CN103515491A - Manufacturing method for light-emitting diode - Google Patents
Manufacturing method for light-emitting diode Download PDFInfo
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- CN103515491A CN103515491A CN201210219226.1A CN201210219226A CN103515491A CN 103515491 A CN103515491 A CN 103515491A CN 201210219226 A CN201210219226 A CN 201210219226A CN 103515491 A CN103515491 A CN 103515491A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 239000004065 semiconductor Substances 0.000 claims abstract description 26
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 23
- 239000010980 sapphire Substances 0.000 claims abstract description 23
- 238000003491 array Methods 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 52
- 238000007598 dipping method Methods 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 4
- 238000003698 laser cutting Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 238000009776 industrial production Methods 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract description 2
- 230000006835 compression Effects 0.000 abstract 2
- 238000007906 compression Methods 0.000 abstract 2
- 238000000605 extraction Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 230000012010 growth Effects 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 229910005540 GaP Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007773 growth pattern Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 206010041662 Splinter Diseases 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention provides a manufacturing method for a light-emitting diode. An N-GaN layer, a quantum well layer, a P-GaN layer and a light emitting epitaxial layer of a transparent conducting layer are formed on a sapphire substrate; light emitting epitaxial arrays are defined, etching and scribing are carried out according to the light emitting epitaxial arrays, a plurality of scribing channels reaching the N-GaN layer and V-type scribing grooves stretching from all the scribing channels to a preset depth of a semiconductor substrate are formed; electrodes are prepared, and the sapphire substrate is thinned; lastly, a slice splitting cutter is used for carrying out slice splitting on all the light emitting epitaxial arrays to obtain a light emitting inclined plane, wherein transverse deflection which is 1-150 microns is reserved between the compression position of the slice splitting cutter and the bottoms of the V-type scribing grooves. According to the manufacturing method for the light-emitting diode, slice splitting is carried out in the mode that the transverse deflection is reserved between the compression position of the slice splitting cutter and the scribing grooves, the light emitting inclined plane is obtained in the sapphire substrate, the light-emitting area is increased effectively, and the light-emitting efficiency of the light-emitting diode is improved. The manufacturing method for the light-emitting diode is capable of improving the light-emitting efficiency of the light-emitting diode with low cost, simple in technology and suitable for industrial production.
Description
Technical field
The invention belongs to field of semiconductor illumination, particularly relate to a kind of manufacture method of light-emitting diode.
Background technology
Semiconductor lighting is as new and effective solid light source, there is the remarkable advantages such as life-span length, energy-saving and environmental protection, safety, mankind's leap again after incandescent lamp, fluorescent lamp in history of throwing light on will be become, its application expands rapidly, just driving the upgrading of the industries such as traditional lighting, demonstration, its economic benefit and social benefit are huge.Just because of this, semiconductor lighting is generally regarded as one of new industry that 21 century is most with prospects, is also one of most important commanding elevation of the optoelectronic areas coming years.Light-emitting diode is by three four compounds, as GaAs(GaAs), GaP(gallium phosphide), GaAsP(gallium arsenide phosphide) etc. semiconductor make, its core is PN junction.Therefore it has the I-N characteristic of general P-N knot, i.e. forward conduction, oppositely cut-off, breakdown characteristics.In addition, under certain condition, it also has the characteristics of luminescence.Under forward voltage, electronics injects P district by N district, and N district is injected by P district in hole.How sub minority carrier (few son) part that enters the other side region is compound and luminous with majority carrier ().
The light extraction efficiency that how to improve LED is the focus meriting attention most in the industry always.The method of existing increase light-emitting diode light extraction efficiency is generally that light output surface is carried out to alligatoring, to reduce the total reflection in light-emitting diode, increases light emission rate.Yet this technique generally needs higher cost.
Existing sliver technique is generally first in luminous extension array, to carry out scribing to form cutting groove, then exerts pressure and makes it separated with the vertical corresponding growth substrates surface of this cutting groove, obtains a light output surface perpendicular to growth substrates, as shown in Figure 1.Such light output surface area is less, the raising of unfavorable increase lighting area.
Therefore, provide a kind of long-pending and simple sliver technique of technique of light emitting surface of light emitting diode that can increase to be necessary.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of manufacture method of light-emitting diode, for solving in prior art vertical fissure blade technolgy because light emitting surface of light emitting diode is long-pending compared with the little problem that affects chip optical efficiency.
