CN103887230B - The method of plasma etching AlSi - Google Patents
The method of plasma etching AlSi Download PDFInfo
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- CN103887230B CN103887230B CN201410120499.XA CN201410120499A CN103887230B CN 103887230 B CN103887230 B CN 103887230B CN 201410120499 A CN201410120499 A CN 201410120499A CN 103887230 B CN103887230 B CN 103887230B
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- alsi
- silicon chip
- corrosion window
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- window region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
- H01L2221/1068—Formation and after-treatment of conductors
Abstract
A kind of method that the present invention relates to plasma etching AlSi.The method, on the basis of metal etch equipment etching AlSi, uses plasma etching equipment to run and goes the program of desilication slag and positive glue developing apparatus to run positive glue developing programs.White residue due to the removable residual of the program going desilication slag, positive glue developing programs removable polymer idea, therefore technical scheme can eliminate carve the normal fluctuation of AlSi technique due to film thickness, the normal fluctuation of AlSi thickness of metal film and dry method and cause in addition to the region of photoresist masking film, a large amount of white residues of other corrosion window regions residual and the problem of polymer idea, thus improve silicon chip surface quality microscopy qualification rate.Silicon chip surface quality microscopy qualification rate 0% brings up to during present technological fluctuation 100% when original technological fluctuation.
Description
Technical field
A kind of method that the present invention relates to plasma etching AlSi, it directly applies to the metal in the 3 following semiconductor technologies of μm
The manufacture field of interconnection line technique.
Background technology
At present, one of AlSi main thin-film material having become as semiconductor technology interconnection line.Described plasma etching AlSi work
Skill mainly uses AM8330 metal etch equipment, is passed through tetra-kinds of gases of Cl2, BCl3, CHF3, CF4, adds that bias is right
AlSi carries out reactive ion etching chemically and physically, reaches aluminum and goes the purpose of silicon.This process is mainly used in positivity light
Photoresist shelters the etching of the AlSi of film, because positive photoresist and AlSi are when etching, removes speed and the removal of photoresist
The ratio of the speed of AlSi can reach 3:1, the at once AlSi of 1 μm, will carve the glue of 0.3 μm, and positive photoresist thickness
It is general in 2 μm, so the AlSi that positive photoresist can shelter layer of staying well is not etched.But negative photoresist and AlSi
When etching, the ratio of the speed removing photoresist and the speed removing AlSi can only achieve 1:1, and the AlSi of 1 μm at once wants
Carve the glue of 1 μm, and negative photoresist thickness is typically below 1.2 μm, so negative photoresist is easy to etching when
It is consumed, exposes the AlSi of lower floor, cause the AlSi layer of lower floor's needs to be also etched.
At present, shelter the process of the AlSi of film, mainly Twi-lithography for plasma etching negative photoresist, with
Add the thickness of thick photoresist, improve the screening ability of photoresist.But whether glue still born by positive glue, as long as by one
AM8330 hardware etching AlSi, the method then removing photoresist, all can produce in addition to the region of photoresist masking,
The positive ordinary wave of AlSi technique is carved due to film thickness, the normal fluctuation of AlSi thickness of metal film and dry method in other corrosion window regions
The substantial amounts of white residue moved and cause and the problem of polymer idea remaining surface, have a strong impact on disk surfaces quality microscopy qualification rate.
Time worst, microscopy qualification rate is 0%.
Summary of the invention
The technical problem to be solved is to provide a kind of method of plasma etching AlSi, and it combines routine and goes desilication slag
Technique and the technique of conventional lithographic positive glue development, effectively eliminate outside the region of photoresist masking, a large amount of polymerization of other regions residual
Object point and the problem of white residue, thus disk surfaces quality microscopy qualification rate is greatly improved.
The present invention solves the technical scheme of above-mentioned technical problem and is, the step of the method for a kind of plasma etching AlSi of the present invention
Suddenly it is:
1) after completing the figure before metallization on silicon chip, described have metallization before figure silicon chip on sputtering one layer of AlSi
Thin film；
2) on the described silicon chip with AlSi thin film, by photoetching, formed AlSi corrosion window；
3) on the described silicon chip with AlSi corrosion window, by plasma etching, remove corrosion window region AlSi；
4) on the silicon chip of the AlSi in described removal corrosion window region, the white residue that corrosion window region remains is removed；
5) on the silicon chip of described removal corrosion window region residual white residue, the polymer idea that corrosion window region remains is removed；
6) on the silicon chip of the polymer idea of described removal corrosion window region residual, photoresist is removed.
