CN103249248A - Composite substrate, manufacturing method and LED vertical chip structure based on composite substrate - Google Patents
Composite substrate, manufacturing method and LED vertical chip structure based on composite substrate Download PDFInfo
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- CN103249248A CN103249248A CN2013101564628A CN201310156462A CN103249248A CN 103249248 A CN103249248 A CN 103249248A CN 2013101564628 A CN2013101564628 A CN 2013101564628A CN 201310156462 A CN201310156462 A CN 201310156462A CN 103249248 A CN103249248 A CN 103249248A
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Abstract
The invention discloses a composite substrate, a manufacturing method and an LED vertical chip structure based on the composite substrate. The composite substrate structurally comprises a substrate and graphene from bottom to top sequentially, wherein the substrate is a common substrate , such as CuW, SiC, Si, Mo and the like in an LED vertical chip. The composite substrate can be used as a bonding substrate in the manufacturing of the LED vertical chip and can bond the LED chip on a graphene layer. An LED adopting the composite substrate has better heat dissipation performance compared with that adopting the common use substrates of CuW, SiC and Si. Besides, the LED chip is bonded on the graphene layer of the composite substrate to form the LED vertical chip structure, so that the heat dissipation performance of the LED vertical chip structure can be improved effectively.
Description
Technical field
The invention belongs to technical field of semiconductors, relate to a kind of composite base plate, especially a kind of composite base plate of making for the LED vertical chip and manufacture method thereof and based on the LED vertical chip structure of this composite base plate.
Background technology
LED is to utilize the charge carrier spontaneous radiation be injected with the source region compound and send photon, has advantages such as environmental protection and energy saving, long service life, colour gamut are abundant.Therefore, LED has broad application prospects in fields such as illumination, display screen, traffic lights, Landscape Lighting and LCD backlights.
LED can only be converted into luminous energy with about input power of about 20%, and all the other 80% have changed into heat energy.Along with the increase of power, it is more and more outstanding that heat dissipation problem becomes.The bad meeting of dispelling the heat causes that LED efficient and performance descend, and the life-span reduces.Traditional LED is owing to adopt sapphire as substrate, and the sapphire electrical and thermal conductivity performance is poor, can only make same side electrode structure.The LED of this structure because heat radiation is bad, and has the electric current effect of blocking up, has limited its application in great power LED.The vertical chip technology is compared traditional structure LED, and it is big to have a light-emitting area, good heat conductivity, and the electric current advantages such as effect improving of blocking up are representing the development trend of following led chip structure.Vertical chip preparation is that the Sapphire Substrate chip p-GaN layer of growing is bonded on the substrate (CuW, Mo, SiC, Si), and laser lift-off falls Sapphire Substrate again.The heat conductivility of LED vertical chip bonding substrate affects the heat-sinking capability of LED vertical chip to a great extent.Therefore, seek the more substrate of high thermal conductivity, be significant for the heat-sinking capability that improves the LED vertical chip.
Summary of the invention
The objective of the invention is to overcome the shortcoming of above-mentioned prior art, provide a kind of composite base plate, manufacture method to reach the LED vertical chip structure based on this composite base plate, the present invention is transferred to substrate with Graphene, prepares substrate+Graphene composite base plate and has the higher capacity of heat transmission.Make the present invention can effectively improve the capacity of heat transmission of substrate.The substrate of high thermal conductivity coefficient more can improve the heat dispersion of LED vertical chip.
The objective of the invention is to solve by the following technical programs:
The present invention at first proposes a kind of composite base plate, and it is made up of according to order from the bottom to top substrate and Graphene.
Aforesaid substrate is CuW, Mo, SiC or Si substrate.
Aforesaid substrate thickness is 100～400 μ m.
The number of plies of above-mentioned Graphene is 1～10 layer.
The present invention also proposes the manufacture method of the composite base plate that a kind of LED vertical chip makes, and this method at the Copper Foil Graphene of growing, is transferred to substrate by the PDMS medium with the CVD method then.
