JP2007042985A - Gallium-nitride-based compound semiconductor light-emitting device and packaging body thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a gallium-nitride-based compound semiconductor light-emitting device that has improved power-light conversion efficiency and generates small heat, and can extract emission to the outside efficiently. <P>SOLUTION: The light-emitting device contains a laminate of a gallium-nitride-based compound semiconductor. The laminate of the light-emitting device has a first surface and a second one that opposes the first one, and the second surface is a light extraction direction. A metal electrode is installed on the first surface, and an electrode made of a conductive, transparent material is installed on the second surface. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a gallium nitride-based compound semiconductor light-emitting device, and more particularly to a light-emitting device that is excellent in power-light conversion efficiency and can efficiently extract emitted light to the outside, and a mounted body thereof.

In recent years, GaN-based compound semiconductor materials have attracted attention as semiconductor materials for short wavelength light emitting devices. GaN-based compound semiconductors include sapphire single crystals, various oxides and III-V compounds as substrates, and metalorganic vapor phase chemical reaction method (MOCVD method) and molecular beam epitaxy method (MBE method). And so on.
In a light-emitting element using a GaN-based compound semiconductor material, since sapphire widely used as a substrate is insulative, it often has a structure in which both n-pole and p-pole electrodes are formed on the same surface. It was.
However, in an element structure in which two electrodes are formed on the same surface, it is necessary to flow a current through the semiconductor layer in the lateral direction, and the ohmic resistance is one factor that prevents the drive voltage from being lowered.

On the other hand, there is an element using a conductive substrate such as SiC, and a structure having electrodes on both one surface of the element and the other surface (referred to as an upper and lower electrode structure) has been realized. Yes. (See Patent Document 1)
Further, in recent years, a technique has been developed in which a sapphire substrate is peeled to expose a layer opposite to the surface of the gallium nitride crystal, and an electrode is formed thereon to realize an upper and lower electrode structure.
In such a structure of the upper and lower electrodes, the distance through which current flows can be suppressed small, so that the ohmic resistance is reduced and the heat generation of the element can be suppressed.

However, in the case of using an element having such an upper and lower electrode structure, since the light extraction surface is mounted upward, it is necessary to connect to the surface side by bonding. If bonding is performed on the light extraction surface, there is a demerit that the bonding electrode pad or wire prevents the light from traveling and drops the light extraction or deteriorates the light distribution.
In order to eliminate this disadvantage, a structure has been proposed in which light emission is extracted by forming a transparent electrode on the substrate side of the semiconductor layer. (See Patent Document 2) In addition, a technique for mounting a semiconductor element having a transparent substrate on a transparent substrate is also disclosed. (See Patent Document 3)
However, in these structures, two electrodes are formed on the opposite side of the substrate, and the driving voltage cannot be lowered sufficiently for the reasons described above.
Special table 10-506234, etc. JP-A-3-183173 JP2001-44516

  SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems, to produce a gallium nitride compound semiconductor light-emitting element that is excellent in power-light conversion efficiency, generates little heat, and can efficiently extract emitted light to the outside, and its mounting body. Is to provide.

The present invention has been made to solve the above-described problems, and includes the following inventions.
(1) In a light emitting device including a laminate of gallium nitride-based compound semiconductors, the laminate has a first surface and a second surface opposite to the first surface, and a metal electrode is provided on the first surface. The gallium nitride compound semiconductor light emitting device, wherein the second surface is a light extraction direction, and an electrode made of a conductive and transparent material is provided on the second surface. .
(2) The gallium nitride-based compound semiconductor light-emitting element according to (1) above, wherein the electrode formed on the first surface is an electrode for bonding.
(3) The gallium nitride-based compound semiconductor light-emitting element according to (1) or (2) above, wherein the transparent material formed on the second surface is ITO or ZnO.
(4) In a light emitting device including a laminate of gallium nitride compound semiconductor, the laminate has a first surface and a second surface opposite to the first surface, and a metal electrode is provided on the first surface. The second surface is provided with an electrode made of a conductive and transparent material, the transparent surface is provided on the second surface, and light is extracted to the outside through the base. A mounting body of a gallium nitride-based compound semiconductor light-emitting element, which is characterized.