For achieving the above object and other relevant objects, the invention provides a kind of manufacture method of light-emitting diode, described manufacture method at least comprises step:
1) provide semi-conductive substrate, in described Semiconductor substrate upper surface, form the luminous epitaxial loayer that at least comprises N-GaN layer, quantum well layer, P-GaN layer and transparency conducting layer;
2) in described luminous epitaxial loayer, define a plurality of luminous extension arrays, and according to P-GaN layer and quantum well layer described in this luminous extension array etching respectively, form a plurality of until described N-GaN Ceng Hua road, then according to Ge Gaihua Dao position, carry out scribing, form the V-type scribe line that a plurality of Cong Gegaihua road extends to described Semiconductor substrate one predetermined depth;
3) exposed N-GaN layer surface preparation N electrode in Yu Gegaihua road, and prepare P electrode on the transparency conducting layer of this luminous extension array respectively;
4) Semiconductor substrate described in attenuate;
5) adopt sliver cutter to carry out sliver to above-mentioned resulting structures, wherein, the lateral shift between the compressing position of sliver cutter and described V-type scribe line bottom with 1 ~ 150um, to obtain the bright dipping inclined-plane that connects described compressing position and described V-type scribe line bottom, to complete the manufacture of described light-emitting diode.
In the manufacture method of light-emitting diode of the present invention, described Semiconductor substrate is Sapphire Substrate or graphical sapphire substrate.
In the manufacture method of light-emitting diode of the present invention, described luminous extension array is rectangular array or triangular array.
In step 2 described in the manufacture method of light-emitting diode of the present invention) in, adopt laser cutting method to carry out scribing.
In the manufacture method of light-emitting diode of the present invention, in described step 4), adopt Semiconductor substrate described in polishing or wet etching method attenuate.
As a preferred version of the manufacture method of light-emitting diode of the present invention, in described step 5), between the compressing position of sliver cutter and described V-type scribe line bottom, there is the lateral shift of 50 ~ 100um.
In the manufacture method of light-emitting diode of the present invention, the material of described transparent conducting shell is ITO, ATO, FTO or AZO.
In the manufacture method of light-emitting diode of the present invention, adopt chemical vapour deposition technique to form described N-GaN layer, quantum well layer and P-GaN layer.
As mentioned above, the manufacture method of light-emitting diode of the present invention, there is following beneficial effect: prior to forming and comprise N-GaN layer in Sapphire Substrate, quantum well layer, the luminous epitaxial loayer of P-GaN layer and transparency conducting layer, then define luminous extension array and etch and draw road and carry out scribing according to array, form a plurality of until described N-GaN Ceng Hua road and Cong Gegaihua road extend to the V-type scribe line of described Semiconductor substrate one predetermined depth, then prepare electrode attenuate Sapphire Substrate, finally adopt sliver cutter and make the compressing position of sliver cutter and described V-type scribe line bottom between there is 1 ~ 150um lateral shift this luminous extension array is respectively carried out to sliver, to obtain bright dipping inclined-plane.The present invention carries out sliver by making to have certain lateral shift between sliver cutter compressing position and scribe line, obtains a bright dipping inclined-plane in Sapphire Substrate, has effectively increased lighting area, improves the light extraction efficiency of light-emitting diode.The present invention only need spend lower cost just can improve the light extraction efficiency of light-emitting diode, and technique is simple, is applicable to industrial production.
Accompanying drawing explanation
Fig. 1 is shown as the splinter method schematic diagram of manufacture method of the light-emitting diode of prior art.
Fig. 2 ~ Fig. 3 is shown as the structural representation that the manufacture method step 1) of light-emitting diode of the present invention presents.
Fig. 4 ~ Fig. 5 is shown as the manufacture method step 2 of light-emitting diode of the present invention) structural representation that presents.
Fig. 6 is shown as the structural representation that the manufacture method step 3) of light-emitting diode of the present invention presents.
Fig. 7 ~ Fig. 9 is shown as the structural representation that the manufacture method step 5) of light-emitting diode of the present invention presents.
