CN102751393A - Light emitting diode structure - Google Patents
Light emitting diode structure Download PDFInfo
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- CN102751393A CN102751393A CN2011100987927A CN201110098792A CN102751393A CN 102751393 A CN102751393 A CN 102751393A CN 2011100987927 A CN2011100987927 A CN 2011100987927A CN 201110098792 A CN201110098792 A CN 201110098792A CN 102751393 A CN102751393 A CN 102751393A
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Abstract
The invention relates to a light emitting diode structure, which comprises a first type semiconductor layer, a light emitting layer, a second type semiconductor layer, a first conducting layer and a second conducting layer, wherein the light emitting layer is arranged on the first type semiconductor layer and comprises a plurality of energy barrier layers and a plurality of quantum well layers, the quantum well layers are respectively clamped among the energy barrier layers, the second type semiconductor layer is arranged on the light emitting layer, the thickness of the quantum well layer closest to the second type semiconductor layer is at least greater than or equal to 1.1 times the average thickness of other quantum well layers, the first conducting layer is electrically connected with the first type semiconductor layer, and the second conducting layer is electrically connected with the second type semiconductor layer. The light emitting diode structure has the advantage that the integral light emitting efficiency of the light emitting diode structure can be improved.
Description
Technical field
The present invention relates to a kind of light emitting diode construction, and be particularly related to the preferable light emitting diode construction of a kind of luminous efficiency.
Background technology
In recent years; Because the luminous efficiency of light-emitting diode constantly promotes; Make light-emitting diode replace fluorescent lamp and white heat bulb gradually in some field; For example need Dashboard illumination, the traffic signal light of scanner lamp source, Backlight For Liquid Crystal Display Panels or the front light-source automobile of reaction at a high speed, and general lighting device etc.General common light-emitting diode is to use the semi-conducting material of nitride to form, and most of aforesaid light-emitting diodes are to be formed on the sapphire substrate with crystal type of heap of stone.
Traditional light emitting diode construction can comprise usually under a substrate, the N type and limit to layer, a N type electrode and a P type electrode on limitation layer (N type cladding layer), a multiple quantum trap structure (multiple quantum wells tructure), the P type.Limiting to layer on limitation layer, multiple quantum trap structure and the P type under the N type is disposed on the substrate in regular turn; And N type electrode and P type electrode electrically connect under the N type limitation layer on limitation layer and the P type respectively; Wherein apply driving voltage in N type electrode and P type electrode, but just the driven for emitting lights diode structure is luminous.
In general, the thickness of the quantum well layer in the multiple quantum trap structure can be designed to identical usually, and if the thickness of quantum well layer is blocked up; Then can produce defective and influence the luminous benefit of light emitting diode construction; Therefore, how to design the thickness of the quantum well layer in the multiple quantum trap structure effectively, when avoiding defective to produce; Can also make the luminous benefit of light emitting diode construction obtain to promote effectively, be an important problem in fact.
Summary of the invention
The present invention provides a kind of light emitting diode construction, and it has preferable luminous efficiency.
Other purposes of the present invention and advantage can further be understood from disclosed technical characterictic.
For reaching one above-mentioned or part or all of purpose or other purposes, one embodiment of the invention propose a kind of light emitting diode construction, comprise first type semiconductor layer, luminescent layer, second type semiconductor layer, first conductive layer and second conductive layer.Luminescent layer is disposed on first type semiconductor layer.Luminescent layer comprises several energy barrier layers and several quantum well layers, and wherein these quantum well layers are located in respectively between these energy barrier layers.Second type semiconductor layer is disposed on the luminescent layer, wherein near the thickness of the quantum well layer of second type semiconductor layer at least more than or equal to 1.1 times of the average thickness of other these quantum well layers.First conductive layer electrically connects first type semiconductor layer.Second conductive layer electrically connects second type semiconductor layer.
In one embodiment of this invention, near the thickness of the quantum well layer of second type semiconductor layer thickness greater than other each these quantum well layers.
In one embodiment of this invention, near the thickness of the quantum well layer of second type semiconductor layer at least more than or equal to 1.2 times of the average thickness of other these quantum well layers.
In one embodiment of this invention, near the thickness of the quantum well layer of second type semiconductor layer 3 times smaller or equal to the average thickness of other these quantum well layers.
In one embodiment of this invention, the thickness of other each these quantum well layers is all identical.
