CN108767102A - A kind of light-emitting diode chip for backlight unit and preparation method thereof - Google Patents
A kind of light-emitting diode chip for backlight unit and preparation method thereof Download PDFInfo
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- CN108767102A CN108767102A CN201810252979.XA CN201810252979A CN108767102A CN 108767102 A CN108767102 A CN 108767102A CN 201810252979 A CN201810252979 A CN 201810252979A CN 108767102 A CN108767102 A CN 108767102A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
Abstract
The invention discloses a kind of light-emitting diode chip for backlight unit and preparation method thereof, belong to technical field of semiconductors.Preparation method includes：One LED core grains are provided, LED core grains include substrate, buffer layer, n type semiconductor layer, multiple quantum well layer, p type semiconductor layer, P-type electrode, N-type electrode and reflecting layer, buffer layer, n type semiconductor layer, multiple quantum well layer and p type semiconductor layer are sequentially laminated on the first surface of substrate, p type semiconductor layer is equipped with the groove for extending to n type semiconductor layer, N-type electrode is arranged on the n type semiconductor layer in groove, P-type electrode is arranged on p type semiconductor layer, and reflecting layer is arranged on the second surface of substrate；Heat dissipating layer is formed on reflecting layer using pulsed laser deposition technique, the component of heat dissipating layer includes carbon simple substance, and the atom number of carbon simple substance accounts for 90% or more of the atom number of heat dissipating layer；Heat dissipating layer is fixed on cooling base by colloid.The present invention can promote the heat-sinking capability of chip.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of light-emitting diode chip for backlight unit and preparation method thereof.
Background technology
Light emitting diode (English：Light Emitting Diode, referred to as：LED it is) electroluminescent using the PN junction of semiconductor
A kind of light emitting semiconductor device made of principle of luminosity.Epitaxial wafer is the primary finished product in light emitting diode preparation process, is shone
Diode core particles include epitaxial wafer and the electrode that is made in extension on piece, and light-emitting diode chip for backlight unit includes LED core grains
And cooling base.
Gallium nitride LED chip is received more and more attention and is studied at present, and preparation process includes：?
Buffer layer, N-type layer, multiple quantum well layer and P-type layer are stacked gradually on substrate, forms epitaxial wafer, and wherein multiple quantum well layer is by measuring
The multilayered structure that sub- barrier layer and quantum well layer alternating growth are formed；Electrode is made in P-type layer and N-type layer respectively, is shone
Diode core particles；LED core grains and cooling base are combined, light-emitting diode chip for backlight unit is constituted.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems：
It shines if directly LED core grains and cooling base combine to constitute by connecting materials such as colloids
Diode chip for backlight unit can cause certain congestion since the heat dissipation performance of connecting material is limited to the conduction of heat.
If first LED core grains are bonded with single crystal diamond stone, then by connecting materials such as colloids that monocrystalline is golden
Hard rock block combines with cooling base and constitutes light-emitting diode chip for backlight unit, since the heat dissipation performance of single-crystal diamond is far superior to glue
The connecting materials such as body, therefore single-crystal diamond will not cause congestion to the conduction of heat.But by LED core grains and list
In the bonding process of diamond block, need to handle the surface of LED core grains using argon (Ar) ion beam, this
A processing can damage the surface of LED core grains, influence bonding situation, introduce high thermal resistance, conduction final or to heat
Cause certain congestion.
And light-emitting diode chip for backlight unit will produce heat under certain operating current, the electric current applied with light-emitting diode chip for backlight unit
Increasing, the heat that LED core grains generate is more and more, and a large amount of heat can not be conducted by cooling base,
It is accumulated in inside LED core grains, efficiency, brightness and the luminous efficiency of light-emitting diode chip for backlight unit can be reduced.
Invention content
In order to solve problems in the prior art, an embodiment of the present invention provides a kind of light-emitting diode chip for backlight unit and its preparation sides
Method.The technical solution is as follows：
On the one hand, an embodiment of the present invention provides a kind of preparation method of light-emitting diode chip for backlight unit, the preparation method packets
It includes：
There is provided a LED core grains, the LED core grains include substrate, buffer layer, n type semiconductor layer, more
Quantum well layer, p type semiconductor layer, P-type electrode, N-type electrode and reflecting layer, it is the buffer layer, the n type semiconductor layer, described
Multiple quantum well layer and the p type semiconductor layer stack gradually on the first surface of the substrate, are set on the p type semiconductor layer
There is the groove for extending to the n type semiconductor layer, the N-type electrode is arranged on the n type semiconductor layer in the groove, described
P-type electrode is arranged on the p type semiconductor layer, and the reflecting layer is arranged on the second surface of the substrate, and described second
Surface is the surface opposite with the first surface；
Heat dissipating layer is formed on the reflecting layer using pulsed laser deposition technique, the component of the heat dissipating layer includes
Carbon simple substance, the atom number of the carbon simple substance account for 90% or more of the atom number of the heat dissipating layer；
The heat dissipating layer is fixed on cooling base by colloid.
