CN102848084B - A kind of luminous original paper cutting method with different depth of cut - Google Patents
A kind of luminous original paper cutting method with different depth of cut Download PDFInfo
- Publication number
- CN102848084B CN102848084B CN201210367628.6A CN201210367628A CN102848084B CN 102848084 B CN102848084 B CN 102848084B CN 201210367628 A CN201210367628 A CN 201210367628A CN 102848084 B CN102848084 B CN 102848084B
- Authority
- CN
- China
- Prior art keywords
- original paper
- luminous
- cutting
- luminous original
- barrier layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Led Devices (AREA)
- Dicing (AREA)
Abstract
The invention provides a kind of luminous original paper cutting method with different depth of cut, make the luminous original paper comprising multiple luminous extension unit prior to semiconductor substrate surface; Then define multiple Cutting Road according to each this luminous extension unit, and prepare spaced multiple barrier layer on each this Cutting Road; Then according to each this Cutting Road from just in the face of multiple laser pulse launched by described luminous original paper, to form multiple shallow cutting hole in the luminous original paper below barrier layer and Semiconductor substrate, and multiple dark cutting hole is formed in the luminous original paper do not stopped by barrier layer and Semiconductor substrate, then remove respectively this barrier layer; Then make electrode and form luminescence unit; Finally sliver is carried out to described luminous original paper.The present invention both ensure that in early follow-up processing procedure, wafer is not easy to break, and in turn ensure that the efficiency of breaking of wafer in sliver process, improves the efficiency of breaking of wafer; Owing to there being the shallow cutting hole of part, the absorption of cutting hole to light can be reduced, improve luminous efficiency.
Description
Technical field
The present invention relates to a kind of cutting method of semiconductor device, particularly relate to a kind of luminous original paper cutting method with different depth of cut.
Background technology
Semiconductor lighting is as new and effective solid light source, there is the remarkable advantages such as life-span length, energy-saving and environmental protection, safety, by the leap again becoming the mankind and throw light in history after incandescent lamp, fluorescent lamp, its application expands rapidly, just driving the upgrading of the industry such as traditional lighting, display, its economic benefit and social benefit huge.Just because of this, semiconductor lighting is generally regarded as one of new industry that 21 century is most with prospects, is also one of most important commanding elevation of the optoelectronic areas coming years.Light-emitting diode is by three four compounds, as GaAs(GaAs), GaP(gallium phosphide), GaAsP(gallium arsenide phosphide) etc. semiconductor make, its core is PN junction.Therefore it has the I-N characteristic of general P-N junction, i.e. forward conduction, oppositely cut-off, breakdown characteristics.In addition, under certain condition, it also has the characteristics of luminescence.Under forward voltage, electronics injects P district by N district, and N district is injected by P district in hole.Minority carrier (few son) part entering the other side region and majority carrier (how son) compound and luminous.
In recent years, the semi-conductor industry manufacturing high integrated, high performance semiconductor product develops wafer process technology in succession.In order to enhance productivity, semiconductor product everywhere uses wafer process technology to be integrated into one piece to several ten million semiconductor instruments to call on the high-purity substrate of " wafer " several.The core number that one piece of several inches of wafer will manufacture reaches several thousand, they will be divided into single circuit unit before packaging.
The cutting of laser front is a kind of conventional chip cutting means, but for the cutting of luminescent device, there is following two problems in the cutting of existing laser front: 1) carries out laser from luminescent device front and profoundly cut 11, this cutting method is conducive to sliver technique below, ensure the yield of sliver, but, if having follow-up processing procedure after profoundly cutting, easily cause breaking of wafer and cause unnecessary loss; 2) cutting hole profoundly cut can absorb the light of light-emitting component, reduces the luminous efficiency of light-emitting component, as shown in Figure 1; 3) if carry out shallow cutting 22 to chip, the probability of wafer breakage can be reduced and reduce the light-absorbing ratio of cutting hole, but shallow cutting may cause wafer to be difficult to break in sliver process and cause the reduction of yield, as shown in Figure 2.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of luminous original paper cutting method with different depth of cut, for solve in prior art profoundly cut easily cause wafer breakage and cause that luminous efficiency reduces, shallow cutting easily causes follow-up sliver time wafer be difficult to the problem of breaking.
