CN102544251B - Manufacturing method of large-power vertical light-emitting diode - Google Patents
Manufacturing method of large-power vertical light-emitting diode Download PDFInfo
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- CN102544251B CN102544251B CN201010622207.4A CN201010622207A CN102544251B CN 102544251 B CN102544251 B CN 102544251B CN 201010622207 A CN201010622207 A CN 201010622207A CN 102544251 B CN102544251 B CN 102544251B
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Abstract
The invention provides a manufacturing method of a large-power vertical light-emitting diode, relating to the technical field of a semiconductor photoelectric device. The manufacturing method disclosed by the invention comprises the following steps of: 1) generating an epitaxial wafer on a sapphire substrate; 2) evaporating a reflection metal layer on a P-type GaN-based semiconductor layer; 3) forming a current stopping layer on an N-electrode area and forming a protection type passivation layer on the side wall of a groove; 4) forming an isolation groove; 5) filling photoresist I into the isolation groove; 6) depositing a diffusion impervious layer on the surface of the device, electrically plating a seeding layer, etching to expose the diffusion impervious layer, and coating thick photoresist II; 7) forming a metal supporting layer above the device; 8) stripping the sapphire substrate from the device and cleaning; 9) roughening the surface and evaporating an N-type electrode; 10) cutting the device to from core particles; and 11) grinding and polishing the surface of the sapphire substrate. According to the manufacturing method disclosed by the invention, the stability of an LED (Light-Emitting Diode) in a vertical structure can be improved and the yield of the finished core particles is improved.
Description
Technical field
The present invention relates to semiconductor photoelectric device manufacturing technology field, the particularly manufacture method of GaN based high-power light emitting diode (LED) chip with vertical structure.
Background technology
GaN base LED, as solid-state illumination light source, has the advantages such as photoelectric conversion efficiency is high, environmental protection, life-span length, fast response time.Along with the development and application take GaN as basic high-brightness LED s, new generation of green environment protection solid lighting source GaN base LEDs has become the focus that people pay close attention to.Because non-conductive for the sapphire substrate of growing, traditional GaN base LED adopts planar electrode structure, P type and N-shaped contact electrode are all at upper surface, and N-shaped electrode employing photoetching-etching method is carved into N-shaped and prepares.Forward LED is simple in structure, is easy to processing, but because this structure has been sacrificed larger light-emitting area, and because P type GaN carrier concentration is low, need to plate translucent or transparent current-diffusion layer thereon.This kind of structure is because needs dispel the heat by sapphire simultaneously, so light extraction efficiency and the radiating efficiency of positive cartridge chip are all not high, regional area electric current is excessive, has affected device electricity, optical characteristics and long-term reliability.
At present, vertical structure LED becomes the hot issue of research.In prior art, thin-film LED mainly adopts is that material using conductive and heat-conductives such as metal or Si is as sapphire substrate, the method of peeling off by excimer laser is removed original sapphire sapphire substrate, forms vertical stratification core grain after cutting and separating.With traditional positive assembling structure, compare with inverted structure, the N electrode of the chip of vertical stratification and P electrode are respectively on upper and lower surfaces, and the epitaxial loayer of N electrode or P electrode and chip contacts completely, make chip have better electric current injection efficiency and thermal conductivity.But, decomposition due to GaN in the process of laser lift-off produces thermal shock, easily causes the damage of extension and breaks, and electroplates the metal sapphire substrate producing because the effect of internal stress produces the phenomenon of cracking, warpage simultaneously, the yield of core grain is reduced, increased production cost.
Summary of the invention
In order to solve above-mentioned problems of the prior art, the object of this invention is to provide a kind of manufacture method of high-power vertical LED.It can improve the stability of vertical structure LED, improves the yield of finished product core grain.
