TW201131302A - Radiation-sensitive composition, cured film and forming methods thereof - Google Patents

Radiation-sensitive composition, cured film and forming methods thereof Download PDF

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TW201131302A
TW201131302A TW099144372A TW99144372A TW201131302A TW 201131302 A TW201131302 A TW 201131302A TW 099144372 A TW099144372 A TW 099144372A TW 99144372 A TW99144372 A TW 99144372A TW 201131302 A TW201131302 A TW 201131302A
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radiation
composition
oxide particles
component
sensitive composition
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TW099144372A
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TWI505032B (en
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Yasunobu Suzuki
Jirou Ueda
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Jsr Corp
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0751Silicon-containing compounds used as adhesion-promoting additives or as means to improve adhesion
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

The purpose of the present invention is to provide a polysiloxane-based radiation-sensitive composition which has high coatablilty and pattern-formability, while the obtained cured article has high refractivity besides transparency and adhesiveness, and may has positive radiation-sensitive characteristics, and a patterned cured film formed by this composition, and forming methods thereof. The solution means of the present invention is a radiation-sensitive composition which contains [A] siloxane polymer, [B] metal oxide particles, and [C] radiation-sensitive acid-producing agent or radiation-sensitive base-producing agent, wherein the aforementioned [B] metal oxide particles are oxide particles of at least one species of metals selected from a group consisted of aluminium, zirconium, titanium, zinc, indium, tin, antimony, and cerium. The radiation-sensitive composition is preferred to further containing dispersant.

Description

201131302 六、發明說明: 【發明所屬之技術領域】 本發明關於一種感放射線性組成物、由該組成物形成 的硬化膜以及該硬化膜的形成方法。 【先前技術】 液晶顯示元件等係在其製程中,藉由溶劑、酸或鹼性 溶液等而進行浸漬處理。此外,該液晶顯示元件在藉由濺 射而形成線路電極層時,元件表面會局部暴露在高溫下。 因此’爲了防止由於採用該溶劑等進行的浸漬處理或高溫 處理使液晶顯示元件惡化或損傷,在元件的表面進行設置 對這些處理具有耐受性的保護膜。此外,在液晶顯示元件 等中,設置有通常設置爲層狀的用於使線路間絕緣的層間 絕緣膜或用於使兩張基板間的間隔(胞間隔)保持穩定的隔 片。 以該保護膜、層間絕緣膜和隔片等(以下也稱爲保護膜 等)的材料而言’以用於獲得所需圖案形狀的步驟數量少, 且具有足夠的平坦性者爲較佳,因此廣泛使用感放射線性 組成物。該保護膜等的材料係被要求對於需要形成該保護 膜等的基板或底層,進一步在各層等上形成的層,在硬化 時的黏附性高,具有透明性,塗布性、圖案形成性優異等 性能。以用於形成滿足這些特性的保護膜等的材料而言, 主要使用丙烯酸酯類樹脂。與之相對,嘗試了使用比丙稀 酸酯類樹脂在耐熱性和透明性更優異的聚矽氧烷類材料作 201131302 爲感放射線性組成物的成分(參見日本特開2000 — 1 648號 公報、日本特開2 006 -178436號公報)。但是,聚矽氧烷 類材料由於折射率比丙烯酸酯類樹脂更低,因此在例如 ITO (銦錫氧化物)透明導電膜圖案等其他層的表面上塗布 時,折射率差變大,因此存在容易看見ITO圖案,液晶顯 示畫面的目視確認性降低的缺點。 此外,該感放射線性組成物從例如層間絕緣膜中接觸 孔形成之優勢的觀點等來看,較佳爲使用正型感放射線性 硬化性組成物。但是,以聚矽氧烷類材料中的正型感放射 線性組成物而言,由於圖案形成性高,因此作爲感放射線 性酸產生劑’通常使用採用醌二疊氮化合物的組成物,但 使用該驅二#氮化合物係成爲成本高的主要原因。 此外’作爲半導體密封用材料、半導體底層塡料用材 料' 半導體保護膜用材料、半導體層間絕緣膜用材料、電 路基材用材料、平坦化材料、電路基板保護用材料、抗蝕 劑用材料、抗鍍敷劑用材料' 液晶密封用材料或發光二極 體兀件密封用材料,也沒有能短時間獲得耐熱性黏附性 和電絕緣性等優異的硬化膜的感放射線性組成物(參照 US5385955A)。 先前技術文獻 專利文獻 專利文獻丨.日本特開2000- 1648號公報 專利文獻2 ·日本特開2006 — 1 78436號公報 201131302 專利文獻3:美國專利5385955A 【發明內容】 本發明是基於該實情而做出的,其目的在於提供一種 具有形成目則的保護膜等的材料所必須的圖案形成性,所 得硬化物除了透明性和黏附性以外,還具有高折射率,且 具有正型感放射線性的聚矽氧烷類感放射線性組成物、由 該組成物形成的硬化物、和它們的形成方法。 此外’其目的還在於提供一種藉由用作半導體密封用 材料、半導體底層塡料用材料、半導體保護膜用材料、半 導體層間絕緣膜用材料、電路基材用材料、平坦化材料、 電路基板保護用材料、抗蝕劑用材料、抗鏟敷劑用材料、 液晶密封用材料或發光二極體元件密封用材料等,而能在 短時間內獲得耐熱性、黏附性和電絕緣性等優異的硬化膜 的感放射線性組成物。 用於解決上述課題的發明爲一種感放射線性組成物, 其含有: [A]矽氧烷聚合物、 [B ]金屬氧化物顆粒、和 [C]感放射線性酸產生劑或感放射線性鹼產生劑, 上述[B]金屬氧化物顆粒爲選自銘、銷、駄、幹、姻、 錫、銻和铈所構成的群組中的至少一種金屬的氧化物顆粒。 該感放射線性組成物藉由含有上述各成分,從而具有 高的圖案形成性,所得硬化物可具有高的透明性和黏附 201131302 性。尤其是根據該感放射線性組成物,藉由含有上述種類 的金屬氧化物顆粒作爲[B ]成分,而能提高所得硬化物的折 射率。此外,該感放射線性組成物藉由使用上述氧化物顆 粒作爲[B]成分的金屬氧化物顆粒,而能體現圖案形成性高 的正型感放射線特性。 [A]砂氧院聚合物可以是下式(1)表示的水解性砂院化 合物的水解縮合物。 (R 1 ) n — S i — ( 0 R 2 ) 4 - η . (1) 在式(1)中’R1各自獨立地爲氫或碳數1〜20的非水解 性有機基團。R2各自獨立地爲氫、碳數1〜6的院基、碳數 1〜6的酿基或碳數6〜15的芳基。η爲〇〜3的整數。 [Α]矽氧烷聚合物藉由爲上式表示的水解性矽烷化 合物的水解縮合物’從而該感放射線性組成物具有高的塗 布性、感放射線度和圖案形成性,所得硬化物能具有更高 的透明性和黏附性。 該感放射線性組成物可以進一步含有[D ]分散劑。該感 放射線丨生組成物藉由含有[D ]分散劑’從而能均勻分散[β ] 成分的金屬氧化物顆粒、進一步提高塗布性、所得硬化膜 的黏附性能進一步提高,且折射率變得均勻母。 [D]分散劑較佳爲下式(2) ' (3)或(4)表示的化合物、聚 氧伸乙基烷基醚、聚氧伸乙基烷基苯基醚、烷基葡糖苷、 聚氧伸乙基脂肪酸酯、蔗糖脂肪酸酯、脫水山梨糖醇脂肪 酸醋、聚氧伸乙基脫水山梨糖醇脂肪酸酯或脂肪酸烷醇醯 201131302 胺 中 \)/ 2 ✓—\式在BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a radiation sensitive composition, a cured film formed of the composition, and a method of forming the cured film. [Prior Art] A liquid crystal display element or the like is subjected to an immersion treatment by a solvent, an acid or an alkaline solution or the like in the course of its preparation. Further, when the liquid crystal display element forms a wiring electrode layer by sputtering, the surface of the element is locally exposed to a high temperature. Therefore, in order to prevent the liquid crystal display element from being deteriorated or damaged by the immersion treatment or the high-temperature treatment using the solvent or the like, a protective film having resistance to these treatments is provided on the surface of the element. Further, in the liquid crystal display element or the like, an interlayer insulating film which is usually provided in a layer shape for insulating between lines or a spacer for stabilizing the interval (cell spacing) between the two substrates is provided. It is preferable that the number of steps for obtaining a desired pattern shape is small in the material of the protective film, the interlayer insulating film, the spacer, and the like (hereinafter also referred to as a protective film or the like), and that there is sufficient flatness. Therefore, a radiation sensitive composition is widely used. The material such as the protective film is required to have a substrate or a primer layer on which the protective film or the like is to be formed, and a layer formed on each layer or the like has high adhesion at the time of curing, has transparency, and is excellent in coatability and pattern formation property. performance. For the material for forming a protective film or the like which satisfies these characteristics, an acrylate-based resin is mainly used. In contrast, attempts have been made to use a polyoxyalkylene-based material which is superior in heat resistance and transparency to a acrylate-based resin as a component of the radiation-sensitive composition of 201131302 (see Japanese Patent Laid-Open Publication No. 2000-1648). Japanese Patent Laid-Open No. 2 006-178436). However, since the polyoxyalkylene-based material has a lower refractive index than the acrylate-based resin, when coated on the surface of another layer such as an ITO (indium tin oxide) transparent conductive film pattern, the refractive index difference becomes large, so that it exists. It is easy to see the ITO pattern, and the visibility of the liquid crystal display screen is lowered. Further, it is preferable to use a positive-type radiation-curable composition from the viewpoint of the advantage of forming a contact hole in the interlayer insulating film, for example. However, in the case of a positive-type radiation-sensitive linear composition in a polyoxyalkylene-based material, since a pattern formation property is high, a composition using a quinonediazide compound is generally used as a radiation-sensitive linear acid generator, but it is used. The nitrogen compound is the main reason for the high cost. In addition, 'material for semiconductor sealing, material for semiconductor underlayer material', material for semiconductor protective film, material for semiconductor interlayer insulating film, material for circuit substrate, planarizing material, material for circuit substrate protection, material for resist, The material for the plating resist, the material for liquid crystal sealing or the material for sealing the light-emitting diode, does not have a radiation-sensitive composition that can obtain a cured film excellent in heat resistance and electrical insulation for a short period of time (refer to US5385955A). ). PRIOR ART DOCUMENT PATENT DOCUMENT PATENT DOCUMENT PATENT DOCUMENT PATENT DOCUMENT PATENT DOCUMENT PATENT DOCUMENT PATENT DOCUMENT PATENT DOCUMENT PATENT DOCUMENT PATENT DOCUMENT PATENT DOCUMENT PATENT DOCUMENT PATENT DOCUMENT PATENT DOCUMENT PATENT DOCUMENT PATENT DOCUMENT The object of the present invention is to provide a pattern forming property which is necessary for a material having a protective film or the like which forms a target, and the obtained cured product has a high refractive index in addition to transparency and adhesion, and has a positive-type radiation linearity. A polyoxyalkylene-based radiation-sensitive composition, a cured product formed from the composition, and a method for forming the same. Further, the object of the invention is to provide a material for semiconductor sealing, a material for a semiconductor underlayer, a material for a semiconductor protective film, a material for a semiconductor interlayer insulating film, a material for a circuit substrate, a planarizing material, and a circuit substrate. The material, the material for the resist, the material for the anti-scraping agent, the material for liquid crystal sealing, or the material for sealing the light-emitting diode element can be excellent in heat resistance, adhesion, electrical insulation, etc. in a short time. A radiation sensitive composition of the cured film. The invention for solving the above problems is a radiation sensitive composition comprising: [A] a siloxane polymer, [B] metal oxide particles, and [C] a radioactive acid generator or a radiation-sensitive linear base. The generating agent, the above [B] metal oxide particles are oxide particles of at least one metal selected from the group consisting of Ming, Pin, Tantalum, Dry, Marriage, Tin, Antimony and Bismuth. The radiation sensitive composition has high pattern formability by containing the above respective components, and the obtained cured product can have high transparency and adhesion 201131302. In particular, according to the radiation sensitive composition, the refractive index of the obtained cured product can be improved by containing the metal oxide particles of the above kind as the component [B]. In addition, the radiation sensitive composition can exhibit positive radiation characteristics having high pattern formability by using the above oxide particles as the metal oxide particles of the [B] component. [A] The aerobics polymer may be a hydrolyzed condensate of a hydrolyzable sand compound represented by the following formula (1). (R 1 ) n — S i — ( 0 R 2 ) 4 - η . (1) In the formula (1), 'R1 is each independently hydrogen or a non-hydrolyzable organic group having 1 to 20 carbon atoms. R2 is each independently hydrogen, a carbon number of 1 to 6, a phenyl group having 1 to 6 carbon atoms or an aryl group having 6 to 15 carbon atoms. η is an integer of 〇~3. [Α] The oxime polymer is a hydrolysis condensate of the hydrolyzable decane compound represented by the above formula, and thus the radiation-sensitive composition has high coatability, radiation sensitivity, and pattern formability, and the obtained cured product can have Higher transparency and adhesion. The radiation sensitive composition may further contain a [D] dispersant. The radiation-induced twin composition can uniformly disperse the metal oxide particles of the [β] component by containing the [D] dispersant, further improve the coating property, and further improve the adhesion property of the obtained cured film, and the refractive index becomes uniform. mother. The [D] dispersant is preferably a compound represented by the following formula (2) '(3) or (4), a polyoxyethylidene ether, a polyoxyethylidene ether, an alkyl glucoside, Polyoxyethylene ethyl ester, sucrose fatty acid ester, sorbitan fatty acid vinegar, polyoxyethylene ethyl sorbitan fatty acid ester or fatty acid alkanol 201131302 amine \) / 2 ✓ -\

R3< 獨 ΙΗ)自ΟΜΠΡ——ο 丨各 3 R ⑵ Η Q C 是地 立 〇 2 Η (CH2CH2〇)p—CH2CH2O—。P 爲 8 〜10,q 爲 12 〜16,x 爲 1 〜3的整數。 ——(CH2CH2NCH2CH2NH)r—— (3) ch2ch2nh——(cch2ch2Ch2ch2ch2)s—9R3< 独ΙΗ)自ΟΜΠΡ——ο 丨 each 3 R (2) Η Q C is the ground 〇 2 Η (CH2CH2〇) p-CH2CH2O-. P is 8 to 10, q is 12 to 16, and x is an integer from 1 to 3. ——(CH2CH2NCH2CH2NH)r—— (3) ch2ch2nh——(cch2ch2Ch2ch2ch2)s—9

11 I Ο 〇 CC-|〇H2〇CHC6Hi311 I Ο 〇 CC-|〇H2〇CHC6Hi3

OH 在式(3)中 和s係選擇使藉由凝膠滲透層析求出的 聚苯乙烯換算數量平均分子量爲1 00 00〜4 000 0之數。 H—(OH4C2)u—(OH6C3)t .(C3H6〇)t—(C2H40)u—Η \ / M、 N—C2H4—N. (4)OH In the formula (3) and the s system, the polystyrene-converted number average molecular weight determined by gel permeation chromatography is from 00 to 4,000. H—(OH4C2)u—(OH6C3)t .(C3H6〇)t—(C2H40)u—Η \ / M, N—C2H4-N. (4)

