CN105234560B - A kind of cutting method of semiconductor chip - Google Patents

A kind of cutting method of semiconductor chip Download PDF

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Publication number
CN105234560B
CN105234560B CN201510635391.9A CN201510635391A CN105234560B CN 105234560 B CN105234560 B CN 105234560B CN 201510635391 A CN201510635391 A CN 201510635391A CN 105234560 B CN105234560 B CN 105234560B
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China
Prior art keywords
cutting
laser
unit
mask layer
semiconductor
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CN201510635391.9A
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Chinese (zh)
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CN105234560A (en
Inventor
彭康伟
林素慧
许圣贤
林潇雄
何安和
郑建森
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厦门市三安光电科技有限公司
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Priority to CN201510635391.9A priority Critical patent/CN105234560B/en
Publication of CN105234560A publication Critical patent/CN105234560A/en
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Abstract

The present invention provides a kind of cutting method of semiconductor chip, comprises the following steps that:The laser of semiconductor wafer and an offer laser is provided;Cutting Road is defined on the semiconductor crystal wafer, and forms mask layer;The laser pass through with corresponding mask layer above and below Cutting Road position, for cutting semiconductor wafer, form semiconductor chip;The laser for cutting semiconductor wafer is multiple-unit square laser beam, and the mask layer is divided into M region, and each region includes N number of unit, and each region correspondence once treats that square laser is cut.Traditional semiconductor chip linear laser cutting is changed to square laser cutting, and the mask layer with several regions is set up between semiconductor chip and square laser, each region correspondence once treats that square laser is cut, disposably reach the cutting technique of multiple chip units, increase unit interval production capacity.

Description

A kind of cutting method of semiconductor chip

Technical field

The present invention relates to the preparation field of semiconductor devices, more particularly, to a kind of cutting method of semiconductor chip.

Background technology

On a semiconductor crystal wafer, generally there are hundreds of to connect together to thousands of chips, typically leave between them 10 μm to 150 μm of gap, this gap is referred to as Cutting Road(Saw Street).Each had into independent electrical performance The process that semiconductor chip separates or separated is called scribing or cutting(Dicing Saw).By taking LED chip as an example, in chip In processing procedure, cutting is a very important link, and current cutting technique has two kinds:Saw blade cuts and is cut by laser, wherein swashing Light is cut as new cutting mode, is widely used.As illustrated in fig. 1 and 2, conventional semiconductor wafer 1, generally comprises substrate 11 With extension functional layer 12, by taking the LED for possessing radiating light source as an example, Cutting Road is defined in LED wafer, and form mask layer 3, Scribing is carried out to LED wafer using traditional linear laser 2, every linear laser is passed through(Streak)With it is right above and below Cutting Road position The mask layer answered, needs to take about 5 ~ 10 minutes, less efficient, the production capacity of unit interval is limited per wafer.

The content of the invention

The technical problems to be solved by the invention are to overcome the deficiencies in the prior art there is provided a kind of cutting of semiconductor chip Method.The present invention proposes to use square laser cutting technique, collocation shadow mask(mask)It is used as mask layer(Barrier layer), to semiconductor The whole face formula of wafer progress is longitudinally cutting, so that the operating efficiency of improving laser cutting, increases the chip production capacity of unit interval.

In order to solve the above-mentioned technical problem, the technical solution adopted by the present invention is:A kind of cutting for semiconductor chip is provided Segmentation method, is comprised the following steps that:

(1)The laser of semiconductor wafer and an offer laser is provided;

(2)Cutting Road is defined on the semiconductor crystal wafer, and forms mask layer;

(3)The laser pass through with corresponding mask layer above and below Cutting Road position, for cutting semiconductor wafer, formed Semiconductor chip;

It is characterized in that:The laser for cutting semiconductor wafer is multiple-unit square laser beam, the mask Layer is divided into M region, and each region includes N number of unit, and each region correspondence once treats that square laser is cut.