Optionally, described that heat dissipating layer is formed on the reflecting layer using pulsed laser deposition technique, including：
One vacuum chamber for being equipped with graphite target is provided；
The LED core grains are put into the vacuum chamber, the vacuum chamber is vacuumized；
Be passed through hydrogen into the vacuum chamber, the control indoor temperature of vacuum is 200 DEG C~600 DEG C, pressure be 10Pa~
150Pa；
The graphite target is sputtered using laser, heat dissipating layer is formed on the reflecting layer.
Preferably, mixed with elementary silicon in the graphite target, the atom number of the elementary silicon accounts for the atom of the graphite target
The 5%~10% of number.
Preferably, the preparation method further includes：
When being passed through hydrogen into the vacuum chamber, it is passed through into the vacuum chamber with the flow of 10sccm~200sccm
Gas containing element silicon.
Optionally, the distance between the LED core grains and the graphite target are 4.5cm~6.5cm.
Optionally, the when a length of 10min~60min graphite target sputtered using laser.
On the other hand, an embodiment of the present invention provides a kind of light-emitting diode chip for backlight unit, the light-emitting diode chip for backlight unit includes
LED core grains and cooling base, the LED core grains include substrate, buffer layer, n type semiconductor layer, Multiple-quantum
Well layer, p type semiconductor layer, P-type electrode, N-type electrode and reflecting layer；The buffer layer, the n type semiconductor layer, the volume
Sub- well layer and the p type semiconductor layer stack gradually on the first surface of the substrate, and the p type semiconductor layer, which is equipped with, to be prolonged
The groove of the n type semiconductor layer is extended to, the N-type electrode is arranged on the n type semiconductor layer in the groove, the p-type
Electrode is arranged on the p type semiconductor layer, and the reflecting layer is arranged on the second surface of the substrate, the second surface
For the surface opposite with the first surface；
The light-emitting diode chip for backlight unit further includes heat dissipating layer, and the heat dissipating layer is laid on the reflecting layer, and passes through glue
Body is fixed on the cooling base；The component of the heat dissipating layer includes carbon simple substance, and the atom number of the carbon simple substance accounts for
90% or more of the atom number of the heat dissipating layer.
Optionally, the carbon simple substance in the heat dissipating layer includes diamond and graphite, and the atom number of the diamond is institute
State the 40%~70% of the atom number of carbon simple substance.
Preferably, the component of the heat dissipating layer further includes elementary silicon, and the atom number of the elementary silicon accounts for described dissipate
The 5%~10% of the atom number of thermosphere.
Optionally, the thickness of the heat dissipating layer is 50 μm~500 μm.
The advantageous effect that technical solution provided in an embodiment of the present invention is brought is：
Heat dissipating layer is formed in LED core grains by elder generation, then heat dissipating layer is fixed on by cooling base by colloid
On, since in heat dissipating layer 90% or more atom is carbon simple substance, heat dissipation performance is far superior to the connecting materials such as colloid, will not be to heat
The conduction of amount causes congestion；It can be to hair when can also avoid single-crystal diamond and LED core grains being bonded together simultaneously
The surface of optical diode core particles causes to damage, and then introduces high thermal resistance, and certain congestion is caused to the conduction of heat.Therefore this hair
The bright heat-sinking capability for promoting light-emitting diode chip for backlight unit effective on the whole, can will generate in the light-emitting diode chip for backlight unit course of work
Heat conduct in time, so that substrate temperature is down to 400 DEG C hereinafter, reducing the efficiency introduced due to fuel factor under high current
Loss to improve efficiency, brightness and the luminous efficiency of light-emitting diode chip for backlight unit, and then promotes light-emitting diode chip for backlight unit in big electricity
The application power on device is flowed, is that light-emitting diode chip for backlight unit is created just in the application of the semiconductor applications such as integrated circuit, power device
Sharp condition.