H—(OH4C2)u—(〇H6C3)t (C3H60)t—(C2H40)u—H (在式(4)中,t和u係選擇,使藉由凝膠滲透層析求出 的聚苯乙烯換算數量平均分子量爲1000〜30000之數。 根據該感放射線性組成物,藉由使[D]成分的分散劑爲 上述化合物,而具有正型感放射線特性,能體現出更高的 圖案形成性。 本發明的感放射線性組成物較佳用作液晶顯示元件用 的保護膜、層間絕緣膜或隔片、半導體用的保護膜或層間 絕緣膜等形成圖案的硬化膜,這些硬化膜的形成方法包括: 201131302 (1) 在基板上形成感放射線性組成物之塗膜的步驟、 (2) 在步驟(1)中形成的塗膜的至少一部分中照射放射 線的步驟、 (3) 使在步驟(2)中照射了放射線的塗膜顯影的步驟、和 (4) 加熱在步驟(3)中顯影的塗膜的步驟。 在該方法中,使用具有優異圖案形成性的上述感放射 線性組成物,藉由利用感放射線性的曝光、顯影而形成圖 案,從而能容易地形成具有微細精巧圖案的各硬化膜。 因此,由本發明感放射線性組成物形成的圖案形成的 硬化膜除了透明性、黏附性以外,還具有高折射率,因此 能提高液晶顯示畫面的目視確認性,能適合用作液晶顯示 元件等之材料。此外,由本發明的感放射線性組成物形成 的經圖案形成的硬化膜由於具有高的透明性、黏附性、高 折射率性質,因此還適合用作半導體用的保護膜或層間絕 緣膜等的材料。 此外’藉由將本發明的感放射線性組成物用作半導體 密封用材料、半導體底層塡料用材料、電路基材用材料、 平坦化材料、電路基板保護用材料、抗蝕劑用材料、抗鍍 敷劑用材料或液晶密封用材料等,從而能在短時間內獲得 耐熱性、黏附性和電絕緣性等優異的硬化膜。 如上所述’本·發明的感放射線性組成物藉由含有上述 [A]〜[C]成分’從而具有高的圖案形成性,且由該組成物 獲得的硬化物除了高的透明性、黏附性以外,還具有高折 201131302 射率。此外,本發明的感放射線性組成物藉由含有[D]成分 的分散劑’從而能進一步提高塗布性和正型的感放射線特 性。因此’由本發明的感放射線性組成物形成的圖案化硬 化膜除了高的透明性、黏附性以外,還具有高折射率,因 此能適合用作液晶顯示元件用的各硬化膜、半導體用的各 硬化膜、LED用透鏡等各材料。 此外’藉由將本發明的感放射線性組成物用作半導體 密封用材料、半導體底層塡料用材料、電路基材用材料、 平坦化材料、電路基板保護用材料、抗蝕劑用材料、抗鍵 敷劑用材料或液晶密封用材料等,從而能在短時間內獲得 耐熱性、黏附性和電絕緣性等優異的硬化膜。 【實施方式】 本發明的感放射線性組成物含有[A ]矽氧烷聚合物、[B ] 金屬氧化物顆粒、[C ]感放射線性酸產生劑或感放射線性鹼 產生劑,根據需要’還含有[D]分散劑和其他任意成分。 [A]成分:矽氧烷聚合物 [A]成分的矽氧烷聚合物只要是具有矽氧烷鍵的化合 物的聚合物’就沒有特別的限定。該[A]成分係進行水解縮 合,形成硬化物。 以[A]成分的矽氧烷聚合物而言,較佳爲上式(1)表示 的水解性矽烷化合物的水解縮合物。 本案中所謂的水解性矽烷化合物,通常是指在沒有觸 媒、過量水的存在下’在室溫(約25t: 約l〇crc的溫度 -10- 201131302 範圍內進行加熱,從而水解產生矽烷醇基的基團,或是具 有能形成矽氧烷縮合物的“水解性基團”的化合物。此 外,所謂的“非水解性基團”,是指在該水解條件下’不 會引起水解或縮合,穩定存在的基團。 在上式U)表示的水解性矽烷化合物的水解反應中,部 分水解性基團可以以未水解的狀態殘留。其中所謂的“水 解性矽烷化合物的水解縮合物”是指水解的矽烷化合物的 部分矽烷醇基團之間反應、縮合的水解縮合物。 作爲上述R1表示的碳數爲1〜20的非水解性有機基 團’可以列舉碳數1〜20的未取代、或被1個以上乙烯基、 (甲基)丙烯醯基或環氧基取代的烷基、碳數6〜20的芳基、 碳數7〜20的芳烷基等。這些基團可以爲直鏈狀、支鏈狀 或環狀’在同一分子內存在多個R1時,還可以是它們的組 合。此外’ R1還可以包含具有雜原子的結構單元。以該結 構單元而言’可以列舉例如醚、酯、硫醚等。 以上述R2表示的基團而言,從水解容易性的觀點來看, 較佳爲氫或碳數爲1〜6的烷基,特佳爲氫、甲基或乙基。 此外,下標n爲0〜3的整數,但更佳爲〇〜2的整數, 特佳爲0或1’最佳爲1。在η爲〇〜2的整數的情況下, 能更容易地進行水解、縮合反應,結果[Α]成分硬化反應的 速度進一步提高’此外’能提高該組成物在顯影後的加熱 步驟中的耐熔融性。 作爲上式(1)表示的水解性矽烷化合物,可以列舉被4 -11- 201131302 個水解性基團取代的矽烷化合物、被1個非水解性基g Μ 3個水解性基團取代的砂院化合物、被2個非水解丨生基團 和2個水解性基團取代的矽烷化合物、被3個非水解,丨生基 團和1個水解性基團取代的矽烷化合物、或它們的混合物。 以這樣的上式(1)表示的水解性矽烷化合物的具體例 而言,係 以被4個水解性基團取代的矽烷化合物而言,可以列 舉四甲氧基矽烷、四乙氧基矽烷、四丁氧基矽烷、四苯氧 基矽烷、四苄氧基矽烷、四正丙氧基矽烷、四異丙氧基砂 烷等; 作爲被1個非水解性基團和3個水解性基團取代的砂 烷化合物’可以列舉甲基三甲氧基矽烷 '甲基三乙氧基砂 烷、甲基三異丙氧基矽烷、甲基三丁氧基矽烷、乙基三甲 氧基矽烷、乙基三乙氧基矽烷、乙基三異丙氧基矽烷、乙 基三丁氧基矽烷、丁基三甲氧基矽烷、苯基三甲氧基矽烷、 苯基三乙氧基矽烷、乙烯基三甲氧基矽烷、乙烯基三乙氧 基砂垸、乙稀基三正丙氧基矽烷、3 一甲基丙烯醯氧基丙基 三甲氧基砂院、3 —甲基丙烯醯氧基丙基三乙氧基矽烷、3 _丙稀醯氧基丙基三甲氧基矽烷、3 一丙烯醯氧基丙基三乙 氧基砂院、r -環氧丙氧基丙基三甲氧基矽烷、7 -環氧 丙氧基丙基三乙氧基矽烷' $ _(3,4 一環氧環己基)乙基三 甲氧基矽烷等; 以被2個非水解性基團和2個水解性基團取代的矽烷 -12- 201131302 化合物而言’可以列舉二甲基二甲氧基矽烷、二苯基二甲 氧基砍烷、二丁基二甲氧基矽烷等; 以被3個非水解性基團和1個水解性基團取代的矽烷 化合物而言’可以列舉三丁基甲氧基矽烷、三甲基甲氧基 砂院、三甲基乙氧基矽烷、三丁基乙氧基矽烷等。 在追些上式(1)表示的水解性矽烷化合物中,較佳爲被 4個水解性基團取代的矽烷化合物(n = 〇)和被1個非水解性 基團和3個水解性基團取代的矽烷化合物(n=1),特佳爲 被1個非水解性基團和3個水解性基團取代的矽烷化合物 (n = 1) °作爲該較佳的水解性矽烷化合物的具體例,可以 列舉四乙氧基矽烷、甲基三甲氧基矽烷、甲基三乙氧基矽 烷、甲基三異丙氧基矽烷、甲基三丁氧基矽烷、苯基三甲 氧基矽烷、乙基三甲氧基矽烷、乙基三乙氧基矽烷、乙基 二異丙氧基矽烷、乙基三丁基矽烷、丁基三甲氧基矽烷、 r —環氧丙氧基丙基三甲氧基矽烷、3一甲基丙烯醯氧基丙 基二甲氧基矽烷、3 —甲基丙烯醯氧基丙基三乙氧基矽烷。 k水解匣矽院化合物可以單獨使用—種,也可以將兩種以 上組合使用。 使上式(1 )表示的水解性矽烷化合物水解、縮合的條件 只要使上式U)表示的水解性矽烷化合物的至少一部分水 解’將水解性基團轉化爲矽烷醇S,引起縮合反應,就沒 有特別的限定’作爲〜個例子,可以如下實施。 在上式(1)表示的水解性矽烷化合物的水解、縮合中使 -13- 201131302 用的水,較佳爲藉由逆滲透膜處理、離子交換處理、蒸餾 等方法而經純化的水。藉.由使用該純化水,而能抑制副g 應、提高水解的反應性。水的使用量相對於lmol上式(1) 表示的水解性矽烷化合物的水解性基團(_ OR2)的總量,較 佳爲0.1〜3mol,更佳爲0.3〜2mol,進一步更佳爲〇,5〜 1.5mol的量。藉由使用該量的水,從而能使水解、縮合的 反應速度最佳化。 以能在上式(1)表示的水解性矽烷化合物的水解、縮合 中使用的溶劑而言,沒有特別的限定,但可以列舉例如乙 二醇單烷基醚乙酸酯、二乙二醇二烷基醚、丙二醇單烷基 醚、丙二醇單烷基醚乙酸酯、丙酸酯類。在這些溶劑中, 特佳爲二乙二醇二甲基醚、二乙二醇乙基甲基醚、丙二醇 單甲醚、丙二醇單乙醚、丙二醇單甲醚乙酸酯或3 —甲氧 基丙酸甲酯。 上式(1)表示的水解性矽烷化合物的水解、縮合反應較 佳爲在酸觸媒(例如鹽酸、硫酸、硝酸、甲酸、草酸、乙酸、 三氟乙酸、三氟甲磺酸、磷酸、酸性離子交換樹脂、各種 路易士酸)、鹼觸媒(例如氨、一級胺類、二級胺類、三級 胺類、吡啶等含氮化合物;鹼性離子交換樹脂;氫氧化鈉 等氫氧化物;碳酸鉀等碳酸鹽;乙酸鈉等羧酸鹽;各種路 易士鹼)、或烷氧化物(例如锆烷氧化物、鈦烷氧化物 '鋁 烷氧化物)等觸媒的存在下進行。例如,以鋁烷氧化物而 言,可以使用四異丙氧基鋁。以觸媒的使用量而言,從促 -14- 201131302 進水解、縮合反應的觀點來看,相對於1 mol水解性砂院化 合物的單體,較佳爲l〇_6mol〜0.2mol,更佳爲qqoooi〜 0 · 1 m 〇1。 上式(1)表示的水解性矽烷化合物之水解、縮合中的反 應溫度和反應時間可以適當設定。例如,可以採用下述條 件。反應溫度較佳爲40〜20(TC,更佳爲50〜i5〇t。反應 時間較佳爲3 0分鐘〜2 4小時,更佳爲1〜12小時。藉由 採用該反應溫度和反應時間,而能最有效地進行水解、縮 合反應。在該水解、縮合中,可以在反應系統內一次添加 水解性矽烷化合物、水和觸媒以一階段進行反應,或者也 可以分多次向反應系統內添加水解性矽烷化合物、水和觸 媒’從而分多階段進行水解和縮合反應。另外,在水解、 縮合反應後’加入脫水劑,然後放入蒸發器中,從而由反 應系統內除去水和生成的醇。 上式(1)表示的水解性矽烷化合物的水解縮合物的分 子量採用在移動相中使用四氫呋喃的 G PC (凝膠滲透層 析)’以聚苯乙烯換算的數量平均分子量的形式測定。此 外’水解縮合物的數量平均分子量通常較佳設爲在500〜 10000範圍內的値,進一步更佳設爲在1〇〇〇〜5〇〇〇範圍內 的値。藉由使水解縮合物的數量平均分子量的値在500以 上’能改善正型感放射線性組成物的塗膜之成膜性。另一 方面,藉由使水解縮合物的數量平均分子量的値在10000 以下,能防止感放射線性組成物的感放射線性降低。 -15- 201131302 [B ]成分:金屬氧化物顆粒 藉由在本發明的組成物中包含[B]成分的金屬氧化物 顆粒,從而能提高所得硬化物的折射率。 以[B]成分的金屬氧化物顆粒而言,可以是選自鋁、 锆、鈦、鋅、銦、錫、銻和铈所構成的群組中的至少一種 金屬的氧化物顆粒,其中’較佳爲錶、鈦或鋅的氧化物顆 粒,特佳爲鉻或鈦的氧化物顆粒。這些物質可以單獨使用 一種’也可以將兩種以上組合使用。此外,以該金屬氧化 物顆粒而言’也可以是上述金屬的複合氧化物顆粒。以該 複合氧化物顆粒而言,可以列舉例如ΑΤΟ(銻-錫氧化 物)、ΙΤ0(銦—錫氧化物)、ΙΖ0(銦一鋅氧化物)等。以這些 金屬氧化物顆粒而言,可以使用市售的例如c . I.化成股份 有限公司Nanotek等。 藉由使用上述種類的顆粒作爲[B]成分的金屬氧化物 顆粒,該感放射線性組成物能體現出具有高圖案形成性的 正型感放射線性特性。藉由使用上述種類的金屬氧化物顆 粒,從而具有正型感放射線特性的理由尙未確定,但認爲 是由於例如藉由紫外線等放射線的照射,上述金屬氧化物 顆粒的表面作用如光觸媒,覆蓋金屬氧化物顆粒的[A]成分 的矽氧烷聚合物等發生分解,組成物產生熔融之故等。 此外,以在使用上述較佳的氧化物顆粒(锆、鈦和鋅) 時,能進一步提高正型的圖案形成性的理由而言,係尙未 確定,但認爲是這些金屬氧化物的光催化能力高所影響 -16- 201131302 的。此外,在作爲特佳爲的金屬,使用鉻或鈦的情況下, 能獲得更高的折射率,此外,能提高正型的圖案形成性。 藉由使用锆或鈦’從而能進一步提高折射率的理由尙未確 定,但認爲是由於陰電性低,因此顆粒內的極化高,結果 折射率提高。因此’以[B]成分的金屬氧化物顆粒而言,較 佳爲陰電性爲1.7以下的金屬氧化物顆粒,特佳爲陰電性 爲1.6以下的金屬氧化物顆粒。另外,該陰電性使用鮑林 値。 對該金屬氧化物顆粒的形狀沒有特別的限定,可以是 球狀或不定形的’可以是中空顆粒、多孔顆粒、核殼型顆 粒等。此外’藉由動態光散射法求出的該金屬氧化物顆粒 的數均粒徑較佳爲5nm〜200nm,更佳爲5nm〜100nm,特 佳爲10nm〜80nm。該金屬氧化物顆粒的數量平均粒徑如果 不足5 n m,則硬化膜的硬度恐怕會降低,如果超過2 0 0 n m, 則硬化膜的混濁度恐怕會升高。 以該金屬氧化物顆粒的混合量而言,沒有特別的限 定’但相對於100質量份[A]成分的矽氧烷聚合物,較佳爲 0.1質量份〜50質量份,特佳爲1質量份〜20質量份。金 屬氧化物顆粒的混合量如果爲0.1質量份以下,則所得硬 化物的折射率提高性不高。相反地,金屬氧化物顆粒的混 合量如果超過1 00質量份,則塗布性降低,此外,所得硬 化膜的混濁度恐怕會升高。 該金屬氧化物顆粒的比表面積(根據使用氮的BET比 -17- 201131302 表面積測定法)較佳爲10m2/g〜l〇〇〇m2/g,更佳爲l〇〇m2/g 〜5 00m2/g。藉由使該金屬氧化物顆粒的比表面積在上述範 圍內’從而能有效體現上述光觸媒的作用,發揮出更高的 期望的感放射線特性。 [C ]成分:感放射線性酸產生劑或感放射線性鹼產生劑 [C ]成分的感放射線性酸產生劑或感放射線性鹼產生 劑係定義爲藉由照射放射線,從而用爲作[A]成分的矽氧烷 聚合物縮合、硬化反應時的觸媒的,能放出酸性活性物質 或鹼性活性物質的化合物。另外,以爲了分解[C ]成分,產 生酸性活性物質的陽離子或鹼性活性物質的陰離子而照射 的放射線而言’可以列舉可見光、紫外線、紅外線、X射 線、〇:射線、/3射線、7射線等。在這些射線中,由於具 有一定的能量等級,能實現快的硬化速度,且照射裝置較 爲廉價並較小,因此較佳使用紫外線。 另外,根據該感放射線性組成物,藉由使用上述物質 作爲[B]成分的金屬氧化物顆粒,從而無需使用特定的物質 作爲[C]成分的感放射線性酸產生劑或感放射線性鹼產生 劑’就能發揮正型的闻圖案形成性。尤其是通常以正型的 聚矽氧烷型感放射線性組成物而言,酸產生劑往往使用醌 二疊氮化物’根據該感放射線性組成物,如上所述地藉由 使用規定的物質作爲[B ]成分的金屬氧化物顆粒,從而無需 使用特定的物質作爲[C]成分的感放射線性酸產生劑或感 放射線性鹼產生劑,就能發揮正型的高圖案形成性。 -18- 201131302 以[c ]成分的感放射線性酸產生劑而言’可以列舉二苯 基碘鹽、三苯基锍鹽、锍鹽、苯并噻唑鑰鹽、銨鹽、錢鹽、 四氫噻吩鎗鹽等鏺鹽、硫醯亞胺錶化合物。另外,醌二疊 氮化物也是藉由放射線而產生酸的感放射線性酸產生劑。 然而,產生的酸是酸性度低的羧酸,以縮合、硬化反應時 的觸媒而言並不充分。因此,以[C]成分的感放射線性酸產 生劑而言,較佳爲醌二疊氮化物以外的物質。 以二苯基碘鹽的例子而言,可以列舉二苯基碘四氟硼 酸鹽、二苯基碘六氟膦酸鹽、二苯基碘六氟砷酸鹽、二苯 基碘三氟甲磺酸鹽、二苯基碘三氟乙酸鹽、二苯基碘對甲 苯磺酸鹽、二苯基碘丁基參(2,6_二氟苯基)硼酸鹽、4 —甲 氧基苯基苯基澳四氟硼酸鹽、雙(4-三級丁基苯基)職四氟 硼酸鹽、雙(4 一三級丁基苯基)碘六氟砷酸鹽、雙(4-三級 丁基苯基)碘三氟甲磺酸鹽、雙(4 -三級丁基苯基)碘三氟 乙酸鹽、雙(4 —三級丁基苯基)碘對甲苯磺酸鹽、雙(4 -三 級丁基苯基)碘樟腦磺酸等。 以三苯基毓鹽的例子而言,可以列舉三苯基锍三氟甲 磺酸鹽、三苯基鏑樟腦磺酸、三苯基毓四氟硼酸鹽、三苯 基鏑三氟乙酸鹽、三苯基鏑對甲苯磺酸鹽、三苯基锍丁基 參(2,6-二氟苯基)硼酸鹽等。 以鏑鹽的例子而言,可以列舉烷基鏑鹽、苄基毓鹽、 二苄基锍鹽、取代苄基銃鹽等。 以這些鏡鹽而言, -19 - 201131302 以烷基锍鹽而言,可以列舉例如4 -乙醯氧基苯基二 甲基锍六氟銻酸鹽、4-乙醯氧基苯基二甲基鏑六氟砷酸 鹽、二甲基一 4-(苄基氧基羰基氧基)苯基鏑六氟銻酸鹽、 二甲基—4一(苯甲醯基氧基)苯基锍六氟銻酸鹽、二甲基一 4 —(苯甲醯基氧基)苯基锍六氟砷酸鹽、二甲基一 3—氯一 4 一乙醯氧基苯基锍六氟銻酸鹽等; 以苄基毓鹽而言,可以列舉例如苄基-4 -羥基苯基甲 基锍六氟銻酸鹽、苄基- 4 -羥基苯基甲基锍六氟膦酸鹽、 4 一乙醯氧基苯基苄基甲基六氟銻酸鹽、苄基一 4一甲氧基 苯基甲基毓六氟銻酸鹽、苄基一 2—甲基-4-羥基苯基甲基 毓六氟銻酸鹽、苄基- 3-氯- 4-羥基苯基甲基锍六氟砷 酸鹽、4 -甲氧基苄基- 4-羥基苯基甲基锍六氟膦酸鹽等; 以二苄基鏑鹽而言,可以列舉二苄基- 4 -羥基苯基鏑 六氟銻酸鹽、二苄基一 4 一羥基苯基锍六氟膦酸鹽、4 一乙 醯氧基苯基二苄基六氟銻酸鹽、二苄基-4-甲氧基苯基毓 六氟銻酸鹽、二苄基一 3—氯一 4一羥基苯基锍六氟砷酸 鹽、二苄基_3_甲基—4一羥基一 5_三級丁基苯基鏑六氟 銻酸鹽、苄基-4-甲氧基苄基-4 -羥基苯基鏑六氟膦酸 鹽等; 以取代苄基锍鹽而言,可以列舉例如對氯苄基- 4 -羥 基苯基甲基鏑六氟銻酸鹽、對硝基苄基一 4-羥基苯基甲基 锍六氟銻酸鹽、對氯苄基一 4-羥基苯基甲基锍六氟膦酸 鹽、對氯苄基一 3 —甲基一 4-羥基苯基甲基鏑六氟銻酸 -20- 201131302 鹽、3,5—二氯苄基- 4 -羥基苯基甲基鏑六氟銻酸鹽、鄰 氯节基一 3—氯- 4 一經基苯基甲基鏡六氟鍊酸鹽等。 以苯并噻唑鑰鹽的例子而言,可以列舉3 一苄基苯并 噻唑鑰六氟銻酸鹽、3—苄基苯并噻唑鑰六氟膦酸鹽、3 — 苄基苯并噻唑鑰四氟硼酸鹽、3—(對甲氧基苄基)苯并噻唑 鑰六氟銻酸鹽、3-苄基_2 —甲基硫代苯并噻唑鎗六氟銻 酸鹽、3_苄基- 5 —氯硫代苯并噻唑鐡六氟銻酸鹽。 以四氫噻吩鑰鹽的例子而言,可以列舉丨-(4 -正丁氧 基萘-1_基)四氫噻吩鎗三氟甲磺酸鹽、1一(4-正丁氧基 萘一 1一基)四氫噻吩鑰九氟正丁磺酸鹽、1一(4 _正丁氧基 萘—1 一基)四氫噻吩鑰一1,1,2,2 —四氟一 2—(降莰一 2—基) 乙磺酸鹽、1— (4_正丁氧基萘_ 1—基)四氫噻吩鑰_2—(5 一三級丁氧基羰基氧基雙環[2.2.1]庚烷一 2—基)一 M,2,2 —四氟乙磺酸鹽、1— (4-正丁氧基萘_1 一基)四氫噻吩鑰 _ 2 — (6 —三級丁氧基鑛基氧基雙環[2.2.1]庚院—2 —基)_ 1,1,2,2—四氟乙磺酸鹽、1— (4,7 —二丁氧基1 一萘烯基)四 氫噻吩鑰三氟甲磺酸鹽等 以硫醯亞胺化合物的例子而言,可以列舉例如N -(三 氟甲基磺醯氧基)丁二醯亞胺(商品名“ SI — 105 ” (Midon 化學股份有限公司製造))、N -(樟腦磺醯氧基)丁二醯亞胺 (商品名“ SI — 106” (Midori化學股份有限公司製造))、N _(4_甲基苯基磺醯氧基)丁二醯亞胺(商品名“ SI — 101” (Midori化學股份有限公司製造))、N_(2_三氟甲基苯基 -21 - 201131302 擴醯氧基)丁二醯亞胺、N — (4-氟苯基磺醯氧基)丁二醯亞 胺、N_ (二氟甲基擴醯氧基)鄰苯二醯亞胺、n_ (樟腦磺醯 氧基)鄰苯二醯亞胺、N - (2~三氟甲基苯基磺醯氧基)鄰苯 二_亞胺、N — (2_氟苯基擴醯氧基)鄰苯二酿亞胺、n -(三 氟甲基擴醯氧基)二苯基馬來醯亞胺(商品名“PI — 1〇5” (Midori化學股份有限公司製造))、N -(樟腦磺醯氧基)二苯 基馬來醯亞胺、4-甲基苯基磺醯氧基二苯基馬來醯亞胺、 N — (2 _三氟甲基苯基磺醯氧基)二苯基馬來醢亞胺、n_ (4 -氟苯基磺醯氧基)二苯基馬來醯亞胺、N -(苯基磺醯氧基) 雙環[2.2.1]庚-5 -烯-2,3 -二羧酸醯亞胺(商品名“NDI —100” (Midori化學股份有限公司製造))、N - (4 -甲基苯 基磺醯氧基)雙環[2.2.1]庚一 5 -烯一 2,3_二羧酸醯亞胺 (商品名“NDI- 101”(Midori化學股份有限公司製造))、N —(三氟甲烷磺醯氧基)雙環[2.2.1]庚_ 5_烯一2,3_二羧 酸醯亞胺(商品名“NDI— 105” (Midori化學股份有限公司 製造))、N-(九氟丁烷磺醯氧基)雙環[2.2.1]庚一 5—烯— 2,3—二羧酸醯亞胺(商品名“NDI- 109”(Midori化學股份 有限公司製造))、N -(樟腦磺醯氧基)雙環[2.2.1]庚一 5_烯 一 2,3—二羧酸醯亞胺(商品名“NDI— 106” (Midori化學股 份有限公司製造))、N—(樟腦磺醯氧基)一 7_氧雜雙環 [2.2.1]庚一5—烯_2,3_二羧酸醯亞胺、^一(三氟甲基磺 醯氧基)—7—氧雜雙環[2.2.1]庚_ 5 -烯—2,3-二羧酸醯 亞胺、N— (4 -甲基苯基磺醯氧基)雙環[2.2.1]庚一 5 -烯一 -22- 201131302 2,3_二羧酸醯亞胺、N -(4_甲基苯基磺醯氧基)—7 —氧 雜雙環[2.2.1]庚一 5 —烯一 2,3 —二羧酸醯亞胺、N -(2 —三 氟甲基苯基擴醯氧基)雙環[2.2.1]庚—5_烯_ 2,3 —二殘酸 醯亞胺、N— (2-三氟甲基苯基磺醯氧基)一 7-氧雜雙環 [2.2.1]庚_5_烯_2,3~二羧酸醯亞胺、N—(4_氟苯基磺 醯氧基)雙環[2.2.1]庚~ 5_烯—2,3 —二羧酸醯亞胺、N — (4 一氟苯基磺醯氧基)—7 —氧雜雙環[2.2.1]庚—5—烯~ 2,3 —二羧酸醯亞胺' N —(三氟甲基磺醯氧基)雙環[2.2•丨]庚烷 —5,6 —氧基—2,3-二翔酸醯亞胺、N —(樟腦磺酿氧基)雙 環[2.2.1]庚烷-5,6-氧基-2,3 —二羧酸醯亞胺、N — (4~ 甲基苯基磺醯氧基)雙環[2.2.1]庚烷_ 5,6 -氧基一 2,3~二 羧酸醯亞胺、N -(2-三氟甲基苯基磺醯氧基)雙環[2.2,1;] 庚烷一 5,6_氧基一 2’3 —二羧酸醯亞胺、N -(4一氟苯基石黃 酿氧基)雙環[2.2.1]庚院—5,6 —氧基—2,3 —二翔酸醯亞 胺、N -(三氟甲基磺醯氧基)萘基二羧酸醯亞胺(商品名 "NAI- 105”(Midori化學股份有限公司製造))、N —(樟腦 磺醯氧基)萘基二羧酸醯亞胺(商品名“ΝΑΙ— 106” (Mid〇ri 化學股份有限公司製造))、N - (4-甲基苯基磺醯氧基)蔡 基二羧酸醯亞胺(商品名“ΝΑΙ— 10Γ (Midori化學股(分_ 限公司製造))'N -(苯基磺醯氧基)萘基二羧酸醯亞胺(商品 名“ NAI— 100”(Midori化學股份有限公司製造))、n〜(2_ 三氟甲基苯基磺醯氧基)萘基二羧酸醯亞胺、N—(4~氣$ 基磺醯氧基)萘基二羧酸醯亞胺、N -(五氟乙基磺醯氧基) -23- 201131302 萘基二羧酸醯亞胺、N —(七氟丙基磺醯氧基)萘 亞胺、N -(九氟丁基磺醯氧基)萘基二羧酸醯S “ ΝΑΙ — 109” (Midori化學股份有限公司製造): 磺醯氧基)萘基二羧酸醯亞胺、N—(丁基磺醯I 羧酸醯亞胺(商品名“NAI- 1 004(Midori化學 司製造))、N-(戊基磺醯氧基)萘基二羧酸醯亞 基磺醯氧基)萘基二羧酸醯亞胺、N -(庚基磺I 二羧酸醯亞胺、N —(辛基磺醯氧基)萘基二羧® 一(壬基磺醯氧基)萘基二羧酸醯亞胺等。 在這些感放射線性酸產生劑中,從提高感 成物的感放射線度和所得硬化物的黏附性的觀 佳使用三苯基鏑鹽、鏑鹽、苯并噻唑鎗鹽、四匍 颯醯亞胺化合物。其中,特佳爲使用三苯基鏑 鹽、三苯基鏑樟腦磺酸、4 —乙醯氧基苯基二甲 酸鹽、苄基_4_羥基苯基甲基毓六氟銻酸鹽 基苯基苄基甲基鏑六氟銻酸鹽、二节基_4_經 氟銻酸鹽、4_乙醯氧基苯基苄基甲基鏑六氟| 苄基苯并噻唑鑰六氟銻酸鹽、苄基—4 -經基苯 氟膦酸鹽、1_ (4 一正丁氧基萘—1—基)四氣噻 磺酸鹽、1— (4,7 —二丁氧基—丨―萘烯基)四氫 甲磺酸鹽、N_ (三氟甲基磺醯氧基)萘基二殘酸 以感放射線性鹼產生劑的例子而言,可以 渡金屬錯合物、鄰硝基苄基胺基甲酸類、 基二羧酸醯 5胺(商品名 |、N—(乙基 I基)萘基二 股份有限公 胺、N —(己 盛氧基)萘基 t醯亞胺、N 放射線性組 點來看,較 ,噻吩鑰鹽、 三氟甲磺酸 基鏡六氟砷 > 4 _乙醯氧 基苯基疏六 弟酸鹽、3 -基甲基鏡六 吩鑰三氟甲 噻吩鑰三氟 ?醯亞胺。 列舉鈷等過 α,α —二甲基一 -24- 201131302 3,5—二甲氧基苄基胺基甲酸類、醯氧基亞胺類等。 以過渡金屬錯合物的例子而言,可以列舉溴五氨鈷過 氯酸鹽 '溴五甲胺鈷過氯酸鹽、溴五丙胺鈷過氯酸鹽、六 氨鈷過氯酸鹽'六甲胺鈷過氯酸鹽、六丙胺鈷過氯酸鹽等。 以間硝基苄基胺基甲酸鹽類的例子而言,可以列舉 [[(2_硝基苄基)氧基]羰基]甲胺、[[(2_硝基苄基)氧基]羰 基]丙胺、[[(2—硝基苄基)氧基]羰基]己胺、[[(2 —硝基苄 基)氧基]羰基]環己胺、[[(2-硝基苄基)氧基]羰基]苯胺、 [[(2 —硝基苄基)氧基]羰基]哌啶、雙[[(2 —硝基苄基)氧基] 擬基]六亞甲基二胺、雙[[(2—硝基苄基)氧基]羰基]苯二 胺、雙[[(2~硝基苄基)氧基]羰基]甲苯二胺、雙[[(2_硝基 节基)氧基]羰基]二胺基二苯基甲烷、雙[[(2_硝基苄基)氧 基]羰基]哌阱、[[(2,6 -二硝基苄基)氧基]羰基]甲胺、[[(2,6 一二硝基苄基)氧基]羰基]丙胺、[[(2,6—二硝基苄基)氧基] 毅基]己胺、[[(2,6-二硝基苄基)氧基]羰基]環己胺'[[(2,6 —二硝基苄基)氧基]羰基]苯胺、[[(2,6_二硝基苄基)氧基] 親基]哌啶、雙[[(2,6—二硝基苄基)氧基]羰基]六亞甲基二 胺、雙[[(2,6—二硝基苄基)氧基]羰基]苯二胺、雙[[(2,6 — 一硝基节基)氧基]擬基]甲苯二胺、雙[[(2,6_二硝基节基) 氧基]羰基]二胺基二苯基甲烷、雙[[(2,6一二硝基苄基)氧基 羰基]哌哄等。 以 —二甲基一3,5 —二甲氧基苄基胺基甲酸類的 例子而言’可以列舉[[(α,α -二甲基_3,5_二甲氧基节 -25- 201131302 基)氧基]羰基]甲胺、[[(α,α —二甲基一3,5 —二甲氧基苄 基)氧基]羰基]丙胺、[[(α,α:—二甲基— 3,5 —二甲氧基苄 基)氧基]羰基]己胺、[[(〇:,〇: -二甲基—3,5 —二甲氧基苄 基)氧基]羰基]環己胺、[[(α,α —二甲基一 3, 5 —二甲氧基 苄基)氧基]羰基]苯胺、[[(α,α —二甲基一 3,5 —二甲氧基 苄基)氧基]羰基]哌啶、雙[[(α,α —二甲基_3,5 -二甲氧 基苄基)氧基]擬基]六亞甲基二胺、雙[[(α,α 一二甲基— 3,5-二甲氧基苄基)氧基]羰基]苯二胺、雙[[(α,α —二甲 基_3,5_二甲氧基苄基)氧基]羰基]甲苯二胺、雙[[(α,α 一二甲基一3,5 —二甲氧基苄基)氧基]羰基]二胺基二苯基 甲烷 '雙[[(α,α _二甲基一3,5 —二甲氧基苄基)氧基]羰基] 哌阱等。 作爲醯氧基亞胺類的例子,可以列舉丙醯基苯乙酮 肟、丙醯基二苯酮肟、丙醯基丙酮肟、丁醯基苯乙酮肟、 丁醯基二苯酮肟、丁醯基丙酮肟、己二醯基苯乙酮肟、己 二醯基二苯酮肟、己二醯基丙酮肟、丙烯醯基苯乙酮肟、 丙烯醯基二苯_聘、丙烯醯基丙酮肟等。 以感放射線性鹼產生劑的其他例子而言,可以列舉2 -硝基苄基環己基胺基甲酸、0—胺基甲醯基羥基醯胺等。 [C]成分的感放射線性酸產生劑或感放射線性鹼產生 劑係使用酸或鹼的任一種,可以單獨使用一種,也可以將 兩種以上混合使用。[C]成分的使用量相對於100質量份[Α] 成分’較佳爲0.1質量份〜20質量份,更佳爲1質量份〜 -26- 201131302 10質量份。藉由使[c]成分的使用量爲0.1質量份〜20質量 份,從而能獲得感放射線度和形成的硬化物黏附性的平衡 良好的,優異的感放射線性組成物’此外,在塗膜的形成 步驟中能防止析出物的產生’能容易地形成塗膜。 [D ]成分:分散劑 在本發明的感放射線性組成物中,除了 [A]〜[C]成分 以外,較佳還含有[D]成分的分散劑。該感放射線性組成物 藉由進一步含有[D]分散劑,從而能均勻分散[B]金屬氧化 物顆粒,提高塗布性,能提高所得硬化物的黏附性,折射 率能沒有偏差地均勻提高。 以[D]成分的分散劑而言,可以列舉非離子類分散劑、 陽離子類分散劑、陰離子類分散劑等。從提高正型感放射 線性特性和圖案形成性的觀點來看,較佳爲非離子類分散 劑。該感放射線性組成物藉由使用非離子類分散劑作爲[D] 成分的分散劑,從而能提高正型感放射線性特性和圖案形 成性的理由尙未確定,但認爲是如下理由。非離子類分散 劑具有極化的共價鍵部分。認爲[B]成分的金屬氧化物顆粒 由於非離子類分散劑之極化的共價鍵部分容易藉由放射線 和金屬氧化物的光催化作用而斷裂,因此在照射放射線 時,作爲正型的組成物的曝光部分熔融,顯示出高的圖案 形成性。 以該非離子類分散劑而言,較佳爲聚氧乙烯烷基磷酸 酯、高分子量聚羧酸之醯胺基胺鹽、乙二胺PO — EO縮合 -27- 201131302 物、聚氧乙烯烷基醚、聚氧乙烯烷基苯基醚、烷基葡糖苷、 聚氧乙烯脂肪酸酯、蔗糖脂肪酸酯、脫水山梨糖醇脂肪酸 酯、聚氧乙烯脫水山梨糖醇脂肪酸酯或脂肪酸烷醇醯胺。 作爲聚氧乙稀院基磷酸醋,較佳上式(2)表示的物質。 作爲上式(2)表示的分散劑的市售品,可以列舉楠本化成股 份有限公司製造的PLAADED 151等。藉由該聚氧乙烯烷基 磷酸酯’能進一步提高金屬氧化物顆粒的均勻分散性。 以高分子量聚羧酸之醯胺基胺鹽而言,較佳爲上式(3) 表示的物質。以上式(3)表示的分散劑的市售品而言,可以 列舉楠本化成股份有限公司製造的PL A ad ED21 1等。藉由 該高分子量聚羧酸之醯胺基胺鹽,也能進一步提高金屬氧 化物顆粒的均勻分散性。 以乙二胺P〇— EO縮合物而言,較佳上式(4)表示的物 質。以上式(4)表示的分散劑的市售品而言,可以列舉旭電 化工業股份有限公司製造的ADEKA PLURONIC TR— 701、 TR— 702、TR— 704等。藉由該乙二胺PO-EO縮合物,倉g 進一步提高金屬氧化物顆粒的均勻分散性。 以聚氧乙烯烷基醚而言,較佳爲下式(5)表示的物質。 R4一Ο——(CH2CH20)v——Η (5) 在式(5)中’ R4是碳數1〜20的烷基。ν是1〇〜300的 整數。以R4而言,特佳爲碳數1〜12的烷基。以上式(5) 表示的分散劑的市售品而言,可以列舉ADEKA股份有限公 司製造的ADEKATOL TN/SO/UA系列等。 -28- 201131302 以聚氧乙烯烷基苯基醚而言,較佳爲下式(6)表示的物 質。H—(OH4C2)u—(〇H6C3)t (C3H60)t—(C2H40)u—H (In formula (4), t and u are selected to make polyphenylene obtained by gel permeation chromatography The number-average molecular weight in terms of ethylene is from 1,000 to 30,000. According to the radiation-sensitive composition, the dispersant of the component [D] is a compound having a positive radiation characteristic, thereby exhibiting higher pattern formation. The radiation sensitive composition of the present invention is preferably used as a protective film for a liquid crystal display element, an interlayer insulating film or a separator, a protective film for a semiconductor, or an interlayer insulating film to form a patterned cured film, and the formation of these cured films. The method includes: 201131302 (1) a step of forming a coating film of a radiation-sensitive composition on a substrate, (2) a step of irradiating radiation in at least a part of the coating film formed in the step (1), and (3) performing the step (2) a step of developing a coating film irradiated with radiation, and (4) a step of heating the coating film developed in the step (3). In the method, the above-described radiation-sensitive composition having excellent pattern formability is used. By using a radiation-sensitive exposure By forming a pattern, each of the cured films having a fine and fine pattern can be easily formed. Therefore, the cured film formed by the pattern formed of the radiation sensitive composition of the present invention has a high refractive index in addition to transparency and adhesion, and thus can The visual confirmation of the liquid crystal display screen can be suitably used as a material of a liquid crystal display element, etc. Further, the patterned cured film formed of the radiation sensitive composition of the present invention has high transparency, adhesion, and high refraction. It is also suitable as a material for a protective film or an interlayer insulating film for semiconductors, etc. Further, 'the radiation sensitive composition of the present invention is used as a material for semiconductor sealing, a material for semiconductor underlayer coating, and a circuit base. Materials for materials, planarizing materials, materials for protecting circuit boards, materials for resists, materials for plating resists, materials for liquid crystal sealing, etc., so that heat resistance, adhesion, electrical insulation, etc. can be obtained in a short time. Excellent cured film. As described above, the radiation sensitive linear composition of the present invention contains the above [A] to [C] In addition to having a high patterning property, the cured product obtained from the composition has a high refractive index 201131302 in addition to high transparency and adhesion. Further, the radiation sensitive composition of the present invention contains The dispersant of the component [D] can further improve the coating property and the positive radiation sensitivity. Therefore, the patterned cured film formed of the radiation sensitive composition of the present invention has high transparency and adhesion. The refractive index is suitable for each material such as a cured film for a liquid crystal display device, a cured film for a semiconductor, and a lens for an LED. Further, the radiation sensitive composition of the present invention is used as a material for semiconductor sealing. , semiconductor underlayer materials, circuit substrate materials, planarizing materials, circuit board protective materials, resist materials, anti-keying materials, liquid crystal sealing materials, etc., so that they can be obtained in a short time. A cured film excellent in heat resistance, adhesion, and electrical insulation. [Embodiment] The radiation sensitive composition of the present invention contains [A] decane polymer, [B] metal oxide particles, [C] sensitizing radioactive acid generator or sensitizing radioactive base generator, as needed. Also contains [D] dispersant and other optional ingredients. [A] component: the siloxane polymer of the [A] component is not particularly limited as long as it is a polymer of a compound having a siloxane bond. This component [A] is hydrolyzed and condensed to form a cured product. The oxime polymer of the component [A] is preferably a hydrolysis condensate of the hydrolyzable decane compound represented by the above formula (1). The hydrolyzable decane compound in the present case generally means that it is heated at room temperature (about 25 t: a temperature of about 10 〇 crc - 10 201131302 in the presence of no catalyst or excess water, thereby hydrolyzing to produce stanol a group of a group, or a compound having a "hydrolyzable group" capable of forming a hydrazine condensate. Further, the term "non-hydrolyzable group" means that under the hydrolysis conditions, 'no hydrolysis is caused or Condensation, a group which is stably present. In the hydrolysis reaction of the hydrolyzable decane compound represented by the above formula U), the partially hydrolyzable group may remain in an unhydrolyzed state. The "hydrolyzed condensate of a hydrolyzable decane compound" is a hydrolysis condensate which reacts and condenses between a partial stanol group of a hydrolyzed decane compound. The non-hydrolyzable organic group 'having a carbon number of 1 to 20 represented by the above R1' may be unsubstituted or substituted by one or more vinyl groups, (meth) acrylonitrile groups or epoxy groups. An alkyl group, an aryl group having 6 to 20 carbon atoms, an aralkyl group having 7 to 20 carbon atoms, and the like. These groups may be linear, branched or cyclic. When a plurality of R1 are present in the same molecule, they may also be a combination thereof. Further, 'R1 may further contain a structural unit having a hetero atom. The term "organic unit" may, for example, be an ether, an ester, a thioether or the like. The group represented by the above R2 is preferably hydrogen or an alkyl group having 1 to 6 carbon atoms, particularly preferably hydrogen, methyl or ethyl, from the viewpoint of easiness of hydrolysis. Further, the subscript n is an integer of 0 to 3, but more preferably an integer of 〇 〜 2, particularly preferably 0 or 1' is preferably 1. When η is an integer of 〇 〜 2, the hydrolysis and condensation reaction can be more easily performed, and as a result, the rate of the [Α] component hardening reaction is further improved, and "the addition" can improve the resistance of the composition in the heating step after development. Meltability. The hydrolyzable decane compound represented by the above formula (1) includes a decane compound substituted with 4 -11 to 201131302 hydrolyzable groups, and a sand courtyard substituted with one non-hydrolyzable group g Μ 3 hydrolyzable groups. A compound, a decane compound substituted with two non-hydrolyzed twin groups and two hydrolyzable groups, a decane compound substituted with three non-hydrolyzed, a neoplastic group and one hydrolyzable group, or a mixture thereof. In the specific example of the hydrolyzable decane compound represented by the above formula (1), a decane compound substituted with four hydrolyzable groups may, for example, be tetramethoxy decane or tetraethoxy decane. Tetrabutoxy decane, tetraphenoxydecane, tetrabenzyloxydecane, tetra-n-propoxy decane, tetraisopropoxy sulane, etc.; as a non-hydrolyzable group and three hydrolyzable groups The substituted squalane compound 'is exemplified by methyl trimethoxy decane 'methyl triethoxy octane, methyl triisopropoxy decane, methyl tributoxy decane, ethyl trimethoxy decane, ethyl Triethoxy decane, ethyl triisopropoxy decane, ethyl tributoxy decane, butyl trimethoxy decane, phenyl trimethoxy decane, phenyl triethoxy decane, vinyl trimethoxy矽, vinyl triethoxy sand, ethylene tri-n-propoxy decane, 3-methyl propylene methoxy propyl trimethoxy sand, 3-methyl propylene methoxy propyl triethoxy Base decane, 3- propylene methoxy propyl trimethoxy decane, 3- propylene methoxy propyl triethoxy sand , r-glycidoxypropyltrimethoxydecane, 7-glycidoxypropyltriethoxydecane' $ _(3,4-epoxycyclohexyl)ethyltrimethoxydecane, etc.; In the case of a decane-12-201131302 compound substituted with two non-hydrolyzable groups and two hydrolyzable groups, 'dimethyl dimethyl decane, diphenyl dimethoxy cetane, and dibutyl can be cited. a dimethoxy oxane or the like; a decane compound substituted with three non-hydrolyzable groups and one hydrolyzable group, which may be exemplified by tributyl methoxy decane, trimethyl methoxy sand, and top three Ethyl ethoxy decane, tributyl ethoxy decane, and the like. In the hydrolyzable decane compound represented by the above formula (1), a decane compound (n = fluorene) substituted with four hydrolyzable groups and one non-hydrolyzable group and three hydrolyzable groups are preferable. a group-substituted decane compound (n=1), particularly preferably a decane compound substituted with one non-hydrolyzable group and three hydrolyzable groups (n = 1) ° as a specific of the preferred hydrolyzable decane compound For example, tetraethoxy decane, methyl trimethoxy decane, methyl triethoxy decane, methyl triisopropoxy decane, methyl tributoxy decane, phenyl trimethoxy decane, and B may be mentioned. Trimethoxy decane, ethyl triethoxy decane, ethyl diisopropoxy decane, ethyl tributyl decane, butyl trimethoxy decane, r - glycidoxypropyl trimethoxy decane , 3-methacryloxypropyldimethoxydecane, 3-methylpropenyloxypropyltriethoxydecane. The k-hydrolyzed broth compound may be used singly or in combination of two or more. The conditions for hydrolyzing and condensing the hydrolyzable decane compound represented by the above formula (1) are as long as at least a part of the hydrolyzable decane compound represented by the above formula U) is hydrolyzed, and the hydrolyzable group is converted into stanol S to cause a condensation reaction. There is no particular limitation 'as an example, it can be implemented as follows. In the hydrolysis and condensation of the hydrolyzable decane compound represented by the above formula (1), water for use in -13 to 201131302 is preferably purified water by a method such as reverse osmosis membrane treatment, ion exchange treatment or distillation. borrow. By using this purified water, it is possible to suppress the reaction of the secondary g and improve the hydrolysis. The amount of water used is preferably 0. The total amount of the hydrolyzable group (_OR2) of the hydrolyzable decane compound represented by the above formula (1) is preferably 0. 1 to 3 mol, more preferably 0. 3~2mol, further better for 〇, 5~ 1. Amount of 5 mol. By using this amount of water, the reaction rate of hydrolysis and condensation can be optimized. The solvent to be used in the hydrolysis and condensation of the hydrolyzable decane compound represented by the above formula (1) is not particularly limited, and examples thereof include ethylene glycol monoalkyl ether acetate and diethylene glycol. Alkyl ether, propylene glycol monoalkyl ether, propylene glycol monoalkyl ether acetate, propionate. Among these solvents, particularly preferred are diethylene glycol dimethyl ether, diethylene glycol ethyl methyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monomethyl ether acetate or 3-methoxypropane. Methyl ester. The hydrolysis and condensation reaction of the hydrolyzable decane compound represented by the above formula (1) is preferably carried out in an acid catalyst (for example, hydrochloric acid, sulfuric acid, nitric acid, formic acid, oxalic acid, acetic acid, trifluoroacetic acid, trifluoromethanesulfonic acid, phosphoric acid, acidity). Ion exchange resin, various Lewis acids), alkali catalysts (such as ammonia, primary amines, secondary amines, tertiary amines, pyridine and other nitrogen-containing compounds; basic ion exchange resins; hydroxides such as sodium hydroxide ; a carbonate such as potassium carbonate; a carboxylate such as sodium acetate; a variety of Lewis bases; or an alkoxide (for example, a zirconium alkoxide, a titanium alkoxide 'aluminum alkoxide) or the like. For example, in the case of an aluminoxane, aluminum tetraisopropoxide can be used. In terms of the amount of the catalyst to be used, from the viewpoint of the hydrolysis and the condensation reaction, the monomer of the 1 mol hydrolyzable sand compound is preferably from 10 to 6 mol to 0. 