CN103606611B - A kind of vertical type light emitting diode of high light-emitting efficiency - Google Patents
A kind of vertical type light emitting diode of high light-emitting efficiency Download PDFInfo
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- CN103606611B CN103606611B CN201310514113.9A CN201310514113A CN103606611B CN 103606611 B CN103606611 B CN 103606611B CN 201310514113 A CN201310514113 A CN 201310514113A CN 103606611 B CN103606611 B CN 103606611B
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- 239000004065 semiconductor Substances 0.000 claims abstract description 32
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 229910002704 AlGaN Inorganic materials 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000000605 extraction Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 150000002736 metal compounds Chemical class 0.000 description 3
- 229910001092 metal group alloy Inorganic materials 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910001000 nickel titanium Inorganic materials 0.000 description 3
- HLXZNVUGXRDIFK-UHFFFAOYSA-N nickel titanium Chemical compound [Ti].[Ti].[Ti].[Ti].[Ti].[Ti].[Ti].[Ti].[Ti].[Ti].[Ti].[Ni].[Ni].[Ni].[Ni].[Ni].[Ni].[Ni].[Ni].[Ni].[Ni].[Ni].[Ni].[Ni].[Ni] HLXZNVUGXRDIFK-UHFFFAOYSA-N 0.000 description 3
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention discloses a kind of vertical type light emitting diode, described light-emitting diode has hearth electrode, hearth electrode has hemispheric first end transparency conducting layer, between the semispherical surface and hemisphere first end transparency conducting layer of the first end transparency conducting layer, there is end roughened layer, at the upper surface of end roughened layer, there is the second end transparency conducting layer; Second end layer at transparent layer have p-type semiconductor layer, semiconductor light emitting layer and n-type semiconductor layer successively; There is hemispheric first top transparency conducting layer on the n-type semiconductor layer; Push up between transparency conducting layer at the first top semispherical surface of transparency conducting layer and hemisphere first and there is top roughened layer; At the upper surface of top roughened layer, there is the second top transparency conducting layer; The surface of the second top transparency conducting layer has top electrode.
Description
Technical field
The invention belongs to technical field of semiconductors, particularly a kind of vertical type light emitting diode of high light-emitting efficiency.
Background technology
Semiconductor light-emitting-diode (LightEmittingDiode) is applied increasingly extensive, in illumination, particularly have the trend replacing incandescent lamp and fluorescent lamp.Light-emitting diode is the light-emitting component made by semi-conducting material, element has two electrode terminals, between terminal, apply voltage, passes into minimum electric current, dump energy can excite and disengage by combination via electronics electricity hole in the form of light, and this is the basic principle of luminosity of light-emitting diode.Light-emitting diode is different from general incandescent lamp bulb, light-emitting diode belongs to chemiluminescence, have that power consumption is low, component life is long, the lamp time need not be warmed up and the advantage such as reaction speed is fast, add that its volume is little, vibration resistance, be applicable to volume production, demand in easy fit applications makes element that is minimum or array, current light-emitting diode is generally used in information, the indicating device of communication and consumption electronic products and display unit, becomes critical elements indispensable in daily life.
Current light-emitting diode also faces some technical problems, and particularly light extraction efficiency is lower.Which results in the defects such as the luminance shortage of light-emitting diode.For the problems referred to above, propose in the industry the problem being improved light-emitting diode light extraction efficiency by method of roughening, but method of roughening still existing defects in prior art, such as only horizontal planar field alligatoring is carried out to light-emitting diode, this alligatoring mode cannot improve alligatoring area further, and therefore light extraction efficiency cannot improve further.
Summary of the invention
The present invention is directed to the problem of prior art, propose a kind of vertical type light emitting diode of high light-emitting efficiency, by increasing alligatoring area, thus improving the light extraction efficiency of light-emitting diode.
First to of the present invention " on ", D score defines, in the present invention, by referring to accompanying drawing, of the present invention " on " in accompanying drawing towards direction vertically upward during accompanying drawing.D score of the present invention is that " thickness " as herein described refers to towards the distance in vertical direction during accompanying drawing, and " width " as herein described refers to towards the distance in horizontal direction during accompanying drawing towards direction vertically downward during accompanying drawing in accompanying drawing.
