WO2006132794A2 - A light-emitting device module with flip-chip configuration on a heat-dissipating substrate - Google Patents

A light-emitting device module with flip-chip configuration on a heat-dissipating substrate Download PDF

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Publication number
WO2006132794A2
WO2006132794A2 PCT/US2006/019826 US2006019826W WO2006132794A2 WO 2006132794 A2 WO2006132794 A2 WO 2006132794A2 US 2006019826 W US2006019826 W US 2006019826W WO 2006132794 A2 WO2006132794 A2 WO 2006132794A2
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WO
WIPO (PCT)
Prior art keywords
light
emitting device
device module
substrate
module according
Prior art date
Application number
PCT/US2006/019826
Other languages
French (fr)
Other versions
WO2006132794A3 (en
Inventor
Shen-Nan Tong
Original Assignee
Intex Recreation Corp.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN200520083960.5 external-priority
Application filed by Intex Recreation Corp. filed Critical Intex Recreation Corp.
Publication of WO2006132794A2 publication Critical patent/WO2006132794A2/en
Publication of WO2006132794A3 publication Critical patent/WO2006132794A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
    • G02B6/4228—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements
    • G02B6/4232—Passive alignment, i.e. without a detection of the degree of coupling or the position of the elements using the surface tension of fluid solder to align the elements, e.g. solder bump techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape

Abstract

A light-emitting device module comprising a substrate, having a top metal surface and a bottom metal surface, a light-emitting device chip, a heat-dissipating unit, wherein the light-emitting device chip is flip-chip bonded onto the substrate through bonding bumps which serve as electrical and thermal conductors, the substrate has through-holes in its thickness, each through-hole being underneath a bonding bump and each hole being plated with metal on its inner wall or filled with a thermal-conductive medium, the heat-dissipating unit is joined onto the bottom metal surface of the substrate and the substrate has a cavity formed on the top surface to accommodate the light-emitting device chip and is filled with an encapsulating material for encapsulating the light-emitting device chip.