2mol, more preferably qqoooi~ 0 · 1 m 〇1. The reaction temperature and reaction time in the hydrolysis and condensation of the hydrolyzable decane compound represented by the above formula (1) can be appropriately set. For example, the following conditions can be applied. The reaction temperature is preferably from 40 to 20 (TC, more preferably from 50 to i5 Torr. The reaction time is preferably from 30 minutes to 24 hours, more preferably from 1 to 12 hours. By using the reaction temperature and reaction time The hydrolysis and condensation reaction can be carried out most efficiently. In the hydrolysis and condensation, the hydrolyzable decane compound, water and catalyst can be added in one reaction in the reaction system in one stage, or can be divided into multiple reaction systems. Hydrolyzing decane compound, water and catalyst are added to carry out hydrolysis and condensation reaction in multiple stages. In addition, after hydrolysis and condensation reaction, 'dehydrating agent is added, and then placed in an evaporator to remove water from the reaction system and The molecular weight of the hydrolyzed condensate of the hydrolyzable decane compound represented by the above formula (1) is in the form of a polystyrene-equivalent number average molecular weight of G PC (gel permeation chromatography) using tetrahydrofuran in the mobile phase. Further, the number average molecular weight of the 'hydrolysis condensate is usually preferably set to 値 in the range of 500 to 10,000, and more preferably set to be in the range of 1 〇〇〇 to 5 〇〇〇.成. By making the number average molecular weight of the hydrolysis condensate 500 500 or more ′, the film formation property of the coating film of the positive sensitizing radiation composition can be improved. On the other hand, by the number average molecular weight of the hydrolysis condensate When the enthalpy is 10000 or less, the radiation-induced linearity of the radiation-sensitive composition can be prevented from being lowered. -15- 201131302 [B] Component: Metal oxide particles by containing the metal oxide particles of the [B] component in the composition of the present invention Thereby, the refractive index of the obtained cured product can be increased. The metal oxide particles of the [B] component may be selected from the group consisting of aluminum, zirconium, titanium, zinc, indium, tin, antimony and bismuth. At least one metal oxide particle, wherein 'preferably an oxide particle of a surface, titanium or zinc, particularly preferably an oxide particle of chromium or titanium. These may be used singly or in combination of two or more. Further, in the case of the metal oxide particles, 'the composite oxide particles of the above metals may be used. Examples of the composite oxide particles include ruthenium (锑-tin oxide) and ΙΤ0 (indium- Oxide), ΙΖ0 (indium-zinc-oxide), etc. in terms of the metal oxide particles, for example, a commercially available C.  I. Huacheng Co., Ltd. Nanotek and so on. By using the above-described kinds of particles as the metal oxide particles of the [B] component, the radiation-sensitive composition can exhibit positive-type radiation characteristics having high pattern formability. The reason why the positive-type radiation characteristics are used by using the above-described metal oxide particles is not determined. However, it is considered that the surface of the metal oxide particles acts as a photocatalyst, for example, by irradiation with radiation such as ultraviolet rays. The helium oxide polymer or the like of the [A] component of the metal oxide particles is decomposed, and the composition is melted. Further, in the case where the above preferred oxide particles (zirconium, titanium, and zinc) are used, the reason why the positive pattern formation property can be further improved is not determined, but is considered to be the light of these metal oxides. The high catalytic capacity is affected by -161-331. Further, in the case where chromium or titanium is used as the particularly preferable metal, a higher refractive index can be obtained, and positive pattern formation property can be improved. The reason why the refractive index can be further increased by using zirconium or titanium' is not determined, but it is considered that since the negative electrical property is low, the polarization in the particles is high, and as a result, the refractive index is improved. Therefore, it is preferable that the metal oxide particles of the [B] component have a cathode electrical property of 1. The metal oxide particles below 7 are particularly good for the cathode electrical property. 6 or less metal oxide particles. In addition, the negative electrical use of Pauling. The shape of the metal oxide particles is not particularly limited and may be spherical or amorphous, and may be hollow particles, porous particles, core-shell particles or the like. Further, the number average particle diameter of the metal oxide particles determined by the dynamic light scattering method is preferably from 5 nm to 200 nm, more preferably from 5 nm to 100 nm, particularly preferably from 10 nm to 80 nm. If the number average particle diameter of the metal oxide particles is less than 5 n m, the hardness of the cured film may be lowered. If it exceeds 200 nm, the turbidity of the cured film may increase. The amount of the metal oxide particles to be mixed is not particularly limited, but is preferably 0.% with respect to 100 parts by mass of the [A] component. 1 part by mass to 50 parts by mass, particularly preferably 1 part by mass to 20 parts by mass. If the amount of metal oxide particles is 0. When the amount is 1 part by mass or less, the refractive index of the obtained cured product is not high. On the other hand, when the amount of the metal oxide particles to be mixed exceeds 100 parts by mass, the coatability is lowered, and the turbidity of the obtained hardened film may be increased. The specific surface area of the metal oxide particles (the BET ratio -17 to 201131302 surface area measurement using nitrogen) is preferably 10 m 2 /g to 1 〇〇〇 m 2 /g, more preferably 1 〇〇 m 2 /g 〜 5 00 m 2 . /g. By making the specific surface area of the metal oxide particles within the above range, the action of the photocatalyst can be effectively exhibited, and a higher desired radiation characteristic can be exhibited. [C] component: a radiation sensitive acid generator or a radiation sensitive linear generator which is a radioactive acid generator or a radiation sensitive alkali generator [C] is defined as being irradiated with radiation, thereby serving as [A] A compound in which a component of a pyrithione polymer is condensed or a catalyst in a hardening reaction, and an acidic active material or a basic active material is released. In addition, as the radiation to be irradiated with an anion of the acidic active material or an anion of the basic active material in order to decompose the [C] component, visible light, ultraviolet light, infrared light, X-ray, krypton: ray, /3 ray, 7 Rays, etc. Among these rays, ultraviolet rays are preferably used because of a certain energy level, a fast hardening speed can be achieved, and the irradiation device is relatively inexpensive and small. Further, according to the radiation-sensitive linear composition, by using the above-mentioned substance as the metal oxide particles of the [B] component, it is not necessary to use a specific substance as the radiation-sensitive acid generator or the radiation-sensitive linear base of the [C] component. The agent 'is able to play a positive pattern. In particular, in the case of a positive-type polyoxyalkylene type radiation-sensitive linear composition, an acid generator tends to use a quinonediazide according to the radiation-sensitive composition, as described above by using a predetermined substance. The metal oxide particles of the component [B] can exhibit a positive pattern formation property without using a specific substance as a radiation sensitive acid generator or a radiation sensitive alkali generator of the [C] component. -18- 201131302 In the case of a sensory radioactive acid generator of the component [c], a diphenyliodonium salt, a triphenylsulfonium salt, a phosphonium salt, a benzothiazole key salt, an ammonium salt, a money salt, or a tetrahydrogen can be cited. A sulfonium salt such as a thiophene salt or a thiopurine compound. Further, quinonediazide is also a sensitizing radioactive acid generator which generates an acid by radiation. However, the acid produced is a carboxylic acid having a low acidity, and is insufficient in the case of a catalyst for condensation and hardening reaction. Therefore, the radiation-sensitive acid generator of the component [C] is preferably a substance other than quinonediazide. Examples of the diphenyliodonium salt include diphenyliodonium tetrafluoroborate, diphenyliodonium hexafluorophosphonate, diphenyliodonium hexafluoroarsenate, and diphenyliodotrifluoromethanesulfonate. Acid salt, diphenyliodotrifluoroacetate, diphenyliodo-p-toluenesulfonate, diphenyliodobutyl ginseng (2,6-difluorophenyl)borate, 4-methoxyphenylbenzene Tetrafluoroborate, bis(4-tert-butylphenyl) tetrafluoroborate, bis(4-terphenylphenyl)iodohexafluoroarsenate, bis(4-tertiary butyl) Phenyl)iodotrifluoromethanesulfonate, bis(4-tributylphenyl)iodotrifluoroacetate, bis(4-tributylphenyl)iodo-p-toluenesulfonate, bis(4- Tertiary butyl phenyl) iodonium sulfonic acid and the like. Examples of the triphenylsulfonium salt include triphenylsulfonium trifluoromethanesulfonate, triphenyl camphorsulfonic acid, triphenylsulfonium tetrafluoroborate, and triphenylsulfonium trifluoroacetate. Triphenylphosphonium p-toluenesulfonate, triphenylphosphonium butyl (2,6-difluorophenyl) borate, and the like. Examples of the onium salt include an alkyl phosphonium salt, a benzyl phosphonium salt, a dibenzyl phosphonium salt, a substituted benzyl phosphonium salt, and the like. In the case of these mirror salts, -19 - 201131302, as the alkyl phosphonium salt, for example, 4-ethoxyphenoxy phenyl dimethyl hexafluoroantimonate, 4-ethyl methoxy phenyl dimethyl hydride Base hexafluoroarsenate, dimethyl-4-(benzyloxycarbonyloxy)phenylphosphonium hexafluoroantimonate, dimethyl-4-isobenzoyloxy)phenylphosphonium Fluoride, dimethyl 4-(benzhydryloxy)phenylphosphonium hexafluoroarsenate, dimethyl-3-chloro-tetramethyloxyphenyl hexafluoroantimonate And the benzyl sulfonium salt, for example, benzyl-4-hydroxyphenylmethyl sulfonium hexafluoroantimonate, benzyl-4-hydroxyphenylmethyl sulfonium hexafluorophosphonate, 4-B醯Phenylphenylbenzylmethyl hexafluoroantimonate, benzyl-4-methoxyphenylmethyl hexafluoroantimonate, benzyl- 2-methyl-4-hydroxyphenylmethyl hydrazine Hexafluoroantimonate, benzyl-3-chloro-4-hydroxyphenylmethylphosphonium hexafluoroarsenate, 4-methoxybenzyl-4-hydroxyphenylmethylphosphonium hexafluorophosphonate, etc.; Examples of the dibenzyl sulfonium salt include dibenzyl-4-hydroxyphenyl hexafluoroantimonate and dibenzyl. 4 monohydroxyphenyl sulfonium hexafluorophosphonate, 4-ethoxycarbonyl phenyl dibenzyl hexafluoroantimonate, dibenzyl-4-methoxyphenyl hexafluoroantimonate, dibenzyl 3-3-chloro-4-hydroxyphenyl hydrazine hexafluoroarsenate, dibenzyl _3_methyl-4 hydroxy- 5-tert-butylphenyl hexafluoroantimonate, benzyl-4- Methoxybenzyl-4-hydroxyphenylphosphonium hexafluorophosphonate; and the substituted benzyl sulfonium salt, for example, p-chlorobenzyl-4-hydroxyphenylmethyl hexafluoroantimonate, p-Nitrobenzyl-4-hydroxyphenylmethylphosphonium hexafluoroantimonate, p-chlorobenzyl-4-hydroxyphenylmethylphosphonium hexafluorophosphonate, p-chlorobenzyl-3-methyl- 4 -hydroxyphenylmethyl hexafluoroantimonic acid-20- 201131302 salt, 3,5-dichlorobenzyl-4-hydroxyphenylmethyl hexafluoroantimonate, o-chlorobenzyl-3-chloro- 4 Once the phenylmethyl mirror hexafluorochain acid salt and the like. Examples of the benzothiazole moieties include 3-benzylbenzothiazole hexafluoroantimonate, 3-benzylbenzothiazole hexafluorophosphonate, and 3-benzylbenzothiazole. Fluoroborate, 3-(p-methoxybenzyl)benzothiazole hexafluoroantimonate, 3-benzyl-2-methylthiobenzothiazole gun hexafluoroantimonate, 3-benzyl- 5-Chlorothiobenzothiazolium hexafluoroantimonate. Examples of the tetrahydrothiophene key salt include fluorene-(4-n-butoxynaphthalen-1-yl)tetrahydrothiophene trifluoromethanesulfonate and 1-(4-n-butoxynaphthalene). 1 yl) tetrahydrothiophene hexafluoro-n-butyl sulfonate, 1 -(4 _-n-butoxynaphthalenyl-1 yl) tetrahydrothiophene- 1,1,2,2-tetrafluoro-2-(莰 莰 2-base) ethanesulfonate, 1-(4_n-butoxynaphthalene-1-yl)tetrahydrothiophene-2—(5-tris-butoxycarbonyloxybicyclo[2. 2. 1]heptane-2-yl)-M,2,2-tetrafluoroethanesulfonate, 1-(4-n-butoxynaphthalene-1-yl)tetrahydrothiophene _ 2 — (6 - tertiary Butoxy-oxyloxybicyclo[2. 2. 1]Gengyuan-2-1-yl)_ 1,1,2,2-tetrafluoroethanesulfonate, 1-(4,7-dibutoxy-1-naphthenyl)tetrahydrothiophene trifluoromethanesulfonate Examples of the sulfonimide compound such as an acid salt or the like include, for example, N-(trifluoromethylsulfonyloxy)butaneimine (trade name "SI-105" (manufactured by Midon Chemical Co., Ltd.). ), N -( camphorsulfonyloxy)butanediimide (trade name "SI-106" (manufactured by Midori Chemical Co., Ltd.)), N _(4-methylphenylsulfonyloxy) butyl Yttrium (trade name "SI-101" (manufactured by Midori Chemical Co., Ltd.)), N_(2_trifluoromethylphenyl-21 - 201131302, decyloxy) butadiene imine, N - (4 -Fluorophenylsulfonyloxy)butanediamine, N_(difluoromethylanthraceneoxy)phthaleneimide, n_(camphorsulfonyloxy) phthalimide, N- (2~Trifluoromethylphenylsulfonyloxy)-o-phenylenedi-imine, N-(2-fluorophenyl-propenyloxy)-o-phenylenediamine, n-(trifluoromethyl) Oxy)diphenylmaleimide (trade name "PI — 1〇5" (Mi Made by Dori Chemical Co., Ltd.)), N-(camphorsulfonyloxy)diphenylmaleimide, 4-methylphenylsulfonyloxydiphenylmaleimide, N — (2 _Trifluoromethylphenylsulfonyloxy)diphenylmaleimide, n_(4-fluorophenylsulfonyloxy)diphenylmaleimide, N-(phenylsulfonate) Base) double ring [2. 2. 1] Gly-5-ene-2,3-dicarboxylic acid quinone imine (trade name "NDI-100" (manufactured by Midori Chemical Co., Ltd.)), N - (4-methylphenylsulfonyloxy) Double loop [2. 2. 1] Gino-5-ene-2,3-dicarboxylic acid quinone imine (trade name "NDI-101" (manufactured by Midori Chemical Co., Ltd.)), N-(trifluoromethanesulfonyloxy)bicyclo[2 . 2. 1] Glyon-5-ene-2,3-dicarboxylic acid quinone imine (trade name "NDI-105" (manufactured by Midori Chemical Co., Ltd.)), N-(nonafluorobutanesulfonyloxy)bicyclo[ 2. 2. 1] Gino-5-ene-2,3-dicarboxylic acid quinone imine (trade name "NDI-109" (manufactured by Midori Chemical Co., Ltd.)), N-(camphorsulfonyloxy)bicyclo[2. 2. 1] Glycine-5-ene-2,3-dicarboxylic acid quinone imine (trade name "NDI-106" (manufactured by Midori Chemical Co., Ltd.)), N-(camphorsulfonyloxy)-7-oxa Double loop [2. 2. 1] Gino-5-ene-2,3-dicarboxylic acid quinone imine, ^-(trifluoromethylsulfonyloxy)-7-oxabicyclo[2. 2. 1] Gh-5-ene-2,3-dicarboxylate imine, N-(4-methylphenylsulfonyloxy)bicyclo[2. 2. 1] Geng-5-ene--22-201131302 2,3_ quinone diamine, N-(4-methylphenylsulfonyloxy)-7-oxabicyclo[2. 2. 1] Geng-5-ene-2,3-dicarboxylic acid quinone imine, N-(2-trifluoromethylphenyl fluorenyloxy)bicyclo[2. 2. 1] hept-5-ene-2,3-didentate quinone imine, N-(2-trifluoromethylphenylsulfonyloxy)-7-oxabicyclo [2. 2. 1] Glycerol-5-ene-2,3-dicarboxylic acid quinone imine, N-(4-fluorophenylsulfonyloxy)bicyclo[2. 2. 1] Gg-5-ene-2,3-dicarboxylic acid quinone imine, N-(4-fluorophenylsulfonyloxy)-7-oxabicyclo[2. 2. 1] hept-5-ene~ 2,3-dicarboxylic acid quinone imine 'N-(trifluoromethylsulfonyloxy)bicyclo[2. 2•丨]heptane —5,6-oxy-2,3-di-bisphosphonium imine, N—(camphorsulfonyloxy)bicyclo[2. 2. 1] heptane-5,6-oxy-2,3-dicarboxylic acid quinone imine, N-(4~methylphenylsulfonyloxy)bicyclo[2. 2. 1] heptane _ 5,6-oxy-2,3-dicarboxylic acid quinone imine, N-(2-trifluoromethylphenylsulfonyloxy)bicyclo[2. 2,1;] heptane-5,6-oxy-2'3-dicarboxylic acid quinone imine, N-(4-fluorophenyl schistosyloxy)bicyclo[2. 2. 1] Gengyuan - 5,6-oxy-2,3-dinonionimide, N-(trifluoromethylsulfonyloxy)naphthyldicarboxylic acid quinone imine (trade name "NAI- 105" (manufactured by Midori Chemical Co., Ltd.), N - (camphorsulfonyloxy) naphthyldicarboxylic acid quinone imine (trade name "ΝΑΙ-106" (Mid〇ri Chemical Co., Ltd.)), N - (4-methylphenylsulfonyloxy) decyl dicarboxylic acid quinone imine (trade name "ΝΑΙ 10 Γ (Midori Chemicals Co., Ltd.)) N-(phenylsulfonyloxy) ) naphthyldicarboxylic acid quinone imine (trade name "NAI-100" (manufactured by Midori Chemical Co., Ltd.)), n~(2_trifluoromethylphenylsulfonyloxy)naphthyldicarboxylic acid quinone imine , N—(4~Gasylsulfonyloxy)naphthyldicarboxylic acid quinone imine, N-(pentafluoroethylsulfonyloxy) -23- 201131302 Naphthyldicarboxylic acid quinone imine, N — (heptafluoropropylsulfonyloxy)naphthalene, N-(nonafluorobenzenesulfonyloxy)naphthyldicarboxylate S " ΝΑΙ - 109" (Midori Chemical Co., Ltd.): sulfonium oxide Yttrium naphthyldicarboxylate N-(butylsulfonium I carboxylic acid quinone imine (trade name "NAI-1 004 (manufactured by Midori Chemicals)), N-(pentylsulfonyloxy)naphthyldicarboxylic acid sulfonium sulfonate Nylidene naphthyldicarboxylate, N-(heptylsulfonate I bismuthimide, N-(octylsulfonyloxy)naphthyldicarboxyl-(indolylsulfonyloxy)naphthalene Among these sensitizing radioactive acid generators, triphenylsulfonium salts, sulfonium salts, and benzoquinones are preferably used from the viewpoint of improving the sensitivities of the sensitizing materials and the adhesion of the obtained cured products. a thiazole gun salt, a tetralinium imine compound, particularly preferably a triphenylsulfonium salt, a triphenyl camphorsulfonic acid, a 4-ethoxylated phenyl dicarboxylate, a benzyl group _4_ Hydroxyphenylmethyl sulfonium hexafluoroantimonate phenyl benzyl hydrazine hexafluoroantimonate, bis- benzyl 4- fluoro phthalate, 4 ethoxy phenyl benzyl hydrazide Hexafluoro | benzyl benzothiazole hexafluoroantimonate, benzyl-4-pyridyl fluorophosphonate, 1-(4-n-butoxynaphthalene-1-yl) tetrasulphate, 1 — (4,7-dibutoxy-oxime-naphthyl)tetrahydromethanesulfonic acid , N_(trifluoromethylsulfonyloxy)naphthyldicarboxylic acid, in the case of a radioactive linear base generator, can be used to form a metal complex, o-nitrobenzyl carbamic acid, biscarboxylic acid醯5 amine (trade name |, N-(ethyl I)) naphthyl di-fedamine, N-(hexyloxy)naphthyl t-imine, N radioactive group point, compare, thiophene Key salt, trifluoromethanesulfonic acid-based hexafluoroarsenic > 4 _ ethoxylated phenyl sulfonate, 3-methylmethyl hexafluorocyclotrifluoro thiophene trifluoride. Examples include cobalt, etc., α,α-dimethyl-24-201131302 3,5-dimethoxybenzylaminocarboxylic acid, decyloxyimine, and the like. Examples of transition metal complexes include bromopentaamine cobalt perchlorate 'bromopentaamine cobalt perchlorate, bromopentaamine cobalt perchlorate, hexaammine perchlorate 'hexa Amine cobalt perchlorate, hexapropylamine cobalt perchlorate, and the like. Examples of the m-nitrobenzylaminoformate include [[(2-nitrobenzyl)oxy]carbonyl]methylamine, [[(2-nitrobenzyl)oxy]carbonyl) ] propylamine, [[(2-nitrobenzyl)oxy]carbonyl]hexylamine, [[(2-nitrobenzyl)oxy]carbonyl]cyclohexylamine, [[(2-nitrobenzyl) Alkyl]carbonyl]aniline, [[(2-nitrobenzyl)oxy]carbonyl]piperidine, bis[[(2-nitrobenzyl)oxy]methylene]hexamethylenediamine, double [[(2-Nitrobenzyl)oxy]carbonyl]phenylenediamine, bis[[(2~nitrobenzyl)oxy]carbonyl]toluenediamine, bis[[(2-nitro]] Oxy]carbonyl]diaminodiphenylmethane, bis[[(2-nitrobenzyl)oxy]carbonyl]piperazine, [[(2,6-dinitrobenzyl)oxy]carbonyl] Methylamine, [[(2,6-dinitrobenzyl)oxy]carbonyl]propylamine, [[(2,6-dinitrobenzyl)oxy]]yl]hexylamine, [[(2, 6-Dinitrobenzyl)oxy]carbonyl]cyclohexylamine '[[(2,6-dinitrobenzyl)oxy]carbonyl]aniline, [[(2,6-dinitrobenzyl)) Oxy] nucleophilic] piperidine, bis[[(2,6-dinitrobenzyl)oxy]carbonyl]hexamethylenediamine, bis[[(2,6-di) Benzyl)oxy]carbonyl]phenylenediamine, bis[[(2,6-mononitro)oxy]peptidyl]toluenediamine, bis[[(2,6-dinitro) Oxy]carbonyl]diaminodiphenylmethane, bis[[(2,6-dinitrobenzyl)oxycarbonyl]piperidin or the like. In the case of -dimethyl-3,5-dimethoxybenzylaminocarboxylic acid, '[[α,α-dimethyl-3,5-dimethoxy--25-- 201131302 yloxy]carbonyl]methylamine, [[(α,α-dimethyl-3,5-dimethoxybenzyl)oxy]carbonyl]propylamine, [[(α,α:—dimethyl —-3,5-dimethoxybenzyl)oxy]carbonyl]hexylamine, [[(〇:,〇:-dimethyl-3,5-dimethoxybenzyl)oxy]carbonyl] Cyclohexylamine, [[(α,α-dimethyl-3,5-dimethoxybenzyl)oxy]carbonyl]aniline, [[(α,α-dimethyl-3,5-dimethyl Oxybenzyl)oxy]carbonyl]piperidine, bis[[(α,α-dimethyl-3,5-dimethoxybenzyl)oxy]]pyridyl]hexamethylenediamine, double [[(α,α-dimethyl-3,5-dimethoxybenzyl)oxy]carbonyl]phenylenediamine, bis[[(α,α-dimethyl-3,5-dimethoxy) Benzyl)oxy]carbonyl]toluenediamine, bis[[(α,α-dimethyl-3,5-dimethoxybenzyl)oxy]carbonyl]diaminodiphenylmethane' double [[(α,α _dimethyl-3,5-dimethoxybenzyl)oxy]carbonyl]] pipe trap and the like. Examples of the oxime imines include propyl acetophenone oxime, propyl ketone benzophenone oxime, propyl acetonide oxime, butyl acetophenone oxime, butyl benzophenone oxime, and butyl fluorenyl acetonide. Hexamethylene acetophenone oxime, hexamethylene benzophenone oxime, hexamethylene acetoacetone oxime, acrylonitrile acetophenone oxime, acryl fluorenyl benzene ketone, propylene decyl acetonide oxime, and the like. Other examples of the radiation sensitive alkali generating agent include 2-nitrobenzylcyclohexylaminocarboxylic acid, 0-aminomethylmercaptohydroxyguanamine, and the like. The radiation-sensitive acid generator or the radiation-sensitive linear base generator of the component [C] may be used singly or in combination of two or more. The amount of the component [C] used is preferably 0% with respect to 100 parts by mass of the [Α] component. 1 part by mass to 20 parts by mass, more preferably 1 part by mass to -26-201131302 10 parts by mass. By making the amount of [c] component 0. 1 part by mass to 20 parts by mass, and a good balance between the radiation sensitivity and the formed cured product adhesion property can be obtained, and an excellent radiation-sensitive composition can be obtained 'in addition, the generation of precipitates can be prevented in the step of forming the coating film' The coating film can be easily formed. [D] component: dispersant In the radiation sensitive composition of the present invention, in addition to the components [A] to [C], a dispersant of the component [D] is preferably contained. By further containing the [D] dispersant, the radiation-sensitive linear composition can uniformly disperse the [B] metal oxide particles, improve the coating property, and improve the adhesion of the obtained cured product, and the refractive index can be uniformly increased without variation. Examples of the dispersant of the component [D] include a nonionic dispersant, a cationic dispersant, and an anionic dispersant. From the viewpoint of improving the linear characteristics of the positive feeling radiation and the pattern formability, a nonionic dispersant is preferred. The reason why the radiation-sensitive composition is a dispersant of the [D] component by using a nonionic dispersant, thereby improving the positive-type radiation linear characteristics and pattern formability, has not been determined, but it is considered as follows. The nonionic dispersant has a polarized covalent bond moiety. It is considered that the metal oxide particles of the [B] component are easily broken by the photocatalytic action of the radiation and the metal oxide due to the polarization of the non-ionic dispersant, and therefore, when irradiated with radiation, it is positive. The exposed portion of the composition was partially melted, showing high pattern formability. In the nonionic dispersant, polyoxyethylene alkyl phosphate, guanamine amine salt of high molecular weight polycarboxylic acid, ethylenediamine PO-EO condensation -27-201131302, polyoxyethylene alkyl group is preferred. Ether, polyoxyethylene alkylphenyl ether, alkyl glucoside, polyoxyethylene fatty acid ester, sucrose fatty acid ester, sorbitan fatty acid ester, polyoxyethylene sorbitan fatty acid ester or fatty acid alkanol Guanamine. As the polyoxyethylene-based phosphoric acid vinegar, a substance represented by the above formula (2) is preferable. As a commercial product of the dispersing agent represented by the above formula (2), PLAADED 151 manufactured by Kuipan Chemical Co., Ltd., and the like can be mentioned. The uniform dispersibility of the metal oxide particles can be further improved by the polyoxyethylene alkyl phosphate. The guanamine amine salt of the high molecular weight polycarboxylic acid is preferably a compound represented by the above formula (3). For the commercial product of the dispersant represented by the above formula (3), PL A ad ED21 1 manufactured by Kuipan Chemicals Co., Ltd., or the like can be cited. The uniform dispersibility of the metal oxide particles can be further improved by the amide amine salt of the high molecular weight polycarboxylic acid. In the case of the ethylenediamine P〇-EO condensate, the substance represented by the above formula (4) is preferred. As a commercial product of the dispersing agent represented by the above formula (4), ADEKA PLURONIC TR-701, TR-702, TR-704, etc. manufactured by Asahi Kasei Kogyo Co., Ltd. may be mentioned. With the ethylenediamine PO-EO condensate, the silo g further increases the uniform dispersibility of the metal oxide particles. The polyoxyethylene alkyl ether is preferably a compound represented by the following formula (5). R4 - CH(CH2CH20)v - Η (5) In the formula (5), 'R4 is an alkyl group having 1 to 20 carbon atoms. ν is an integer from 1〇 to 300. In the case of R4, an alkyl group having 1 to 12 carbon atoms is particularly preferred. The commercial product of the dispersant represented by the above formula (5) is exemplified by the ADEKATOL TN/SO/UA series manufactured by ADEKA Co., Ltd. -28- 201131302 In terms of polyoxyethylene alkylphenyl ether, a substance represented by the following formula (6) is preferred.