For achieving the above object and other relevant objects, the invention provides a kind of luminous original paper cutting method with different depth of cut, described cutting method at least comprises the following steps:
1) provide semi-conductive substrate, make the luminous original paper comprising multiple luminous extension unit in described semiconductor substrate surface;
2) define multiple Cutting Road according to each this luminous extension unit, and prepare spaced multiple barrier layer on each this Cutting Road;
3) according to each this Cutting Road from just in the face of multiple laser pulse launched by described luminous original paper, to form multiple shallow cutting hole in the luminous original paper and Semiconductor substrate on barrier layer and below thereof, and multiple dark cutting hole is formed in the luminous original paper do not stopped by barrier layer and Semiconductor substrate, then remove respectively this barrier layer;
4) make electrode in each this luminous extension unit, complete the preparation of luminescence unit;
5) sliver is carried out to described luminous original paper, to obtain the multiple luminescence units be separated from each other according to each this luminescence unit.
Have in the luminous original paper cutting method of different depth of cut of the present invention, power and the focal length of the multiple laser pulses described in step 3) are equal.
Further, multiple dark cutting hole and multiple shallow cutting hole is formed in arbitrary lateral limit of described luminous extension unit.
Have in the luminous original paper cutting method of different depth of cut of the present invention, described Semiconductor substrate is Sapphire Substrate, graphical sapphire substrate, Si substrate, SiC substrate, GaP substrate, GaAsP substrate or GaAs substrate.
Have in the luminous original paper cutting method of different depth of cut of the present invention, described luminescence unit is light-emitting diode or laser diode.
Have in the luminous original paper cutting method step 5) of different depth of cut of the present invention, adopt blade splitting mode to carry out sliver to described luminous original paper.
As mentioned above, the invention provides a kind of luminous original paper cutting method with different depth of cut, make the luminous original paper comprising multiple luminous extension unit prior to semiconductor substrate surface; Then multiple Cutting Road is defined according to each this luminous extension unit, and spaced multiple barrier layer is prepared on each this Cutting Road, then according to each this Cutting Road from just in the face of multiple laser pulse launched by described luminous original paper, to form multiple shallow cutting hole in the luminous original paper below barrier layer and Semiconductor substrate, and multiple dark cutting hole is formed in the luminous original paper do not stopped by barrier layer and Semiconductor substrate, then remove respectively this barrier layer; Then make electrode in each this luminous extension unit, complete the preparation of luminescence unit; Last foundation respectively this luminescence unit carries out sliver to described luminous original paper, to obtain the multiple luminescence units be separated from each other.The present invention has following beneficial effect: Cutting Road has dark cutting hole and shallow cutting hole simultaneously, both ensure that in early follow-up processing procedure, wafer is not easy to break, and in turn ensure that the efficiency of breaking of wafer in sliver process, improves the efficiency of breaking of wafer; And owing to there being the shallow cutting hole of part, the absorption of cutting hole to light can be reduced, improve luminous efficiency.
Accompanying drawing explanation
Fig. 1 is shown as in prior art to have and profoundly cuts schematic diagram in the luminous original paper cutting method of different depth of cut.
Fig. 2 is shown as in prior art the shallow cutting schematic diagram had in the luminous original paper cutting method of different depth of cut.
Fig. 3 ~ Fig. 4 is shown as the structural representation that the luminous original paper cutting method step 1) with different depth of cut of the present invention presents.
Fig. 5 is shown as the luminous original paper cutting method step 2 with different depth of cut of the present invention) structural representation that presents.
Fig. 6 ~ Fig. 8 is shown as the structural representation that the luminous original paper cutting method step 3) with different depth of cut of the present invention presents.
Fig. 9 is shown as the structural representation that the luminous original paper cutting method step 4) with different depth of cut of the present invention presents.
Figure 10 is shown as the structural representation that the luminous original paper cutting method step 5) with different depth of cut of the present invention presents.
Element numbers explanation
101 Semiconductor substrate
102 luminous original papers
103 back of the body coating
104 barrier layers
105 luminous extension unit
106 dark cutting holes
107 shallow cutting holes
Embodiment
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this specification can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this specification also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to 3 ~ Figure 10.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
The present embodiment provides a kind of luminous original paper cutting method with different depth of cut, and described cutting method at least comprises the following steps:
As shown in Fig. 3 ~ Fig. 4, first carry out step 1), semi-conductive substrate 101 is provided, make in described Semiconductor substrate 101 surface the luminous original paper 102 comprising multiple luminous extension unit 105.
