CN103594581B - A kind of manufacture method of flatbed light-emitting diode - Google Patents
A kind of manufacture method of flatbed light-emitting diode Download PDFInfo
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- CN103594581B CN103594581B CN201310495998.2A CN201310495998A CN103594581B CN 103594581 B CN103594581 B CN 103594581B CN 201310495998 A CN201310495998 A CN 201310495998A CN 103594581 B CN103594581 B CN 103594581B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
Abstract
The invention discloses a kind of manufacture method of flatbed light-emitting diode, in turn include the following steps: (1) forms the first end transparency conducting layer, end roughened layer and the second end transparency conducting layer successively on substrate; (2) on the second end transparency conducting layer, p-type semiconductor layer, semiconductor light emitting layer and n-type semiconductor layer is formed successively; (3) adopt etching technics, the subregion of p-type semiconductor layer, semiconductor light emitting layer and n-type semiconductor layer is removed, till the upper surface exposing the second end transparency conducting layer completely; (4) the first top transparency conducting layer, top roughened layer and the second top transparency conducting layer is formed on the n-type semiconductor layer successively; (5) hearth electrode and top electrode is formed respectively on the upper surface exposed at the second end transparency conducting layer and on the surface of the second top transparency conducting layer.
Description
Technical field
The invention belongs to technical field of semiconductors, particularly a kind of manufacture method of flatbed light-emitting diode of high light-emitting efficiency
Background technology
Semiconductor light-emitting-diode (LightEmittingDiode) is applied increasingly extensive, in illumination, particularly have the trend replacing incandescent lamp and fluorescent lamp.Light-emitting diode is the light-emitting component made by semi-conducting material, element has two electrode terminals, between terminal, apply voltage, passes into minimum electric current, dump energy can excite and disengage by combination via electronics electricity hole in the form of light, and this is the basic principle of luminosity of light-emitting diode.Light-emitting diode is different from general incandescent lamp bulb, light-emitting diode belongs to chemiluminescence, have that power consumption is low, component life is long, the lamp time need not be warmed up and the advantage such as reaction speed is fast, add that its volume is little, vibration resistance, be applicable to volume production, demand in easy fit applications makes element that is minimum or array, current light-emitting diode is generally used in information, the indicating device of communication and consumption electronic products and display unit, becomes critical elements indispensable in daily life.
Current light-emitting diode also faces some technical problems, and particularly light extraction efficiency is lower.Which results in the defects such as the luminance shortage of light-emitting diode.For the problems referred to above, propose in the industry the problem being improved light-emitting diode light extraction efficiency by method of roughening, but method of roughening still existing defects in prior art, such as only horizontal planar field alligatoring is carried out to light-emitting diode, this alligatoring mode cannot improve alligatoring area further, and therefore light extraction efficiency cannot improve further.
Summary of the invention
The present invention is directed to the problem of prior art, propose a kind of manufacture method of flatbed light-emitting diode of high light-emitting efficiency, by increasing alligatoring area, thus improving the light extraction efficiency of light-emitting diode.
First to of the present invention " on ", D score defines, in the present invention, by referring to accompanying drawing, of the present invention " on " in accompanying drawing towards direction vertically upward during accompanying drawing.D score of the present invention is that " thickness " as herein described refers to towards the distance in vertical direction during accompanying drawing, and " width " as herein described refers to towards the distance in horizontal direction during accompanying drawing towards direction vertically downward during accompanying drawing in accompanying drawing.