(5) In a light emitting device including a stack of gallium nitride compound semiconductors, a plurality of stacks are arranged in parallel. Each stack has a first surface and a second surface opposite to the first surface. A metal electrode is disposed on the surface of the substrate, an electrode made of a conductive and transparent material is disposed on the second surface, and a transparent substrate is disposed on the second surface. A gallium nitride-based compound semiconductor light-emitting element mounting body characterized by having a structure for extracting light through the outside.
(6) The mounted body of gallium nitride compound semiconductor light-emitting elements according to (5) above, wherein the plurality of stacked bodies have different emission colors.
(7) The mounted body of a gallium nitride-based compound semiconductor light-emitting element according to any one of (4) to (6), wherein the base is glass.
(8) The mounted body of a gallium nitride compound semiconductor light-emitting element according to any one of (4) to (6), wherein the base is made of a synthetic resin.

(9) The gallium nitride-based compound semiconductor light-emitting element according to any one of (4) to (8), wherein a power feeding unit is provided between the electrode on the second surface and the substrate. Implementation body.
(10) The mounted body of a gallium nitride-based compound semiconductor light-emitting element according to any one of (4) to (9), wherein a base is bonded to the first surface.
(11) The mounting body for a gallium nitride-based compound semiconductor light-emitting element according to the above (10), wherein the base is made of metal.
(12) The mounted body of a gallium nitride-based compound semiconductor light-emitting element according to the above (11), wherein the metal base is a heat dissipation base.
(13) The mounting body for a gallium nitride-based compound semiconductor light-emitting element according to (10) above, wherein the base of the first surface is made of ceramics.

(14) The gallium nitride-based compound semiconductor light-emitting device according to any one of (8) to (11), wherein a power feeding unit is provided between the electrode on the first surface and the substrate. Implementation body.
(15) In a method for manufacturing a light-emitting element including a laminate of gallium nitride compound semiconductors, an electrode made of a conductive and transparent material is provided on the second surface in the light extraction direction of the laminate, and the electrode A gallium nitride-based compound semiconductor characterized in that a transparent substrate is bonded on top using a transparent adhesive, a metal electrode is disposed on the first surface of the laminate, and the substrate is disposed on the electrode. Mounting method of light emitting element.
(16) In the method for manufacturing a light emitting device including a gallium nitride compound semiconductor laminate, a plurality of the laminates are arranged in parallel, and the second surface which is the light extraction direction of each laminate is electrically conductive. In addition, an electrode made of a transparent material is installed, a transparent substrate is bonded on the electrode using a transparent adhesive, a metal electrode is installed on the first surface of each laminate, and the substrate is installed on the electrode A mounting method for a gallium nitride-based compound semiconductor light-emitting device, characterized in that:

(17) The method for mounting a gallium nitride-based compound semiconductor light-emitting element according to the above (16), wherein the plurality of stacked bodies have different emission colors.
(18) The method for mounting a gallium nitride-based compound semiconductor light-emitting element according to any one of (15) to (17), wherein the conductive and transparent material is ITO or ZnO.
(19) The method for mounting a gallium nitride-based compound semiconductor light-emitting element according to any one of (15) to (18), wherein a power feeding unit is provided between the electrode on the second surface and the substrate.

(20) The method for mounting a gallium nitride-based compound semiconductor light-emitting element according to any one of the above (15) to (19), wherein the transparent substrate on the second surface is glass.
(21) The method for mounting a gallium nitride-based compound semiconductor light-emitting element according to any one of (15) to (20), wherein the transparent substrate on the second surface is a synthetic resin.
(22) The method for mounting a gallium nitride-based compound semiconductor light-emitting element according to any one of (15) to (21), wherein a power feeding unit is provided between the electrode on the first surface and the substrate.

(23) The gallium nitride-based compound semiconductor according to any one of (15) to (22), wherein a substrate having a power feeding portion is bonded onto the electrode on the first surface using solder or bumps. Mounting method of light emitting element.
(24) The method for mounting a gallium nitride-based compound semiconductor light-emitting element according to any one of (15) to (23), wherein the base of the first surface is a metal.
(25) The method for mounting a gallium nitride-based compound semiconductor light-emitting element according to any one of (15) to (23), wherein the base of the first surface is ceramics.
(26) A light emitting device comprising a combination of the light emitting device according to the above (1) to (14) and a phosphor.
(27) A lighting fixture using the light emitting device according to (26).