Described have metallization before figure silicon chip on sputtering one layer of AlSi thin film step be:
1) on silicon chip, by ion implanting, spread, aoxidize, thin-film deposition, the conventional semiconductor metal of photoetching and etching
Technique before change, forms independent component i.e. transistor, diode, capacitor and resistor etc., and forms contact hole；
2) carry out acetone, EtOH Sonicate cleans；
3) physical vapor deposition process (PECVD) sputtered silicon aluminium lamination, thickness is the thickness needed for circuit, generally 0.7～4.0
μm。
On the silicon chip of the described AlSi of having thin film, by the step of photoetching, formation AlSi corrosion window it is:
With normal photolithographic process such as gluing, exposure, developments, remove unwanted photoresist, stay the photoresist of needs to cover
Cover film and form AlSi corrosion window.
On the described silicon chip with AlSi corrosion window, by plasma etching, the step of the AlSi removing corrosion window region
Suddenly it is:
1), in metal etch device A M8330, it is passed through Cl2、BCl3、CHF3、CF4Four kinds of gases, add bias,
The chemical reaction removal of Al utilizing reactive ion process simultaneously to complete corrosion window region is removed with the physical sputtering of Si；
2) after described dry method equipment takes out silicon chip, it is immediately placed in the baking oven of 200 DEG C between baking 10min to 15min.
On the silicon chip of the AlSi in described removal corrosion window region, the step of white residue of removing corrosion window region residual be:
The silicon chip that will take out from described baking oven, puts into and is connected with SF6And O2Another plasma etching equipment LAM490 in,
Desilication slag program is gone in operation, removes the white residue of corrosion window region residual.
On the silicon chip of described removal corrosion window region residual white residue, remove the step of polymer idea of corrosion window region residual
Suddenly it is:
The silicon chip of the white residue remained in described removal corrosion window region runs positive glue developing process program in conventional photoetching process,
Developer solution contains 2.5%TMAH, removes the polymer idea of corrosion window region residual.
Described removal corrosion window region residual polymer idea silicon chip on, remove photoresist step be:
According to the needs of technological design itself, photoresist may select positive glue, it is possible to selects negative glue；For different photoresists, go
Except the method for photoresist is respectively as follows: for negative photoresist, first remove photoresist by fuming nitric aicd wet method, then with containing O2Plasma,
The dry process of power 800W removes photoresist；For positive photoresist, with containing O2Plasma, the dry process of power 800W
Remove photoresist.
Beneficial effect:
Owing to present invention employs above-mentioned technical scheme, i.e. on the basis of AM8330 metal etch equipment etching AlSi, adopt
With LAM490 plasma etching equipment and positive glue developing apparatus, LAM490 equipment runs and goes the program of desilication slag and positive glue to show
Shadow equipment runs positive glue developing programs, removes photoresist the most again.Owing to going the program of desilication slag can remove the white residue of residual,
Positive glue developing programs can remove polymer idea, and therefore, technical scheme can eliminate due to film thickness, AlSi
The normal fluctuation of thickness of metal film and dry method carve the normal fluctuation of AlSi technique and cause in addition to the region of photoresist masking film,
A large amount of white residues of other corrosion window regions residual and the problem of polymer idea, thus it is qualified to improve silicon chip surface quality microscopy
Rate.Silicon chip surface quality microscopy qualification rate when original technological fluctuation 0% raising present technological fluctuation time 100%.
Accompanying drawing explanation
After Fig. 1 is the figure before the present invention completes metallization on silicon chip, sputtering on the silicon chip of figure before there is metallization again
The generalized section of one layer of AlSi thin film；
Fig. 2 is that Fig. 1 of the present invention is by photoetching, the generalized section of formation AlSi corrosion window；
Fig. 3 is that Fig. 2 of the present invention is by plasma etching, the generalized section of the AlSi removing corrosion window region；
Fig. 4 is the generalized section after Fig. 3 of the present invention removes the white residue of corrosion window region residual；
Fig. 5 is the generalized section after Fig. 4 of the present invention removes corrosion window region clustering object point；
Fig. 6 is the generalized section after Fig. 5 of the present invention removes photoresist；
Fig. 7 is the silicon chip surface plane graph (white residue and polymer idea exceed standard) that art methods processes；
Fig. 8 is the silicon chip surface plane graph (noresidue white residue and polymer idea) that the inventive method processes.
In Fig. 1-8,1 is silicon chip, and 2 is AlSi thin film, and 3 is the photoresist masking film stayed after photoetching process, and 4 is SF6With
O2Two kinds of gases, 5 is developer solution.
Detailed description of the invention
The detailed description of the invention of the present invention is not limited only to explained below.In conjunction with accompanying drawing, the present invention is further illustrated with.
The inventive method step is: combines routine and goes the technique of white residue and the technique of conventional lithographic positive glue development to provide one etc.
The method of plasma etching AlSi.
