CN103700735B - A kind of light emitting diode and manufacture method thereof - Google Patents
A kind of light emitting diode and manufacture method thereof Download PDFInfo
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- CN103700735B CN103700735B CN201210367771.5A CN201210367771A CN103700735B CN 103700735 B CN103700735 B CN 103700735B CN 201210367771 A CN201210367771 A CN 201210367771A CN 103700735 B CN103700735 B CN 103700735B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 238000005530 etching Methods 0.000 claims abstract description 34
- 239000004065 semiconductor Substances 0.000 claims abstract description 31
- 229910052681 coesite Inorganic materials 0.000 claims description 16
- 229910052906 cristobalite Inorganic materials 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052682 stishovite Inorganic materials 0.000 claims description 16
- 229910052905 tridymite Inorganic materials 0.000 claims description 16
- 238000001704 evaporation Methods 0.000 claims description 13
- 230000008020 evaporation Effects 0.000 claims description 9
- 229910052594 sapphire Inorganic materials 0.000 claims description 8
- 239000010980 sapphire Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 238000003475 lamination Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 230000008901 benefit Effects 0.000 abstract description 7
- 238000000605 extraction Methods 0.000 abstract description 3
- 229910005540 GaP Inorganic materials 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- 238000004020 luminiscence type Methods 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
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- 229910017214 AsGa Inorganic materials 0.000 description 2
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- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- -1 GaAs(GaAs) Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
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- 238000005229 chemical vapour deposition Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The present invention provides a kind of light emitting diode and manufacture method thereof, forms light emitting epitaxial layer and transparency conducting layer prior to semiconductor substrate surface, and anneals this transparency conducting layer；Then etch N electrode and prepare region, and form an etching window in the region of described transparency conducting layer P electrode to be prepared；Then reflecting mirror is made in described etching window；Finally make P electrode, make this P electrode cover described mirror surface and form Ohmic contact with described transparency conducting layer and contact, and prepare region in described N electrode and prepare N electrode.The method have the advantages that and prepare high reflection layer under P electrode so that photon produced by luminous zone, almost all reflects back, and is seldom absorbed by P electrode, thus improves the light extraction efficiency of LED chip.
Description
Technical field
The invention belongs to field of semiconductor illumination, particularly relate to a kind of light emitting diode and manufacture method thereof.
Background technology
Semiconductor lighting, as new and effective solid light source, has the remarkable advantages such as life-span length, energy-saving and environmental protection, safety, will become
Illuminating leaping again after electric filament lamp, fluorescent lamp in history for the mankind, its application expands the most rapidly, is just driving biography
The upgrading of the industries such as system illumination, display, its economic benefit and social benefit are huge.Just because of this, semiconductor lighting is general
All over regarding one of 21 century new industry most with prospects as, be also the most important commanding elevation of the optoelectronic areas coming years it
One.Light emitting diode is by three four compounds, such as GaAs(GaAs), GaP(gallium phosphide), GaAsP(gallium arsenide phosphide)
Making Deng quasiconductor, its core is PN junction.Therefore it has an I-N characteristic of general P-N junction, i.e. forward conduction, reversely
Cut-off, breakdown characteristics.Additionally, under certain condition, it also has the characteristics of luminescence.Under forward voltage, electronics is noted by N district
Entering P district, N district is injected by P district in hole.Minority carrier (few son) part entering the other side region is (many with majority carrier
Son) compound and luminous.
The preparation method of existing a kind of light-emitting diode chip for backlight unit includes step: epitaxial growth 20, extension are cleaned, N face step etching,
Be coated with protection glue, just draw, clean, ITO evaporation 21, ITO photoetching, N electrode 24 and prepared by P electrode 23, surface passivation layer system
Standby, thinning, back of the body plating reflecting mirror 25, the concrete structure of this light emitting diode is as shown in Figures 1 and 2.But, this luminescence
Diode, owing to P electrode is deposited directly on p-GaN or on ITO, the luminous zone under such P electrode directly has electric current to inject,
The light that luminous zone under P electrode is sent, the overwhelming majority is absorbed by P electrode, thus causes luminous efficiency to reduce.