0s(CH2CH20)w—Η 12的烷基。W是10〜300的 在式(6)中,R5是碳數1 整數。以上式(6)表示的分散劑的市售品而言,可以列舉 ADEKA股份有限公司製造的adekATOL SP/PC系列等。 以垸基葡糖苷而言,較佳爲下式(7)表示的物質。0s (CH2CH20) w - an alkyl group of 12 . W is 10 to 300. In the formula (6), R5 is a carbon number of 1 integer. The commercial product of the dispersing agent represented by the above formula (6) may, for example, be an atekATOL SP/PC series manufactured by ADEKA Co., Ltd., or the like. The decyl glucoside is preferably a substance represented by the following formula (7).

在式(7)中’ R、R7、r*、R9和R|°各自獨立地表示氫 或碳數1〜1 2的烷基。 以聚氧乙烯脂肪酸酯而言,較佳爲下式(8)表示的物 質。 R11—COO—(CH2CH20)y—R12 (8) 在式(8)中,R11是碳數1〜20的烷基。R12是氫或碳數 2〜13的醯基。y是10〜300的整數。以Rn而言,特佳爲 碳數1〜12的烷基。以上式(8)表示的分散劑的市售品而 言,可以列舉ADEKA股份有限公司製造的ADEKAESTOL OEG系歹丨J 、ADEKAESTOL TL系歹IJ等等° 以蔗糖酸酯而言,較佳爲下式(9)表示的物質。 -29- 201131302In the formula (7), R, R7, r*, R9 and R|° each independently represent hydrogen or an alkyl group having 1 to 12 carbon atoms. The polyoxyethylene fatty acid ester is preferably a substance represented by the following formula (8). R11—COO—(CH 2 CH 20 ) y — R 12 (8) In the formula (8), R 11 is an alkyl group having 1 to 20 carbon atoms. R12 is hydrogen or a fluorenyl group having 2 to 13 carbon atoms. y is an integer from 10 to 300. In the case of Rn, an alkyl group having 1 to 12 carbon atoms is particularly preferred. The commercially available product of the dispersant represented by the above formula (8) may be, for example, ADEKAESTOL OEG system 歹丨J, ADEKAESTOL TL system 歹IJ manufactured by ADEKA Co., Ltd., etc., in the case of sucrose ester, preferably lower The substance represented by the formula (9). -29- 201131302