The gallium nitride-based compound semiconductor light-emitting device of the present invention has a structure called a top and bottom electrode type, in which a p-electrode and an n-electrode are formed on opposite surfaces. By using one electrode as a metal electrode, heat dissipation can be improved, and by using the other electrode as a transparent conductive material, extraction of light emission can be improved.
Further, by mounting this type of element on the transparent substrate on the transparent electrode side, light can be extracted outside without being obstructed by the wire.
Furthermore, heat dissipation can be improved by mounting a metal electrode on a metal substrate.

Hereinafter, the present invention will be described in detail with reference to the drawings.
FIG. 1 shows an example of an embodiment of the present invention. The semiconductor stacked body 1 includes a p-contact layer 12, a p-cladding layer 13, an active layer 14 having a multiple quantum well structure including an InGaN well layer and a GaN barrier layer, an n-cladding layer 15, and an n-contact layer 16. The substrate used for the growth was removed, and the metal electrode 17 was formed on the exposed n contact layer, and the transparent electrode 11 was formed on the p side. The transparent material electrode was ITO, and the metal electrode was Ti / Au. In the present invention, the surface on the transparent electrode side in the light extraction direction of the semiconductor laminate is the second surface, and the opposite surface is the first surface. In the illustrated example, the p-side is the second surface, but the n-side can be the second surface.
In the present invention, the term “transparent or translucent” means being translucent to light in the wavelength region of 300 to 600 nm.

The semiconductor crystal laminated structure is preferably a general element structure in which a light emitting layer is laminated between a p layer and an n layer. As a substrate used for crystal growth, an insulating substrate such as sapphire, a gallium nitride compound semiconductor such as GaN, or a conductive substrate such as SiC, Si, ZnO, or Ga ₂ O ₃ is used.
When a conductive substrate is used as a substrate for crystal growth, an electrode can be formed directly on the substrate used for growth.
However, an insulating substrate such as sapphire is generally used as a substrate for growing a laminated structure of gallium nitride compound semiconductors. In this case, an electrode cannot be formed on the sapphire substrate. In that case, the substrate can be removed at the interface between the gallium nitride compound crystal and the sapphire substrate. As a method for removing the substrate, high power laser light such as excimer laser or carbon dioxide laser is irradiated from the sapphire surface and heat is generated at the interface to peel off the substrate, or chemical polishing is used to remove sapphire. A scraping method or the like can be used.
Alternatively, conduction may be obtained by making a hole penetrating the semiconductor layer in an insulating substrate and forming a metal electrode in this hole. As a method for opening the hole, in addition to a method such as chemical polishing, a method of melting an insulating substrate by patterning and wet etching can be used.

A thinner semiconductor laminate (chip) is desirable because the ohmic component that contributes to the driving voltage is reduced, but if it is too thin, the handling property is deteriorated. The thickness is preferably about 1 μm to 1000 μm, and more preferably about 5 μm to 100 μm. More desirably, the thickness is about 10 μm to 50 μm.
The larger the chip size, the smaller the ohmic component that contributes to the drive voltage. The size is preferably from 200 μm square to 5 mm square, more preferably 2 mm square or less, and even more preferably from 500 μm square to 2 mm square.

The n-type semiconductor layer, the light emitting layer, and the p-type semiconductor layer are well known in various structures, and these well-known layers can be used without any limitation.
As the gallium nitride compound semiconductors constituting them, semiconductors having various compositions represented by the general formula Al _x In _y Ga _1-xy N (0 ≦ x <1, 0 ≦ y <1, 0 ≦ x + y <1) are used. As a well-known gallium nitride compound semiconductor constituting the n-type semiconductor layer, the light emitting layer and the p-type semiconductor layer in the present invention, the general formula Al _x In _y Ga _1-xy N (0 ≦ x <1, 0 ≦ Semiconductors having various compositions represented by y <1, 0 ≦ x + y <1) can be used without any limitation.

