CN101599523A - The light emitting diode (LED) chip with vertical structure and the manufacture method thereof that adopt conducting polymer to shift - Google Patents
The light emitting diode (LED) chip with vertical structure and the manufacture method thereof that adopt conducting polymer to shift Download PDFInfo
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- CN101599523A CN101599523A CNA2009100398821A CN200910039882A CN101599523A CN 101599523 A CN101599523 A CN 101599523A CN A2009100398821 A CNA2009100398821 A CN A2009100398821A CN 200910039882 A CN200910039882 A CN 200910039882A CN 101599523 A CN101599523 A CN 101599523A
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Abstract
The present invention puies forward a kind of light emitting diode (LED) chip with vertical structure and manufacture method thereof that adopts conducting polymer to shift, and it is an evaporation ITO transparency conducting layer on Sapphire Substrate LED epitaxial wafer; Evaporating Al or Ag or Pt are as the reflector on transparency conducting layer; Coating conductive adhesive with high heat conductivity on the reflector; By conducting resinl the LED epitaxial wafer is bonded on the high heat conductivity substrate; Adopt inductively coupled plasma (ICP) or reactive ion etching (RIE) n-GaN, active layer and p-GaN; Adopt KOH solution that unadulterated GaN layer is etched away, and alligatoring is carried out on the n-GaN surface; Evaporating n face electrode and p face electrode.Such scheme has improved the combination property of the radiating efficiency and the led chip of product.
Description
Technical field
The present invention relates to a kind of vertical stratification GaN based power type light-emitting diode (LED) chip production method, be particularly related to a kind of high heat conduction, conducting polymer of adopting Sapphire Substrate GaN base LED epitaxial wafer is transferred on the material with high heat conductance, led chip of preparation top-bottom electrode structures and preparation method thereof.
Background technology
GaN base blue light, blue-green light LED (LED) are widely used in meter lamp, large scale LED-backlit source, electronic bill-board and the various lighting apparatus.Because the restriction of aspects such as GaN crystal structure, growth conditions during growing GaN base LED epitaxial loayer, mainly selects sapphire as substrate.Because sapphire conductivity and thermal conductance rate variance cause GaN base LED complex manufacturing technology, weak heat-dissipating, life-span weak point, have therefore limited the application of high-brightness LED.The GaN base LED chip of horizontal electrode structure is because of p electrode frequency modulated light, and active area is etched away on the n face, and the p electrode is made complicated, therefore is difficult to luminous power and the efficient of the further LED of raising.In order to address these problems, U.S. Cree company has proposed to adopt the GaN base LED of SiC as the top-bottom electrode structures of substrate, by the bright dipping of n face, has effectively solved the problem of heat radiation and frequency modulated light, and vertical electricity is led the injection that helps charge carrier, the combined efficiency of raising charge carrier.But SiC is more expensive than sapphire substrate, and processing is also difficult more, has therefore restricted it and has promoted the use of.
Adopt bonding techniques and lift-off technology to combine (as alloy materials such as Si, Cu and Al) on the substrate that GaN base LED epitaxial loayer can be transferred to other high conductivity, high heat conductance, thereby eliminate the adverse effect that Sapphire Substrate is brought GaN base LED.In wafer bonding technology, the transparent polymer of main at present employing metal and insulation is made bonding material, but there are the following problems to be to use these materials to make bonded layer: (1) adopts metal bonding to be unfavorable for the transparent polymer that the slice process (2) of postorder insulate owing to can not conduct electricity, and therefore can not make the LED of vertical stratification.
Summary of the invention
Content of the present invention provides a kind of light emitting diode (LED) chip with vertical structure and manufacture method thereof that adopts conducting polymer to shift, it adopts conducting polymer that Sapphire Substrate LED epitaxial wafer is transferred on the material with high heat conductance, with the preparation light emitting diode (LED) chip with vertical structure, improve the combination property of radiating efficiency and led chip.
For achieving the above object, to adopt conducting resinl to make the concrete structure of light emitting diode (LED) chip with vertical structure of bonded layer preparation as follows in the present invention:
The concrete structure of the light emitting diode (LED) chip with vertical structure that the conducting polymer that the present invention adopts shifts is as follows:
High thermal conductivity material is as the support substrates of light emitting diode (LED) chip with vertical structure;
It on high heat conductivity substrate the conducting polymer of high heat conductance;
Be the reflector above the conducting polymer, its material is Al or Ag or Pt;
It above the reflector ITO transparency conducting layer;
Be n type electrode above the LED epitaxial loayer, this n type electrode successively is Ti/Al/Ti/Au.