In one embodiment of this invention; Light emitting diode construction also comprises brilliant substrate of heap of stone; Wherein first type semiconductor layer, luminescent layer and second type semiconductor layer are stacked on the brilliant substrate of heap of stone in regular turn; And the luminescent layer and second type semiconductor layer are disposed on the subregion of first type semiconductor layer and expose part first type semiconductor layer, and first conductive layer is disposed on first type semiconductor layer that is exposed by luminescent layer and second type semiconductor layer.
In one embodiment of this invention, first conductive layer is disposed at the opposite side of first type semiconductor layer, and first type semiconductor layer is between the luminescent layer and first conductive layer.In one embodiment of this invention, light emitting diode construction also comprises electrically-conductive backing plate, is disposed between first type semiconductor layer and first conductive layer.
In one embodiment of this invention, first type semiconductor layer is a n type semiconductor layer, and second type semiconductor layer is a p type semiconductor layer.
In one embodiment of this invention, the material of first type semiconductor layer and second type semiconductor layer is that one of them doped with II family element or IV family element constitute at least by gallium nitride, aluminium gallium nitride alloy, InGaN, aluminum indium nitride gallium.
In one embodiment of this invention, the material of these energy barrier layers comprises gallium nitride, and the material of these quantum well layers comprises InGaN.
Based on above-mentioned; The present invention is through making near the thickness of the quantum well layer of second type semiconductor layer thickness more than or equal to other each these quantum well layers; And equal 1.1 times of average thickness of other these quantum well layers at least greater than meeting near the thickness of the quantum well layer of second type semiconductor layer; Be preferably 1.2 times, thus, when light emitting diode construction is driven; Quantum well layer near second type semiconductor layer just can carry more carrier, thereby can promote the whole lighting efficiency of light emitting diode construction.
For letting the above-mentioned feature and advantage of the present invention can be more obviously understandable, hereinafter is special lifts embodiment, and conjunction with figs. elaborates as follows.
Description of drawings
Fig. 1 is the partial cutaway diagrammatic sketch of the light emitting diode construction of one embodiment of the invention.
The difference that Fig. 2 A～Fig. 2 D is respectively the luminescent layer of Fig. 1 is implemented the partial schematic diagram of aspect.
Fig. 3 is the partial cutaway diagrammatic sketch of the light emitting diode construction of one embodiment of the invention.
Reference numeral:
100,200: light emitting diode construction 110,210: the first type semiconductor layer
120,220: luminescent layer 122: the energy barrier layer
124a, 124b: quantum well layer 130,230: the second type semiconductor layer
140: brilliant substrate 150 of heap of stone: current blocked layer
160: electric current dispersion layer 170: resilient coating
240: electrically-conductive backing plate E1: first conductive layer
E2: the second conductive layer H1, H2, H3: thickness
Embodiment
About aforementioned and other technology contents, characteristics and effect of the present invention, in the detailed description of following cooperation, can clearly appear with reference to a preferred embodiment of accompanying drawing.The direction term of being mentioned in following examples, for example: upper and lower, left and right, front or rear etc. only are the directions with reference to accompanying drawing.Therefore, the direction term of use is to be used for explaining not to be to be used for limiting the present invention.
Fig. 1 is the partial cutaway diagrammatic sketch of the light emitting diode construction of one embodiment of the invention, and the difference that Fig. 2 A～Fig. 2 D is respectively the luminescent layer of Fig. 1 is implemented the partial schematic diagram of aspect.Please earlier with reference to figure 1 and Fig. 2 A, the light emitting diode construction 100 of present embodiment comprises one first type semiconductor layer 110, a luminescent layer 120, one second type semiconductor layer 130, one first conductive layer E1 and one second conductive layer E2.Luminescent layer 120 is disposed on first type semiconductor layer 110, and second type semiconductor layer 130 is disposed on the luminescent layer 120, and promptly luminescent layer 120 is between first type semiconductor layer 110 and second type semiconductor layer 130.In the present embodiment, first type semiconductor layer 110 for example is a n type semiconductor layer, and second type semiconductor layer 130 then can be a p type semiconductor layer.Particularly; The material of first type semiconductor layer 110 and second type semiconductor layer 130 be can by gallium nitride, aluminium gallium nitride alloy, InGaN, aluminum indium nitride gallium at least one of them doped with II family element or IV family element constitute, wherein present embodiment with gallium nitride as illustrating.In other embodiment, the material that first type semiconductor layer 110 and second type semiconductor layer 130 are selected for use also can be selected binary compound (binary compound), for example aluminium nitride, indium nitride for use; Ternary compound (ternary compound), for example aluminium gallium nitride alloy, indium gallium nitride, aluminum indium nitride, aluminum gallium arsenide, InGaAsP; And quaternary compound (quaternary compound) indium gallium nitride aluminium, AlGaInP or combinations thereof, this part is decided by user's demand and design.