A transparent electrode is formed on one surface (light extraction surface) of the chip. The surface on which the transparent electrode is formed may be an n-layer or a p-layer, but preferably has ohmic properties. ITO, ZnO, etc. are known as the material of the transparent electrode. In addition, a conductive resin may be used. However, ITO is well known as an electrode for gallium nitride compound semiconductors and is easy to use. When ITO is used as a transparent electrode, the electrode forming surface is preferably p-type. ZnO is also a promising transparent electrode material. This material is inexpensive and easy to handle.
The resistivity of the transparent conductive film constituting the transparent electrode is desirably about 1 × 10 ⁻¹ Ω / cm to about 1 × 10 ⁻⁶ Ω / cm. If it is higher than this, the heat generated by ohmic heat becomes intense, and the drive voltage also increases. If it is made lower than this, in many cases, the transmittance will be lowered, and the extraction of emitted light will be worsened. More desirably, 1 × 10 ⁻³ Ω / cm to 1 × 10 ⁻⁵ Ω / cm, particularly 1 × 10 ⁻⁴ Ω / cm to 1 × 10 ⁻⁵ Ω / cm is preferable. When using a transparent material having a low resistivity, the film thickness of the transparent conductive film may be appropriately selected.
For the formation of the conductive transparent material, existing methods such as sputtering and vapor deposition can be used. In addition, it is also possible to use a technique in which a highly metallic material is formed by these techniques and is oxidized later.

A metallic electrode 17 is formed on the other surface of the chip. The material should be chosen appropriately so that good electrical contact can be made. For example, when an electrode is formed on n-type gallium nitride, Al, Ti, Cr or the like is desirable, and in the case of p-type gallium nitride, Ni, Au, Pt or the like is desirable. Since the metal electrode can achieve good contact on the n-type gallium nitride side, it is desirable to form the metal electrode on the n-side. The example in the figure is a two-layer structure of Ti / Au.
On the other hand, it is desirable that the metal electrode has a high reflectance at the wavelength of light emitted from the material that contacts the n layer. From this viewpoint, Al is excellent as the metal that contacts the semiconductor. The metal electrode can be formed by using an existing method such as sputtering, vapor deposition, or plating.

The element thus manufactured can be energized to the electrode and can be used as a light-emitting element, but preferably a base or the like is provided on the element.
As the base, it is desirable to use a transparent base on the transparent electrode side in order to extract light from the transparent electrode side. For example, it is possible to use a substrate in which a film such as ITO is formed on a glass substrate that is commercially available for liquid crystal applications or the like, or it may be formed by forming a film such as ITO on a transparent plate of a resin material. . Adhesion is performed with a transparent and conductive material. A conductive resin may be used, or a solution obtained by dissolving a conductive oxide such as ITO in a solvent may be sandwiched and heated to be bonded.

  In order to pass a current through the chip, a power supply unit such as wiring can be provided on the transparent substrate. The power feeding portion can be formed of a wiring or a conductive film patterned with a conductive material. The conductive material includes a transparent oxide in addition to a metal.

In order to realize heat dissipation from the metal electrode side, the metal electrode is preferably connected to a base having good thermal conductivity. The base having good thermal conductivity can be made of metal or ceramic.
In order to pass a current through the metal electrode, a power feeding part such as a wiring can be provided between the electrode and the substrate. For this, a substrate having wiring or the like may be used. In particular, when the substrate is made of ceramic, it is necessary to provide wiring such as metal. The method for forming the power feeding part is the same as that on the transparent electrode side.
It is desirable to connect the substrate and the electrode by a method such as bumping or soldering. The connection with the gold wire is not desirable because it impairs heat dissipation. However, when the amount of current to be used is small, the amount of heat generation is also small, so it may be mounted using a gold wire.
In order to improve heat dissipation, it is desirable that the base material is a material having good thermal conductivity. For example, Al or Cu. A fin structure or the like for heat dissipation may be built in a portion other than the mounting surface of the base.

  FIG. 2 shows a concept of an element package in which a chip is sandwiched between a transparent substrate and a ceramic substrate. The transparent electrode 11 formed on the p side is bonded to the glass substrate 26 on which the wiring 24 made of ITO is applied using the ITO adhesive 25, and the metal electrode 17 formed on the n side is made of metal with AuSn solder 22 Bonded to the ceramic substrate 23 provided with the wiring 21. FIG. 2 shows an example in which three light emitting elements are arranged in parallel.

The space between the element sandwiched between the transparent substrate and the substrate such as ceramics can be sealed with resin or the like. Sealing with resin can prevent oxidation due to heat generation of the element and prevent deterioration of the element due to ingress of moisture.
As a resin for sealing, it goes without saying that the durability against temperature, humidity and the like is high, and in addition to that, it is desired that deterioration due to light emission in a short wavelength region from a gallium nitride material is small. Moreover, it is better that there is little deformation or volume change when solidifying. From such a viewpoint, (meth) acrylic acid resin, epoxy resin, urethane cross-linked resin, UV curable resin, urea resin, silicone resin and the like are desirable.