The manufacture method of the flatbed light-emitting diode of the high light-emitting efficiency that the present invention proposes in turn includes the following steps:
(1) on substrate, form the first end transparency conducting layer, end roughened layer and the second end transparency conducting layer successively;
(2) on the second end transparency conducting layer, p-type semiconductor layer, semiconductor light emitting layer and n-type semiconductor layer is formed successively;
(3) adopt etching technics, the subregion of p-type semiconductor layer, semiconductor light emitting layer and n-type semiconductor layer is removed, till the upper surface exposing the second end transparency conducting layer completely;
(4) the first top transparency conducting layer, top roughened layer and the second top transparency conducting layer is formed on the n-type semiconductor layer successively;
(5) hearth electrode and top electrode is formed respectively on the upper surface exposed at the second end transparency conducting layer and on the surface of the second top transparency conducting layer;
Wherein, the technical process of step (1) is: deposit transparent conductive material on substrate 1, forms column-shaped projection after carrying out photoetching, etching to transparent conductive material; Carry out high-temperature heating to this projection, thus projection melted, the protruding natural shrinking after fusing becomes hemisphere, then after cooling, forms hemispheric first end transparency conducting layer; Then adopt chemical etching technology to form end roughened layer between the spherical surface and the first end transparency conducting layer of the first end transparency conducting layer, then at the upper surface deposit transparent conductive material of end roughened layer, after planarization, obtain the second end transparency conducting layer;
Wherein, in the etching technics of step (3), the subregion of p-type semiconductor layer, semiconductor light emitting layer and n-type semiconductor layer is removed by preferred employing dry etch process (such as plasma etching) in vertical direction, thus p-type semiconductor layer, semiconductor light emitting layer and n-type semiconductor layer can be formed steep side, and after etching terminal detects, proceed over etching technique, expose completely with the upper surface of the first area of guaranteeing the second end transparency conducting layer;
Wherein, the technical process of step (4) is: deposit transparent conductive material on the n-type semiconductor layer, forms column-shaped projection after carrying out photoetching, etching to transparent conductive material; Carry out high-temperature heating to this projection, thus projection melted, the protruding natural shrinking after fusing becomes hemisphere, after cooling, then form hemispheric first top transparency conducting layer; Then adopt chemical etching technology to form top roughened layer between the spherical surface and the first top transparency conducting layer of the first top transparency conducting layer, then at the upper surface deposit transparent conductive material of top roughened layer, after planarization, obtain the second top transparency conducting layer;
Wherein, described hearth electrode and top electrode are the metal material that heat conductivility is good, such as but not limited to: gold, silver, copper, aluminium, nickel, titanium, cobalt, palladium or platinum, or also can adopt metal alloy to be formed, such as but not limited to: plation, aerdentalloy, nickel alumin(i)um alloy, Nitinol etc.
Wherein, first end transparency conducting layer, the second end transparency conducting layer, the first top transparency conducting layer and the second top transparency conducting layer are the metal compound material that electric conductivity is good, such as but not limited to: ZnO, NiO, MgO, In2O3, TiO2 or ITO; From cross section, the spherical justified margin of described hemispheric first end transparent electrode layer and hemispheric first top transparent electrode layer;
Further, p-type semiconductor layer is p-type GaN layer or p-type AlGaN layer, and n-type semiconductor layer is n-type GaN layer or N-shaped AlGaN layer, and semiconductor light emitting layer is the Al of the superlattice structure alternately formed
xin
yga
zn/AI
xin
yga
zp multiple quantum well layer, wherein x+y+z=1 and 0<x≤0.05,0<y≤0.05,0<z≤0.9;
Further, end roughened layer and top roughened layer are ITO layer, the region surface of end roughened layer uniform fold between the semispherical surface and hemispheric first end transparency conducting layer of the first end transparent electrode layer; Same, the region surface of top roughened layer uniform fold between the semispherical surface and hemispheric first top transparency conducting layer of the first top transparent electrode layer; And end roughened layer is identical with the thickness of top roughened layer, is all 60-70nm;
Further, the radius of hemispheric first end transparency conducting layer is 6-9 micron, and the interhemispheric spacing of the first end transparency conducting layer two is 2-3 micron; Same, the radius of hemispheric first top transparency conducting layer is 6-9 micron, and the first top transparency conducting layer two interhemispheric spacing are 2-3 micron;
Further, the spacing between the lower surface of the first end transparency conducting layer and the upper surface of the second end transparency conducting layer is 10-12 micron; Same, the spacing between the upper surface that the lower surface and second of the first top transparency conducting layer pushes up transparency conducting layer is 10-12 micron.
Accompanying drawing explanation
The schematic flow sheet of the method for manufacturing light-emitting that Fig. 1-7 proposes for the present invention.