In light emitting diode construction 100, the luminescent layer 120 of present embodiment comprises several energy barrier layers 122 and several quantum well layers 124a, 124b, and wherein these quantum well layers 124a, 124b are located in respectively between these energy barrier layers 122, shown in Fig. 2 A.In other words; The luminescent layer 120 of present embodiment is the structure that presents a kind of multiple quantum trap, specifically, and in the structure of this multiple quantum trap; Near the thickness H1 of the quantum well layer 124a of second type semiconductor layer 130 to I haven't seen you for ages more than or equal to 1.1 times of the average thickness of other these quantum well layers 124b; Be preferably 1.2 times, thus, when light emitting diode construction 100 is driven; Quantum well layer 124a near second type semiconductor layer 130 just can carry more carrier, thereby can promote the whole lighting efficiency of light emitting diode construction 100.In the present embodiment, can be greater than the thickness H2 of other each these quantum well layers 124b near the thickness H1 of the quantum well layer 124a of second type semiconductor layer 130.
With the luminescent layer 120 (multiple quantum trap) shown in Fig. 2 A, as if the thickness H1 of quantum well layer 124a, 124b, when H2 is all 2.8nm, then the whole luminosity of light emitting diode construction 100 is 750mcd.On the contrary, if promote the thickness H1 to 3.1nm near the quantum well layer 124a of second type semiconductor layer 130, and the thickness H2 of other quantum well layers 124b all remains unchanged, and then the whole luminosity of light emitting diode construction 100 just can be promoted to 820mcd.In other words, through with present embodiment be designed to the thickness H2 greater than other each these quantum well layers 124b near the thickness H1 of the quantum well layer 124a of second type semiconductor layer 130 the time, the luminosity of light emitting diode construction 100 can improve 9.33% at least.
Need to prove; Though make the thickness H1 of quantum well layer 124a help to promote the luminous benefit of light emitting diode construction 100 greater than the thickness H2 of other each these quantum well layers 124b; Also can make it produce defective but the thickness of quantum well layer 124a is blocked up, thereby reduce the luminosity that promotes light emitting diode construction 100.Therefore, can be preferably 2.5 times smaller or equal to 3 times of the average thickness of other these quantum well layers 124b in principle near the thickness of the quantum well layer 124a of second type semiconductor layer 130 less than average thickness.In the present embodiment, the thickness H1 of quantum well layer 124a, 124b, H2 drop on 0.5nm to 8nm, are preferably 2nm to 4.5nm.In addition; Because first type semiconductor layer 110 and second type semiconductor layer 130 of present embodiment are as illustrating with gallium nitride; Therefore, the material of the energy barrier layer 122 of present embodiment can be gallium nitride, and the material of quantum well layer 124a, 124b then can be InGaN.
Please continue with reference to figure 1 and Fig. 2 A; In light emitting diode construction 100; Luminescent layer 120 can be the multiple quantum trap structure that adopts shown in Fig. 2 A; Promptly be can be greater than the thickness H2 of each quantum well layer 124b near the thickness H1 of the quantum well layer 124a of second type semiconductor layer 130, and the thickness H2 of these quantum well layers 124b is identical in fact, but the present invention be as limit.In other embodiments, the luminescent layer 120 of light emitting diode construction 100 shown in Figure 1 also can adopt the multiple quantum trap structure shown in Fig. 2 B～Fig. 2 D, and still can have preferable luminous benefit, and the form of each multiple quantum trap below will be detailed.
