WO2021138773A1

WO2021138773A1 - Light-emitting diode and manufacturing method therefor

Info

Publication number: WO2021138773A1
Application number: PCT/CN2020/070513
Authority: WO
Inventors: 江宾; 臧雅姝; 彭康伟; 林素慧; 刘小亮; 朱秀山; 曾炜竣; 曾明俊
Original assignee: 厦门三安光电有限公司
Priority date: 2020-01-06
Filing date: 2020-01-06
Publication date: 2021-07-15
Also published as: CN112166507B; CN112166507A

Abstract

Disclosed is a light-emitting diode, comprising: a patterned substrate, a first light-emitting semiconductor layer, an active layer, a second light-emitting semiconductor layer, a first electrical connection layer electrically connected to the first light-emitting semiconductor layer, and a second electrical connection layer electrically connected to the second light-emitting semiconductor layer, wherein one face of the pattern of the substrate serves as a light-emitting face and is located at the side of the substrate away from the first light-emitting semiconductor layer so as to improve the light extraction efficiency of the substrate; and the thickness of the substrate is not less than 200 μm, and the distance between the edge of the pattern of the substrate and the edge of the substrate ranges from 5 μm to 20 μm, so that the light extraction area is increased, thereby improving the light-emitting effect of the light-emitting diode.

Description

Light-emitting diode and manufacturing method thereof

Technical field

The present invention mainly relates to a semiconductor light emitting device, in particular to an ultraviolet light emitting diode chip technology.

Background technique

Ultraviolet LED chip refers to the wavelength λ not greater than 360nm, especially the deep ultraviolet band with wavelength λ not greater than 280nm. As a light source with the advantages of high efficiency, energy saving, and lightness, the ultraviolet LED chip can be used for air, water purification, and medical sterilization. , Disinfection, UV curing and other fields have been widely concerned.

For the flip-chip structure of UV LED chips, different types of chips have different substrate thicknesses. For example, for UVC deep ultraviolet chips, the substrate thickness is generally about 400 μm. Referring to Figure 1, in order to improve the brightness of the chip, some patterned light extraction processing will be performed on the light-emitting surface of the substrate. Generally, after the patterned light extraction processing, in the laser invisible cutting process, especially in the deeper interior of the substrate, The laser used for cutting will have the consequences of not being able to penetrate. From the figure, S is the effective laser burst point, and the deeper F becomes an ineffective laser burst point due to higher laser consumption, thereby reducing the yield of the chip cut.

Summary of the invention

technical problem

The solution to the problem

Technical solutions

In order to solve the technical problems encountered in the background art, the present invention proposes a series of process improvement schemes, and provides a method for manufacturing a light emitting diode, which includes the steps:

(1) Provide a substrate with a thickness of not less than 200μm, which is more suitable for the production of thick substrates, especially substrates with a thickness of 400μm or more. A sequence of semiconductor layers is sequentially fabricated on the substrate, including the first light-emitting A semiconductor layer, an active layer, a second light emitting semiconductor layer, a first electrical connection layer electrically connected to the first light emitting semiconductor layer, and a second electrical connection layer electrically connected to the second light emitting semiconductor layer;

(2) In order to ensure the effect of invisible cutting and prevent the laser energy from being consumed by the pattern of the substrate, it is necessary to reserve an invisible cutting position on the back of the substrate. However, for chips that require thicker substrate thickness such as UVC, multi-knife invisible cutting is required. For example, a 400μm thick substrate needs to be scribed 4 times continuously, and a very wide hidden cutting width needs to be reserved to ensure the focus of each invisible cutting, resulting in a large loss of the light extraction processing surface. Therefore, the present invention is far away from the substrate from the substrate. At different depths of the position to be cut on one side of a light-emitting semiconductor layer, m invisible laser cutting is performed in advance. According to our actual production requirements, m is mainly more than 3 times, and the effect is more prominent. In some embodiments, Where m is an integer not less than 1, which can also achieve the purpose of reducing the area of the unpatterned area of the substrate;

(3) Perform pattern production from the side of the substrate away from the first light-emitting semiconductor layer, for example, wet etching, dry etching or imprinting techniques are used to make substrate protrusions, the size of the protrusions is 200nm*200nm to 1000nm* 1000nm, usually cone-shaped or conical-like, in order to avoid bumps to interfere with laser focus, the area where the substrate is to be cut is reserved without patterning, and the width of the unpatterned is 10μm to 40μm;

(4) Perform n stealth laser cuttings from different depths of the position to be cut on the substrate, the depth of the n cuts is less than the depth of the m cuts, where n is not less than an integer of 1;

(5) After the dividing process, it is divided into a plurality of LED core particles.