Description of the drawings
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, other are can also be obtained according to these attached drawings
Attached drawing.
Fig. 1 is a kind of flow chart of the preparation method of light-emitting diode chip for backlight unit provided in an embodiment of the present invention；
Fig. 2 is a kind of structural schematic diagram of LED core grains provided in an embodiment of the present invention；
Fig. 3 is the structural schematic diagram in a kind of light-emitting diode chip for backlight unit forming process provided in an embodiment of the present invention；
Fig. 4 is a kind of structural schematic diagram of light-emitting diode chip for backlight unit provided in an embodiment of the present invention.
Specific implementation mode
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
An embodiment of the present invention provides a kind of preparation method of light-emitting diode chip for backlight unit, Fig. 1 provides for the embodiment of the present invention
Light-emitting diode chip for backlight unit preparation method flow chart, referring to Fig. 1, which includes：
Step 101：One LED core grains are provided.
In the present embodiment, LED core grains include substrate, buffer layer, n type semiconductor layer, multiple quantum well layer, p-type
Semiconductor layer, P-type electrode, N-type electrode and reflecting layer.Fig. 2 is the structure of LED core grains provided in an embodiment of the present invention
Schematic diagram, referring to Fig. 2, buffer layer 11, n type semiconductor layer 12, multiple quantum well layer 13 and p type semiconductor layer 14 are sequentially laminated on lining
On the first surface at bottom 10, p type semiconductor layer 14 is equipped with the groove for extending to n type semiconductor layer 12, and the setting of N-type electrode 15 exists
On n type semiconductor layer 12 in groove, P-type electrode 16 is arranged on p type semiconductor layer 14, and reflecting layer 17 is arranged in substrate 10
On second surface, second surface is the surface opposite with first surface.
Specifically, which may include：
The first step, using metallo-organic compound chemical gaseous phase deposition (English：Metal organic Chemical
Vapor Deposition, referred to as：MOCVD) technology on the first surface of substrate successively grown buffer layer, n type semiconductor layer,
Multiple quantum well layer and p type semiconductor layer；
Second step opens up the groove for extending to n type semiconductor layer on p type semiconductor layer；
Third walks, and N-type electrode is arranged on the n type semiconductor layer in groove, P-type electrode is arranged on p type semiconductor layer；
4th step, organic semiconductor device；
5th step forms reflecting layer in the second surface of substrate.
Optionally, before the first step, which can also include：
Substrate is cleaned.
Specifically, substrate is cleaned, may include：
Controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), substrate is annealed 8 minutes in hydrogen atmosphere, and
Carry out nitrogen treatment.
More specifically, the first step may include：
Controlled at 400 DEG C~600 DEG C (preferably 500 DEG C), pressure is that 400torr~600torr (is preferably
500torr), the grown buffer layer on the first surface of substrate；
Controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), pressure is that 400Torr~600Torr (is preferably
500torr), the duration is 5 minutes~10 minutes (preferably 8 minutes), and in-situ annealing processing is carried out to buffer layer；
Controlled at 1000 DEG C~1200 DEG C (preferably 1100 DEG C), pressure is that 100torr~500torr (is preferably
300torr), n type semiconductor layer is grown on the buffer layer；
Control pressure is 100torr~500torr (preferably 300torr), and multiple quantum wells is grown on n type semiconductor layer
Layer, multiple quantum well layer include that multiple Quantum Well of alternating growth and multiple quantum are built, and temperature control is 720 DEG C when grown quantum trap
~829 DEG C (preferably 770 DEG C), temperature control is 850 DEG C~959 DEG C (preferably 900 DEG C) when grown quantum is built；
Controlled at 850 DEG C~1080 DEG C (preferably 960 DEG C), pressure is that 100torr~300torr (is preferably
200torr), the growing P-type semiconductor layer on multiple quantum well layer.
In practical applications, electronic barrier layer, then growing P-type half on electronic barrier layer are first grown on multiple quantum well layer
Conductor layer.Specifically, when growing electronic barrier layer, temperature control is 850 DEG C~1080 DEG C (preferably 960 DEG C), pressure control
For 200torr~500torr (preferably 350torr).