It is preferred according the present invention, that the semiconductor crystal wafer is outer for the substrate or progress for not yet carrying out epitaxial manufacture process Prolong the chip of processing procedure.

It is preferred according the present invention, that the zone map of the mask layer is square, and in grid distribution.

It is preferred according the present invention, that the areal M of the mask layer is less than unit number N, and M >=4(M, N are certainly So count).

It is preferred according the present invention, that the unit pattern of the mask layer is square.

It is preferred according the present invention, that in the unit pattern of the mask layer, the adjacent interior boundary line of each unit and each Unit edge is laser penetration part, and the remainder of each unit is non-laser penetrating component.

It is preferred according the present invention, that the unit pattern of the laser through mask layer provides multiple-unit square laser beam.

It is preferred according the present invention, that the gross area of the M area mask layer is more than or equal to the semiconductor crystal wafer The area of piece.

It is preferred according the present invention, that the size of the semiconductor crystal wafer be 2 cun or 4 cun or 6 cun or 8 cun and more than.

It is preferred according the present invention, that the cutting form is drawn or normal fracture or dorsal fissure or aforementioned combinatorial just to draw or carrying on the back.

Compared with prior art, innovation of the invention is:Traditional semiconductor chip linear laser cutting is changed Cut for square laser(It is provided simultaneously with X-axis, Y-axis cutting function), and set up and have between semiconductor chip and square laser The mask layer in several regions, each region correspondence once treats that square laser is cut, i.e., disposably reach multiple chip units Cutting technique, so as to increase by more than 10 times in the unit interval of production capacity.

Brief description of the drawings

Accompanying drawing is used for providing a further understanding of the present invention, and constitutes a part for specification, with present invention implementation Example is used to explain the present invention together, is not construed as limiting the invention.In addition, accompanying drawing data be description summary, be not by than Example is drawn.

1:Semiconductor crystal wafer;11:Substrate;12:Extension functional layer;2:Linear laser;2’:Square laser;3:Mask layer; 31:Laser penetration part;32:Non-laser penetrating component;X:X axis Cutting Road;Y:Y-axis Cutting Road.

Fig. 1 is that traditional linear laser cuts top view to semiconductor crystal wafer.

Fig. 2 is that traditional linear laser cuts sectional view to semiconductor crystal wafer.

Fig. 3 is that the square laser of embodiment 1 cuts top view to semiconductor crystal wafer.

Fig. 4 is that the square laser of embodiment 1 cuts sectional view to semiconductor crystal wafer.

Fig. 5 is the unit pattern schematic diagram of the mask layer of embodiment 1.

Fig. 6 is that the unit pattern of linear laser through the mask layer of embodiment 1 provides multiple-unit square laser beam schematic diagram.

Fig. 7 is that the square laser of embodiment 2 cuts top view to semiconductor crystal wafer.

Fig. 8 is that the square laser of embodiment 3 cuts sectional view to semiconductor crystal wafer.

Fig. 9 is that the unit pattern of square laser through the mask layer of embodiment 3 provides multiple-unit square laser beam schematic diagram.

Figure 10 is that the square laser of embodiment 4 cuts sectional view to semiconductor crystal wafer.

Figure 11 is the unit pattern schematic diagram of the mask layer of embodiment 5.

Embodiment

The present invention is described in detail with reference to schematic diagram, before proceeding to further describe the invention, it will be appreciated that Due to that can transform specific embodiment, therefore, the present invention is not limited to following specific embodiments.It should also manage Solution, because the scope of the present invention is only defined by the following claims, therefore the embodiment used is introductory, rather than Restricted.

Embodiment 1

As shown in Fig. 3 and Fig. 4, the present embodiment provides a kind of cutting method of semiconductor chip, including following technique step Suddenly:

(1)The laser that semiconductor wafer 1 and one sends linear laser 2 is provided;

(2)Cutting Road is defined on the semiconductor crystal wafer(X and Y), and form mask layer 3;

(3)Using multiple-unit square laser beam cutting semiconductor wafer, semiconductor chip is formed.

