and a metal electrode 19 made of silver paste was provided on the side surface of the n contact layer exposed by dry etching. The transparent electrode 11 was formed on the p side. The transparent material electrode was a laminated structure of thin films of Pt and Au, and the metal electrode was Ti / Au.
In the present invention, transparency or translucency in a transparent electrode or the like means translucency with respect to light in a wavelength region of 300 to 700 nm.

The above embodiment will be further described below.
The semiconductor crystal laminated structure is preferably a general element structure in which a light emitting layer is laminated between a p layer and an n layer. As a substrate used for crystal growth, an insulating substrate such as sapphire, a gallium nitride compound semiconductor such as GaN, or a conductive substrate such as SiC, Si, ZnO, or Ga 2 O 3 is used.
When a conductive substrate is used as a substrate for crystal growth, electrodes can be formed directly on the substrate used for growth, but substrates such as SiC and Si have a large absorption of light at short wavelengths, so Cannot be extracted efficiently.

An insulating substrate such as sapphire is generally used as a substrate for growing a laminated structure of gallium nitride compound semiconductors. In this case, an electrode cannot be formed on the sapphire substrate. In that case, the substrate can be removed at the interface between the gallium nitride compound crystal and the sapphire substrate according to the first embodiment. As a method for removing the substrate, high power laser light such as excimer laser or carbon dioxide laser is irradiated from the sapphire surface and heat is generated at the interface to peel off the substrate, or chemical polishing is used to remove sapphire. A scraping method or the like can be used.
Alternatively, conduction may be obtained by forming a hole reaching the semiconductor layer in the insulating substrate according to the second embodiment and forming a metal electrode in the hole. As a method for opening the hole, in addition to a method such as chemical polishing, a method of melting an insulating substrate by patterning and wet etching can be used.

The problems with using two wires have already been described. Originally, this problem can be avoided by connecting both electrodes with bumps or solder without using a single wire, but the mounting process becomes complicated.
By using the upper and lower electrodes connected by a single wire, the process of turning the chip upside down in the mounting process becomes unnecessary, and the connection can be made with a wire even if the position is slightly shifted, and the process becomes very simple.
Compared with the case of connecting with two wires, the absorption of short-wavelength light is suppressed to half, and therefore, a commonly used gold wire may be used. However, for the purpose of further suppressing the absorption of short wavelength light, it is more desirable to use an Al wire or a wire in which a metal having a high reflectance is attached to the outside of the gold wire.

Compared with a structure in which both electrodes are formed on the same surface by forming an electrode on the surface opposite to one surface, such as connection of n-electrodes with holes in the substrate or connection by peeling off the substrate. Thus, the cross-sectional area of the current path can be increased, and the voltage can be reduced. In a chip with a low voltage, since the amount of heat generation can be further suppressed, there is an effect of suppressing deterioration due to aging.
In addition to employing the upper and lower electrodes, the method of contacting the electrode with the side surface of the n layer according to the third embodiment can be used as a method of connecting the chip to the lead frame with one wire. In this case, it is necessary to form an electrode on the side surface of the n layer after dividing the chip. As a method for forming the electrode, a general method such as vapor deposition on the side surface described in Patent Document 3 can be used without any problem. As another example, the surface of the p layer may be completely covered with a protective film, and the chip may be immersed in silver paste or the like and brought into contact with the side surface.

  It is desirable to connect the lead frame and the n-electrode by a method such as bumping or soldering. In order to improve heat dissipation, it is desirable that the material of the lead frame is a material having good thermal conductivity. For example, a lead such as Al or Cu is arranged on a ceramic substrate. In addition, you may use what printed the wiring on the ceramic. A fin structure or the like for heat dissipation may be built in a portion other than the mounting surface of the lead frame.

A thinner semiconductor laminate (chip) is desirable because the ohmic component that contributes to the driving voltage is reduced, but if it is too thin, the handling property is deteriorated. The thickness is preferably about 1 μm to 1000 μm, and more preferably about 5 μm to 100 μm. More desirably, the thickness is about 10 μm to 50 μm.
As the size of the chip (planar surface of the laminated body) is larger, the ohmic component contributing to the driving voltage can be reduced. The size is desirably 200 μm square to 5 mm square, and more desirably 200 μm to 2 mm square and 500 μm square to 2 mm square.

