CN103022301A - High-power GaN-based vertical structure LED with light extraction microstructure and preparation method thereof - Google Patents

High-power GaN-based vertical structure LED with light extraction microstructure and preparation method thereof Download PDF

Info

Publication number
CN103022301A
CN103022301A CN2011102796905A CN201110279690A CN103022301A CN 103022301 A CN103022301 A CN 103022301A CN 2011102796905 A CN2011102796905 A CN 2011102796905A CN 201110279690 A CN201110279690 A CN 201110279690A CN 103022301 A CN103022301 A CN 103022301A
Authority
CN
China
Prior art keywords
structural
micro
layer
preparation
led
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011102796905A
Other languages
Chinese (zh)
Inventor
李睿
齐胜利
郝茂盛
陶淳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Blue Light Technology Co Ltd
Epilight Technology Co Ltd
Original Assignee
Shanghai Blue Light Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Blue Light Technology Co Ltd filed Critical Shanghai Blue Light Technology Co Ltd
Priority to CN2011102796905A priority Critical patent/CN103022301A/en
Publication of CN103022301A publication Critical patent/CN103022301A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Led Devices (AREA)

Abstract

The invention discloses a high-power GaN-based vertical structure LED with a light extraction microstructure and a preparation method thereof. According to the invention, the LED prepared through the preparation method is provided with a light-emitting surface microstructure transferred through a laser-stripping sapphire pattern substrate and complemented with patterns positioned on the surface of the laser-stripping sapphire pattern substrate; a means which has great high repetitiveness and controls the light-emitting surface microstructure is provided because the morphology of the light-emitting surface microstructure of the laser-stripping sapphire pattern substrate can be controlled through a process means; besides, nanometer-level coarsing is additionally carried out on the local area of a light-emitting surface, therefore the morphology of the light-emitting surface is further optimized; a mirror surface metallic reflection layer is changed into a nanometer-level rough grain metallic diffuse reflection layer during the LED preparation of the traditional process, so that the diffuse reflection and scattering effect is enhanced, the collocation of the reflection layer and the light-emitting surface microstructure is optimized, and the extraction efficiency of light inside the LED is furthest increased. The preparation method disclosed by the invention is simple in process and high in repeatability and can be used for large-scale industrial production.