1. after the figure before completing metallization on silicon chip, again have metallization before figure silicon chip on sputtering one layer of AlSi
Thin film:
By ion implanting on silicon chip 1, diffusion, oxidation, thin-film deposition, before the metallization of the conventional semiconductor such as photoetching and etching
Technique, formed independent component and formed contact hole.Organic ultrasonic cleans (the ultrasonic 10min of acetone, EtOH Sonicate
10min)；Sputtering sial thin film 2 by physical vapor deposition process (PECVD), thickness is the thickness needed for circuit
(0.7um 4.0um), as shown in Figure 1.
2. on the described silicon chip with AlSi thin film, by photoetching, formed AlSi corrosion window:
First the AlSi surface needing positive photoresist photoetching is carried out 30min in 120 DEG C of baking ovens (with vacuum or drying nitrogen)
Baking, or the AlSi surface needing negative photoresist photoetching is carried out 30min in 160 DEG C of baking ovens (with vacuum or drying nitrogen)
Baking, then carry out the coating on AlSi surface with hexa methyl di silicon imide (HMDS), then gluing (film thickness according to
Depending on circuit step), carry out soft baking after gluing, the temperature of soft baking is 90 to 100 DEG C, the time: hot plate 30sec or described band is true
Sky or the baking oven 30min of drying nitrogen, soft baking post-exposure, develop (2.5%TMAH alkaline developer (Tetramethylammonium hydroxide)),
Post bake (hot plate 2min or described band vacuum or the baking oven 30min of drying nitrogen), sweeps counterdie (O2, power 400W) 3min,
Leave photoresist masking film 3, form AlSi corrosion window, as shown in Figure 2.
3. on the described silicon chip with AlSi corrosion window, by plasma etching, remove corrosion window region AlSi:
One dry etching equipment AM8330 is passed through Cl2,BCl3,CHF3,CF4Four kinds of gases complete to remove the natural oxygen of metal surface
(gas is BCl to change layer3, flow 100sccm；Cl2, flow 10sccm)；Main etching, is basically completed metal etch (gas
BCl3, flow 100sccm, protective side wall；Cl2, flow 30sccm, with the chemical reaction gas of aluminum)；Over etching (BCl3,
Flow 100sccm；Cl2, flow 15sccm), remove remained on surface aluminum；Passivation Treatment (CHF3,CF4, flow is 50sccm),
Removing the process containing main etching Al such as CL groups being adsorbed in silicon chip surface, the polymer of Si and chemical reaction generation is main
Carry out physical sputtering by bias 160V to remove；After AM8330 equipment takes out the silicon chip of the AlSi having carved corrosion window region
It is immediately placed in 200 DEG C of baking ovens between baking 10min to 15min, it is to avoid metal is met steam in atmosphere and corroded；Now shape
Become metal interconnection structure, as shown in Figure 3.
4. on the silicon chip of the AlSi in described removal corrosion window region, the white residue of removal corrosion window region residual:
The silicon chip taken out from described 200 DEG C of baking ovens is put into and is connected with SF6And O2Another dry etching equipment of two kinds of gases 4
Program of running in LAM490 removes desilication slag, SF6Flow 155sccm, O2Flow 47sccm, pressure 350mtorr, power 88w,
Parallel plate electrode spacing 2.0cm, etch period 33s, low to the etch rate of the backing material silicon dioxide under photoresist and white residue,
It is negligible, as shown in Figure 4.
5. on the silicon chip of described removal corrosion window region residual white residue, the polymer idea of removal corrosion window region residual:
The silicon chip of described removal corrosion window region residual white residue is run conventional photoetching positive glue developing process program (prewet, turn
Speed 500rpm, acceleration 10krpm/s, time 2s；Dry, rotating speed 3000rpm, acceleration 50krpm/s, time 3s；
Spray developer solution 5, rotating speed 500rpm, acceleration 10krpm/s, time 4s；Spray developer solution 5, rotating speed 1000rpm, acceleration
10krpm/s, time 3s；Spray developer solution 5, rotating speed 50rpm, acceleration 10krpm/s, time 2s；Static, time 65s；
Bath, rotating speed 500rpm, acceleration 10krpm/s, time 25s；Dry, rotating speed 5000rpm, acceleration 50krpm/s,
Time 25s), the polymer idea in the most removable photoresist masking film other regions outer, and to photoresist masking film and backing material
The etch rate of silicon dioxide is low, is negligible, as shown in Figure 5.
6. on the silicon chip of the polymer idea of described removal corrosion window region residual, removal photoresist:
Negative photoresist is first removed photoresist 10 ± 5min with fuming nitric aicd, then with containing O2Plasma (power 800w) dry method
Remove photoresist 40 ± 10min；For positive photoresist, directly with containing O2Plasma (power 800w) dry method remove photoresist 40 ± 10min,
As shown in Figure 6.
Process used in the inventive method, in addition to being described in detail, other, as cleaned, remove photoresist, sputtering,
Ion implanting, diffusion, oxidation, thin-film deposition, the process of photoetching and etching etc., equipment and chemical materials, reagent are
Technology generally in the art, no longer describes in detail.