The n-type semiconductor layer, the light emitting layer, and the p-type semiconductor layer are well known in various structures, and these well-known layers can be used without any limitation.
As the gallium nitride compound semiconductors constituting them, semiconductors having various compositions represented by the general formula Al x In y Ga 1-xy N (0 ≦ x <1, 0 ≦ y <1, 0 ≦ x + y <1) are used. As a well-known gallium nitride compound semiconductor constituting the n-type semiconductor layer, the light emitting layer and the p-type semiconductor layer in the present invention, the general formula Al x In y Ga 1-xy N (0 ≦ x <1, 0 ≦ Semiconductors having various compositions represented by y <1, 0 ≦ x + y <1) can be used without any limitation.

For the purpose of extracting light in this direction, the electrode bonded with the gold wire is preferably a light-transmitting electrode or a structure having only the bonding electrode.
When a transparent electrode is employed, a metal thin film or a conductive oxide can be used. For example, ITO, aluminum oxide zinc, fluorine-doped tin oxide, titanium oxide, zinc sulfide, bismuth oxide, magnesium oxide, or a thin film such as aluminum, nickel, titanium, gold, silver, or chromium can be used. For example, it is also possible to use a metal layer structure such as a two-layer structure of Au and NiO, a two-layer structure of Pt and Au, or a conductive oxide such as ITO from the semiconductor side.
In the present invention, the lead frame is formed by forming leads for n-pole and p-pole connection on an insulating base, or by providing wiring for connecting n-pole and p-pole on an insulating base.

Known materials and structures can be used as bonding pads for supplying current to the transparent electrode.
Bonding pads are often multi-layered. In this case, the material on the bottom surface is Cr, Al, Ti, platinum group metals such as Pt, Rh, Ru, Ir, Ag, and at least one of these metals. It is an alloy containing. Among them, Cr, Al, Ag, Pt and alloys containing at least one of these metals are common as electrode materials, and are excellent in terms of easy availability and handling. Yes.
Further, the layer formed on the lowermost layer of the bonding pad electrode has a role of enhancing the strength of the entire bonding pad electrode. For this reason, it is necessary to use a relatively strong metal material or to sufficiently increase the film thickness. Desirable materials are Ti, Cr or Al. Among these, Ti is desirable in terms of material strength. When such a function is given, this layer is called a barrier layer.

The uppermost layer of the bonding pad electrode is preferably made of a material having good adhesion to the bonding ball. Gold is often used for the bonding balls, and Au and Al are known as metals having good adhesion to the gold balls. Of these, gold is particularly desirable. The thickness of the uppermost layer is desirably 50 to 1000 nm, and more desirably 100 to 500 nm. If it is too thin, the adhesion to the bonding ball will be poor, and if it is too thick, no particular advantage will be produced, and only the cost will increase.
Even when an electrode having only a bonding pad is employed, the metal materials listed above can be used without any problem. Needless to say, it is desirable to select a material having a strong connection strength with a semiconductor.
In the case of a structure including only bonding pads, it is desirable to increase the light extraction area by performing a roughening process on the surface on which no electrode is formed.

The material of the electrode 16 formed on the n-plane of the chip having a structure in which the substrate is peeled off or a structure having a hole in the substrate needs to be appropriately selected so that an excellent electrical contact can be made. . For example, when an electrode is formed on n-type gallium nitride, Al, Ti, Cr or the like is desirable, and in the case of p-type gallium nitride, Ni, Au, Pt or the like is desirable. Since the metal electrode can achieve good contact on the n-type gallium nitride side, it is desirable to form the metal electrode on the n-side. The example of FIGS. 1 and 2 has a two-layer structure of Ti / Au.
On the other hand, it is desirable that the material of the n-electrode has a high reflectance at the wavelength of emitted light. From this viewpoint, Al is excellent as the metal that contacts the semiconductor. The metal electrode can be formed by using an existing method such as sputtering, vapor deposition, or plating. In addition, solder can be packed during drilling.

Even when the side electrode is employed, the above metal material can be used without any problem.
In addition, in order to form an electrode on the n side surface by a method other than vapor deposition, a method of adhering and solidifying a liquid such as silver paste or solder may be employed. By adopting this method, it is possible to cover not only one surface of the n side surface but also the entire surface, so that contact over a wider area can be achieved.

  In order to obtain white light from a light emitting element, it is common to disperse phosphors that emit light of different wavelengths in resin while using light emitted from the chip as excitation light. Although it is desirable for the phosphor to be in a region as close as possible to the chip, such dispersion can be naturally obtained without intention by sedimentation of the phosphor. However, although the phosphor is inevitably dispersed at a position away from the chip, the present invention can irradiate the phosphor with excitation light without waste even in such a dispersion.