Description

Have light and extract high-power GaN based vertical structure LED of micro-structural and preparation method thereof
Technical field
The present invention relates to a kind of LED and preparation method thereof, relate in particular to a kind of high-power GaN based vertical structure LED with light extraction micro-structural and preparation method thereof.
Background technology
Have the solution of potentiality as high-power GaN-based LED of future generation (High-power LEDs), vertical structure LED is just obtaining very big concern and the development of industry.Compare the positive assembling structure of tradition, vertical stratification has been peeled off Sapphire Substrate, can directly arrange the reflector at extension P type layer, the light of the non-exiting surface of the random directive of device inside active area directly passes through reflective layer reflects, common reflector is Prague Distributed reflection layer of metallic reflector or dielectric substance formation etc., has avoided causing owing to the non-exiting surface of the random directive of device inside active area the reduction of light extraction efficiency.But the common evaporation in reflector is rendered as mirror-reflection on the transparent contact layer of smooth ITO, and this raising to LED light extraction efficiency has very large restriction.
Simultaneously, the light extraction efficiency of GaN base LED is limited by refringence huge between GaN and the air, according to snell law, the critical angle of light from GaN (n ≈ 2.5) to air (n=1.0) is about 23 °, only can shine in air in critical angle with interior light in incidence angle, and the light beyond the critical angle can only come in GaN inside back reflective, until by self-absorption.And in this respect, vertical stratification has natural advantage, and the N-type GaN layer surface chemical property that exposes after at the bottom of the peeling liner is active, is easy to and KOH or H 3PO 4Reacting forms small pyramid pattern, namely carries out surface coarsening by the soda acid wet etching, and this can enlarge markedly the exit probability of device inside light.It is unsatisfactory that but the soda acid wet etching obtains size and the degree of depth consistency of micro-structural, and repeatability is not high, and this quality to the LED product has a great impact.
Hence one can see that, and LED is the same with traditional structure, and vertical structure LED also is faced with the problem that how to improve the light extraction efficiency.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind ofly to have light and extract high-power GaN based vertical structure LED of micro-structural and preparation method thereof, Led light extraction efficiency of the prior art is low to solve, the repeated problem such as not high of light extraction structure.
Reach in order to achieve the above object other purposes, the invention provides a kind of high-power GaN based vertical structure LED that light extracts micro-structural that has, described LED comprises at least: the polycrystalline substance layer, comprise a conductive support substrate, be bonded to the metal bonding electrode layer of described conductive support substrate upper surface, be incorporated into the metal reflecting electrode layer of described metal bonding electrode layer upper surface, and have the ITO layer that a upper surface and has the lower surface of nanoscale rough grain, and the lower surface of described ITO layer is incorporated into the upper surface of described metal reflecting electrode layer to form an optics diffuse reflector; The epitaxial structure layer is incorporated into the upper surface of described ITO layer, comprises P type GaN layer, be incorporated into the active region layer on the described P type GaN layer, and be incorporated into the N-type GaN layer on the described active region layer, and the upper surface of described N-type GaN layer has bright dipping micro-structural and N electrode; And SiO 2Passivation layer, be formed at described epitaxial structure layer around the side.
In LED of the present invention, described bright dipping micro-structural is included in upper surface the micron order micro-structural that forms and the nanoscale micro-structural that forms at described micron order micro-structure surface of N-type GaN layer.
In LED of the present invention, described micron order micro-structural is to have bullet tapered protrusion structure, triangular taper bulge-structure, truncation triangular pyramid bulge-structure or the truncation triangular pyramid sunk structure that certain intervals is arranged.
In LED of the present invention, described micron order micro-structural comprises that a micron order micro-structural low level zone, that is in low level is in the high-order zone of high-order micron order micro-structural and a micron order micro-structural zone line that is between the described high-low position zone.
In LED of the present invention, described nanoscale micro-structural is a large amount of nanoscale pyramid bulge-structures that are formed at described micron order micro-structural high-low position region surface.
In addition, the present invention also provides a kind of preparation method that light extracts the high-power GaN based vertical structure LED of micro-structural that has, and it comprises step at least:
Step 1, one Sapphire Substrate is provided, and surface etch goes out required figure thereon, the sapphire pattern substrate that has special pattern to prepare a upper surface, then on described sapphire pattern substrate, grow successively N-type GaN layer, active region layer and P type GaN layer with the formation epitaxial structure, and form SiO on the surface of described Sapphire Substrate and epitaxial structure 2Passivation layer;