According to the present invention, preferably, the active layer emits light in the deep ultraviolet range of 210nm to 280nm, or the shallow ultraviolet range of 280nm to 360nm. It should be noted that the main design of the present invention is suitable for thicker substrates. The bottom of the light-emitting diode is not limited to the wavelength. According to the optical characteristics of the ultraviolet band, especially in the deep ultraviolet band, the flip-chip light-emitting diodes with thicker substrates have better light extraction efficiency than thinner substrates.

According to the present invention, preferably, because one side of the substrate is the light-emitting surface, the substrate is made of a transparent or semi-transparent material.

According to the present invention, preferably, the substrate material includes sapphire, glass, gallium nitride or silicon carbide.

According to the present invention, preferably, the thickness of the substrate is not less than 400μm, and according to the light detection, in the ultraviolet band, especially the deep ultraviolet band, in the flip-chip light-emitting diode with a thicker substrate, it has better light extraction efficiency. The thickness of the bottom is increased, and the light extraction efficiency is improved.

According to the present invention, preferably, the thickness of the substrate is not less than 600μm. In fact, if the thickness is above 600μm, the area with no pattern can be designed to be narrower. Because the substrate is thicker, the burst point of laser stealth cutting is stable to the substrate. The less the sexual effect, the less likely to be abnormally brittle due to cutting, so invisible laser cutting with a larger m value can be performed before the graphics are made.

According to the present invention, preferably, the width of the unpatterned area on the side of the substrate away from the first light-emitting semiconductor layer is 10 μm to 30 μm, which is equivalent to half the width of the unpatterned area reserved on one side of a single core particle.

According to the present invention, preferably, there are a plurality of unpatterned areas on the substrate, and the unpatterned areas may be distributed in a grid on the substrate.

According to the present invention, preferably, the dividing process is a splitting process.

Through the above chip manufacturing process, a light-emitting diode structure can be manufactured, including: a patterned substrate, a first light-emitting semiconductor layer, an active layer, a second light-emitting semiconductor layer, and a first light-emitting semiconductor layer electrically connected to the first light-emitting semiconductor layer. The electrical connection layer, the second electrical connection layer electrically connected to the second light-emitting semiconductor layer, has a substrate thickness of not less than 200 μm, and the distance between the edge of the substrate pattern and the edge of the substrate is 5 μm to 20 μm.

According to the present invention, preferably, the substrate undergoes the laser stealth cutting process k times at least at different depths of the same vertical surface, where k is 2, 3 or an integer not less than 4 times. That is, the present invention is mainly aimed at LED products that require multiple laser stealth cutting processes.

According to the present invention, preferably, the patterned side of the substrate as the light-emitting surface is located on the side of the substrate away from the first light-emitting semiconductor layer.

According to the present invention, preferably, the thickness of the substrate is not less than 400 μm. When the substrate surface is the light-emitting surface, or part of the light is emitted through the substrate to increase the light efficiency, it is beneficial to reflect the light from the bottom. According to the light-emitting detection, take the substrate surface as the light-emitting surface as an example. In the ultraviolet band, especially the deep ultraviolet band, in flip-chip light-emitting diodes with thicker substrates, it has better light extraction efficiency. The brightness of the UVC chip has a greater correlation with the thickness. The thicker the thickness, the higher the brightness.

According to the present invention, preferably, the thickness of the substrate is not less than 600μm. In fact, when the thickness is above 600μm, the non-patterned area of the substrate can be designed to be narrower. Because the substrate is thicker, the explosion point of laser stealth cutting The less the substrate stability affects, the less likely to be abnormally brittle due to cutting, and it is more suitable for multiple cutting processes.

According to the present invention, preferably, the distance between the edge of the substrate pattern and the edge of the substrate is 5 μm to 15 μm, which has a larger pattern area for light extraction.