Description

A Light-Emitting Device Module with Flip-Chip Configuration on a
Heat-Dissipating Substrate
Field of Invention
The present invention relates to a light-emitting device module, more
particularly, to a light-emitting device module having a flip-chip configuration on a
heat-dissipating substrate.
Technical Background
Much research effort has been devoted to the enhancement of the luminous
efficacy and the thermal management of light-emitting devices, as these devices are
gaining increasing interest in lighting and illumination applications. The
conventional method of dissipating heat generated by a light-emitting device has
been using a substrate joined to the device chip to conduct heat away from the device
chip. As the input current of the light-emitting device increases, an excessive
quantity of heat is generated within the device. The conventional heat-dissipating
method is found to be no longer adequate to manage such a thermal problem.
Without a more effective method to dissipate this excessive heat, the luminous
efficacy and the reliability of the light-emitting device is severely affected.
The conventional technique of packaging a light-emitting diode chip, is to
bond the diode chip onto a reflector of a lead frame. The electrodes deposited on the
top surface of the diode chip are then wired-bonded to the frame. Since the
electrodes are opaque to the light, a high percentage of light, emitting from the light- emitting layer of the chip, is either absorbed or reflected back into the chip by the
electrodes. In addition, due to the poor thermal conductivity of the substrates used in
making a light emitting diode, such as sapphire or gallium arsinide, the heat
produced by the chip is easily accumulated. To remedy these problems, Applicant's
invention comprises a flip-chip substrate for directly flip-bonding of the light
emitting device chip.
Summary of the Invention
It is, therefore, the object of the present invention to provide a light-emitting
device module having a flip chip configuration. The device chip is flip-bonded onto
a substrate, which is joined with a heat-dissipating unit, thereby effectively removing
the heat from the chip and improving the light output.
The present invention consists of a flip-chip substrate, a light-emitting device
chip and a heat-dissipating unit. The device chip is placed inside a dam-shaped
cavity and is flip-bonded onto a substrate. Both the anode and cathode of the device
chip are bonded separately onto the corresponding electrodes on the substrate surface
with bonding bumps. To facilitate the heat dissipation of the device chip, several
metal bumps are placed in between and in contact with the device chip and the
substrate to serve as thermal conductors. Underneath each bump a through-hole in
the substrate is formed and is filled with a thermal-conductive medium or plated with
metal. The bottom opening of each through-hole is in contact with the bottom
surface of the substrate, on which a heat-dissipating unit is joined. To encapsulate the device chip, the cavity is filled with an encapsulating material such as epoxy or
silicone,
The bumps situated between, and in contact with the device chip and the
substrate, serve to conduct heat away from the device chip into the substrate. These
bumps can be in the form of a column, sphere or other forms of configuration.
Depending on the desired brightness, varying numbers of the device chips can
be placed inside the cavity either in linear, matrix array or other forms of
arrangement. It is also possible to form multiple numbers of cavities on the substrate
surface either in linear, matrix array or other forms of arrangement.
The device chip can be of emitting red, yellow, blue, white or light with a
different color.
The abovementioned heat-dissipating unit can either be a passive unit such as
plates with various configurations or an active unit such as a heat pipe or fan.
The advantages of the present invention can be realized in terms of the overall
performance of the device module. By utilizing the flip chip configuration to form
effective thermal conduction between the device chip and the heat-dissipating unit,
the thermal management of the device module is greatly improved. In addition, the
lights emitting upward from the light-emitting layer in the diode chip can easily
escape out of the chip without encountering the electrodes. Thus, the brightness of
the device module is also significantly enhanced. Brief Description of the Drawings
These and other features and advantages of the present invention, will
be better understood by reference to the following detailed description when
considered in connection with the accompanying drawings, wherein:
FIG 1 is a schematic, transverse, cross-section view of a light-emitting device
module having metal bumps in column form, employing the principles of present
invention.
FIG 2 is a schematic, transverse, cross-section view of a light-emitting device
module having metal bumps in sphere form, employing the principles of present
invention.
FIG 3 illustrates in schematic plane and transverse cross-section a light-
emitting device module having the device chips and cavities arranged in matrix array
form, employing the principles of present invention.
FIGs 4 and 5 illustrate, in schematic plane and transverse cross-section, a
light-emitting device module having various forms of configuration, employing the
principles of present invention.
Referring to FIG 1 to FIG 5, 1 refers to the substrate, l(A) refers to the
insulator layer, l(B) refers to the metal layer, and 2 refers to the light-emitting diode
device chip. 3 refers to the heat-dissipating unit, 4 refers to the electrical conducting
metal layer, and 5 refers to a dam-shaped cavity. 6 refers to the column bumps, 7
refers to the sphere bumps, 8 refers to the through-holes in the substrate, and 9 refers to the encapsulating material, such as epoxy or silicone. 10 refers to the anode and
11 refers to the cathode electrodes of the light-emitting device.
Description of the Preferred Embodiment
In the first embodiment of the present invention as shown in FIG 1, the
substrate 1 comprises the top metal layer 4, the insulator layer l(A) and bottom
metal layer l(B). The device chip 2 is flip-bonded, top-down, onto substrate 1 with
the anode 10 and cathode 11 contacting the electrical, top metal layer 4. Several
metal column bumps 6 are placed in between the device chip 2 and the substrate 1,
and in contact with the device chip 2 and through-holes 8 in substrate 1.
Underneath each bump there is a through-hole 8, passing through insulator
layer 1 (A), in substrate 1. Each through-hole 8 is filled with a thermal-conductive
medium such as silver paste or copper paste or is plated with a metal such as copper
or silver on its inner wall. The top opening of each through-hole 8 is in contact with
a bump 6, while its bottom opening is in contact with bottom metal layer l(B) of
substrate 1.
A heat-dissipating unit or heatsink 3 is joined onto the bottom metal layer
l(B). To accommodate the device chip 2, a dam-shaped cavity 5 is formed on the
substrate 1 and is filled with an encapsulating material, such as epoxy or silicone, to
encapsulate device chip 2.
In the second embodiment of the present invention as shown in FIG 2, several
metal sphere bumps 7 are placed in between the device chip 2 and the substrate 1 and in contact with the device chip 2 and the substrate 1. Underneath each bump 7 a
through-hole 8 in the substrate 1 is formed and is filled with a thermal-conductive
medium or is plated with metal on its inner wall. The top opening of the through-
hole 8 is in contact with bump 7, while its bottom opening is in contact with bottom
110 metal layer l(B) of substrate 1.
A heat-dissipating unit or heatsink 3 is joined onto the bottom metal layer
l(B). To accommodate the device chip 2, a dam-shaped cavity 5 is formed on the
substrate 1 and is filled with an encapsulating material, such as epoxy or silicone, to
encapsulate device chip 2.
115 Depending on the desired brightness, varying numbers of device chips 2 can
be placed inside cavity 5, either in linear, matrix array as shown in FIG 3 or other
forms of arrangement as depicted in FIGs 4 and 5. It is also possible to form
multiple numbers of cavities 5 on the substrate surface either in linear, matrix array
or other forms of arrangement.
120 The abovementioned device chip 2 can be of emitting red, yellow, blue, white
or combination of multi-colors.
The abovementioned heat-dissipating unit 3 can either be a passive unit such
as a single metal plate, a plurality of metal plates or other configurations or an active
unit such as a heat pipe or fan.
125 The conducting metal layer 4 in the substrate 1 upon which the electrodes of
the device chip are bonded, extends into the outer surface of substrate 1, thereby facilitating the electrical connection of the device module to any other device or
component.
Substrate 1 can be a laminated structure with a single metal core and
130 insulating layers, thereby dissipating the heat more effectively than a laminated
structure having multi-metal layers. The insulator layer in the substrate can be made
of ceramic or high polymer materials.
FIG. 3 is a diagrammatic, top view and cross-sectional, side
view of the light-emitting device module showing a matrix array arrangement, using
135 multiple light-emitting device modules. Each of the units is identical and comprises
four light emitting device chips 2, which may be of different colors, such as red,
green and blue. The device chips 2 are flip-bonded, top down, in a cavity 5 in
substrate 1. The cross-section view shows the insulation layer IA, the metal layer
IB and the heat dissipation unit 3.
140 FIGs 4 and 5 are diagrammatic, top and cross-sectional side views of various
configurations using multiple light-emitting device modules showing the same
components as set forth in FIG 3.
Having thus described the invention, I Claim:
145