In order to reach foregoing invention object, technical scheme of the present invention realizes as follows: a kind of manufacture method of high-power vertical LED, and its step is:
1) grow successively on sapphire substrate N-type GaN based semiconductor, quantum well active area and P type GaN based semiconductor epitaxial wafer;
2) evaporation reflective metal layer on P type GaN based semiconductor, high annealing under the environment of nitrogen, makes to form ohmic contact between reflective metal layer and P type GaN based semiconductor;
3) by etching method, at device upper surface, form table top, deposit multilayer deielectric-coating, and form current barrier layer by being etched in N electrode district, and form protection type passivation layer at the sidewall of groove;
4) with etching method position between two relative passivation layers, form the isolated groove to downward-extension, final etching stopping is at sapphire substrate upper surface;
5) in isolated groove, fill photoresist one;
6), in device surface deposition one deck diffusion impervious layer re-plating one deck Seed Layer, chemical corrosion is exposed the diffusion impervious layer at isolated groove position and is applied thick photoresist two thereon;
7) above device, electroplate and form metal supporting layer, internal stress is eliminated in annealing;
8) device is turned over to turnback, sapphire substrate and device are peeled off, and clean;
9) on N-type GaN based semiconductor surface, carry out surface coarsening, etch N-type slot electrode, deposited by electron beam evaporation method evaporation N-type electrode;
10) device is cut from isolated groove center and form core grain;
11) sapphire substrate surface is ground and polishing, the core grain of having cut apart is carried out test and the sorting of photoelectric parameter simultaneously.
In above-mentioned manufacture method, described on sapphire substrate growing epitaxial sheet adopt metal organic gas chemistry precipitation method.
In above-mentioned manufacture method, described reflective metal layer is to consist of the alloy of one or more elements in Al, Ag, Pd, Pt, Ti, Ni, Au, Cu, Cr, and thickness is
described Seed Layer is to consist of the alloy of one or more elements in Ni, Al, Cr, Ta, Au, Ag, Cu, Sn, Ti.Described metal supporting layer is to consist of the alloy of one or more combination in any in Ni, Cu, Au, Fe, Co, Mo.Described multilayer dielectric film is by SiO
2, SiN, TiO
2, Al
2o
3in any one or medium form.
In above-mentioned manufacture method, described metal supporting layer annealing temperature below 100-500 ℃, annealing time 10-100min.
In above-mentioned manufacture method, described sapphire substrate and device are peeled off is to process by radium-shine lift-off technology LLO.
In above-mentioned manufacture method, the method for described etching adopts inductively coupled plasma ICP method or reactive ion etching RIE method.
In above-mentioned manufacture method, the described method that adopts tangent or the back of the body to cut that device is cut.
The present invention is owing to having adopted said method, it is with the method etching GaN of two step etchings, core grain is isolated mutually, and with photoresist isolated groove is filled up form isolation buffer district, the shock wave producing in the time of not only can reducing laser lift-off and the cutting that facilitates chip, the while can also prevent the bubble phenomenon that the thick glue process in rear road occurs due to the out-of-flatness of substrate surface; The film formed passivation layer of multilayer dielectricity not only can guarantee the binding ability of passivation layer and core grain, can also avoid the short circuit phenomenon of active layer, reduces the internal stress of passivation layer; Diffusion impervious layer can prevent the metal diffusion in Seed Layer and destroy ohmic contact, can also guarantee the adhesion of reflective metal layer and photoresist, is conducive to the stable of electroplating technology; By the adjusting of plating rate and solution composition, form the metal supporting layer of different structure, composition and hardness, after metal supporting layer forms, more further eliminate the internal stress of sapphire substrate by slow annealing, reduce angularity; Thick photoresist isolation structure in Seed Layer can reduce the difficulty of cutting sapphire substrate effectively, is conducive to the separation of chip.Compared with the existing technology, vertical stratification of the present invention has been avoided the impact of the destabilizing factor in manufacture process on LED device performance effectively, reduced the processing step of N face, reduced the evenness of sapphire substrate to the impact of processing performance, there is yield high, the advantages such as power is large, electric current good dispersion, meet the needs of LED chip large-scale production.
Below in conjunction with the drawings and specific embodiments, the invention will be further described.
Accompanying drawing explanation
The schematic flow sheet of Fig. 1 to Figure 11 manufacture method of the present invention;
Figure 11 is the structural representation of vertical LED of the present invention.
