CN102185040A - LED (Light-Emitting Diode) surface roughening process with wet-method chemical corrosion - Google Patents
LED (Light-Emitting Diode) surface roughening process with wet-method chemical corrosion Download PDFInfo
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- CN102185040A CN102185040A CN2011100620072A CN201110062007A CN102185040A CN 102185040 A CN102185040 A CN 102185040A CN 2011100620072 A CN2011100620072 A CN 2011100620072A CN 201110062007 A CN201110062007 A CN 201110062007A CN 102185040 A CN102185040 A CN 102185040A
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Abstract
The invention discloses an LED (Light-Emitting Diode) surface roughening process with wet-method chemical corrosion, comprising the following steps of: firstly, covering photoresist on a GaN surface of a light outgoing layer of an LED; and then carrying out chemical wet-method corrosion under the protection of a photoresist film mask, wherein corrosive liquid of the chemical wet-method corrosion is mixing liquid including aqua regia and deionized water, and the volume ratio of the aqua regia to the deionized water in the corrosive liquid is (3-5): 1. In the invention, the wet-method chemical corrosion is carried out on the LED surface by utilizing the mixing liquid including the aqua regia and the deionized water; by means of the surface roughening method, total reflection can be inhibited and light extraction efficiency can be improved; the small hole diameter of the roughed light outgoing surface is 6 mum, the density is 20 mum of a hole center distance, the depth is 2-4 mum, the light outgoing efficiency is improved a lot when the side wall slope gradient of the small hole is between 45 DEG and 60 DEG, and the light intensity can be improved by 29% at most.
Description
Technical field
The present invention relates to LED surface coarsening technology.
Background technology
LED Window layer material GaN from high index of refraction incides the air of low-refraction when light, can produce total reflection phenomenon, thereby lose a large amount of emergent lights.And because the P electrode of device is opaque metal electrode, can be with the light reflected back LED inside of directive electrode.And the light of reflected back inside is fallen to cause that by heat absorption again device temperature rises causes internal quantum efficiency to reduce or the like problem.If change the surface topography of conventional LED, allow interface become coarse by smooth, will increase the randomness of emergent light incident angle when reflecting at the interface greatly.On statistical probability, can make more photon shine in the air, avoid total reflection.
In order to improve light extraction efficiency, adopt the surface coarsening method can suppress total reflection and improve light extraction efficiency.At present in GaN material and device technology thereof, or means based on dry etchings such as Ar+ etching, ICP etchings, but, based on the etching injury introduced of dry etching of ion bombardment and reaction the optical property and the contact performance of device there is very big influence, especially for laminate structure, this influence more may be fatal.
Summary of the invention
Technical problem to be solved by this invention just provides a kind of wet chemical etching technique LED surface coarsening technology, effectively reduces etching injury to the optical property of device and the influence of contact performance.
For solving the problems of the technologies described above; the present invention adopts following technical scheme: a kind of wet chemical etching technique LED surface coarsening technology; it is characterized in that: at first go out photoresist on the surface coverage of photosphere GaN at LED; use chemical wet etching then under the protection of photoresist film mask, wherein the corrosive liquid of chemical wet etching is the mixed liquor of chloroazotic acid and deionized water.
Preferably, the volume ratio of chloroazotic acid and deionized water is (3～5) in the described corrosive liquid: 1.
Preferably, bath temperature is 30 ℃-40 ℃ during described chemical wet etching.
Preferably, the water-bath time it is 3-5 minute during described chemical wet etching.
Further, the volume ratio of chloroazotic acid and deionized water is 4: 1 in the described corrosive liquid, and bath temperature is 35 ℃ during chemical wet etching, and the water-bath time is 4 minutes.
The mixed liquor that the present invention forms with chloroazotic acid and deionized water carries out wet chemical etching technique to the LED surface, this surface coarsening method can suppress total reflection and improve light extraction efficiency, be 6 μ m in light output surface pitting diameter after the alligatoring, density is that the hole heart is apart from 20 μ m, the degree of depth is 2-4 μ m, and the pitting sidewall gradient is a lot of to the raising of light extraction efficiency at 45 ° between 60 ° the time, can obtain 29% light intensity at most and improve.
Embodiment
Specify wet chemical etching technique LED surface coarsening technology below; at first go out photoresist on the surface coverage of photosphere GaN at LED; under the protection of photoresist film mask, use chemical wet etching then; wherein the corrosive liquid of chemical wet etching is the mixed liquor of chloroazotic acid and deionized water, and the volume ratio of chloroazotic acid and deionized water is (3～5) in the described corrosive liquid: 1.Bath temperature is 30 ℃-40 ℃ during described chemical wet etching.The water-bath time is 3-5 minute during described chemical wet etching.Immersion method is adopted in chemical corrosion, and water-bath refers to that specifically the surface that LED is gone out photosphere GaN is immersed in the corrosive liquid, and simultaneously with the corrosive liquid temperature with heat to 30 ℃-40 ℃.
Wherein photoetching process is to be common process of the prior art, through several steps such as gluing, preceding baking, exposure, development, post bakes.
Gluing: glue spreading method is rotary process.Being operating as that rotary process is concrete adopts the vacuum suction method sample to be fixed on the axle center of mini-roundabout, with dropper photoresist is coated in (requiring does not have bubble in the glue) on the sample then, begin to rotate mini-roundabout (by motor drives) again, most glue is thrown away because of rotation, have only small part to stay on the sample.These glue are launched into a uniform film under surface tension and rotary centrifugal force synergy.The thickness of glued membrane is regulated by the concentration of rotating speed and glue.