It should be noted that the temperature and pressure of above-mentioned control is respectively the temperature and pressure in reaction chamber.When realization with
Trimethyl gallium or trimethyl second are as gallium source, and high pure nitrogen is as nitrogen source, and trimethyl indium is as indium source, and trimethyl aluminium is as aluminium
Source, N type dopant select silane, P-type dopant to select two luxuriant magnesium.
More specifically, second step may include：
Photoresist is formed on the region on p type semiconductor layer in addition to groove region using photoetching technique；
Using sense coupling (English：Inductive Coupled Plasma Etch, referred to as：ICP)
Equipment dry etching does not have the p type semiconductor layer and multiple quantum well layer that photoresist covers, and forms groove；
Remove photoresist.
In specific implementation, can it first be laid with photoresist in the whole surface of p type semiconductor layer, then pass through certain figure
Mask plate photoresist is exposed, finally by after exposure photoresist impregnate in developer solution, you can dissolve part light
Photoresist leaves the photoresist of required figure.
In practical applications, electricity can also be formed on p type semiconductor layer successively after second step, before third step
Flow barrier and transparency conducting layer are conducive to the extending transversely of electric current, improve the luminous efficiency of light emitting diode.
More specifically, third step may include：
Using removing N in region of the photoetching technique on p type semiconductor layer in addition to P-type electrode region and groove
Photoresist is formed on region except type electrode region；
It is laid with electrode material on photoresist and the p type semiconductor layer and n type semiconductor layer that are covered without photoresist；
The electrode material on photoresist and photoresist is removed, the electrode material on p type semiconductor layer forms P-type electrode, N-type
Electrode material on semiconductor layer forms N-type electrode.
More specifically, the 5th step may include：
Using physical vapour deposition (PVD) (English：Physical Vapor Deposition, referred to as：PVD) technology is in substrate
Reflecting layer is formed on second surface.
Step 102：Heat dissipating layer is formed on reflecting layer using pulsed laser deposition technique.
Fig. 3 is the structural schematic diagram in light-emitting diode chip for backlight unit forming process provided in an embodiment of the present invention.Wherein, 20 table
Show heat dissipating layer.Referring to Fig. 3, heat dissipating layer 20 is arranged on reflecting layer 17.
In the present embodiment, the component of heat dissipating layer includes carbon simple substance, and the atom number of carbon simple substance accounts for the original of heat dissipating layer
90% or more of sub- number.
Optionally, which may include：
One vacuum chamber for being equipped with graphite target is provided；
LED core grains are put into vacuum chamber, vacuum chamber is vacuumized；
Be passed through hydrogen into vacuum chamber, the control indoor temperature of vacuum is 200 DEG C~600 DEG C, pressure be 10Pa~
150Pa；
Graphite target is sputtered using laser, forms heat dissipating layer on reflecting layer.
Heat dissipating layer is formed by using aforesaid way, the carbon simple substance in heat dissipating layer includes diamond and graphite, diamond
Atom number is the 40%~70% of the atom number of carbon simple substance.It is most since the thermal conductivity of diamond is up to 2000W/mK
Good heat-conducting substance, heat-sinking capability are much better than graphite, thus by control the carrier gas being passed through and the indoor temperature of vacuum and
Pressure is conducive to form diamond in LED core grains after laser sputters graphite target, improves Buddha's warrior attendant in carbon simple substance
Ratio shared by stone, to improve the heat-sinking capability of heat dissipating layer, efficiency is lost caused by effectively reducing fuel factor.
Preferably, the distance between LED core grains and graphite target can be that 4.5cm~6.5cm (is preferably
5.5cm).It is experimentally confirmed that when the distance between LED core grains and graphite target are between 4.5cm~6.5cm, heat dissipating layer
Synthesis speed is more suitable, and the quality of obtained heat dissipating layer is preferable, and the atom number of wherein diamond is more.
In a kind of realization method of the present embodiment, it can be accounted for mixed with elementary silicon, the atom number of elementary silicon in graphite target
The 5%~10% of the atom number of graphite target.
The doped silicon directly in graphite target can improve Buddha's warrior attendant in carbon simple substance to make also to mix silicon in the heat dissipating layer to be formed
The atom number of stone, and realize simple and convenient.
In another realization method of the present embodiment, which can also include：
When being passed through hydrogen into vacuum chamber, it is passed through into vacuum chamber containing element silicon with the flow of 10sccm~200sccm
Gas.