Step 2, evaporation goes out the ITO layer on described P type GaN layer, and the surface by the described ITO layer of etching technics alligatoring, to form nano level rough grain on this surface, fusion P type GaN layer and ITO layer are to form ohmic contact, then evaporation one metal reflecting electrode layer on described ITO layer surface, between ITO layer and metal reflecting electrode layer, to form an optics diffuse reflector, by a metal bonding electrode layer described metal reflecting electrode layer is bonded on the conductive support substrate at last;
Step 3, peel off described sapphire pattern substrate, to form a micron order micro-structural that has with this Sapphire Substrate surfacial pattern complementation on described N-type GaN layer surface, clean described N-type GaN layer surface, to remove metal Ga and oxide on surface, then corrode the micron order micro-structural on described N-type GaN layer surface, to form a large amount of nano level pyramid bulge-structures at described micron order micro-structure surface, at last prepare the N-type electrode on the surface of described N-type GaN layer, to finish the preparation of described LED.
In the described step 1, by wet etching or the described Sapphire Substrate of dry etching etching one surface to prepare described sapphire pattern substrate.
Preferably, in the described step 2, process ITO layer surface by dry etching roughening process or wet etching roughening process, to form in its surface nano level rough grain.
In the described step 2, adopt Cl 2, BCl 3With CF 4Mixture or CH 4With the Ar mixture be that corrosive agent carries out the dry etching roughening treatment to described ITO layer surface.
As preferred version of the present invention, in the described step 2, dry etching also is included in described ITO layer surface spin coating photoresist step, to utilize the surface undulation that the photoresist heat accumulation causes in the etching process to form from the alligatoring figure, and it is surperficial to pass to described ITO layer by etching, to form nano level rough grain on ITO layer surface.
In the described step 2, adopting BOE and HF mixed solution is that corrosive agent carries out the wet etching roughening treatment to described ITO layer surface.
In the described step 3, adopt laser lift-off technique to peel off described sapphire pattern substrate, comprise that to form on described N-type GaN layer surface a micron order micro-structural low level zone, that is in low level is in the micron order micro-structural that the high-order zone of high-order micron order micro-structural and is in the micron order micro-structural meta zone between the described high-low position zone.
In the described step 3, adopt acid solution etch or aqueous slkali etch to corrode described N-type GaN layer micron order micro-structural high-low position zone, to form a large amount of nano level pyramid bulge-structures on its surface.
In the described step 3, described acid solution is phosphoric acid, and described aqueous slkali is potassium hydroxide.
In the described step 3, corrosion is aided with UV-irradiation or heating simultaneously, is beneficial to the carrying out of corroding.
As mentioned above, the LED that makes via preparation method of the present invention, have that shift by the laser lift-off sapphire pattern substrate and the light output surface micro-structural complementation of sapphire pattern substrate surface micro-structure, because the sapphire pattern substrate surface micromorphology can be controlled by process means, therefore the means of the high control light output surface micro-structural of a kind of repeatability are provided, in addition light output surface is aided with the nano level alligatoring of regional area, has further optimized the pattern of light output surface; Simultaneously, traditional handicraft is prepared the metal diffuse reflector that mirror metal reflector among the LED becomes the nanoscale rough grain, strengthen its diffuse reflection and dispersion effect, made reflector and light output surface micro-structural collocation optimization, increased to greatest extent the extraction efficiency of described LED interior lights.Preparation method's technique of the present invention is simple, can be used for large-scale industrial production.
Description of drawings
Structural representation after the step 1 that Fig. 1 is shown as preparation method of the present invention is finished.
Fig. 2 a～2d is shown as the structural representation that wet etching ITO layer presents in the preparation method's of the present invention step 2.
Fig. 3 a～3g is shown as the structural representation that dry etching ITO layer presents in preparation method's step 2 of the present invention.
Fig. 4 a～4c is shown as and finishes the structural representation that step 3 of the present invention presents.
Embodiment
Below by specific instantiation explanation embodiments of the present invention, those skilled in the art can understand other advantages of the present invention and effect easily by content disclosed in the present specification.The present invention can also be implemented or be used by other different embodiment, and the every details in this specification also can be based on different viewpoints and application, carries out various modifications or change under the spirit of the present invention not deviating from.