Specifically, as shown in Figure 5 and Figure 6,3 points of the mask layer is M square region, and each region includes N number of side Shape unit, and each square region correspondence once treats that square laser is cut, and is that 8, N values are 250 in the present embodiment M values;For Adequately protect cutting when semiconductor crystal wafer, the gross area of preferably each area mask layer is more than or equal to the semiconductor die The area of disk;In the unit pattern of mask layer, the adjacent interior boundary line of each unit and each unit edge are laser penetration portion Divide 31, and the remainder of each unit is non-laser penetrating component 32, so then linear laser 2 passes through the list of foregoing mask layer 3 First pattern is to provide multiple-unit square laser beam 2 '.

By taking the LED chip that 2 cun of LED wafers make 45mil*45mil sizes as an example, conventional linear laser cuts wafer LED chip is cut into, it is necessary to draw 88 Cutting Roads(Wherein X axis Cutting Road 44, Y-axis Cutting Road 44), that is, need 88 roads Linear beam, every laser work is needed 5 seconds, operation is needed altogether 440 seconds;And use being arranged by 2 rows 4 for the present embodiment(2*4)Composition 8 The mask layer in individual region, each square region correspondence once treats that square laser is cut, and utilizes multiple-unit square laser Shu Jinhang 8 times Normal fracture(Forward direction cutting)It can complete, each laser work is needed 5 seconds, is needed altogether 40 seconds, production capacity lifts 10 times in the unit interval.

Embodiment 2

As shown in fig. 7, as different from Example 1, the present embodiment makes 45mil*45mil sizes with 4 cun of LED wafers LED chip exemplified by, wafer is cut into LED chip, it is necessary to through 352 Cutting Roads by conventional linear laser(Wherein X axis Cutting Road 176, Y-axis Cutting Road 176), that is, 352 road linear beams are needed, every laser work is needed 5 seconds, needs to make altogether Industry 1760 seconds;And the mask layer that network-like distribution is made up of 26 square regions of the present embodiment is used, its profile is similar to crystalline substance Round shape, each square region correspondence once treats that square laser is cut, using 26 cuttings of multiple-unit square laser Shu Jinhang, Possess while carrying out X-axis, Y direction cutting function, each laser work is needed 5 seconds, needs to complete altogether within 130 seconds, the unit interval Interior production capacity lifts more than 12 times.

It should be noted that from embodiment 1 and embodiment 2, same size is made for various sizes of wafer LED, the mask layer of different zones number can be made, wherein mask layer corresponding with large-sized wafer, beyond wafer Piece area ratio is less, and the square laser activity duration is shorter, so production capacity lifting is more in the unit interval.More preferably situation is The area of mask layer and wafer area equation, then the mask layer area wasted are minimum, and the production capacity of unit interval is ideal.

Embodiment 3

As shown in FIG. 8 and 9, as different from Example 1, the present embodiment passes through the unit figure of mask layer using square laser Case formation multiple-unit square laser beam, for just drawing epitaxial semiconductor wafer functional layer, until substrate, without direct normal fracture (Cut through)Semiconductor crystal wafer.

Embodiment 4

As shown in Figure 10, as different from Example 1, the present embodiment uses the semiconductor that multiple-unit square laser beam is cut Wafer is not yet carries out the substrate 1 of epitaxial manufacture process, and cutting form is drawn for the back of the body.

Embodiment 5

As shown in figure 11, as different from Example 1, the mask layer 3 of the present embodiment includes 4 square regions, that is, passes through Laser parameter is adjusted, on the premise of operation yield is ensured, the region area of the disposable operation of multiple-unit square laser beam can be with Increase, so can further improve laser work efficiency, increase the production capacity of unit interval.