The preparation method of existing another kind of light-emitting diode chip for backlight unit includes step: epitaxial growth 20, extension are cleaned, N face step
Etching, be coated with protection glue, just draw, clean, P electrode layer underlay SiO2Deposition 22, P electrode layer underlay SiO2Etching, ITO steam
Plating 21, ITO photoetching, N electrode 24 and prepared by P electrode 23, prepared by surface passivation layer, thinning, the back of the body plating reflecting mirror 25, this
Plant the concrete structure of light emitting diode as shown in Figure 3.This light emitting diode does not has electric current direct due to the luminous zone under P electrode
Inject, the electric current density of chip can be improved.But, photon produced by the luminous zone of this light emitting diode, still there is part
Luminous energy passes SiO under P2Layer, is absorbed by P electrode, causes partial photonic to lose, cause LED chip light-emitting efficiency to decline.
Summary of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide a kind of light emitting diode and manufacture method thereof,
For the problem solving to cause light emitting diode light extraction efficiency to decline the Absorption of light due to P electrode in prior art.
For achieving the above object and other relevant purposes, the present invention provides the manufacture method of a kind of light emitting diode, described manufacturer
Method at least comprises the following steps:
1) provide semi-conductive substrate, at least include N-type layer, quantum well layer and p-type in described semiconductor substrate surface deposition
The epitaxial light emission structure of layer；
2) in described P-type layer surface evaporation or sputtering transparency conducting layer, and this transparency conducting layer is annealed；
3) etch described transparency conducting layer, P-type layer and quantum well layer and prepare region to form N electrode；
4) described transparency conducting layer is etched, to form one in the region of P electrode to be prepared until the etching window of described P-type layer；
5) reflecting mirror is made in described etching window；
6) make P electrode, make this P electrode cover described mirror surface and contact with described transparency conducting layer formation Ohmic contact,
And prepare region in described N electrode and prepare N electrode.
As the preferred version of manufacture method of the light emitting diode of the present invention, the Semiconductor substrate described in step 1) is
Sapphire Substrate, described N-type layer is N-GaN layer, and described quantum well layer is InGaN layer, and described P-type layer is P-GaN layer.
In the manufacture method of the light emitting diode of the present invention, described transparency conducting layer is ITO, ATO, FTO or AZO.
As the preferred version of manufacture method of the light emitting diode of the present invention, the vertical reflection rate of described reflecting mirror is more than
70%。
As the preferred version of manufacture method of the light emitting diode of the present invention, the material of described reflecting mirror is Al layer, Ag
Layer, Al layer-Au layer-Ni layer laminate, Ag layer-Au layer-Ni layer laminate, Al layer-SiO2Layer laminate or Ag layer-SiO2Lamination.
As the preferred version of manufacture method of the light emitting diode of the present invention, also include from following table after described step 6)
The thinning described Semiconductor substrate in face and in this Semiconductor substrate lower surface make back silver-plated reflecting layer step.
The present invention also provides for a kind of light emitting diode, at least includes:
Semiconductor substrate, its lower surface is combined with back silver-plated reflecting layer；
Epitaxial light emission structure, at least includes stacking gradually the N-type layer in described semiconductor substrate surface, quantum well layer, P-type layer,
And described N-type layer surface has N electrode and prepares region；
Transparency conducting layer, is incorporated into described P-type layer surface, and has an etching window；
Reflecting mirror, is filled in described etching window；
P electrode, is covered in described transmitting mirror surface and contacts with described transparency conducting layer formation Ohmic contact；
N electrode, is prepared in described N electrode and prepares region.
As a preferred version of the light emitting diode of the present invention, described Semiconductor substrate is Sapphire Substrate, described N-type layer
For N-GaN layer, described quantum well layer is InGaN layer, and described P-type layer is P-GaN layer.
In the light emitting diode of the present invention, described transparency conducting layer is ITO, ATO, FTO or AZO.
As a preferred version of the light emitting diode of the present invention, the vertical reflection rate of described reflecting mirror is more than 70%.
In the light emitting diode of the present invention, the material of described reflecting mirror be Al layer, Ag layer, Al layer-Au layer-Ni layer laminate,
Ag layer-Au layer-Ni layer laminate, Al layer-SiO2 layer laminate or Ag layer-SiO2 layer laminate.
As it has been described above, the offer one light emitting diode of the present invention and manufacture method thereof, form luminescence prior to semiconductor substrate surface
Epitaxial layer and transparency conducting layer, and this transparency conducting layer is annealed；Then etch N electrode and prepare region, and described
The region of transparency conducting layer P electrode to be prepared forms an etching window；Then reflecting mirror is made in described etching window；Finally make
Make P electrode, make this P electrode cover described mirror surface and contact with described transparency conducting layer formation Ohmic contact, and in institute
State N electrode to prepare region and prepare N electrode.The method have the advantages that and prepare high reflection layer under P electrode so that
Photon produced by luminous zone, almost all reflects back, and is seldom absorbed by P electrode, thus improve LED chip go out light efficiency
Rate.