Embodiment
See Fig. 1-7, the manufacture method of the light-emitting diode that the present invention proposes in turn includes the following steps:
(1) the first end transparency conducting layer 21, end roughened layer 2 and the second end transparency conducting layer 22 is formed on substrate 1 successively;
(2) on the second end transparency conducting layer 22, p-type semiconductor layer 3, semiconductor light emitting layer 4 and n-type semiconductor layer 5 is formed successively;
(3) adopt etching technics, the subregion of p-type semiconductor layer 3, semiconductor light emitting layer 4 and n-type semiconductor layer 5 is removed, till the upper surface exposing the second end transparency conducting layer 22 completely;
(4) in n-type semiconductor layer 5, form the first top transparency conducting layer 61, top roughened layer 6 and the second top transparency conducting layer 62 successively;
(5) on the upper surface of the first area that the second end transparency conducting layer 22 exposes and on the upper surface of the second top transparency conducting layer 62, hearth electrode 8 and top electrode 7 is formed respectively;
Wherein, the technical process of step (1) is: deposit transparent conductive material on substrate 1, forms column-shaped projection 21a after carrying out photoetching, etching to transparent conductive material; Carry out high-temperature heating to this protruding 21a, thus melted by protruding 21a, the protruding 21a natural shrinking after fusing becomes hemisphere, then after cooling, forms hemispheric first end transparency conducting layer 21; Then chemical etching technology is adopted to form end roughened layer 2 between the spherical surface and the first end transparency conducting layer 21 of the first end transparency conducting layer 21, then at the upper surface deposit transparent conductive material of end roughened layer 2, after planarization, the second end transparency conducting layer 22 is obtained;
Wherein, in the etching technics of step (3), the subregion of p-type semiconductor layer 3, semiconductor light emitting layer 4 and n-type semiconductor layer 5 is removed by preferred employing dry etch process (such as plasma etching) in vertical direction, thus p-type semiconductor layer 3, semiconductor light emitting layer 4 and n-type semiconductor layer 5 can be formed steep side, and after etching terminal detects, proceed over etching technique, expose completely with the upper surface of the first area of guaranteeing the second end transparency conducting layer 22;
Wherein, the technical process of step (4) is: deposit transparent conductive material in n-type semiconductor layer 5, forms column-shaped projection 61a after carrying out photoetching, etching to transparent conductive material; Carry out high-temperature heating to this protruding 61a, thus melted by protruding 61a, the protruding 61a natural shrinking after fusing becomes hemisphere, after cooling, then form hemispheric first top transparency conducting layer 61; Then chemical etching technology is adopted to form top roughened layer 6 between the spherical surface and the first top transparency conducting layer 61 of the first top transparency conducting layer 61, then at the upper surface deposit transparent conductive material of top roughened layer 6, after planarization, the second top transparency conducting layer 62 is obtained;
Wherein, described hearth electrode 8 and top electrode 7 are the metal material that heat conductivility is good, such as but not limited to: gold, silver, copper, aluminium, nickel, titanium, cobalt, palladium or platinum, or also can adopt metal alloy to be formed, such as but not limited to: plation, aerdentalloy, nickel alumin(i)um alloy, Nitinol etc.
Wherein, first end transparency conducting layer 21, second end transparency conducting layer 22, first top transparency conducting layer 61 and the second top transparency conducting layer 62 are the metal compound material that electric conductivity is good, such as but not limited to: ZnO, NiO, MgO, In2O3, TiO2 or ITO; From cross section, the spherical justified margin of described hemispheric first end transparent electrode layer 21 and hemispheric first top transparent electrode layer 61, see Fig. 7, described spherical edge aligns with dotted line A and B;
Further, p-type semiconductor layer 3 is p-type GaN layer or p-type AlGaN layer, and n-type semiconductor layer 5 is n-type GaN layer or N-shaped AlGaN layer, and semiconductor light emitting layer 4 is the Al of the superlattice structure alternately formed
xin
yga
zn/AI
xin
yga
zp multiple quantum well layer, wherein x+y+z=1 and 0<x≤0.05,0<y≤0.05,0<z≤0.9, preferably, x=0.045, y=0.55, z=0.9;
Further, end roughened layer 2 and top roughened layer 6 are ITO layer, the region surface of end roughened layer 2 uniform fold between the semispherical surface and hemispheric first end transparency conducting layer 21 of the first end transparent electrode layer 21; Same, the region surface of top roughened layer 6 uniform fold between the semispherical surface and hemispheric first top transparency conducting layer 61 of the first top transparent electrode layer 61; And end roughened layer 2 is identical with the thickness of top roughened layer 6, is all 60-70nm, be preferably 65nm;
Further, the radius of hemispheric first end transparency conducting layer 21 is 6-9 micron, is preferably 8nm; The interhemispheric spacing of first end transparency conducting layer 21 two is 2-3 micron, is preferably 2.5 microns; Same, the radius of hemispheric first top transparency conducting layer 61 is 6-9 micron, is preferably 8 microns; First top transparency conducting layer, 61 two interhemispheric spacing are 2-3 micron, are preferably 2.5nm;
Further, the spacing between the lower surface of the first end transparency conducting layer 21 and the upper surface of the second end transparency conducting layer 22 is 10-12 micron, is preferably 11 microns; Same, the spacing between the upper surface that the lower surface and second of the first top transparency conducting layer 61 push up transparency conducting layer 62 is 10-12 micron, preferably 11 microns.