Notice, the appended graphic structure that illustrates of this specification, ratio, size etc., equal contents in order to cooperate specification to disclose only, understand and reading for person skilled in the art scholar, be not to limit the enforceable qualifications of the present invention, therefore the technical essential meaning of tool not, the adjustment of the modification of any structure, the change of proportionate relationship or size, not affecting under the effect that the present invention can produce and the purpose that can reach, all should still drop on disclosed technology contents and get in the scope that can contain.Simultaneously, that quotes in this specification reaches the term of " " etc. such as " upper surface ", " lower surface ", " left side ", " right side ", " centre ", " two ", also only for ease of understanding of narrating, but not in order to limit the enforceable scope of the present invention, the change of its relativeness or adjustment, under without essence change technology contents, when also being considered as the enforceable category of the present invention.
The invention provides a kind of high-power GaN based vertical structure LED that light extracts micro-structural that has, see also Fig. 4 b and Fig. 4 c, as shown in the figure, described LED comprises at least: polycrystalline substance layer 2, comprise a conductive support substrate 25, this substrate material can be silicon, copper, aluminium, or all kinds of alloys etc., be bonded to the metal bonding electrode layer 24 of described conductive support substrate 25 upper surfaces, as preferred version, material can be gold-tin alloy, titanium-aluminium alloy etc., be incorporated into the metal reflecting electrode layer 23 of the upper surface of described metal bonding electrode layer 24, material can be silver etc., and has an ITO layer 21 that a upper surface and has the lower surface of nano level rough grain, and described lower surface is incorporated into the upper surface of described metal reflecting electrode layer 23 to form an optics diffuse reflector 22, produce diffuse reflection or scattering in order to the light to this optics diffuse reflector 22 of directive, increase light at the exit probability at light output surface place; Epitaxial structure layer 1, be incorporated into the upper surface of described ITO layer 21, comprise P type GaN layer 14, be incorporated into the active region layer 13 on the described P type GaN layer 14, and be incorporated into N-type GaN layer 12 on the described active region layer 13, and the upper surface of described N-type GaN layer 12 has bright dipping micro-structural 15 and N electrode 4, and the material of this electrode can be gold or silver etc.; And SiO 2Passivation layer 3, be formed at described epitaxial structure layer 1 around the side.
Of particular note, described bright dipping micro-structural 15 is included in upper surface the micron order micro-structural that forms and the nanoscale micro-structural that forms at described micron order micro-structure surface of N-type GaN layer, this two micro-structurals acting in conjunction, reduce the total reflection probability of the light of this exiting surface of directive, improved greatly the light extraction efficiency of LED of the present invention.
Described micron order micro-structural is to have bullet tapered protrusion structure, triangular taper bulge-structure, truncation triangular pyramid bulge-structure or the truncation triangular pyramid sunk structure that certain intervals is arranged.
Described micron order micro-structural comprises that a micron order micro-structural low level zone 153, that is in low level is in the high-order zone of high-order micron order the micro-structural 151 and one micron order micro-structural zone line 152 that is between the described high-low position zone.
Described nanoscale micro-structural is a large amount of nanoscale pyramid bulge- structures 154 and 155 that are formed at 151 and 153 surfaces, described micron order micro-structural high-low position zone.
See also Fig. 1 to Fig. 4 c, be shown as the LED cross section structure schematic diagram that presents according to each step among the preparation method of the present invention.As shown in the figure, the present invention also provides a kind of preparation method that light extracts the high-power GaN based vertical structure LED of micro-structural that has, and described preparation method may further comprise the steps at least:
See also Fig. 1, as shown in the figure, at first carry out step 1, one Sapphire Substrate is provided, and be etched in its upper surface by wet etching or dry etching and etch required figure, the sapphire pattern substrate 11 that has special pattern to prepare a upper surface, then on described sapphire pattern substrate 11, grow successively N-type GaN layer 12, active region layer 13 and P type GaN layer 14 to form epitaxial structure, a preferred version as the present embodiment is: provide a sapphire pattern substrate 11, then with (CH 3) 3Ga (trimethyl gallium) is Ga (gallium) source, NH 3(ammonia) is the N source, SiH 4(silane) is used as the N-type dopant, adopts the metallo-organic compound CVD (Chemical Vapor Deposition) method at described sapphire pattern substrate 11 growth N-type GaN layers 12; With (CH 3) 3In (trimethyl indium) is In (indium) source, (CH 3) 3Ga is the Ga source, NH 3Be the N source, adopt metallo-organic compound CVD (Chemical Vapor Deposition) method growing InGaN/GaN active layer 13 on described N-type GaN layer 12; (CH 3) 3Ga is the Ga source, NH 3Be the N source, Mg (C 5H 5) 2(two luxuriant magnesium) as P type dopant, adopts metallo-organic compound CVD (Chemical Vapor Deposition) method growth P-type GaN layer 14 on described active layer 13 and to form SiO on the surface of described epitaxial structure layer 1 by mode of oxidizing forming epitaxial structure layer 1 2Passivation layer 3;
