CN1905223A - LED light source packaging structure for low-temp. coburning ceramic by thermoelectric separating design - Google Patents
LED light source packaging structure for low-temp. coburning ceramic by thermoelectric separating design Download PDFInfo
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- CN1905223A CN1905223A CNA2006100620086A CN200610062008A CN1905223A CN 1905223 A CN1905223 A CN 1905223A CN A2006100620086 A CNA2006100620086 A CN A2006100620086A CN 200610062008 A CN200610062008 A CN 200610062008A CN 1905223 A CN1905223 A CN 1905223A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
The invention provides an LED light source packaging structure of low temperature co-fired ceramic designed by thermoelectric separation, mainly comprising low-temperature co-fired ceramic (LTCC) substrate and LED chip fixed on the substrate, where the top surface of the substrate has pits to hold LED chips; the substrate is a plate in shape, and conducting circuit and heat conducting circuit are mutually independent. And the LTCC substrate uses various ceramic materials as the main, the inner and outer electrodes use Ag, Au, Cu, Ni or other metal, the number of layers and the circuits are determined according to the design requirements. For further improving heat conducting performance, it adopts special heat conducting columns and pads to cool LEDs, thus transferring heat through connected Ag columns to external cooler; and it is applied to multi-chip packaging, able to be used in tricolor or more-color LED packaging. And the invention provides a method for preparing high-brightness LED light source using it.
Description
Technical field
The present invention relates to semiconductor technology, be specifically related to light emitting diode (Light-Emitting Diode, LED) encapsulation technology of light source and LTCC (Low Temperature Cofired Ceramic, LTCC) technology; The invention still further relates to the encapsulating structure of this light source.
Technical background
Along with the appearance of ultra-bright LED, its efficient is more and more higher, and price descends gradually.Simultaneously LED have life-span length, vibration resistance, luminous efficiency height, noiseless, be not afraid of characteristics such as low temperature, no mercury pollution problem and cost performance height.Ultra-high brightness LED has been expanded LED greatly and has been shown and the lighting source Application for Field at various signals, mainly contains the inside and outside lamp of automobile, various traffic lights, indoor and outdoor information display screen and backlight.
Therefore, the research and development of high-brightness LED light source and industrialization will become an important directions of Future Development, and its key problem in technology is the luminous flux that improves constantly luminous efficiency (lm/W) and each device (assembly).The used epitaxial material of power-type LED adopts growth technology and the multi-quantum pit structure of MOCVD, though its internal quantum efficiency also needs further to improve, the biggest obstacle that obtains high luminous flux is still chip, and to get optical efficiency very low.Because semiconductor differs bigger with the refractive index of encapsulation epoxy, cause the inner cirtical angle of total reflection very little, the light that active layer produces has only fraction to be removed, and major part is absorbed through repeatedly reflecting at chip internal, becomes the ultra-high brightness LED chip and gets the very low basic reason of optical efficiency.
Existing product has been owing to continued to use traditional indicator light type LED manufacturing process and encapsulating structure, use be the relatively poor resin-encapsulated material of heat conductivity, its packaging thermal resistance height can not satisfy the requirement of abundant heat radiation, needs to strengthen package dimension and improve thermal diffusivity.Poor radiation causes the temperature of led chip to raise, and causes the device optical attenuation to accelerate.LED according to this conventional theory design and making can't reach high efficiency and high-throughout requirement at all, thereby can not reach the requirement of high-brightness LED light source.
The high-brightness LED light source is being worked under big electric current, therefore must the encapsulating material of deterioration solve the optical attenuation problem by using effective heat radiation and adopting not, and shell and encapsulation have become one of key technology of development power type LED light source.
In opto-electronic device, encapsulation often accounts for the 60%-90% of cost, and wherein 80% manufacturing cost comes from assembling and packaging technology again, therefore is encapsulated in to have played the part of very important role on reducing cost, and becomes the heat subject of developed country's research in recent years.Also must pay attention to the comprehensive Design ability for the photoelectron encapsulation, this mainly comprises optical design, electric design, thermal design and Machine Design.
LTCC Technology (LTCC) is the integrated assembly technology of a kind of in addition people of rising in recent years multidisciplinary intersection of attracting attention, and relates to extensive fields such as circuit design, material science, microwave technology.It is the technology that is used to realize high integration, high-performance electronic encapsulation, is providing huge potential aspect flexibility, wiring density and the reliability of design.Because it provides reasonable solution route in the information age for the components and parts of various electronic systems and module miniaturization, lightweight, therefore more and more come into one's own in the world at home, be widely used in baseplate material, encapsulating material and microwave device material etc.