In Fig. 2 B, near the thickness H1 of the quantum well layer 124a of the second type semiconductor layer 130 thickness H2 greater than each quantum well layer 124b, and the thickness H2 of these quantum well layers 124b diminishes on the direction away from second type semiconductor layer 130 in fact; In Fig. 2 C; Can equal near the thickness H3 of the quantum well layer 124b of first type semiconductor layer 110 and greater than the thickness H2 of other quantum well layers 124b near the thickness H1 of the quantum well layer 124a of second type semiconductor layer 130, and near the thickness H1 of the quantum well layer 124a of second type semiconductor layer 130 can more than or equal to the thickness H2 of these quantum well layers 124b, H3 and average 1.1 times; In Fig. 2 D; Equal the thickness H3 of other a certain quantum well layer 124b near the thickness H1 of the quantum well layer 124a of second type semiconductor layer 130; And greater than the thickness H2 of other quantum well layers 124b, and near the thickness H1 of the quantum well layer 124a of second type semiconductor layer 130 can more than or equal to the thickness H2 of these quantum well layers 124b, H3 and average 1.1 times.
Can know by Fig. 1; The light emitting diode construction of present embodiment is a kind of horizontal light emitting diode construction; Therefore light emitting diode construction 100 also comprises a brilliant substrate 140 of heap of stone; Wherein first type semiconductor layer 110, luminescent layer 120 and second type semiconductor layer 130 can be stacked on the brilliant substrate 140 of heap of stone in regular turn, and luminescent layer 120 and second type semiconductor layer 130 are disposed on the subregion of first type semiconductor layer 110 and expose part first type semiconductor layer 110.Particularly; After first type semiconductor layer 110, luminescent layer 120 and second type semiconductor layer 130 can be stacked in brilliant substrate 140 of heap of stone in regular turn; Just can remove the part luminescent layer 120 and second type semiconductor layer 130 through a photolithography process; To expose part first type semiconductor layer 110, as shown in Figure 1.Afterwards; The first conductive layer E1 is disposed on first type semiconductor layer 110 that is exposed by luminescent layer 120 and second type semiconductor layer 130; And the second conductive layer E2 is disposed on second type semiconductor layer 130; With driven for emitting lights diode structure 100, wherein the first conductive layer E1 can electrically connect first type semiconductor layer 110, and the second conductive layer E2 electrically connects second type semiconductor layer 130.In the present embodiment; The first conductive layer E1 and the second conductive layer E2 can be simple layers or multiple layer metal piles up; And the material of the two also can be selected for use like metal, above-mentioned alloy, above-mentioned metal oxide, above-mentioned metal nitrides such as gold, silver, platinum, copper, chromium, tin, lead, hafnium, tungsten, molybdenum, neodymium, titanium, tantalum, aluminium, zinc; Or the material of combinations thereof, this part is looked user's demand and is decided.
In the present embodiment, in order to promote the whole electrical performance and the luminous efficiency of light emitting diode construction 100, light emitting diode construction 100 also can include a current blocked layer 150 and an electric current dispersion layer 160.Current blocked layer 150 is disposed on part second type semiconductor layer 130.In addition, electric current dispersion layer 160 is disposed on part second type semiconductor layer 13 to cover current blocked layer 150.In the present embodiment; Electric current dispersion layer 160 can be transparency conducting layer, its material for example be indium tin oxide (indium tin oxide, ITO), indium-zinc oxide (indium zinc oxide; IZO), indium tin zinc oxide (indium tin zinc oxide; ITZO), zinc oxide (zinc oxide), aluminium tin-oxide (aluminum tin oxide, ATO), the aluminium zinc oxide (aluminum zinc oxide, AZO), cadmium indium oxide (cadmium indium oxide; CIO), the cadmium zinc oxide (cadmium zinc oxide, CZO), gallium zinc oxide (GZO) and tin oxyfluoride (FTO).
What deserves to be mentioned is,, can also form a resilient coating 170 earlier on substrate 110 in forming first type semiconductor layer 110 before substrate 110 in order to grow up or to build the brilliant first high-quality type semiconductor layer 110 on substrate 110, as shown in Figure 1.
Fig. 3 is the partial cutaway diagrammatic sketch of the light emitting diode construction of one embodiment of the invention.Please refer to Fig. 3, the light emitting diode construction 200 of present embodiment comprises one first type semiconductor layer 210, a luminescent layer 220, one second type semiconductor layer 230, one first conductive layer E1 and one second conductive layer E2.Luminescent layer 220 is disposed on first type semiconductor layer 210, and second type semiconductor layer 230 is disposed on the luminescent layer 220, and promptly luminescent layer 220 is between first type semiconductor layer 210 and second type semiconductor layer 230.In the present embodiment, first type semiconductor layer 210 can be n type semiconductor layer, and second type semiconductor layer 230 then can be p type semiconductor layer.Particularly; The material of first type semiconductor layer 210 and second type semiconductor layer 230 be can by gallium nitride, aluminium gallium nitride alloy, InGaN, aluminum indium nitride gallium at least one of them doped with II family element or IV family element constitute, wherein present embodiment with gallium nitride as illustrating.In other embodiment, the material that first type semiconductor layer 210 and second type semiconductor layer 230 are selected for use also can be selected binary compound (binary compound), for example aluminium nitride, indium nitride for use; Ternary compound (ternary compound), for example aluminium gallium nitride alloy, indium gallium nitride, aluminum indium nitride, aluminum gallium arsenide, InGaAsP; And quaternary compound (quaternary compound) indium gallium nitride aluminium, AlGaInP or combinations thereof, this part is decided by user's demand and design.