各自獨立地爲氫或碳數2〜13的醯基。 以脫水山梨糖醇脂肪酸酯而言,較佳爲下式(10)表示 的物質。 八 21 CH〇 CH——CH2——OCOR21Each is independently hydrogen or a fluorenyl group having 2 to 13 carbon atoms. The sorbitan fatty acid ester is preferably a compound represented by the following formula (10). Eight 21 CH〇 CH——CH2——OCOR21

I I H0~C^ /CH2 (10)I I H0~C^ /CH2 (10)

CHCH

II

OH 在式(10)中,R21是以- (CH2CH2〇)z— H表示的基團。z 是10〜300的整數。以上式(10)表示的分散劑的市售品而 言,可以列舉ADEKA股份有限公司製造的ADEKAESTOLS 系列等。 以聚氧乙烯脫水山梨糖醇脂肪酸酯而言,較佳爲下式 (1 1)表示的物質。 CH2 CH—CH2—OCOR22OH In the formula (10), R21 is a group represented by -(CH2CH2〇)z-H. z is an integer from 10 to 300. The commercially available product of the dispersant represented by the above formula (10) is ADEKAESTOLS series manufactured by ADEKA Co., Ltd., and the like. The polyoxyethylene sorbitan fatty acid ester is preferably a compound represented by the following formula (1 1). CH2 CH—CH2—OCOR22