So-called LTCC technology, exactly the low-temperature sintered ceramics powder is made the accurate and fine and close green band of thickness, on the green band, utilize technologies such as laser drilling, micropore slip casting, accurate conductor paste printing to make the circuitry needed figure, and a plurality of passive components can be imbedded wherein, overlap together then,, make multilayer interconnection substrate at 800 ℃～900 ℃ following sintering, can mount IC and active device on its surface, make passive/active integrated functional module.
LTCC combines the characteristics of High Temperature Co Fired Ceramic technology and thick film technology, provides a kind of high density, high reliability, high-performance to reach interconnect package form cheaply.LTCC will become integrated, the modular preferred manner of following electronic device with its excellent electricity, machinery, calorifics and operational characteristic.
Utilize LTCC to prepare the chip passive integrated devices and module has many advantages, at first, multilayer interconnection has improved the module reliability, has reduced volume, and one-shot forming has improved production efficiency, adapts to produce in batches; Secondly, can adapt to big electric current and high-temperature stability requirement, have good heat conductivity than common PCB circuit substrate; The ltcc substrate ceramic material, dielectric constant is less, and very good high frequency characteristics is arranged; But embedded passive component helps improving the packaging density of circuit; Have temperature characterisitic preferably, as less thermal coefficient of expansion, less resonance frequency temperature coefficient is that the multicore sheet is assembled first-selected multilager base plate; Can manufacture nearly tens layers circuit substrate; Can make the fine rule structure, live width/spacing can reach 100 μ m～200 μ m, even can reach 50 μ m; The precision height is printed in the once sintered moulding of manufacture craft, and multilager base plate green band can progressively be checked, helping production efficiency improves, reduce cost, avoid the multiple high temp sintering simultaneously, and reduce and the percent defective increase because of the middle wrong properties of product of bringing in the manufacture process.
Therefore, ltcc substrate and interconnection material are the ideal materials of photoelectron encapsulation.
The patent documentation of relevant LED is a lot, and for example CN1296296 has narrated the LED device that upside-down mounting is welded.CN1215503 and 1315057 discloses LED device and preparation thereof, wherein makes some miniature projections on electrode and connects so that reduce electrode size and improve.US20050161682A1 proposes a kind of LED encapsulating structure that is suitable for higher temperature work, the substrate that is to use metal to combine with LTCC, and on LTCC, form conduction and thermal land.But above patent does not have one piece of encapsulating structure that discloses thermoelectric separate design, does not have the clear and definite special-purpose heating column design of using in substrate yet.
Summary of the invention
The object of the present invention is to provide a kind of led light source encapsulating structure that uses the LTCC (LTCC) of thermoelectric separate design.
Another object of the present invention provides a kind of method of utilizing this encapsulating structure to prepare the high-brightness LED light source.
The encapsulating structure of high-brightness LED light source of the present invention mainly comprises low-temperature co-fired ceramic substrate 1 and the led chip 2 that is fixed on the substrate, and the upper surface of substrate has the pit of placing led chip.Low-temperature co-fired ceramic substrate is a tabular, and conductive path and thermal conducting path are independent mutually.
The profile of ltcc substrate 1 is determined as required, produces in batches in order to save material and to be convenient to, and generally is preferably rectangle.The material of ltcc substrate is based on various ceramic raw materials, and the coefficient of heat conduction is greater than 3.0W/mK.Aluminium oxide (Al as 96% or 99%
2O
3), beryllium oxide (BeO) and aluminium nitride (AlN).The coefficient of heat conduction of aluminium oxide ceramics can reach 20～30W/mK, and the coefficient of heat conduction of aluminium nitride ceramics is more up to 170～180W/mK, and thermal conductivity is high more, can simplify thermal design more, obviously improves the life-span and the reliability of circuit; The ectonexine electrode uses metals such as silver, gold, copper or nickel, and the number of plies of ltcc substrate and circuit are wherein decided according to the design needs.The thermal coefficient of expansion of whole base plate is not more than 7 * 10
-6/ ℃.
The manufacture craft flow process of LTCC is generally: powder making-curtain coating substrate making-punching-electric slurry filling perforation and internal layer printing-pressing-sintering-cleaning-skin printing-Performance Detection.
Fig. 1 is the structural profile schematic diagram of LTCC.Wherein 11 is each layer ceramic layer, the 12nd, be used to realize the intercommunicating pore that is electrically connected between each layer, and the 13rd, circuit, the electrode of each internal layer printing, the 14th, circuit, the electrode of outer printing.Each ceramic layer spreading mass becomes required circuit, electrode according to design and printing, and according to designing by the mutual conducting of slurry in the intercommunicating pore, forms required electrode and the electric path of LED element.