Described Semiconductor substrate 101 is Sapphire Substrate, graphical sapphire substrate, Si substrate, SiC substrate, GaP substrate, GaAsP substrate or GaAs substrate.Described luminous extension unit 105 is LED epitaxial or laser diode extension.
In the present embodiment, described Semiconductor substrate 101 is Sapphire Substrate, and described luminous original paper 102 is light-emitting diode.Certainly, in other examples, described Semiconductor substrate 101 and luminous original paper 102 can be selected according to the actual requirements, are not limited thereto the several types that place is enumerated.
Particularly, the preparation of described LED epitaxial comprises step: provide a Sapphire Substrate, forms N-GaN layer, quantum well layer, P-GaN layer and transparency conducting layer successively in described sapphire substrate surface.
As shown in Figure 5, then carry out step 2), define multiple Cutting Road according to each this luminous extension unit 105, and prepare spaced multiple barrier layer 104 on each this Cutting Road.
The effect on described barrier layer 104 is the pulses that can ensure be formed in described Semiconductor substrate 101 after laser passes through some strength, can ensure that again the strength ratio of laser arrival Semiconductor substrate 101 bends down at the environment of air or vacuum, during to cut in follow-up laser front, form the different cutting hole of the depth.In the present embodiment, described barrier layer 104 can be but not be defined as the lamination of any one or more of organic substance, metal, metal oxide etc.The intensity arriving described Semiconductor substrate 101 when laser pulse form to its material and thickness etc. relevant, can set according to different demands, to reach different technological requirements.
In the present embodiment, the interval that the width in Cutting Road direction and adjacent two barrier layers 104 are prolonged in described barrier layer 104 is equal, certainly, also can carry out according to the degree of easily splitting of described luminous original paper 102 width and the interval thereof of determining described barrier layer 104.
As shown in Fig. 6 ~ Fig. 8, then step 3) is carried out, according to each this Cutting Road from just in the face of multiple laser pulse launched by described luminous original paper 102, to form multiple shallow cutting hole 107 in the luminous original paper 102 and Semiconductor substrate 101 on barrier layer 104 and below thereof, and multiple dark cutting hole 106 is formed in the luminous original paper 102 do not stopped by barrier layer and Semiconductor substrate 101, then remove respectively this barrier layer 104.
Described cutting hole is the deteriorated structure that laser pulse is formed in described luminous original paper 102 and Semiconductor substrate 101.In the present embodiment, power and the focal length of described multiple laser pulses are equal.Due to the barrier effect on barrier layer 104, the laser pulse of equal-wattage and focal length can form multiple shallow cutting hole 107 in luminous original paper 102 below barrier layer 104 and Semiconductor substrate 101, and forms multiple dark cutting hole 106 in the luminous original paper 102 do not stopped by barrier layer and Semiconductor substrate 101.In the present embodiment, multiple dark cutting hole 106 and multiple shallow cutting hole 107 is formed in arbitrary lateral limit of described luminous extension unit 105.Because each luminous extension unit 105 has dark cutting hole 106 and shallow cutting hole 107, both ensure that wafer was not easy to break in follow-up processing procedure, in turn ensure that the efficiency of breaking of wafer in sliver process, improve the efficiency of breaking of wafer; And owing to there being the shallow cutting hole of part, the absorption of cutting hole to light can be reduced, improve luminous efficiency.It should be noted that, arrangement mode and the density of described dark cutting hole and shallow cutting hole can be determined according to the actual requirements, are not limited to cited mode herein.
Then carry out step 4), make electrode in each this luminous extension unit, complete the preparation of luminescence unit; In the present embodiment, described luminescence unit is light-emitting diode, particularly, comprises the following steps:
A) make lithography mask version and etching respectively this LED epitaxial to described N-GaN layer form N electrode and prepare region;
B) on described transparency conducting layer, prepare P electrode, and prepare on region in described N electrode and prepare N electrode.
It should be noted that, as shown in Figure 9, for general powerful light-emitting diode, this step is also included in carries out thinning to described Semiconductor substrate 101 back side, and the step of back of the body coating 103 is made at described Semiconductor substrate 101 back side, described back of the body coating 103 is generally metal level and/or dielectric layer, as the reflector of luminous original paper, to put forward the luminous efficiency of device.In general, described metal level can be the metal level of Cu, Ag, Pt, Al, Au, Ti or its compound, and described dielectric layer can be SiO
2, Ti
3o
5deng or its composite bed, but be not limited to cited several herein, in the manufacturing process of reality, all satisfactory metal level and dielectric layers can be selected according to demand.