Specific implementation method
Method step of the present invention is:
1), referring to Fig. 1, adopt metal-organic chemical vapor deposition equipment method on sapphire substrate 301, grow successively N-type GaN based semiconductor 302, quantum well active area 303 and P type GaN based semiconductor 304;
2) referring to Fig. 2, evaporation reflective metal layer 305 on P type GaN based semiconductor 304, thickness is
high annealing 10-30min under the environment of nitrogen, makes to form ohmic contact between reflective metal layer 305 and P type GaN based semiconductor 304, and strengthens the adhesion between the two;
3) referring to Fig. 3, adopt inductively coupled plasma ICP etching to form table top, adopt plasma reinforced chemical vapour deposition method PECVD deposit multilayer deielectric-coating, and form current barrier layer 306 by being etched in N electrode district, for dispersed CURRENT DISTRIBUTION, and form protection type passivation layer 312 at the sidewall of groove;
4) referring to Fig. 4, adopt inductively coupled plasma ICP to be etched in position between two relative passivation layers 312 and form the isolated groove to downward-extension, final etching stopping is on sapphire substrate 301 surfaces, by isolation mutually between core grain;
5) referring to Fig. 5, in isolated groove, fill photoresist 1, the impact producing when reducing laser lift-off prevents the bubble that the thick glue process in rear road occurs due to the out-of-flatness of substrate surface simultaneously;
6), referring to Fig. 6, in device surface deposition one deck diffusion impervious layer re-plating one deck Seed Layer 308, chemical corrosion is exposed the diffusion impervious layer at isolated groove position and is applied thick photoresist 309 thereon;
7) referring to Fig. 7, by electroplating technology, forming thickness is tens metal supporting layer 310 to hundreds of micron, when electroplating, by the adjusting of plating rate and solution composition, form the supporting layer of different structure, composition and hardness, in order to eliminate due to the GaN internal stresss that produce different from metal supporting layer 310 coefficients of expansion, after plating completes, annealing 10-100min further eliminates internal stress, reduces angularity;
8) referring to Fig. 8, device is overturn, sapphire substrate 301 and device are peeled off, sapphire substrate 301 is peeled off with the ultraviolet excimer laser of KrF; Peeled off and carried out surface clean with HCl afterwards;
9) referring to Fig. 9, on N-type GaN based semiconductor 302 surfaces, by the method for wet etching, carry out surface coarsening, in order to improve the surperficial light extraction efficiency of device, adopt inductively coupled plasma ICP to etch N-type slot electrode, deposited by electron beam evaporation method evaporation N-type electrode 311;
10), referring to Figure 10, the method for cutting with tangent or the back of the body cuts into from isolated groove center device and forms core grain;
11), referring to Figure 11, to the needs that sapphire substrate 301 grinds and polishing encapsulates to adapt to rear road, the core grain of having cut apart is carried out test and the sorting of photoelectric parameter simultaneously.
The above-mentioned the preferred embodiment of the present invention that discloses; be not intended to limit the present invention, for those of ordinary skill in the art, do not departing under the prerequisite of method of the present invention and scope; the consistent various improvement of technology path of making for the present invention, also all belong to protection scope of the present invention.
Claims (6)
1. a manufacture method for high-power vertical LED, its step is:
1) grow successively on sapphire substrate (301) N-type GaN based semiconductor (302), quantum well active area (303) and P type GaN based semiconductor (304) epitaxial wafer;
2) at the upper evaporation reflective metal layer (305) of P type GaN based semiconductor (304), high annealing under the environment of nitrogen, makes to form ohmic contact between reflective metal layer (305) and P type GaN based semiconductor (304);
3) by etching method, at device upper surface, form table top, deposit multilayer deielectric-coating, and form current barrier layer (306) by being etched in N electrode district, and form protection type passivation layer (312) at the sidewall of groove;
4) with etching method position between two relative passivation layers (312), form the isolated groove to downward-extension, final etching stopping is at sapphire substrate (301) upper surface;
5) in isolated groove, fill photoresist one (307);
6), in device surface deposition one deck diffusion impervious layer re-plating one deck Seed Layer (308), chemical corrosion is exposed the diffusion impervious layer at isolated groove position and is applied thick photoresist two (309) thereon;
7) above device, electroplate and form metal supporting layer (310), internal stress is eliminated in annealing;
8) device is turned over to turnback, sapphire substrate (301) and device are peeled off, and clean;
9) on N-type GaN based semiconductor (302) surface, carry out surface coarsening, etch N-type slot electrode, deposited by electron beam evaporation method evaporation N-type electrode (311);
10) device is cut from isolated groove center and form core grain;
11) sapphire substrate (301) surface is ground and polishing, the core grain of having cut apart is carried out test and the sorting of photoelectric parameter simultaneously.