Can know by Fig. 3; The light emitting diode construction 200 of present embodiment is a kind of vertical LED structure; Therefore the first conductive layer E1 is disposed at the opposite side of first type semiconductor layer 210, and first type semiconductor layer 210 is between the luminescent layer 220 and the first conductive layer E1.In the present embodiment, light emitting diode construction 200 can include an electrically-conductive backing plate 240, is disposed between first type semiconductor layer 210 and the first conductive layer E1.Need to prove; Because the luminescent layer 220 of present embodiment also is to adopt aforesaid luminescent layer 110 described enforcement aspects; Be that luminescent layer 220 also can adopt the enforcement aspect shown in Fig. 2 A to Fig. 2 D, therefore, the luminous efficiency of the light emitting diode construction 200 of present embodiment also can obtain effective lifting; This part can just repeat no more at this with reference to above stated specification.
In sum, light emitting diode construction of the present invention has advantage at least.At first; Through making near the thickness of the quantum well layer of second type semiconductor layer thickness more than or equal to other each these quantum well layers; And equal 1.1 times of average thickness of other these quantum well layers at least greater than meeting near the thickness of the quantum well layer of second type semiconductor layer; Be preferably 1.2 times, thus, when light emitting diode construction is driven; Quantum well layer near second type semiconductor layer just can carry more carrier, thereby can promote the whole lighting efficiency of light emitting diode construction.In addition; Because near the thickness of the quantum well layer of second type semiconductor layer 3 times smaller or equal to the average thickness of other these quantum well layers; Therefore can effectively promote under the whole lighting efficiency of light emitting diode construction; And can avoid the quantum well layer blocked up and produce defective simultaneously, and influence the whole lighting efficiency of light emitting diode construction.
The above; Be merely preferred embodiment of the present invention; When not limiting the scope that the present invention implements with this, promptly all simple equivalent of doing according to claim of the present invention and invention description change and modify, and all still belong in the scope that patent of the present invention contains.Arbitrary embodiment of the present invention in addition or claim must not reached disclosed whole purposes or advantage or characteristics.In addition, summary part and title only are the usefulness that is used for assisting the patent document search, are not to be used for limiting interest field of the present invention.
Claims (11)
1. light emitting diode construction comprises:
First type semiconductor layer;
Luminescent layer is disposed on this first type semiconductor layer, and this luminescent layer comprises several energy barrier layers and several quantum well layers, and wherein those quantum well layers are located in respectively between those energy barrier layers;
Second type semiconductor layer is disposed on this luminescent layer, wherein near the thickness of this quantum well layer of this second type semiconductor layer at least more than or equal to 1.1 times of the average thickness of other those quantum well layers;
First conductive layer electrically connects this first type semiconductor layer; And
Second conductive layer electrically connects this second type semiconductor layer.
2. light emitting diode construction according to claim 1 is wherein near the thickness of this quantum well layer of this second type semiconductor layer thickness greater than other each those quantum well layers.
3. light emitting diode construction according to claim 1, wherein near the thickness of this quantum well layer of this second type semiconductor layer at least more than or equal to 1.2 times of the average thickness of other those quantum well layers.
4. light emitting diode construction according to claim 1 is wherein near smaller or equal to the average thickness of other those quantum well layers 3 times of the thickness of this quantum well layer of this second type semiconductor layer.
5. light emitting diode construction according to claim 1, wherein the thickness of other each those quantum well layers is all identical.
6. light emitting diode construction according to claim 1; Also comprise brilliant substrate of heap of stone; Wherein this first type semiconductor layer, this luminescent layer and this second type semiconductor layer are stacked on this brilliant substrate of heap of stone in regular turn; And this luminescent layer and this second type semiconductor layer are disposed on the subregion of this first type semiconductor layer and expose this first type semiconductor layer of part, and this first conductive layer is disposed on this first type semiconductor layer that is exposed by this luminescent layer and this second type semiconductor layer.