According to the present invention, preferably, the active layer emits light in the deep ultraviolet range of 210nm to 280nm, or the shallow ultraviolet range of 280nm to 360nm. It should be noted that the main design of the present invention is suitable for thicker substrates. The bottom of the light-emitting diode is not limited to the wavelength. According to the ultraviolet band, especially the deep ultraviolet band, the flip-chip light-emitting diodes with thicker substrates have better light extraction efficiency.

According to the present invention, preferably, considering that one side of the substrate is the light-emitting surface, the substrate is selected as a transparent or semi-transparent material.

In order to better describe the structure of the main product, according to the present invention, preferably, the first electrical connection layer and the second electrical connection layer are located on the side of the substrate away from the light-emitting surface.

According to the present invention, preferably, the pattern is a substrate protrusion with a size of 200nm*200nm to 1000nm*1000nm.

According to the present invention, preferably, the figure is conical or conical-like.

According to the present invention, preferably, the bumps are prepared by wet etching, dry etching or imprinting techniques on the substrate.

The beneficial effects of the invention

Beneficial effect

The beneficial effects of the present invention include: increasing the area of the light-emitting surface of the substrate for light extraction by changing the process steps, that is, the area of the largest substrate pattern, and improving the brightness of the chip.

Other features and advantages of the present invention will be described in the following description, and partly become obvious from the description, or understood by implementing the present invention. The purpose and other advantages of the present invention can be realized and obtained through the structures specifically pointed out in the specification, claims and drawings.

Brief description of the drawings

Description of the drawings

The accompanying drawings are used to provide a further understanding of the present invention and constitute a part of the specification. Together with the embodiments of the present invention, they are used to explain the present invention, and do not constitute a limitation to the present invention. In addition, the data in the drawings is a descriptive summary and is not drawn to scale.

FIG. 1 is a schematic cross-sectional view of a light-emitting diode chip in the background art;

2 is a schematic cross-sectional view of the light-emitting diode chip in step (1) in the first embodiment;

3 is a schematic cross-sectional view of a light-emitting diode chip that is not sectioned and invisibly cut in the first embodiment;

4 is a schematic cross-sectional view of the light-emitting diode chip in step (2) in the first embodiment;

5 is a schematic cross-sectional view of the light-emitting diode chip in step (3) in the first embodiment;

6 is a schematic cross-sectional view of the light-emitting diode chip in step (4) in the first embodiment;

7 is a schematic cross-sectional view of the light-emitting diode chip in step (5) in the first embodiment;

8 is a schematic diagram of the substrate surface of the light-emitting diode chip in step (5) in the first embodiment;

9 is a schematic cross-sectional view of the light-emitting diode chip in the second embodiment;

FIG. 10 is a schematic cross-sectional view of the light-emitting diode chip in the fourth embodiment.

Identified in the picture:

100, substrate; 210, first light emitting semiconductor layer; 220, second light emitting semiconductor layer; 230, active layer; 310, first electrical connection layer; 320, second electrical connection layer; 400, mirror surface; P, effective Laser burst point; F, invalid laser burst point; C, cutting track; L1, the width of no pattern; L2, the distance between the edge of the substrate pattern and the edge of the substrate; dotted line: laser path; arrow: light transmission path.

Invention embodiment

Embodiments of the present invention

The implementation of the present invention will be described in detail below with reference to the accompanying drawings and embodiments, so as to fully understand how the present invention applies technical means to solve technical problems and achieve the realization process of technical effects and implement them accordingly. It should be noted that, as long as there is no conflict, each embodiment of the present invention and each feature in each embodiment can be combined with each other, and the technical solutions formed are all within the protection scope of the present invention.

It should be understood that the terms used in the present invention are only for the purpose of describing specific embodiments, and are not intended to limit the present invention. It is further understood that when the terms "comprising" and "including" are used in the present invention, they are used to indicate the existence of the stated features, wholes, steps, components, and/or without excluding one or more other features, wholes, The presence or addition of steps, components, and/or combinations thereof.