From its structure as can be seen, LTCC realizes multilayer interconnection, and can make the fine rule structure, adds characteristics such as its good heat conductivility, thermal coefficient of expansion, can adapt to big electric current and high temperature resistant requirement, has improved reliability, has reduced volume.And optics, electricity and calorifics function can be integrated, not only strengthen the product performance of high brightness, power-type LED, can also simplify encapsulating structure and packaging technology, reduce size, be very helpful for improving the flexible design degree.
In order further to improve heat conductivility, ltcc substrate is carried out thermoelectric separate design, as Fig. 2, shown in Figure 3.In this structure, conductive path and thermal conducting path are independent mutually, rather than shared, adopt special-purpose heating column and thermal land that LED is dispelled the heat, and can increase substantially heat dispersion.Wherein 12 is electrical communication holes, the 15th, and heating column, 16,17 is respectively bonding wire electrode and scolder (tin) electrode, the 18th, thermal land.Be full of the metal paste of high-termal conductivity in the heating column, the coefficient of heat conduction of slurry is not less than 150W/mK, with ceramic wafer not the thermal land between the coplanar couple together, general slurry be that silver is starched; Heating column is a circular hole, diameter at 0.1mm between the 0.3mm.During encapsulation, led chip is positioned on the thermal land on one side, forms good thermo-contact, and the thermal land of another side is then with scolder and heat abstractor welding.In thermoelectric separate design, what wherein play the thermolysis maximum is the silver-colored post of middle conducting, the heat of led chip generation is passed to the heat abstractor of outside by the silver-colored post of conducting; And middle silver-colored post quantity is many more, and area is big more, and corresponding heat-conducting effect can be better.
For the ease of the encapsulation of led chip 2, the upper surface of ltcc substrate has pit, and led chip is positioned over wherein; This pit can be cylindricality, bowl-type or cup-shaped, and the shape of pit and size are determined as required, and pit surface is a high reflection layer; The pit bottom plane has thermal land, and both sides have the bonding wire electrode; Led chip is fixed on the thermal land.The quantity of led chip can be one or more, and is not subjected to the restriction of luminous wavelength.Encapsulating structure of the present invention is applicable to the encapsulation of multicore sheet, can be used for the LED encapsulation of three primary colors or more colors.
After the fixing and bonding wire of led chip is finished, inject with suitable glue in the pit of ltcc substrate, realization is to the embedding of LED core.
The present invention also optionally at the pit upper fixed optical lens of ltcc substrate, distributes so that the light that led light source sends forms suitable light.Available inlaying or bonding method fixed lens.
Because LTCC is a multilayer interconnection and easily highly integrated, have the flexibility of design, can utilize ltcc substrate to realize monochromatic or multi-colored led assembled package, array package easily, form integrated LED light source.The circuit that only needs the design ltcc substrate, and encapsulating structure and technology are constant substantially, still simplify very much.If will make integrated optical source with the LED of traditional encapsulating structure, then pcb board must be designed in addition, above more packaged LED being installed to, outside structure, the complex process, also reduced reliability, in addition heat dispersion with carry out assembled package with ltcc substrate and cannot be mentioned in the same breath.
The preparation method of high-brightness LED light source of the present invention comprises step:
1. the ltcc substrate for preparing thermoelectric separate design forms corresponding circuit and electrode according to the encapsulation needs, and special-purpose heating column and thermal land is arranged on multi-layer ceramic chip; Upper surface of base plate has pit, and the shape of this pit and size determine that as required the big I on pit bottom plane is held led chip; The pit bottom plane has thermal land, and both sides have the bonding wire electrode; Ltcc substrate processing and coating printing technology are prior arts, and be irrelevant with the application's inventive point, need not to give unnecessary details.
2. led chip is fixed on the thermal land in the pit bottom plane of upper surface of base plate.
3. with the electrode of spun gold welding led chip and the electrode on the substrate.
4. inject in the pit of ceramic substrate with suitable glue, realize embedding the LED core.
Optional pit upper fixed optical lens at ltcc substrate.