See also Fig. 2 a～3g, as shown in the figure, then carry out step 2, evaporation goes out ITO layer 21 on described P type GaN layer 14, and the surface by the described ITO layer 21 of etching technics alligatoring, to form nano level rough grain on this surface, fusion P type GaN layer 14 and ITO layer 21, to form ohmic contact, then evaporation one metal reflecting electrode layer 23 on described ITO layer 21 surface, the material of this metal reflecting electrode layer 23 can be silver etc., between ITO layer 21 and metal reflecting electrode layer 23, to form an optics diffuse reflector 22, produce diffuse reflection or scattering in order to the light to this optics diffuse reflector of directive, increase light at the exit probability at light output surface place, at last by a metal bonding electrode layer 24, the material of this metal bonding electrode layer 24 can be gold-tin alloy, titanium-aluminium alloy etc., described metal reflecting electrode layer 23 is bonded on the conductive support substrate 25, and the material of this conductive support substrate 25 can be silicon, copper, aluminium, or all kinds of alloys etc., to prepare the polycrystalline substance layer 2 of described LED;
Wherein, in the described step 2, process ITO layer 21 surface by dry etching roughening process or wet etching roughening process, to form in its surface nano level rough grain.
Shown in Fig. 2 a～2d, in the described step 2, adopting BOE and HF mixed solution is that corrosive agent carries out the wet etching roughening treatment to described ITO layer 21 surface.
Shown in Fig. 3 a～3g, in the described step 2, adopt Cl 2, BCl 3With CF 4Mixture or CH 4With the Ar mixture be that corrosive agent carries out the dry etching roughening treatment to described ITO layer 21 surface.As preferred version of the present invention, in the described step 2, dry etching also is included in described ITO layer 21 surperficial spin coating photoresist 26 step, to utilize the surface undulation that photoresist 26 heat accumulations cause in the etching process to form from alligatoring figure 27, and pass to described ITO layer 21 surface by etching, to form the nano level rough grain on ITO layer 21 surface.
See also Fig. 4 a～4c, as shown in the figure, carry out at last step 3, adopt laser lift-off technique to peel off described sapphire pattern substrate 11, to form a micron order micro-structural that has with the 11 surfacial pattern complementations of this sapphire pattern substrate on described N-type GaN layer 12 surface, this micron order micro-structural comprises that one is in the micron order micro-structural low level zone 153 of low level, one is in the high-order zone 151 and of high-order micron order micro-structural is in described height, micron order micro-structural meta zone 152 between the low level zone, clean described N-type GaN layer 12 surface, to remove metal Ga and oxide on surface, preferably, select the HCl of 1: 1 ratio: H 2O solution clean metal Ga, select BOE to remove oxide on surface, then corrode the micron order micro-structural 151 on described N-type GaN layer 12 surface by acid solution or aqueous slkali, 152 and 153, form a large amount of nano level pyramid bulge- structures 154 and 155 with high- order zone 151 and 153 surfaces, low level zone in described micron order micro-structural, preferably, described acid solution is phosphoric acid, described aqueous slkali is potassium hydroxide, a preferred version in corrosion process is, corrosion is aided with UV-irradiation or heating simultaneously, ultraviolet light described herein can be Xe light, be beneficial to the carrying out of corroding, at last prepare N-type electrode 4 on the surface of described N-type GaN layer 12, the material of this electrode can be gold or silver etc., to finish the preparation of described LED.
Technique of the present invention is simple but effect is good, the LED that makes via preparation method of the present invention, have that shift by the laser lift-off sapphire pattern substrate and the light output surface micro-structural complementation of sapphire pattern substrate surface micro-structure, because the sapphire pattern substrate surface micromorphology can be controlled by process means, therefore the means of the high control light output surface micro-structural of a kind of repeatability are provided, in addition light output surface is aided with the nano level alligatoring of regional area, has further optimized the pattern of light output surface; Simultaneously, traditional handicraft is prepared the metal diffuse reflector that mirror metal reflector among the LED becomes the nanoscale rough grain, strengthen its diffuse reflection and dispersion effect, made reflector and light output surface micro-structural collocation optimization, increased to greatest extent the extraction efficiency of described LED interior lights.Preparation method's technique of the present invention is simple, can be used for large-scale industrial production.
Although disclose for the purpose of illustration specific embodiments of the invention and accompanying drawing, its purpose only is to help to understand content of the present invention and implement according to this, but it will be appreciated by those skilled in the art that: without departing from the spirit and scope of the invention and the appended claims, various replacements, variation and modification all are possible.Therefore, the present invention should not be limited to each embodiment and the disclosed content of accompanying drawing, and the scope of protection of present invention is as the criterion with the scope that claims define.