Method of the present invention is to adopt thermal evaporation or electron beam evaporation to make ITO transparency conducting layer and Al (Ag) reflector on the p of chip face, then high heat conduction, the conducting resinl of coating adhesive strength on the reflector.By this conducting resinl Sapphire Substrate LED epitaxial wafer is transferred on the substrate of high heat conductance, then adopt chemico-mechanical polishing (CMP) or laser lift-off or wet etching to peel off Sapphire Substrate, adopt inductively coupled plasma (ICP) or reactive ion etching (RIE) n-GaN, active layer and p-GaN, with KOH solution unadulterated GaN layer is etched away, and the n-GaN surface carried out alligatoring, prepare Ohm contact electrode on the n face, this electrode is Ti/Al/Ti/Au or Ti/Al/Pt/Au.
Major advantage of the present invention has:
(1) adopts conducting polymer to shift epitaxial wafer, make the slice process of postorder easier.
(2) adopt the conducting polymer of high heat conductance that the LED epitaxial wafer is transferred on the substrate with high heat conductance, reduced the thermal resistance of chip, improved the combination property of radiating efficiency and led chip.
(3) light extraction efficiency of chip has been improved in the reflector.
(4) employing vertical electrode structure has effectively solved the problem of heat radiation and frequency modulated light, and vertical electricity is led the injection that helps charge carrier, the combined efficiency of raising charge carrier.
Description of drawings
The present invention will be described in detail below in conjunction with accompanying drawing:
Fig. 1 is the cross-sectional view of the light emitting diode (LED) chip with vertical structure of employing conducting polymer transfer;
Fig. 2 a～Fig. 2 g adopts conducting polymer to shift, and makes the process chart of light emitting diode (LED) chip with vertical structure;
Fig. 2 a is the cross-sectional view of Sapphire Substrate LED epitaxial wafer;
Fig. 2 b is evaporation transparency conducting layer ITO on Sapphire Substrate LED epitaxial wafer;
Fig. 2 c is evaporation reflector Al on Sapphire Substrate LED epitaxial wafer
Fig. 2 d conducting polymer shifts schematic diagram;
Fig. 2 e peels off Sapphire Substrate;
Fig. 2 f adopts inductively coupled plasma (ICP) etching GaN base LED epitaxial wafer;
Fig. 2 g carries out surface coarsening to the n face to be handled, and evaporation Ti/Al/Ti/Au contact layer;
Embodiment
Be that embodiment is illustrated as high heat conductivity substrate only below with silicon (Si).
Adopt conducting polymer to prepare the method for light emitting diode (LED) chip with vertical structure and the structure of chip below with reference to accompanying drawing detailed description of the present invention as bonded layer with high heat conductance.
Fig. 1 is the cross-sectional view of the light emitting diode (LED) chip with vertical structure of employing conducting polymer bonding, describes the structure and the characteristics of the light emitting diode (LED) chip with vertical structure on silicon substrate produced according to the present invention in detail below in conjunction with accompanying drawing 1.
(1) high heat conductivity substrate (100) is as the substrate of light emitting diode (LED) chip with vertical structure.
(2) above the high heat conductivity substrate be conducting polymer (101), reflector (102) are ITO transparency conducting layer (103) above the reflector, and the reflector makes the photon reflection that sees through transparency conducting layer to exiting surface n-GaN face.
(3) the GaN base LED epitaxial wafer comprises the n-GaN layer (106) that p-GaN layer (104) that thickness is 0.2um, AlInGaN multiple quantum well active layer (105) that thickness is 0.1um and thickness are 4um, adopt KOH solution that the n-GaN layer is carried out surface coarsening and handle, improve light extraction efficiency.
(4) above the n-GaN layer be n electrode (107), its structure is Ti/Al/Ti/Au, and thickness is 200～2000nm.
(5) below the high heat conductivity substrate be the p electrode, electrode material is Cr/Pt/Au.
Fig. 2 a～Fig. 2 g is the manufacturing process flow diagram that adopts the light emitting diode (LED) chip with vertical structure of conducting polymer transfer.Wherein Fig. 2 a is the cross-sectional view of Sapphire Substrate LED epitaxial wafer; Fig. 2 b prepares transparency conducting layer ITO on Sapphire Substrate LED epitaxial wafer; Fig. 2 c prepares the reflector on Sapphire Substrate LED epitaxial wafer; Fig. 2 d conducting polymer shifts schematic diagram; Fig. 2 e peels off Sapphire Substrate; Fig. 2 f adopts inductively coupled plasma (ICP) etching GaN base LED epitaxial wafer; Fig. 2 g carries out surface coarsening to the n face to be handled, and evaporation Ti/Al/Ti/Au contact layer.