The structure of the vertical type light emitting diode of the high light-emitting efficiency that the present invention proposes is:
Hearth electrode has hemispheric first end transparency conducting layer, between the semispherical surface and hemisphere first end transparency conducting layer of the first end transparency conducting layer, there is end roughened layer, at the upper surface of end roughened layer, there is the second end transparency conducting layer; Second end layer at transparent layer have p-type semiconductor layer, semiconductor light emitting layer and n-type semiconductor layer successively; There is hemispheric first top transparency conducting layer on the n-type semiconductor layer; Push up between transparency conducting layer at the first top semispherical surface of transparency conducting layer and hemisphere first and there is top roughened layer; At the upper surface of top roughened layer, there is the second top transparency conducting layer; The surface of the second top transparency conducting layer has top electrode;
Wherein, described hearth electrode and top electrode are the metal material that heat conductivility is good, such as but not limited to: gold, silver, copper, aluminium, nickel, titanium, cobalt, palladium or platinum, or also can adopt metal alloy to be formed, such as but not limited to: plation, aerdentalloy, nickel alumin(i)um alloy, Nitinol etc.
Wherein, first end transparency conducting layer, the second end transparency conducting layer, the first top transparency conducting layer and the second top transparency conducting layer are the metal compound material that electric conductivity is good, such as but not limited to: ZnO, NiO, MgO, In2O3, TiO2 or ITO; From cross section, the spherical justified margin of described hemispheric first end transparent electrode layer and hemispheric first top transparent electrode layer;
Further, p-type semiconductor layer is p-type GaN layer or p-type AlGaN layer, and n-type semiconductor layer is n-type GaN layer or N-shaped AlGaN layer, and semiconductor light emitting layer is the Al of the superlattice structure alternately formed
xin
yga
zn/AI
xin
yga
zp multiple quantum well layer, wherein x+y+z=1 and 0<x≤0.05,0<y≤0.05,0<z≤0.9;
Further, end roughened layer and top roughened layer are ITO layer, the region surface of end roughened layer uniform fold between the semispherical surface and hemispheric first end transparency conducting layer of the first end transparent electrode layer; Same, the region surface of top roughened layer uniform fold between the semispherical surface and hemispheric first top transparency conducting layer of the first top transparent electrode layer; And end roughened layer is identical with the thickness of top roughened layer, is all 60-70nm;
Further, the radius of hemispheric first end transparency conducting layer is 6-9 micron, and the interhemispheric spacing of the first end transparency conducting layer two is 2-3 micron; Same, the radius of hemispheric first top transparency conducting layer is 6-9 micron, and the first top transparency conducting layer two interhemispheric spacing are 2-3 micron;
Further, the spacing between the lower surface of the first end transparency conducting layer and the upper surface of the second end transparency conducting layer is 10-12 micron; Same, the spacing between the upper surface that the lower surface and second of the first top transparency conducting layer pushes up transparency conducting layer is 10-12 micron.
Accompanying drawing explanation
Fig. 1 is the light emitting diode construction schematic diagram that the present invention proposes.
Embodiment
Embodiment 1
See Fig. 1,
The structure of the vertical type light emitting diode of the high light-emitting efficiency that the present invention proposes is:
Hearth electrode 1 has hemispheric first end transparency conducting layer 21, between the semispherical surface and hemisphere first end transparency conducting layer of the first end transparency conducting layer 21, there is end roughened layer 2, at the upper surface of end roughened layer 2, there is the second end transparency conducting layer 22; At the second end transparency conducting layer 22, there is p-type semiconductor layer 3, semiconductor light emitting layer 4 and n-type semiconductor layer 5 on the surface successively; N-type semiconductor layer 5 has hemispheric first top transparency conducting layer 61; Push up between transparency conducting layer 61 at the first top semispherical surface of transparency conducting layer 61 and hemisphere first and there is top roughened layer 6; At the upper surface of top roughened layer 6, there is the second top transparency conducting layer 62; The surface of the second top transparency conducting layer 62 has top electrode 7;
Wherein, described hearth electrode 1 and top electrode 7 are the metal material that heat conductivility is good, such as but not limited to: gold, silver, copper, aluminium, nickel, titanium, cobalt, palladium or platinum, or also can adopt metal alloy to be formed, such as but not limited to: plation, aerdentalloy, nickel alumin(i)um alloy, Nitinol etc.