Element numbers explanation
11 Semiconductor substrate
111 bright dipping inclined-planes
12 N-GaN layers
13 quantum well layers
14 P-GaN layers
15 transparency conducting layers
16 V-type scribe line
17 N electrodes
18 P electrodes
19Hua road
21 sliver cuttves
Embodiment
Below, by specific instantiation explanation embodiments of the present invention, those skilled in the art can understand other advantages of the present invention and effect easily by the disclosed content of this specification.The present invention can also be implemented or be applied by other different embodiment, and the every details in this specification also can be based on different viewpoints and application, carries out various modifications or change not deviating under spirit of the present invention.
Refer to Fig. 2 ~ Fig. 9.It should be noted that, the diagram providing in the present embodiment only illustrates basic conception of the present invention in a schematic way, satisfy and only show with assembly relevant in the present invention in graphic but not component count, shape and size drafting while implementing according to reality, during its actual enforcement, kenel, quantity and the ratio of each assembly can be a kind of random change, and its assembly layout kenel also may be more complicated.
The present embodiment provides a kind of manufacture method of light-emitting diode, and described manufacture method at least comprises step:
As shown in Fig. 2 ~ Fig. 3, first carry out step 1), semi-conductive substrate 11 is provided, in described Semiconductor substrate 11 upper surfaces, form the luminous epitaxial loayer that at least comprises N-GaN layer 12, quantum well layer 13, P-GaN layer 14 and transparency conducting layer 15.
Described Semiconductor substrate 11 is Sapphire Substrate or graphical sapphire substrate, is Sapphire Substrate in the present embodiment.Then with (CH
3)
3ga WeiGa source, NH
3for N source, SiH
4be used as N-type dopant, adopt metallo-organic compound CVD (Chemical Vapor Deposition) method at described Grown on Sapphire Substrates N-GaN layer 12; With (CH
3)
3in WeiIn source, (CH
3)
3ga WeiGa source, NH
3for N source, adopt metallo-organic compound CVD (Chemical Vapor Deposition) method growing InGaN/GaN quantum well layer 13 on described N-GaN layer 12; (CH
3)
3ga WeiGa source, NH
3for N source, Mg (C
5h
5)
2as P type dopant, adopt the metallo-organic compound CVD (Chemical Vapor Deposition) method P-GaN layer 14 of growing on described InGaN/GaN quantum well layer 13.Certainly, growth pattern can adopt common two-dimensional growth method or unsettled growth method, can select how different growth patterns as required.Then on described P-GaN layer 14, prepare transparency conducting layer 15, the material of described transparency conducting layer 15 can be ITO, ATO, FTO or AZO, is ITO in the present embodiment.
As shown in Fig. 4 ~ Fig. 5, then carry out step 2), in described luminous epitaxial loayer, define a plurality of luminous extension arrays, and according to P-GaN layer 14 and quantum well layer 13 described in this luminous extension array etching respectively, form a plurality of until described N-GaN Ceng12Hua road 19, then according to Ge Gaihua Dao19 position, carry out scribing, form the V-type scribe line 16 that Cong Gegaihua road 19 extends to described Semiconductor substrate 11 1 predetermined depth.
In described luminous epitaxial loayer, define a plurality of luminous extension arrays, described luminous extension array is rectangular array or triangular array.In the present embodiment, described luminous extension array is rectangular array.Then according to P-GaN layer 14 and quantum well layer 13 described in this luminous extension array etching respectively, form a plurality of until described N-GaN Ceng12Hua road 19, obtain exposed N-GaN layer 12, then then according to Ge Gaihua Dao19 position, carry out scribing, adopt in the present embodiment laser cutting method to carry out scribing, form the V-type scribe line 16 that a plurality of Cong Gegaihua road 19 extends to described Semiconductor substrate 11 1 predetermined depth.Certainly, in other embodiments, also can adopt saw blade patterning method to carry out scribing, it should be noted that, due to cutting process, be subject to the impact of the factors such as the thickness of luminous extension, the power of laser and backing material, the scribe line of cutting gained may be also the scribe line of approximate V-type or U-shaped scribe line.In the present embodiment, described predetermined depth is 1/3 of Sapphire Substrate thickness, certainly, in other embodiments, can be also other the degree of depth.