Claims (15)

1. one kind has the high-power GaN based vertical structure LED that light extracts micro-structural, it is characterized in that, described LED comprises at least:
The polycrystalline substance layer, comprise a conductive support substrate, be bonded to the metal bonding electrode layer of described conductive support substrate upper surface, be incorporated into the metal reflecting electrode layer of described metal bonding electrode layer upper surface, and have the ITO layer that a upper surface and has the lower surface of nanoscale rough grain, and the lower surface of described ITO layer is incorporated into the upper surface of described metal reflecting electrode layer to form an optics diffuse reflector;
The epitaxial structure layer is incorporated into the upper surface of described ITO layer, comprises P type GaN layer, be incorporated into the active region layer on the described P type GaN layer, and be incorporated into the N-type GaN layer on the described active region layer, and the upper surface of described N-type GaN layer has bright dipping micro-structural and N electrode; And
SiO 2Passivation layer, be formed at described epitaxial structure layer around the side.
2. according to claim 1 have a high-power GaN based vertical structure LED that light extracts micro-structural, it is characterized in that, described bright dipping micro-structural is included in upper surface the micron order micro-structural that forms and the nanoscale micro-structural that forms at described micron order micro-structure surface of N-type GaN layer.
3. according to claim 2 have a high-power GaN based vertical structure LED that light extracts micro-structural, it is characterized in that, described micron order micro-structural is to have bullet tapered protrusion structure, triangular taper bulge-structure, truncation triangular pyramid bulge-structure or the truncation triangular pyramid sunk structure that certain intervals is arranged.
4. according to claim 2 have a high-power GaN based vertical structure LED that light extracts micro-structural, it is characterized in that, described micron order micro-structural comprises that a micron order micro-structural low level zone, that is in low level is in the high-order zone of high-order micron order micro-structural and a micron order micro-structural zone line that is between the described high-low position zone.
5. the high-power GaN based vertical structure LED with light extraction micro-structural according to claim 4 is characterized in that, described nanoscale micro-structural is a large amount of nanoscale pyramid bulge-structures that are formed at described micron order micro-structural high-low position region surface.
6. one kind has the preparation method that light extracts the high-power GaN based vertical structure LED of micro-structural, it is characterized in that, may further comprise the steps at least:
Step 1, one Sapphire Substrate is provided, and surface etch goes out required figure thereon, the sapphire pattern substrate that has special pattern to prepare a upper surface, then on described sapphire pattern substrate, grow successively N-type GaN layer, active region layer and P type GaN layer with formation epitaxial structure layer, and form SiO on the surface of described sapphire pattern substrate and epitaxial structure layer 2Passivation layer;
Step 2, evaporation goes out the ITO layer on described P type GaN layer, and the surface by the described ITO layer of etching technics alligatoring, to form nano level rough grain on this surface, fusion P type GaN layer and ITO layer are to form ohmic contact, then evaporation one metal reflecting electrode layer on described ITO layer surface, between ITO layer and metal reflecting electrode layer, to form an optics diffuse reflector, by a metal bonding electrode layer described metal reflecting electrode layer is bonded on the conductive support substrate at last;
Step 3, peel off described sapphire pattern substrate, to form a micron order micro-structural that has with this Sapphire Substrate surfacial pattern complementation on described N-type GaN layer surface, clean described N-type GaN layer surface, to remove metal Ga and oxide on surface, then corrode the micron order micro-structural on described N-type GaN layer surface, to form a large amount of nano level pyramid bulge-structures at described micron order micro-structure surface, at last prepare the N-type electrode on the surface of described N-type GaN layer, to finish the preparation of described LED.
7. according to claim 6 have a preparation method that light extracts the high-power GaN based vertical structure LED of micro-structural, it is characterized in that, in described step 1, by wet etching or the described Sapphire Substrate of dry etching etching one surface to prepare described sapphire pattern substrate.
8. according to claim 6 have a preparation method that light extracts the high-power GaN based vertical structure LED of micro-structural, it is characterized in that, in described step 2, process ITO layer surface by dry etching roughening process or wet etching roughening process, to form in its surface nano level rough grain.
9. the preparation method with high-power GaN based vertical structure LED of light extraction micro-structural according to claim 8 is characterized in that, in described step 2, adopts Cl 2, BCl 3With CF 4Mixture or CH 4With the Ar mixture be that corrosive agent carries out the dry etching roughening treatment to described ITO layer surface.
10. according to claim 8 have a preparation method that light extracts the high-power GaN based vertical structure LED of micro-structural, it is characterized in that, in described step 2, dry etching also is included in described ITO layer surface spin coating photoresist step, to utilize the surface undulation that the photoresist heat accumulation causes in the etching process to form from the alligatoring figure, and it is surperficial to pass to described ITO layer by etching, to form nano level rough grain on ITO layer surface.
11. the preparation method with high-power GaN based vertical structure LED of light extraction micro-structural according to claim 8, it is characterized in that, in described step 2, adopting BOE and HF mixed solution is that corrosive agent carries out the wet etching roughening treatment to described ITO layer surface.
12. the preparation method with high-power GaN based vertical structure LED of light extraction micro-structural according to claim 6, it is characterized in that, in described step 3, adopt laser lift-off technique to peel off described sapphire pattern substrate, comprise that to form on described N-type GaN layer surface a micron order micro-structural low level zone, that is in low level is in the micron order micro-structural that the high-order zone of high-order micron order micro-structural and is in the micron order micro-structural meta zone between the described high-low position zone.
13. the preparation method with high-power GaN based vertical structure LED of light extraction micro-structural according to claim 12, it is characterized in that, in described step 3, adopt acid solution etch or aqueous slkali etch to corrode the high-low position zone of described N-type GaN layer micron order micro-structural, to form a large amount of nano level pyramid bulge-structures on its surface.
14. the preparation method with high-power GaN based vertical structure LED of light extraction micro-structural according to claim 13 is characterized in that in described step 3, described acid solution is phosphoric acid, described aqueous slkali is potassium hydroxide.
15. the preparation method with high-power GaN based vertical structure LED of light extraction micro-structural according to claim 13 is characterized in that in described step 3, corrosion is aided with UV-irradiation or heating simultaneously, is beneficial to the carrying out of corroding.
CN2011102796905A 2011-09-20 2011-09-20 High-power GaN-based vertical structure LED with light extraction microstructure and preparation method thereof Pending CN103022301A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2011102796905A CN103022301A (en) 2011-09-20 2011-09-20 High-power GaN-based vertical structure LED with light extraction microstructure and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2011102796905A CN103022301A (en) 2011-09-20 2011-09-20 High-power GaN-based vertical structure LED with light extraction microstructure and preparation method thereof