  As a technology utilizing wavelength conversion, a technology for obtaining blue light by emitting blue light from a gallium nitride-based light emitting element to a phosphor emitting yellow light and mixing blue and yellow, or obtaining white light, or For example, there is a technique in which ultraviolet light is emitted from a gallium nitride-based light emitting element, and the light is emitted by irradiating phosphors emitting red, green, and blue light to emit white light. In addition, the phosphor emitting blue light from the gallium nitride-based light emitting device is irradiated and mixed with blue and red to obtain pink light emission, or the gallium nitride light emitting device There is a technique for obtaining green by irradiating a phosphor emitting green light with ultraviolet rays from

In the present invention, an existing phosphor can be used without limitation. For example, YAG (Yttrium Aluminium Garnet), TAG (Terium Aluminium Garnet), BAM (Barium Aluminium Magnesium Oxide), ZnS, SiAlON (Sialon), silicate, and the like.
These phosphors are formed, for example, so as to cover the light emitting element as shown in the figure by being dispersed in a resin. As the resin, (meth) acrylic acid resin, epoxy resin, urethane cross-linked resin, UV curable resin, urea resin, silicone resin and the like are preferable. . Most desirable is a silicone resin.

  Further, the entire element is sealed with resin. As a resin for sealing, it goes without saying that the durability against temperature, humidity and the like is high, and in addition to that, it is desired that deterioration due to light emission in a short wavelength region from a gallium nitride material is small. Moreover, it is better that there is little deformation or volume change when solidifying. From such a viewpoint, as described above, (meth) acrylic resin, epoxy resin, urethane cross-linked resin, UV curable resin, urea resin, silicone resin, and the like are desirable.

The growth method of the above gallium nitride compound semiconductor is not particularly limited, and is a group III nitride semiconductor such as MOCVD (metal organic chemical vapor deposition), HVPE (hydride vapor deposition), MBE (molecular beam epitaxy), etc. All methods known to grow can be applied. A preferred growth method is the MOCVD method from the viewpoint of film thickness controllability and mass productivity. In the MOCVD method, hydrogen (H 2 ) or nitrogen (N 2 ) is used as a carrier gas, trimethyl gallium (TMG) or triethyl gallium (TEG) is used as a Ga source as a group III source, and trimethyl aluminum (TMA) or triethyl aluminum is used as an Al source. (TEA), trimethylindium (TMI) or triethylindium (TEI) as an In source, ammonia (NH 3 ), hydrazine (N 2 H 4 ), or the like as an N source that is a group V source. As dopants, monosilane (SiH 4 ) or disilane (Si 2 H 6 ) is used as the Si raw material for n-type, germane (GeH 4 ) is used as the Ge raw material, and biscyclohexane is used as the Mg raw material for the p-type. Pentadienyl magnesium (Cp 2 Mg) or bisethylcyclopentadienyl magnesium ((EtCp) 2 Mg) is used.

  EXAMPLES Next, although an Example demonstrates this invention still in detail, this invention is not limited only to these Examples.

Example 1
FIG. 1 is a schematic view showing a cross section of a gallium nitride-based compound semiconductor light emitting device manufactured in this example. In the semiconductor laminated structure, a gallium nitride compound semiconductor layer was laminated on a substrate made of sapphire via a buffer layer made of AlN, and then the sapphire substrate was peeled off using a laser peeling machine. The gallium nitride compound semiconductor layer is composed of an n-type layer 15 composed of a Ge-doped n-type GaN contact layer having a thickness of 10 μm and a Si-doped n-type In 0.1 Ga 0.9 N cladding layer having a thickness of 0.02 μm, and a Si-doped layer having a thickness of 16 nm. A GaN barrier layer and a 2.5 nm thick In 0.06 Ga 0.94 N well layer are stacked five times, and finally a light emitting layer 14 having a multiple quantum well structure provided with a barrier layer, and a 0.01 μm thick Mg-doped p-type The p-type layer 13 is composed of an Al 0.07 Ga 0.93 N clad layer and a Mg-doped p-type Al 0.02 Ga 0.98 N contact layer having a thickness of 0.18 μm.
On the p-type AlGaN contact layer, a transparent electrode layer 11 made of ITO having a thickness of 200 nm and a bonding pad of Au / Ti / Al / Ti / Au5 layer structure (thickness is 50/20/10/100/200 nm, respectively) A positive electrode composed of 12 was formed. On the n-type GaN contact layer, a negative electrode 16 having a two-layer structure of Ti / Au was formed. The light extraction surface was the ITO electrode side.