Accompanying drawing explanation
Fig. 1 ~ Fig. 3 is shown as light emitting diode construction schematic diagram of the prior art.
Fig. 4 ~ Fig. 5 is shown as the structural representation that the manufacture method step 1) of the light emitting diode of the present invention is presented.
Fig. 6 is shown as the manufacture method step 2 of the light emitting diode of the present invention) structural representation that presented.
Fig. 7 is shown as the structural representation that the manufacture method step 3) of the light emitting diode of the present invention is presented.
Fig. 8 is shown as the structural representation that the manufacture method step 4) of the light emitting diode of the present invention is presented.
Fig. 9 is shown as the structural representation that the manufacture method step 5) of the light emitting diode of the present invention is presented.
Figure 10 is shown as the structural representation that the manufacture method step 6) of the light emitting diode of the present invention is presented.
Figure 11 is shown as the structural representation that the light emitting diode of the present invention is presented.
Element numbers explanation
101 Semiconductor substrate
102 N-type layer
103 quantum well layers
104 P-type layer
105 transparency conducting layers
106 N electrode prepare region
107 etching window
108 reflecting mirrors
109 P electrode
110 N electrode
111 back silver-plated reflecting layers
Detailed description of the invention
Below by way of specific instantiation, embodiments of the present invention being described, those skilled in the art can be by disclosed by this specification
Content understand other advantages and effect of the present invention easily.The present invention can also be added by the most different detailed description of the invention
To implement or application, the every details in this specification can also be based on different viewpoints and application, in the essence without departing from the present invention
Various modification or change is carried out under god.
Refer to Fig. 4 ~ Figure 11.It should be noted that the diagram provided in the present embodiment illustrates the present invention's the most in a schematic way
Basic conception, the most graphic in component count time only display with relevant assembly in the present invention rather than is implemented according to reality, shape and
Size is drawn, and during its actual enforcement, the kenel of each assembly, quantity and ratio can be a kind of random change, and its assembly layout type
State is likely to increasingly complex.
Embodiment 1
As shown in Fig. 4 ~ Figure 11, the present embodiment provides the manufacture method of a kind of light emitting diode, and described manufacture method at least includes
Following steps:
As shown in Fig. 4 ~ Fig. 5, first carry out step 1), it is provided that semi-conductive substrate 101, in described Semiconductor substrate 101
Surface is sequentially depositing and at least includes N-type layer 102, quantum well layer 103 and the epitaxial light emission structure of P-type layer 104.
Described Semiconductor substrate 101 is Si substrate, SiC substrate, AsGa substrate, Sapphire Substrate etc., in the present embodiment,
Described Semiconductor substrate 101 is Sapphire Substrate.Described N-type layer 102 is N-GaN layer, N-GaP layer etc., described amount
Sub-well layer 103 is InGaN layer, AlInGaP layer etc., and described P-type layer 104 is P-GaN layer, P-GaP layer etc..In this reality
Executing in example, described N-type layer 102 is N-GaN layer, and described quantum well layer 103 is InGaN layer, and described P-type layer 104 is
P-GaN layer, preparation method is chemical vapour deposition technique.Certainly, in other embodiments, can select outside other luminescence
Prolonging layer, its preparation method can also select extension means expected from all.
As shown in Figure 6, then carry out step 2), in described P-type layer 104 surface evaporation or sputtering transparency conducting layer 105, and
This transparency conducting layer 105 is annealed.
Described transparency conducting layer 105 is ITO, ATO, FTO or AZO, in the present embodiment, and described transparency conducting layer 105
For ITO.Prior to described P-type layer 104 surface evaporation or sputtering transparency conducting layer 105, and this transparency conducting layer 105 is carried out
Annealing, so that described transparency conducting layer 105 becomes fine and close, and eliminates its internal stress and defect.
As it is shown in fig. 7, then carry out step 3), etch described transparency conducting layer 105, P-type layer 104 and quantum well layer 103
Region 106 is prepared with formation N electrode 110.
In the present embodiment, first make lithography mask version, then use ICP etching method etching described transparency conducting layer 105, P
Type layer 104 and quantum well layer 103 prepare region 106 to form N electrode 110.