The ceramic substrate coefficient of heat conduction is higher, helps the heat radiation of led chip.The shape of substrate does not have strict restriction yet, in order to be beneficial to processing and packaging technology, preferred rectangle.The number of plies of ltcc substrate is decided according to the design needs.Circuit on the substrate generally forms with the printing of silver slurry; The thickness of silver layer, shape and position can be according to using the needs design, and the number of electrodes on the substrate is decided according to the quantity of using led chip without limits.Can pass through the bonding way fixed chip, preferably use high thermal conductivity gluing connect fixing; Also can effectively reduce the thermal resistance of structure by the mode of eutectic weldering.As required, chip can be one or more.Casting glue preferably uses the high glue of optical transmittance, can reduce light loss.The purpose of lens is that the light that improves led light source distributes, and satisfies specific optics needs, and lens useful binders or mode such as inlay are installed on the ceramic substrate.For the array package led light source, above-mentioned preparation method and technology are constant substantially, it is the quantity difference of led chip, and parameters such as the quantity of led chip, distribution form, emission wavelength, power, brightness are all unrestricted in the array, can decide according to the use needs, and design corresponding ltcc substrate.Be described in further detail the present invention with reference to the accompanying drawings in conjunction with the embodiments.
Description of drawings
Fig. 1 is the structural profile schematic diagram of low-temperature co-fired ceramic substrate among the present invention;
Fig. 2 is the front schematic view that adopts the ltcc substrate of heating column design among the present invention;
Fig. 3 is the generalized section that adopts the ltcc substrate of heating column design among the present invention;
Fig. 4 is the generalized section of single-chip package structure LED among the present invention;
Fig. 5 is the structural representation of single-chip package structure LED among the present invention;
Fig. 6 is the schematic diagram of a kind of multichip packaging structure LED among the present invention;
Fig. 7 is the schematic diagram of a kind of array encapsulation structure LED among the present invention.
Embodiment
One one kinds of encapsulating structures that use the single-chip led light source of ltcc substrate of embodiment
See also Fig. 4, Fig. 5, ltcc substrate 1 is a rectangle, and adopts the thermoelectric isolating construction shown in Fig. 2,3.
Be full of the silver slurry in the heating column, the heat that led chip produces passed to the LED back side by silver-colored post.
It has a cylindrical pit that is used to place led chip 2 in center of ceramic wafer at the middle and upper levels.
Ltcc substrate has been made corresponding circuit and electrode according to the encapsulation needs, and there are 2 electrodes at the back side, is used for the power supply of LED.
The glue of led chip 2 usefulness high thermal conductivities directly is fixed on the thermal land in the substrate pit bottom plane, and the heat that makes chip produce can spread out of rapidly by ltcc substrate; The power of led chip is 1W.
Electrode on the electrode of led chip 2 and the ltcc substrate 1 is by spun gold 3 welding.
After the fixing and bonding wire of led chip was finished, the casting glue 4 high with optical transmittance injected in the pit of ltcc substrates, and makes its curing.
The embodiment two another kind of encapsulating structures that use the single-chip led light source of ltcc substrate
Substantially according to the step identical with embodiment one, different is is mixed with a certain proportion of YAG powder in the casting glue 4, and the chip of the light by sending specific wavelength excites the YAG powder, to obtain the light of required color.And bonding lens 5 above the pit of ltcc substrate, the material of lens is optical plastic PMMA (acryl), the injection moulding manufacturing.
31 kinds of encapsulating structures that use the multi-chip LED light source of ltcc substrate of embodiment
Substantially according to the step identical with embodiment one, different is to have adopted the encapsulation of RGB three primary colors, sees also Fig. 6, promptly use three LEDs chips, color is respectively a red, green, blue, and the operating current of three LEDs chips is 20mA, is fixed on together on the plane of the same pit bottom of ltcc substrate; Ltcc substrate has been made corresponding circuit and electrode according to the encapsulation needs, and three LEDs chips can independently-poweredly be controlled, and there are six electrodes at the ltcc substrate back side, and per two electrodes are independently controlled a chip.
41 kinds of led light sources that use the array encapsulation structure of ltcc substrate of embodiment
See also Fig. 7, ltcc substrate 1 is a rectangle, adopts thermoelectric isolating construction.
Be full of the silver slurry in the heating column, the heat that led chip produces passed to the LED back side by silver-colored post.
According to the needs of this combined light source, its at the middle and upper levels ceramic wafer be provided with one group of cylindrical pit that is used to place led chip 2.
On the thermal land on substrate in each pit, all fixed a led chip 2 with the glue of high thermal conductivity, the heat that makes chip produce can spread out of rapidly by ltcc substrate; The power of each led chip is 1W.
The electrode of each led chip and the electrode on the ltcc substrate are by spun gold 3 welding.
After the fixing and bonding wire of led chip was finished, the casting glue 4 high with optical transmittance injected in the pit of ltcc substrates, and makes its curing.
Be mixed with a certain proportion of YAG powder in the casting glue 4, the chip of the light by sending specific wavelength excites the YAG powder, to obtain the light of required color.