2. manufacture method according to claim 1, is characterized in that, described in the organic gas chemistry precipitation method of the upper growing epitaxial sheet employing metal of sapphire substrate (301).
3. manufacture method according to claim 1 and 2, is characterized in that, described reflective metal layer (305) is to consist of the alloy of one or more elements in Al, Ag, Pd, Pt, Ti, Ni, Au, Cu, Cr, and thickness is 1000-10000; Described Seed Layer (308) is to consist of the alloy of one or more elements in Ni, Al, Cr, Ta, Au, Ag, Cu, Sn, Ti; Described metal supporting layer (310) is to consist of the alloy of one or more combination in any in Ni, Cu, Au, Fe, Co, Mo; Described multilayer dielectric film is by SiO
2, SiN, TiO
2, Al
2o
3in any one or medium form.
4. manufacture method according to claim 3, is characterized in that, described sapphire substrate (301) and device are peeled off is to process by radium-shine lift-off technology LLO.
5. manufacture method according to claim 4, is characterized in that, the method for described etching adopts inductively coupled plasma ICP method or reactive ion etching RIE method.
6. manufacture method according to claim 4, is characterized in that, the described method that adopts tangent or the back of the body to cut that device is cut.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103996773B (en) * | 2014-06-06 | 2016-09-28 | 厦门市三安光电科技有限公司 | A kind of inverted light-emitting diode (LED) structure and preparation method thereof |
| CN104157765B (en) * | 2014-08-07 | 2017-06-09 | 湘能华磊光电股份有限公司 | A kind of light emitting semiconductor device and preparation method thereof |
| CN106449903B (en) * | 2016-09-29 | 2019-08-02 | 华灿光电（浙江）有限公司 | A kind of light-emitting diode chip for backlight unit and preparation method thereof |
| CN106571414B (en) * | 2016-11-09 | 2019-11-19 | 佛山市国星半导体技术有限公司 | A kind of manufacturing method of light emitting diode (LED) chip with vertical structure |
| CN109545931A (en) * | 2018-12-17 | 2019-03-29 | 佛山市国星半导体技术有限公司 | A kind of vertical structure LED wafer and stripping means |
| DE102018132824A1 (en) * | 2018-12-19 | 2020-06-25 | Osram Opto Semiconductors Gmbh | METHOD FOR PRODUCING AN OPTOELECTRONIC LIGHTING DEVICE |
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| CN1387266A (en) * | 2002-06-25 | 2002-12-25 | 光磊科技股份有限公司 | LEC with higher luminous efficiency |
| CN1564331A (en) * | 2004-04-05 | 2005-01-12 | 清华大学 | Method of mfg. GaN-base LED |
| CN101241964A (en) * | 2007-12-24 | 2008-08-13 | 厦门三安电子有限公司 | A luminescent part for laser GaN base peeling based on compound separation method and its making method |
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| KR100667508B1 (en) * | 2004-11-08 | 2007-01-10 | 엘지전자 주식회사 | Light emitting device and method for fabricating the same |
| KR101525076B1 (en) * | 2008-12-15 | 2015-06-03 | 삼성전자 주식회사 | Fabricating method of light emitting element |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1387266A (en) * | 2002-06-25 | 2002-12-25 | 光磊科技股份有限公司 | LEC with higher luminous efficiency |
| CN1564331A (en) * | 2004-04-05 | 2005-01-12 | 清华大学 | Method of mfg. GaN-base LED |
| CN101241964A (en) * | 2007-12-24 | 2008-08-13 | 厦门三安电子有限公司 | A luminescent part for laser GaN base peeling based on compound separation method and its making method |
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Application publication date: 20120704 Assignee: Nantong Tongfang Semiconductor Co.,Ltd. Assignor: Tongfang Opto-electronic Co., Ltd. Contract record no.: 2015990000187 Denomination of invention: Manufacturing method of large-power vertical light-emitting diode Granted publication date: 20140507 License type: Exclusive License Record date: 20150413 |
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Effective date of registration: 20170622 Address after: 226015 Nantong economic and Technological Development Zone, Jiangsu, Oriental Avenue, No. 499 Patentee after: Nantong Tongfang Semiconductor Co.,Ltd. Address before: 100083, A, 2901, Tongfang science Plaza, Beijing, Haidian District Patentee before: Tongfang Opto-electronic Co., Ltd. |