As shown in Figure 8, then carry out step 4), etch described transparency conducting layer 105, with the district in P electrode 109 to be prepared
Territory forms one until the etching window 107 of described P-type layer 104.
In the present embodiment, first make lithography mask version, then use ICP etching method to etch described transparency conducting layer 105, with
Formed one until the etching window 107 of described P-type layer 104 in the region of P electrode 109 to be prepared, this etching window 107
Area ratio P electrode 109 is smaller, so that can make P electrode 109 and described transparency conducting layer 105 when making P electrode 109 below
Form Ohmic contact.
As it is shown in figure 9, then carry out step 5), make reflecting mirror 108 in described etching window 107.In the present embodiment,
Require that the vertical reflection rate of described reflecting mirror 108 is more than 70%.The material of described reflecting mirror 108 is Al layer, Ag layer, Al layer
-Au layer-Ni layer laminate, Ag layer-Au layer-Ni layer laminate, Al layer-SiO2Layer laminate or Ag layer-SiO2Lamination.
Specifically, in the present embodiment, use the method being deposited with in described etching window 107 evaporating Al layer to form described reflection
Mirror 108.
In another embodiment, the method for evaporation is used to be deposited with Ag layer to form described reflecting mirror 108 in described etching window 107.
In another embodiment, use evaporation method successively in described etching window 107 evaporating Al, Au, Ni to form institute
State reflecting mirror 108.
In another embodiment, the method for evaporation is used to be deposited with Ag, Au, Ni to form institute in described etching window 107 successively
State reflecting mirror 108.
In another embodiment, use the method for evaporation to be deposited with Ag in described etching window 107 successively, then use chemical gaseous phase
Deposition method SiO2To form described reflecting mirror 108.
In another embodiment, use the method for evaporation successively in described etching window 107 evaporating Al, then use chemical gaseous phase
Deposition method SiO2To form described reflecting mirror 108.
As shown in Figure 10, finally carry out step 6), make P electrode 109, make this P electrode 109 cover described reflecting mirror 108
Surface also forms Ohmic contact with described transparency conducting layer 105 and contacts, and prepares region 106 in described N electrode 110 and prepare N
Electrode 110.
Certainly, the manufacture method of the light emitting diode of the present embodiment also include from the thinning described Semiconductor substrate 101 of lower surface and in
This Semiconductor substrate 101 lower surface makes the steps such as back silver-plated reflecting layer 111, scribing, sliver, as shown in figure 11.
Specifically, grinding or wet chemical etching technique is used to carry out thinning to described Semiconductor substrate 101, then by sputtering, steaming
The methods such as plating make back silver-plated reflecting layer 111 in described Semiconductor substrate 101 lower surface.
Described scribing process, for just to draw technique, is carried out after step 3), and described sliver technique uses the mode of sliver cutter sliver to exist
Carry out, to obtain independent luminescence unit after back of the body plating reflector layer technique.
Embodiment 2
As shown in figure 11, the present invention also provides for a kind of light emitting diode, at least includes:
Semiconductor substrate 101, its lower surface is combined with back silver-plated reflecting layer 111；
Epitaxial light emission structure, at least includes stacking gradually the N-type layer 102 in described Semiconductor substrate 101 surface, quantum well layer
103, P-type layer 104, and described N-type layer 102 surface has N electrode 110 and prepares region 106；
Transparency conducting layer 105, is incorporated into described P-type layer 104 surface, and has an etching window 107；
Reflecting mirror 108, is filled in described etching window 107；
P electrode 109, is covered in described transmitting mirror surface and forms Ohmic contact with described transparency conducting layer 105 and contact；
N electrode 110, is prepared in described N electrode 110 and prepares region 106.
Described Semiconductor substrate 101 is Si substrate, SiC substrate, AsGa substrate, Sapphire Substrate etc., in the present embodiment,
Described Semiconductor substrate 101 is Sapphire Substrate.Described N-type layer 102 is N-GaN layer, N-GaP layer etc., described amount
Sub-well layer 103 is InGaN layer, AlInGaP layer etc., and described P-type layer 104 is P-GaN layer, P-GaP layer etc..In this reality
Executing in example, described N-type layer 102 is N-GaN layer, and described quantum well layer 103 is InGaN layer, and described P-type layer 104 is
P-GaN layer.
Described transparency conducting layer 105 is ITO, ATO, FTO or AZO.In the present embodiment, described transparency conducting layer 105
For ITO.