The number of plies of ltcc substrate is determined according to the needs of circuit, has made corresponding circuit and electrode according to the encapsulation needs, and substrate back has electrode, is used for the power supply and the control of this LED combined light source.
In the present embodiment, led array is 4 * 6, rectangular arranged.As required, circular arrangement, the rhombus that also can be designed to varying number are staggered etc., and be unrestricted.
The embodiment five another kind of led light sources that use the array encapsulation structure of ltcc substrate
Substantially according to the step identical with embodiment four, different is to have adopted the encapsulation of RGB three primary colors, promptly in the pit of each on substrate, three LEDs chips is arranged all, and color is respectively a red, green, blue, and the operating current of three LEDs chips is 20mA; The number of plies of ltcc substrate is determined according to the needs of circuit, has made corresponding circuit and electrode according to the encapsulation needs, and the three-color LED chip in the array can independently-poweredly be controlled.Substrate back has electrode, is used for the power supply and the control of this LED combined light source.
Good heat conductivity, thermal coefficient of expansion, the cost characteristics low and that fabrication cycle is short of LTCC make it become the ideal material of photoelectron encapsulation.The thermal conductivity of ceramic interconnect material is all very high, and thermal conductivity is high more, can simplify thermal design more, obviously improve the life-span and the reliability of circuit, and the special-purpose heating column in the thermoelectric isolating construction can strengthen heat conductivity significantly.By LTCC and thermoelectric isolation technics, the function of optics, electricity and calorifics is integrated, not only strengthen product performance but also reduce size.
From the above, the invention provides a kind of led light source encapsulating structure that uses the LTCC of thermoelectric separate design.Advantage with simple in structure, high luminous flux, high reliability and low thermal resistance.And provide a kind of method of utilizing this encapsulating structure to prepare the high-brightness LED light source.Obviously, those skilled in the art can do many improvement and conversion, and for example variation of Feng Zhuan structure and size and material etc. all falls into spiritual scope of the present invention.
Claims (11)
1. a led light source encapsulating structure that uses the LTCC of thermoelectric separate design mainly comprises low-temperature co-fired ceramic substrate and the led chip that is fixed on the substrate, and the upper surface of substrate has the pit of placing led chip; It is characterized in that low-temperature co-fired ceramic substrate is a tabular, conductive path and thermal conducting path are independent mutually.
2. according to the described encapsulating structure of claim 1, it is characterized in that the material of substrate is formed by the ceramic material of the coefficient of heat conduction greater than 3.0W/mK.
3. according to the described encapsulating structure of claim 1, it is characterized in that the thermal coefficient of expansion of whole base plate is not more than 7 * 10
-6/ ℃.
4. according to the described encapsulating structure of claim 1, it is characterized in that substrate carries out thermoelectric separate design, adopt special-purpose heating column and thermal land, be full of the metal paste of high-termal conductivity in the heating column, the coefficient of heat conduction of slurry is not less than 150W/mK, with ceramic wafer not the thermal land between the coplanar couple together; Heating column is a circular hole, and between the 0.3mm, during encapsulation, led chip is positioned on the thermal land on one side diameter, forms good thermo-contact at 0.1mm, and the thermal land of another side is then with scolder and heat abstractor welding; Substrate also has the electrode of composition electric pathway and the intercommunicating pore of connection electrode simultaneously.
5. according to the described encapsulating structure of claim 4, it is characterized in that the ectonexine electrode of low-temperature co-fired ceramic substrate uses silver, gold, copper or nickel.
6. according to the described encapsulating structure of claim 1, it is characterized in that described pit can be cylindricality, bowl-type or cup-shaped, and pit surface is a high reflection layer.
7. according to the described encapsulating structure of claim 1, the quantity that it is characterized in that led chip is one or more.
8. according to the described encapsulating structure of claim 1, it is characterized in that at pit upper fixed optical lens.
9. according to the described encapsulating structure of claim 1, it is characterized in that carrying out monochromatic or multi-colored led assembled package, array package, form integrated LED light source, preparation method and technology are constant substantially, be the quantity difference of led chip, and parameters such as the quantity of led chip, distribution form, emission wavelength, power, brightness are all unrestricted in the array.
10. method for preparing the high-brightness LED light source comprises step:
Prepare the ltcc substrate of thermoelectric separate design, upper surface of base plate has pit, and the pit bottom plane has thermal land, and both sides have the bonding wire electrode;
Led chip is fixed on the thermal land in the pit bottom plane of upper surface of base plate;
With the electrode of spun gold welding led chip and the electrode on the substrate;
Inject with suitable glue in the pit of ceramic substrate, realize embedding led chip.
11., further be included in the pit upper fixed optical lens of ltcc substrate according to the method for claim 10.
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