By the way that the gas containing element silicon is added in carrier gas, it can also realize and mix silicon in heat dissipating layer, cooperatively form heat dissipating layer
When temperature, pressure, sputtering distance etc., the gas containing element silicon is passed through using the flow of 10sccm~200sccm, can be made
The atom number of elementary silicon accounts for the 5%~10% of the atom number of heat dissipating layer, effectively improves the atom of diamond in carbon simple substance
Number.
Preferably, it can be 10min~60min to use the duration that laser sputters graphite target, make the heat dissipation to be formed
The thickness of layer is in OK range.
In specific implementation, the Spitfire Pro XP of Spectra-Physics's production may be used in above-mentioned steps 102
Type Ti is realized, is used Sapphire femtosecond pulse lasers by lens focus ablation graphite target, is generated carbon plasma, carbon
Plasma directional expansion emits, and heat dissipating layer is formed on reflecting layer.Specifically, the centre wavelength of laser can be 800nm, arteries and veins
It can be 120fs to rush width, and frequency can be 1kHz, and the focal length of lens can be 0.5m, and laser is mapped to graphite target by lens
On incident angle can be 55 °, vacuum chamber can be diameter 450mm sphere.In addition, in the forming process of heat dissipating layer,
Graphite target can be moved as needed or carries the print platform of LED core grains, to form heat dissipating layer in homogeneous thickness.
Step 103：Heat dissipating layer is fixed on cooling base by colloid.
Fig. 4 is the structural schematic diagram of light-emitting diode chip for backlight unit provided in an embodiment of the present invention.Wherein, 30 heat dissipation base is indicated
Seat.Referring to Fig. 4, heat dissipating layer 20 is fixed on cooling base 30.
The embodiment of the present invention forms heat dissipating layer by elder generation in LED core grains, then is fixed heat dissipating layer by colloid
On cooling base, since in heat dissipating layer 90% or more atom is carbon simple substance, heat dissipation performance is far superior to the connection material such as colloid
Material, will not cause congestion to the conduction of heat；It can also avoid single-crystal diamond and LED core grains being bonded in simultaneously
The surface of LED core grains can be caused to damage when together, and then introduce high thermal resistance, the conduction of heat is caused certain
Congestion.Therefore the present invention effectively promotes the heat-sinking capability of light-emitting diode chip for backlight unit on the whole, can be by light-emitting diode chip for backlight unit
The heat generated in the course of work conducts in time, and substrate temperature is made to be down to 400 DEG C hereinafter, reducing under high current due to heat
The efficiency loss that effect introduces, to improve efficiency, brightness and the luminous efficiency of light-emitting diode chip for backlight unit, and then promotes luminous two
Application power of the pole pipe chip on high-current device is light-emitting diode chip for backlight unit in semiconductors such as integrated circuit, power devices
Convenience is created in field application.
An embodiment of the present invention provides a kind of light-emitting diode chip for backlight unit, may be used preparation method shown in FIG. 1 prepare and
At.Referring to Fig. 4, which includes LED core grains, heat dissipating layer 20 and cooling base 30, light emitting diode
Core particles include substrate 10, buffer layer 11, n type semiconductor layer 12, multiple quantum well layer 13, p type semiconductor layer 14, N-type electrode 15, P
Type electrode 16 and reflecting layer 17.
In the present embodiment, buffer layer 11, n type semiconductor layer 12, multiple quantum well layer 13 and p type semiconductor layer 14 layer successively
It is stacked on the first surface of substrate 10, p type semiconductor layer 14 is equipped with the groove for extending to n type semiconductor layer 12, N-type electrode 15
On the n type semiconductor layer 12 being arranged in groove, P-type electrode 16 is arranged on p type semiconductor layer 14, and the setting of reflecting layer 17 is serving as a contrast
On the second surface at bottom 10, second surface is the surface opposite with first surface.Heat dissipating layer 20 is laid on reflecting layer 17, and is led to
Colloid is crossed to be fixed on cooling base 30.The component of heat dissipating layer 20 includes carbon simple substance, and the atom number of carbon simple substance accounts for heat dissipation
90% or more of the atom number of layer.
Optionally, the carbon simple substance in heat dissipating layer may include diamond and graphite, and the atom number of diamond can be carbon
40%~70% (preferably 70%) of the atom number of simple substance.
In practical applications, the atom number of diamond is more, and heat conductivility is better, and Temperature Distribution is more uniform, therefore meeting
The atom number of diamond is improved as far as possible, but is limited to current technology and cost of implementation, the atom number of diamond
For carbon simple substance atom number 40%~70% when, the effect of uniformity of temperature profile is preferable, and cost of implementation is relatively low.