Publications (1)

Publication Number Publication Date
CN103022301A true CN103022301A (en) 2013-04-03

Family

ID=47970654

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011102796905A Pending CN103022301A (en) 2011-09-20 2011-09-20 High-power GaN-based vertical structure LED with light extraction microstructure and preparation method thereof

Country Status (1)

Country Link
CN (1) CN103022301A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103594567A (en) * 2013-10-21 2014-02-19 溧阳市东大技术转移中心有限公司 Method for manufacturing high-light-emitting-efficiency vertical type light-emitting diode
CN103606601A (en) * 2013-10-21 2014-02-26 溧阳市东大技术转移中心有限公司 Manufacturing method of step type light-emitting diode
CN103606608A (en) * 2013-10-21 2014-02-26 溧阳市东大技术转移中心有限公司 Vertical type light emitting diode with high light-emitting efficiency
CN103606611A (en) * 2013-10-26 2014-02-26 溧阳市东大技术转移中心有限公司 Vertical light emitting diode with high light extraction efficiency
CN104183714A (en) * 2013-05-22 2014-12-03 海洋王照明科技股份有限公司 Organic light emission diode and preparation method thereof, display screen and terminal
CN105047778A (en) * 2015-08-11 2015-11-11 厦门市三安光电科技有限公司 Preparation method for thin-film gallium-nitride-based LED (light emitting diode)
WO2016041471A1 (en) * 2014-09-15 2016-03-24 映瑞光电科技(上海)有限公司 Led vertical chip structure with special coarsening morphology and preparation method therefor
CN106972084A (en) * 2017-03-01 2017-07-21 盐城东紫光电科技有限公司 Method for preparing UV LED chip
CN109713089A (en) * 2018-12-28 2019-05-03 映瑞光电科技(上海)有限公司 GaN base LED white light thin-film LED and preparation method thereof
CN113363360A (en) * 2021-05-21 2021-09-07 厦门士兰明镓化合物半导体有限公司 LED chip with vertical structure and manufacturing method thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101599523A (en) * 2009-06-01 2009-12-09 广东昭信光电科技有限公司 The light emitting diode (LED) chip with vertical structure and the manufacture method thereof that adopt conducting polymer to shift
US20110101400A1 (en) * 2005-01-11 2011-05-05 Chen-Fu Chu Light emitting diodes (leds) with improved light extraction by roughening
CN102054917A (en) * 2009-10-28 2011-05-11 Lg伊诺特有限公司 Light emitting device and light emitting device package
CN102117869A (en) * 2011-01-21 2011-07-06 厦门市三安光电科技有限公司 Method for stripping substrate of LED
US20110210359A1 (en) * 2010-04-28 2011-09-01 Kyung Wook Park Light emitting device, method of manufacturing the light emitting device, light emitting device package, and lighting unit
US20110220933A1 (en) * 2010-03-09 2011-09-15 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method of fabricating semiconductor light emitting device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110101400A1 (en) * 2005-01-11 2011-05-05 Chen-Fu Chu Light emitting diodes (leds) with improved light extraction by roughening
CN101599523A (en) * 2009-06-01 2009-12-09 广东昭信光电科技有限公司 The light emitting diode (LED) chip with vertical structure and the manufacture method thereof that adopt conducting polymer to shift
CN102054917A (en) * 2009-10-28 2011-05-11 Lg伊诺特有限公司 Light emitting device and light emitting device package
US20110220933A1 (en) * 2010-03-09 2011-09-15 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method of fabricating semiconductor light emitting device
US20110210359A1 (en) * 2010-04-28 2011-09-01 Kyung Wook Park Light emitting device, method of manufacturing the light emitting device, light emitting device package, and lighting unit
CN102117869A (en) * 2011-01-21 2011-07-06 厦门市三安光电科技有限公司 Method for stripping substrate of LED