  In addition, a region including a phosphor can be formed in this structure. 2. Description of the Related Art A technique for converting a wavelength by applying short-wavelength light from a GaN-based compound semiconductor material to a phosphor is widely used. As a technology utilizing wavelength conversion, a technology for obtaining blue light by emitting blue light from a gallium nitride-based light emitting element to a phosphor emitting yellow light and mixing blue and yellow, or obtaining white light, or For example, there is a technique in which ultraviolet light is emitted from a gallium nitride-based light emitting element, and the light is emitted by irradiating phosphors emitting red, green, and blue light to emit white light. In addition, the phosphor emitting blue light from the gallium nitride-based light emitting device is irradiated and mixed with blue and red to obtain pink light emission, or the gallium nitride light emitting device There is a technique for obtaining green by irradiating a phosphor emitting green light with ultraviolet rays from

The region including the phosphor may exist anywhere in this structure. A layer in which the phosphor is dispersed in resin or the like may be formed on the surface opposite to the mounting side of the transparent substrate on which the transparent electrode is mounted, or the phosphor is dispersed in the resin that fills the space between the chips. You can also
Moreover, the area | region containing fluorescent substance may serve as a transparent base | substrate, and may serve as a transparent electrode.

The growth method of the above gallium nitride compound semiconductor is not particularly limited, and is a group III nitride semiconductor such as MOCVD (metal organic chemical vapor deposition), HVPE (hydride vapor deposition), MBE (molecular beam epitaxy), etc. All methods known to grow can be applied. A preferred growth method is the MOCVD method from the viewpoint of film thickness controllability and mass productivity. In the MOCVD method, hydrogen (H ₂ ) or nitrogen (N ₂ ) is used as a carrier gas, trimethyl gallium (TMG) or triethyl gallium (TEG) is used as a Ga source as a group III source, and trimethyl aluminum (TMA) or triethyl aluminum is used as an Al source. (TEA), trimethylindium (TMI) or triethylindium (TEI) as an In source, ammonia (NH ₃ ), hydrazine (N ₂ H ₄ ), or the like as an N source that is a group V source. As dopants, monosilane (SiH ₄ ) or disilane (Si ₂ H ₆ ) is used as the Si raw material for n-type, germane (GeH ₄ ) is used as the Ge raw material, and biscyclohexane is used as the Mg raw material for the p-type. Pentadienyl magnesium (Cp ₂ Mg) or bisethylcyclopentadienyl magnesium ((EtCp) ₂ Mg) is used.

  EXAMPLES Next, although an Example demonstrates this invention still in detail, this invention is not limited only to these Examples.

Example 1
FIG. 1 is a schematic view showing a cross section of a gallium nitride-based compound semiconductor light-emitting device manufactured in this example, and FIG. 2 is a schematic view showing a state of its mounting.
In the semiconductor laminated structure, a gallium nitride compound semiconductor layer 1 was laminated on a substrate made of sapphire via a buffer layer made of AlN, and then the sapphire substrate was peeled off using a laser peeling machine. The gallium nitride compound semiconductor layer 1 includes a Ge-doped n-type GaN contact layer 16 having a thickness of 10 μm, a Si-doped n-type In _0.1 Ga _0.9 N cladding layer 15 having a thickness of 0.02 μm, and a Si-doped GaN barrier layer having a thickness of 16 nm. And an In _0.06 Ga _0.94 N well layer having a thickness of 2.5 nm, and a light emitting layer 14 having a multi-quantum well structure in which a barrier layer is finally provided, and an Mg-doped p-type Al _0.07 Ga layer having a thickness of 0.01 μm. _It consists of a _0.93 N clad layer 13 and a Mg doped p-type Al _0.02 Ga _0.98 N contact layer 12 having a thickness of 0.18 μm.
A transparent electrode layer 11 made of ITO having a thickness of 200 nm was formed on the p-type AlGaN 12 contact layer. On the n-type GaN contact layer 16, a negative electrode 17 having a two-layer structure of Ti / Au was formed. The light extraction surface was the substrate side.

In this structure, the carrier concentration of the n-type GaN contact layer is 1 × 10 ¹⁹ cm ⁻³ , the Si doping amount of the GaN barrier layer is 1 × 10 ¹⁷ cm ⁻³ , and the carrier concentration of the p-type AlGaN contact layer is 5 is a × 10 ¹⁸ cm ^-3, Mg doping amount of p-type AlGaN cladding layer was 5 × 10 ¹⁹ cm ^-3.