In the first embodiment of the present invention, a method for manufacturing a light emitting diode is provided, which includes the steps:

Referring to FIG. 2, step (1) provides a wafer-like substrate 100. The substrate 100 is made of a transparent or semi-transparent material, such as sapphire, glass, gallium nitride, or silicon carbide. In this embodiment, sapphire is used as For example, to describe the scheme, the thickness of the substrate 100 is not less than 200μm, especially the thickness of the substrate 100 is not less than 400μm or 600μm. The first light-emitting semiconductor layer 210 and the second light-emitting semiconductor layer are made on the substrate by metal chemical vapor deposition. 220 and the active layer 230 located between the two, the first electrical connection layer 310 electrically connected to the first light emitting semiconductor layer 210, the second electrical connection layer 320 electrically connected to the second light emitting semiconductor layer 220, the first semiconductor The layer 210 includes an N-type semiconductor layer, the second light-emitting semiconductor layer 220 includes a P-type semiconductor layer, the first electrical connection layer 310 includes an N-type electrode, and the second electrical connection layer 320 includes a P-type electrode. It is a light-emitting diode with a flip-chip structure, so the side of the substrate 100 away from the first light-emitting semiconductor layer 210 is the light-emitting surface; the light-emitting wavelength of the active layer 230 ranges from 210nm to 280nm in the deep ultraviolet wavelength band, or from 280nm to 360nm. In the light ultraviolet band, the use of a thick substrate is beneficial to improve the light extraction efficiency of the substrate. In this process, only the main processes that affect the substrate pattern area and cutting yield of the light-emitting diode are emphasized, thereby affecting and improving the light extraction efficiency In this embodiment, specifically, it further includes the steps of fabricating an N-type step surface for forming an N-type electrode window; and including the steps of fabricating a cutting channel C of the light-emitting diode. At the cutting channel C, the semiconductor material is removed until The substrate 100 is exposed, and the surface of the substrate 100 can be subsequently covered with a passivation layer for protecting the light-emitting diodes. The cutting line C described here is located on the side of the substrate 100 close to the first light-emitting semiconductor layer 210.

Referring to FIG. 3, usually in a thick substrate chip process, such as invisible cutting of the substrate 100 with a thickness of 400 μm, a laser is used to remove materials in a small range of different depths within the substrate 100, in order to prevent the laser from being patterned on the substrate. Consuming energy, resulting in uneven laser cut marks of the final substrate 100, especially in the position with a deeper cutting depth. Often due to excessive energy consumption on the conductive path, it is necessary to keep the substrate 100 away from the substrate during the patterning process of the substrate. A non-patterned area is reserved at the position to be cut on one side of the first light-emitting semiconductor layer 210 to ensure the cutting yield.

When multiple invisible cuts are required, in order to ensure that there are effective cut marks on the positions to be cut at different depths, where the invisible laser focusing path is shown by the dotted line in the figure, the thicker and deeper the focus of the substrate 100 needs to be reserved The more non-patterned areas, the problem that the width of the reserved non-patterned areas may be too large, resulting in lower light extraction efficiency of the substrate 100. Therefore, a series of improvements have been made in step (2) of this embodiment.

4, step (2), from the substrate 100 away from the first light-emitting semiconductor layer 210 on the side of the position to be cut at different depths, the first batch of m stealth laser cutting, the order of laser cutting from deep From the figure, the laser cutting is performed from top to bottom, and the depth on the substrate 100 gradually becomes smaller. The position to be cut here mainly refers to the liner corresponding to the chip cutting lane C in the traditional sense. The bottom position, where m is not less than 1, especially an integer not less than 3. For example, when the thickness of the substrate 100 is 400 μm, 4 stealth laser cuttings of different depths may be required, and then this step uses 3 stealth laser cuttings.

Referring to FIG. 5, step (3), patterning is performed from the side of the substrate 100 away from the first light-emitting semiconductor layer 210. The patterning method includes but not limited to wet etching, dry etching or imprinting technology. The pattern is the size Cone-shaped or conical-like substrate protrusions from 200nm*200nm to 1000nm*1000nm. Where the substrate 100 is to be cut position without patterning to ensure effective cut marks for invisible cutting after m times are formed, the width L1 of no pattern is 10 μm to 40 μm, that is, the distance between the edge of the pattern and the edge of the pattern, preferably, no pattern The width L1 is 10 μm to 30 μm. From the perspective of the wafer, the pattern-free areas are distributed in a grid pattern.