In specific implementation, heat dissipating layer can be diamond-film-like.Diamond-like (English：Diamond-like
Carbon, referred to as：DLC) film is the amorphous carbon-film containing diamond phase, and a carbon atom part therein is in the sp of diamond3
Hybrid state, another part are in the sp of graphite2Hybrid state, property is mainly by sp3Linkage content and distribution determine.Due to containing
There are a certain number of sp3Key, diamond-film-like have a series of properties similar to diamond, optics, heat with diamond
And mechanical property, for thermal conductivity up to 2000W/mK, heat-sinking capability is superpower；Simultaneously because containing a certain number of sp2Key, class
Diamond film has a series of properties similar to graphite, the feature with graphite, and heat-sinking capability is also good.
Preferably, the component of heat dissipating layer can also include elementary silicon, and the atom number of elementary silicon can account for heat dissipating layer
Atom number 5%~10% (preferably 6%).When the atom number that the atom number of elementary silicon accounts for heat dissipating layer is less than 5%
When, the ratio of diamond is relatively low in carbon simple substance, and the heat dissipation effect of heat dissipating layer is poor；When the atom number of elementary silicon accounts for heat dissipating layer
When atom number is more than 10%, it is readily incorporated defect, causes the crystal quality of heat dissipating layer poor.
Optionally, the thickness of heat dissipating layer can be 50 μm~500 μm.When the thickness of heat dissipating layer is less than 50 μm, heat dissipating layer
Protection and heat dissipation effect it is poor；When the thickness of heat dissipating layer is more than 500 μm, the waste of material can be caused.
Specifically, substrate 10 can be Sapphire Substrate, preferably PSS.Buffer layer 11 can be aln layer or nitrogen
Change gallium layer.N type semiconductor layer 12 can be the gallium nitride layer of n-type doping, and p type semiconductor layer 14 can be the nitridation of p-type doping
Gallium layer.Multiple quantum well layer 13 may include that multiple Quantum Well and multiple quantum are built, and multiple Quantum Well and multiple quantum build alternating layer
Folded, Quantum Well can be indium gallium nitrogen layer, and quantum base can be gallium nitride layer or gallium nitride layer.
More specifically, the thickness of buffer layer 11 can be 15nm~35nm (preferably 25nm).The thickness of n type semiconductor layer 12
Degree can be 1 μm~5 μm (preferably 3 μm), and the doping concentration of N type dopant can be 1018cm-3~1019cm-3(preferably 5*
1018cm-3)；The thickness of p type semiconductor layer 14 can be 100nm~800nm (preferably 400nm).The thickness of Quantum Well can be with
For 2.5nm~3.5nm (preferably 3nm), the thickness that quantum is built can be 9nm~20nm (preferably 15nm)；The number that quantum is built
Amount is identical as the quantity of Quantum Well, and the quantity of Quantum Well can be 3~15 (preferably 8).
Optionally, which can also include undoped gallium nitride layer, and undoped gallium nitride layer setting exists
It is N further to alleviate the lattice mismatch between Sapphire Substrate and n type semiconductor layer between buffer layer and n type semiconductor layer
The growth of type semiconductor layer etc. improves the preferable bottom of crystal quality.
Specifically, the thickness of undoped gallium nitride layer can be 0.1 μm~2 μm (preferably 1 μm).
Optionally, which can also include electronic barrier layer, and electronic barrier layer is arranged in multiple quantum wells
Between layer and p type semiconductor layer, to avoid non-radiative recombination is carried out in electron transition to p type semiconductor layer.
Specifically, electronic barrier layer can be the gallium nitride layer of p-type doping, such as AlyGa1-y0.5 (preferably y of N, 0.1 < y <
=0.3).
More specifically, the thickness of electronic barrier layer can be 50nm~150nm (preferably 100nm).
Optionally, which can also include transparency conducting layer, and transparency conducting layer is arranged in P-type semiconductor
On layer, to realize the extending transversely of electric current, the luminous efficiency of light emitting diode is improved.
Specifically, transparency conducting layer can be tin indium oxide (English：Indium tin oxide, referred to as：ITO) film.
Further, which can also include p-type contact layer, and p-type contact layer is arranged in P-type semiconductor
Between layer and transparency conducting layer, to realize the Ohmic contact between p type semiconductor layer and transparency conducting layer.