Claims

145 Claim 1. A light-emitting device module comprising:
a substrate, having a top metal surface and a bottom metal surface;
a light-emitting device chip;
a heat-dissipating unit;
wherein said light-emitting device chip is flip-chip bonded onto the
150 substrate through bonding bumps which serve as electrical and thermal
conductors;
wherein said substrate has through-holes in its thickness;
each hole being underneath a bonding bump;
each hole being plated with metal on its inner wall or filled with a
155 thermal-conductive medium;
wherein said heat-dissipating unit is joined onto the bottom metal
surface of the substrate;
wherein said substrate has a cavity formed on the top surface to
accommodate the light-emitting device chip and is filled with an
160 encapsulating material for encapsulating the light-emitting device chip.
Claim 2. The light-emitting device module according to claim 1, wherein said
bonding bumps are in the form of a sphere, column or other
configuration.
165
Claim 3. The light-emitting device module according to claim I5 comprising a
plurality of light-emitting diode chips arranged in linear, matrix or other
arrangements.
170
Claim 4. The light-emitting device module according to claim 1, comprising a
plurality of cavities arranged in linear, matrix or other arrangements.
Claim 5. The light-emitting device module according to claim 1. wherein said
light-emitting device chip is of emitting red, yellow, blue, green, white
175 or light of a different color.
Claim 6. The light-emitting device module according to claim 1 , wherein said
heat-dissipating unit is passive or active.
180 Claim 7. The light-emitting device module according to claim 6 wherein said
heat-dissipating unit is a single plate or a plurality of plates.
Claim 8. The light-emitting device module according to claim 6 wherein said
heat-dissipating unit is a heat pipe or fan.
185
Claim 9. The light-emitting device module of claim 1 wherein the encapsulating
material iø epoxy or silicone,
190
Claim 10. The light-emitting device module of claim 1 wherein the through-holes
are filled with silver paste or copper paste.
Claim 11. The light-emitting device module of claim 1 wherein the through-holes
are plated with silver or copper.
195
Claim 12. The light-emitting device module according to claim 1 wherein said
light-emitting device chip is placed inside a dam-shaped cavity.
Claim 13. The light-emitting device module according to claim 1 wherein said
200 light-emitting device chip is bonded onto the top metal layer of the
substrate.
Claim 14. A light-emitting device module comprising:
a substrate, having an insulator layer between a top metal layer and a
205 bottom metal layer;
a light-emitting device chip having an anode and a cathode;
a heatsink adjacent to or joined onto the bottom metal layer of the substrate;
a dam-shaped cavity on the top of the substrate;
210 wherein the light-emitting device chip is placed in the dam-shaped
cavity and flip-chip bonded onto the substrate, through bonding bumps
which serve as electrical and thermal conductors;
wherein the substrate has through-holes through its insulator layer;
each through-hole being underneath, and in contact with, a bonding
215 bump and also in contact with the bottom metal layer of the substrate;
each through-hole being plated with metal on its inner wall or rilled
with a thermal-conductive medium;
wherein the anode and cathode are in electrical contact with the
substrate top metal layer;
220 wherein the dam-shaped cavity is filled with an encapsulating material
for encapsulating the light-emitting device chip.
Claim 15. The light-emitting device module according to claim 14, wherein said
bonding bumps are in the form of a sphere, column or other
225 configuration.
Claim 16. The light-emitting device module according to claim 14, comprising a
230 plurality of light-emitting diode chips arranged in linear, matrix or other
arrangements.
Claim 17. The light-emitting device module according to claim 14, comprising a
plurality of cavities arranged in linear, matrix or other arrangements.
235
Claim 18. The light-emitting device module according to claim 14, wherein said
light-emitting device chip is of emitting red, yellow, blue, green, white
or light of a different color.
240 .
Claim 19. The light-emitting device module according to claim 14, wherein said
heatsink is passive or active.
Claim 20. The light-emitting device module according to claim 19 wherein said
heatsink is a single plate or a plurality of plates.
245
Claim 21 , The light-emitting device module according to claim 19 wherein said
heatsink is a heat pipe or fan.
250 Claim 22. The light-emitting device module of claim 14 wherein the encapsulating
material is epoxy or silicone,
Claim 23. The light-emitting device module of claim 14 wherein the through-holes
are filled with silver paste or copper paste.
255
Claim 24. The light-emitting device module of claim 14 wherein the through-holes
are plated with silver or copper.
PCT/US2006/019826 2005-06-03 2006-05-22 A light-emitting device module with flip-chip configuration on a heat-dissipating substrate WO2006132794A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CNU2005200839605U CN2814676Y (en) 2005-06-03 2005-06-03 Light-emitting diode packaging structure with groove substrate
CN200520083960.5 2005-06-03