R230——CH €H〇 \ / 2 CH OR24 30- (11) 201131302 在式(11)中,R22、R23、R24各自獨立地表示氫或— (CH2CH2〇)k— Η表示的基團。k是10〜300的整數。 以脂肪酸鏈烷醇酯而言,較佳爲下式(12)表示的物質。 R25—CON(CH2CH2OH)2 (12) 在式(12)中,R25是碳數1〜20的烷基。以R25而言, 特佳馬碳數1〜12的烷基。以上式(12)表示的分散劑的市 售品而言,可以列舉 ADEKA股份有限公司製造的 ADEKASOL 系歹IJ 等。 以[D]成分分散劑的混合量而言,沒有特別的限定,但 相對於100質量份[B]成分的金屬氧化物顆粒,較佳爲0.1 質量份〜100質量份,更佳爲10質量份〜60質量份。如果 [D] 成分分散劑的混合量少於0. 1質量份,則恐怕金屬顆粒 的分散性降低,導致組成物的塗布性降低,同時圖案形成 性降低。相反地,如果該混合量超過1 〇〇質量份,則正型 的感放射線特性恐怕會降低。此外,恐怕分散劑的混合過 多導致所得硬化物的黏附性會降低。 其他任意成分 本發明的感放射線性組成物除了上述[A ]〜[D ]成分以 外,在不損害本發明效果的範圍內’根據需要,可以進一 步含有[E]分散介質、[F]界面活性劑作爲其他的任意成分。 [E] 成分:分散介質 · [E]成分的分散介質只要能均勻分散[B]成分的金屬氧 化物顆粒,就沒有特別的限定。[E]成分的分散介質能使[C] -31 - 201131302 成分的非離子類分散劑有效地作用,均勻分散[B]成分的金 屬氧化物顆粒,根據分散介質的分類’還可以用作其他[A] 成分等的溶劑。 以分散介質而言’可以使用甲醇、乙醇、異丙醇、丁 醇、辛醇等醇類;乙酸乙酯、乙酸丁酯、乳酸乙酯' 丁內酯、丙二醇單甲醚乙酸酯、丙二醇單乙醚乙酸酯等酯 類;乙二醇單甲醚、丙二醇單甲醚、二乙二醇單丁醚等醚 類;二甲基甲醯胺、N,N -二甲基乙醯乙醯胺、N —甲基吡 咯啶酮等醯胺類;丙酮、甲乙酮、甲基異丁基酮、環己酮 等酮類;苯、甲苯、二甲苯、乙苯等芳香族烴類。其中, 較佳爲丙酮、甲乙酮、甲基異丁基酮、苯、甲苯、二甲苯、 甲醇、異丙醇、丙二醇單甲醚,更較佳甲乙酮、丙二醇單 甲醚。分散介質可以使用一種,或將兩種以上混合使用。 以[E]成分的分散介質的混合量而言,可以根據用途適 當設定,但相對於100質量份[B]成分的金屬氧化物顆粒’ 較佳爲100質量份〜100000質量份,特佳爲200質量份〜 10000質量份。 [F]成分:界面活性劑 [F]成分的界面活性劑可以爲了改善感放射線性組成 物的塗布性、降低塗布不均、改進放射線照射部分的顯影 性而添加。另外,在該[F]成分的界面活性劑中,不含[C] 成分的非離子類分散劑。以較佳之界面活性劑的例子而 言,可以列舉氟類界面活性劑和聚矽氧類界面活性劑。 -32- 201131302 以氟類界面活性劑而言,可以列舉例如1,1,2,2-四氟 辛基(1,1,2,2-四氟丙基)醚、1,1,2,2-四氟辛基己基醚、八 乙二醇雙(1,1,2,2—四氟丁基)醚、六乙二醇(1,1,2,2,3,3_六 氟庚基)醚、八丙二醇雙(1,1,2,2 —四氟丁基)醚、六丙二醇 雙(1,1,2,2,3,3—六氟庚基)醚等氟醚類;全氟十二烷基磺酸 鈉:1,1,2,2,8,8,9,9,10,10—十氟癸烷、1,1,2,2,3,3_ 六氟癸 烷等氟烷類;氟烷基苯磺酸鈉類;氟烷基氧乙烯醚類;碘 化氟烷基銨類;氟烷基聚氧乙烯醚類;全氟烷基聚氧乙醇 類;全氟烷基烷氧酯類;氟系烷基酯類等。 以這些氟類界面活性劑的市售品而言,可以列舉 EFTOP EF301、303、352(新秋田化成股份有限公司製造)、 Megafac F171、172、173(大日本油墨股份有限公司製造)、 FLUORAD FC430、43 1 (住友3Μ股份有限公司製造)、Asahi GuardAG710、SurflonS — 382、SC - 101、102、103、104、 105、106(旭硝子股份有限公司製造)、FTX— 218(NEOS股 份有限公司製造)等。 以矽類界面活性劑的例子而言,以市售的商品名爲例, 可以歹y 舉 SH200 - 100cs,SH28PA、SH30PA、ST89PA、SH190、 SH8 400 FLUID(Toray dowcorning silicone 股份有限公司製 造)、Organosiloxane Polymer KP341(信越化學工業股份有 限公司製造)等。 使用[F]界面活性劑時的量相對於100質量份[Α]成 分,較佳爲0.01質量份〜10質量份,更佳爲0.05質量份 -33- 201131302 〜5質量份。藉由使[F]界面活性劑的使用量爲0.01質量份 〜10質量份,從而能使感放射線性組成物的塗布性最佳化。 感放射線性組成物 本發明的感放射線性組成物係藉由以既定的比例將上 述之[A]成分的矽氧烷聚合物、[B]成分的金屬氧化物顆 粒、[C]成分的感放射線性酸產生劑或感放射線性鹼產生 劑 '以及根據需要的[D ]成分的分散劑、其他的任意成分混 合而製備。通常,該感放射線性組成物可藉由將[B]成分的 金屬氧化物顆粒和[D]成分的分散劑、[E]成分的分散介質 以既定比例混合,形成分散液’再將該分散液與[A]成分的 矽氧烷聚合物、[C]成分的感放射線性酸產生劑或感放射線 性鹼產生劑,以及根據需要的任意成分混合,從而製備分 散液狀態的感放射線性組成物。 另外,在製備上述分散液時的分散可以使用油漆振盪 器、SC磨機、環形磨機、針形磨機等,通常以圓周速度5 〜1 5 m/s,持續進行到直至觀察不到粒徑的降低。以該持續 時間而言,通常爲數小時。此外,在該分散時,較佳爲使 用玻璃珠等分散珠。對該珠徑沒有特別的限定,但較佳爲 0.05 〜0.5mm,更佳爲 〇.〇8 〜0.5mm,特佳爲 0.08 〜0.2mm。 硬化膜(液晶顯示元件用之保護膜、層間絕緣膜或隔 片、半導體用之保護膜或層間絕緣膜、或LED用透鏡材料 等)的形成 接著,對使用上述感放射線性組成物在基板上形成圖 -34- 201131302 案化的透明硬化膜(液晶顯示元件用之保護膜、層間絕緣膜 或隔片、半導體用之保護膜或層間絕緣膜、或LED用透鏡 材料等)的方法進行說明。該方法包括以下的步驟。 (1) 在基板上形成本發明感放射線性組成物之塗膜的 步驟、 (2) 在步驟(1)中形成的塗膜的至少一部分中照射放射 線的步驟、 (3) 使在步驟(2)中照射了放射線的塗膜顯影的步驟、和 (4) 對在步驟(3)中顯影的塗膜進行加熱的步驟 (1)在基板上形成感放射線性組成物之塗膜的步驟 在上述步驟(1)中’在基板上塗布本發明的感放射線性 組成物後,較佳係藉由對塗布面進行加熱(預烘焙),從而 除去溶劑’形成塗膜。以能使用的基板的例子而言,可以 列舉玻璃、石英、矽、樹脂等。以樹脂的具體例而言,可 以列舉聚對苯二甲酸乙二酯、聚對苯二甲酸丁二酯、聚醚 颯、聚碳酸酯、聚醯亞胺、環狀烯烴的開環聚合物及其加 氫物等。 以組成物分散液的塗布方法而言,沒有特別的限定, 可以採用例如噴塗法、輥塗法、旋轉塗布法(旋塗法)、狹 縫模具塗布法、棒塗法等適當的方法。在這些塗布方法中, 特佳爲旋塗法或狹縫模具塗布法。預烘焙的條件根據各成 分的種類、混合比例等也有所不同,但較佳可以在7 〇〜1 2 〇 °C下進行1〜10分鐘左右。 -35- 201131302 (2) 在塗膜的至少一部分中照射放射線的步驟 在上述步驟(2)中’使形成的塗膜的至少一部分曝 在該情況下’在部分塗膜曝光時,通常經由具有既定 的光罩進行曝光。以在曝光中使用的放射線而言,可 用例如可見光線、紫外線、遠紫外線、電子束、X射線 在這些放射線中,較佳爲波長位於19〇〜450nm範圍內 射線’特佳爲含3 6 5 n m紫外線的放射線。 該步驟中的曝光量以使用照度計(〇Ai model356、R230——CH €H〇 \ / 2 CH OR24 30- (11) 201131302 In the formula (11), R22, R23 and R24 each independently represent a hydrogen or a group represented by —(CH2CH2〇)k—Η. k is an integer of 10 to 300. The fatty acid alkanol ester is preferably a compound represented by the following formula (12). R25—CON(CH2CH2OH) 2 (12) In the formula (12), R25 is an alkyl group having 1 to 20 carbon atoms. In the case of R25, the tetramethyl group has an alkyl group having 1 to 12 carbon atoms. The commercial product of the dispersant represented by the above formula (12) is ADEKASOL system IJ manufactured by ADEKA Co., Ltd., and the like. The amount of the component (D) component dispersant is not particularly limited, but is preferably 0.1 part by mass to 100 parts by mass, more preferably 10% by mass based on 100 parts by mass of the metal oxide particles of the [B] component. Parts ~ 60 parts by mass. If the amount of the dispersant of the component [D] is less than 0.1 part by mass, the dispersibility of the metal particles may be lowered, resulting in a decrease in coatability of the composition and a decrease in pattern formability. On the contrary, if the mixing amount exceeds 1 〇〇 by mass, the radiation characteristics of the positive type may be lowered. Further, it is feared that excessive mixing of the dispersant leads to a decrease in the adhesion of the resulting cured product. Other optional components The radiation sensitive composition of the present invention may further contain [E] dispersion medium, [F] interface activity, in addition to the above [A] to [D] components, within a range not impairing the effects of the present invention. The agent acts as an optional ingredient. [E] Component: Dispersing medium The dispersion medium of the [E] component is not particularly limited as long as it can uniformly disperse the metal oxide particles of the component [B]. The dispersion medium of the component [E] enables the nonionic dispersant of the component [C] -31 - 201131302 to effectively act, uniformly disperses the metal oxide particles of the component [B], and can be used as other according to the classification of the dispersion medium. [A] Solvents such as ingredients. In terms of dispersion medium, alcohols such as methanol, ethanol, isopropanol, butanol, and octanol can be used; ethyl acetate, butyl acetate, ethyl lactate, butyrolactone, propylene glycol monomethyl ether acetate, and propylene glycol. Esters such as monoethyl ether acetate; ethers such as ethylene glycol monomethyl ether, propylene glycol monomethyl ether, diethylene glycol monobutyl ether; dimethylformamide, N,N-dimethylacetamidine Amidoxines such as amines and N-methylpyrrolidone; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone; and aromatic hydrocarbons such as benzene, toluene, xylene, and ethylbenzene. Among them, acetone, methyl ethyl ketone, methyl isobutyl ketone, benzene, toluene, xylene, methanol, isopropanol, propylene glycol monomethyl ether, and more preferably methyl ethyl ketone or propylene glycol monomethyl ether are preferable. The dispersion medium may be used alone or in combination of two or more. The amount of the dispersion medium of the component [E] can be appropriately set according to the use, but it is preferably 100 parts by mass to 100,000 parts by mass based on 100 parts by mass of the metal oxide particles of the component [B]. 200 parts by mass to 10,000 parts by mass. [F] component: surfactant The surfactant of the [F] component can be added for the purpose of improving the coating property of the radiation sensitive composition, reducing coating unevenness, and improving the developability of the radiation-irradiated portion. Further, in the surfactant of the component [F], a nonionic dispersant containing the [C] component is not contained. Examples of preferred surfactants include fluorine-based surfactants and polyoxon-based surfactants. -32- 201131302 In terms of a fluorine-based surfactant, for example, 1,1,2,2-tetrafluorooctyl (1,1,2,2-tetrafluoropropyl)ether, 1,1,2, 2-tetrafluorooctylhexyl ether, octaethylene glycol bis(1,1,2,2-tetrafluorobutyl)ether, hexaethylene glycol (1,1,2,2,3,3_hexafluoroheptane a fluoroether such as an ether, octapropylene glycol bis(1,1,2,2-tetrafluorobutyl)ether or hexapropylene glycol bis(1,1,2,2,3,3-hexafluoroheptyl) ether; Sodium perfluorododecylsulfonate: 1,1,2,2,8,8,9,9,10,10-decafluorodecane, 1,1,2,2,3,3-hexafluorodecane Isofluoroalkanes; sodium fluoroalkylbenzenesulfonates; fluoroalkyl oxyethylene ethers; fluoroalkylammonium iodides; fluoroalkyl polyoxyethylene ethers; perfluoroalkyl polyoxyethylenes; perfluoro Alkyl alkoxylates; fluorine-based alkyl esters. For the commercial products of these fluorine-based surfactants, EFTOP EF301, 303, 352 (manufactured by New Akita Chemicals Co., Ltd.), Megafac F171, 172, 173 (manufactured by Dainippon Ink Co., Ltd.), and FLUORAD FC430 can be cited. , 43 1 (manufactured by Sumitomo 3Μ Co., Ltd.), Asahi Guard AG710, SurflonS-382, SC-101, 102, 103, 104, 105, 106 (manufactured by Asahi Glass Co., Ltd.), FTX-218 (manufactured by NEOS Co., Ltd.) Wait. As an example of a quinone type surfactant, a commercially available product name is exemplified by SH200-100cs, SH28PA, SH30PA, ST89PA, SH190, SH8 400 FLUID (made by Toray dowcorning silicone Co., Ltd.), Organosiloxane. Polymer KP341 (manufactured by Shin-Etsu Chemical Co., Ltd.) and the like. The amount of the [F] surfactant used is preferably from 0.01 part by mass to 10 parts by mass, more preferably from 0.05 part by mass to from -33 to 201131302 to 5 parts by mass, per 100 parts by mass of the [Α] component. By using the amount of the [F] surfactant in an amount of from 0.01 part by mass to 10 parts by mass, the coating property of the radiation sensitive composition can be optimized. Radiation-sensitive composition The radiation-sensitive composition of the present invention has a feeling of the above-described [A] component of a cerium oxide polymer, a [B] component metal oxide particle, and a [C] component in a predetermined ratio. It is prepared by mixing a radioactive acid generator or a radiation sensitive alkali generator 'and a dispersing agent of the [D] component and other optional components. In general, the radiation sensitive composition can be formed by mixing the metal oxide particles of the [B] component and the dispersing agent of the [D] component and the dispersion medium of the [E] component in a predetermined ratio to form a dispersion liquid. The liquid is mixed with a siloxane polymer of the [A] component, a radiation-sensitive acid generator of the [C] component, or a radiation-sensitive alkali generating agent, and an optional component as needed to prepare a radiation-induced linear composition of the dispersion state. Things. Further, the dispersion in the preparation of the above dispersion may be carried out using a paint shaker, an SC mill, a ring mill, a needle mill or the like, usually at a peripheral speed of 5 to 15 m/s, until the observation is not observed. The diameter is reduced. In this duration, it is usually a few hours. Further, at the time of the dispersion, it is preferred to use dispersed beads such as glass beads. The bead diameter is not particularly limited, but is preferably 0.05 to 0.5 mm, more preferably 〇.〇8 to 0.5 mm, and particularly preferably 0.08 to 0.2 mm. Formation of a cured film (protective film for liquid crystal display element, interlayer insulating film or spacer, protective film for semiconductor or interlayer insulating film, or lens material for LED), and then using the above-described radiation sensitive composition on the substrate A method of forming a transparent cured film (a protective film for a liquid crystal display element, an interlayer insulating film or a separator, a protective film for an semiconductor or an interlayer insulating film, or a lens material for LED) of the present invention will be described. The method includes the following steps. (1) a step of forming a coating film of the radiation sensitive composition of the present invention on a substrate, (2) a step of irradiating radiation in at least a part of the coating film formed in the step (1), and (3) making the step (2) a step of developing a coating film irradiated with radiation, and (4) a step of heating the coating film developed in the step (3) (1), forming a coating film of the radiation-sensitive composition on the substrate, In the step (1), after the radiation sensitive composition of the present invention is applied onto a substrate, it is preferred to form a coating film by heating (prebaking) the coated surface to remove the solvent. Examples of the substrate that can be used include glass, quartz, rhodium, resin, and the like. Specific examples of the resin include open-loop polymers of polyethylene terephthalate, polybutylene terephthalate, polyether oxime, polycarbonate, polyimide, and cyclic olefin. Its hydrogenated product and the like. The coating method of the composition dispersion liquid is not particularly limited, and an appropriate method such as a spray coating method, a roll coating method, a spin coating method (spin coating method), a slit die coating method, or a bar coating method can be employed. Among these coating methods, a spin coating method or a slit die coating method is particularly preferred. The prebaking conditions vary depending on the type of the components, the mixing ratio, etc., but it is preferably about 1 to 10 minutes at 7 Torr to 1 2 〇 °C. -35- 201131302 (2) a step of irradiating radiation in at least a part of the coating film, in the above step (2), 'exposing at least a part of the formed coating film in this case', when the partial coating film is exposed, usually by having The exposed mask is exposed. For the radiation used in the exposure, for example, visible light, ultraviolet light, far ultraviolet light, electron beam, or X-ray may be used in these radiations, preferably in the range of 19 〇 to 450 nm, and the radiation is particularly preferably 3 6 5 .纳米 ultraviolet radiation. The amount of exposure in this step is to use an illuminometer (〇Ai model356,