Preceding baking: the purpose of preceding baking is to impel glued membrane body internal solvent to volatilize fully, make the glued membrane drying, to increase glued membrane and the adhesiveness of metal film and the resistance to wear of glued membrane, promptly be close to and the glued membrane that do not wear and tear exposing punctual permission glued membrane and mask had necessarily, do not stain mask.Simultaneously, have only the photoresist drying, when exposure, could fully carry out chemical reaction.
Exposure: exposure is exactly to cover lay photoetching mask plate at the sample surfaces that coats photoresist, carries out elective irradiation with ultraviolet light, makes the photoresist generation photochemical reaction that is subjected to the illumination part, through developing, shows on glued membrane and the corresponding figure of mask.
Develop: the purpose of development is that sensitization photoetching peptization is partly removed, and stays the glued membrane of not sensitization part, thereby shows our needed figure.For the photoresist of our usefulness, we adopt the stronger KOH of solvability as developer solution.It has that developing powder is fast, figure is clear and develops advantage such as clean.
Post bake: because softening, expansion takes place glued membrane when development and photographic fixing, so must carry out the work of firm glued membrane after developing, the abbreviation post bake.Post bake can make between glued membrane and the metal film to be close to more firmly, has also strengthened the resistance to corrosion of glued membrane itself simultaneously
In the preferred embodiment 1, the volume ratio of chloroazotic acid and deionized water is 4: 1 in the described corrosive liquid, and bath temperature is 35 ℃ during chemical wet etching, and the water-bath time is 4 minutes.
In the preferred embodiment 2, the volume ratio of chloroazotic acid and deionized water is 3: 1 in the described corrosive liquid, and bath temperature is 40 ℃ during chemical wet etching, and the water-bath time is 5 minutes.
In the preferred embodiment 3, the volume ratio of chloroazotic acid and deionized water is 5: 1 in the described corrosive liquid, and bath temperature is 30 ℃ during chemical wet etching, and the water-bath time is 3 minutes.
Claims (5)
1. wet chemical etching technique LED surface coarsening technology; it is characterized in that: at first go out photoresist on the surface coverage of photosphere GaN at LED; use chemical wet etching then under the protection of photoresist film mask, wherein the corrosive liquid of chemical wet etching is the mixed liquor of chloroazotic acid and deionized water.
2. wet chemical etching technique LED surface coarsening technology according to claim 1 is characterized in that: the volume ratio of chloroazotic acid and deionized water is (3～5) in the described corrosive liquid: 1.
3. wet chemical etching technique LED surface coarsening technology according to claim 2 is characterized in that: bath temperature is 30 ℃-40 ℃ during described chemical wet etching.
4. wet chemical etching technique LED surface coarsening technology according to claim 3 is characterized in that: the water-bath time is 3-5 minute during described chemical wet etching.
5. wet chemical etching technique LED surface coarsening technology according to claim 4, it is characterized in that: the volume ratio of chloroazotic acid and deionized water is 4: 1 in the described corrosive liquid, and bath temperature is 35 ℃ during chemical wet etching, and the water-bath time is 4 minutes.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100620072A CN102185040A (en) | 2011-03-15 | 2011-03-15 | LED (Light-Emitting Diode) surface roughening process with wet-method chemical corrosion |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011100620072A CN102185040A (en) | 2011-03-15 | 2011-03-15 | LED (Light-Emitting Diode) surface roughening process with wet-method chemical corrosion |
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| CN102185040A true CN102185040A (en) | 2011-09-14 |
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| CN2011100620072A Pending CN102185040A (en) | 2011-03-15 | 2011-03-15 | LED (Light-Emitting Diode) surface roughening process with wet-method chemical corrosion |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109208001A (en) * | 2018-11-12 | 2019-01-15 | 中国工程物理研究院材料研究所 | A kind of method that metal surface regional area accurately corrodes |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101345274A (en) * | 2007-07-11 | 2009-01-14 | 中国科学院半导体研究所 | Method for improving luminous efficiency of GaN based LED by using graphic underlay |
| US20090050903A1 (en) * | 2007-08-21 | 2009-02-26 | Cree, Inc. | Selective wet etching of gold-tin based solder |
| CN101599523A (en) * | 2009-06-01 | 2009-12-09 | 广东昭信光电科技有限公司 | The light emitting diode (LED) chip with vertical structure and the manufacture method thereof that adopt conducting polymer to shift |
| CN101872813A (en) * | 2009-04-24 | 2010-10-27 | 刘胜 | Light-emitting diode chip and manufacturing method thereof |
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2011
- 2011-03-15 CN CN2011100620072A patent/CN102185040A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101345274A (en) * | 2007-07-11 | 2009-01-14 | 中国科学院半导体研究所 | Method for improving luminous efficiency of GaN based LED by using graphic underlay |
| US20090050903A1 (en) * | 2007-08-21 | 2009-02-26 | Cree, Inc. | Selective wet etching of gold-tin based solder |
| CN101872813A (en) * | 2009-04-24 | 2010-10-27 | 刘胜 | Light-emitting diode chip and manufacturing method thereof |
| CN101599523A (en) * | 2009-06-01 | 2009-12-09 | 广东昭信光电科技有限公司 | The light emitting diode (LED) chip with vertical structure and the manufacture method thereof that adopt conducting polymer to shift |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109208001A (en) * | 2018-11-12 | 2019-01-15 | 中国工程物理研究院材料研究所 | A kind of method that metal surface regional area accurately corrodes |
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Application publication date: 20110914 |