So far, foregoing description specifically understands light emitting diode construction of the present invention, and relative to existing light-emitting diode, the structure that the present invention proposes can increase substantially luminosity.The embodiment of description is above only the preferred embodiments of the present invention, and it is not intended to limit the present invention.Those skilled in the art, under the prerequisite not departing from spirit of the present invention, can make any amendment, and protection scope of the present invention are limited to the appended claims to the present invention.
Claims (1)
1. a manufacture method for flatbed light-emitting diode, in turn includes the following steps:
(1) on substrate, form the first end transparency conducting layer, end roughened layer and the second end transparency conducting layer successively;
(2) on the second end transparency conducting layer, p-type semiconductor layer, semiconductor light emitting layer and n-type semiconductor layer is formed successively;
(3) adopt etching technics, the subregion of p-type semiconductor layer, semiconductor light emitting layer and n-type semiconductor layer is removed, till the upper surface exposing the second end transparency conducting layer completely;
(4) the first top transparency conducting layer, top roughened layer and the second top transparency conducting layer is formed on the n-type semiconductor layer successively;
(5) hearth electrode and top electrode is formed respectively on the upper surface exposed at the second end transparency conducting layer and on the surface of the second top transparency conducting layer;
Wherein, the technical process of step (1) is: deposit transparent conductive material on substrate, forms column-shaped projection after carrying out photoetching, etching to transparent conductive material; Carry out high-temperature heating to this projection, thus projection melted, the protruding natural shrinking after fusing becomes hemisphere, then after cooling, forms hemispheric first end transparency conducting layer; Then adopt chemical etching technology to form end roughened layer between the spherical surface and the first end transparency conducting layer of the first end transparency conducting layer, then at the upper surface deposit transparent conductive material of end roughened layer, after planarization, obtain the second end transparency conducting layer;
Wherein, in the etching technics of step (3), dry etch process is adopted to be removed the subregion of p-type semiconductor layer, semiconductor light emitting layer and n-type semiconductor layer in vertical direction, thus p-type semiconductor layer, semiconductor light emitting layer and n-type semiconductor layer are formed steep side, and after etching terminal detects, proceed over etching technique, expose completely with the upper surface of the first area of guaranteeing the second end transparency conducting layer;
Wherein, the technical process of step (4) is: deposit transparent conductive material on the n-type semiconductor layer, forms column-shaped projection after carrying out photoetching, etching to transparent conductive material; Carry out high-temperature heating to this projection, thus projection melted, the protruding natural shrinking after fusing becomes hemisphere, after cooling, then form hemispheric first top transparency conducting layer; Then adopt chemical etching technology to form top roughened layer between the spherical surface and the first top transparency conducting layer of the first top transparency conducting layer, then at the upper surface deposit transparent conductive material of top roughened layer, after planarization, obtain the second top transparency conducting layer.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102637799A (en) * | 2011-02-12 | 2012-08-15 | 上海蓝光科技有限公司 | Light emitting diode (LED) chip structure |
| CN102769085A (en) * | 2011-05-04 | 2012-11-07 | 隆达电子股份有限公司 | Semiconductor structure with low contact resistance and method for manufacturing semiconductor structure |
| CN103022306A (en) * | 2012-12-21 | 2013-04-03 | 安徽三安光电有限公司 | Light emitting diode and production method thereof |
| CN103325913A (en) * | 2013-05-27 | 2013-09-25 | 江苏晶瑞半导体有限公司 | Light emitting diode (LED) with composite transparent conducting layer and preparation method thereof |
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| TWI479698B (en) * | 2009-06-12 | 2015-04-01 | Epistar Corp | Optoelectronic device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102637799A (en) * | 2011-02-12 | 2012-08-15 | 上海蓝光科技有限公司 | Light emitting diode (LED) chip structure |
| CN102769085A (en) * | 2011-05-04 | 2012-11-07 | 隆达电子股份有限公司 | Semiconductor structure with low contact resistance and method for manufacturing semiconductor structure |
| CN103022306A (en) * | 2012-12-21 | 2013-04-03 | 安徽三安光电有限公司 | Light emitting diode and production method thereof |
| CN103325913A (en) * | 2013-05-27 | 2013-09-25 | 江苏晶瑞半导体有限公司 | Light emitting diode (LED) with composite transparent conducting layer and preparation method thereof |
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Effective date of registration: 20170724 Address after: Licheng Town East Street Liyang city 213300 Jiangsu city of Changzhou province No. 182 Patentee after: Liyang Technology Development Center Address before: Li Town of Liyang City, Jiangsu province 213300 Changzhou City Dongmen Street No. 67 Patentee before: LIYANG DONGDA TECHNOLOGY TRANSFER CENTER CO., LTD. |