  Lamination of gallium nitride-based compound semiconductor layers (12 to 16 in FIG. 1) was performed by MOCVD under normal conditions well known in the art. Moreover, the positive electrode 11 and the negative electrode 17 were formed in the following procedure.

  First, the back surface of the sapphire substrate was polished and made transparent, and an excimer laser was scanned and irradiated to generate heat between the sapphire substrate and the GaN layer, and the sapphire substrate was peeled off. Prior to peeling, a Si substrate for supporting was adhered to the p-layer surface.

Next, a negative electrode was formed on the exposed n-type GaN contact layer by the following procedure. On the exposed n-type layer, a negative electrode composed of Ti of 100 μm and Au of 1 μm was formed in this order from the semiconductor side by a commonly used vacuum deposition method.
After forming the electrode film on the n side, the Si substrate was separated by dissolving the adhesive with a solvent. Thereafter, the substrate was held with the n-electrode film for handling.

  Next, a contact metal layer made of ITO was formed on the p-type AlGaN contact layer. In the formation of the contact metal layer, the substrate was introduced into a vacuum sputtering apparatus, and an ITO film was laminated to 500 nm.

  The wafer on which the positive electrode and the negative electrode were formed in this manner was cut from the n-electrode side using a dicer and separated into 350 μm square chips. Subsequently, when these chips were energized with a probe needle and the forward voltage was measured at a current application value of 20 mA, it was 2.95V.

Then, this chip was mounted.
First, a solution 25 in which powdered ITO was dissolved in a solvent was applied on the transparent electrode 11, and this was placed on a substrate on which an ITO wiring 24 was formed on a glass plate 26 by vapor deposition. After placing the three elements in the same procedure as described above, the glass plate was heated to about 300 ° C. to evaporate the solvent and firmly adhere the element to the substrate.

  After that, the eutectic solder paste 22 made of AuSn was applied on the metal electrode surface, and the alumina ceramic substrate 23 on which the metal wiring 21 was patterned was placed from the back surface, and heated in a reflow furnace.

  Through the above operation, a chip mounting substrate having a structure as shown in a sectional view in FIG. 2 was produced. By passing an electric current through the wiring, the chip emitted blue light, and the emitted light could be taken out through the glass plate.

(Example 2)
In Example 2, most of the steps were the same as in Example 1, and the substrate on which the transparent electrode side was mounted was an epoxy resin substrate on which a patterned ITO wiring was applied as a power feeding unit. The epoxy resin substrate contains SiAlON, which is a phosphor that generates yellow light by blue light emission. Other than that, the same structure and the same process as Example 1 were adopted. Thereby, white light was able to be taken out.

  Since the gallium nitride-based compound semiconductor light-emitting device of the present invention has excellent light extraction efficiency, a high-intensity LED lamp can be produced from this light-emitting device, and is useful for illumination use, display use, and backlight use.

1 is a schematic view showing a cross section of a gallium nitride-based compound semiconductor light emitting device of the present invention produced in Example 1. FIG. 1 is a schematic view of a mounting body of a gallium nitride-based compound semiconductor light-emitting element of the present invention produced in Example 1. FIG.

Explanation of symbols

1 Semiconductor chip produced by the present invention 11 Transparent electrode (p side)
12 p-type contact layer 13 p-type cladding layer 14 active layer 15 n-type cladding layer 16 n-type contact layer 17 metal electrode (n side)
21 Metal wiring 22 Solder 23 Ceramic substrate 24 Transparent conductive oxide wiring 25 Transparent conductive adhesive 26 Transparent substrate

Claims (27)