Wherein, first end transparency conducting layer 21, second end transparency conducting layer 22, first top transparency conducting layer 61 and the second top transparency conducting layer 62 are the metal compound material that electric conductivity is good, such as but not limited to: ZnO, NiO, MgO, In2O3, TiO2 or ITO; From cross section, the spherical justified margin of described hemispheric first end transparent electrode layer 21 and hemispheric first top transparent electrode layer 61;
Further, p-type semiconductor layer 3 is p-type GaN layer or p-type AlGaN layer, and n-type semiconductor layer 5 is n-type GaN layer or N-shaped AlGaN layer, and semiconductor light emitting layer 4 is the Al of the superlattice structure alternately formed
xin
yga
zn/AI
xin
yga
zp multiple quantum well layer, wherein x+y+z=1 and 0<x≤0.05,0<y≤0.05,0<z≤0.9;
Further, end roughened layer 2 and top roughened layer 6 are ITO layer, the region surface of end roughened layer 2 uniform fold between the semispherical surface and hemispheric first end transparency conducting layer 21 of the first end transparent electrode layer 21; Same, the region surface of top roughened layer 6 uniform fold between the semispherical surface and hemispheric first top transparency conducting layer 61 of the first top transparent electrode layer 61; And end roughened layer 2 is identical with the thickness of top roughened layer 6, is all 60-70nm;
Further, the radius of hemispheric first end transparency conducting layer 21 is 6-9 micron, and the interhemispheric spacing of the first end transparency conducting layer 21 two is 2-3 micron; Same, the radius of hemispheric first top transparency conducting layer 61 is 6-9 micron, and the first top transparency conducting layer 61 two interhemispheric spacing are 2-3 micron;
Further, the spacing between the lower surface of the first end transparency conducting layer 21 and the upper surface of the second end transparency conducting layer 22 is 10-12 micron; Same, the spacing between the upper surface that the lower surface and second of the first top transparency conducting layer 61 pushes up transparency conducting layer 62 is 10-12 micron.
Embodiment 2
Introduce the preferred embodiments of the present invention below.
See Fig. 1, hearth electrode 1 has hemispheric first end transparency conducting layer 21, between the semispherical surface and hemisphere first end transparency conducting layer of the first end transparency conducting layer 21, there is end roughened layer 2, at the upper surface of end roughened layer 2, there is the second end transparency conducting layer 22; At the second end transparency conducting layer 22, there is p-type semiconductor layer 3, semiconductor light emitting layer 4 and n-type semiconductor layer 5 on the surface successively; N-type semiconductor layer 5 has hemispheric first top transparency conducting layer 61; Push up between transparency conducting layer 61 at the first top semispherical surface of transparency conducting layer 61 and hemisphere first and there is top roughened layer 6; At the upper surface of top roughened layer 6, there is the second top transparency conducting layer 62; The surface of the second top transparency conducting layer 62 has top electrode 7;
Wherein, described hearth electrode 1 and top electrode 7 are the metal material that heat conductivility is good, such as but not limited to: gold, silver, copper, aluminium, nickel, titanium, cobalt, palladium or platinum, or also can adopt metal alloy to be formed, such as but not limited to: plation, aerdentalloy, nickel alumin(i)um alloy, Nitinol etc.
Wherein, first end transparency conducting layer 21, second end transparency conducting layer 22, first top transparency conducting layer 61 and the second top transparency conducting layer 62 are the metal compound material that electric conductivity is good, such as but not limited to: ZnO, NiO, MgO, In2O3, TiO2 or ITO; From cross section, the spherical justified margin of described hemispheric first end transparent electrode layer 21 and hemispheric first top transparent electrode layer 61;
Further, p-type semiconductor layer 3 is p-type GaN layer or p-type AlGaN layer, and n-type semiconductor layer 5 is n-type GaN layer or N-shaped AlGaN layer, and semiconductor light emitting layer 4 is the Al of the superlattice structure alternately formed
xin
yga
zn/AI
xin
yga
zp multiple quantum well layer, wherein x=0.045, y=0.055, z=0.9;
Further, end roughened layer 2 and top roughened layer 6 are ITO layer, the region surface of end roughened layer 2 uniform fold between the semispherical surface and hemispheric first end transparency conducting layer 21 of the first end transparent electrode layer 21; Same, the region surface of top roughened layer 6 uniform fold between the semispherical surface and hemispheric first top transparency conducting layer 61 of the first top transparent electrode layer 61; And end roughened layer 2 is identical with the thickness of top roughened layer 6, is all 65nm;
Further, the radius of hemispheric first end transparency conducting layer 21 is 8 microns, and the interhemispheric spacing of the first end transparency conducting layer 21 two is 2.5 microns; Same, the radius of hemispheric first top transparency conducting layer 61 is 8 microns, and the first top transparency conducting layer 61 two interhemispheric spacing are 2.5 microns;
Further, the spacing between the lower surface of the first end transparency conducting layer 21 and the upper surface of the second end transparency conducting layer 22 is 11 microns; Same, the spacing between the upper surface that the lower surface and second of the first top transparency conducting layer 61 pushes up transparency conducting layer 62 is 11 microns.