In this structure, the carrier concentration of the n-type GaN contact layer is 1 × 10 19 cm −3 , the Si doping amount of the GaN barrier layer is 1 × 10 17 cm −3 , and the carrier concentration of the p-type AlGaN contact layer is 5 is a × 10 18 cm -3, Mg doping amount of p-type AlGaN cladding layer was 5 × 10 19 cm -3.
Using this chip, a package called a top package was produced. The chip was fixed to the lead frame 22 with solder with the n-electrode 16 of the chip down, and at the same time conductive. Further, wire bonding was performed with a gold wire 21 to the bonding pad 12 on the upper surface. A glass epoxy resin 24 containing a silicate phosphor was injected into the frame and heat-treated to be solidified. Furthermore, the whole was sealed with glass epoxy 25 containing nothing.

Lamination of the gallium nitride-based compound semiconductor layers (13 to 15 in FIG. 1) was performed by MOCVD under normal conditions well known in the technical field. Moreover, the positive electrode and the negative electrode were formed in the following procedure.
First, the back surface of the sapphire substrate was polished and made transparent, and an excimer laser was scanned and irradiated to generate heat between the sapphire substrate and the GaN layer, and the sapphire substrate was peeled off. Prior to peeling, a Si substrate for supporting was adhered to the p-layer surface.

Next, a negative electrode was formed on the exposed n-type GaN contact layer by the following procedure. On the exposed n-type layer, a negative electrode composed of Cr of 1 μm, Ti of 100 μm, and Au of 1 μm was formed in this order from the semiconductor side by a commonly used vacuum deposition method.
After forming the electrode film on the n side, the Si substrate was separated by dissolving the adhesive with a solvent. Thereafter, the substrate was held with the n-electrode film for handling.
Next, a contact metal layer made of ITO was formed on the p-type AlGaN contact layer. In the formation of the contact metal layer, the substrate was introduced into a vacuum sputtering apparatus, and an ITO film was laminated to 500 nm. Thereafter, bonding pads having an Au / Ti / Al / Ti / Au 5-layer structure (thicknesses of 50/20/10/100/200 nm, respectively) were formed on ITO.

The wafer on which the positive electrode and the negative electrode were formed in this manner was cut from the n-electrode side using a dicer and separated into 350 μm square chips. Subsequently, when these chips were energized with a probe needle and the forward voltage was measured at a current application value of 20 mA, it was 2.95V.
Then, this chip was mounted. Eutectic solder paste made of AuSn is applied on the n-electrode surface, an alumina ceramic substrate on which metal wiring is patterned is connected from the back surface, connected to the negative electrode portion of the wiring, and heated in a reflow furnace, The chip was fixed to the lead frame.

Furthermore, wire bonding was performed using a gold wire on a bonding pad on the ITO electrode on the upper surface. The other side of the wire was connected to the positive electrode part of the wiring.
Thereafter, a glass epoxy resin containing a silicate phosphor was injected, and held in a 150-degree annealing furnace for 6 hours to be solidified. Sedimentation of the phosphor occurred during solidification, and the phosphor distribution was more distributed in a region closer to the chip.
The amount of the phosphor was measured in advance so as to exhibit a white color when excited by light from the LED included in the package.
Furthermore, a transparent glass epoxy resin containing nothing was poured onto the molded product and molded into an LED package.
Through the above operation, an LED package having a structure as shown in a sectional view in FIG. 1 was produced. The chip emitted white light by passing current through the wiring. The driving voltage was 3.0 V, and the light emission efficiency was good at 70 lm / W.

(Example 2)
In Example 2, a chip in which a sapphire substrate 17 is perforated 18 and the n-electrode 15 is conducted is used, except that YAG: Ce is used as the phosphor and silicone resin is used as the resin. As shown in FIG. 2, an LED package having a cross section shown in FIG. 2 was produced.
A contact layer of Al was formed in the hole 18 by vapor deposition, and solder was packed therein, thereby bringing out a contact with the lead on the substrate side.
The chip emitted white light by passing current through the wiring. The driving voltage was 3.2 V, and the light emission efficiency was as good as 67 lm / W.

(Example 3)
In Example 3, most of the steps are the same as those in Example 1 except that a chip made conductive with silver paste 19 is used on the side surface of the n layer of the chip with sapphire substrate 17 and SiAlON phosphor is used as the phosphor. As the same, an LED package having a cross section shown in FIG. 3 was produced.
The chip emitted white light by passing current through the wiring. The driving voltage was 3.4 V, and the light emission efficiency was good at 6 lm / W.

  Since the gallium nitride-based compound semiconductor light-emitting device of the present invention has excellent luminous efficiency, a high-intensity LED lamp can be produced from this light-emitting device, and is useful for illumination use, display use, and backlight use.