  In a light-emitting element including a stack of gallium nitride compound semiconductors, the stack has a first surface and a second surface opposite to the first surface, and a metal electrode is disposed on the first surface. 2. A gallium nitride-based compound semiconductor light emitting device, wherein the second surface is a light extraction direction, and an electrode made of a conductive and transparent material is provided on the second surface.   The gallium nitride-based compound semiconductor light-emitting element according to claim 1, wherein the electrode formed on the first surface is an electrode for bonding.   The gallium nitride-based compound semiconductor light-emitting element according to claim 1, wherein the transparent material formed on the second surface is ITO or ZnO.   In a light-emitting element including a stack of gallium nitride compound semiconductors, the stack has a first surface and a second surface opposite to the first surface, and a metal electrode is provided on the first surface. An electrode made of a conductive and transparent material is disposed on the surface of the substrate, a transparent substrate is disposed on the second surface, and light is extracted to the outside through the substrate. Mounting body of gallium nitride compound semiconductor light emitting device.   In a light emitting device including a stack of gallium nitride compound semiconductors, a plurality of stacks are arranged in parallel, and each stack has a first surface and a second surface opposite to the first surface. Is provided with a metal electrode, an electrode made of a conductive and transparent material is installed on the second surface, a transparent substrate is installed on the second surface, and light is transmitted through the substrate. A gallium nitride-based compound semiconductor light-emitting element mounting body characterized by having a structure of taking out to the outside.   6. The package of a gallium nitride compound semiconductor light emitting element according to claim 5, wherein the plurality of laminated bodies have different light emission colors.   The gallium nitride compound semiconductor light-emitting element mounting body according to any one of claims 4 to 6, wherein the substrate is made of glass.   The gallium nitride compound semiconductor light-emitting element mounting body according to any one of claims 4 to 6, wherein the base is made of a synthetic resin.   The gallium nitride compound semiconductor light-emitting element mounting body according to any one of claims 4 to 8, wherein a power feeding portion is provided between the electrode on the second surface and the substrate.   The gallium nitride compound semiconductor light-emitting element mounting body according to any one of claims 4 to 9, wherein a base is bonded to the first surface.   The mounting body for a gallium nitride-based compound semiconductor light-emitting element according to claim 10, wherein the base is made of metal.   The gallium nitride compound semiconductor light-emitting element mounting body according to claim 11, wherein the metal base is a heat dissipation base.   The gallium nitride-based compound semiconductor light-emitting element mounting body according to claim 10, wherein the base of the first surface is made of ceramics.   The gallium nitride-based compound semiconductor light-emitting element mounting body according to claim 8, wherein a power feeding portion is provided between the electrode on the first surface and the substrate.   In a method for manufacturing a light-emitting element including a laminate of gallium nitride compound semiconductors, an electrode made of a conductive and transparent material is placed on the second surface in the light extraction direction of the laminate, and transparent on the electrode A gallium nitride compound semiconductor light emitting device characterized in that a transparent substrate is bonded using an adhesive, a metal electrode is disposed on the first surface of the laminate, and the substrate is disposed on the electrode. Implementation method.   In a method for manufacturing a light emitting device including a laminate of gallium nitride compound semiconductors, a plurality of the laminates are arranged in parallel, and the second surface, which is the light extraction direction of each laminate, is electrically conductive and transparent. An electrode made of a material is installed, a transparent substrate is adhered on the electrode using a transparent adhesive, a metal electrode is installed on the first surface of each laminate, and the substrate is installed on the electrode A mounting method for a gallium nitride-based compound semiconductor light-emitting device characterized by the above.   17. The method for mounting a gallium nitride-based compound semiconductor light-emitting element according to claim 16, wherein the plurality of stacked bodies have different light emission colors.   The method for mounting a gallium nitride-based compound semiconductor light-emitting element according to any one of claims 15 to 17, wherein the conductive and transparent material is ITO or ZnO.   The method for mounting a gallium nitride-based compound semiconductor light-emitting element according to any one of claims 15 to 18, wherein a power feeding portion is provided between the electrode on the second surface and the substrate.   The method for mounting a gallium nitride-based compound semiconductor light-emitting element according to claim 15, wherein the transparent substrate on the second surface is glass.   21. The method for mounting a gallium nitride-based compound semiconductor light-emitting element according to claim 15, wherein the transparent substrate on the second surface is a synthetic resin.   The method for mounting a gallium nitride-based compound semiconductor light-emitting element according to any one of claims 15 to 21, wherein a power feeding unit is provided between the electrode on the first surface and the substrate.   The method for mounting a gallium nitride-based compound semiconductor light-emitting element according to any one of claims 15 to 22, wherein a substrate having a power feeding portion is bonded onto the electrode on the first surface using solder or bumps.   24. The method for mounting a gallium nitride-based compound semiconductor light-emitting element according to claim 15, wherein the base of the first surface is a metal.   The method for mounting a gallium nitride-based compound semiconductor light-emitting element according to any one of claims 15 to 23, wherein the substrate of the first surface is ceramic.   The light emitting element which combined the light emitting element of Claims 1-14, and fluorescent substance. The lighting fixture using the light emitting element of Claim 26.

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