Referring to FIG. 6, step (4), a second batch of n stealth laser cuts is performed from different depths of the substrate 100 without patterns at the position to be cut, and the depth of the n cuts is less than the depth of the m cuts, where n is an integer not less than 1, the laser cutting sequence is from deep to shallow, and the cutting depth on the substrate 100 gradually becomes smaller, because the first batch of m cuts has already achieved the effect of pre-cutting. In this step, only the larger A small number of cutters can ensure the splitting effect. In this embodiment, taking n as 1 as an example, the second batch of invisible laser cutting is close to the surface of the substrate 100, so the reserved area without patterns is small.

Referring to Figures 7 and 8, step (5) is divided into multiple LED cores by using a chip splitting process such as chip splitting. The rough surface in Figure 8 is the substrate pattern, and the smooth surface is No graphics area.

Referring to FIG. 9, in a second embodiment of the present invention, a light-emitting diode structure is provided, including: a patterned substrate 100 for improving light extraction efficiency, the substrate 100 is selected from a transparent or semi-transparent material, and the substrate The substrate 100 is, for example, sapphire, glass, gallium nitride, or silicon carbide. In this embodiment, sapphire is used as the substrate material.

The light emitted by the light-emitting diode mainly radiates outward through the substrate. The pattern is conical or conical-like, and the pattern size is 200nm*200nm to 1000nm*1000nm. The projection improves the light-emitting diode by reducing the total reflection of the substrate. Light extraction efficiency, the substrate 100 also has an epitaxial light emitting sequence, which in turn includes a first light emitting semiconductor layer 210, an active layer 230, and a second light emitting semiconductor layer 220. The first light emitting semiconductor layer 210 has a platform as an electrode window, A first electrical connection layer 310 electrically connected to the first light emitting semiconductor layer 210, a second electrical connection layer 320 electrically connected to the second light emitting semiconductor layer 220, the first electrical connection layer 310 includes a first electrode, and a second electrical connection layer 320 includes a second electrode, the first electrode is located in the electrode window, the first electrical connection layer 310 and the second electrical connection layer 320 are located on the same side of the substrate 100, and both are located on the side of the substrate 100 away from the light-emitting surface. The edge of 100 has an exposed chip scribe line C, where exposed means that the substrate 100 is not covered by semiconductor material on the scribe line C on the side of the first light-emitting semiconductor layer 210.

The pattern side of the substrate 100 is located on the side of the substrate 100 away from the first light-emitting semiconductor layer 210 as the light-emitting surface. The thickness of the substrate 100 is not less than 200 μm, especially the light-emitting diode with the thickness of the substrate 100 not less than 400 μm. The distance L2 between the edge and the edge of the substrate is 5 μm to 20 μm, which is used to enlarge the pattern light extraction area. The substrate 100 undergoes k laser stealth cutting processes at least at different depths on the same vertical surface, where k is 2, 3, 4, or More integers, the cutting laser burst point from deep to shallow, that is, the present invention is mainly aimed at light-emitting diode products that require multiple laser stealth cutting processes. The more the number of times, the greater the contribution of this embodiment to light extraction Big.

Referring to FIG. 9, in the third embodiment of the present invention, taking a flip-chip ultraviolet light emitting diode as an example, the substrate 100 is selected as a transparent or semi-transparent material, and the substrate 100 is, for example, sapphire, glass, gallium nitride or silicon carbide, The substrate 100 is used as the light-emitting surface of the light-emitting diode. In this embodiment, a patterned sapphire substrate that improves light extraction efficiency is preferably used.