Publications (2)

Publication Number Publication Date
WO2006132794A2 true WO2006132794A2 (en) 2006-12-14
WO2006132794A3 WO2006132794A3 (en) 2007-04-19

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WO (1) WO2006132794A2 (en)

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EP2413392A2 (en) * 2009-03-24 2012-02-01 Kang Kim Light-emitting diode package
WO2012044011A2 (en) * 2010-09-30 2012-04-05 Seoul Opto Device Co., Ltd. Wafer level light emitting diode package and method of fabricating the same
CN102447018A (en) * 2010-10-12 2012-05-09 柏腾科技股份有限公司 Improved combination structure and combining method of baseplate and heat dissipating structure
CN104124216A (en) * 2014-07-03 2014-10-29 天水华天科技股份有限公司 Substrate chip carrier CSP package and production method thereof

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CN101958390A (en) * 2010-08-13 2011-01-26 李刚 Light-emitting chip packaging structure
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CN102376699A (en) * 2011-06-17 2012-03-14 杭州华普永明光电股份有限公司 LED (Light Emitting Diode) module based on ceramic-based PCB (Printed Circuit Board) and manufacturing process thereof
CN102364684B (en) * 2011-06-17 2017-02-08 杭州华普永明光电股份有限公司 LED (Light-Emitting Diode) module and manufacturing process thereof
CN110391350B (en) * 2019-07-29 2022-08-05 云谷（固安）科技有限公司 Display panel and display device

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2413392A2 (en) * 2009-03-24 2012-02-01 Kang Kim Light-emitting diode package
EP2413392A4 (en) * 2009-03-24 2013-12-18 Kang Kim Light-emitting diode package
WO2012044011A2 (en) * 2010-09-30 2012-04-05 Seoul Opto Device Co., Ltd. Wafer level light emitting diode package and method of fabricating the same
WO2012044011A3 (en) * 2010-09-30 2012-06-07 Seoul Opto Device Co., Ltd. Wafer level light emitting diode package and method of fabricating the same
CN102447018A (en) * 2010-10-12 2012-05-09 柏腾科技股份有限公司 Improved combination structure and combining method of baseplate and heat dissipating structure
CN104124216A (en) * 2014-07-03 2014-10-29 天水华天科技股份有限公司 Substrate chip carrier CSP package and production method thereof

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