The area ratio P electrode 109 of described etching window 107 is smaller, so that described P electrode 109 and described transparency conducting layer 105
Form Ohmic contact.
The vertical reflection rate of described reflecting mirror 108 is more than 70%.The material of described reflecting mirror 108 is Al layer, Ag layer, Al layer
-Au layer-Ni layer laminate, Ag layer-Au layer-Ni layer laminate, Al layer-SiO2Layer laminate or Ag layer-SiO2Layer laminate.
In sum, the offer one light emitting diode of the present invention and manufacture method thereof, formed prior to Semiconductor substrate 101 surface
Light emitting epitaxial layer and transparency conducting layer 105, and this transparency conducting layer 105 is annealed；Then etch N electrode 110 to make
Territory, preparation area 106, and form an etching window 107 in the region of described transparency conducting layer 105 P electrode to be prepared 109；Then in
Described etching window 107 makes reflecting mirror 108；Finally make P electrode 109, make this P electrode 109 cover described reflecting mirror
108 surfaces also form Ohmic contact with described transparency conducting layer 105 and contact, and prepare region 106 in described N electrode 110 and make
Standby N electrode 110.The method have the advantages that and prepare high reflection mirror 108 109 times in P electrode so that luminous zone
Produced photon, almost all reflects back, and is seldom absorbed by P electrode 109, thus improves the light extraction efficiency of LED chip.
So, the present invention effectively overcomes various shortcoming of the prior art and has high industrial utilization.
The principle of above-described embodiment only illustrative present invention and effect thereof, not for limiting the present invention.Any it is familiar with this skill
Above-described embodiment all can be modified under the spirit and the scope of the present invention or change by the personage of art.Therefore, such as
All that in art, tool usually intellectual is completed under without departing from disclosed spirit and technological thought etc.
Effect is modified or changes, and must be contained by the claim of the present invention.
Claims (11)
1. the manufacture method of a light emitting diode, it is characterised in that described manufacture method at least comprises the following steps:
1) provide semi-conductive substrate, at least include N-type layer, quantum well layer and P in described semiconductor substrate surface deposition
The epitaxial light emission structure of type layer；
2) in described P-type layer surface evaporation or sputtering transparency conducting layer, and this transparency conducting layer is annealed；
3) etch described transparency conducting layer, P-type layer and quantum well layer and prepare region to form N electrode；
4) described transparency conducting layer is etched, to form one in the region of P electrode to be prepared until the etching window of described P-type layer
Mouthful；
5) reflecting mirror is made in described etching window；
6) make P electrode, make this P electrode cover described mirror surface and form Ohmic contact with described transparency conducting layer
Contact, and prepare region in described N electrode and prepare N electrode.
The manufacture method of light emitting diode the most according to claim 1, it is characterised in that: the quasiconductor lining described in step 1)
The end is Sapphire Substrate, and described N-type layer is N-GaN layer, and described quantum well layer is InGaN layer, and described P-type layer is
P-GaN layer.
The manufacture method of light emitting diode the most according to claim 1, it is characterised in that: described transparency conducting layer is ITO, ATO,
FTO or AZO.
The manufacture method of light emitting diode the most according to claim 1, it is characterised in that: the vertical reflection rate of described reflecting mirror is big
In 70%.
The manufacture method of light emitting diode the most according to claim 1, it is characterised in that: the material of described reflecting mirror be Al layer,
Ag layer, Al layer-Au layer-Ni layer laminate, Ag layer-Au layer-Ni layer laminate, Al layer-SiO2Layer laminate or Ag layer-SiO2
Lamination.
The manufacture method of light emitting diode the most according to claim 1, it is characterised in that: also include after described step 6) from
The thinning described Semiconductor substrate of lower surface, and the step of back silver-plated reflecting layer is made in this Semiconductor substrate lower surface.
7. a light emitting diode, it is characterised in that at least include:
Semiconductor substrate, its lower surface is combined with back silver-plated reflecting layer；
Epitaxial light emission structure, at least includes stacking gradually the N-type layer in described Semiconductor substrate upper surface, quantum well layer, P
Type layer, and described N-type layer surface has N electrode and prepares region；
Transparency conducting layer, is incorporated into described P-type layer surface, and has an etching window；
Reflecting mirror, is filled in described etching window；
P electrode, is covered in described transmitting mirror surface and contacts with described transparency conducting layer formation Ohmic contact；
N electrode, is prepared in described N electrode and prepares region.