Further, above method specifically may further comprise the steps:
(1) adopt the CVD method at the Copper Foil Graphene of growing:
1) copper substrate is put into the hot wall stove, fed H
2, be heated to 1000 ℃, H
2Flow is 2sccm, pressure 40mTorr in the stove;
2) make copper substrate be stabilized in 1000 ℃, feed CH
4, pressure 500mTorr in the flow 35sccm, stove;
3) feed CH
4After 20 minutes, stove is cooled to room temperature, 100 ℃/min of cooldown rate;
(2) spin coating PDMS:
The shiny surface of the PDMS sheet made is sticked on the surface of Graphene, leave standstill except bubble;
(3) use FeCl
3Erode the copper substrate:
The Cu matrix that will have the growth Graphene of PDMS is put into FeCl
3In the solution;
(4) Graphene is affixed on the substrate:
After etching, the PDMS that has Graphene can swim on the liquid level, and water sticks on it on substrate after cleaning the PDMS sheet, leaves standstill except taking PDMS behind the bubble again off.
In addition, the present invention also proposes a kind of LED vertical chip structure of above-mentioned composite base plate, and this LED vertical chip structure is bonded in led chip on the graphene layer of described composite base plate.
Described led chip is provided with substrate, graphene layer, ZnO nm wall/GaN, n-GaN layer, InGaN/GaN Multiple Quantum Well and p-GaN from bottom to top successively.
The present invention has following beneficial effect:
Composite base plate involved in the present invention can be used for the bonding substrate in the preparation of LED vertical chip, and the led chip that Sapphire Substrate is grown is bonded on the graphene layer.Based on the LED of composite base plate of the present invention, not only have the intrinsic advantage of vertical stratification LED, and compare the LED that existing substrate makes, have better heat dispersion.
The present invention adopts the substrate with good conductive and heat-conductive and mechanical performance, adopts graphene conductive, make its have conductive coefficient the highest in the existing material (～5000w/mK).And in order to improve the conductive coefficient of substrate, the present invention is transferred to substrate with Graphene in preparation process, prepares substrate+Graphene composite base plate and has the higher capacity of heat transmission.
Further, the Mo that selects for use with substrate of the present invention is example, under the room temperature, records Mo with laser heat conducting instrument and adheres to single-layer graphene conductive coefficient 249W/mK (the Mo conductive coefficient is 138W/mK), adheres to multilayer (2～10 layers) Graphene conductive coefficient 220W/mK.Confirm the introducing of Graphene, can improve the capacity of heat transmission of substrate.The substrate of high thermal conductivity coefficient more can improve the heat dispersion of LED vertical chip.
Description of drawings
Fig. 1 is that Graphene is transferred to flow path substrate figure.
Wherein: 1-with the CVD method at the Copper Foil Graphene of growing; 2-spin coating PDMS; 3-erodes the copper substrate with FeCl3; 4-affixes to Graphene on the substrate; 5-removes PDMS.
Fig. 2 is vertical stratification LED shown in the present.
Fig. 3 is the structural representation of led chip of the present invention.
Embodiment
Below in conjunction with accompanying drawing the present invention is done and to describe in further detail:
With reference to figure 1 and Fig. 2, composite base plate of the present invention is made up of according to order from the bottom to top substrate and Graphene.Described substrate is CuW, Mo, SiC or Si substrate; Substrate thickness is 100～400 μ m.The number of plies of described Graphene is 1～10 layer.
The manufacture method of composite base plate of the present invention be with the CVD method at the Copper Foil Graphene of growing, be transferred to substrate by the PDMS medium then.As shown in Figure 1, this method specifically may further comprise the steps:
1. adopt the CVD method at the Copper Foil Graphene of growing
(1) copper substrate is put into the hot wall stove, fed H
2, be heated to 1000 ℃, H
2Flow is 2sccm, pressure 40mTorr in the stove.
(2) make copper substrate be stabilized in 1000 ℃, feed CH
4, pressure 500mTorr in the flow 35seem, stove.