Claims (5)
1. the method for a plasma etching AlSi, it is characterised in that: the method step is:
1) after completing the figure before metallization on silicon chip, described have metallization before figure silicon chip on sputtering one layer
AlSi thin film；
2) on the described silicon chip with AlSi thin film, by photoetching, by photoetching processes such as gluing, exposure, developments, remove
Unwanted photoresist, stays the photoresist of needs to shelter film and forms AlSi corrosion window；
3) on the described silicon chip with AlSi corrosion window, by plasma etching, the AlSi in corrosion window region is removed；
4) on the silicon chip of the AlSi in described removal corrosion window region, the white residue of corrosion window region residual is removed；
5) on the silicon chip of described removal corrosion window region residual white residue, the polymer idea of corrosion window region residual is removed；
6) on the silicon chip of the polymer idea of described removal corrosion window region residual, photoresist is removed, according to technological design
The needs of itself, photoresist may select positive glue, it is possible to selects negative glue；For different photoresists, the method removing photoresist is divided
It is not: for negative photoresist first to remove photoresist by fuming nitric aicd wet method, then with containing O2Plasma, the dry method that power is 800 watts
Technique is removed photoresist；For positive photoresist, with containing O2Plasma, the dry process that power is 800 watts removes photoresist.
The method of a kind of plasma etching AlSi the most according to claim 1, it is characterised in that: described have metal
The step sputtering one layer of AlSi thin film before changing on the silicon chip of figure is:
(1) on silicon chip, by ion implanting, spread, aoxidize, thin-film deposition, the conventional semiconductor metal of photoetching and etching
Technique before change, forms independent component；
(2) carry out acetone, EtOH Sonicate cleans；
(3) physical vapor deposition process (PECVD) sputtered silicon aluminium lamination, thickness be the thickness needed for circuit be 0.7～4.0 μm.
The method of a kind of plasma etching AlSi the most according to claim 1, it is characterised in that: described, there is AlSi
On the silicon chip of corrosion window, by plasma etching, the step of the AlSi removing corrosion window region is:
In (1) metal etch device A M8330, it is passed through Cl2、BCl3、CHF3、CF4Four kinds of gases, add bias,
The chemical reaction removal of Al utilizing reactive ion process simultaneously to complete corrosion window region is removed with the physical sputtering of Si；
(2) after described dry method equipment takes out silicon chip, it is immediately placed in the baking oven of 200 DEG C between baking 10min to 15min.
The method of a kind of plasma etching AlSi the most according to claim 1, it is characterised in that: remove corruption described
On the silicon chip of the AlSi of fenetre port area, the step of the white residue removing corrosion window region residual is:
The silicon chip that will take out from baking oven, puts into and is connected with SF6And O2Another plasma etching equipment LAM490 in, run
Go desilication slag program, remove the white residue of corrosion window region residual.
The method of a kind of plasma etching AlSi the most according to claim 1, it is characterised in that: remove corruption described
On the silicon chip of fenetre port area residual white residue, the step of the polymer idea removing corrosion window region residual is:
The silicon chip of the white residue remained in described removal corrosion window region runs positive glue developing process program in conventional photoetching process,
Developer solution contains 2.5%TMAH, removes the polymer idea of corrosion window region residual.
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| CN106206289A (en) * | 2015-05-07 | 2016-12-07 | 北大方正集团有限公司 | A kind of aluminum lithographic method and device |
| CN106283063A (en) * | 2015-05-18 | 2017-01-04 | 北大方正集团有限公司 | A kind of metal etching method and dry etching board |
| CN112320752A (en) * | 2019-08-05 | 2021-02-05 | 上海新微技术研发中心有限公司 | Preparation method of negative photoresist patterned film layer |
| CN110928142B (en) * | 2019-11-28 | 2023-08-29 | 北京遥测技术研究所 | Method for improving bonding force between photoresist and metal substrate |
| CN112875640A (en) * | 2021-01-26 | 2021-06-01 | 河源市众拓光电科技有限公司 | Preparation method of patterned Ag film |
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| CN1177203A (en) * | 1996-06-27 | 1998-03-25 | 现代电子产业株式会社 | Method for fabricating metal wire of semiconductor device |
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| TW200713460A (en) * | 2005-09-22 | 2007-04-01 | Adv Lcd Tech Dev Ct Co Ltd | Phase modulation device, phase modulation device fabrication method, crystallization apparatus, and crystallization method |
| CN102138202B (en) * | 2008-08-05 | 2015-11-25 | 三菱瓦斯化学株式会社 | Residue remover composition and use its washing methods of semiconductor element |
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| CN1177203A (en) * | 1996-06-27 | 1998-03-25 | 现代电子产业株式会社 | Method for fabricating metal wire of semiconductor device |
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