Optical Associates Inc.製造)測定放射線在波長365nm 強度的値計’。較佳爲1 00〜1 0000 〗/m2,更佳爲500〜 J/m2。 (3) 顯影步驟 在上述步驟(3)中’藉由使曝光後的塗膜顯影,從 去不需要的部分(在正型的情況下,爲放射線的照射部 在負型的情況下’爲放射線的非照射部分),形成既定 案。以在顯影步驟中使用的顯影液而言,較佳爲鹼(鹼 合物)的水溶液。以鹼的例子而言,可以列舉氫氧化鈉 氧化鉀、碳酸鈉、矽酸鈉、偏矽酸鈉、氨水等無機驗 氧化四甲基銨、氫氧化四乙基銨等四級銨鹽等。 此外’在該鹼性水溶液中,也可以適量添加甲醇 醇等水溶性有機溶劑或界面活性劑使用。驗水溶液中 濃度從獲得適當顯影性的觀點來看,較佳可以爲〇 1屬 〜5質量%。作爲顯影方法’可以使用液池法、浸漬法 光。 圖案 以使 等。 的放 0AI 下的 6000 而除 分。 的圖 性化 、氫 :氫 、乙 的鹼 1量% 、搖 -36- 201131302 動浸漬法、噴淋法等適當的方法。顯影時間根據感放射線 性組成物的組成有所不同,較佳爲1 0〜1 8 0秒左右。在該 顯影處理後接著例如進行流水洗淨30〜90秒後,用例如壓 縮空氣或壓縮氮氣風乾,從而可以形成期望的圖案。 (4)加熱步驟 在上述步驟(4)中,使用加熱板、烘箱等加熱裝置,在 較高的溫度下加熱圖案化的薄膜,從而能促進上述[A]成分 的縮合反應,確實獲得硬化物。該步驟中的加熱溫度例如 爲1 20〜2 5 0 °C。加熱時間根據加熱器的種類有所不同,例 如,在加熱板上進行加熱步驟的情況下,可以爲5〜30分 鐘,在烘箱中進行加熱步驟的情況下,可以爲30〜90分 鐘。也可以使用進行兩次以上加熱步驟的分步烘焙法等。 由此,能在基板的表面上形成與目標硬化物對應的圖案狀 薄膜。 硬化膜(液晶顯示元件用之保護膜、層間絕緣膜或隔 片、半導體用之保護膜或層間絕緣膜 '或LED用透鏡材料 等) 由此形成的硬化膜透明性高且具有高的折射率。以由 本發明的組成物得到的硬化膜的折射率而言,根據各成分 的摻合比等有所不同,但具有1.5以上’進而爲1.6以上的 較高的値。 此外,由此形成圖案的硬化膜較佳用作液晶顯示元件 用之保護膜、層間絕緣膜或隔片、半導體用之保護膜或層 -37- 201131302 間絕緣膜、或LED用透鏡材料等。以這些硬化膜的膜厚而 言,較佳爲0_1〜8#m,更佳爲〇.1〜6"m,進一步更佳爲 0. 1〜4 # m。由本發明的感放射線性組成物形成的這些硬化 膜如下述實施例所示’具有透明性和黏附性,且具有高折 射率。 此外’本發明的感放射線性組成物並不限於上述形成 圖案的硬化膜的用途中,例如,可以用作半導體密封用材 料、半導體底層塡料用材料、電路基材用材料、平坦化材 料、電路基板保護用材料 '抗蝕劑用材料、抗鍍敷劑用材 料、或液晶密封用材料等。這些硬化膜藉由由本發明的感 放射線性組成物形成’從而能在短時間內獲得,此外,耐 熱性、黏附性和電絕緣性等優異。 實施例 以下藉由表示合成例、實施例,對本發明進行更具體 的說明,但本發明並不限定於以下的實施例。 由以下合成例獲得的水解縮合體的數量平均分子量 (Μη)和重量平均分子量(Mw)係藉由如下述的凝膠滲透色譜 (GPC)測定。 裝置:GPC- 101 (昭和電工股份有限公司製造) 管柱:將 GPC-KF — 801、GPC — KF — 802、GPC — KF —803和GPC— KF- 804(昭和電工股份有限公 司製造)結合者 移動相:四氫呋喃 -38- 201131302 [合成例1] 在具有攪拌器的容器內,加入144質量份丙二醇單甲 醚’接著加入13質量份甲基三甲氧基矽烷(MTMS)、5質量 份7 -縮水甘油氧基丙基三甲氧基矽烷(GPTMS)和6質量 份苯基三甲氧基矽烷(PTMS),加熱直至溶液溫度達到6〇 C。在ί谷液溫度達到6 0 C後’加入7質量份離子交換水, 加熱至75 °C ’保持3小時。接著加入25質量份原甲酸甲 酯作爲脫水劑,攪拌1小時。進一步使溶液溫度達到4 0。(:, 保持溫度並進行蒸發’從而除去水及由水解縮合生成的 醇。藉由以上步驟獲得矽氧烷聚合物(A - 1)。所得水解縮 合物的數量平均分子量(Μη)爲2500,分子量分佈(Mw/Mn) 爲2。 [合成例2] 在具有攪拌器的容器內,加入144質量份丙二醇單甲 醚,接著加入13質量份甲基三甲氧基砂院(MTMS)、11質 量份四甲氧基矽烷(T Μ 0 S )’加熱直至溶液溫度達到6 0 ΐ:。 在溶液溫度達到6 0 °C後,加入7質量份離子交換水,加熱 至7 5 °C ’保持3小時。接著加入2 5質量份原甲酸甲酯作 爲脫水劑’攪拌1小時。進一步使溶液溫度達到4 〇 t:,保 持溫度並進行蒸發,從而除去水及由水解縮合生成的醇。 藉由以上步驟獲得矽氧烷聚合物(A - 2)。所得水解縮合物 的數量平均分子量(Μη)爲2500’分子量分佈(Mw/Mn)爲2。 感放射線性組成物的製備 -39- 201131302 [實施例1] 將3質量份作爲[D]成分的分散劑之(D - 1)聚氧乙烯烷 基磷酸酯、90質量份作爲[E]成分的分散介質之甲乙酮混 合,一邊用均質機攪拌,一邊在約10分鐘內緩慢加入7質 量份作爲[B]成分的金屬氧化物顆粒的(B - 1)锆氧化物顆 粒(ZrCh顆粒)。在添加顆粒後攪拌約15分鐘。使用SC磨 機分散所得漿液,獲得分散液》 在作爲[A]成分的含有在合成例所得之矽氧烷聚合物 的溶液(相當於100質量份矽氧烷聚合物(固體成分)的量) 中,加入100質量份上述分散液,6質量份作爲[C]成分的 (C - 1)光酸產生劑,0.3質量份作爲[F]成分的矽類界面活 性劑 SH8400 FLUID(Toray dowcorning silicone 股份有限公 司製造),製備感放射線性組成物。 [實施例2〜1 8和比較例1〜4 ] 除了 [A]〜[F]成分的種類和量如表1和表2中所述以 外,與實施例1同樣地製備感放射線性組成物。另外,表 1和表2中的成分係如下所述。 (C— 1)光酸產生劑:1— (4 —正丁氧基萘—1—基)四氫 噻吩鑰三氟甲磺酸鹽 (C - 2)光鹼產生劑:2 -硝基苄基環己基胺基甲酸酯 (D— 1)聚氧乙烯烷基磷酸酯:在上述式(2)中’ P =約 9 ’ q =約1 3,X =約3的化合物 (D — 2)醯胺基胺鹽:在上述式(3)中’數量平均分子量 -40- 201131302 爲40000的高分子聚羧酸的醯胺基胺鹽(楠本化成股份有限 公司製造PLAAD ED21 1) (D- 3)乙二胺PO — EO縮合物:上述式(4)的乙二胺PO 一 EO縮合物(旭電化工業股份有限公司製造 ADEKA PLURONIC TR - 702) (D-4)聚氧乙烯烷基醚:在上述式(5)中,R4爲甲基, v =約200的化合物 (D— 5)聚氧乙烯烷基苯基醚:在上述式(6)中,R5爲甲 基,n =約200的化合物 (D— 6)烷基葡糖苷:在上述式(7)中,R6、R7、R8、R9 和Rl()爲正丁基的化合物 (D—7)聚氧乙烯脂肪酸酯:在上述式(8)中,R11爲乙 基,R12爲乙醯基,y =約200的化合物 (D—8)蔗糖脂肪酸酯:在上述式(9)中,R13〜R2°爲乙 基的化合物。 (D— 9)脫水山梨糖醇脂肪酸酯:在上述式(1〇)中,z = 約100的化合物 (D — 10)聚氧乙烯脫水山梨糖醇脂肪酸酯:在上述式 (11)中’ R22爲H,R23和R24是k =約100的基團的化合物 (D— 11)脂肪酸鏈烷醇醯胺:在上述式(12)中,R25爲己 基的化合物 物評價 使用如上製備的感放射線性組成物,如下評價作爲該 -41- 201131302 組成物、硬化膜的各種特性。將結果示於表1和表2。 [感放射線性組成物塗布性的評價] 在二氧化矽基板上,使用旋塗器塗布製備的組成物溶 液,然後在加熱板上,在100°C下預烘焙2分鐘,形成塗 膜,形成從矽基板上開始,膜厚爲4 // m的膜。 用鈉燈照射膜表面,以目視確認塗布膜面。將可清楚 確認條形不均勻、霧狀不均勻(雲狀的不均勻)的情況記爲 X,能稍微確認的情況記爲△,完全不能確認的情況記爲〇。 [感放射線性組成物的圖案形成性的評價] 對於上述得到的塗膜,使用Cannon股份有限公司製造 的PLA— 501F曝光機(超高壓水銀燈),經由具有6.0/zm的 線和空間比(1比1)的圖案的光罩,改變曝光時間進行曝 光,然後用2.38質量%的氫氧化四甲基銨水溶液,在25 °C 下,用液池法顯影80秒。然後,用超純水進行流水洗淨1 分鐘,使其乾燥,而在矽基板上形成圖案。在形成圖案後, 如果曝光部分形成圖案,則判斷爲負型,如果未曝光部分 形成圖案,則判斷爲正型。此外,將圖案非常清楚地形成 的情況評價圖案形成性爲◎,將清楚的情況評價爲〇’將 稍微不清楚的情況評價爲△,將清楚亮的情況評價爲X。另 外,在表中對於圖案不清楚亮的情況,無法評價是正型還 是負型時,以“”表示。 [硬化膜的光線透過率(透明性)的評價] 在上述“圖案形成性的評價”中,除了使用玻璃基板 -42 · 201131302 (“Corning 7059 ” Corning公司製造)代替矽基板以外,同 樣地進行’在玻璃基板上形成塗膜。然後,在清潔烘箱內, 在220 °C下加熱1小時,從而獲得硬化膜。使用分光光度 計“ 150 - 20型double beam”(日立製作所股份有限公司製 造)’以400〜8 OOnm的範圍之波長測定該形成了硬化膜的 玻璃基板的光線透過率。在最低光線透過率爲9 2 %以上 時,光線透過率能稱之爲良好。另外,在光線透過率的評 價中,由於不需要將所形成之膜形成圖案,因此將顯影步 驟省略,僅進行塗膜形成步驟、放射線照射步驟和加熱步 驟,用於評價。 [硬化膜折射率的評價] 使用阿貝折射計,測定藉由上述“硬化膜的光線透過 率(透明性)的評價”的方法所得到的硬化膜吞25°C下,在 6 3 3 n m光線中的折射率。 [硬化膜對ITO(銦錫氧化物)基板的黏附性的評價] 除了使用具有ITO的基板以外,與“光線透過率的評 價”同樣地形成硬化膜,進行壓力鍋試驗(1 20 °c ’濕度 100%,4 小時)。然後,根據 JIS K- 5400 - 1 990 的 8.5.3 附 著性棋盤格膠帶法求出1〇〇個棋盤格中殘留的棋盤格數 量,對保護膜的ITO黏附性進行評價。在1 〇〇個棋盤格中 殘留的棋盤格數量爲80個以下的情況下’ IT0的黏附性可 謂不佳。 -43- 201131302 7—I撇Optical Associates Inc. manufactured by measuring the intensity of radiation at a wavelength of 365 nm. It is preferably 1 00 to 1 0000 〗/m2, more preferably 500 to J/m2. (3) Developing step In the above step (3), 'by developing the exposed coating film from the unnecessary portion (in the case of a positive type, the irradiation portion of the radiation is in the negative type) The non-irradiated portion of the radiation) forms an established case. The developer used in the developing step is preferably an aqueous solution of a base (alkali). Examples of the base include quaternary ammonium salts such as sodium oxysulfate, sodium carbonate, sodium citrate, sodium metasilicate, and aqueous ammonia, such as tetramethylammonium oxide or tetraethylammonium hydroxide. Further, in the alkaline aqueous solution, a water-soluble organic solvent such as methanol or a surfactant may be added in an appropriate amount. The concentration in the aqueous solution is preferably from 属1 to 5% by mass from the viewpoint of obtaining appropriate developability. As the developing method, a liquid pool method or a dipping method can be used. Pattern to make etc. Put 6000 under 0AI and divide. The patterning, hydrogen: hydrogen, B, alkali 1%, shake -36-201131302 dynamic dipping method, spray method, etc. The development time varies depending on the composition of the radiation sensitive composition, and is preferably about 10 to 180 seconds. After the development treatment, for example, it is washed with running water for 30 to 90 seconds, and then air-dried with, for example, compressed air or compressed nitrogen gas, whereby a desired pattern can be formed. (4) Heating step In the above step (4), the patterned film is heated at a relatively high temperature by using a heating means such as a hot plate or an oven, thereby promoting the condensation reaction of the above [A] component and obtaining a cured product. . The heating temperature in this step is, for example, 1 20 to 2 50 °C. The heating time varies depending on the type of the heater. For example, in the case of performing the heating step on the hot plate, it may be 5 to 30 minutes, and in the case of performing the heating step in the oven, it may be 30 to 90 minutes. A stepwise baking method or the like which performs two or more heating steps may also be used. Thereby, a pattern-like film corresponding to the target cured product can be formed on the surface of the substrate. The cured film (protective film for liquid crystal display element, interlayer insulating film or spacer, protective film for semiconductor or interlayer insulating film) or lens material for LED, etc.) The cured film thus formed has high transparency and high refractive index. . The refractive index of the cured film obtained from the composition of the present invention differs depending on the blending ratio of each component, etc., but has a higher enthalpy of 1.5 or more and further 1.6 or more. Further, the cured film thus formed is preferably used as a protective film for an liquid crystal display element, an interlayer insulating film or a separator, a protective film for a semiconductor or a layer-37201131302 insulating film, or a lens material for an LED or the like. The thickness of the film of the cured film is preferably 0_1 to 8 #m, more preferably 〇1 to 6 " m, still more preferably 0. 1 to 4 # m. These cured films formed of the radiation sensitive composition of the present invention have transparency and adhesion as shown in the following examples, and have a high refractive index. Further, the radiation sensitive composition of the present invention is not limited to the use of the patterned cured film, and can be used, for example, as a semiconductor sealing material, a semiconductor underlayer material, a circuit substrate material, a planarization material, The material for protecting a circuit board is a material for a resist, a material for a plating resist, or a material for a liquid crystal sealing. These cured films can be obtained in a short time by the formation of the radiation-sensitive composition of the present invention, and are excellent in heat resistance, adhesion, electrical insulation, and the like. EXAMPLES Hereinafter, the present invention will be specifically described by showing Synthesis Examples and Examples, but the present invention is not limited to the following examples. The number average molecular weight (??) and the weight average molecular weight (Mw) of the hydrolysis condensate obtained by the following synthesis examples were determined by gel permeation chromatography (GPC) as described below. Device: GPC-101 (manufactured by Showa Denko Co., Ltd.) Pipe column: a combination of GPC-KF-801, GPC-KF-802, GPC-KF-803 and GPC-KF-804 (manufactured by Showa Denko Co., Ltd.) Mobile phase: tetrahydrofuran-38-201131302 [Synthesis Example 1] In a vessel having a stirrer, 144 parts by mass of propylene glycol monomethyl ether was added, followed by addition of 13 parts by mass of methyltrimethoxydecane (MTMS), 5 parts by mass of 7 - Glycidoxypropyltrimethoxydecane (GPTMS) and 6 parts by mass of phenyltrimethoxydecane (PTMS) were heated until the solution temperature reached 6 °C. After the temperature of the gluten solution reached 60 ° C, 7 parts by mass of ion-exchanged water was added and heated to 75 ° C for 3 hours. Next, 25 parts by mass of methyl orthoformate was added as a dehydrating agent, and the mixture was stirred for 1 hour. The solution temperature was further brought to 40. (:, maintaining the temperature and evaporating) to remove water and an alcohol formed by hydrolysis condensation. The oxirane polymer (A-1) is obtained by the above procedure. The number average molecular weight (??) of the obtained hydrolysis condensate is 2,500. The molecular weight distribution (Mw/Mn) was 2. [Synthesis Example 2] In a vessel having a stirrer, 144 parts by mass of propylene glycol monomethyl ether was added, followed by 13 parts by mass of methyltrimethoxy sand (MTMS), 11 mass. The tetramethoxy decane (T Μ 0 S )' is heated until the temperature of the solution reaches 60 ΐ: After the solution temperature reaches 60 ° C, 7 parts by mass of ion-exchanged water is added and heated to 75 ° C. Then, adding 25 parts by mass of methyl orthoformate as a dehydrating agent' was stirred for 1 hour. Further, the temperature of the solution was brought to 4 〇t:, and the temperature was maintained and evaporated to remove water and an alcohol formed by hydrolysis condensation. The step of obtaining a siloxane polymer (A-2). The obtained hydrolysis condensate has a number average molecular weight (?η) of 2500' and a molecular weight distribution (Mw/Mn) of 2. Preparation of a radiation sensitive composition -39-201131302 Example 1] 3 parts by mass (D-1) polyoxyethylene alkyl phosphate as a dispersing agent of the component [D], 90 parts by mass of methyl ethyl ketone as a dispersion medium of the [E] component, and stirred in a homogenizer for about 10 minutes. 7 parts by mass of (B-1) zirconium oxide particles (ZrCh particles) as metal oxide particles of the [B] component were added, and the mixture was stirred for about 15 minutes after the addition of the particles. The resulting slurry was dispersed using an SC mill to obtain a dispersion. In the solution containing the azoxyalkyl polymer obtained in the synthesis example (corresponding to 100 parts by mass of the siloxane polymer (solid content)) as the component [A], 100 parts by mass of the above dispersion is added, 6 mass A (C-1) photoacid generator as a component [C], and 0.3 parts by mass of a terpene surfactant SH8400 FLUID (manufactured by Toray Dow Corning Co., Ltd.) as a component [F] were prepared to prepare a radiation sensitive composition. [Examples 2 to 18 and Comparative Examples 1 to 4] The radiation sensitive composition was prepared in the same manner as in Example 1 except that the types and amounts of the components [A] to [F] were as described in Tables 1 and 2. In addition, the components in Tables 1 and 2 are as follows. C-1) Photoacid generator: 1-(4-n-butoxynaphthalene-1-yl)tetrahydrothiophene trifluoromethanesulfonate (C-2) photobase generator: 2-nitrobenzyl Cyclohexylcarbamate (D-1) polyoxyethylene alkyl phosphate: a compound (D-2) in the above formula (2) where 'P = about 9' q = about 1 3 and X = about 3 Amidoxime amine salt: a guanamine amine salt of a high molecular polycarboxylic acid having a number average molecular weight of -40 to 201131302 of the above formula (3) (PLAAD ED21 1 manufactured by Nanben Chemical Co., Ltd.) (D-3 Ethylenediamine PO - EO condensate: Ethylenediamine PO-EO condensate of the above formula (4) (ADEKA PLURONIC TR-702 manufactured by Asahi Kasei Kogyo Co., Ltd.) (D-4) Polyoxyethylene alkyl ether: In the above formula (5), the compound (D-5) polyoxyethylene alkylphenyl ether wherein R4 is a methyl group and v = about 200: in the above formula (6), R5 is a methyl group, and n = about 200. Compound (D-6) alkyl glucoside: in the above formula (7), R6, R7, R8, R9 and Rl() are n-butyl compound (D-7) polyoxyethylene fatty acid ester: In the above formula (8), R11 is an ethyl group, R12 is an ethylidene group, and y=about 200 Composition (D-8) Sucrose fatty acid ester: In the above formula (9), R13~R2 ° compound is ethyl. (D-9) sorbitan fatty acid ester: in the above formula (1), z = about 100 compound (D-10) polyoxyethylene sorbitan fatty acid ester: in the above formula (11) A compound (D-11) fatty acid alkanolamine in which R22 is H, R23 and R24 are groups having a k = about 100: in the above formula (12), a compound having R25 is a hexyl group is evaluated and used as described above. The radiation-sensitive linear composition was evaluated as various properties of the composition of the -41-201131302 and the cured film as follows. The results are shown in Tables 1 and 2. [Evaluation of coating property of radiation sensitive composition] The prepared composition solution was applied onto a ceria substrate by a spin coater, and then prebaked on a hot plate at 100 ° C for 2 minutes to form a coating film. A film having a film thickness of 4 // m from the substrate. The surface of the film was irradiated with a sodium lamp to visually confirm the surface of the coated film. The case where the strip shape is uneven, the mistiness is uneven (cloud unevenness) is clearly indicated as X, the case where it can be slightly confirmed is denoted by Δ, and the case where it is completely unrecognizable is denoted by 〇. [Evaluation of pattern formation property of the radiation-sensitive composition] For the coating film obtained above, a PLA-501F exposure machine (ultra-high pressure mercury lamp) manufactured by Cannon Co., Ltd. was used, and a line-to-space ratio of 6.0/zm was passed. The mask of the pattern of 1) was exposed to light by changing the exposure time, and then developed with a 2.38 mass% aqueous solution of tetramethylammonium hydroxide at 25 ° C for 80 seconds by a liquid pool method. Then, it was washed with ultrapure water for 1 minute, and dried to form a pattern on the crucible substrate. After the pattern is formed, if the exposed portion is patterned, it is judged to be negative, and if the unexposed portion is patterned, it is judged to be positive. Further, the case where the pattern was formed very clearly was evaluated as pattern formation ◎, and the case where it was clear was evaluated as 〇', and the case where it was slightly unclear was evaluated as Δ, and the case where it was clear and bright was evaluated as X. In addition, in the case where the pattern is unclear and bright, when it is not possible to evaluate whether it is a positive type or a negative type, it is represented by "". [Evaluation of Light Transmittance (Transparency) of the Cured Film] The above-mentioned "Evaluation of Pattern Formability" was carried out in the same manner as in the case of using a glass substrate - 42 · 201131302 ("Corning 7059" Corning Co., Ltd.) instead of the ruthenium substrate. 'Form a coating film on a glass substrate. Then, it was heated at 220 ° C for 1 hour in a cleaning oven to obtain a cured film. The light transmittance of the glass substrate on which the cured film was formed was measured by a spectrophotometer "150 - 20 type double beam" (manufactured by Hitachi, Ltd.) at a wavelength in the range of 400 to 800 nm. When the minimum light transmittance is above 92%, the light transmittance can be said to be good. Further, in the evaluation of the light transmittance, since it is not necessary to form the formed film, the development step is omitted, and only the coating film forming step, the radiation irradiation step, and the heating step are performed for evaluation. [Evaluation of refractive index of cured film] The cured film obtained by the method of "evaluation of light transmittance (transparency) of the cured film" by an Abbe refractometer was used at 25 ° C at 6 3 3 nm. The refractive index in the light. [Evaluation of adhesion of cured film to ITO (indium tin oxide) substrate] A cured film was formed in the same manner as in the "evaluation of light transmittance" except for using a substrate having ITO, and a pressure cooker test was performed (1 20 °c 'humidity). 100%, 4 hours). Then, the amount of the checkerboard remaining in one of the checkerboards was determined according to JIS K-5400-1 990's 8.5.3 attached checkerboard tape method, and the ITO adhesion of the protective film was evaluated. In the case where the number of remaining checkerboards in one of the checkerboards is 80 or less, the adhesion of IT0 is not good. -43- 201131302 7—I撇

實施例10 100.0 1 〇 1 1 ο νο 1 1 1 1 1 Ο rn 1 1 1 1 1 1 90.0 0.30 〇 ◎ 园 Ό On g 100/100 實施例9 100.0 1 〇 卜^ 1 1 1 Ο 'Ο 1 1 1 1 〇 rn 1 1 1 1 1 I 1 ! 90.0 0.30 〇 ◎ 1 v〇 Os s 100/100 00 100.0 1 P 1 1 1 5 1 1 1 ο rn 1 1 » 1 1 1 1 1 90.0 0.30 〇 ◎ 1 Ό 〇\ s 100/100 實施例7 100.0 t 〇 1 » 1 ο 1 1 〇 1 1 1 1 1 1 1 1 1 90.0 0.30 〇 ◎ © Η v〇 Os § 100/100 〇 m 辑 im 100.0 1 p 〆 1 1 1 I Ο ο ΓΛ t 1 1 1 1 1 1 1 1 1 90.0 0.30 〇 ◎ © Ό Os s 100/100 實施例5 100.0 1 1 1 ο Γ*^ 1 Ο 1 Ο … i 1 1 1 1 1 1 1 1 1 90.0 0.30 〇 © On 00 »〇 100/100 實施例4 100.0 1 1 14.0 1 1 ο ν〇 1 Ο 'Ο 1 1 1 1 1 • 1 1 1 r 180.0 0.30 〇 ◎ 爵 η: (N Os 1.73 100/100 m 闺 魏 100.0 1 1 ο 1 1 ο ν〇 1 ο rS 1 1 r 1 1 1 1 1 1 1 ! 90.0 0.30 〇 ◎ 苳 1.68 100/100 實施例2 100.0 1 14.0 1 1 1 Ο \ό 1 Ο 1 1 1 1 1 1 1 1 1 1 180.0 0.30 〇 ◎ yn 〇\ m vq 100/100 實施例1 100.0 1 ρ 卜: 1 1 1 ο νο 1 Ο rn 1 1 1 1 1 1 1 1 1 1 90.0 0.30 〇 © 爵 Os 1.60 100/100 _ 堪 <ίπ 嵌 SS 嫲 1 < <Π 嵌 嘁 is 1 < 曹 〇 了 1 Μ 醍 (Ν 〇 Ν /*—S ώ I Ο 了 靼 Μ i Μ 鼴 (Ν Ο Η cjT ώ /*-*Ν I Ο 了 i Μ 鷗 ο Ν Ρ ώ t ο 了 靼 1 <Ν 〇 (Λ S' V—✓ 蘅 廿1 糊 氍 ό s 蝴 邏 fS ΰ am )SH 氍 s m 遯 κ) m 嵌 1 Q (D-2)醯胺基胺鹽 (D-3)乙二胺PO —EO縮合物 〇>4)聚氧乙烯烷基醚 (D-5)聚氧乙烯烷基苯基醚 (D-6)烷基葡糖苷 (D-7)聚氧乙烯脂肪酸酯 am )Sn 氍 am αχ» m 雔 0? ά (D-9)脫水山梨糖醇脂肪酸酯 (D-10)聚氧乙烯脫水山梨糖醇脂肪酸酯 (D-11)脂肪酸烷醇醯胺 分散介質 界面活性劑 <硬化物的特性> 1塗布性 圖案形成性 丨光線透過率(%) 丨折射率(®633nm) 黏附性 g W -寸寸-Example 10 100.0 1 〇1 1 ο νο 1 1 1 1 1 Ο rn 1 1 1 1 1 1 90.0 0.30 〇 ◎ Ό On g 100/100 Example 9 100.0 1 ^ ^ ^ 1 1 1 Ο 'Ο 1 1 1 1 〇rn 1 1 1 1 1 I 1 ! 90.0 0.30 〇 ◎ 1 v〇Os s 100/100 00 100.0 1 P 1 1 1 5 1 1 1 ο rn 1 1 » 1 1 1 1 1 90.0 0.30 〇 ◎ 1 Ό 〇\s 100/100 Example 7 100.0 t 〇1 » 1 ο 1 1 〇1 1 1 1 1 1 1 1 1 90.0 0.30 〇◎ © Η v〇Os § 100/100 〇m Series im 100.0 1 p 〆 1 1 1 I Ο ο ΓΛ t 1 1 1 1 1 1 1 1 1 90.0 0.30 〇 ◎ © Ό Os s 100/100 Example 5 100.0 1 1 1 ο Γ*^ 1 Ο 1 Ο ... i 1 1 1 1 1 1 1 1 1 90.0 0.30 〇© On 00 »〇100/100 Example 4 100.0 1 1 14.0 1 1 ο ν〇1 Ο 'Ο 1 1 1 1 1 • 1 1 1 r 180.0 0.30 〇◎ 爵 η: (N Os 1.73 100/100 m 闺Wei 100.0 1 1 ο 1 1 ο ν〇1 ο rS 1 1 r 1 1 1 1 1 1 1 ! 90.0 0.30 〇◎ 苳1.68 100/100 Example 2 100.0 1 14.0 1 1 1 Ο \ό 1 Ο 1 1 1 1 1 1 1 1 1 1 180.0 0.30 〇 ◎ yn 〇 \ m vq 100/100 Example 1 100.0 1 ρ Bu: 1 1 1 ο νο 1 Ο rn 1 1 1 1 1 1 1 1 1 1 90.0 0.30 〇© 爵Os 1.60 100/100 _ 堪<ίπ 嵌 SS 嫲1 <<Π 嘁 嘁 is 1 < Cao 〇 1 Μ 醍 (Ν 〇Ν /*—S ώ I Ο Μ Μ 鼹 Ν Ν j j j j j j j j j j j j * * * 鸥 鸥 & & & & & & & & & & & & & & & & & & & & ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' '氍ό s 逻 f f ΰ am ) SH 氍sm 遁 κ) m embedded 1 Q (D-2) guanamine amine salt (D-3) ethylenediamine PO - EO condensate 〇 > 4) polyoxyethylene Alkyl ether (D-5) polyoxyethylene alkylphenyl ether (D-6) alkyl glucoside (D-7) polyoxyethylene fatty acid ester am )Sn 氍am αχ» m 雔0? ά (D -9) sorbitan fatty acid ester (D-10) polyoxyethylene sorbitan fatty acid ester (D-11) fatty acid alkanolamine dispersion medium surfactant <characteristic of cured product> 1 coating Pattern formation 丨 light transmittance (%) 丨 refractive index (® 633 nm) adhesion g W - inch inch -