The light emitted by the light-emitting diode mainly radiates outward through the substrate, and the pattern is conical or conical-like. For optical matching, the pattern size is 200nm*200nm to 1000nm*1000nm of the substrate protrusion. The substrate 100 also has an epitaxial light-emitting sequence. The epitaxial light-emitting sequence includes a first light-emitting semiconductor layer 210, an active layer 230, and a second light-emitting semiconductor layer 220. The first light-emitting semiconductor layer 210 has a platform as an electrode window and is connected to the first light-emitting semiconductor layer. The first electrical connection layer 310 electrically connected to the semiconductor layer 210, the second electrical connection layer 320 electrically connected to the second light emitting semiconductor layer 220, the first electrical connection layer 310 is located in the electrode window, the first electrical connection layer 310 and the second The electrical connection layer 320 is located on the side of the substrate 100 away from the light-emitting surface, and the edge of the substrate 100 has exposed chip dicing lanes, where exposed means that the substrate has no semiconductor on the dicing lane C on the side of the first light-emitting semiconductor layer 210 Material coverage. In some embodiments, the cutting line C may also have a passivation layer, which may partially cover the sidewalls of the epitaxial light-emitting sequence to prevent short-circuiting of the light-emitting diodes. The pattern side of the substrate 100 serves as the light-emitting surface Located on the side of the substrate 100 away from the first light-emitting semiconductor layer 210, the thickness of the substrate 100 is not less than 600 μm. When the substrate 100 is the light-emitting surface, according to light-emitting detection, the light-emitting wavelength of the active layer 230 is preferably between 210 nm and 280 nm. In the deep ultraviolet light band, or the light ultraviolet light band from 280nm to 360nm, the use of a thick substrate of not less than 600μm is beneficial to reduce the total reflection of ultraviolet light and improve the light extraction efficiency of the substrate 100, at least 150μm to 720μm thickness of the substrate From a 100 point of view, the brightness of the UVC chip has a greater correlation with the thickness. The thicker the thickness, the higher the brightness. In fact, if the thickness is above 600μm, the non-patterned area of the substrate can be designed to be narrower. For example, L2 is 5μm to 15μm. Because the substrate 100 is thicker, the explosion point of laser stealth cutting has more influence on the stability of the substrate. Less, it is not easy to be abnormally brittle due to cutting, and more channels of the first batch of invisible laser cutting can be completed first, thereby reducing the number and depth of the second batch of invisible laser cutting, which is more suitable for multiple cutting processes.

10, in the fourth embodiment of the present invention, in this embodiment, in the light-emitting diode of this embodiment, the substrate 100 is selected as a transparent or semi-transparent material, and the substrate 100 is such as sapphire, glass, nitrogen Gallium or silicon carbide, this embodiment uses, for example, a sapphire substrate. The substrate 100 further includes a first light emitting semiconductor layer 210, an active layer 230, a second light emitting semiconductor layer 210, a first electrical connection layer 310 electrically connected to the first light emitting semiconductor layer 210, and a second light emitting semiconductor layer 220. Connected to the second electrical connection layer 320, the first light-emitting semiconductor layer 210 has an exposed platform for making electrode windows, the first electrical connection layer 310 is located in the electrode window, the first electrical connection layer 310 and the second electrical connection layer 320 are located The substrate 100 is close to the side of the light-emitting surface.

The substrate 100 has a substrate pattern, the thickness of the substrate 100 is not less than 200μm, especially not less than 400μm, and the substrate pattern is conical or conical. For optical matching, the pattern size is 200nm*200nm to 1000nm*1000nm. Bottom bump, the distance L2 from the edge of the substrate pattern to the edge of the substrate is 5μm to 20μm, the substrate pattern is located on the side of the substrate 100 away from the light-emitting surface, and the purpose of the substrate pattern is to reduce the substrate absorbing the light-emitting diode indirectly from light-emitting The light emitted from the surface is, for example, the light reflected by the mirror surface 400 as shown in the light transmission path in the figure. The mirror surface 400 includes a reflective metal or an encapsulated reflective cup, thereby enhancing the overall light efficiency of the light emitting diode. The edge of the substrate has a chip dicing lane C, which is located on the side of the substrate 100 close to the light-emitting surface, and the dicing lane C may be covered by the first light-emitting semiconductor layer.

The above are only the preferred embodiments of the present invention. It should be pointed out that for those skilled in the art, without departing from the principle of the present invention, several improvements and modifications can be made, and these improvements and modifications should also be regarded as The scope of protection of the present invention.