In conjunction with Fig. 2 a～Fig. 2 g, it is as follows to describe concrete implementation step of the present invention in detail:
(1) Sapphire Substrate LED epitaxial wafer is cleaned in standard liquid.At first the LED sample is immersed in the HCL solution and handled 1 minute, then in the chloroazotic acid of boiling, handled 10 minutes, in deionized water, clean then;
(2) adopt electron beam evaporation evaporation ITO transparency conducting layer on Sapphire Substrate LED epitaxial wafer;
(3) evaporating Al or Ag or Pt are as the reflector on the ITO transparency conducting layer, and this reflector can reflex to the light of directive p-GaN layer exiting surface n-GaN face;
(4) coating electrically conductive polymer on reflector and silicon substrate;
(5) adopt conducting polymer to shift;
(6) adopt CMP or wet etching to peel off Sapphire Substrate;
(7) adopt inductively coupled plasma (ICP) or reactive ion etching (RIE) n-GaN, active layer and p-GaN;
(8) adopt KOH solution that unadulterated GaN layer is etched away, and alligatoring is carried out on the n-GaN surface, use H
2SO
4/ H
2O
2/ H
2O solution cleans the n-GaN surface;
(9) evaporating n face electrode forms ohmic contact to through the n-GaN layer behind the surface coarsening.Electrode structure is Ti/Al/Ti/Au or Ti/Al/Pt/Au, and thickness is 200～2000nm.
Although disclose specific embodiments of the invention and accompanying drawing for the purpose of illustration; but persons skilled in the art are according to content disclosed by the invention; can adopt other multiple embodiment to implement the present invention; therefore; every employing technical scheme of the present invention and thinking; do some simple variations or change, all fall into the scope of protection of the invention.
Claims (7)
1, a kind of light emitting diode (LED) chip with vertical structure that adopts conducting polymer to shift, it is characterized in that: concrete structure comprises with the lower part:
High thermal conductivity material is as the support substrates of light emitting diode (LED) chip with vertical structure;
It on high heat conductivity substrate the conducting polymer of high heat conductance;
Be the reflector above the conducting polymer, its material is Al or Ag or Pt;
It above the reflector ITO transparency conducting layer;
Be n type electrode above the LED epitaxial loayer, this n type electrode successively is Ti/Al/Ti/Au.
2, a kind of light emitting diode (LED) chip with vertical structure that adopts conducting polymer to shift according to claim 1, it is characterized in that: the thickness in reflector is 500nm.
3, a kind of light emitting diode (LED) chip with vertical structure that adopts conducting polymer to shift according to claim 1, it is characterized in that: the thickness of ITO transparency conducting layer is 300nm.
4, a kind of light emitting diode (LED) chip with vertical structure that adopts conducting polymer to shift according to claim 1 is characterized in that: the conducting polymer of high heat conductance, its thermal conductivity be greater than 100W/mk, and resistivity is less than 10u Ω cm.
5, a kind of light emitting diode (LED) chip with vertical structure that adopts conducting polymer to shift according to claim 1, it is characterized in that: conducting polymer is nanometer conductive polymer and anisotropy conductiving glue.
6, a kind of light emitting diode (LED) chip with vertical structure that adopts conducting polymer to shift according to claim 1, it is characterized in that: the substrate of high heat conductance is a kind of or its alloy in silicon (Si), copper (Cu), aluminium (Al) or the titanium (Ti).
7, a kind of manufacture method that adopts the light emitting diode (LED) chip with vertical structure of conducting polymer transfer specifically may further comprise the steps:
(1) evaporation transparency conducting layer on Sapphire Substrate LED epitaxial wafer;
(2) on transparency conducting layer evaporating Al or Ag or Pt as the reflector;
(3) coating conductive adhesive with high heat conductivity on the reflector;
(4) by conducting resinl the LED epitaxial wafer is transferred on the high heat conductivity substrate;
(5) adopt inductance coupling high gas ions (ICP) or reactive ion etching (RIE) n-GaN, active layer and p-GaN;
(6) adopt KOH solution that unadulterated GaN layer is etched away, and alligatoring is carried out on the n-GaN surface;
(7) evaporating n face electrode forms ohmic contact to through the n-GaN layer behind the surface coarsening, and electrode structure is Ti/Al/Ti/Au or Ti/Al/Pt/Au or Cr/Pt/Au.