5C )2 1 〇 1 1 1 ο VO 1 ο cn t I 1 1 • 1 1 1 1 1 90.0 0.30 X X 1 g 1.70 0/100 比較例3 100.0 1 1 1 1 ο Ο 1 Ο ΓΠ 1 1 1 t 1 1 1 1 I 1 90.0 0.30 〇 〇 副 •η Os 00 100/100 比較例2 100.0 1 p 1 ί 1 1 1 Ο rS 1 1 1 1 1 • 1 1 1 1 I 90.0 | 丨 0.30 〇 X t οο ο·ν 00 0/100 比較例1 100.0 1 I 1 1 1 ο 1 1 1 1 1 1 1 1 1 1 1 1 90.0 0.30 〇 C © 輕 00 On 1.48 100/100 實施例18 100.0 1 Ο 1 1 1 Ο 'Ο 1 1 1 1 1 1 1 1 1 1 1 1 90.0 Π 0.30 〈硬化物的特性〉 &lt; C δ ν〇 On $ 95/100 實施例17 1 100.0 ο 1 1 1 ο ν〇 1 Ο rn 1 1 1 l 1 1 t 1 1 1 90.0 0.30 〇 © v〇 Os 〇〇 100/100 實施例16 100.0 1 ρ 1 1 1 Ο 1 1 1 1 1 1 1 1 1 1 1 〇 cn 90.0 0.30 〇 ◎ 爵 VO On 1.60 100/100 實施例15 100.0 ! 1 ο ι&gt; 1 1 1 ο νο 1 1 1 1 1 1 1 1 1 1 〇 rS t 90.0 0.30 〇 ◎ © On 1.60 100/100 實施例14 100.0 1 ο 1 1 1 ο 1 1 1 1 1 1 1 1 1 〇 ro ( 1 1 90.0 0.30 〇 © © VO 〇\ 100/100 實施例13 100.0 1 ο 1 t 1 ο 1 1 1 1 1 1 1 1 〇 ΓΟ 1 1 1 90.0 0.30 〇 © v〇 On 1.60 100/100 實施例12 100.0 1 ρ 〆 1 1 1 ο νο 1 1 1 1 1 1 1 〇 cn 1 1 1 1 90.0 0.30 〇 © © Η Ό On s 100/100 實施例11 100.0 1 ο 1 1 1 ο ν〇 1 1 1 1 1 1 〇 cn 1 1 1 1 1 90.0 1 0.30 〇 © © Os 1.60 100/100 組成(質量份) 嵌 祕 /-&lt; &lt;Π 祕 &lt; /*—S 1 ο 了 1 I 齦 ίΝ 9 Ν ώ I ο 7 勘 i 顒 (Ν Ο Η &lt;Ν ώ ϊ ο 了 1 I 顒 ο a Ν ρ 1 /—S I ο 了 靼 1 I 鼴 fN ο £ 蘅 廿1 糊 氍 /·-V ΰ 蝴 盤 cT ΰ am sn 氍 落 稍 裝 Μ 祕 y—Ν Q (D-2)醯胺基胺鹽 (D-3)乙二胺Ρ0-Ε0縮合物 J (D-4)聚氧乙烯烷基醚 (D-5)聚氧乙烯烷基苯基醚 (D-6)烷基葡糖苷 (D-7)聚氧乙烯脂肪酸酯 (D-8)蔗糖脂肪酸酯 (D-9)脫水山梨糖醇脂肪酸酯 (D-10)聚氧乙烯脫水山梨糖醇脂肪酸酯 (D-11)脂肪酸烷醇醯胺 分散介質 界面活性劑 1塗布性 圖案形成性 芝 If m m 骧 曹 m ΓΛ v〇 @ if 志 黏附性 g W -ς寸- 201131302 如表1和表2的結果所示, 例1〜1 8的感放射線性組成物在 出正型的感放射線特性,此外’ 率和黏附性。尤其是含有非離子自 施例1〜1 7的組成物具有極高的 異。 產業上的可利用性 如上所述,本發明的感放射 性和圖案形成性,所得硬化物除 外’還具有高的折射率。因此, 物能用作液晶顯示元件用的保護 半導體用之保護膜或層間絕緣膜 外’本發明的感放射線性組成物 料 '半導體底層塡料用材料、電 料、電路基板保護用材料、抗飽 料、液晶密封用材料或發光二極 【圖式簡單說明】 ΑτΓ. 那0 【主要元件符號說明】 無。 含有[Α]〜[C]成分的實施 圖案形成性上優異,顯示 所得硬化膜具有高的折射 頁分散劑作爲[D]成分的實 圖案形成性,塗布性也優 線性組成物具有高的塗布 了高的透明性和黏附性以 本發明的感放射線性組成 膜、層間絕緣膜或隔片、 、LED用透鏡材料等。此 還能用作半導體密封用材 路基材用材料、平坦化材 劑用材料、抗鍍敷劑用材 體元件密封用材料等。 -46-5C ) 2 1 〇 1 1 1 ο VO 1 ο cn t I 1 1 • 1 1 1 1 1 90.0 0.30 XX 1 g 1.70 0/100 Comparative Example 3 100.0 1 1 1 1 ο Ο 1 Ο ΓΠ 1 1 1 t 1 1 1 1 I 1 90.0 0.30 〇〇 • η Os 00 100/100 Comparative Example 2 100.0 1 p 1 ί 1 1 1 Ο rS 1 1 1 1 1 • 1 1 1 1 I 90.0 | 丨0.30 〇X t οο ο · ν 00 0/100 Comparative Example 1 100.0 1 I 1 1 1 ο 1 1 1 1 1 1 1 1 1 1 1 1 90.0 0.30 〇C © Light 00 On 1.48 100/100 Example 18 100.0 1 Ο 1 1 1 Ο 'Ο 1 1 1 1 1 1 1 1 1 1 1 1 90.0 Π 0.30 <Characteristics of hardened matter> &lt; C δ ν〇On $ 95/100 Example 17 1 100.0 ο 1 1 1 ο ν〇1 Ο rn 1 1 1 l 1 1 t 1 1 1 90.0 0.30 〇© v〇Os 〇〇100/100 Example 16 100.0 1 ρ 1 1 1 Ο 1 1 1 1 1 1 1 1 1 1 1 〇cn 90.0 0.30 〇◎ 爵 VO On 1.60 100/100 Example 15 100.0 ! 1 ο ι&gt; 1 1 1 ο νο 1 1 1 1 1 1 1 1 1 1 〇rS t 90.0 0.30 〇 ◎ © On 1.60 100/100 Example 14 100.0 1 ο 1 1 1 ο 1 1 1 1 1 1 1 1 1 〇ro ( 1 1 90.0 0.30 〇© © VO 〇\ 100/100 Example 13 100.0 1 ο 1 t 1 ο 1 1 1 1 1 1 1 1 〇Γ Ο 1 1 1 90.0 0.30 〇© v〇On 1.60 100/100 Example 12 100.0 1 ρ 〆1 1 1 ο νο 1 1 1 1 1 1 1 〇cn 1 1 1 1 90.0 0.30 〇© © Η Ό On s 100 /100 Example 11 100.0 1 ο 1 1 1 ο ν〇1 1 1 1 1 1 〇cn 1 1 1 1 1 90.0 1 0.30 〇© © Os 1.60 100/100 Composition (parts by mass) Embedded /-&lt;&lt;Π秘&lt; /*-S 1 ο 1 I 龈ίΝ 9 Ν ώ I ο 7 i 颙 Η (Ν Η Η &lt;Ν ώ ϊ ο 1 I 颙ο a Ν ρ 1 /-SI ο 1 I 鼹fN ο £ 蘅廿1 氍 氍 /·-V ΰ 盘 c c t ΰ am sn 氍 稍 稍 秘 秘 秘 ( ( Q (D-2) 醯 基 amine (D-3) ethylene diamine Ρ0-Ε0 condensate J (D-4) polyoxyethylene alkyl ether (D-5) polyoxyethylene alkyl phenyl ether (D-6) alkyl glucoside (D-7) polyoxyethylene fatty acid ester (D-8) sucrose fatty acid ester (D-9) sorbitan fatty acid ester (D-10) polyoxyethylene sorbitan fatty acid ester (D-11) fatty acid alkanolamine dispersion medium interface activity Agent 1 coatability pattern formation Zhi If M 骧 m m m ΓΛ v〇@ if 志 adhesion g W - ς inch - 201131302 As shown in Table 1 and Table 2 results The radiation-sensitive linear compositions of Examples 1 to 18 are positive in the sense of radiation characteristics, in addition to the rate and adhesion. In particular, the compositions containing nonionics from Examples 1 to 17 have extremely high differences. Industrial Applicability As described above, the radiation sensitivity and pattern formability of the present invention have a high refractive index in addition to the obtained cured product. Therefore, the material can be used as a protective film for a semiconductor display element or an interlayer insulating film. 'The radiation-sensitive constituent material of the present invention' is a semiconductor underlayer material, a material, a circuit board protective material, and a fullness resistance. Material, liquid crystal sealing material or light-emitting diode [Simple description of the drawing] ΑτΓ. That 0 [Main component symbol description] None. The pattern containing the [Α] to [C] component is excellent in pattern formability, and the obtained cured film has a high refractive index dispersant as a solid pattern formability of the [D] component, and the coatability is also excellent. The linear composition has a high coating property. The high transparency and adhesion are the radiation sensitive composition film, the interlayer insulating film or the separator of the present invention, the lens material for LED, and the like. This can also be used as a material for a semiconductor substrate for sealing materials, a material for a flattening material, and a material for sealing a member for a plating resist. -46-

Claims (1)

201131302 七、申請專利範圍: 1 . 一種正型感放射線性組成物,其含有: [A] 矽氧烷聚合物、 [B] 金屬氧化物顆粒、和 [C] 感放射線性酸產生劑或感放射 上述[B ]金屬氧化物顆粒爲選自鋁、 錫、銻和姉所構成的群組中的至少一種 松。 2.如申請專利範圍第1項的正型感放射線 [A]矽氧烷聚合物是下式(1)表示的水解 水解縮合物, (R')n - Si - (OR2)4.n (1) 在式(1)中,R1各自獨立地爲氫或碳 解性有機基,R2各自獨立地爲氫、碳數 數1〜6的醯基或碳數爲6〜15的芳基,e 3 .如申請專利範圍第1項的正型感放射線 進一步含有[D]分散劑。 4.如申請專利範圍第3項的正型感放射線 線性鹼產生劑, 銷 '鈦、鋅、銦、 金屬的氧化物顆 性組成物,其中, 性矽烷化合物的 數1〜2 0的非水 1〜6的烷基、碳 i爲〇〜3的整數。 性組成物,其中, 性組成物,其中, 合物、聚氧伸乙 葡糖苷、聚氧伸 4糖醇脂肪酸酯.、 肪酸烷醇醯胺, [D]分散劑爲下式(2)、(3)或(4)表示的化 基烷基醚、聚氧伸乙基烷基苯醚、烷基 乙基脂肪酸酯、蔗糖脂肪酸酯、脫水山委 聚氧伸乙基脫水山梨糖醇脂肪酸酯或脂 -47- 201131302 式 在 2 中 R ο=ΓΟΗ 是 地 立 3RX 獨 J自 各 (2) (C Η 2 C Η 2 Ο ) p— C Η 2 C Η 2 Ο—,ρ 爲 8〜10 1〜3的整數,—(CH2CH2NCH2CH2NH)r—— C q Η 2 q + 1 — C Η 2 〇 — ’ q爲12〜16, x爲 CH2CH2NH—(jjCH2CH2CH2CH2CH2)s—Ο (3) 〇 CC-|〇H2〇CHC6H-|3 I OH 在式(3)中,r和s係選擇使藉由凝膠滲透層析求出的 聚苯乙烯換算數量平均分子量爲10000〜40000之數, H—(OH4C2)u—(〇H6C3)t (C3H6〇)t—(C2H40)u—Η —C2H4 (4) H—(OH4C2)u—(OH6C&lt; '(C3H60)t—(C2H40)u—H 在式(4)中,t和ii係選擇使藉由凝膠滲透層析求出的 聚苯乙烯換算數量平均分子量爲1000〜30000之數。 5 .如申請專利範圍第1〜4項中任一項所述的正型感放射線 性組成物,其用於形成硬化膜。 6. —種硬化膜的形成方法,其包括: (1) 在基板上形成申請專利範圍第5項之感放射線性 組成物之塗膜的步驟、 (2) 在步驟(1)中形成的塗膜的至少一部分中照射放 射線的步驟、 •48- 201131302 (3) 使在步驟(2)中照射了放射線的塗膜顯影的步 驟、和 (4) 加熱在步驟(3)中顯影的塗膜的步驟。 7. —種硬化膜,其係由申請專利範圍第5項的感放射線性 組成物形成。 -49- 201131302 四、指定代表圖: (一) 本案指定代表圖為:無。 (二) 本代表圖之元件符號簡單說明: te 。 j \ w 五、本案若有化學式時,請揭示最能顯示發明特徵的化學式:201131302 VII. Patent application scope: 1. A positive-type radiation-linear composition containing: [A] a siloxane polymer, [B] metal oxide particles, and [C] a radioactive acid generator or a sensation The above [B] metal oxide particles are irradiated with at least one kind of pine selected from the group consisting of aluminum, tin, antimony and bismuth. 2. The positive-type radiation of the first aspect of the patent application [A] siloxane polymer is a hydrolytic hydrolysis condensate represented by the following formula (1), (R')n - Si - (OR2) 4.n ( 1) In the formula (1), R1 is each independently hydrogen or a carbon-soluble organic group, and R2 is each independently hydrogen, a fluorenyl group having 1 to 6 carbon atoms or an aryl group having 6 to 15 carbon atoms, e 3. The positive-type radiation of claim 1 of the patent application further contains a [D] dispersant. 4. The positive-type radiation linear alkali generator according to item 3 of the patent application, the oxide composition of titanium, zinc, indium and metal, wherein the non-aqueous number of the decane compound is 1 to 2 0 The alkyl group of 1 to 6 and carbon i are integers of 〇~3. a composition, wherein, a composition, a compound, a polyoxyethylene derivative, a polyoxyalkylene fatty acid ester, a fatty acid alkanolamine, a [D] dispersant is the following formula (2) , (3) or (4) represented by alkyl alkyl ether, polyoxyethylidene ethyl phenyl ether, alkyl ethyl fatty acid ester, sucrose fatty acid ester, dehydrated mountain sulphate Sugar alcohol fatty acid ester or fat -47- 201131302 In the formula 2 R ο=ΓΟΗ is the ground 3RX alone J from each (2) (C Η 2 C Η 2 Ο ) p - C Η 2 C Η 2 Ο -, ρ An integer of 8 to 10 1 to 3, -(CH2CH2NCH2CH2NH)r - C q Η 2 q + 1 - C Η 2 〇 - 'q is 12~16, x is CH2CH2NH-(jjCH2CH2CH2CH2CH2)s-Ο (3) 〇CC-|〇H2〇CHC6H-|3 I OH In the formula (3), the r and s are selected such that the polystyrene-converted number average molecular weight determined by gel permeation chromatography is 10,000 to 40000. H—(OH4C2)u—(〇H6C3)t (C3H6〇)t—(C2H40)u—Η—C2H4 (4) H—(OH4C2)u—(OH6C&lt; '(C3H60)t—(C2H40)u— H In formula (4), t and ii are selected to be determined by gel permeation chromatography. The polystyrene-equivalent number average molecular weight is from 1000 to 30,000. The positive-type radiation-sensitive composition according to any one of claims 1 to 4, which is used for forming a cured film. A method for forming a cured film, comprising: (1) a step of forming a coating film of a radiation sensitive composition of claim 5 on a substrate, and (2) at least a coating film formed in the step (1) a step of irradiating a part of the radiation, • 48-201131302 (3) a step of developing a coating film irradiated with radiation in the step (2), and (4) a step of heating the coating film developed in the step (3). A kind of hardened film, which is formed by the radiation-sensitive linear composition of claim 5 of the patent application. -49- 201131302 IV. Designation of representative drawings: (1) The representative representative of the case is: No. (2) Representative figure A brief description of the component symbol: te j. w 5. If there is a chemical formula in this case, please reveal the chemical formula that best shows the characteristics of the invention:
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI678594B (en) * 2015-01-08 2019-12-01 日商Jsr股份有限公司 Radiation-sensitive composition and pattern forming method

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013182174A (en) * 2012-03-02 2013-09-12 Toyo Ink Sc Holdings Co Ltd Photosensitive resin composition
TWI567498B (en) * 2012-04-06 2017-01-21 Az電子材料盧森堡有限公司 Negative-type photosensitive siloxane composition
JP6323225B2 (en) * 2013-11-01 2018-05-16 セントラル硝子株式会社 Positive photosensitive resin composition, film production method using the same, and electronic component
KR102300782B1 (en) * 2014-01-24 2021-09-13 도레이 카부시키가이샤 Negative photosensitive resin composition, cured film obtained by curing same, method for producing cured film, optical device provided with cured film, and backside-illuminated cmos image sensor
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JP7275862B2 (en) * 2018-05-29 2023-05-18 東洋インキScホールディングス株式会社 Molding composition, molded article and laminate using the same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
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JPS63285538A (en) * 1987-05-18 1988-11-22 Nippon Telegr & Teleph Corp <Ntt> Pattern forming material and multi-layered wiring board formed by using said material
JP4061749B2 (en) * 1998-11-06 2008-03-19 Jsr株式会社 Circuit board and manufacturing method thereof
JP2003020335A (en) * 2001-05-01 2003-01-24 Jsr Corp Polysiloxane and radiation-sensitive resin composition
JP4332360B2 (en) * 2003-02-28 2009-09-16 大日本印刷株式会社 Wetting pattern forming coating liquid and pattern forming body manufacturing method
JP4217886B2 (en) * 2003-06-25 2009-02-04 Jsr株式会社 Radiation sensitive refractive index changing composition, pattern forming method and optical material
CN1886410A (en) * 2003-10-15 2006-12-27 Jsr株式会社 Silane compound, polysiloxane and radiation-sensitive resin composition
KR101221450B1 (en) * 2005-07-19 2013-01-11 주식회사 동진쎄미켐 Photosensitive resin composition comprising organic and inorganic compound
JP4765820B2 (en) * 2006-08-03 2011-09-07 東レ株式会社 Photosensitive paste and method of manufacturing electronic component using the same
JP2009237294A (en) * 2008-03-27 2009-10-15 The Inctec Inc Photosensitive resin composition for forming black matrix
JP5344843B2 (en) * 2008-03-31 2013-11-20 富士フイルム株式会社 Polymerizable composition and solid-state imaging device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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