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104183714A (en) * 2013-05-22 2014-12-03 海洋王照明科技股份有限公司 Organic light emission diode and preparation method thereof, display screen and terminal
CN103594567B (en) * 2013-10-21 2016-06-08 溧阳市东大技术转移中心有限公司 The manufacture method of the vertical type light emitting diode of a kind of high light-emitting efficiency
CN103594567A (en) * 2013-10-21 2014-02-19 溧阳市东大技术转移中心有限公司 Method for manufacturing high-light-emitting-efficiency vertical type light-emitting diode
CN103606601B (en) * 2013-10-21 2016-08-24 溧阳市东大技术转移中心有限公司 A kind of manufacture method of stepped ramp type light emitting diode
CN103606601A (en) * 2013-10-21 2014-02-26 溧阳市东大技术转移中心有限公司 Manufacturing method of step type light-emitting diode
CN103606608A (en) * 2013-10-21 2014-02-26 溧阳市东大技术转移中心有限公司 Vertical type light emitting diode with high light-emitting efficiency
CN103606611B (en) * 2013-10-26 2016-04-27 溧阳市东大技术转移中心有限公司 A kind of vertical type light emitting diode of high light-emitting efficiency
CN103606611A (en) * 2013-10-26 2014-02-26 溧阳市东大技术转移中心有限公司 Vertical light emitting diode with high light extraction efficiency
GB2547123B (en) * 2014-09-15 2020-05-27 Enraytek Optoelectronics Co LED vertical chip structure with special coarsening morphology and preparation method therefor
WO2016041471A1 (en) * 2014-09-15 2016-03-24 映瑞光电科技(上海)有限公司 Led vertical chip structure with special coarsening morphology and preparation method therefor
GB2547123A (en) * 2014-09-15 2017-08-09 Enraytek Optoelectronics Co LED vertical chip structure with special coarsening morphology and preparation method therefor
CN105047778A (en) * 2015-08-11 2015-11-11 厦门市三安光电科技有限公司 Preparation method for thin-film gallium-nitride-based LED (light emitting diode)
CN105047778B (en) * 2015-08-11 2018-11-20 厦门市三安光电科技有限公司 A kind of preparation method of film gallium nitride-based light
CN106972084B (en) * 2017-03-01 2018-10-19 盐城东紫光电科技有限公司 The method for being used to prepare UV LED chip
CN106972084A (en) * 2017-03-01 2017-07-21 盐城东紫光电科技有限公司 Method for preparing UV LED chip
CN109713089A (en) * 2018-12-28 2019-05-03 映瑞光电科技(上海)有限公司 GaN base LED white light thin-film LED and preparation method thereof
CN113363360A (en) * 2021-05-21 2021-09-07 厦门士兰明镓化合物半导体有限公司 LED chip with vertical structure and manufacturing method thereof
CN113363360B (en) * 2021-05-21 2022-09-09 厦门士兰明镓化合物半导体有限公司 LED chip with vertical structure and manufacturing method thereof

Similar Documents

Publication Publication Date Title
CN103022301A (en) High-power GaN-based vertical structure LED with light extraction microstructure and preparation method thereof
CN102157640B (en) Method for manufacturing gallium nitride (GaN)-based light-emitting diode (LED) chip with p-GaN layer subjected to surface roughening
CN100563037C (en) A kind of light-emitting diode chip for backlight unit and manufacture method thereof
CN100524865C (en) Method for preparing GaN-based LED with photon crystal structure
CN102709410A (en) Method for manufacturing nanometer column LED (Light Emitting Diode)
CN103187499B (en) Light-emitting Diode And Its Making Method
CN102709426A (en) Manufacture method of GaN (gallium nitride)-based LED (light emitting diode) chip with roughened surface
CN101604718A (en) A kind of laterally inclined light-emitting diode chip for backlight unit and preparation method thereof
CN102723417B (en) Light-emitting diode (LED) chip convenient to route and preparation method thereof
CN102263173A (en) Light-emitting diode and manufacturing method thereof
CN104218134B (en) LED (Light Emitting Diode) vertical chip structure with special coarsening morphology and preparation method thereof
WO2023137814A1 (en) Method for manufacturing high-voltage led chip
CN100464437C (en) Method for improving luminance brightness of chip at the axial direction
CN105047777A (en) Light-emitting diode (LED) vertical chip structure with coarsened side wall and fabrication method of LED vertical chip structure
CN103700749A (en) Light-emitting diode and manufacturing method thereof
CN102751417B (en) LED (light-emitting diode) tube core with ZnO (zinc oxide)-micron graphic array and preparation method thereof
CN107026226A (en) Vertical LED chip structure with reflecting effect Cutting Road and preparation method thereof
CN107123705B (en) Preparation method of light-emitting diode
CN102790153B (en) Manufacturing method for GaN-based LED (Light Emitting Diode) chip for coarsening p-GaN layer nanometer bowl-shaped surface
CN103137810B (en) A kind of GaN base light-emitting diode chip for backlight unit utilizing twice scribing to prepare and preparation method thereof
CN102544269A (en) Manufacturing method for LED chip with micro-cylinder lens array patterns on side wall
CN102820389A (en) ELO (epitaxial lift-off) technology-based light emitting diode with inversed structure and preparation method thereof
CN201149873Y (en) High power light-emitting diode chip capable of improving quantum efficiency
CN106449929A (en) A preparation technology method raising the light emitting efficiency of an LED chip
CN106784187A (en) A kind of process of preparing for improving LED chip light extraction efficiency

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
AD01 Patent right deemed abandoned

Effective date of abandoning: 20161019

C20 Patent right or utility model deemed to be abandoned or is abandoned