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| CN101964385A (en) * | 2010-10-28 | 2011-02-02 | 映瑞光电科技(上海)有限公司 | Light emitting diode and making method thereof |
| CN101969092A (en) * | 2010-09-16 | 2011-02-09 | 兰红波 | Metal substrate photonic quasi-crystal HB-LED (High-Brightness Light Emitting Diode) chip in vertical structure as well as manufacturing method and application thereof |
| CN102157649A (en) * | 2011-01-31 | 2011-08-17 | 杭州士兰明芯科技有限公司 | Gallium nitride light-emitting diode (GaN LED) chip with vertical structure and manufacturing method thereof |
| CN102185040A (en) * | 2011-03-15 | 2011-09-14 | 浙江长兴立信光电科技有限公司 | LED (Light-Emitting Diode) surface roughening process with wet-method chemical corrosion |
| CN102194940A (en) * | 2010-11-16 | 2011-09-21 | 华灿光电股份有限公司 | Light-emitting diode (LED) with built-in reflector and preparation method thereof |
| CN102214746A (en) * | 2011-06-13 | 2011-10-12 | 江西联创光电科技股份有限公司 | Method for manufacturing gallium nitride-based power LED (Light-Emitting Diode) chip |
| CN102347436A (en) * | 2011-10-26 | 2012-02-08 | 晶科电子（广州）有限公司 | LED (Light-emitting Diode) device and wafer-level LED device as well as packaging structure of LED device and wafer-level LED device |
| CN102623592A (en) * | 2012-04-13 | 2012-08-01 | 杭州士兰明芯科技有限公司 | Vertical light-emitting diode (LED) chip and corresponding producing method thereof |
| CN102841281A (en) * | 2012-09-18 | 2012-12-26 | 苏州纳方科技发展有限公司 | Detection method and device for LED epitaxial wafer |
| CN103022301A (en) * | 2011-09-20 | 2013-04-03 | 上海蓝光科技有限公司 | High-power GaN-based vertical structure LED with light extraction microstructure and preparation method thereof |
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| CN101969092A (en) * | 2010-09-16 | 2011-02-09 | 兰红波 | Metal substrate photonic quasi-crystal HB-LED (High-Brightness Light Emitting Diode) chip in vertical structure as well as manufacturing method and application thereof |
| CN101969092B (en) * | 2010-09-16 | 2014-03-26 | 兰红波 | Metal substrate photonic quasi-crystal HB-LED (High-Brightness Light Emitting Diode) chip in vertical structure as well as manufacturing method and application thereof |
| CN101964385A (en) * | 2010-10-28 | 2011-02-02 | 映瑞光电科技(上海)有限公司 | Light emitting diode and making method thereof |
| CN102194940A (en) * | 2010-11-16 | 2011-09-21 | 华灿光电股份有限公司 | Light-emitting diode (LED) with built-in reflector and preparation method thereof |
| CN102157649A (en) * | 2011-01-31 | 2011-08-17 | 杭州士兰明芯科技有限公司 | Gallium nitride light-emitting diode (GaN LED) chip with vertical structure and manufacturing method thereof |
| CN102185040A (en) * | 2011-03-15 | 2011-09-14 | 浙江长兴立信光电科技有限公司 | LED (Light-Emitting Diode) surface roughening process with wet-method chemical corrosion |
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| CN102214746A (en) * | 2011-06-13 | 2011-10-12 | 江西联创光电科技股份有限公司 | Method for manufacturing gallium nitride-based power LED (Light-Emitting Diode) chip |
| CN103022301A (en) * | 2011-09-20 | 2013-04-03 | 上海蓝光科技有限公司 | High-power GaN-based vertical structure LED with light extraction microstructure and preparation method thereof |
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Assignee: Hunan Yiyuan Photoelectric Technology Co., Ltd. Assignor: Guangdong Shaoxin Opto-electrical Technology Co., Ltd. Contract record no.: 2011430000048 Denomination of invention: Light emitting diode (LED) chip with vertical structure adopting electric conduction polymer transferring and manufacturing method thereof License type: Exclusive License Open date: 20091209 Record date: 20110421 |
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Open date: 20091209 |