(3) feed CH
4After 20 minutes, stove is cooled to room temperature.100 ℃/min of cooldown rate.
2. spin coating PDMS
The shiny surface of the PDMS sheet made is sticked on the surface of Graphene, leave standstill except bubble.
3. use FeCl
3Erode the copper substrate
The Cu matrix that will have the growth Graphene of PDMS is put into FeCl
3In the solution, erode the copper substrate.
4. Graphene is affixed on the substrate
After etching, the PDMS that has Graphene can swim on the liquid level.
5. remove PDMS
Water sticks on it on substrate after cleaning the PDMS sheet, leaves standstill except taking PDMS behind the bubble again off.
With reference to figure 3, described led chip is provided with substrate, graphene layer, ZnO nm wall/GaN, n-GaN layer, InGaN/GaN Multiple Quantum Well and p-GaN from bottom to top successively.
The present invention also proposes a kind of LED vertical chip structure, and it is bonded in led chip on the graphene layer of described composite base plate.As shown in Figure 2, the p-GaN laminar surface of led chip is plated one deck Ag reflectance coating, adopt bonding technology then, be bonded on the graphene layer, last laser lift-off falls Sapphire Substrate.The various technologies that wherein relate to, as the growth of LED epitaxial loayer, bonding is peeled off etc., all can pass through existing techniques in realizing.
Claims (9)
1. a composite base plate is characterized in that, is made up of according to order from the bottom to top substrate and Graphene.
2. according to the described composite base plate of claim 1, it is characterized in that described substrate is CuW, Mo, SiC or Si substrate.
3. composite base plate according to claim 2 is characterized in that, described substrate thickness is 100～400 μ m.
4. composite base plate according to claim 1 is characterized in that, the number of plies of described Graphene is 1～10 layer.
5. the manufacture method of a composite base plate is characterized in that, at the Copper Foil Graphene of growing, is transferred to substrate by the PDMS medium with the CVD method then.
6. the manufacture method of composite base plate according to claim 5 is characterized in that, specifically may further comprise the steps:
(1) adopt the CVD method at the Copper Foil Graphene of growing:
1) copper substrate is put into the hot wall stove, fed H
2, be heated to 1000 ℃, H
2Flow is 2sccm, pressure 40mTorr in the stove;
2) make copper substrate be stabilized in 1000 ℃, feed CH
4, pressure 500mTorr in the flow 35sccm, stove;
3) feed CH
4After 20 minutes, stove is cooled to room temperature, 100 ℃/min of cooldown rate;
(2) spin coating PDMS:
The shiny surface of the PDMS sheet made is sticked on the surface of Graphene, leave standstill except bubble;
(3) use FeCl
3Erode the copper substrate:
The Cu matrix that will have the growth Graphene of PDMS is put into FeCl
3In the solution;
(4) Graphene is affixed on the substrate:
After etching, the PDMS that has Graphene can swim on the liquid level, and water sticks on it on substrate after cleaning the PDMS sheet, leaves standstill except taking PDMS behind the bubble again off.
7. the LED vertical chip structure based on any described composite base plate of claim 1-4 is characterized in that, led chip is bonded on the graphene layer of described composite base plate.
8. LED vertical chip structure according to claim 7 is characterized in that, the p-GaN laminar surface of led chip is plated one deck Ag reflectance coating, adopts bonding technology then, is bonded on the graphene layer, and last laser lift-off falls Sapphire Substrate.
9. LED vertical chip structure according to claim 7 is characterized in that, described led chip is provided with substrate, graphene layer, ZnO nm wall/GaN, n-GaN layer, InGaN/GaN Multiple Quantum Well and p-GaN from bottom to top successively.