Light emitting diode the most according to claim 7, it is characterised in that: described Semiconductor substrate is Sapphire Substrate, described N
Type layer is N-GaN layer, and described quantum well layer is InGaN layer, and described P-type layer is P-GaN layer.
Light emitting diode the most according to claim 7, it is characterised in that: described transparency conducting layer be ITO, ATO, FTO or
AZO。
Light emitting diode the most according to claim 7, it is characterised in that: the vertical reflection rate of described reflecting mirror is more than 70%.
11. light emitting diodes according to claim 7, it is characterised in that: the material of described reflecting mirror be Al layer, Ag layer,
Al layer-Au layer-Ni layer laminate, Ag layer-Au layer-Ni layer laminate, Al layer-SiO2Layer laminate or Ag layer-SiO2Layer laminate.
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| CN201210367771.5A CN103700735B (en) | 2012-09-28 | 2012-09-28 | A kind of light emitting diode and manufacture method thereof |
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| CN201210367771.5A CN103700735B (en) | 2012-09-28 | 2012-09-28 | A kind of light emitting diode and manufacture method thereof |
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| CN103700735B true CN103700735B (en) | 2016-09-28 |
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| CN105336826B (en) * | 2015-11-11 | 2017-11-21 | 厦门乾照光电股份有限公司 | A kind of LED production method in integrated porous shape reflecting layer |
| CN108735871A (en) * | 2017-04-25 | 2018-11-02 | 山东浪潮华光光电子股份有限公司 | A kind of GaN base light emitting chip and preparation method thereof |
| CN107731969A (en) * | 2017-10-18 | 2018-02-23 | 湘能华磊光电股份有限公司 | The preparation method of LED chip |
| US10490574B2 (en) | 2017-12-28 | 2019-11-26 | Huizhou China Star Optoelectronics Technology Co., Ltd. | Low-reflection composite electrode and TFT array substrate |
| CN108598157B (en) * | 2017-12-28 | 2020-11-13 | 惠州市华星光电技术有限公司 | Low-reflection composite electrode and TFT array substrate |
| DE102018101700A1 (en) * | 2018-01-25 | 2019-07-25 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component |
| CN114361300A (en) * | 2022-01-05 | 2022-04-15 | 深圳市思坦科技有限公司 | Micro light-emitting diode preparation method and micro light-emitting diode |
| CN116169215B (en) * | 2023-04-24 | 2023-07-18 | 江西兆驰半导体有限公司 | Current blocking layer, preparation method thereof and LED chip |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101604717A (en) * | 2009-07-15 | 2009-12-16 | 山东华光光电子有限公司 | A kind of vertical GaN-based LED chip and preparation method thereof |
| CN101924116A (en) * | 2009-06-12 | 2010-12-22 | 刘胜 | Extensible oversize light-emitting diode (LED) chip and manufacture method thereof |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020117672A1 (en) * | 2001-02-23 | 2002-08-29 | Ming-Sung Chu | High-brightness blue-light emitting crystalline structure |
| JP2006019764A (en) * | 2003-05-27 | 2006-01-19 | Matsushita Electric Works Ltd | Semiconductor light emitting device and its manufacturing method |
| KR100601143B1 (en) * | 2003-07-30 | 2006-07-19 | 에피밸리 주식회사 | Semiconductor Light Emitting Device |
| JP2006128296A (en) * | 2004-10-27 | 2006-05-18 | Kyocera Corp | Light-emitting element and illuminator using the same |
| KR20090044311A (en) * | 2007-10-31 | 2009-05-07 | 한국광기술원 | Light emitting diode and its manufacturing method |
| JP5057398B2 (en) * | 2008-08-05 | 2012-10-24 | シャープ株式会社 | Nitride semiconductor light emitting device and manufacturing method thereof |
| TWI479686B (en) * | 2009-02-05 | 2015-04-01 | Huga Optotech Inc | Light-emitting diode |
| KR101729267B1 (en) * | 2010-11-17 | 2017-04-21 | 엘지이노텍 주식회사 | Light emitting device |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101924116A (en) * | 2009-06-12 | 2010-12-22 | 刘胜 | Extensible oversize light-emitting diode (LED) chip and manufacture method thereof |
| CN101604717A (en) * | 2009-07-15 | 2009-12-16 | 山东华光光电子有限公司 | A kind of vertical GaN-based LED chip and preparation method thereof |
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