So far, foregoing description specifically understands light emitting diode construction of the present invention, and relative to existing light-emitting diode, the structure that the present invention proposes can increase substantially luminosity.The embodiment of description is above only the preferred embodiments of the present invention, and it is not intended to limit the present invention.Those skilled in the art, under the prerequisite not departing from spirit of the present invention, can make any amendment, and protection scope of the present invention are limited to the appended claims to the present invention.
Claims (1)
1. a vertical type light emitting diode, is characterized in that:
Described light-emitting diode has hearth electrode, hearth electrode has hemispheric first end transparency conducting layer, between the semispherical surface and hemisphere first end transparency conducting layer of the first end transparency conducting layer, there is end roughened layer, at the upper surface of end roughened layer, there is the second end transparency conducting layer; Second end layer at transparent layer have p-type semiconductor layer, semiconductor light emitting layer and n-type semiconductor layer successively; There is hemispheric first top transparency conducting layer on the n-type semiconductor layer; Push up between transparency conducting layer at the first top semispherical surface of transparency conducting layer and hemisphere first and there is top roughened layer; At the upper surface of top roughened layer, there is the second top transparency conducting layer; The surface of the second top transparency conducting layer has top electrode;
Wherein, from cross section, the spherical justified margin of described hemispheric first end transparent electrode layer and hemispheric first top transparent electrode layer;
Wherein, end roughened layer and top roughened layer are ITO layer, the region surface of end roughened layer uniform fold between the semispherical surface and hemispheric first end transparency conducting layer of the first end transparent electrode layer; Same, the region surface of top roughened layer uniform fold between the semispherical surface and hemispheric first top transparency conducting layer of the first top transparent electrode layer; And end roughened layer is identical with the thickness of top roughened layer, is all 60-70nm;
Wherein, the radius of hemispheric first end transparency conducting layer is 6-9 micron, and the interhemispheric spacing of the first end transparency conducting layer two is 2-3 micron; Same, the radius of hemispheric first top transparency conducting layer is 6-9 micron, and the first top transparency conducting layer two interhemispheric spacing are 2-3 micron;
Further, the spacing between the lower surface of the first end transparency conducting layer and the upper surface of the second end transparency conducting layer is 10-12 micron; Same, the spacing between the upper surface that the lower surface and second of the first top transparency conducting layer pushes up transparency conducting layer is 10-12 micron.
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| CN201310514113.9A CN103606611B (en) | 2013-10-26 | 2013-10-26 | A kind of vertical type light emitting diode of high light-emitting efficiency |
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| CN201310514113.9A CN103606611B (en) | 2013-10-26 | 2013-10-26 | A kind of vertical type light emitting diode of high light-emitting efficiency |
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| CN103606611B true CN103606611B (en) | 2016-04-27 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101355119A (en) * | 2007-07-25 | 2009-01-28 | 中国科学院半导体研究所 | Method for preparing vertical structure LED using whole optical film system |
| CN103022301A (en) * | 2011-09-20 | 2013-04-03 | 上海蓝光科技有限公司 | High-power GaN-based vertical structure LED with light extraction microstructure and preparation method thereof |
| CN103325913A (en) * | 2013-05-27 | 2013-09-25 | 江苏晶瑞半导体有限公司 | Light emitting diode (LED) with composite transparent conducting layer and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009039233A1 (en) * | 2007-09-21 | 2009-03-26 | Bridgelux, Inc. | Light-emitting chip device with high thermal conductivity |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101355119A (en) * | 2007-07-25 | 2009-01-28 | 中国科学院半导体研究所 | Method for preparing vertical structure LED using whole optical film system |
| CN103022301A (en) * | 2011-09-20 | 2013-04-03 | 上海蓝光科技有限公司 | High-power GaN-based vertical structure LED with light extraction microstructure and preparation method thereof |
| CN103325913A (en) * | 2013-05-27 | 2013-09-25 | 江苏晶瑞半导体有限公司 | Light emitting diode (LED) with composite transparent conducting layer and preparation method thereof |
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Effective date of registration: 20170724 Address after: Licheng Town East Street Liyang city 213300 Jiangsu city of Changzhou province No. 182 Patentee after: Liyang Technology Development Center Address before: Li Town of Liyang City, Jiangsu province 213300 Changzhou City Dongmen Street No. 67 Patentee before: LIYANG DONGDA TECHNOLOGY TRANSFER CENTER CO., LTD. |