Specifically, p-type contact layer can be the indium gallium nitrogen layer of p-type doping.
More specifically, the thickness of p-type contact layer can be 5nm~300nm (preferably 150nm).
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of preparation method of light-emitting diode chip for backlight unit, which is characterized in that the preparation method includes：
A LED core grains are provided, the LED core grains include substrate, buffer layer, n type semiconductor layer, Multiple-quantum
Well layer, p type semiconductor layer, P-type electrode, N-type electrode and reflecting layer, the buffer layer, the n type semiconductor layer, the volume
Sub- well layer and the p type semiconductor layer stack gradually on the first surface of the substrate, and the p type semiconductor layer, which is equipped with, to be prolonged
The groove of the n type semiconductor layer is extended to, the N-type electrode is arranged on the n type semiconductor layer in the groove, the p-type
Electrode is arranged on the p type semiconductor layer, and the reflecting layer is arranged on the second surface of the substrate, the second surface
For the surface opposite with the first surface；
Heat dissipating layer is formed on the reflecting layer using pulsed laser deposition technique, the component of the heat dissipating layer includes carbon list
Matter, the atom number of the carbon simple substance account for 90% or more of the atom number of the heat dissipating layer；
The heat dissipating layer is fixed on cooling base by colloid.
2. preparation method according to claim 1, which is characterized in that described to use pulsed laser deposition technique described anti-
It penetrates and forms heat dissipating layer on layer, including：
One vacuum chamber for being equipped with graphite target is provided；
The LED core grains are put into the vacuum chamber, the vacuum chamber is vacuumized；
Be passed through hydrogen into the vacuum chamber, the control indoor temperature of vacuum is 200 DEG C~600 DEG C, pressure be 10Pa~
150Pa；
The graphite target is sputtered using laser, heat dissipating layer is formed on the reflecting layer.
3. preparation method according to claim 2, which is characterized in that mixed with elementary silicon, the silicon list in the graphite target
The atom number of matter accounts for the 5%~10% of the atom number of the graphite target.
4. preparation method according to claim 2, which is characterized in that the preparation method further includes：
When being passed through hydrogen into the vacuum chamber, it is passed through into the vacuum chamber with the flow of 10sccm~200sccm siliceous
The gas of element.
5. according to claim 2~4 any one of them preparation method, which is characterized in that the LED core grains and institute
It is 4.5cm~6.5cm to state the distance between graphite target.
6. according to claim 2~4 any one of them preparation method, which is characterized in that using laser to the graphite target into
When a length of 10min~60min of row sputtering.
7. a kind of light-emitting diode chip for backlight unit, the light-emitting diode chip for backlight unit includes LED core grains and cooling base, described
LED core grains include substrate, buffer layer, n type semiconductor layer, multiple quantum well layer, p type semiconductor layer, P-type electrode, N-type
Electrode and reflecting layer；The buffer layer, the n type semiconductor layer, the multiple quantum well layer and the p type semiconductor layer layer successively
It folds on the first surface of the substrate, the p type semiconductor layer is equipped with the groove for extending to the n type semiconductor layer, institute
It states on the n type semiconductor layer that N-type electrode is arranged in the groove, the P-type electrode is arranged on the p type semiconductor layer,
The reflecting layer is arranged on the second surface of the substrate, and the second surface is the surface opposite with the first surface；
It is characterized in that, the light-emitting diode chip for backlight unit further includes heat dissipating layer, the heat dissipating layer is laid on the reflecting layer, and
It is fixed on the cooling base by colloid；The component of the heat dissipating layer includes carbon simple substance, the atom of the carbon simple substance
Number accounts for 90% or more of the atom number of the heat dissipating layer.
8. light-emitting diode chip for backlight unit according to claim 7, which is characterized in that the carbon simple substance in the heat dissipating layer includes gold
Hard rock and graphite, the atom number of the diamond are the 40%~70% of the atom number of the carbon simple substance.
9. light-emitting diode chip for backlight unit according to claim 8, which is characterized in that the component of the heat dissipating layer further includes
Elementary silicon, the atom number of the elementary silicon account for the 5%~10% of the atom number of the heat dissipating layer.
10. according to claim 7~9 any one of them light-emitting diode chip for backlight unit, which is characterized in that the thickness of the heat dissipating layer
It is 50 μm~500 μm.
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