Claims

A light-emitting diode includes: a patterned substrate, a first light-emitting semiconductor layer, an active layer, a second light-emitting semiconductor layer, a first electrical connection layer electrically connected to the first light-emitting semiconductor layer, and a second light-emitting semiconductor layer. The second electrical connection layer to be connected is characterized in that the thickness of the substrate is not less than 200 μm, and the distance between the edge of the substrate pattern and the edge of the substrate is 5 μm to 20 μm.
The light-emitting diode according to claim 1, wherein the substrate is subjected to the laser stealth cutting process k times at least at different depths of the same vertical surface, wherein k is 2, 3 or an integer not less than 4 times.
The light emitting diode according to claim 1, wherein the pattern side of the substrate serves as the light emitting surface on the side of the substrate away from the first light emitting semiconductor layer.
A light-emitting diode according to claim 1, wherein the thickness of the substrate is not less than 400 μm.
The light-emitting diode according to claim 1, wherein the thickness of the substrate is not less than 600 μm.
A light emitting diode according to claim 4 or 5, wherein the distance between the edge of the substrate pattern and the edge of the substrate is 5 μm to 15 μm.
The light-emitting diode according to claim 1, wherein the light-emitting wavelength of the active layer is between 210 nm and 280 nm, or between 280 nm and 360 nm.
The light emitting diode according to claim 1, wherein the substrate is made of transparent or semi-transparent material.
The light emitting diode according to claim 1, wherein the substrate material comprises sapphire, glass, gallium nitride or silicon carbide.
The light emitting diode according to claim 3, wherein the first electrical connection layer and the second electrical connection layer are located on the side of the substrate away from the light-emitting surface.
The light-emitting diode according to claim 1, wherein the pattern is a substrate protrusion with a size of 200nm*200nm to 1000nm*1000nm.
A light-emitting diode according to claim 9, wherein the pattern is conical or conical-like.
The light emitting diode according to claim 9, wherein the protrusions are prepared by wet etching, dry etching or imprinting technology on the substrate.
A method for manufacturing a light-emitting diode includes the steps:

(1) Provide a substrate, the thickness of the substrate is not less than 200μm, the first light-emitting semiconductor layer, the active layer, the second light-emitting semiconductor layer are sequentially fabricated on the substrate, and the first electrical connection is electrically connected to the first light-emitting semiconductor layer Layer, a second electrical connection layer electrically connected to the second light-emitting semiconductor layer;

(2) From different depths of the position to be cut on the side of the substrate away from the first light-emitting semiconductor layer, perform stealth laser cutting m times, where m is not less than an integer of 1;

(3) Perform patterning from the side of the substrate away from the first light-emitting semiconductor layer, where the substrate to be cut position is not patterned, and the width of the unpatterned is 10 μm to 40 μm;

(4) Perform n stealth laser cuttings from different depths of the position to be cut on the substrate, the depth of the n cuts is less than the depth of the m cuts, where n is not less than an integer of 1;

(5) After the dividing process, it is divided into a plurality of LED core particles.
The method for manufacturing a light emitting diode according to claim 14, wherein the light emission wavelength of the active layer is between 210 nm and 280 nm, or between 280 nm and 360 nm.
The method for manufacturing a light emitting diode according to claim 14, wherein the substrate is made of transparent or semi-transparent material.
The method for manufacturing a light emitting diode according to claim 14, wherein the substrate material comprises sapphire, glass, gallium nitride or silicon carbide.
The method for manufacturing a light emitting diode according to claim 14, wherein the thickness of the substrate is not less than 400 μm.
The method for manufacturing a light emitting diode according to claim 14, wherein the thickness of the substrate is not less than 600 μm.
The manufacturing method of a light emitting diode according to claim 18 or 19, wherein the width of the non-patterned area of the substrate on the side away from the first light emitting semiconductor layer is 10 μm to 30 μm.
The method for manufacturing a light-emitting diode according to claim 14, wherein the substrate has a plurality of non-patterned regions.
21. The method for manufacturing a light emitting diode according to claim 21, wherein the patternless areas are distributed in a grid on the substrate.
The method for manufacturing a light emitting diode according to claim 14, wherein the dividing process is a splitting process.
The method for manufacturing a light emitting diode according to claim 14, wherein m is an integer not less than 3.
The method for manufacturing a light emitting diode according to claim 14, wherein the pattern is a substrate protrusion with a size of 200nm*200nm to 1000nm*1000nm.
The manufacturing method of a light emitting diode according to claim 25, wherein the figure is conical or conical-like.
The method for manufacturing a light-emitting diode according to claim 14, wherein the depth of the m-th cut and the n-th cut is from deep to shallow.
The method for manufacturing a light emitting diode according to claim 14, wherein the pattern is made by wet etching, dry etching or imprinting technology to make the substrate pattern.