As shown in Figure 10, finally carry out step 5), according to luminescence unit 105, sliver is carried out, to obtain the multiple luminescence units 105 be separated from each other to described luminous original paper 102.
In the present embodiment, blade splitting mode is adopted to carry out sliver to described luminous original paper 102, particularly, the position that described cutting array aimed at by described sliver cutter is oppressed described luminous original paper 102 and Semiconductor substrate 101, it is finally made to be separated from the position of cutting array, to obtain separate multiple luminescence units 105.Certainly, in other embodiments, other breaking device also can be adopted to carry out sliver.
In sum, the invention provides a kind of luminous original paper cutting method with different depth of cut, make the luminous original paper comprising multiple luminous extension unit prior to semiconductor substrate surface; Then multiple Cutting Road is defined according to each this luminous extension unit, and spaced multiple barrier layer is prepared on each this Cutting Road, then according to each this Cutting Road from just in the face of multiple laser pulse launched by described luminous original paper, to form multiple shallow cutting hole in the luminous original paper below barrier layer and Semiconductor substrate, and multiple dark cutting hole is formed in the luminous original paper do not stopped by barrier layer and Semiconductor substrate, then remove respectively this barrier layer; Then make electrode in each this luminous extension unit, complete the preparation of luminescence unit; Last foundation respectively this luminescence unit carries out sliver to described luminous original paper, to obtain the multiple luminescence units be separated from each other.The present invention has following beneficial effect: Cutting Road has dark cutting hole and shallow cutting hole simultaneously, both ensure that in early follow-up processing procedure, wafer is not easy to break, and in turn ensure that the efficiency of breaking of wafer in sliver process, improves the efficiency of breaking of wafer; And owing to there being the shallow cutting hole of part, the absorption of cutting hole to light can be reduced, improve luminous efficiency.So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (5)
1. have a luminous original paper cutting method for different depth of cut, it is characterized in that, described cutting method at least comprises the following steps:
1) provide semi-conductive substrate, make the luminous original paper comprising multiple luminous extension unit in described semiconductor substrate surface;
2) define multiple Cutting Road according to each this luminous extension unit, and prepare spaced multiple barrier layer on each this Cutting Road;
3) according to each this Cutting Road from just in the face of multiple laser pulse launched by described luminous original paper, power and the focal length of described multiple laser pulses are equal, to form multiple shallow cutting hole in the luminous original paper and Semiconductor substrate on barrier layer and below thereof, and multiple dark cutting hole is formed in the luminous original paper do not stopped by barrier layer and Semiconductor substrate, then remove respectively this barrier layer;
4) make electrode in each this luminous extension unit, complete the preparation of luminescence unit;
5) sliver is carried out to described luminous original paper, to obtain the multiple luminescence units be separated from each other according to each this luminescence unit.
2. the luminous original paper cutting method with different depth of cut according to claim 1, is characterized in that: be formed with multiple dark cutting hole and multiple shallow cutting hole in arbitrary lateral limit of described luminous extension unit.
3. the luminous original paper cutting method with different depth of cut according to claim 1, is characterized in that: described Semiconductor substrate is Sapphire Substrate, graphical sapphire substrate, Si substrate, SiC substrate, GaP substrate, GaAsP substrate or GaAs substrate.
4. the luminous original paper cutting method with different depth of cut according to claim 1, is characterized in that: described luminescence unit is light-emitting diode or laser diode.