As shown in Figure 6, then carry out step 3), exposed N-GaN layer 12 surface preparation N electrode 17 in Yu Gegaihua road 19, and prepare P electrode 18 on the transparency conducting layer 15 of this luminous extension array respectively.
In the present embodiment, the material of described P electrode 18 and N electrode 17 is Au, certainly, in other embodiments, can be also Pt or other alloy.Described N electrode 17 preparation regions are an exposed N-GaN platform.
Then carry out step 4), Semiconductor substrate 11 described in attenuate.
Adopt Semiconductor substrate 11 described in polishing or wet etching method attenuate, in the present embodiment, adopt Semiconductor substrate 11 described in polishing attenuate, to obtain a smooth semiconductor surface.Certainly, if select the Sapphire Substrate of thinner and twin polishing, yet can it not carried out attenuate and directly enter next step.
As shown in Fig. 7 ~ Fig. 9, finally carry out step 5), adopt 21 pairs of above-mentioned resulting structures of sliver cutter to carry out sliver, wherein, the lateral shift between the compressing position of sliver cutter 21 and described V-type scribe line 16 bottoms with 1 ~ 150um, to obtain the bright dipping inclined-plane 111 that connects described compressing position and described V-type scribe line 16 bottoms, to complete the manufacture of described light-emitting diode.
Adopt 21 pairs of step 4) resulting structures of sliver cutter to carry out sliver, during sliver, make the blade compressing of described sliver cutter 21 or impact described Sapphire Substrate, the lateral shift between the compressing position of sliver cutter 21 and described V-type scribe line 16 bottoms with 1 ~ 150um, the lateral shift between the compressing position of sliver cutter 21 and described V-type scribe line 16 bottoms in the present embodiment, with 50 ~ 100um.Because Sapphire Substrate has V-type scribe line 16 after scribing, sliver cutter 21 is when compressing Sapphire Substrate, stress is not that vertical this Sapphire Substrate discharges but discharges to the bottom of this V-type scribe line 16, therefore can obtain the bright dipping inclined-plane 111 that connects described compressing position and described V-type scribe line 16 bottoms after sliver, this bright dipping inclined-plane 111 can increase the lighting area of light-emitting diode, improves the light extraction efficiency of light-emitting diode.
In sum, the manufacture method of light-emitting diode of the present invention, prior to forming and comprise N-GaN layer in Sapphire Substrate, quantum well layer, the luminous epitaxial loayer of P-GaN layer and transparency conducting layer, then define luminous extension array and etch and draw road and carry out scribing according to array, form a plurality of until described N-GaN Ceng Hua road and Cong Gegaihua road extend to the V-type scribe line of described Semiconductor substrate one predetermined depth, then prepare electrode attenuate Sapphire Substrate, finally adopt sliver cutter and make the compressing position of sliver cutter and described V-type scribe line bottom between there is 1 ~ 150um lateral shift this luminous extension array is respectively carried out to sliver, to obtain bright dipping inclined-plane.The present invention carries out sliver by making to have certain lateral shift between sliver cutter compressing position and scribe line, obtains a bright dipping inclined-plane in Sapphire Substrate, has effectively increased lighting area, improves the light extraction efficiency of light-emitting diode.The present invention only need spend lower cost just can improve the light extraction efficiency of light-emitting diode, and technique is simple, is applicable to industrial production.So the present invention has effectively overcome various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all can, under spirit of the present invention and category, modify or change above-described embodiment.Therefore, such as in affiliated technical field, have and conventionally know that the knowledgeable, not departing from all equivalence modifications that complete under disclosed spirit and technological thought or changing, must be contained by claim of the present invention.
Claims (8)
1. a manufacture method for light-emitting diode, is characterized in that, described manufacture method at least comprises step:
1) provide semi-conductive substrate, in described Semiconductor substrate upper surface, form the luminous epitaxial loayer that at least comprises N-GaN layer, quantum well layer, P-GaN layer and transparency conducting layer;
2) in described luminous epitaxial loayer, define a plurality of luminous extension arrays, and according to P-GaN layer and quantum well layer described in this luminous extension array etching respectively, form a plurality of until described N-GaN Ceng Hua road, then according to Ge Gaihua Dao position, carry out scribing, form the V-type scribe line that a plurality of Cong Gegaihua road extends to described Semiconductor substrate one predetermined depth;
3) exposed N-GaN layer surface preparation N electrode in Yu Gegaihua road, and prepare P electrode on the transparency conducting layer of this luminous extension array respectively;
4) Semiconductor substrate described in attenuate;
5) adopt sliver cutter to carry out sliver to above-mentioned resulting structures, wherein, the lateral shift between the compressing position of sliver cutter and described V-type scribe line bottom with 1 ~ 150um, to obtain the bright dipping inclined-plane that connects described compressing position and described V-type scribe line bottom, to complete the manufacture of described light-emitting diode.