7. light emitting diode construction according to claim 1, wherein this first conductive layer is disposed at the opposite side of this first type semiconductor layer, and this first type semiconductor layer is between this luminescent layer and this first conductive layer.
8. light emitting diode construction according to claim 7 also comprises electrically-conductive backing plate, is disposed between this first type semiconductor layer and this first conductive layer.
9. light emitting diode construction according to claim 1, wherein this first type semiconductor layer is a n type semiconductor layer, and this second type semiconductor layer is a p type semiconductor layer.
10. light emitting diode construction according to claim 1, wherein the material of this first type semiconductor layer and this second type semiconductor layer is that one of them doped with II family element or IV family element constitute at least by gallium nitride, aluminium gallium nitride alloy, InGaN, aluminum indium nitride gallium.
11. light emitting diode construction according to claim 1, wherein the material of those energy barrier layers comprises gallium nitride, and the material of those quantum well layers comprises InGaN.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104779328A (en) * | 2014-01-13 | 2015-07-15 | 新世纪光电股份有限公司 | LED (light-emitting diode) structure |
| US9640712B2 (en) | 2012-11-19 | 2017-05-02 | Genesis Photonics Inc. | Nitride semiconductor structure and semiconductor light emitting device including the same |
| US9685586B2 (en) | 2012-11-19 | 2017-06-20 | Genesis Photonics Inc. | Semiconductor structure |
| US9780255B2 (en) | 2012-11-19 | 2017-10-03 | Genesis Photonics Inc. | Nitride semiconductor structure and semiconductor light emitting device including the same |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060219998A1 (en) * | 2005-03-31 | 2006-10-05 | Showa Denko K.K. | Gallium nitride-based compound semiconductor multilayer structure and production method thereof |
| TW200919883A (en) * | 2007-09-18 | 2009-05-01 | Osram Opto Semiconductors Gmbh | Opto-electronic semiconductor chip with quantum-well structure |
| CN101582478A (en) * | 2009-05-21 | 2009-11-18 | 上海蓝光科技有限公司 | Multi-quantum-well structure used in photoelectron device and manufacturing method thereof |
| CN101587930A (en) * | 2009-06-22 | 2009-11-25 | 武汉华灿光电有限公司 | A kind of quantum well structure of gallium nitride based LED and growing method |
| US20100080257A1 (en) * | 2008-10-01 | 2010-04-01 | Samsung Electro-Mechanics Co., Ltd. | Nitride semiconductor device |
-
2011
- 2011-04-20 CN CN2011100987927A patent/CN102751393A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060219998A1 (en) * | 2005-03-31 | 2006-10-05 | Showa Denko K.K. | Gallium nitride-based compound semiconductor multilayer structure and production method thereof |
| TW200919883A (en) * | 2007-09-18 | 2009-05-01 | Osram Opto Semiconductors Gmbh | Opto-electronic semiconductor chip with quantum-well structure |
| US20100080257A1 (en) * | 2008-10-01 | 2010-04-01 | Samsung Electro-Mechanics Co., Ltd. | Nitride semiconductor device |
| CN101582478A (en) * | 2009-05-21 | 2009-11-18 | 上海蓝光科技有限公司 | Multi-quantum-well structure used in photoelectron device and manufacturing method thereof |
| CN101587930A (en) * | 2009-06-22 | 2009-11-25 | 武汉华灿光电有限公司 | A kind of quantum well structure of gallium nitride based LED and growing method |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9640712B2 (en) | 2012-11-19 | 2017-05-02 | Genesis Photonics Inc. | Nitride semiconductor structure and semiconductor light emitting device including the same |
| US9685586B2 (en) | 2012-11-19 | 2017-06-20 | Genesis Photonics Inc. | Semiconductor structure |
| US9780255B2 (en) | 2012-11-19 | 2017-10-03 | Genesis Photonics Inc. | Nitride semiconductor structure and semiconductor light emitting device including the same |
| CN104779328A (en) * | 2014-01-13 | 2015-07-15 | 新世纪光电股份有限公司 | LED (light-emitting diode) structure |
| CN104779328B (en) * | 2014-01-13 | 2018-02-02 | 新世纪光电股份有限公司 | Light emitting diode construction |
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