It should be appreciated that above-mentioned specific embodiment is the preferred embodiments of the present invention, the scope of the present invention is not limited to The embodiment, all any changes done according to the present invention, all belongs within protection scope of the present invention.

In addition, the term such as " on ", " under ", " just ", " back of the body " in specification and in claim(If any), by with In the purpose of description, permanent relative position is not necessarily described.It should be understood that the term so used is in some suitable feelings It is interchangeable under condition.

In addition, it will be understood by those skilled in the art that the boundary between the operation of the processing step of above-described embodiment is only It is illustrative.Multiple operations can be merged into an operation, and an operation can be distributed in extra operation, and can be with Mode least partially overlapped in time performs multiple operations.

Claims (9)

1. a kind of cutting method of semiconductor chip, is comprised the following steps that:
(1)The laser of semiconductor wafer and an offer laser is provided;
(2)Cutting Road is defined on the semiconductor crystal wafer, and forms mask layer;
(3)The laser pass through with corresponding mask layer above and below Cutting Road position, for cutting semiconductor wafer, formation is partly led Body chip;
It is characterized in that:The laser for cutting semiconductor wafer is multiple-unit square laser beam, the mask layer point For M region, each region includes N number of unit, and each region correspondence once treats that square laser is cut;In the mask layer In unit pattern, the adjacent interior boundary line of each unit and each unit edge are laser penetration part, and its remaining part of each unit It is divided into non-laser penetrating component.
2. a kind of cutting method of semiconductor chip according to claim 1, it is characterised in that:The semiconductor crystal wafer Not yet to carry out the substrate of epitaxial manufacture process or carrying out the chip of epitaxial manufacture process.
3. a kind of cutting method of semiconductor chip according to claim 1, it is characterised in that:The region of the mask layer Pattern is square, and in grid distribution.
4. a kind of cutting method of semiconductor chip according to claim 1, it is characterised in that:The region of the mask layer Number M is less than unit number N, and M >=4(M, N are natural number).
5. a kind of cutting method of semiconductor chip according to claim 1, it is characterised in that:The unit of the mask layer Pattern is square.
6. a kind of cutting method of semiconductor chip according to claim 1, it is characterised in that:The laser passes through mask The unit pattern of layer provides multiple-unit square laser beam.
7. a kind of cutting method of semiconductor chip according to claim 1, it is characterised in that:The M area mask The gross area of layer is more than or equal to the area of the semiconductor crystal wafer.
8. a kind of cutting method of semiconductor chip according to claim 1, it is characterised in that:The semiconductor crystal wafer Size for 2 cun or 4 cun or 6 cun or 8 cun and more than.
9. a kind of cutting method of semiconductor chip according to claim 1, it is characterised in that:The cutting form is just Draw or the back of the body is drawn or normal fracture or dorsal fissure or aforementioned combinatorial.
CN201510635391.9A 2015-09-30 2015-09-30 A kind of cutting method of semiconductor chip CN105234560B (en)

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JP3455102B2 (en) * 1998-02-06 2003-10-14 三菱電機株式会社 Semiconductor wafer chip separation method
KR100700997B1 (en) * 2001-06-21 2007-03-28 삼성전자주식회사 Method for cutting multiple substrate and apparatus for cutting multiple substrate
JP4050534B2 (en) * 2002-03-12 2008-02-20 浜松ホトニクス株式会社 Laser processing method
CN100470767C (en) * 2004-03-26 2009-03-18 富士胶片株式会社 Device and method for joining substrates
JP2007036143A (en) * 2005-07-29 2007-02-08 Disco Abrasive Syst Ltd Machining method of semiconductor wafer
JP2008109015A (en) * 2006-10-27 2008-05-08 Disco Abrasive Syst Ltd Method and apparatus for dividing semiconductor wafer
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CN102848084B (en) * 2012-09-28 2015-09-16 合肥彩虹蓝光科技有限公司 A kind of luminous original paper cutting method with different depth of cut
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