2. the manufacture method of light-emitting diode according to claim 1, is characterized in that: described Semiconductor substrate is Sapphire Substrate or graphical sapphire substrate.
3. the manufacture method of light-emitting diode according to claim 1, is characterized in that: described luminous extension array is rectangular array or triangular array.
4. the manufacture method of light-emitting diode according to claim 1, is characterized in that: described step 2), adopt laser cutting method to carry out scribing.
5. the manufacture method of light-emitting diode according to claim 1, is characterized in that: in described step 4), adopt Semiconductor substrate described in polishing or wet etching method attenuate.
6. the manufacture method of light-emitting diode according to claim 1, is characterized in that: in described step 5), the peri-position of sliver cutter put and described V-type scribe line bottom between there is the lateral shift of 50 ~ 100um.
7. the manufacture method of light-emitting diode according to claim 1, is characterized in that: the material of described transparent conducting shell is ITO, ATO, FTO or AZO.
8. the manufacture method of light-emitting diode according to claim 1, is characterized in that: adopt chemical vapour deposition technique to form described N-GaN layer, quantum well layer and P-GaN layer.
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| CN201210219226.1A CN103515491A (en) | 2012-06-28 | 2012-06-28 | Manufacturing method for light-emitting diode |
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|---|---|---|---|
| CN201210219226.1A CN103515491A (en) | 2012-06-28 | 2012-06-28 | Manufacturing method for light-emitting diode |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103904174A (en) * | 2014-04-11 | 2014-07-02 | 安徽三安光电有限公司 | Manufacturing method for LED chip |
| CN104201254A (en) * | 2014-07-31 | 2014-12-10 | 华灿光电(苏州）有限公司 | Manufacturing method of light-emitting diode chip provided with omnidirectional reflector (ODR) |
| CN105098007A (en) * | 2015-06-01 | 2015-11-25 | 圆融光电科技股份有限公司 | Inverted light-emitting diode (LED) chip structure and manufacturing method thereof |
| CN106057999A (en) * | 2016-07-26 | 2016-10-26 | 聚灿光电科技股份有限公司 | LED chip and its manufacturing method |
| CN106067498A (en) * | 2016-07-26 | 2016-11-02 | 聚灿光电科技股份有限公司 | LED chip and manufacture method thereof |
| CN110291627A (en) * | 2019-04-15 | 2019-09-27 | 厦门市三安光电科技有限公司 | A kind of stealthy cutting method of LED core particle and LED chip |
| JP2019208067A (en) * | 2019-08-07 | 2019-12-05 | 日亜化学工業株式会社 | Light emitting element |
| CN111628041A (en) * | 2019-02-28 | 2020-09-04 | 中国科学院物理研究所 | GaAs-based photoelectric device, GaAs-based photoelectric device array and preparation method thereof |
| CN112993107A (en) * | 2019-12-12 | 2021-06-18 | 厦门三安光电有限公司 | Light emitting diode and manufacturing method thereof |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103904174A (en) * | 2014-04-11 | 2014-07-02 | 安徽三安光电有限公司 | Manufacturing method for LED chip |
| CN104201254A (en) * | 2014-07-31 | 2014-12-10 | 华灿光电(苏州）有限公司 | Manufacturing method of light-emitting diode chip provided with omnidirectional reflector (ODR) |
| CN104201254B (en) * | 2014-07-31 | 2018-08-17 | 华灿光电(苏州）有限公司 | A kind of preparation method for the light-emitting diode chip for backlight unit having full-shape speculum |
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| CN106057999A (en) * | 2016-07-26 | 2016-10-26 | 聚灿光电科技股份有限公司 | LED chip and its manufacturing method |
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