5. the luminous original paper cutting method with different depth of cut according to claim 1, is characterized in that: step 5) in, adopt blade splitting mode to carry out sliver to described luminous original paper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210367628.6A CN102848084B (en) | 2012-09-28 | 2012-09-28 | A kind of luminous original paper cutting method with different depth of cut |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210367628.6A CN102848084B (en) | 2012-09-28 | 2012-09-28 | A kind of luminous original paper cutting method with different depth of cut |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102848084A CN102848084A (en) | 2013-01-02 |
| CN102848084B true CN102848084B (en) | 2015-09-16 |
Family
ID=47395275
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210367628.6A Active CN102848084B (en) | 2012-09-28 | 2012-09-28 | A kind of luminous original paper cutting method with different depth of cut |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102848084B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105234560B (en) * | 2015-09-30 | 2017-10-27 | 厦门市三安光电科技有限公司 | A kind of cutting method of semiconductor chip |
| CN113927177A (en) * | 2021-09-30 | 2022-01-14 | 聚灿光电科技（宿迁）有限公司 | Cutting method of strip-shaped light-emitting diode and strip-shaped light-emitting diode |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1116772A (en) * | 1994-06-02 | 1996-02-14 | 国际商业机器公司 | Design of high density structures with laser etch stop |
| CN101958374A (en) * | 2009-07-17 | 2011-01-26 | 晶元光电股份有限公司 | Light-emitting component and manufacturing method thereof |
| CN102448659A (en) * | 2009-03-31 | 2012-05-09 | 陶瓷技术有限责任公司 | Component having an overlapping laser track |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH065701A (en) * | 1992-06-23 | 1994-01-14 | Fujitsu Ltd | Manufacture of semiconductor device |
| JP4447325B2 (en) * | 2002-02-25 | 2010-04-07 | 株式会社ディスコ | Method for dividing semiconductor wafer |
| JP2005019525A (en) * | 2003-06-24 | 2005-01-20 | Disco Abrasive Syst Ltd | Method of manufacturing semiconductor chip |
| CN102142397A (en) * | 2010-01-28 | 2011-08-03 | 晶元光电股份有限公司 | Light-emitting diode (LED) and method for manufacturing same |
-
2012
- 2012-09-28 CN CN201210367628.6A patent/CN102848084B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1116772A (en) * | 1994-06-02 | 1996-02-14 | 国际商业机器公司 | Design of high density structures with laser etch stop |
| CN102448659A (en) * | 2009-03-31 | 2012-05-09 | 陶瓷技术有限责任公司 | Component having an overlapping laser track |
| CN101958374A (en) * | 2009-07-17 | 2011-01-26 | 晶元光电股份有限公司 | Light-emitting component and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102848084A (en) | 2013-01-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102751400B (en) | The cutting method of the semiconductor original paper of a kind of containing metal back of the body plating | |
| CN104078534B (en) | A kind of front cutting technique of light emitting diode | |
| CN103700735B (en) | A kind of light emitting diode and manufacture method thereof | |
| CN102881783A (en) | Method for cutting light emitting diode chip through deep etching | |
| CN103515491A (en) | Manufacturing method for light-emitting diode | |
| CN103515489A (en) | Manufacturing method for light-emitting diode | |
| CN103066018A (en) | Semiconductor unit separation method | |
| CN103700734A (en) | Manufacturing method of light-emitting diode | |
| CN103035573A (en) | Separation method for semiconductor units | |
| CN102861994B (en) | Cutting method of light-emitting element | |
| CN103715312A (en) | High-current-density and low-voltage-power light emitting diode and manufacturing method thereof | |
| CN102848084B (en) | A kind of luminous original paper cutting method with different depth of cut | |
| CN102825668B (en) | Cutting method of semiconductor part containing dielectric layer | |
| CN103681980B (en) | A kind of cutting method of the light emitting diode containing back silver-plated reflecting layer | |
| CN205752231U (en) | A kind of inverted light-emitting diode (LED) | |
| CN104134735A (en) | Light emitting diode chip structure | |
| CN103700741A (en) | Low-voltage power-type LED (Light-emitting Diode) with large current density and manufacture method thereof | |
| CN205194731U (en) | Upside -down mounting LED chip | |
| CN104347770A (en) | Light-emitting diode and manufacturing method thereof | |
| CN103378250B (en) | A kind of manufacture method of light emitting diode | |
| CN104681672B (en) | A kind of manufacture method of light emitting diode | |
| CN104347765A (en) | Light-emitting diode and manufacturing method thereof | |
| CN104465919A (en) | Light-emitting diode and manufacturing method thereof | |
| CN104183677B (en) | A kind of light emitting diode and its manufacture method | |
| CN103378219B (en) | A kind of manufacture method of light-emitting diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210302 Address after: Room 110-7, building 3, 290 Xingci 1st Road, Hangzhou Bay New District, Ningbo City, Zhejiang Province, 315336 Patentee after: Ningbo anxinmei Semiconductor Co.,Ltd. Address before: 230011 Hefei Xinzhan Industrial Park, Hefei City, Anhui Province Patentee before: HEFEI IRICO EPILIGHT TECHNOLOGY Co.,Ltd. |