1 is a schematic view showing a mounting body (package) of a gallium nitride-based compound semiconductor light-emitting element of the present invention produced in Example 1. FIG. 6 is a schematic view of a mounting body (package) of the gallium nitride-based compound semiconductor light-emitting element of the present invention manufactured in Example 2. FIG. 6 is a schematic view of a mounting body (package) of a gallium nitride-based compound semiconductor light-emitting element of the present invention produced in Example 3. FIG.

Explanation of symbols

1 Semiconductor chip 11 Transparent electrode (p side)
12 Bonding pad 13 P-type layer 14 Active layer 15 N-type layer 16 Metal electrode (n side)
17 Insulating substrate 18 Substrate perforation 19 Silver paste 2 LED package 21 Bonding wire 22 Lead frame 22a Lead
23 reflector 24 resin in which phosphor is dispersed 25 resin

Claims (18)

  1.   In an LED package including a light emitting element and a phosphor including a laminate of a gallium nitride compound semiconductor, one electrode of the light emitting element and the lead frame are connected by a wire, and the other electrode and the lead frame are connected by a non-wire connection. LED package characterized by that.
  2.   In an LED package including a light emitting element and a phosphor including a laminate of a gallium nitride compound semiconductor, one electrode of the light emitting element and a lead frame are connected by a wire, and the other electrode and the lead frame are connected by a substrate. An LED package comprising: bonding an electrode formed on a semiconductor layer removed and exposed to a lead frame.
  3.   In an LED package including a light emitting element and a phosphor including a laminate of gallium nitride compound semiconductor, one electrode of the light emitting element and the lead frame are connected with a wire, and the other electrode and the lead frame are connected with an insulating property. An LED package comprising: a substrate having a missing portion that reaches the semiconductor layer; and a conductor filled in the missing portion, the semiconductor layer and the electrode are electrically connected, and the electrode is connected to a lead frame.
  4.   The LED package according to claim 3, wherein the missing portion is a perforation.
  5.   In an LED package including a light emitting element including a laminate of a gallium nitride compound semiconductor and a phosphor, one electrode of the light emitting element and a lead frame are connected by a wire, and the other electrode and the lead frame are connected by a light emitting layer. An LED package comprising: a lead frame connected to a side surface of a semiconductor layer opposite to the one electrode with a conductor interposed therebetween.
  6. The substrate used for the growth of the gallium nitride compound semiconductor laminate is an insulating substrate such as sapphire, a gallium nitride compound semiconductor substrate such as GaN, or a conductive substrate such as SiC, Si, ZnO, or Ga 2 O 3 The LED package according to claim 1, which is selected from the group consisting of:
  7.   The thickness of the laminated body of a gallium nitride compound semiconductor is 1 μm to 1000 μm, The LED package according to claim 1.
  8.   The LED package according to any one of claims 1 to 7, wherein a thickness of the gallium nitride compound semiconductor laminate is 5 µm to 100 µm.
  9.   9. The LED package according to claim 1, wherein the gallium nitride compound semiconductor laminate has a thickness of 10 μm to 50 μm.
  10.   10. The LED package according to claim 1, wherein the gallium nitride compound semiconductor laminate has a size (layer plane) of 200 μm square to 5 mm square.
  11.   11. The LED package according to claim 1, wherein the gallium nitride compound semiconductor laminate has a size (layer plane) of 200 μm square to 2 mm square.
  12.   12. The LED package according to claim 1, wherein the gallium nitride compound semiconductor laminate has a size (layer plane) of 500 μm square to 2 mm square.
  13.   The LED package according to any one of claims 1 to 12, wherein the phosphor is at least one selected from the group consisting of YAG, TAG, BAM, ZnS, SiAlON (sialon), and silicate.
  14.   The LED package according to claim 1, wherein the phosphor is dispersed in a resin and provided in the light emitting element.
  15.   The LED package according to claim 14, wherein the resin is at least one selected from the group consisting of a (meth) acrylic acid resin, an epoxy resin, a urethane cross-linked resin, a UV curable resin, a urea resin, and a silicone resin.
  16.   The LED package according to any one of claims 1 to 15, which is sealed with a resin.
  17.   The sealing resin is at least one selected from the group consisting of (meth) acrylic acid resins, epoxy resins, urethane cross-linked resins, UV curable resins, urea resins, and silicone resins. LED package according to any one of the above.
  18. The LED package according to claim 1, wherein the LED package emits white light.
JP2005251537A 2005-08-31 2005-08-31 Led package Pending JP2007067184A (en)

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