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| CN201310156462.8A CN103249248B (en) | 2013-04-28 | 2013-04-28 | Composite base plate, manufacture method and the LED vertical chip structure based on this composite base plate |
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| CN201310156462.8A CN103249248B (en) | 2013-04-28 | 2013-04-28 | Composite base plate, manufacture method and the LED vertical chip structure based on this composite base plate |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104538526A (en) * | 2014-12-24 | 2015-04-22 | 北京中科天顺信息技术有限公司 | Nitride LED epitaxial wafer structure based on copper substrate and manufacturing method thereof |
| CN104576850A (en) * | 2015-01-16 | 2015-04-29 | 太原理工大学 | Preparing method for light-emitting diode of vertical structure |
| CN104576862A (en) * | 2014-12-24 | 2015-04-29 | 北京中科天顺信息技术有限公司 | Copper substrate-based nitride LED vertical chip and preparation method thereof |
| CN104637794A (en) * | 2015-01-27 | 2015-05-20 | 北京中科天顺信息技术有限公司 | Vertical chip structure for nitride LED (light-emitting diode) and preparation method of vertical chip structure |
| CN105280745A (en) * | 2014-06-05 | 2016-01-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | GaInP/GaAs/InGaAs/Ge quadruple-junction cascade solar cell and manufacturing method thereof |
| CN108521717A (en) * | 2018-06-04 | 2018-09-11 | 南京大学 | The PTFE base PCB copper-clad plates and preparation method that a kind of graphene is modified |
| CN108767102A (en) * | 2018-03-26 | 2018-11-06 | 华灿光电（浙江）有限公司 | A kind of light-emitting diode chip for backlight unit and preparation method thereof |
| CN114559147A (en) * | 2021-04-21 | 2022-05-31 | 河南科技大学 | Preparation method of copper alloy composite board |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105280745B (en) * | 2014-06-05 | 2018-04-24 | 中国科学院苏州纳米技术与纳米仿生研究所 | Tetra- knot cascade solar cells of GaInP/GaAs/InGaAs/Ge and preparation method thereof |
| CN105280745A (en) * | 2014-06-05 | 2016-01-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | GaInP/GaAs/InGaAs/Ge quadruple-junction cascade solar cell and manufacturing method thereof |
| CN104576862A (en) * | 2014-12-24 | 2015-04-29 | 北京中科天顺信息技术有限公司 | Copper substrate-based nitride LED vertical chip and preparation method thereof |
| CN104538526A (en) * | 2014-12-24 | 2015-04-22 | 北京中科天顺信息技术有限公司 | Nitride LED epitaxial wafer structure based on copper substrate and manufacturing method thereof |
| CN104538526B (en) * | 2014-12-24 | 2017-05-24 | 江苏巨晶新材料科技有限公司 | Nitride LED epitaxial wafer structure based on copper substrate and manufacturing method thereof |
| CN104576862B (en) * | 2014-12-24 | 2017-08-25 | 江苏巨晶新材料科技有限公司 | A kind of nitride LED vertical chip based on copper substrate and preparation method thereof |
| CN104576850A (en) * | 2015-01-16 | 2015-04-29 | 太原理工大学 | Preparing method for light-emitting diode of vertical structure |
| CN104576850B (en) * | 2015-01-16 | 2017-02-22 | 太原理工大学 | Preparing method for light-emitting diode of vertical structure |
| CN104637794A (en) * | 2015-01-27 | 2015-05-20 | 北京中科天顺信息技术有限公司 | Vertical chip structure for nitride LED (light-emitting diode) and preparation method of vertical chip structure |
| CN108767102A (en) * | 2018-03-26 | 2018-11-06 | 华灿光电（浙江）有限公司 | A kind of light-emitting diode chip for backlight unit and preparation method thereof |
| CN108521717A (en) * | 2018-06-04 | 2018-09-11 | 南京大学 | The PTFE base PCB copper-clad plates and preparation method that a kind of graphene is modified |
| CN114559147A (en) * | 2021-04-21 | 2022-05-31 | 河南科技大学 | Preparation method of copper alloy composite board |
| CN114559147B (en) * | 2021-04-21 | 2024-03-12 | 河南科技大学 | Preparation method of copper alloy composite board |
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| CN103249248B (en) | 2016-06-08 |
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